JP4899700B2 - モジュール - Google Patents
モジュール Download PDFInfo
- Publication number
- JP4899700B2 JP4899700B2 JP2006210708A JP2006210708A JP4899700B2 JP 4899700 B2 JP4899700 B2 JP 4899700B2 JP 2006210708 A JP2006210708 A JP 2006210708A JP 2006210708 A JP2006210708 A JP 2006210708A JP 4899700 B2 JP4899700 B2 JP 4899700B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- hole
- heat
- wiring
- heat conducting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
第1の実施形態では、電気伝導部が基板の表面側に設けられた例を説明する。
第2の実施形態では、基板の表面側に設けられた電気伝導部が挿入端子部及びスルーホールを介して基板の配線に接続された例を説明する。
第3の実施形態では、電気伝導部が基板の反対側の面に設けられた例を説明する。
上記各実施形態では、熱伝導部21,23,322,422の周囲全体からはみ出るような電気伝導部22,322,422が形成されているが、熱伝導部21,23,322,422の周囲から部分的にはみ出るように電気伝導部22,324,424が形成されていてもよい。
3,330,430 素子
11,302,402 表面
303,403 反対側の面
12,304,404 貫通孔
13,305,405,605 配線
21,23,322,422 熱伝導部
22,324,424 電気伝導部
211 表面
310,410,610 スルーホール
326,626 挿入端子部
408 裏面配線
424a 張出し部分
525 突部
526 半田層
Claims (4)
- 配線(13)が形成された表面(11)と貫通孔(12)とを有する基板(1)と、
前記貫通孔に埋設される熱伝導部(21;23)と、
前記基板の前記表面と同じ側にある前記熱伝導部の表面(211)の少なくとも一部を覆い、前記基板の前記表面側から前記配線に接続される電気伝導部(22)と、
前記電気伝導部上に載置され、前記電気伝導部側で電気的に接続される素子(3)と
を備える、モジュール。 - 前記素子(3)は前記熱伝導部(21;23)の直上に位置する、請求項1記載のモジュール。
- 前記熱伝導部(23)は、前記貫通孔(12)が前記基板(1)を貫通する方向に対する断面が、前記素子(3)から離れるに連れて拡がる、請求項1または請求項2記載のモジュール。
- 前記熱伝導部(21;23)と前記電気伝導部(22)とは同じ物質からなる、請求項1乃至請求項3のいずれか一つに記載のモジュール。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006210708A JP4899700B2 (ja) | 2005-08-18 | 2006-08-02 | モジュール |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005237515 | 2005-08-18 | ||
JP2005237515 | 2005-08-18 | ||
JP2006210708A JP4899700B2 (ja) | 2005-08-18 | 2006-08-02 | モジュール |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011246149A Division JP5445562B2 (ja) | 2005-08-18 | 2011-11-10 | モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007081379A JP2007081379A (ja) | 2007-03-29 |
JP4899700B2 true JP4899700B2 (ja) | 2012-03-21 |
Family
ID=37941302
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006210708A Active JP4899700B2 (ja) | 2005-08-18 | 2006-08-02 | モジュール |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4899700B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6546496B2 (ja) * | 2015-09-28 | 2019-07-17 | ニチコン株式会社 | 半導体パワーモジュール |
JP2017079268A (ja) * | 2015-10-20 | 2017-04-27 | 株式会社豊田自動織機 | 半導体装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5285352A (en) * | 1992-07-15 | 1994-02-08 | Motorola, Inc. | Pad array semiconductor device with thermal conductor and process for making the same |
JP3281220B2 (ja) * | 1994-12-14 | 2002-05-13 | 株式会社東芝 | 回路モジュールの冷却装置 |
JP3650689B2 (ja) * | 1997-05-28 | 2005-05-25 | 三菱電機株式会社 | 半導体装置 |
JP2003338577A (ja) * | 2002-05-21 | 2003-11-28 | Murata Mfg Co Ltd | 回路基板装置 |
JP3984552B2 (ja) * | 2003-01-06 | 2007-10-03 | 株式会社イースタン | 半導体装置用パッケージの製造方法 |
-
2006
- 2006-08-02 JP JP2006210708A patent/JP4899700B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2007081379A (ja) | 2007-03-29 |
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