JP4890558B2 - サファイア基板およびそれを用いる窒化物半導体発光素子ならびに窒化物半導体発光素子の製造方法 - Google Patents
サファイア基板およびそれを用いる窒化物半導体発光素子ならびに窒化物半導体発光素子の製造方法 Download PDFInfo
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- JP4890558B2 JP4890558B2 JP2008539886A JP2008539886A JP4890558B2 JP 4890558 B2 JP4890558 B2 JP 4890558B2 JP 2008539886 A JP2008539886 A JP 2008539886A JP 2008539886 A JP2008539886 A JP 2008539886A JP 4890558 B2 JP4890558 B2 JP 4890558B2
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- sapphire substrate
- nitride semiconductor
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- 239000000758 substrate Substances 0.000 title claims description 59
- 229910052594 sapphire Inorganic materials 0.000 title claims description 51
- 239000010980 sapphire Substances 0.000 title claims description 51
- 150000004767 nitrides Chemical class 0.000 title claims description 27
- 239000004065 semiconductor Substances 0.000 title claims description 25
- 238000000034 method Methods 0.000 title claims description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000013078 crystal Substances 0.000 claims description 45
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- 238000005520 cutting process Methods 0.000 claims description 13
- 238000000137 annealing Methods 0.000 claims description 9
- 239000012808 vapor phase Substances 0.000 claims description 5
- 238000005121 nitriding Methods 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims 1
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 230000005428 wave function Effects 0.000 description 4
- 238000004020 luminiscence type Methods 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 238000004729 solvothermal method Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910010093 LiAlO Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
- H01L21/02661—In-situ cleaning
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
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- H01L21/0242—Crystalline insulating materials
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
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- H01L21/02458—Nitrides
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
- Chemical Vapour Deposition (AREA)
- Semiconductor Lasers (AREA)
Description
方向、すなわちm面からa面に向う方向に対して、0.2〜10度、より好ましくは0.5〜4度、特に好ましくは2度程度だけ傾斜したオフ角面が作成されることである。すなわち、オフ角を制御したサファイア基板1を用いることである。
方向にオフ角をつけて切断することで、該サファイア基板1は、前記成長面3に、a面のステップ5と、m面のテラス6とを有する階段状のステップ基板となり、該a面のステップ5から、GaNをc軸成長させることができるからである。
方向を選んだ理由は、この向きのサファイアステップからのステップフロー(ステップに沿って結晶が成長する)が、m面(10−10)方向のGaNにとって好ましいと思えたためである。
方向に対して0.2〜10度、より好ましくは0.5〜4度、特に好ましくは2度程度だけ傾斜した面を作成する。したがって、該サファイア基板は、前記成長面にステップとテラスとを有する階段状のステップ基板となる。
面に限らず、[0001]面であってもよい。しかしながらm面から[0001]方向にオフ角をつけて切断した場合、図1のステップ5はc面となり、ステップ5面と直交する方向にGaNがa軸成長するためである。
Claims (5)
- 気相法でm面窒化物半導体結晶を成長させるためのサファイア基板において、
成長面として、m面から0.2〜10度傾斜したオフ角面を有し、
前記成長面は、サファイア原料のアルミニウムと酸素との内、アルミニウムリッチであり、
前記成長面が、アルミニウムリッチであることで、窒化していないことを特徴とするサファイア基板。 - 前記傾斜の角度は、前記
方向に対して0.5〜4度であることを特徴とする請求項1記載のサファイア基板。 - 前記請求項1又は2に記載のサファイア基板を用いることを特徴とする窒化物半導体発光素子。
- 気相法でm面窒化物半導体結晶を成長させるために、前記請求項1又は2に記載のサファイア基板を用い、そのサファイア基板上に窒化物半導体発光素子を結晶成長させる窒化物半導体発光素子の製造方法において、
前記結晶成長の工程の前に、成長面として前記サファイア基板のm面を用いるにあたって、前記m面から0.2〜10度傾斜した面を作成する切断工程を含み、
前記切断工程の後に、前記切断ダメージを軽減するアニール工程と、
前記アニールによって酸化した前記成長面をアルミニウムリッチとすることで、窒化を阻止する工程とをさらに含むことを特徴とする窒化物半導体発光素子の製造方法。 - 前記窒化を阻止する工程が、アニール工程後の傾斜した面に、トリメチルアルミニウムを流す工程である請求項4に記載の窒化物半導体発光素子の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008539886A JP4890558B2 (ja) | 2006-10-20 | 2007-10-19 | サファイア基板およびそれを用いる窒化物半導体発光素子ならびに窒化物半導体発光素子の製造方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006286096 | 2006-10-20 | ||
JP2006286096 | 2006-10-20 | ||
PCT/JP2007/070449 WO2008047907A1 (fr) | 2006-10-20 | 2007-10-19 | Substrat de saphir, élément luminescent à semi-conducteur nitrure utilisant le substrat de saphir, et procédé destiné à fabriquer l'élément luminescent à semi-conducteur nitrure |
JP2008539886A JP4890558B2 (ja) | 2006-10-20 | 2007-10-19 | サファイア基板およびそれを用いる窒化物半導体発光素子ならびに窒化物半導体発光素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JPWO2008047907A1 JPWO2008047907A1 (ja) | 2010-02-25 |
JP4890558B2 true JP4890558B2 (ja) | 2012-03-07 |
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JP2008539886A Active JP4890558B2 (ja) | 2006-10-20 | 2007-10-19 | サファイア基板およびそれを用いる窒化物半導体発光素子ならびに窒化物半導体発光素子の製造方法 |
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Country | Link |
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US (1) | US8390023B2 (ja) |
EP (1) | EP2090680A4 (ja) |
JP (1) | JP4890558B2 (ja) |
KR (1) | KR101172942B1 (ja) |
CN (1) | CN101528991B (ja) |
WO (1) | WO2008047907A1 (ja) |
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JP2002145700A (ja) * | 2000-08-14 | 2002-05-22 | Nippon Telegr & Teleph Corp <Ntt> | サファイア基板および半導体素子ならびに電子部品および結晶成長方法 |
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KR101172942B1 (ko) | 2012-08-14 |
CN101528991B (zh) | 2012-10-03 |
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