JP4878207B2 - Piezoelectric device - Google Patents

Piezoelectric device Download PDF

Info

Publication number
JP4878207B2
JP4878207B2 JP2006126884A JP2006126884A JP4878207B2 JP 4878207 B2 JP4878207 B2 JP 4878207B2 JP 2006126884 A JP2006126884 A JP 2006126884A JP 2006126884 A JP2006126884 A JP 2006126884A JP 4878207 B2 JP4878207 B2 JP 4878207B2
Authority
JP
Japan
Prior art keywords
gold
tin
plating layer
layer
container body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006126884A
Other languages
Japanese (ja)
Other versions
JP2007300406A (en
Inventor
利夫 中澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Crystal Device Corp
Original Assignee
Kyocera Crystal Device Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Crystal Device Corp filed Critical Kyocera Crystal Device Corp
Priority to JP2006126884A priority Critical patent/JP4878207B2/en
Publication of JP2007300406A publication Critical patent/JP2007300406A/en
Application granted granted Critical
Publication of JP4878207B2 publication Critical patent/JP4878207B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]

Landscapes

  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Description

本発明は圧電振動素子を内部に搭載してなる圧電デバイスに関する。       The present invention relates to a piezoelectric device in which a piezoelectric vibration element is mounted.

従来から、圧電振動素子の励振電極を外気から保護するため、圧電振動素子は気密封止されている。かかる従来の圧電デバイスとしては、蓋体は従来周知の金属加工法を採用し、４２アロイ等の金属を所定形状に成形することによって製作され、蓋体の下面には封止材が形成されている。また、圧電振動素子は導電性接着剤を用いて容器体の凹部に実装・固定した後、上述の蓋体を容器体開口部主面に接合することによって容器体が組み立てられる。
Conventionally, the piezoelectric vibration element is hermetically sealed in order to protect the excitation electrode of the piezoelectric vibration element from outside air. As such a conventional piezoelectric device, the lid is manufactured by forming a metal such as 42 alloy into a predetermined shape using a conventionally known metal processing method, and a sealing material is formed on the lower surface of the lid. Yes. The piezoelectric vibration element is mounted and fixed in the concave portion of the container body using a conductive adhesive, and then the container body is assembled by joining the lid body to the main surface of the container body opening.

上記以外の容器体と蓋体との接合方法としては、多種多様の接合方法が用いられ、例えばシーム溶接、半田接合、低融点ガラス接合、電子ビーム溶接、熱溶融接合等各種の接合方法がある。
As a joining method of the container body and the lid body other than the above, various joining methods are used. For example, there are various joining methods such as seam welding, solder joining, low melting point glass joining, electron beam welding, and hot melt joining. .

特開２００３−７８０５４号公報JP 2003-78054 A

なお、出願人は前記した先行技術文献情報で特定される先行技術文献以外には、本発明に関連する先行技術文献を本件出願時までに発見するに至らなかった。       In addition, the applicant did not find any prior art documents related to the present invention by the time of filing of the present application other than the prior art documents specified by the above prior art document information.

しかしながら、上述した従来の圧電デバイスは、金錫（Ａｕ−Ｓｎ）の封止材を溶融させて接合する構造であるが、金錫（Ａｕ−Ｓｎ）の封止材を溶融させる際に錫（Ｓｎ）が金表面に析出し溶融させて接合する際に、先述の錫（Ｓｎ）が圧電デバイスの内部で飛散して、飛沫が前記圧電振動素子に付着することによって発振周波数が変動し、安定した発振周波数を出力することが出来なくなるおそれがあるといった欠点があった。       However, the above-described conventional piezoelectric device has a structure in which a gold-tin (Au—Sn) sealing material is melted and bonded. However, when the gold-tin (Au—Sn) sealing material is melted, tin ( When Sn) precipitates on the gold surface and melts and joins, the above-mentioned tin (Sn) is scattered inside the piezoelectric device, and the droplets adhere to the piezoelectric vibration element, so that the oscillation frequency fluctuates and stabilizes. There is a drawback in that it may become impossible to output the oscillation frequency.

本発明は上記欠点に鑑み案出されたもので、従ってその目的は、封止材を溶融させる際に錫（Ｓｎ）が析出するのを防止し、安定した発振周波数を出力する圧電デバイスを提供することである。       The present invention has been devised in view of the above-described drawbacks. Accordingly, the object of the present invention is to provide a piezoelectric device that prevents the precipitation of tin (Sn) when the sealing material is melted and outputs a stable oscillation frequency. It is to be.

本発明の圧電デバイスは、容器体と当該容器体の開口部主面に形成された封止用導体パターンと、前記封止用導体パターンに対応した封止材が形成された蓋体とからなり、前記封止用導体パターンと封止材を熱溶融によって気密接合された圧電デバイスであって、前記蓋体の表面には、封止材である金錫メッキ層が、５μｍ以上かつ１０μｍ以下の厚みで形成されており、前記金錫メッキ層は、最外周の層が金メッキ層となるように、金メッキ層ならびに錫メッキ層が交互に積層されて構成されており、最外周の金メッキ層の厚みをｂとし、前記金錫メッキ層の厚みをｃとした場合に、０．５ｃ≦ｂ≦０．６５ｃの関係式が満たされていることを特徴とする。 The piezoelectric device of the present invention comprises a container body, a sealing conductor pattern formed on the opening main surface of the container body, and a lid body on which a sealing material corresponding to the sealing conductor pattern is formed. A piezoelectric device in which the sealing conductor pattern and a sealing material are hermetically bonded by heat melting, and a gold-tin plating layer as a sealing material is 5 μm or more and 10 μm or less on the surface of the lid body . the thickness is formed by the gold tin layer, as the outermost layer is gold plating layer, a gold plating layer and a tin plating layer is constituted by alternately stacking, the thickness of the outermost gold layer Where b is the thickness of the gold-tin plating layer and c is the thickness of the gold-tin plating layer, the relational expression 0.5c ≦ b ≦ 0.65c is satisfied .

本発明の圧電デバイスによれば、前記蓋体の表面には、封止材である金錫メッキ層が、５μｍ以上かつ１０μｍ以下の厚みで形成されており、前記金錫メッキ層は最外周の層が金メッキ層となるように、金メッキ層ならびに錫メッキ層が交互に積層され構成されており、この最外周の金メッキ層の厚みをｂとし、前記金錫メッキ層の厚みをｃとする場合に、０．５ｃ≦ｂ≦０．６５ｃの関係式が満たされるとき、溶融した前記金錫メッキ層が溶融しても錫が金の表面に析出することが無いので、溶融の際に錫が圧電デバイス内部で飛散して、錫の飛沫が前記圧電振動素子に被着することが無く、その結果、安定した発振周波数を出力することが可能となる。又、金錫メッキ層が前記蓋体に這い上がることが無く安定して気密封止することが可能となる。   According to the piezoelectric device of the present invention, a gold-tin plating layer as a sealing material is formed on the surface of the lid with a thickness of 5 μm or more and 10 μm or less, and the gold-tin plating layer is formed on the outermost periphery. When the gold plating layer and the tin plating layer are alternately laminated so that the layer becomes a gold plating layer, the thickness of the outermost gold plating layer is b and the thickness of the gold tin plating layer is c When the relational expression 0.5c ≦ b ≦ 0.65c is satisfied, tin does not precipitate on the gold surface even when the molten gold-tin plating layer is melted. There is no scattering of tin inside the device and the tin droplets are not deposited on the piezoelectric vibration element. As a result, a stable oscillation frequency can be output. In addition, the gold-tin plating layer does not crawl up on the lid body, and it becomes possible to stably hermetically seal.

以下、本発明を添付図面に基づいて詳細に説明する。
図１は本発明の一実施形態に係る水晶振動子を斜めうえからみた概略の分解斜視図であり、また図２は図１の水晶振動子の側面方向からみた概略の断面図であり、これらの図に示される水晶振動子は、内部に水晶振動素子５が収容された矩形状の容器体１を、蓋体２によって気密封止される構造である。 Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a schematic exploded perspective view of a crystal resonator according to an embodiment of the present invention as viewed obliquely, and FIG. 2 is a schematic cross-sectional view of the crystal resonator of FIG. The crystal resonator shown in the figure has a structure in which a rectangular container body 1 in which a crystal resonator element 5 is accommodated is hermetically sealed by a lid body 2.

前記容器体１は、例えば、ガラス−セラミック、アルミナセラミックス等のセラミック材料から成る容器体１と、４２アロイやコバール，リン青銅等の金属から成る蓋体２とから成り、前記容器体の開口面にタングステン（Ｗ）または、モリブデン（Ｍｏ）等から成るメタライズ層を形成し、前記メタライズ層の上面には、ニッケル（Ｎｉ）層を形成し、前記ニッケル（Ｎｉ）層の上面には、金（Ａｕ）層が形成されている。その上面に蓋体２を載置・固定させることによって容器体１が構成され、容器体１の内側に水晶振動素子５が実装される。       The container body 1 is composed of, for example, a container body 1 made of a ceramic material such as glass-ceramic or alumina ceramic, and a lid body 2 made of a metal such as 42 alloy, Kovar, or phosphor bronze, and the opening surface of the container body A metallized layer made of tungsten (W) or molybdenum (Mo) is formed on the upper surface of the metallized layer, a nickel (Ni) layer is formed on the upper surface of the metalized layer, and a gold (Ni) layer is formed on the upper surface of the nickel (Ni) layer. Au) layer is formed. The container body 1 is configured by placing and fixing the lid body 2 on the upper surface thereof, and the crystal resonator element 5 is mounted inside the container body 1.

前記容器体１は、その内部に、具体的には基板の上面と側壁の内面と蓋体２の下面とで囲まれる空間内に水晶振動素子５を収容して気密封止するものであり、前記容器体１の上面には水晶振動素子５の励振電極に接続される一対の搭載パッド等が、また、容器体１の下面には入力端子及び出力端子、グランド端子等の外部端子７が形成されている。これらの端子等は基板表面の配線導体や基板内部に埋設されているビアホール導体等を介して対応する端子といったもの同士、交互に電気的に接続されている。       The container body 1 accommodates a quartz crystal resonator element 5 in an interior thereof, specifically, a space surrounded by the upper surface of the substrate, the inner surfaces of the side walls, and the lower surface of the lid body 2, and hermetically seals the container body 1, A pair of mounting pads connected to the excitation electrode of the crystal resonator element 5 is formed on the upper surface of the container body 1, and external terminals 7 such as an input terminal, an output terminal, and a ground terminal are formed on the lower surface of the container body 1. Has been. These terminals and the like are alternately electrically connected to each other such as corresponding terminals via wiring conductors on the surface of the substrate or via-hole conductors embedded in the substrate.

なお、前記容器体１は、ガラス−セラミック等のセラミック材料から成る場合、例えば、セラミック材料粉末に適当な有機溶剤等を添加・混合して得たセラミックグリーンシートの表面等に配線導体となる導体ペーストを従来周知のスクリーン印刷等によって塗布するとともに、これを複数枚積層してプレス成形した後、高温で焼成することによって製作される。       In addition, when the said container body 1 consists of ceramic materials, such as glass-ceramics, for example, the conductor used as a wiring conductor on the surface etc. of the ceramic green sheet obtained by adding and mixing a suitable organic solvent etc. to ceramic material powder The paste is applied by well-known screen printing or the like, and a plurality of the pastes are laminated, press-molded, and then fired at a high temperature.

前記容器体１の開口面には、タングステン（Ｗ）または、モリブデン（Ｍｏ）等から成るメタライズ層を形成し、その厚みは、１０μｍ〜２０μｍであり、前記メタライズ層の上面にニッケル（Ｎｉ）層を形成し、その厚みは、８μｍ〜２０μｍである。また、前記ニッケル（Ｎｉ）層の上面には、金（Ａｕ）層が形成されており、その厚みは０．３μｍ〜１．０μｍ程度が最も用いられ、その理由は０．２μｍ以下では薄く金（Ａｕ）層が脆弱となり、また１．０μｍよりも厚ければ、結果的に製品の低背化を妨げることに成る為であった。       A metallized layer made of tungsten (W), molybdenum (Mo) or the like is formed on the opening surface of the container body 1 and has a thickness of 10 μm to 20 μm. A nickel (Ni) layer is formed on the upper surface of the metallized layer. The thickness is 8 μm to 20 μm. In addition, a gold (Au) layer is formed on the upper surface of the nickel (Ni) layer, and the thickness is most preferably about 0.3 μm to 1.0 μm because the thickness is less than 0.2 μm. This is because if the (Au) layer becomes fragile and is thicker than 1.0 μm, the resulting reduction in the height of the product will be hindered.

また蓋体２は従来周知の金属加工法を採用し、４２アロイ等の金属を所定形状に成形することによって製作され、前記蓋体２の上面には、金（Ａｕ）層が形成され、更にニッケル（Ａｕ）層の上面に、金錫（Ａｕ−Ｓｎ）メッキ層４が形成される。前記金錫（Ａｕ−Ｓｎ）メッキ層４は、図３に示されるように、金（Ａｕ）メッキ層、及び錫（Ｓｎ）メッキ層を複数層形成して構成され、錫（Ｓｎ）メッキ層の厚みをａとし、最外周の金（Ａｕ）メッキ層の厚みをｂとする場合に、図４に示されるように、前記のメッキ層の厚みの関係がｂ＞ａの場合、組み立てられた圧電デバイスの発振周波数の不良率が最も低い。前記のメッキ層の厚みの関係がｂ＞ａの場合、金錫（Ａｕ−Ｓｎ）メッキ層４が溶融する際、錫（Ｓｎ）メッキ層から錫（Ｓｎ）が最外周の金（Ａｕ）メッキ層に析出することが無く、その結果、溶解時に最外周の金（Ａｕ）メッキ層から析出した錫（Ｓｎ）の容器体内への飛散、及びその飛沫が前記水晶振動素子５に錫（Ｓｎ）が被着することが無く安定した発振周波数を出力することが可能となり、圧電デバイスの発振周波数の不良率が最も低くなる。なお、図４の不良率を測定する際の固体数をＮとした場合、Ｎ＝１００であった。ここで、水晶振動素子５の表面に異物が付着した場合、水晶振動素子５の振動が抑制され、安定した発振周波数が出力されないおそれがあることは言うまでも無い。       The lid 2 is manufactured by adopting a conventionally known metal processing method and molding a metal such as 42 alloy into a predetermined shape, and a gold (Au) layer is formed on the upper surface of the lid 2. A gold tin (Au—Sn) plating layer 4 is formed on the upper surface of the nickel (Au) layer. As shown in FIG. 3, the gold tin (Au—Sn) plating layer 4 is formed by forming a plurality of gold (Au) plating layers and tin (Sn) plating layers, and a tin (Sn) plating layer. When the thickness of the outermost gold (Au) plating layer is b, and the thickness of the outermost gold (Au) plating layer is b, as shown in FIG. The failure rate of the oscillation frequency of the piezoelectric device is the lowest. When the relation of the thickness of the plating layer is b> a, when the gold tin (Au—Sn) plating layer 4 is melted, tin (Sn) is plated from the tin (Sn) plating layer to the outermost gold (Au) plating. As a result, the tin (Sn) deposited from the outermost gold (Au) plating layer at the time of melting is scattered into the container body, and the splash is generated in the crystal resonator element 5 by the tin (Sn). It is possible to output a stable oscillation frequency without being deposited, and the defect rate of the oscillation frequency of the piezoelectric device is the lowest. In addition, when the number of solids when measuring the defect rate in FIG. 4 is N, N = 100. Here, when a foreign substance adheres to the surface of the crystal resonator element 5, it goes without saying that vibration of the crystal resonator element 5 is suppressed and a stable oscillation frequency may not be output.

また、前記最外周の金（Ａｕ）メッキ層の厚みをｂとし、前記金錫（Ａｕ−Ｓｎ）メッキ層４の厚みをｃとする場合に図５に示されるように、前記メッキ層の厚みの関係が０．５ｃ≦ｂ≦０．６５ｃの場合、組み立てた圧電デバイスの発振周波数の不良率が最も低い。前記メッキ層の厚みの関係が、０．５ｃ≦ｂ≦０．６５ｃの場合、金錫（Ａｕ−Ｓｎ）メッキ４が溶融する際、錫（Ｓｎ）メッキ層から錫（Ｓｎ）が最外周の金（Ａｕ）メッキ層に析出することが無く、その結果、溶解時に最外周の金（Ａｕ）メッキ層から析出した錫（Ｓｎ）の容器体内への飛散、及びその飛沫が前記水晶振動素子５に錫（Ｓｎ）が被着することが無く安定した発振周波数を出力することが可能となり、圧電デバイスの発振周波数の不良率が最も低くなる。なお、図５の不良率を測定する際の固体数をＮとした場合、Ｎ＝１００であった。       Further, when the thickness of the outermost gold (Au) plating layer is b and the thickness of the gold tin (Au—Sn) plating layer 4 is c, the thickness of the plating layer is shown in FIG. Is 0.5c ≦ b ≦ 0.65c, the defect rate of the oscillation frequency of the assembled piezoelectric device is the lowest. When the relation of the thickness of the plating layer is 0.5c ≦ b ≦ 0.65c, when the gold tin (Au—Sn) plating 4 is melted, tin (Sn) is the outermost periphery from the tin (Sn) plating layer. As a result, there is no precipitation on the gold (Au) plating layer, and as a result, the dispersion of the tin (Sn) deposited from the outermost gold (Au) plating layer into the container body at the time of melting, and the splash thereof are the crystal resonator element 5. Thus, it is possible to output a stable oscillation frequency without depositing tin (Sn) on the substrate, and the defect rate of the oscillation frequency of the piezoelectric device is the lowest. In addition, when the number of solids when measuring the defect rate in FIG.

また、前記金錫（Ａｕ−Ｓｎ）メッキ層４の厚みが５μｍ以上、かつ１０μｍ以下とされることにより、前記容器体に前記蓋体に接合した際に、溶融した前記金錫メッキ層が容器体内に飛散し、その飛沫が前記水晶振動素子に被着して発振周波数が変動することが防止され、かつ前記金錫メッキ層が前記蓋体に這い上がることがない為、安定して気密封止することが可能となる。       Moreover, when the thickness of the gold-tin (Au—Sn) plating layer 4 is 5 μm or more and 10 μm or less, the molten gold-tin plating layer is attached to the container body when bonded to the lid body. It is scattered in the body, and the droplets are prevented from fluctuating the oscillation frequency by adhering to the quartz crystal vibration element, and the gold-tin plating layer does not crawl up on the lid, so that the air-tightness can be stably sealed. It is possible to stop.

水晶振動素子５を、導電性接着剤６を用いて容器体１の内部に実装・固定した後、上述の蓋体２を従来周知の熱圧着法によって第２の金属層の上面に接合することによって容器体１が組み立てられる。このように、金錫（Ａｕ−Ｓｎ）メッキ層は、メタライズ層の凹凸を緩和し、気密性の低下を防ぐことができると共に気密性の精度を向上させることが可能となる。       After the crystal resonator element 5 is mounted and fixed inside the container body 1 using the conductive adhesive 6, the above-described lid body 2 is bonded to the upper surface of the second metal layer by a conventionally known thermocompression bonding method. As a result, the container body 1 is assembled. As described above, the gold-tin (Au—Sn) plating layer can alleviate the unevenness of the metallized layer, prevent a decrease in hermeticity, and improve the accuracy of hermeticity.

一方、前記容器体１の内部に収容される水晶振動素子５は、所定の結晶軸でカットした水晶片の両主面に一対の励振電極を被着・形成してなり、外部からの変動電圧が一対の励振電極を介して水晶片に印加されると、所定の周波数で厚みすべり振動を起こす。前記水晶振動素子５は、先述の一対の励振電極を導電性接着剤６を介し、基板上面の対応する搭載パッドに電気的に接続されることによって基板の上面に搭載され、これによって水晶振動素子５と容器体１との電気的接続、及び機械的接続が同時になされる。       On the other hand, the quartz crystal vibrating element 5 accommodated in the container body 1 is formed by attaching and forming a pair of excitation electrodes on both main surfaces of a crystal piece cut along a predetermined crystal axis, and a variable voltage from the outside. Is applied to the quartz crystal piece through a pair of excitation electrodes, thickness shear vibration occurs at a predetermined frequency. The crystal resonator element 5 is mounted on the upper surface of the substrate by electrically connecting the pair of excitation electrodes described above to the corresponding mounting pads on the upper surface of the substrate via the conductive adhesive 6, thereby the crystal resonator element. 5 and the container body 1 are electrically connected and mechanically connected at the same time.

ここで容器体１の蓋体２を、容器体１の配線導体を介して容器体下面に配されるグランド端子用の外部端子７に接続させておけば、その使用時、蓋体２がアースされることによりシールド機能が付与され、水晶振動素子５を外部からの不要な電気的作用より良好に保護することができる。従って、容器体１の蓋体２は容器体１の配線導体を介してグランド端子用の外部端子７に接続させておくことが好ましい。       Here, if the lid body 2 of the container body 1 is connected to the external terminal 7 for the ground terminal disposed on the lower surface of the container body via the wiring conductor of the container body 1, the lid body 2 is grounded when used. As a result, a shielding function is provided, and the quartz resonator element 5 can be better protected than an unnecessary electrical action from the outside. Therefore, the lid 2 of the container body 1 is preferably connected to the external terminal 7 for the ground terminal via the wiring conductor of the container body 1.

また、上記容器体内に集積回路素子を搭載することによって発振器とすることができる。前記集積回路素子としては、例えば、容器体の電極パッドと１対１に対応する複数個の接続パッドを有した矩形状のフリップチップ型ＩＣ等が用いられ、その集積回路素子内では、水晶振動素子５に基き、発振出力を生成する発振回路等が設けられ、この発振回路で生成された発振出力は、外部に出力された後、例えば、クロック信号等の基準信号として利用されることとなる。       An oscillator can be obtained by mounting an integrated circuit element in the container. As the integrated circuit element, for example, a rectangular flip chip type IC having a plurality of connection pads corresponding to the electrode pads of the container body is used. Based on the element 5, an oscillation circuit or the like for generating an oscillation output is provided. The oscillation output generated by the oscillation circuit is output to the outside and then used as a reference signal such as a clock signal, for example. .

なお、本発明は上述の実施形態に限定されるものではなく、本発明の要旨を逸脱しない範囲において種々の変更、改良等が可能である。例えば、上述した実施形態においては、個片の容器体を使用していたが、多数個取り基板を使用しても全く構わず、さらに生産性を向上出来る利点がある。例えば、上述の実施形態においては圧電振動素子として水晶振動素子を用いるが、これに代えて、圧電振動素子としてＳＡＷフィルタ等の他の圧電振動素子を用いる場合であっても本発明は適用が可能である。       In addition, this invention is not limited to the above-mentioned embodiment, A various change, improvement, etc. are possible in the range which does not deviate from the summary of this invention. For example, in the above-described embodiment, individual container bodies are used, but a multi-piece substrate may be used at all, and there is an advantage that productivity can be improved. For example, in the above-described embodiment, a crystal vibration element is used as the piezoelectric vibration element, but the present invention can be applied even when another piezoelectric vibration element such as a SAW filter is used as the piezoelectric vibration element instead. It is.

本発明の一実施形態に係る水晶振動子を斜め上方からみた概略の分解斜視図である。1 is a schematic exploded perspective view of a crystal resonator according to an embodiment of the present invention viewed obliquely from above. 図１の水晶振動子を側面方向からみた概略の断面図である。FIG. 2 is a schematic cross-sectional view of the crystal unit of FIG. 1 viewed from a side surface direction. 図２の水晶振動子で用いている蓋体の側面方向からみた概略の断面図の拡大図である。FIG. 3 is an enlarged view of a schematic cross-sectional view seen from a side surface direction of a lid used in the crystal unit of FIG. 2. 錫（Ｓｎ）メッキ層の厚みをａとし、最外周の金（Ａｕ）メッキ層の厚みをｂとした場合、、bそれぞれのメッキ層の厚みの組み合わせと、組み立てた圧電デバイスの発振周波数の不良率を示す表である。When the thickness of the tin (Sn) plating layer is a and the thickness of the outermost gold (Au) plating layer is b, the combination of the thicknesses of the respective plating layers and the oscillation frequency of the assembled piezoelectric device are defective. It is a table | surface which shows a rate. 最外周の金（Ａｕ）メッキ層の厚みをｂとし、金錫（Ａｕ−Ｓｎ）メッキ層４の厚みをｃとする場合、メッキ層の厚みの関係ｂ／ｃ値と、組み立てた圧電デバイスの発振周波数の不良率の相関を示す表とその図である。When the thickness of the outermost gold (Au) plating layer is b and the thickness of the gold tin (Au—Sn) plating layer 4 is c, the relationship between the plating layer thickness b / c value and the assembled piezoelectric device It is the table | surface which shows the correlation of the defect rate of an oscillation frequency, and its figure.

符号の説明Explanation of symbols

１・・・容器体
２・・・蓋体
３・・・金（Ａｕ）メッキ層
４・・・金錫（Ａｕ―Ｓｎ）メッキ層
５・・・水晶振動素子
６・・・導電性接着剤
７・・・外部端子

DESCRIPTION OF SYMBOLS 1 ... Container body 2 ... Cover body 3 ... Gold (Au) plating layer 4 ... Gold tin (Au-Sn) plating layer 5 ... Quartz crystal vibration element 6 ... Conductive adhesive 7 ... External terminal

Claims (1)

容器体と該容器体の開口部主面に形成された封止用導体パターンと、前記封止用導体パターンに対応した封止材が形成された蓋体とからなり、前記封止用導体パターンと前記封止材が熱溶融によって気密接合される圧電デバイスであって、
前記蓋体の表面には、前記封止材である金錫メッキ層が、５μｍ以上かつ１０μｍ以下の厚みで形成されており、
前記金錫メッキ層は、最外周の層が金メッキ層となるように、金メッキ層ならびに錫メッキ層が交互に積層されて構成されており、
前記最外周の金メッキ層の厚みをｂとし、前記金錫メッキ層の厚みをｃとした場合に、０．５ｃ≦ｂ≦０．６５ｃの関係式が満たされていることを特徴とする圧電デバイス。 The sealing conductor pattern includes a container body, a sealing conductor pattern formed on the main surface of the opening of the container body, and a lid body on which a sealing material corresponding to the sealing conductor pattern is formed. A piezoelectric device in which the sealing material is hermetically bonded by heat melting,
Wherein the surface of the lid, the sealing material is a gold-tin plated layer is formed in thickness of not less 5μm or more and 10 [mu] m,
The gold tin plating layer is configured by alternately laminating gold plating layers and tin plating layers so that the outermost peripheral layer is a gold plating layer,
The thickness of the outermost gold layer is b, the thickness of the gold tin plating layer when is c, wherein the relationship of 0.5c ≦ b ≦ 0.65c is satisfied piezoelectric device.
JP2006126884A 2006-04-28 2006-04-28 Piezoelectric device Expired - Fee Related JP4878207B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006126884A JP4878207B2 (en) 2006-04-28 2006-04-28 Piezoelectric device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006126884A JP4878207B2 (en) 2006-04-28 2006-04-28 Piezoelectric device

Publications (2)

Publication Number Publication Date
JP2007300406A JP2007300406A (en) 2007-11-15
JP4878207B2 true JP4878207B2 (en) 2012-02-15

Family

ID=38769528

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006126884A Expired - Fee Related JP4878207B2 (en) 2006-04-28 2006-04-28 Piezoelectric device

Country Status (1)

Country Link
JP (1) JP4878207B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103028804A (en) * 2012-12-28 2013-04-10 汕尾市栢林电子封装材料有限公司 Method for covering preformed soldering lug on chip sealing cover plate

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04303947A (en) * 1991-03-31 1992-10-27 Narumi China Corp Ceramic cap for airtight sealing use
JP2003078054A (en) * 2001-08-31 2003-03-14 Kyocera Corp Electronic component device
JP2004056193A (en) * 2002-07-16 2004-02-19 Seiko Instruments Inc Piezoelectric vibrator and manufacturing method thereof
JP2004129223A (en) * 2002-07-31 2004-04-22 Murata Mfg Co Ltd Piezoelectric component and manufacturing method thereof

Also Published As

Publication number Publication date
JP2007300406A (en) 2007-11-15

Similar Documents

Publication Publication Date Title
JP2013058864A (en) Piezoelectric device
JP2010035078A (en) Piezoelectric oscillator
JP2007060593A (en) Piezoelectric device and manufacturing method thereof
JP5101201B2 (en) Piezoelectric oscillator
JP2009267866A (en) Piezoelectric oscillator
JP5415141B2 (en) Communication module
JP4878207B2 (en) Piezoelectric device
JP5285496B2 (en) Communication module
JP5171148B2 (en) Piezoelectric oscillator
JP5188932B2 (en) Piezoelectric oscillator
JP4585908B2 (en) Method for manufacturing piezoelectric device
JP2009207068A (en) Piezoelectric device
JP4673670B2 (en) Method for manufacturing piezoelectric device
JP2017130827A (en) Piezoelectric device and method of manufacturing the same
JP5101192B2 (en) Piezoelectric device
JP4549253B2 (en) Piezoelectric device
JP5368135B2 (en) Piezoelectric device
JP6418810B2 (en) Crystal device
JP5188753B2 (en) Piezoelectric oscillator
JP2007202095A (en) Piezoelectric device
JP5210077B2 (en) Piezoelectric oscillator
JP2011055033A (en) Piezoelectric oscillator
JP2007067832A (en) Piezoelectric oscillator and manufacturing method thereof
JP4429080B2 (en) Piezoelectric vibrator
JP2010087714A (en) Piezoelectric oscillator

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090224

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110712

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110912

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20111122

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20111125

R150 Certificate of patent or registration of utility model

Ref document number: 4878207

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20141209

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20141209

Year of fee payment: 3

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20141209

Year of fee payment: 3

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees