JP4866656B2 - 光電変換膜積層型カラー固体撮像装置 - Google Patents
光電変換膜積層型カラー固体撮像装置 Download PDFInfo
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- JP4866656B2 JP4866656B2 JP2006139111A JP2006139111A JP4866656B2 JP 4866656 B2 JP4866656 B2 JP 4866656B2 JP 2006139111 A JP2006139111 A JP 2006139111A JP 2006139111 A JP2006139111 A JP 2006139111A JP 4866656 B2 JP4866656 B2 JP 4866656B2
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/144—Devices controlled by radiation
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Description
図1は、本発明の一実施形態に係る光電変換膜積層型カラー固体撮像装置の表面模式図である。本実施形態の光電変換膜積層型カラー固体撮像装置10は、基板11の受光面上に複数の画素12が正方格子状に配列形成される。
図4は、本発明の第2の実施形態に係るハイブリッド型の光電変換膜積層型カラー固体撮像装置の断面模式図である。本実施形態の光電変換膜積層型カラー固体撮像装置は、図2に示す第1の実施形態に係る光電変換膜積層型カラー固体撮像装置と略同一構造になっており、カラーフィルタ層を有機材料で形成している点のみ異なる。このため、同一構造部材には図2と同一符号を付してその説明は省略し、異なる部分についてのみ説明する。
12 画素
12a 緑色G及び赤色Rの検出画素
12b 緑色G及びマゼンダ色Mgの検出画素
21 半導体基板
22 pウェル層
23 n型領域
24 表面p層
25 電荷蓄積部
27 透明絶縁層
28 画素電極膜
29,53 縦配線
30 緑色に感度を有する光電変換膜
31 共通電極膜(対向電極膜)
33 無機材料でなるカラーフィルタ層
41,42,43,44 信号読出回路
52 有機材料でなるカラーフィルタ層
Claims (7)
- 半導体基板と、該半導体基板の上層に積層され3原色のうちの第1色光を吸収して光電荷を発生させる光電変換膜と、前記半導体基板の表面部に配列形成され前記光電荷を蓄積する複数の電荷蓄積部と、前記半導体基板の表面部に配列形成され前記光電変換膜を透過した3原色のうちの第2色光及び第3色光の混色光を受光し発生した光電荷を蓄積する第1の複数のフォトダイオードと、前記半導体基板の表面部に配列形成され前記光電変換膜を透過した前記混色光のうち第2色光を受光し発生した光電荷を蓄積する第2の複数のフォトダイオードと、該第2のフォトダイオードの上部に設けられ前記第3色光を遮光するカラーフィルタ層と、前記電荷蓄積部と前記第1及び第2のフォトダイオードの各々の蓄積電荷量を読み出す信号読出手段とを備えることを特徴とする光電変換膜積層型カラー固体撮像装置。
- 前記カラーフィルタ層が無機化合物材料で形成されることを特徴とする請求項1に記載の光電変換膜積層型カラー固体撮像装置。
- 前記無機化合物材料がアモルファスシリコンまたは多結晶シリコンであることを特徴とする請求項2に記載の光電変換膜積層型カラー固体撮像装置。
- 前記無機化合物材料は、前記第3色光に対する平均透過率が前記第2色光に対する平均透過率の1/2以下であることを特徴とする請求項2又は請求項3に記載の光電変換膜積層型カラー固体撮像装置。
- 前記第1色光が緑色であり、第2色光が赤色であり、第3色光が青色であることを特徴とする請求項1乃至請求項4のいずれかに記載の光電変換膜積層型カラー固体撮像装置。
- 前記信号読出手段がMOSトランジスタあるいは電荷結合素子で構成されることを特徴とする請求項1乃至請求項5のいずれかに記載の光電変換膜積層型カラー固体撮像装置。
- 前記第1及び第2のフォトダイオードの各々の上部に入射光を当該フォトダイオードに集光するマイクロレンズが搭載されることを特徴とする請求項1乃至請求項6のいずれかに記載の光電変換膜積層型カラー固体撮像装置。
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JP2006139111A JP4866656B2 (ja) | 2006-05-18 | 2006-05-18 | 光電変換膜積層型カラー固体撮像装置 |
US11/746,666 US7667750B2 (en) | 2006-05-18 | 2007-05-10 | Photoelectric-conversion-layer-stack-type color solid-state imaging device |
KR1020070048836A KR100962449B1 (ko) | 2006-05-18 | 2007-05-18 | 광전 변환층 스택 타입 칼라 고상 이미징 장치 |
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JP2006139111A JP4866656B2 (ja) | 2006-05-18 | 2006-05-18 | 光電変換膜積層型カラー固体撮像装置 |
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JP2007311550A JP2007311550A (ja) | 2007-11-29 |
JP4866656B2 true JP4866656B2 (ja) | 2012-02-01 |
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Cited By (1)
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US11317068B2 (en) | 2018-11-07 | 2022-04-26 | Samsung Electronics Co., Ltd. | Signal processing apparatuses and signal processing methods |
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JP2007311550A (ja) | 2007-11-29 |
US20070279501A1 (en) | 2007-12-06 |
US7667750B2 (en) | 2010-02-23 |
KR100962449B1 (ko) | 2010-06-14 |
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