JP4866025B2 - Connection device - Google Patents

Connection device Download PDF

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JP4866025B2
JP4866025B2 JP2005187239A JP2005187239A JP4866025B2 JP 4866025 B2 JP4866025 B2 JP 4866025B2 JP 2005187239 A JP2005187239 A JP 2005187239A JP 2005187239 A JP2005187239 A JP 2005187239A JP 4866025 B2 JP4866025 B2 JP 4866025B2
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spring
connection terminal
connector
base portion
connection
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JP2007005251A (en
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岳司 吉田
佳治 佐名川
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Panasonic Corp
Panasonic Electric Works Co Ltd
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Panasonic Corp
Matsushita Electric Works Ltd
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本発明は、接続装置に関するものである。   The present invention relates to a connection device.

携帯機器などの小型化、薄型化、高性能化に伴って、携帯機器の器体内で２つの回路基板間（例えば、フレキシブル基板とプリント基板との間）を電気的に接続する接続装置としてのコネクタに対して、小型化、薄型化、相手側部材である相手側コネクタの複数の接続端子を各別に接続するコンタクトの数の増大、コンタクトの配列ピッチの狭ピッチ化などが望まれており、コンタクトの配列ピッチを０．５ｍｍとしたコネクタが提供されている。なお、この種のコネクタでは、コンタクトの狭ピッチ化に伴い、配列ピッチの高精度化だけでなく、隣り合うコンタクト間の間隔の高精度化も必要となっている。   As a portable device is miniaturized, thinned, and enhanced in performance, as a connection device for electrically connecting two circuit boards (for example, between a flexible board and a printed board) in the body of the portable device. For connectors, there is a demand for downsizing, thinning, increasing the number of contacts that connect multiple connection terminals of the mating connector, which is the mating member, and narrowing the arrangement pitch of the contacts. A connector having a contact arrangement pitch of 0.5 mm is provided. In this type of connector, along with the narrowing of contacts, it is necessary not only to increase the accuracy of the arrangement pitch but also to increase the accuracy of the spacing between adjacent contacts.

また、近年、ＢＧＡ（Ball Grid Array）やＣＳＰ（Chip Size Package）などの相手側部材において２次元アレイ状に配列された球状の接続端子それぞれと各別に接続される複数のコンタクト部を有する接続装置として、図１３に示すように、複数のスパイラル状のコンタクト部１０２をガラスエポキシ製の絶縁基板からなるベース部１０１の一表面側において２次元アレイ状に配列した構成のものが提案されている（例えば、特許文献１参照）。ここにおいて、コンタクト部１０２は、銅およびニッケルにより形成されている。また、ベース部１０１には、当該ベース部１０１の厚み方向へのコンタクト部１０２の変位を可能とするための貫通孔１０１ｂが貫設されている。なお、上記特許文献１では、相手側部材の接続端子の配列ピッチを０．４ｍｍとした場合に、ベース部１０１の厚みを１ｍｍ程度、貫通孔１０１ｂの内径を０．３ｍｍ程度とすることが記載されている。
特開２００２−１７５８５９号公報 Further, in recent years, a connection device having a plurality of contact portions respectively connected to spherical connection terminals arranged in a two-dimensional array on a counterpart member such as BGA (Ball Grid Array) or CSP (Chip Size Package). As shown in FIG. 13, a configuration is proposed in which a plurality of spiral contact portions 102 are arranged in a two-dimensional array on one surface side of a base portion 101 made of a glass epoxy insulating substrate ( For example, see Patent Document 1). Here, the contact portion 102 is made of copper and nickel. The base portion 101 is provided with a through hole 101 b for allowing the contact portion 102 to be displaced in the thickness direction of the base portion 101. Note that, in Patent Document 1, when the arrangement pitch of the connection terminals of the counterpart member is 0.4 mm, the thickness of the base portion 101 is about 1 mm and the inner diameter of the through hole 101b is about 0.3 mm. Has been.
JP 2002-175859 A

ところで、図１３に示した構成の接続装置では、コンタクト部１０２がベース部１０１の厚み方向へ変位可能であって、コンタクト部１０２のばね力によって所望の接圧を確保するようになっているが、スパイラル状のコンタクト部１０２の一端部がベース部１０１の上記一表面側において貫通孔１０１ｂの周縁に形成された円環状のフレーム部１０３に連続一体に連結される一方で他端部が自由端となっており、相手側部材との接続時にコンタクト部１０２の上記一端部付近に応力が集中するので、球状の接続端子のような突起状の接続端子の突出高さのばらつきに起因して、変位量の大きなコンタクト部１０２が破断されやすかった。   By the way, in the connection device having the configuration shown in FIG. 13, the contact portion 102 can be displaced in the thickness direction of the base portion 101, and a desired contact pressure is secured by the spring force of the contact portion 102. One end portion of the spiral contact portion 102 is continuously and integrally connected to an annular frame portion 103 formed on the periphery of the through hole 101b on the one surface side of the base portion 101, while the other end portion is a free end. Since stress concentrates in the vicinity of the one end of the contact portion 102 at the time of connection with the counterpart member, due to variations in the protruding height of the protruding connection terminal such as a spherical connection terminal, The contact portion 102 having a large displacement amount was easily broken.

本発明は上記事由に鑑みて為されたものであり、その目的は、従来に比べて相手側部材の突起状の接続端子の突出高さのばらつきに起因した破損が起こりにくい接続装置を提供することにある。   The present invention has been made in view of the above reasons, and an object of the present invention is to provide a connection device that is less likely to be damaged due to variations in the protruding heights of the protruding connection terminals of the counterpart member as compared with the related art. There is.

請求項１の発明は、相手側部材の複数の突起状の接続端子それぞれに対応する各部位に接続端子が挿入される孔からなる挿入部が設けられたベース部と、ベース部の各挿入部内に設けられてベース部に一端部が連結されるとともに接続端子の挿入方向に交差する方向に伸縮可能なばね形状に形成された複数のばね部と、相手側部材との対向面となる前面側で各ばね部と挿入部の周部とに跨って積層された導電層を少なくとも有し各ばね部に積層されている部位が接続端子に弾接可能なコンタクト部とを備えてなり、各ばね部は、接続端子の挿入方向に交差する面内で蛇行する形状であり、接続端子の挿入方向に交差する方向に撓み可能となっており、前記一端部とは反対側の他端部が接続端子の挿入方向および挿入方向に交差する方向に変位可能で、複数のばね部は、対向して、接続端子の挿入方向に交差する方向から接続端子を挟むことが可能であり、ベース部とばね部とは、半導体基板を用いて一体に形成されてなることを特徴とする。 The invention according to claim 1, a base portion insertion portion comprising a plurality of holes to be inserted the connecting terminals to each part corresponding to each protruding connection terminals of the mating member is provided, each insertion portion of the base portion A plurality of spring portions formed in a spring shape that are connected to the base portion and extendable in a direction intersecting the insertion direction of the connection terminal, and a front surface side that is a facing surface of the mating member in it and a respective spring portion and the insertion portion of the peripheral portion and the portion which is stacked on the spring portion having at least a conductive layer laminated over the possible elastic contact to the connecting terminal contact portions, each spring The part is meandering in a plane that intersects the insertion direction of the connection terminal, can be bent in a direction that intersects the insertion direction of the connection terminal, and the other end opposite to the one end is connected. Displacement in the direction of terminal insertion and the direction intersecting the insertion direction In performance, the plurality of spring portions, facing a the direction intersecting the insertion direction of the connection terminal can sandwich the connecting terminal, and the base portion and the spring portion is formed integrally with a semiconductor substrate It is characterized by.

この発明によれば、ベース部の各挿入部内に設けられてベース部に一端部が連結されるとともに接続端子の挿入方向に交差する方向に伸縮可能なばね形状に形成された複数のばね部を備えており、ベース部の各挿入部内では相手側部材の突起状の接続端子の挿入方向および挿入方向に交差する方向に他端部が変位可能な複数のばね部により接続端子を挟むので、相手側部材の突起状の接続端子の突出高さのばらつきに比べて各ばね部の変位量のばらつきを低減でき、相手側部材の突起状の接続端子の突出高さのばらつきに起因したばね部の破断が起こりにくいから、従来に比べて相手側部材の突起状の接続端子の突出高さのばらつきに起因した破損が起こりにくくなる。また、この発明によれば、ベース部とばね部とが、半導体基板を用いて一体に形成されているので、一般的な半導体微細加工プロセスによりベース部の挿入部および各ばね部を形成することができるから、従来に比べて薄型化、小型化、狭ピッチ化が可能になる。   According to the present invention, the plurality of spring portions provided in the respective insertion portions of the base portion and having one end connected to the base portion and capable of extending and contracting in a direction crossing the insertion direction of the connection terminal are provided. In each insertion portion of the base portion, the connection terminal is sandwiched by a plurality of spring portions whose other end portions can be displaced in the insertion direction of the protruding connection terminal of the counterpart member and the direction intersecting the insertion direction. The variation of the displacement amount of each spring part can be reduced compared to the variation of the protruding height of the protruding connection terminal of the side member, and the variation of the spring part due to the variation of the protruding height of the protruding connection terminal of the counterpart member Since breakage is unlikely to occur, breakage due to variations in the protruding height of the protruding connection terminal of the counterpart member is less likely to occur than in the past. According to the present invention, since the base portion and the spring portion are integrally formed using the semiconductor substrate, the insertion portion of the base portion and each spring portion are formed by a general semiconductor microfabrication process. Therefore, it is possible to reduce the thickness, size, and pitch as compared with the prior art.

請求項２の発明は、請求項１の発明において、前記ばね部は、前記各挿入部内に少なくとも３つずつ設けられ、前記挿入部内の複数の前記ばね部は、前記挿入部への前記接続端子の挿入方向に沿った前記挿入部の中心線に対して回転対称となるように形成されてなることを特徴とする。   According to a second aspect of the present invention, in the first aspect of the present invention, at least three of the spring portions are provided in each of the insertion portions, and the plurality of spring portions in the insertion portions are the connection terminals to the insertion portions. It is formed so as to be rotationally symmetric with respect to the center line of the insertion portion along the insertion direction.

この発明によれば、前記接続端子の突出高さのばらつきだけでなく前記接続端子の傾きを許容することができる。   According to this invention, not only the variation in the protruding height of the connection terminal but also the inclination of the connection terminal can be allowed.

請求項３の発明は、請求項１または請求項２の発明において、前記各ばね部は、前記ベース部の厚み方向に沿った幅寸法に関して、前記他端部の幅寸法に比べて前記一端部の幅寸法が大きく設定されてなることを特徴とする。 The invention according to claim 3, in the invention of claim 1 or claim 2, wherein each spring portion is in the width dimension along the thickness direction of the base portion, the one end than the width dimension of the other end The width dimension is set to be large.

この発明によれば、前記ばね部が応力の集中する前記一端部付近で破断されるのをより確実に防止することができる。 According to this invention, it can prevent more reliably that the said spring part is fractured | ruptured near the said one end part where stress concentrates .

請求項１の発明では、従来に比べて相手側部材の突起状の接続端子の突出高さのばらつきに起因した破損が起こりにくくなるという効果がある。   According to the first aspect of the present invention, there is an effect that the damage due to the variation in the protruding height of the protruding connection terminal of the mating member is less likely to occur than in the conventional case.

（実施形態１）
本実施形態では、接続装置として、回路基板間の電気的接続に利用可能なコネクタを例示する。 (Embodiment 1)
In this embodiment, the connector which can be utilized for the electrical connection between circuit boards is illustrated as a connection apparatus.

図１に示した本実施形態のコネクタＡは、図２に示すようにプリント基板３０に実装され、図３に示すようにフレキシブル基板４０に実装された相手側部材たるコネクタ（以下、相手側コネクタと称す）Ｂと電気的に接続される。   A connector A of the present embodiment shown in FIG. 1 is mounted on a printed circuit board 30 as shown in FIG. 2, and is a connector (hereinafter referred to as a counterpart connector) mounted on a flexible board 40 as shown in FIG. Electrically connected to B.

ここにおいて、相手側コネクタＢは、第１のシリコン基板からなる第１の半導体基板を用いて形成した矩形板状のコネクタボディ２１と、コネクタボディ２１の一表面上に所定の配列ピッチ（例えば、５００μｍ）でマトリクス状（２次元アレイ状）に配列された複数（例えば、１００個）の突起状（ここでは、球状）の接続端子２３とを備えており、コネクタボディ２１の上記一表面上で各接続端子２３それぞれに接続された金属配線２４がコネクタボディ２１の厚み方向に貫設した貫通配線（図示せず）を介してフレキシブル基板４０の導体パターン（図示せず）と電気的に接続可能となっている。   Here, the mating connector B includes a rectangular plate-like connector body 21 formed using a first semiconductor substrate made of a first silicon substrate, and a predetermined arrangement pitch (for example, on one surface of the connector body 21). A plurality of (for example, 100) protruding (here, spherical) connection terminals 23 arranged in a matrix (two-dimensional array) in a matrix shape (500 μm) on the one surface of the connector body 21 The metal wiring 24 connected to each connection terminal 23 can be electrically connected to a conductor pattern (not shown) of the flexible substrate 40 through a through wiring (not shown) penetrating in the thickness direction of the connector body 21. It has become.

コネクタＡは、相手側コネクタＢの各接続端子２３それぞれに対応する各部位に接続端子２３が挿入される矩形状の挿入部１１ａが設けられたベース部１１と、ベース部１１の各挿入部１１ａ内に設けられて一端部がベース部１１に連結され各挿入部１１ａ内それぞれにおいて接続端子２３を挟む複数（本実施形態では、４つ）のばね部１２と、ベース部１１における相手側コネクタＢとの対向面（図１（ｂ）における上面）である前面側で挿入部１１ａ内の各ばね部１２と挿入部１１ａの周部とに跨って積層された導電層（例えば、金属膜など）からなり各ばね部１２に積層されている部位が接続端子２３に弾接するコンタクト部１３とを備えている。要するに、相手側コネクタＢの複数の接続端子２３とコネクタＡの複数のコンタクト部１３とは一対一で対応している。   The connector A includes a base portion 11 provided with a rectangular insertion portion 11a into which the connection terminal 23 is inserted at each portion corresponding to each connection terminal 23 of the mating connector B, and each insertion portion 11a of the base portion 11. A plurality of (four in the present embodiment) spring portions 12 that are provided in the inside and are connected to the base portion 11 and have one end portion connected to the base portion 11 and sandwich the connection terminal 23 in each insertion portion 11a, and a mating connector B in the base portion 11 Conductive layer (for example, a metal film, etc.) laminated on the front side which is the surface opposite to (a top surface in FIG. 1B) and straddling each spring part 12 in the insertion part 11a and the peripheral part of the insertion part 11a The portion laminated on each spring portion 12 is provided with a contact portion 13 that elastically contacts the connection terminal 23. In short, the plurality of connection terminals 23 of the mating connector B and the plurality of contact portions 13 of the connector A correspond one-to-one.

ここで、ベース部１１の各挿入部１１ａ内に設けられた４つのばね部１２は、ベース部１１に一端部が連続一体に連結されるとともに、接続端子２３の挿入方向に伸縮可能なばね形状、具体的には接続端子２３の挿入方向に交差する面内で蛇行する形状（上記面内で複数回折れ曲がったつづら折れ状の形状）に形成されており、各挿入部１１ａ内それぞれにおいて接続端子１３の挿入方向に交差する方向から接続端子１３を挟むようになっている。要するに、各ばね部１２は、接続端子２３の挿入方向（図１（ｂ）における下方向）に交差する方向に撓み可能となっており、各ばね部１２の他端部が接続端子２３の挿入方向および挿入方向に交差する方向に変位可能となっている。ここにおいて、挿入部１１ａ内の４つのばね部１２は、挿入部１１ａへの接続端子１３の挿入方向に沿った中心線に対して回転対称となるように形成されており、挿入部１１ａ内で４つのばね部１２の各他端部で囲まれた領域に挿入された接続端子２３と当該接続端子２３に接触するコンタクト部１３とが各ばね部１２のばね力によって弾接可能となるように、挿入部１１ａ内において互いに対向する２つのばね部１２の他端部間の距離を接続端子２３の外形寸法よりも短く設定してある。また、各ばね部１２は、厚み方向の寸法を幅方向（図１（ｂ）における上下方向）の寸法に比べて小さく設定してあり、幅方向の寸法をベース部１１の厚み方向（図１（ｂ）における上下方向）の寸法に比べて小さく設定してある。なお、本実施形態における各挿入部１１ａは、ベース１１の厚み方向の両面（図１（ｂ）における上面および下面）が開放されているが、少なくとも相手側コネクタＢとの対向面である前面が開放されていればよい。   Here, the four spring parts 12 provided in each insertion part 11a of the base part 11 are connected to the base part 11 so that one end part thereof is continuously and integrally connected, and can be expanded and contracted in the insertion direction of the connection terminal 23. Specifically, it is formed in a meandering shape in a plane that intersects the insertion direction of the connection terminal 23 (a bent shape that is bent a plurality of times in the plane), and the connection terminal in each insertion portion 11a. The connection terminal 13 is sandwiched from the direction intersecting the insertion direction of 13. In short, each spring part 12 can be bent in a direction crossing the insertion direction of the connection terminal 23 (downward direction in FIG. 1B), and the other end of each spring part 12 is inserted into the connection terminal 23. It can be displaced in a direction that intersects the direction and the insertion direction. Here, the four spring portions 12 in the insertion portion 11a are formed so as to be rotationally symmetric with respect to the center line along the insertion direction of the connection terminal 13 to the insertion portion 11a. The connection terminal 23 inserted in the region surrounded by the other end portions of the four spring portions 12 and the contact portion 13 contacting the connection terminal 23 can be elastically contacted by the spring force of each spring portion 12. The distance between the other end portions of the two spring portions 12 facing each other in the insertion portion 11a is set to be shorter than the outer dimension of the connection terminal 23. Each spring portion 12 has a thickness direction dimension set smaller than a width direction (vertical direction in FIG. 1B), and the width direction dimension is set to the thickness direction of the base portion 11 (FIG. 1). It is set smaller than the dimension in the vertical direction in (b). In addition, each insertion part 11a in this embodiment is open on both surfaces in the thickness direction of the base 11 (upper surface and lower surface in FIG. 1B), but at least a front surface that is a surface facing the mating connector B is provided. It only needs to be open.

また、本実施形態では、コネクタＡにおけるベース部１１と各ばね部１２とが、第２のシリコン基板からなる第２の半導体基板１０（図５（ａ）参照）を用いて形成されており、コンタクト部１３をばね部１２に積層された導電層により構成してあるが、第２の半導体基板１０におけるばね部１２の形成部位に不純物をドーピングすることでばね部１２に導電性を付与して、導電性が付与されたばね部１２と当該ばね部１２に積層された導電層とでコンタクト部１３を構成するようにすれば、相手側コネクタＢの接続端子２３とコンタクト部１３との接触抵抗をより低減することができる。   Moreover, in this embodiment, the base part 11 and each spring part 12 in the connector A are formed using the 2nd semiconductor substrate 10 (refer FIG. 5A) which consists of a 2nd silicon substrate, The contact portion 13 is composed of a conductive layer laminated on the spring portion 12, but conductivity is imparted to the spring portion 12 by doping impurities in the formation portion of the spring portion 12 in the second semiconductor substrate 10. If the contact portion 13 is constituted by the spring portion 12 provided with conductivity and the conductive layer laminated on the spring portion 12, the contact resistance between the connection terminal 23 of the mating connector B and the contact portion 13 is reduced. It can be further reduced.

また、コネクタＡは、コンタクト部１３のうちベース部１１の前面で挿入部１１ａの周部の全周に亘って形成された部位が、ベース部１１の厚み方向に貫設された貫通配線１６を介してベース部１１の後面（図１（ｂ）における下面）の外部接続電極１７と電気的に接続されており、図４に示すように各外部接続電極１７それぞれが半田ボール１８を介してプリント基板３０の導体パターン３３と電気的に接続可能となっている。なお、コンタクト部１３と貫通配線１６との間に両者を電気的に接続する配線（金属配線、拡散層配線など）を介在させてもよいことは勿論である。   Further, the connector A includes a through-wiring 16 in which a portion of the contact portion 13 formed over the entire circumference of the peripheral portion of the insertion portion 11 a on the front surface of the base portion 11 extends in the thickness direction of the base portion 11. Are electrically connected to the external connection electrodes 17 on the rear surface of the base portion 11 (the lower surface in FIG. 1B), and each external connection electrode 17 is printed via a solder ball 18 as shown in FIG. It can be electrically connected to the conductor pattern 33 of the substrate 30. Of course, a wiring (metal wiring, diffusion layer wiring, etc.) that electrically connects the contact portion 13 and the through wiring 16 may be interposed.

コネクタＡの各コンタクト部１３それぞれに相手側コネクタＢの各接続端子２３を電気的に接続する際には、図４（ａ）に示すように、プリント基板３０に実装したコネクタＡとフレキシブル基板４０に実装した相手側コネクタＢとを対向させてから、図４（ｂ）に示すように、コネクタＡに相手側コネクタＢを近づければよい。ここにおいて、コネクタＡは各挿入部１１ａ内に設けられた４つのばね部１２が接続端子２３の挿入方向に交差する方向へ撓むことができるので、各挿入部１１ａごとに４つのばね部１２が相手側コネクタＢの突起状の接続端子２３を挟むように変形するから、球状の接続端子２３の突出高さなどのばらつきや接続端子２３の傾きなどを許容することができるとともに、所望の接圧を満足することが可能となる。なお、コネクタＡと相手側コネクタＢとの電気的接続状態を維持するためのロック機構は、例えば、プリント基板３０およびフレキシブル基板４０を収納する機器（例えば、携帯機器など）の器体や、各基板３０，４０に設ければよいが、各コネクタＡ，Ｂに設けてもよい。   When each connection terminal 23 of the mating connector B is electrically connected to each contact portion 13 of the connector A, as shown in FIG. 4A, the connector A and the flexible substrate 40 mounted on the printed circuit board 30 are used. The mating connector B may be brought close to the connector A as shown in FIG. Here, since the connector A can be bent in the direction in which the four spring portions 12 provided in each insertion portion 11a intersect the insertion direction of the connection terminal 23, the four spring portions 12 are provided for each insertion portion 11a. Is deformed so as to sandwich the protruding connection terminal 23 of the mating connector B, so that variation in the protruding height of the spherical connection terminal 23, inclination of the connection terminal 23, and the like can be allowed, and a desired connection can be made. It is possible to satisfy the pressure. In addition, the lock mechanism for maintaining the electrical connection state of the connector A and the mating connector B includes, for example, the body of a device (for example, a portable device) that houses the printed circuit board 30 and the flexible circuit board 40, It may be provided on the substrates 30 and 40, but may be provided on each connector A and B.

以下、コネクタＡの製造方法について図５を参照しながら簡単に説明する。   Hereinafter, the manufacturing method of the connector A will be briefly described with reference to FIG.

まず、第２の半導体基板１０の裏面側（図５（ａ）における下面側）の全面にシリコン酸化膜からなる絶縁膜５１を形成した後、フォトリソグラフィ技術およびエッチング技術を利用して、絶縁膜５１のうちベース部１１に対応する部位が残り且つ各挿入部１１ａそれぞれに対応する部位および各貫通配線１６用のスルーホールに対応する部位が除去されるように絶縁膜５１をパターニングすることによって、図５（ａ）に示す構造を得る。   First, after an insulating film 51 made of a silicon oxide film is formed on the entire back surface side (the lower surface side in FIG. 5A) of the second semiconductor substrate 10, an insulating film is formed by using a photolithography technique and an etching technique. 51, by patterning the insulating film 51 so that the portion corresponding to the base portion 11 remains and the portion corresponding to each insertion portion 11a and the portion corresponding to the through hole for each through wiring 16 are removed. The structure shown in FIG.

その後、パターニングされた絶縁膜５１をマスクとして、第２の半導体基板１０を裏面側から所定深さ（ここでは、第２の半導体基板１０においてばね部１２に対応する部位の厚みがばね部１２の幅寸法になる深さ）までエッチングして各挿入部１１ａの一部となる凹所１１ｂおよび各スルーホールそれぞれの一部となる有底孔（図示せず）を形成することによって、図５（ｂ）に示す構造を得る。ここにおいて、凹所１１ｂおよび有底孔を形成するエッチングに際しては、垂直深掘が可能なドライエッチング装置（例えば、誘導結合プラズマ型のドライエッチング装置など）を用いることにより、アルカリ系溶液を用いた異方性エッチングを行う場合に比べて、凹所１１ｂの配列ピッチを短縮することができ、ベース部１１の平面サイズの小型化を図れる。   Thereafter, using the patterned insulating film 51 as a mask, the second semiconductor substrate 10 has a predetermined depth from the back surface side (here, the thickness of the portion corresponding to the spring portion 12 in the second semiconductor substrate 10 is the thickness of the spring portion 12). Etching to a depth of a width dimension) to form a recess 11b that becomes a part of each insertion portion 11a and a bottomed hole (not shown) that becomes a part of each through hole, as shown in FIG. The structure shown in b) is obtained. Here, in the etching for forming the recess 11b and the bottomed hole, an alkaline solution was used by using a dry etching apparatus capable of vertical deep digging (for example, an inductively coupled plasma type dry etching apparatus). Compared with the case where anisotropic etching is performed, the arrangement pitch of the recesses 11b can be shortened, and the planar size of the base portion 11 can be reduced.

上述のように第２の半導体基板１０に複数の凹所１１ｂおよび複数の有底孔を形成した後、第２の半導体基板１０の裏面側の絶縁膜５１を除去してから、第２の半導体基板１０の主表面側（図５（ｂ）における上面側）の全面にシリコン酸化膜からなる絶縁膜５２を形成し、続いて、フォトリソグラフィ技術およびエッチング技術を利用して、絶縁膜５２のうちベース部１１および各ばね部１２それぞれに対応する部位が残り且つ各スルーホールそれぞれに対応する部位が除去されるように絶縁膜５２をパターニングすることによって、図５（ｃ）に示す構造を得る。   After forming the plurality of recesses 11b and the plurality of bottomed holes in the second semiconductor substrate 10 as described above, the insulating film 51 on the back surface side of the second semiconductor substrate 10 is removed, and then the second semiconductor An insulating film 52 made of a silicon oxide film is formed on the entire main surface side (the upper surface side in FIG. 5B) of the substrate 10, and then, using the photolithography technique and the etching technique, By patterning the insulating film 52 so that the portions corresponding to the base portion 11 and the respective spring portions 12 remain and the portions corresponding to the respective through holes are removed, the structure shown in FIG. 5C is obtained.

次に、パターニングされた絶縁膜５２をマスクとして、第２の半導体基板１０を主表面側からエッチングして挿入部１１ａおよび各ばね部１２および各スルーホールを形成することによって、図５（ｄ）に示す構造を得る。なお、このエッチングの際には、垂直深掘が可能なドライエッチング装置（例えば、誘導結合プラズマ型のドライエッチング装置など）を用いる。   Next, by using the patterned insulating film 52 as a mask, the second semiconductor substrate 10 is etched from the main surface side to form the insertion portion 11a, each spring portion 12, and each through hole, so that FIG. The structure shown in is obtained. In this etching, a dry etching apparatus capable of vertical deep digging (for example, an inductively coupled plasma type dry etching apparatus) is used.

その後、第２の半導体基板１０の主表面側の絶縁膜５２をエッチング除去することで図５（ｅ）に示す構造を得てから、第２の半導体基板１０の主表面側にメタルマスクを用いて各コンタクト部１３を形成することによって、図５（ｆ）に示す構造を得る。その後は、貫通配線１６を形成し、第２の半導体基板１０の裏面側に外部接続電極１７を形成してから、第２の半導体基板１０をダイシング工程により個々のチップ（コネクタＡ）に分離すればよい。   Thereafter, the structure shown in FIG. 5E is obtained by etching away the insulating film 52 on the main surface side of the second semiconductor substrate 10, and then a metal mask is used on the main surface side of the second semiconductor substrate 10. By forming each contact portion 13, the structure shown in FIG. Thereafter, the through wiring 16 is formed, the external connection electrode 17 is formed on the back surface side of the second semiconductor substrate 10, and then the second semiconductor substrate 10 is separated into individual chips (connectors A) by a dicing process. That's fine.

以上説明した本実施形態のコネクタＡは、ベース部１１の各挿入部１１ａ内に設けられてベース部１１に一端部が連結されるとともに接続端子１３の挿入方向に交差する面内で蛇行する形状に形成され各挿入部１１ａ内それぞれにおいて接続端子２３の挿入方向に交差する方向から接続端子２３を挟む複数のばね部１２を備えており、ベース部１１の各挿入部１１ａ内では相手側部材たる相手側コネクタＢの突起状の接続端子２３の挿入方向および挿入方向に交差する方向に他端部が変位可能な複数のばね部１２により接続端子２３を挟むので、相手側コネクタＢのコネクタボディ２１におけるベース部１１との対向面からの接続端子２３の突出高さのばらつきに比べて各ばね部１２の変位量のばらつきを低減でき、相手側コネクタＢの突起状の接続端子２３の突出高さのばらつきに起因したばね部１２の破断が起こりにくいから、従来に比べて相手側コネクタＢの突起状の接続端子２３の突出高さのばらつきに起因した破損が起こりにくくなる。また、本実施形態のコネクタＡでは、各挿入部１１ａ内にばね部１２が４つずつ設けられ、挿入部１１ａ内の４つのばね部１２が、挿入部１１ａへの接続端子１３の挿入方向に沿った中心線に対して回転対称となるように形成されているので、接続端子２３の突出高さのばらつきだけでなく接続端子２３の傾きを許容することができる。なお、各挿入部１１ａ内のばね部１２の数は４つに限定するものではなく、接続端子２３の挿入方向に伸縮可能なばね形状であって挿入部１１ａへの接続端子１３の挿入方向に沿った中心線に対して回転対称となるように形成されていれば３つでも接続端子２３の傾きを許容することができ、少なくとも３つ設けられていればよい。   The connector A according to the present embodiment described above is provided in each insertion portion 11a of the base portion 11, has one end connected to the base portion 11, and meanders in a plane intersecting the insertion direction of the connection terminal 13. And a plurality of spring portions 12 sandwiching the connection terminal 23 from the direction intersecting the insertion direction of the connection terminal 23 in each insertion portion 11a. Each insertion portion 11a of the base portion 11 is a counterpart member. Since the connection terminal 23 is sandwiched between the insertion direction of the protruding connection terminal 23 of the mating connector B and the plurality of spring portions 12 whose other end portions can be displaced in a direction crossing the insertion direction, the connector body 21 of the mating connector B The variation in the amount of displacement of each spring portion 12 can be reduced compared to the variation in the protruding height of the connection terminal 23 from the surface facing the base portion 11, and the protrusion of the mating connector B Since the spring portion 12 is less likely to break due to the variation in the protruding height of the connection terminal 23, the damage due to the variation in the protruding height of the protruding connection terminal 23 of the mating connector B occurs compared to the conventional case. It becomes difficult. Moreover, in the connector A of this embodiment, four spring parts 12 are provided in each insertion part 11a, and the four spring parts 12 in the insertion part 11a are in the insertion direction of the connection terminal 13 to the insertion part 11a. Since it is formed so as to be rotationally symmetric with respect to the center line along, it is possible to allow not only the variation in the protruding height of the connection terminal 23 but also the inclination of the connection terminal 23. In addition, the number of the spring parts 12 in each insertion part 11a is not limited to four, It is a spring shape which can be expanded-contracted in the insertion direction of the connection terminal 23, Comprising: In the insertion direction of the connection terminal 13 to the insertion part 11a As long as it is formed so as to be rotationally symmetric with respect to the center line along the line, the inclination of the connection terminal 23 can be allowed, and it is sufficient that at least three are provided.

ところで、図１３に示した構成の接続装置では、ベース部１０１の基礎となる絶縁基板に貫通孔１０１ｂを形成する工程において、ドリル加工により各貫通孔１０１ｂを個別に形成しているので、貫通孔１０１ｂの配列ピッチおよび貫通孔１０１ｂ間の間隔それぞれの高精度化が難しいとともに、貫通孔１０１ｂのより一層の狭ピッチ化が難しく、接続装置全体としてのより一層の小型化が難しかった。また、図１３に示した構成の接続装置では、ベース部１０１とコンタクト部１０２とが互いに異なる材料により形成されているので、ベース部１０１の貫通孔１０１ｂとコンタクト部１０２との位置合わせ精度の関係からも、貫通孔１０１ｂおよびコンタクト部１０２の狭ピッチ化が難しく、接続装置全体のより一層の小型化が難しかった。   By the way, in the connection apparatus having the configuration shown in FIG. 13, each through hole 101 b is individually formed by drilling in the step of forming the through hole 101 b in the insulating substrate serving as the basis of the base portion 101. It is difficult to increase the accuracy of the arrangement pitch of 101b and the interval between the through holes 101b, and it is difficult to further reduce the pitch of the through holes 101b, and it is difficult to further reduce the size of the entire connecting device. Further, in the connection device having the configuration shown in FIG. 13, since the base portion 101 and the contact portion 102 are formed of different materials, the relationship of the alignment accuracy between the through hole 101 b of the base portion 101 and the contact portion 102. Therefore, it is difficult to reduce the pitch of the through holes 101b and the contact portions 102, and it is difficult to further reduce the size of the entire connection device.

これに対して、本実施形態のコネクタＡでは、ベース部１１の各挿入部１１ａ内に設けられる各４つずつのばね部１２が、ベース部１１とともに第２の半導体基板１０を用いてベース部１１と一体に形成されており、一般的な半導体微細加工プロセスによりベース部１１の各挿入部１１ａおよび各ばね部１２を形成することができるので、従来に比べて薄型化、小型化、狭ピッチ化が可能になる。ここにおいて、本実施形態のコネクタＡでは、シリコンにより形成されたばね部１２のばね力によって接続端子２３とコンタクト部１３との所望の接圧を確保することができるので、図１３に示した従来例のように銅膜とニッケル膜とを積層した金属膜からなるコンタクト部１０２のみのばね力によって接圧を確保する構造に比べて、接続端子２３とコンタクト部１３との接圧を高めることができる。なお、ニッケルはヤング率が２０４ＧＰａ、破断強度が５８ＭＰａであるのに対して、シリコンはヤング率が１６９ＧＰａ、破断強度が２０００ＭＰａであり、本実施形態のコネクタＡの方が従来例に比べて、接圧を確保するための構造部が破壊されにくい。   On the other hand, in the connector A of the present embodiment, each of the four spring portions 12 provided in each insertion portion 11 a of the base portion 11 is formed using the second semiconductor substrate 10 together with the base portion 11. 11 and each insert portion 11a and each spring portion 12 of the base portion 11 can be formed by a general semiconductor microfabrication process, so that it is thinner, smaller, and narrower than conventional ones. Can be realized. Here, in the connector A of the present embodiment, a desired contact pressure between the connection terminal 23 and the contact portion 13 can be ensured by the spring force of the spring portion 12 formed of silicon. Therefore, the conventional example shown in FIG. The contact pressure between the connection terminal 23 and the contact portion 13 can be increased as compared with the structure in which the contact pressure is ensured only by the spring force of the contact portion 102 made of a metal film in which a copper film and a nickel film are laminated. . Nickel has a Young's modulus of 204 GPa and a breaking strength of 58 MPa, whereas silicon has a Young's modulus of 169 GPa and a breaking strength of 2000 MPa. The connector A of the present embodiment is in contact with the conventional example. The structure for securing pressure is not easily destroyed.

（実施形態２）
本実施形態において接続装置として例示するコネクタＡの基本構成は実施形態１と略同じであって、実施形態１ではベース部１１の各挿入部１１ａ内において４つのばね部１２が配置されていたのに対して、図６に示すように、ベース部１１の各挿入部１１ａ内に２つのばね部１２が配置されており、各ばね部１２の他端部がベース部１１の厚み方向に直交する面内でＬ字状の形状に形成されている点が相違する。他の構成は実施形態１と同じである。 (Embodiment 2)
In this embodiment, the basic configuration of the connector A exemplified as the connection device is substantially the same as that of the first embodiment. In the first embodiment, the four spring portions 12 are arranged in each insertion portion 11 a of the base portion 11. On the other hand, as shown in FIG. 6, two spring portions 12 are arranged in each insertion portion 11 a of the base portion 11, and the other end portion of each spring portion 12 is orthogonal to the thickness direction of the base portion 11. The difference is that it is formed in an L-shape in the plane. Other configurations are the same as those of the first embodiment.

（実施形態３）
本実施形態において接続装置として例示するコネクタＡの基本構成は実施形態１と略同じであって、実施形態１ではベース部１１の各挿入部１１ａ内において４つのばね部１２が配置されていたのに対して、図７に示すように、ベース部１１の各挿入部１１ａ内に２つのばね部１２が配置されている点が相違する。他の構成は実施形態１と同じである。 (Embodiment 3)
In this embodiment, the basic configuration of the connector A exemplified as the connection device is substantially the same as that of the first embodiment. In the first embodiment, the four spring portions 12 are arranged in each insertion portion 11 a of the base portion 11. On the other hand, as shown in FIG. 7, the difference is that two spring portions 12 are arranged in each insertion portion 11 a of the base portion 11. Other configurations are the same as those of the first embodiment.

（実施形態４）
本実施形態において接続装置として例示するコネクタＡの基本構成は実施形態１と略同じであって、図８に示すように、コンタクト部１３が実施形態１に比べて厚い導電層により構成され、コンタクト部１３が、ばね部１２を兼ねている点が相違する。他の構成は実施形態１と同じである。 (Embodiment 4)
The basic configuration of the connector A exemplified as a connection device in this embodiment is substantially the same as that of the first embodiment. As shown in FIG. 8, the contact portion 13 is formed of a thicker conductive layer than that of the first embodiment. The point that the part 13 serves as the spring part 12 is different. Other configurations are the same as those of the first embodiment.

本実施形態では、実施形態１に比べて、コンタクト部１３における相手側コネクタＢの接続端子２３との接触面積を増大させることができるので、コンタクト部１３と接続端子２３との接触抵抗を低減することができる。   In the present embodiment, the contact area between the contact portion 13 and the connection terminal 23 of the mating connector B can be increased as compared with the first embodiment, so that the contact resistance between the contact portion 13 and the connection terminal 23 is reduced. be able to.

（実施形態５）
本実施形態において接続装置として例示するコネクタＡの基本構成は実施形態１と略同じであって、図９に示すように、各ばね部１２においてベース部１１の厚み方向に沿った幅寸法に関して、ベース部１１に連続一体に連結されている一端部とは反対側の他端部の幅寸法に比べて、上記一端部の幅寸法が大きく設定されている点や、ベース部１１の前面上で各コンタクト部１３それぞれに電気的に接続された金属配線１４をベース部１１の周部まで延長している点が相違する。ここにおいて、各ばね部１２は、ベース部１１に近づくにつれて幅寸法が徐々に大きくなっている。また、本実施形態のコネクタＡは、相手側コネクタＢの接続端子２３が挿入部１１ａに挿入されていない状態において、各ばね部１２の後面がベース部１１の前面に平行な面内に揃っており、各ばね部１２の上記他端部がベース部１１の前面を含む平面よりも後方に位置している。なお、実施形態１と同様の構成要素には同一の符号を付して説明を省略する。 (Embodiment 5)
The basic configuration of the connector A exemplified as a connection device in the present embodiment is substantially the same as that of the first embodiment, and as shown in FIG. 9, the width dimension along the thickness direction of the base portion 11 in each spring portion 12 is as follows. Compared with the width of the other end opposite to the one end connected to the base 11 continuously and integrally, the width of the one end is set larger, or on the front surface of the base 11. The difference is that the metal wiring 14 electrically connected to each contact portion 13 extends to the peripheral portion of the base portion 11. Here, the width dimension of each spring part 12 gradually increases as it approaches the base part 11. In the connector A of the present embodiment, the rear surface of each spring portion 12 is aligned in a plane parallel to the front surface of the base portion 11 in a state where the connection terminal 23 of the mating connector B is not inserted into the insertion portion 11a. The other end of each spring portion 12 is located behind the plane including the front surface of the base portion 11. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted.

しかして、本実施形態のコネクタＡでは、実施形態１のように各ばね部１２の幅寸法が一定である場合に比べて、ばね部１２が応力の集中する上記一端部付近で破断されるのをより確実に防止することができる。また、本実施形態のコネクタＡでは、各金属配線１４をベース部１１の前面上で引き回す必要があるので、実施形態１に比べてコネクタＡの平面サイズが大きくなってしまうが、実施形態１にて説明した貫通配線１６を形成する工程が不要となり、各金属配線１４の材料をコンタクト部１３と同一材料にすれば、各金属配線１４をコンタクト部１３と同時に形成することができるので、製造プロセスの簡略化を図れる。なお、実施形態１〜４における各ばね部１２を本実施形態におけるばね部１２と同様の形状に形成してもよい。   Thus, in the connector A of the present embodiment, the spring portion 12 is broken near the one end where the stress is concentrated, as compared with the case where the width dimension of each spring portion 12 is constant as in the first embodiment. Can be prevented more reliably. Moreover, in the connector A of this embodiment, since each metal wiring 14 needs to be routed on the front surface of the base part 11, the planar size of the connector A becomes larger than that of the first embodiment. The step of forming the through-wiring 16 described above is not necessary, and if the metal wiring 14 is made of the same material as that of the contact portion 13, each metal wiring 14 can be formed simultaneously with the contact portion 13. Can be simplified. In addition, you may form each spring part 12 in Embodiment 1-4 in the same shape as the spring part 12 in this embodiment.

（実施形態６）
本実施形態において接続装置として例示するコネクタＡの基本構成は実施形態５と略同じであって、図３および図４に示した相手側コネクタＢの接続端子２３が挿入部１１ａに挿入されていない状態において、図１０に示すように、各ばね部１２の前面がベース部１１の前面に平行な面内に揃っている点が相違する。なお、実施形態５と同様の構成要素には同一の符号を付して説明を省略する。 (Embodiment 6)
The basic configuration of the connector A exemplified as a connection device in this embodiment is substantially the same as that of the fifth embodiment, and the connection terminal 23 of the mating connector B shown in FIGS. 3 and 4 is not inserted into the insertion portion 11a. In the state, as shown in FIG. 10, the difference is that the front surface of each spring portion 12 is aligned in a plane parallel to the front surface of the base portion 11. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 5, and description is abbreviate | omitted.

しかして、本実施形態のコネクタＡにおいても、各ばね部１２の幅寸法が一定である場合に比べて、ばね部１２が応力の集中する上記一端部付近で破断されるのをより確実に防止することができる。なお、実施形態１〜４における各ばね部１２を本実施形態におけるばね部１２と同様の形状に形成してもよい。   Therefore, also in the connector A of the present embodiment, it is possible to more reliably prevent the spring portion 12 from being broken near the one end where the stress is concentrated, as compared with the case where the width dimension of each spring portion 12 is constant. can do. In addition, you may form each spring part 12 in Embodiment 1-4 in the same shape as the spring part 12 in this embodiment.

（実施形態７）
本実施形態において接続装置として例示するコネクタＡの基本構成は実施形態５と略同じであって、図１１に示すように、ベース部１１の厚み方向に沿った各ばね部１２の幅寸法が一定であり、各ばね部１２においてベース部１１に連続一体に連結されている一端部とは反対側の他端部が上記一端部に比べて前方に位置している点が相違する。なお、実施形態５と同様の構成要素には同一の符号を付して説明を省略する。 (Embodiment 7)
The basic configuration of the connector A exemplified as the connection device in the present embodiment is substantially the same as that of the fifth embodiment, and the width dimension of each spring portion 12 along the thickness direction of the base portion 11 is constant as shown in FIG. The other end of each spring portion 12 opposite to the one end continuously connected to the base portion 11 is different from that of the one end. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 5, and description is abbreviate | omitted.

しかして、本実施形態のコネクタＡでは、相手側コネクタＢ（図３および図４参照）を接続していない状態において、各ばね部１２の他端部がベース部１１の前方へ突出しているので、実施形態５に比べてベース部１１の厚み寸法を小さくしても、相手側コネクタＢを接続する際のベース部１１の厚み方向への各ばね１２の変位量を確保することができるので、実施形態５に比べて、ベース部１１のより一層の薄型化を図れ、コネクタＡのコンタクト部１３と相手側コネクタＢの接続端子２３とを電気的に接続した状態におけるプリント基板３０（図４参照）とフレキシブル基板４０（図４参照）との間の距離をより短くすることができる。   Therefore, in the connector A of the present embodiment, the other end of each spring portion 12 protrudes forward of the base portion 11 when the mating connector B (see FIGS. 3 and 4) is not connected. Even if the thickness dimension of the base portion 11 is reduced compared to the fifth embodiment, the displacement amount of each spring 12 in the thickness direction of the base portion 11 when connecting the mating connector B can be ensured. Compared with the fifth embodiment, the printed circuit board 30 in a state where the base portion 11 can be made thinner and the contact portion 13 of the connector A and the connection terminal 23 of the mating connector B are electrically connected (see FIG. 4). ) And the flexible substrate 40 (see FIG. 4) can be made shorter.

（実施形態８）
本実施形態において接続装置として例示するコネクタＡの基本構成は実施形態１と略同じであって、図１２に示すように、各ばね部１２における厚み方向の両面１２ｂ，１２ｂそれぞれと後面１２ｃとの間に面取り部１２ｄ，１２ｄが形成されている点が相違するだけである。なお、実施形態１と同様の構成要素には同一の符号を付して説明を省略する。 (Embodiment 8)
The basic configuration of the connector A exemplified as a connection device in the present embodiment is substantially the same as that of the first embodiment, and as shown in FIG. 12, the thickness direction double-sided surfaces 12 b and 12 b and the rear surface 12 c of each spring portion 12. The only difference is that chamfered portions 12d and 12d are formed between them. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted.

しかして、本実施形態のコネクタＡでは、実施形態１に比べて、各ばね部１２の応力集中を緩和することができ、応力集中による各ばね部１２の折損を防止することができる。   Thus, in the connector A of the present embodiment, the stress concentration of each spring portion 12 can be relaxed compared to the first embodiment, and breakage of each spring portion 12 due to the stress concentration can be prevented.

なお、実施形態１〜７においても面取り部１２ｄを設けてもよいことは勿論である。また、各ばね部１２における厚み方向の両面１２ｂ，１２ｂそれぞれと前面との間にも面取り部を形成すれば、各ばね部１２の応力集中がより緩和され、応力集中による各ばね部１２の折損をより確実に防止することができる。   Needless to say, the chamfered portions 12d may also be provided in the first to seventh embodiments. Further, if a chamfered portion is formed between both front surfaces 12b, 12b in the thickness direction of each spring portion 12 and the front surface, the stress concentration of each spring portion 12 is further relaxed, and the breakage of each spring portion 12 due to the stress concentration. Can be prevented more reliably.

上記各実施形態では、接続装置として、回路基板間の電気的な接続に用いるコネクタＡを例示したが、接続装置は、回路基板間の電気的な接続に用いるコネクタに限定するものではなく、接続装置の相手側部材も相手側コネクタＢに限らず、例えば、ＢＧＡやＣＳＰやベアチップなどでもよい。   In each of the above embodiments, the connector A used for electrical connection between circuit boards is illustrated as the connection device. However, the connection device is not limited to the connector used for electrical connection between circuit boards. The counterpart member of the apparatus is not limited to the counterpart connector B, and may be, for example, a BGA, a CSP, a bare chip, or the like.

実施形態１におけるコネクタを示し、（ａ）は概略平面図、（ｂ）は（ａ）のＣ−Ｃ’概略断面図である。The connector in Embodiment 1 is shown, (a) is a schematic plan view, (b) is C-C 'schematic sectional drawing of (a). 同上におけるコネクタを示し、（ａ）はプリント基板に表面実装した状態の概略斜視図、（ｂ）は（ａ）の要部拡大図である。The connector in the same as above is shown, (a) is a schematic perspective view in a state where it is surface-mounted on a printed circuit board, and (b) is an enlarged view of a main part of (a). 同上における相手側コネクタを示し、（ａ）はフレキシブル基板に表面実装した状態の概略斜視図、（ｂ）は（ａ）の要部拡大図である。The other party connector in the same as the above is shown, (a) is a schematic perspective view in a state where it is surface-mounted on a flexible substrate, and (b) is an enlarged view of a main part of (a). 同上の動作説明図である。It is operation | movement explanatory drawing same as the above. 同上におけるコネクタの製造方法を説明するための主要工程断面図である。It is principal process sectional drawing for demonstrating the manufacturing method of the connector in the same as the above. 実施形態２におけるコネクタを示し、（ａ）は概略平面図、（ｂ）は（ａ）のＣ−Ｃ’概略断面図である。The connector in Embodiment 2 is shown, (a) is a schematic plan view, (b) is C-C 'schematic sectional drawing of (a). 実施形態３におけるコネクタを示し、（ａ）は概略平面図、（ｂ）は（ａ）のＣ−Ｃ’概略断面図である。The connector in Embodiment 3 is shown, (a) is a schematic plan view, (b) is C-C 'schematic sectional drawing of (a). 実施形態４におけるコネクタを示し、（ａ）は概略平面図、（ｂ）は（ａ）のＣ−Ｃ’概略断面図である。The connector in Embodiment 4 is shown, (a) is a schematic plan view, (b) is C-C 'schematic sectional drawing of (a). 実施形態５におけるコネクタを示し、（ａ）は概略平面図、（ｂ）は（ａ）のＣ−Ｃ’概略断面図である。The connector in Embodiment 5 is shown, (a) is a schematic plan view, (b) is C-C 'schematic sectional drawing of (a). 実施形態６におけるコネクタを示し、（ａ）は概略平面図、（ｂ）は（ａ）のＣ−Ｃ’概略断面図である。The connector in Embodiment 6 is shown, (a) is a schematic plan view, (b) is C-C 'schematic sectional drawing of (a). 実施形態７におけるコネクタを示し、（ａ）は概略平面図、（ｂ）は（ａ）のＣ−Ｃ’概略断面図である。The connector in Embodiment 7 is shown, (a) is a schematic plan view, (b) is C-C 'schematic sectional drawing of (a). 実施形態８におけるコネクタを示し、（ａ）は概略平面図、（ｂ）は（ａ）のＣ−Ｃ’概略断面図である。The connector in Embodiment 8 is shown, (a) is a schematic plan view, (b) is C-C 'schematic sectional drawing of (a). 従来例を示し、（ａ）は概略平面図、（ｂ）は（ａ）のＣ−Ｃ’断面図である。A prior art example is shown, (a) is a schematic plan view, and (b) is a C-C 'sectional view of (a).

Ａ コネクタ
１１ ベース部
１１ａ 挿入部
１２ ばね部
１３ コンタクト部
１６ 貫通配線
１７ 外部接続電極 A connector 11 base portion 11a insertion portion 12 spring portion 13 contact portion 16 through wiring 17 external connection electrode

Claims (3)

相手側部材の複数の突起状の接続端子それぞれに対応する各部位に接続端子が挿入される孔からなる挿入部が設けられたベース部と、ベース部の各挿入部内に設けられてベース部に一端部が連結されるとともに接続端子の挿入方向に交差する方向に伸縮可能なばね形状に形成された複数のばね部と、相手側部材との対向面となる前面側で各ばね部と挿入部の周部とに跨って積層された導電層を少なくとも有し各ばね部に積層されている部位が接続端子に弾接可能なコンタクト部とを備えてなり、各ばね部は、接続端子の挿入方向に交差する面内で蛇行する形状であり、接続端子の挿入方向に交差する方向に撓み可能となっており、前記一端部とは反対側の他端部が接続端子の挿入方向および挿入方向に交差する方向に変位可能で、複数のばね部は、対向して、接続端子の挿入方向に交差する方向から接続端子を挟むことが可能であり、ベース部とばね部とは、半導体基板を用いて一体に形成されてなることを特徴とする接続装置。 A base portion insertion portion connecting terminals to each part consists of holes that will be inserted is provided corresponding to a plurality of protruding connection terminals of the mating member, the base portion provided in the insertion portion of the base portion A plurality of spring portions formed in a spring shape that is connected to one end and expands and contracts in a direction crossing the insertion direction of the connection terminal, and each spring portion and insertion portion on the front surface side that is a surface facing the counterpart member Each of the spring portions includes a contact portion that can be elastically contacted with the connection terminal, and each spring portion is inserted into the connection terminal. It has a shape that meanders in a plane that intersects the direction, can be bent in a direction that intersects the insertion direction of the connection terminal, and the other end opposite to the one end is the insertion direction and insertion direction of the connection terminal Multiple springs that can be displaced in the direction intersecting Is to face a in the direction intersecting the insertion direction of the connection terminal can sandwich the connecting terminal, and the base portion and the spring portion, characterized by comprising integrally formed by using a semiconductor substrate Connected device. 前記ばね部は、前記各挿入部内に少なくとも３つずつ設けられ、前記挿入部内の複数の前記ばね部は、前記挿入部への前記接続端子の挿入方向に沿った前記挿入部の中心線に対して回転対称となるように形成されてなることを特徴とする請求項１記載の接続装置。   At least three of the spring portions are provided in each insertion portion, and the plurality of spring portions in the insertion portion are in relation to the center line of the insertion portion along the insertion direction of the connection terminal to the insertion portion. The connection device according to claim 1, wherein the connection device is formed so as to be rotationally symmetric. 前記各ばね部は、前記ベース部の厚み方向に沿った幅寸法に関して、前記他端部の幅寸法に比べて前記一端部の幅寸法が大きく設定されてなることを特徴とする請求項１または請求項２記載の接続装置。 Wherein each spring portion is in the width dimension along the thickness direction of the base portion, the width of the one end than the width dimension of the other end, characterized in that formed by larger claim 1 or The connection device according to claim 2 .
JP2005187239A 2005-06-27 2005-06-27 Connection device Expired - Fee Related JP4866025B2 (en)

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