JP4863432B2 - 発光ダイオード及びその製造方法 - Google Patents
発光ダイオード及びその製造方法 Download PDFInfo
- Publication number
- JP4863432B2 JP4863432B2 JP2005052167A JP2005052167A JP4863432B2 JP 4863432 B2 JP4863432 B2 JP 4863432B2 JP 2005052167 A JP2005052167 A JP 2005052167A JP 2005052167 A JP2005052167 A JP 2005052167A JP 4863432 B2 JP4863432 B2 JP 4863432B2
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- JP
- Japan
- Prior art keywords
- light emitting
- emitting diode
- chip
- current
- current limiting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Led Devices (AREA)
- Led Device Packages (AREA)
Description
図6は従来例のチップ型発光ダイオードの断面図であって、600はチップ型発光ダイオード、601は発光ダイオードチップ、622はチップ基板、623、624は電極、625は導電接着層、626は接続ワイヤ、627は樹脂モールド、628、629は半田電極であって、チップ基板622の電極623上に導電接着層625により発光ダイオードチップ601のカソード側を固着導通し、前記チップ基板622の電極624と発光ダイオードチップ601のアノード側を接続ワイヤで導通している。また、電極623と電極624は前記チップ基板622端の半田電極628、629と導通している。
I≒(V−VF)÷R
である。
本発明の目的は、チップ型発光ダイオードの輝度を前記チップ型発光ダイオード個々の電気的特性である電流や順方向電圧に関わりなく一定な輝度特性を有するチップ型発光ダイオードを製造する方法と、実装上も工数と使用部品点数削減ができるチップ型発光ダイオードを提供することにある。
101、601 発光ダイオードチップ
102、402、702、702a、702b、702c 電流制限抵抗
110 輝度調整装置
111 受光装置
112 レーザー装置
113 レーザー照射光
139 定電圧電源
222、522、622 チップ基板
400 電流調整抵抗付きチップ型発光ダイオード
439、839a、839b、839c 定電流電源
530、531 チップ基板522下面に形成した電極
600、601a、601b チップ型発光ダイオード
732 マザーボード
733、734、740 マザーボード配線
901 電圧計
Claims (1)
- 基板上に発光ダイオードチップを搭載し、前記基板と同一面上に設けた配線のための2つ電極の間に前記発光ダイオードチップと直列又は並列に接続する電流制限抵抗を形成した発光ダイオードの製造方法において、前記電流制限抵抗を除いて前記発光ダイオードチップの上を透明もしくは半透明の樹脂でモールドし、前記電極と電極の間にカーボン印刷で樹脂モールドされていない前記電流制限抵抗を形成し、前記発光ダイオードチップと前記電流制限抵抗に定電流を印加して前記発光ダイオードチップの輝度を一定の値になるように前記電流制限抵抗をレーザートリミングで調整するものであって、前記レーザートリミングは、前記電流制限抵抗が初期抵抗値のときは定電圧電源の出力電圧を発光ダイオードチップの規定の電圧より低くして発光ダイオードチップへの過電流を押さえ、トリミングの最終段階で前記規定の電圧となるように前記定電圧電源の出力電圧を調節するようにしたことを特徴とする発光ダイオードの製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005052167A JP4863432B2 (ja) | 2005-02-28 | 2005-02-28 | 発光ダイオード及びその製造方法 |
Applications Claiming Priority (1)
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---|---|---|---|
JP2005052167A JP4863432B2 (ja) | 2005-02-28 | 2005-02-28 | 発光ダイオード及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006237409A JP2006237409A (ja) | 2006-09-07 |
JP4863432B2 true JP4863432B2 (ja) | 2012-01-25 |
Family
ID=37044708
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JP2005052167A Expired - Fee Related JP4863432B2 (ja) | 2005-02-28 | 2005-02-28 | 発光ダイオード及びその製造方法 |
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JP (1) | JP4863432B2 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008091448A (ja) * | 2006-09-29 | 2008-04-17 | Mimaki Denshi Buhin Kk | 光源装置 |
JP5483801B2 (ja) * | 2007-02-28 | 2014-05-07 | コーア株式会社 | 発光部品 |
JP5268267B2 (ja) * | 2007-02-28 | 2013-08-21 | コーア株式会社 | 発光部品およびその製造法 |
WO2008105245A1 (ja) * | 2007-02-28 | 2008-09-04 | Koa Corporation | 発光部品およびその製造法 |
JP5268268B2 (ja) * | 2007-02-28 | 2013-08-21 | コーア株式会社 | 発光部品の製造法 |
JP5429094B2 (ja) * | 2010-07-29 | 2014-02-26 | 日亜化学工業株式会社 | 半導体発光素子用実装基板とその実装基板を用いた半導体発光装置 |
JP2012049385A (ja) * | 2010-08-27 | 2012-03-08 | Seiwa Electric Mfg Co Ltd | 半導体発光素子、発光装置、照明装置、表示装置及び半導体発光素子の製造方法 |
JP2012109493A (ja) * | 2010-11-19 | 2012-06-07 | Seiwa Electric Mfg Co Ltd | 半導体発光素子測定装置 |
KR20120061656A (ko) * | 2010-12-03 | 2012-06-13 | 삼성엘이디 주식회사 | 수납용 트레이, 이를 이용한 검사 장치 및 검사 방법 |
JP2013048163A (ja) * | 2011-08-29 | 2013-03-07 | Seiwa Electric Mfg Co Ltd | 半導体発光素子、発光装置及び半導体発光素子の製造方法 |
US9273995B2 (en) * | 2014-02-04 | 2016-03-01 | Excelitas Technologies Philippines, Inc. | Light emitting diode output power control |
JP7341603B2 (ja) * | 2019-05-29 | 2023-09-11 | Idec株式会社 | 発光装置及び発光装置の製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5429653A (en) * | 1977-08-10 | 1979-03-05 | Tomoegawa Paper Co Ltd | Heat sensitive recording medium |
JPS58209265A (ja) * | 1982-05-31 | 1983-12-06 | Olympus Optical Co Ltd | 発光ダイオ−ドアレイ装置 |
JPS5918454A (ja) * | 1982-07-22 | 1984-01-30 | Yuji Takayama | オンカラムキヤピラリクロマトグラフ用キヤリヤ−ガス制御装置 |
JPS60179057A (ja) * | 1984-02-28 | 1985-09-12 | 雪印乳業株式会社 | 腹腔鏡用受精卵移植三重針 |
JPH0625886B2 (ja) * | 1987-07-07 | 1994-04-06 | キヤノン株式会社 | 画像形成装置 |
JPH0267665A (ja) * | 1988-09-02 | 1990-03-07 | Fujitsu Ltd | インタフェイス回路 |
JP4402336B2 (ja) * | 2002-06-26 | 2010-01-20 | 三菱電機株式会社 | 面状光源装置及びそれを用いた液晶表示装置 |
JP2004235477A (ja) * | 2003-01-30 | 2004-08-19 | Ckd Corp | Ledランプ及びledランプの製造方法 |
JP2004340930A (ja) * | 2003-04-21 | 2004-12-02 | Matsushita Electric Ind Co Ltd | 経路案内提示装置 |
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2005
- 2005-02-28 JP JP2005052167A patent/JP4863432B2/ja not_active Expired - Fee Related
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JP2006237409A (ja) | 2006-09-07 |
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