JP4846754B2 - エッチング装置 - Google Patents
エッチング装置 Download PDFInfo
- Publication number
- JP4846754B2 JP4846754B2 JP2008108252A JP2008108252A JP4846754B2 JP 4846754 B2 JP4846754 B2 JP 4846754B2 JP 2008108252 A JP2008108252 A JP 2008108252A JP 2008108252 A JP2008108252 A JP 2008108252A JP 4846754 B2 JP4846754 B2 JP 4846754B2
- Authority
- JP
- Japan
- Prior art keywords
- mask substrate
- etching
- substrate
- etching solution
- etching apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005530 etching Methods 0.000 title claims description 170
- 239000000758 substrate Substances 0.000 claims description 187
- 230000005484 gravity Effects 0.000 claims description 7
- 239000004063 acid-resistant material Substances 0.000 claims description 6
- 239000004800 polyvinyl chloride Substances 0.000 claims description 6
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims 4
- 239000004810 polytetrafluoroethylene Substances 0.000 claims 4
- -1 polytetrafluoroethylene Polymers 0.000 claims 2
- 239000000243 solution Substances 0.000 description 73
- 238000000034 method Methods 0.000 description 44
- 239000010408 film Substances 0.000 description 36
- 239000010410 layer Substances 0.000 description 34
- 239000000126 substance Substances 0.000 description 21
- 239000007921 spray Substances 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- 238000001039 wet etching Methods 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- 229910001182 Mo alloy Inorganic materials 0.000 description 4
- 239000004809 Teflon Substances 0.000 description 4
- 229920006362 Teflon® Polymers 0.000 description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000008155 medical solution Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Robotics (AREA)
- Weting (AREA)
- Electroluminescent Light Sources (AREA)
Description
図3を参照すると、配管部14の下部に接続された複数のノズル15から噴射されたエッチング液16が上部マスク基板13aと下部マスク基板13bとで構成されたマスク基板13に噴射される。
11 移送手段
12 基板
13 マスク基板
14 配管部
15 ノズル
16 エッチング液
20 薬液槽
22 ポンプ
110 半導体層
110a、110b ソース/ドレイン領域
110c チャンネル領域
120 ゲート絶縁膜
130 ゲート電極
140 層間絶縁膜
150a、150b ソース/ドレイン電極
160 保護膜
170 平坦化膜
180 画素電極
190 画素定義膜
200 有機膜層
210 対向電極
Claims (9)
- エッチングチャンバと、
前記エッチングチャンバ内部の上側に位置し、エッチング液を噴射する複数のノズルを有する配管部と、
前記配管部の下側に位置するマスク基板と、
前記マスク基板の下側に位置し、基板を移送する移送手段と、
を含み、
前記複数のノズルから噴射されたエッチング液が前記マスク基板上に広がり、該エッチング液が重力によって前記基板上に落下し、
前記マスク基板は、メッシュ状であるか、又は複数のホールまたはスリットを有する形態であることを特徴とするエッチング装置。 - 前記マスク基板は、耐酸性材質で形成することを特徴とする請求項1に記載のエッチング装置。
- 前記マスク基板は、ポリ塩化ビニル(PVC)またはポリテトラフルオロエチレン(polytetrafluouroethylene:PTFE)で形成されていることを特徴とする請求項2に記載のエッチング装置。
- 前記マスク基板は、互いに接触しない複数の積層構造であることを特徴とする請求項1に記載のエッチング装置。
- エッチングチャンバと、
前記エッチングチャンバ内部の上側に位置し、エッチング液を噴射する複数のノズルを有する配管部と、
前記配管部の下側に位置するマスク基板と、
前記マスク基板の側面に位置し、固定部により前記マスク基板を支持するリフト装置と、
前記マスク基板の下側に位置し、基板を移送する移送手段と、
を含み、
前記マスク基板は、メッシュ状であるか、又は複数のホールまたはスリットを有する形態であることを特徴とするエッチング装置。 - 前記マスク基板は、耐酸性材質で形成することを特徴とする請求項5に記載のエッチング装置。
- 前記マスク基板は、ポリ塩化ビニル(PVC)またはポリテトラフルオロエチレン(polytetrafluouroethylene:PTFE)で形成されていることを特徴とする請求項6に記載のエッチング装置。
- 前記マスク基板は、互いに接触しない複数の積層構造であることを特徴とする請求項5に記載のエッチング装置。
- 前記リフト装置は、前記マスク基板を上下移動することを特徴とする請求項5に記載のエッチング装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2007-0072200 | 2007-07-19 | ||
KR1020070072200A KR100882910B1 (ko) | 2007-07-19 | 2007-07-19 | 식각장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009027137A JP2009027137A (ja) | 2009-02-05 |
JP4846754B2 true JP4846754B2 (ja) | 2011-12-28 |
Family
ID=40263867
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008108252A Active JP4846754B2 (ja) | 2007-07-19 | 2008-04-17 | エッチング装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8206549B2 (ja) |
JP (1) | JP4846754B2 (ja) |
KR (1) | KR100882910B1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE202006018111U1 (de) * | 2006-07-25 | 2007-02-08 | Lang, Marcus | Vorrichtung zum beschleunigten nasschemischen Behandeln von Oberflächen |
KR101091475B1 (ko) * | 2009-06-30 | 2011-12-07 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
DE102009051847A1 (de) * | 2009-10-29 | 2011-05-19 | Gebr. Schmid Gmbh & Co. | Verfahren und Vorrichtung zur Behandlung einer Substratoberlfäche eines Substrats |
CN102256447B (zh) * | 2010-05-20 | 2013-08-07 | 富葵精密组件(深圳)有限公司 | 蚀刻装置及蚀刻电路板的方法 |
US9318358B2 (en) * | 2011-04-28 | 2016-04-19 | Infineon Technologies Ag | Etching device and a method for etching a material of a workpiece |
US10269557B2 (en) | 2015-10-20 | 2019-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus of processing semiconductor substrate |
CN107306478A (zh) * | 2016-04-18 | 2017-10-31 | 盟立自动化股份有限公司 | 湿式蚀刻装置 |
CN107316825A (zh) * | 2016-04-27 | 2017-11-03 | 盟立自动化股份有限公司 | 湿式蚀刻装置 |
JP6536830B2 (ja) * | 2016-08-30 | 2019-07-03 | 株式会社Nsc | スプレイエッチング装置 |
KR102042652B1 (ko) * | 2017-02-06 | 2019-11-08 | 단국대학교 천안캠퍼스 산학협력단 | 3차원 표면 구조를 가지는 태양전지의 보호막 형성방법 |
JP7190892B2 (ja) * | 2018-12-12 | 2022-12-16 | 東京エレクトロン株式会社 | 基板処理装置および処理液濃縮方法 |
CN110634773B (zh) * | 2019-08-29 | 2022-04-01 | 武汉华星光电半导体显示技术有限公司 | 湿法刻蚀设备及其控制方法、存储介质 |
CN116744567B (zh) * | 2023-06-21 | 2023-12-29 | 乐清市力诺机车部件有限公司 | 一种电动车开关集成电路板制备机及方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6166938A (ja) * | 1984-09-10 | 1986-04-05 | Bridgestone Corp | 押付け力測定方法 |
JPS6166938U (ja) | 1984-10-09 | 1986-05-08 | ||
JPS61104543A (ja) * | 1984-10-26 | 1986-05-22 | Denki Onkyo Co Ltd | 偏向ヨ−ク |
JPH0539579A (ja) * | 1991-08-02 | 1993-02-19 | Mitsubishi Electric Corp | 無電解めつき装置 |
JPH06177093A (ja) | 1992-12-07 | 1994-06-24 | Matsushita Electric Ind Co Ltd | 半導体製造装置 |
JP3595606B2 (ja) | 1995-04-25 | 2004-12-02 | 大日本スクリーン製造株式会社 | 基板表面処理装置 |
KR100580873B1 (ko) | 1999-06-17 | 2006-05-16 | 엘지.필립스 엘시디 주식회사 | 식각장치 |
JP3706770B2 (ja) | 1999-06-28 | 2005-10-19 | 大日本スクリーン製造株式会社 | 基板メッキ装置 |
JP4130352B2 (ja) * | 2002-03-29 | 2008-08-06 | Dowaホールディングス株式会社 | ベース一体型の金属セラミックス接合部材の湿式処理方法、および当該湿式処理方法により製造されたパワーモジュール用部材並びにパワーモジュール |
JP2004211112A (ja) * | 2002-12-26 | 2004-07-29 | Canon Inc | 基体処理装置 |
JP4323930B2 (ja) * | 2003-11-18 | 2009-09-02 | キヤノン株式会社 | 薬液処理方法 |
KR20050015448A (ko) * | 2003-08-06 | 2005-02-21 | 삼성전자주식회사 | 습식식각장치 |
JP2005232494A (ja) * | 2004-02-17 | 2005-09-02 | Tokyo Kakoki Kk | 基板材の表面処理装置 |
-
2007
- 2007-07-19 KR KR1020070072200A patent/KR100882910B1/ko active IP Right Grant
-
2008
- 2008-04-17 JP JP2008108252A patent/JP4846754B2/ja active Active
- 2008-05-21 US US12/153,609 patent/US8206549B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR20090008878A (ko) | 2009-01-22 |
KR100882910B1 (ko) | 2009-02-10 |
US20090020226A1 (en) | 2009-01-22 |
JP2009027137A (ja) | 2009-02-05 |
US8206549B2 (en) | 2012-06-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4846754B2 (ja) | エッチング装置 | |
JP5288639B2 (ja) | 半導体装置の作製方法 | |
US7183146B2 (en) | Method of manufacturing semiconductor device | |
KR20110126750A (ko) | 레지스트 패턴의 형성방법 및 반도체 장치의 제작방법 | |
KR20140065375A (ko) | 유기 발광 다이오드를 캡슐화하기 위한 방법 | |
KR102132882B1 (ko) | 박막트랜지스터 기판, 이를 구비하는 유기 발광 장치, 박막트랜지스터 기판 제조방법 및 유기 발광 장치 제조방법 | |
WO2013102372A1 (zh) | 阵列基板及其制造方法和显示装置 | |
JP4741192B2 (ja) | 半導体装置の作製方法 | |
US9496321B2 (en) | Organic light emitting display and method of manufacturing the same | |
JP2007220918A (ja) | レーザアニール方法、薄膜半導体装置及びその製造方法、並びに表示装置及びその製造方法 | |
US20130023179A1 (en) | Donor substrate, method of manufacturing a donor substrate and a method of manufacturing an organic light emitting display device using a donor substrate | |
US10796933B2 (en) | Display device manufacturing apparatus and method | |
JP4656843B2 (ja) | 半導体装置の作製方法 | |
KR100848342B1 (ko) | 유기 전계 발광표시장치 제조방법 | |
US8343786B2 (en) | Organic light emitting diode display and manufacturing method thereof | |
KR20150044451A (ko) | 유기전계 발광소자 및 이의 제조 방법 | |
KR20180089607A (ko) | 증착용 마스크의 제조 방법 | |
US7629738B2 (en) | Organic electroluminescence display device providing uniformity of color coordinates by controlling inorganic layer thickness deviation | |
JP2010282125A (ja) | アクティブマトリクス基板およびその製造方法 | |
KR20080048734A (ko) | 박막 트랜지스터의 제조방법 | |
KR20230168652A (ko) | 표시 장치의 제조 장치 및 표시 장치의 제조 방법 | |
KR100683664B1 (ko) | 박막 트랜지스터, 박막 트랜지스터를 제조하는 방법 및이를 구비한 평판 디스플레이 소자 | |
JP2013135076A (ja) | 薄膜トランジスタ基板の製造方法 | |
JP2010037586A (ja) | 成膜用精密マスク、膜の形成方法、微細配線の形成方法、電気光学装置の製造方法 | |
JP2014229398A (ja) | 有機el表示装置の製造方法及び製造装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20081208 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090225 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110120 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110125 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110425 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110913 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20111012 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20141021 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4846754 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20141021 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20141021 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |