JP4811027B2 - Polishing equipment - Google Patents

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JP4811027B2
JP4811027B2 JP2006013210A JP2006013210A JP4811027B2 JP 4811027 B2 JP4811027 B2 JP 4811027B2 JP 2006013210 A JP2006013210 A JP 2006013210A JP 2006013210 A JP2006013210 A JP 2006013210A JP 4811027 B2 JP4811027 B2 JP 4811027B2
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polishing
sample
film thickness
head
measuring device
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JP2007190660A (en
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一寿 山崎
康捻 小▲高▼
武志 添田
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Fujitsu Ltd
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本発明は薄片試料、例えば透過型電子顕微鏡の試料を作製するための研摩装置に関し、とくに優れた平行度を有する薄片試料を作製することができる３点支持方式の研摩装置に関する。   The present invention relates to a polishing apparatus for preparing a thin piece sample, for example, a sample of a transmission electron microscope, and particularly to a three-point support type polishing apparatus capable of producing a thin piece sample having excellent parallelism.

透過型電子顕微鏡、２次イオン質量分析装置あるいは原子間力顕微鏡等の試料には、平行度が高くかつ厚さが０．１〜５．０μｍの極めて薄い薄片試料が要求される。かかる極薄の薄片試料は、従来、遊動式あるいは３点支持方式の研摩装置を用いた研摩により作製されている。   A sample such as a transmission electron microscope, a secondary ion mass spectrometer, or an atomic force microscope is required to be an extremely thin thin sample having a high parallelism and a thickness of 0.1 to 5.0 μm. Such an ultrathin slice sample is conventionally produced by polishing using a floating type or a three-point support type polishing apparatus.

誘導式研摩装置は、研摩ヘッドの下面に研摩試料を貼着し、この研摩ヘッドを回転する研摩定盤上に載置し遊動させることで研摩試料の平行度を保持しつつ研摩する。しかし、この誘導式研摩装置では、研摩ヘッド下面と研摩定盤上面の平行度を機械的に調整する手段を有していない。その結果、研摩ヘッドへ研摩試料を傾斜して貼付けたり、研摩定盤の凹凸に起因して研摩面が傾斜した場合に、この傾斜を補正することができない。このため、試料の平行度が劣化し作製歩留りが低下してしまう。   In the induction type polishing apparatus, a polishing sample is adhered to the lower surface of the polishing head, and the polishing head is mounted on a rotating polishing platen and moved freely, and polishing is performed while maintaining the parallelism of the polishing sample. However, this induction polishing apparatus does not have means for mechanically adjusting the parallelism between the lower surface of the polishing head and the upper surface of the polishing surface plate. As a result, when the polishing sample is attached to the polishing head with an inclination or when the polishing surface is inclined due to the unevenness of the polishing surface plate, the inclination cannot be corrected. For this reason, the parallelism of the sample deteriorates and the production yield decreases.

３点支持方式の研摩装置は、研摩ヘッド下面と研摩定盤上面との傾斜を機械的に調整する機構を有する。このため、研摩試料の研摩面が研摩ヘッド下面に対して傾いた場合でも、傾斜方向と傾斜角を測定して機械的に修正することができる。従って、試料の作製歩留りが向上する。   The three-point support type polishing apparatus has a mechanism for mechanically adjusting the inclination between the lower surface of the polishing head and the upper surface of the polishing surface plate. For this reason, even when the polishing surface of the polishing sample is inclined with respect to the lower surface of the polishing head, the inclination direction and the inclination angle can be measured and mechanically corrected. Accordingly, the production yield of the sample is improved.

しかし、従来の３点支持方式の研摩装置では、研摩面の傾斜方向及び傾斜角を測定するために、一旦研摩を中断し、研摩試料を貼付した研摩ヘッドを膜厚測定装置に装着して研摩試料の膜厚を測定しなければならない。そして、研摩試料が平行平板になるように３点支持の各支持点の高さを調整する。   However, in the conventional three-point support type polishing apparatus, in order to measure the inclination direction and the inclination angle of the polishing surface, the polishing is temporarily interrupted, and the polishing head with the polishing sample attached is attached to the film thickness measurement apparatus. The film thickness of the sample must be measured. And the height of each support point of a three-point support is adjusted so that a polishing sample may become a parallel plate.

このような３点支持点の調整は、研摩試料の厚みの他、支持点と研摩試料との位置関係をも考慮してなさねばならない。さらに、研摩の中断中に研摩定盤及び研摩ヘッドが変形するので、これらをも考慮しなければならない。このため、３点支持点の調整には非常に高度なスキルが要求される。また、調整のために多大の時間を必要とする。   Such adjustment of the three-point support point must take into account the positional relationship between the support point and the polishing sample in addition to the thickness of the polishing sample. Furthermore, since the polishing surface plate and the polishing head are deformed during polishing interruption, these must be taken into consideration. For this reason, a very advanced skill is required to adjust the three-point support point. Also, a great deal of time is required for adjustment.

研摩試料の厚みを研摩中に自動的に測定することができる、電子顕微鏡の試料作製用の研摩装置が開発されている。（例えば特許文献１を参照。）。   A polishing apparatus for electron microscope sample preparation has been developed that can automatically measure the thickness of a polished sample during polishing. (For example, refer to Patent Document 1).

この研摩装置は、研摩ヘッドの裏面（上面）に測長用のレーザ光を照射し、その反射光との干渉により研摩ヘッドの変位を検出することで、研摩試料の厚さを算出する。しかし、この装置は研摩試料の傾斜を測定することができず又傾斜の修正機構もないので、研摩面が傾斜した研摩試料、即ちくさび形に研摩された研摩試料を平行平板になるように修正することができない。   This polishing apparatus calculates the thickness of the polishing sample by irradiating the back surface (upper surface) of the polishing head with a laser beam for length measurement and detecting the displacement of the polishing head by interference with the reflected light. However, since this device cannot measure the inclination of the polished sample and there is no mechanism for correcting the inclination, the polished sample whose polishing surface is inclined, that is, a polished sample polished in a wedge shape, is corrected to be parallel plates. Can not do it.

シリコンウエーハの研摩装置には、ウエーハ表面の薄膜の膜厚分布を測定し、その測定結果に基づき研摩圧の分布を変更することで薄膜の膜厚分布を修正するものが考案されている。（例えば特許文献２を参照。）。   A silicon wafer polishing apparatus has been devised that measures the film thickness distribution of the thin film on the wafer surface and modifies the film thickness distribution of the thin film by changing the distribution of the polishing pressure based on the measurement result. (For example, refer to Patent Document 2).

この研摩装置は、研摩ヘッドに貼付されたウエーハを回転定盤上に押圧して研摩し、薄膜の膜厚分布に応じて研摩圧分布を制御する。しかし、遊動式研摩装置と同様に研摩面の傾斜を修正する機構を有していない。このため、厚いウエーハ表面に形成された薄膜の膜圧分布を修正することができても、研摩試料を精密に平行平板に研摩することはできない。
特開１１−１９４０７８号公報 特開２００５−１１９７７号公報 In this polishing apparatus, a wafer affixed to a polishing head is pressed onto a rotating platen for polishing, and the polishing pressure distribution is controlled according to the film thickness distribution of the thin film. However, it does not have a mechanism for correcting the inclination of the polishing surface, like the floating polishing apparatus. For this reason, even if the film pressure distribution of the thin film formed on the surface of the thick wafer can be corrected, the polished sample cannot be precisely polished to a parallel plate.
JP 11-194078 A Japanese Patent Laid-Open No. 2005-11977

上述したように、研摩ヘッドに研摩試料を貼付して研摩し、薄い平行平板からなる試料を作成する研摩装置として、従来用いられていた遊動式又は３点支持式の研摩装置では、研摩面の傾斜の修正ができない、あるいは修正が非常に難しく高度のスキルが必要とされるため、容易には精密な平行平板からなる薄片試料を作成することができないという問題があった。とくに、研摩試料の膜厚又は膜厚分布を測定するために研摩を中断しなければならず、この間に研摩定盤の変形が生ずることが修正をより困難にしている。   As described above, as a polishing apparatus for attaching a polishing sample to a polishing head and polishing it to create a sample consisting of a thin parallel plate, in a conventionally used floating type or three-point support type polishing apparatus, Inclination cannot be corrected, or correction is very difficult and requires a high level of skill. Therefore, there has been a problem that it is not possible to easily produce a thin sample consisting of a precise parallel plate. In particular, polishing must be interrupted in order to measure the film thickness or film thickness distribution of the polished sample, and the deformation of the polishing platen during this time makes correction more difficult.

また、研摩中に試料の厚さを測定する従来の研摩装置は、試料の傾斜を測定ないし修正する手段を有しておらず、精密な平行平板の試料を作成することは難しい。   Further, a conventional polishing apparatus that measures the thickness of a sample during polishing does not have a means for measuring or correcting the inclination of the sample, and it is difficult to produce a precise parallel plate sample.

さらに、研摩圧力分布を調整することでウエーハ表面に形成された薄膜の膜厚分布を修正する従来のシリコンウエーハの研摩装置では、研摩面ヘッドの傾斜を修正する機構を有しておらず研摩試料の平行度を修正することはできない。このため、高い平行度を有する平行平板の薄片試料を作成することは難しい。   Further, the conventional silicon wafer polishing apparatus that corrects the film thickness distribution of the thin film formed on the wafer surface by adjusting the polishing pressure distribution does not have a mechanism for correcting the inclination of the polishing surface head, and is a polishing sample. The parallelism of cannot be corrected. For this reason, it is difficult to prepare a thin sample of a parallel plate having high parallelism.

本発明は、高い平行度を有する研摩試料を作成することができる 3点支持方式の研摩装置の調整を、研摩を中断することなく自動的に行うことができる研摩装置を提供することを目的としている。   An object of the present invention is to provide a polishing apparatus capable of automatically adjusting a three-point support type polishing apparatus capable of preparing a polishing sample having high parallelism without interrupting polishing. Yes.

上述した課題を解決するために、本発明の第１構成の研摩装置では、研摩ヘッドと研摩定盤の間隔を制御する（例えば２個の）アクチュエータ付きマイクロメータが研摩ヘッドに固定されている。また、研摩試料の板厚を（例えば３カ所で測定する３個の）膜厚測定器が研摩ヘッドに固定されている。さらに、研摩中に、膜厚測定器から出力された測定値に基づき研摩試料の板厚分布を算出し、研摩試料が平行平板になるようにアクチュエータを制御する制御装置を備える。この制御装置は、研摩試料上に位置する１個の膜厚測定器、及び２個のマイクロメータの３つの位置を３点支持の支持点と見做して制御する。   In order to solve the above-described problem, in the polishing apparatus of the first configuration of the present invention, (for example, two) micrometers with an actuator for controlling the distance between the polishing head and the polishing surface plate are fixed to the polishing head. Further, a film thickness measuring device (for example, three measuring thicknesses measured at three positions) of the polishing sample is fixed to the polishing head. Furthermore, a control device is provided that calculates the plate thickness distribution of the polished sample based on the measurement value output from the film thickness measuring device during polishing and controls the actuator so that the polished sample becomes a parallel plate. This control device controls the three positions of one film thickness measuring device and two micrometers located on the polished sample as three-point support points.

本第１構成の研摩装置では、研摩中に研摩試料の板厚の傾斜（非平行度）を測定して、研摩ヘッドと研摩定盤間の間隔を２点で調整し、研摩試料の板厚が平行平板になるように制御する。このため研摩中に自動的に平行度が制御されて研摩が進行するので、高精度の平行平板の試料が作成される。   In the polishing apparatus of this first configuration, the thickness (non-parallelism) of the thickness of the polishing sample is measured during polishing, and the distance between the polishing head and the polishing platen is adjusted at two points, and the thickness of the polishing sample is measured. Is controlled to be a parallel plate. For this reason, the degree of parallelism is automatically controlled during the polishing and the polishing proceeds, so that a highly accurate parallel plate sample is prepared.

本発明の第１構成の研摩装置では、さらに、研摩ヘッドと研摩定盤の間隔を測定する２個の間隔測定器を有する。この間隔測定器の下には、間隔を正確に測定するために、研摩試料は配置されない。 In the first configuration of the polishing apparatus of the present invention, further, having two spacing measuring device for measuring the distance between the polishing head polishing platen. Under this distance measuring device, no abrasive sample is placed in order to accurately measure the distance.

この第１構成では、間隔測定器で測定された２点の間隔から、研摩試料の板厚を測定することができる。この板厚の測定は研摩中に自動的になされるから、本第１構成によれば、厚さが精密に制御された平行平板試料が自動的に作成される。 In this 1st structure, the plate | board thickness of a polishing sample can be measured from the space | interval of 2 points | pieces measured with the space | interval measuring device. Since the measurement of the plate thickness is automatically performed during polishing, according to the first configuration, a parallel plate sample whose thickness is precisely controlled is automatically created.

本発明の研摩装置によれば、３点支持方式の研摩装置の調整を、研摩中に研摩試料の膜厚分布を測定しその測定結果に基づき自動的に行うから、研摩を中断することなく自動的に研摩試料の平行度が修正されるので、高精度の平行平板の試料を容易に作成することができる。   According to the polishing apparatus of the present invention, adjustment of the three-point support type polishing apparatus is automatically performed based on the measurement result of the film thickness distribution of the polishing sample during polishing, so that the polishing is not interrupted automatically. Therefore, since the parallelism of the polished sample is corrected, a highly accurate parallel plate sample can be easily prepared.

本発明の第１実施形態は、電子顕微鏡用の厚さ０．１μｍ〜５．０μｍの試料を作成するための研摩装置に関する。   1st Embodiment of this invention is related with the polishing apparatus for producing the sample of thickness 0.1 micrometer-5.0 micrometers for electron microscopes.

図１は本発明の第１実施形態の断面図であり、研摩装置の主要な構成を表している。   FIG. 1 is a cross-sectional view of a first embodiment of the present invention, showing the main configuration of the polishing apparatus.

図１を参照して、研摩装置はベッド１上に回転自在に設けられ、水平面内で回転駆動される研摩定盤８を備える。この研摩定盤８は、例えば樹脂、錫等の軟質の金属、あるいは表面に研摩パッドが貼着された金属板からなり、上面にスラリー供給器１１から研摩用スラリー１４が供給される。   Referring to FIG. 1, the polishing apparatus includes a polishing surface plate 8 that is rotatably provided on a bed 1 and is driven to rotate in a horizontal plane. The polishing surface plate 8 is made of, for example, a soft metal such as resin or tin, or a metal plate having a polishing pad attached to the surface thereof, and the polishing slurry 14 is supplied from the slurry supplier 11 to the upper surface.

研摩試料１０は、まず片面を平面に研摩し、その後、研摩面を研摩ヘッド２の下面に接着材、例えばワックスやバルサムで接着する。研摩試料１０の大きさは、たとえば一片の長さが３ｍｍ〜１０ｍｍの矩形である。次いで、粗い遊離砥粒子を用いたラッピングにより例えば５０μｍ程度の平行平板に加工される。次いで、研摩試料１０が貼付された研摩ヘッド２を研摩定盤上に載置し、研摩用のスラリー１４を研摩定盤８上に供給して研摩試料を例えば仕上げ板厚０．２μまで研摩する。   The polishing sample 10 is first polished on one side to a flat surface, and then the polishing surface is bonded to the lower surface of the polishing head 2 with an adhesive such as wax or balsam. The size of the polishing sample 10 is, for example, a rectangle having a length of 3 mm to 10 mm. Subsequently, it is processed into a parallel plate of about 50 μm, for example, by lapping using coarse loose abrasive particles. Next, the polishing head 2 to which the polishing sample 10 is affixed is placed on a polishing platen, and a polishing slurry 14 is supplied onto the polishing platen 8 to polish the polishing sample to a final plate thickness of 0.2 μm, for example. .

研摩ヘッド２の上面には、研摩ヘッド２上面を支持具５が載置される。この支持具５は、下面に窪みを有し、この窪みに研摩ヘッド２の上面から突出する膜厚測定器３ａ〜３ｃ及び制御装置１２の上部を収容する。なお膜厚測定器３ａ〜３ｃ及び制御装置１２の上部が、研摩パッド２の内部に収容し、支持具５の下面を平面にしてもよい。支持具５の上部は円柱からなり、この円柱は、ベッド１に垂直に固定された支柱により水平に保持されたアーム７に開設された貫通孔に嵌挿されて支持部５を垂直に支持する。   On the upper surface of the polishing head 2, the support 5 is placed on the upper surface of the polishing head 2. The support 5 has a depression on the lower surface, and accommodates the film thickness measuring devices 3 a to 3 c protruding from the upper surface of the polishing head 2 and the upper part of the control device 12 in the depression. The upper portions of the film thickness measuring devices 3a to 3c and the control device 12 may be accommodated in the polishing pad 2 and the lower surface of the support 5 may be flat. The upper part of the support 5 is made of a cylinder, and this cylinder is inserted into a through-hole formed in the arm 7 held horizontally by a support column fixed vertically to the bed 1 to support the support part 5 vertically. .

ウエイト６は、中央に貫通孔を有し、この貫通孔に支持具５の円柱を緩挿させて支持具５の下部上面に置かれ、研摩ヘッド２に研摩加重を印加する。なお、アーム７は支柱９に垂直軸廻りに回動自在にかつ上下に移動可能に保持される。   The weight 6 has a through hole in the center, and a cylinder of the support tool 5 is loosely inserted into the through hole, and is placed on the lower upper surface of the support tool 5, and an abrasive load is applied to the polishing head 2. The arm 7 is held by the support column 9 so as to be rotatable about a vertical axis and movable up and down.

図２は本発明の第１実施形態の研摩ヘッドの平面図であり、図１に示した研摩ヘッド２を下方から（図１の紙面の下側から）見た形状を表している。図３は本発明の第１実施形態の研摩ヘッドの断面図であり、図１中の直線ＡＢに沿う断面構造を表している。また、図４は本発明の第１実施形態の研摩ヘッドのＣＤ断面図であり、図１中の直線ＣＤに沿う断面構造を表している。   FIG. 2 is a plan view of the polishing head according to the first embodiment of the present invention, and shows the shape of the polishing head 2 shown in FIG. 1 as viewed from below (from the lower side of the drawing in FIG. 1). FIG. 3 is a cross-sectional view of the polishing head according to the first embodiment of the present invention, and shows a cross-sectional structure taken along the line AB in FIG. FIG. 4 is a CD sectional view of the polishing head according to the first embodiment of the present invention, and shows a sectional structure along a straight line CD in FIG.

図２及び図３を参照して、研摩ヘッド２の下面の周辺近傍に、第１膜厚測定器３ａ及びアクチュエータ４ａが、第１膜厚測定器３を頂点とする２等辺三角形の各頂点にそれぞれ配置されている。さらに、研摩試料１０が固定される領域内に第２及び第３膜厚測定器３ｂ、３ｃが配置されている。   2 and 3, near the periphery of the lower surface of the polishing head 2, the first film thickness measuring device 3a and the actuator 4a are placed at the vertices of an isosceles triangle having the first film thickness measuring device 3 as a vertex. Each is arranged. Further, second and third film thickness measuring devices 3b and 3c are arranged in a region where the polished sample 10 is fixed.

これら第１〜第３膜厚測定器３ａ〜３ｃは、図３を参照して、研摩ヘッド２に形成された貫通孔の中に、下端が研摩ヘッド２の下面と同一面をなすようにあるいは研摩ヘッド２の下面より僅か窪む面をなすように設けられる。   These first to third film thickness measuring devices 3a to 3c are configured so that the lower end thereof is flush with the lower surface of the polishing head 2 in the through-hole formed in the polishing head 2 with reference to FIG. It is provided so as to form a surface slightly recessed from the lower surface of the polishing head 2.

アクチュエータ４ａは、マイクロメータ４のスピンドル４ｂの先端部分を構成する。このマイクロメータ４ａはそのスリーブが研摩ヘッド２に固定されている。アクチュエータ４ａの先端は、研摩ヘッド２の下面から突出して研摩定盤に当接し、これにより研摩ヘッド２と研摩定盤８間の間隔が規定される。即ち、マイクロメータ４ａのシンブルを回転することでスピンドルの垂直移動を介してアクチュエータの先端が移動し、研摩ヘッド２と研摩定盤８間の間隔を調整することができる。さらに、アクチュエータ４ａを電気的に駆動することで、この間隔がさらに精密に制御される。このマクチュエータ４ａは先端の微小な移動を電気的に制御できるものであればとくに制限されず、例えば、ピエゾ素子、ステッピングモータで駆動するアクチュエータを用いることができる。   The actuator 4 a constitutes the tip portion of the spindle 4 b of the micrometer 4. The sleeve of the micrometer 4 a is fixed to the polishing head 2. The tip of the actuator 4a protrudes from the lower surface of the polishing head 2 and comes into contact with the polishing platen, whereby the distance between the polishing head 2 and the polishing platen 8 is defined. That is, by rotating the thimble of the micrometer 4a, the tip of the actuator moves through the vertical movement of the spindle, and the distance between the polishing head 2 and the polishing platen 8 can be adjusted. Furthermore, this distance is controlled more precisely by electrically driving the actuator 4a. The actuator 4a is not particularly limited as long as the minute movement of the tip can be electrically controlled. For example, an actuator driven by a piezo element or a stepping motor can be used.

さらに、２個のアクチュエータ４ａの近傍にそれぞれ間隔測定器１３を配置する。この間隔測定器は、研摩ヘッド２と研摩定盤８の間隔を測定できるものでありばよく、例えば膜厚測定器３ａ〜３ｃと同様のものを研摩ヘッドへ同様に設置してもよい。また、接触式の機械的な測長器を用いてもよい。   Further, the distance measuring devices 13 are arranged in the vicinity of the two actuators 4a. This interval measuring device is only required to be able to measure the interval between the polishing head 2 and the polishing surface plate 8, and for example, the same devices as the film thickness measuring devices 3a to 3c may be similarly installed on the polishing head. Further, a contact type mechanical length measuring device may be used.

研摩試料１０は、研摩ヘッド２の周縁近傍に配設された膜厚測定器３ａ〜３ｃの直下の研摩ヘッド２の下面に、ワックス又はバルサム等の接着剤を用いて貼付される。   The polishing sample 10 is affixed to the lower surface of the polishing head 2 directly below the film thickness measuring devices 3a to 3c disposed near the periphery of the polishing head 2 using an adhesive such as wax or balsam.

上述した第２及び第３膜厚測定器、及び間隔測定器１３は、第１膜厚測定器３ａとアクチュエータ４ａを結ぶ直線ＣＤ、ＥＦ上に配置することが好ましい。この配置では、図４を参照して、研摩試料１０の板厚を測定する２個の膜厚測定器３ａ、３ｂと、研摩ヘッド２と研摩定盤間の間隔を測定する間隔測定器１３と、研摩ヘッド２と研摩定盤間の間隔を定めるアクチュエータ４ａとが、同一直線ＣＤ上に配置されるので、これらの測定値とアクチュエータの制御量との関係が簡潔になり制御が容易になる。   The second and third film thickness measuring instruments and the distance measuring instrument 13 described above are preferably arranged on the straight lines CD and EF connecting the first film thickness measuring instrument 3a and the actuator 4a. In this arrangement, referring to FIG. 4, two film thickness measuring devices 3a and 3b for measuring the plate thickness of the polishing sample 10, and a distance measuring device 13 for measuring the distance between the polishing head 2 and the polishing platen. The actuator 4a that determines the distance between the polishing head 2 and the polishing platen is disposed on the same straight line CD, so that the relationship between these measured values and the control amount of the actuator is simplified and control is facilitated.

以下、第１実施形態の研摩装置の動作について説明する。   Hereinafter, the operation of the polishing apparatus of the first embodiment will be described.

第１〜第３膜厚測定器３ａ〜３ｃは、それぞれ直下の研摩試料１０の板厚を測定する。測定には、例えば電磁誘導の膜厚依存性を利用したループ式の膜厚測定器、光の干渉等を利用した光学式の膜厚測定器、あるいは静電容量の変化を利用した静電式の膜厚測定器を用いることができる。制御装置１２は、まず、３個の膜厚測定器３ａ〜３ｃの測定結果に基づき、研摩試料の板厚及び板厚分布（即ち、平行度と傾斜方向）を算出する。   The first to third film thickness measuring instruments 3a to 3c each measure the thickness of the polishing sample 10 immediately below. For the measurement, for example, a loop-type film thickness measuring device using film thickness dependence of electromagnetic induction, an optical film thickness measuring device using light interference, or an electrostatic method using capacitance change The film thickness measuring instrument can be used. First, the control device 12 calculates the plate thickness and plate thickness distribution (that is, the parallelism and the inclination direction) of the polished sample based on the measurement results of the three film thickness measuring devices 3a to 3c.

次いで、その板厚分布の測定結果に基づき、研摩試料が平行平板となるように、間隔測定器１３及びアクチュエータ４ａの設置位置での研摩ヘッド２と研摩定盤８間の間隔の修正量を算出する。さらに、間隔測定器１３の測定値を基準として研摩試料１０の板厚、即ち第１〜第３膜厚測定器３ａ〜３ｃの測定値を校正する。これらの修正及び校正により、研摩試料１０の平行度及び板厚を精密に検出することができる。   Next, based on the measurement result of the plate thickness distribution, the correction amount of the interval between the polishing head 2 and the polishing platen 8 at the installation position of the interval measuring device 13 and the actuator 4a is calculated so that the polishing sample becomes a parallel plate. To do. Further, the plate thickness of the polished sample 10, that is, the measured values of the first to third film thickness measuring devices 3 a to 3 c are calibrated based on the measured value of the distance measuring device 13. With these corrections and calibrations, the parallelism and plate thickness of the polished sample 10 can be accurately detected.

間隔測定器１３は、上述のように板厚の絶対値の基準として使用されるので、接触式測定器のように間隔の絶対値を測定できるものが望ましい。しかし、この間隔には一定量のスラリーが充填しているので、スラリーに対する補正を施すことで、膜厚測定器３ａ〜３ｃと同じく光学式、超音波式、静電容量式の膜圧測定器を利用することもできる。   Since the interval measuring device 13 is used as a reference for the absolute value of the plate thickness as described above, it is desirable that the interval measuring device 13 can measure the absolute value of the interval like a contact measuring device. However, since a certain amount of slurry is filled in this interval, by applying correction to the slurry, optical, ultrasonic, and capacitive film pressure measuring devices are the same as the film thickness measuring devices 3a to 3c. Can also be used.

上述した修正量及び板厚の絶対値を算出した後、制御装置は、その修正量に相当する制御信号をアクチュエータ１３に送出する。アクチュエータ１３は制御信号により駆動され、研摩ヘッド２と研摩定盤８間の間隔を修正する。その結果、研摩ヘッド２は研摩定盤８と平行に維持され、研摩試料は精密な平行平板に研摩加工される。   After calculating the correction amount and the absolute value of the plate thickness, the control device sends a control signal corresponding to the correction amount to the actuator 13. The actuator 13 is driven by a control signal to correct the distance between the polishing head 2 and the polishing surface plate 8. As a result, the polishing head 2 is maintained parallel to the polishing platen 8, and the polishing sample is polished into a precise parallel plate.

さらに制御装置は、板厚の絶対値が所定の仕上がり寸法に達すると警報を発し、停止する。板厚の絶対値は、研摩試料のない位置で測定された研摩ヘッド２と研摩定盤の間隔に基づき校正されるから、試料材料依存性を有する膜厚測定器３ａ〜３ｃのみの測定値より高い信頼性及び精度を有する。従って、高い精度で研摩試料の板厚を制御することができる。   Further, the control device issues an alarm and stops when the absolute value of the plate thickness reaches a predetermined finished size. Since the absolute value of the plate thickness is calibrated based on the distance between the polishing head 2 and the polishing platen measured at a position where there is no polishing sample, it is based on the measurement values of only the film thickness measuring devices 3a to 3c having sample material dependency. High reliability and accuracy. Therefore, the plate thickness of the polished sample can be controlled with high accuracy.

上述したように本明細書には以下の付記記載の発明が開示されている。
（付記１）研摩ヘッドの下面に固定された研摩試料を研摩定盤上に押圧して、前記研摩試料を薄片に研磨する研摩装置において、
前記研摩ヘッドに固定され、先端が前記研摩定盤に接して前記研摩ヘッドと前記研摩定盤の間隔を制御可能に保持するアクチュエータ付きのマイクロメータと、
前記研摩ヘッドの前記研摩試料上に設けられた、前記研摩試料の厚さを測定する膜厚測定器と、
前記膜厚測定器の測定値に基づき、前記研摩試料の平行度を修正するように前記アクチュエータを制御する制御装置とを有することを特徴とする研摩装置。
（付記２）２個の前記マイクロメータを有することを特徴とする付記１記載の研摩装置。
（付記３）３個の前記膜厚測定器を有することを特徴とする付記１又は２記載の研摩装置。
（付記４）複数の前記膜厚測定器と前記マイクロメータが直線上に配設されたことを特徴とする付記１、２又は３記載の研摩装置。
（付記５）前記膜厚測定器は、第１膜厚測定器と、前記第１膜厚測定器と２個の前記マイクロメータとを結ぶ直線上にそれぞれ配設された第２及び第３膜厚測定器とを有することを特徴とする付記４記載の研摩装置。
（付記６）前記研摩ヘッドの前記研摩試料の外側に設けられ、前記研摩ヘッドと前記研摩定盤の間隔を測定する間隔測定器を有することを特徴とする付記１、２、３、４又は５記載の研摩装置。
（付記７）２個の前記間隔測定器を有することを特徴とする付記６記載の研摩装置。
（付記８）前記アクチュエータは、ピエゾ素子又はステッピングモータにより駆動される直線移動素子であることを特徴とする付記１、２、３、４、５、６又は７記載の研摩装置。
（付記９）前記膜厚測定装置は、ループコイル式、静電容量式または光学式の膜厚測定装置であることを特徴とする請求項１、２、３、４、５、６、７又は８記載の研摩装置。 As described above, the present invention disclosed in the following supplementary notes is disclosed in this specification.
(Appendix 1) In a polishing apparatus for pressing a polishing sample fixed on the lower surface of a polishing head onto a polishing platen and polishing the polishing sample into a thin piece,
A micrometer with an actuator fixed to the polishing head and having a tip in contact with the polishing platen to controllably hold the distance between the polishing head and the polishing platen;
A film thickness measuring device for measuring the thickness of the polishing sample provided on the polishing sample of the polishing head;
A polishing apparatus comprising: a control device that controls the actuator so as to correct parallelism of the polishing sample based on a measurement value of the film thickness measuring device.
(Supplementary note 2) The polishing apparatus according to supplementary note 1, wherein the polishing apparatus has two micrometers.
(Supplementary Note 3) The polishing apparatus according to Supplementary Note 1 or 2, wherein the polishing apparatus has three film thickness measuring instruments.
(Supplementary note 4) The polishing apparatus according to supplementary note 1, 2, or 3, wherein the plurality of film thickness measuring devices and the micrometer are arranged on a straight line.
(Additional remark 5) The said film thickness measuring device is the 1st film thickness measuring device, and the 2nd and 3rd film | membrane each arrange | positioned on the straight line which ties the said 1st film thickness measuring device and two said micrometers, respectively. The polishing apparatus according to appendix 4, which has a thickness measuring instrument.
(Supplementary note 6) Supplementary note 1, 2, 3, 4 or 5 provided with an interval measuring device which is provided outside the polishing sample of the polishing head and measures the interval between the polishing head and the polishing platen. The polishing apparatus described.
(Supplementary note 7) The polishing apparatus according to supplementary note 6, which has two spacing measuring devices.
(Appendix 8) The polishing apparatus according to appendix 1, 2, 3, 4, 5, 6 or 7, wherein the actuator is a linear moving element driven by a piezo element or a stepping motor.
(Additional remark 9) The said film thickness measuring apparatus is a loop coil type, an electrostatic capacitance type, or an optical film thickness measuring apparatus, The 1, 2, 3, 4, 5, 6, 7, or 8. The polishing apparatus according to 8.

本発明に係る研摩装置を、透過型電子顕微鏡の薄片試料の作成に適用して、極めて薄くかつ優れた平行度を有する薄片試料を自動的に作成することができる。   The polishing apparatus according to the present invention can be applied to the preparation of a thin piece sample of a transmission electron microscope to automatically produce a thin piece sample having extremely thin and excellent parallelism.

本発明の第１実施形態の研摩装置の断面図Sectional drawing of the polishing apparatus of 1st Embodiment of this invention. 本発明の第１実施形態の研摩ヘッドの平面図The top view of the polishing head of 1st Embodiment of this invention 本発明の第１実施形態の研摩ヘッドの断面図Sectional drawing of the polishing head of 1st Embodiment of this invention. 本発明の第１実施形態の研摩ヘッドのＣＤ断面図CD sectional view of the polishing head of the first embodiment of the present invention.

符号の説明Explanation of symbols

１ ベッド
２ 研摩ヘッド
４ マイクロメータ
４ａ アクチュエータ
４ｂ スピンドル
４ｃ シンブル
３ 膜厚測定器
３ａ 第１膜厚測定器
３ｂ 第２膜厚測定器
３ｃ 第３膜厚測定器
６ ウエイト
５ 支持具
７ アーム
８ 研摩定盤
１０ 研摩試料
１１ スラリー供給装置
１２ 制御装置
１３ 間隔測定器
１４ スラリー 1 bed 2 polishing head 4 micrometer 4a actuator 4b spindle 4c thimble 3 film thickness measuring device 3a first film thickness measuring device 3b second film thickness measuring device 3c third film thickness measuring device 6 weight 5 support tool 7 arm 8 polishing Panel 10 Polished sample 11 Slurry supply device 12 Control device 13 Interval measuring device 14 Slurry

Claims (4)

研摩ヘッドの下面に固定された研摩試料を研摩定盤上に押圧して、前記研摩試料を薄片に研摩する研摩装置において、
前記研摩ヘッドに固定され、先端が前記研摩定盤に接して前記研摩ヘッドと前記研摩定盤の間隔を制御可能に保持するアクチュエータ付きのマイクロメータと、
前記研摩ヘッドの前記研摩試料上に設けられた、研摩中に前記研摩試料の厚さを測定する膜厚測定器と、
前記研摩ヘッドの前記研摩試料の外側に設けられ、研摩中に前記研摩ヘッドと前記研摩定盤の間隔を測定する間隔測定器と、
前記膜厚測定器および前記間隔測定器の測定値に基づき、前記研摩試料の平行度を修正するように前記アクチュエータを制御する制御装置とを有することを特徴とする研摩装置。 In a polishing apparatus for pressing a polishing sample fixed on the lower surface of the polishing head onto a polishing platen and polishing the polishing sample into a thin piece,
A micrometer with an actuator fixed to the polishing head and having a tip in contact with the polishing platen to controllably hold the distance between the polishing head and the polishing platen;
A film thickness measuring device provided on the polishing sample of the polishing head for measuring the thickness of the polishing sample during polishing;
Wherein provided on the outside of the polishing sample polishing head, and a distance measuring device for measuring an interval between the polishing head and the polishing surface plate while grinding,
A polishing apparatus comprising: a control device that controls the actuator so as to correct parallelism of the polishing sample based on the measurement values of the film thickness measuring instrument and the interval measuring instrument . 複数の前記膜厚測定器と前記マイクロメータが直線上に配設されたことを特徴とする請求項１記載の研摩装置。   The polishing apparatus according to claim 1, wherein the plurality of film thickness measuring instruments and the micrometer are arranged on a straight line. 前記アクチュエータは、ピエゾ素子又はステッピングモータにより駆動される直線移動素子であることを特徴とする請求項１又は２記載の研摩装置。The polishing apparatus according to claim 1 or 2, wherein the actuator is a linear movement element driven by a piezo element or a stepping motor. 前記膜厚測定装置は、ループコイル式、静電容量式または光学式の膜厚測定装置であることを特徴とする請求項１、２又は３記載の研摩装置。   The polishing apparatus according to claim 1, 2 or 3, wherein the film thickness measuring device is a loop coil type, a capacitance type or an optical type film thickness measuring device.
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