JP4799059B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP4799059B2 JP4799059B2 JP2005186854A JP2005186854A JP4799059B2 JP 4799059 B2 JP4799059 B2 JP 4799059B2 JP 2005186854 A JP2005186854 A JP 2005186854A JP 2005186854 A JP2005186854 A JP 2005186854A JP 4799059 B2 JP4799059 B2 JP 4799059B2
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- 239000004065 semiconductor Substances 0.000 title claims description 72
- 239000000758 substrate Substances 0.000 claims description 35
- 239000003990 capacitor Substances 0.000 claims description 25
- 239000010410 layer Substances 0.000 description 368
- 238000004519 manufacturing process Methods 0.000 description 42
- 238000000034 method Methods 0.000 description 23
- 239000000463 material Substances 0.000 description 20
- 239000011229 interlayer Substances 0.000 description 13
- 229910004298 SiO 2 Inorganic materials 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- 238000001020 plasma etching Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 7
- 229910052731 fluorine Inorganic materials 0.000 description 7
- 239000011737 fluorine Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000011810 insulating material Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000001151 other effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 229910004121 SrRuO Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
- H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
- H01G5/18—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes due to change in inclination, e.g. by flexing, by spiral wrapping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2041—Beam type
- H10N30/2042—Cantilevers, i.e. having one fixed end
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/01—Switches
- B81B2201/012—Switches characterised by the shape
- B81B2201/014—Switches characterised by the shape having a cantilever fixed on one side connected to one or more dimples
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Computer Hardware Design (AREA)
- Micromachines (AREA)
Description
図1は、本発明の第1の実施形態に係るMEMSデバイスを示す平面図である。図2は、図1に示したMEMSデバイスのII−II線に沿った断面図である。なお、平面図において、後述するキャップ部27の内部の構成は、発明の理解を容易にするために、実線で示している。
第2の実施形態は、アクチュエータ25を用いてスイッチを構成したものである。図3は、本発明の第2の実施形態に係るMEMSデバイスを示す平面図である。図4は、図3に示したMEMSデバイスのIV−IV線に沿った断面図である。
第3の実施形態は、アクチュエータ25を用いてLCタンク回路(LC直列共振回路)を構成したものである。図5は、本発明の第3の実施形態に係るMEMSデバイスを示す平面図である。図6は、図5に示したMEMSデバイスのVI−VI線に沿った断面図である。なお、キャップ部27以外の構成は、第1の実施形態と同じである。よって、図5の平面図において、アクチュエータ25及び第1の電極層17の図示は省略する。
以下に、例えばMOSトランジスタ及びMEMSデバイスを備えた半導体装置の製造方法の第1の例について説明する。
以下に、例えばMOSトランジスタ及びMEMSデバイスを備えた半導体装置の製造方法の第2の例について説明する。
以下に、例えばMOSトランジスタ及びMEMSデバイスを備えた半導体装置の製造方法の第3の例について説明する。
以下に、例えばMOSトランジスタ及びMEMSデバイスを備えた半導体装置の製造方法の第4の例について説明する。
以下に、例えばMOSトランジスタ及びMEMSデバイスを備えた半導体装置の製造方法の第5の例について説明する。
Claims (3)
- 半導体基板と、
前記半導体基板の上方に設けられ、かつ上方向に動くアクチュエータと、
前記アクチュエータにより駆動される第1の電極層と、
前記第1の電極層の上方に設けられ、かつ第2の電極層と、前記第2の電極層の下に設けられた第1の絶縁層とを含むキャップ部と
を具備し、
前記第1の電極層、前記第2の電極層及び前記第1の絶縁層は、可変容量として機能することを特徴とする半導体装置。 - 前記半導体基板上に設けられ、かつ前記アクチュエータ及び前記第1の電極層を支持する第2の絶縁層と、
前記アクチュエータ上に設けられ、かつ前記第2の絶縁層の膜厚より薄い第3の絶縁層と
をさらに具備し、
前記アクチュエータは、下部電極層と、前記下部電極層の上に設けられた圧電層と、前記圧電層の上に設けられた上部電極層とを含むことを特徴とする請求項1記載の半導体装置。 - 前記第2の電極層は、前記アクチュエータ及び前記第1の電極層を覆い、
前記キャップ部は、前記第2の電極層を支持しかつ前記アクチュエータ及び前記第1の電極層を囲む支持層を含むことを特徴とする請求項1又は2記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005186854A JP4799059B2 (ja) | 2005-06-27 | 2005-06-27 | 半導体装置 |
US11/252,882 US7402907B2 (en) | 2005-06-27 | 2005-10-19 | Semiconductor device and manufacturing method thereof |
CN2006100941354A CN1893137B (zh) | 2005-06-27 | 2006-06-27 | 半导体器件及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005186854A JP4799059B2 (ja) | 2005-06-27 | 2005-06-27 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007000994A JP2007000994A (ja) | 2007-01-11 |
JP4799059B2 true JP4799059B2 (ja) | 2011-10-19 |
Family
ID=37568015
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005186854A Expired - Fee Related JP4799059B2 (ja) | 2005-06-27 | 2005-06-27 | 半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7402907B2 (ja) |
JP (1) | JP4799059B2 (ja) |
CN (1) | CN1893137B (ja) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6502409B1 (en) * | 2000-05-03 | 2003-01-07 | Computer Process Controls, Inc. | Wireless method and apparatus for monitoring and controlling food temperature |
US7541209B2 (en) * | 2005-10-14 | 2009-06-02 | Hewlett-Packard Development Company, L.P. | Method of forming a device package having edge interconnect pad |
US7679186B2 (en) * | 2005-12-08 | 2010-03-16 | Electronics And Telecommunications Research Institute | Piezolectric micro electro-mechanical system switch, array of the switches, and method of fabricating the same |
KR100832627B1 (ko) * | 2006-05-17 | 2008-05-27 | 삼성전기주식회사 | 소결 베어링 모터 |
KR100841803B1 (ko) * | 2006-09-21 | 2008-06-26 | 김채곤 | 증기를 이용한 보일러장치 |
JP5232378B2 (ja) * | 2006-10-31 | 2013-07-10 | 株式会社アドバンテスト | 可変容量素子、共振器および変調器 |
JP2008114354A (ja) | 2006-11-08 | 2008-05-22 | Seiko Epson Corp | 電子装置及びその製造方法 |
JP5123532B2 (ja) * | 2007-01-30 | 2013-01-23 | 太陽誘電株式会社 | マイクロカンチレバー |
JP4792143B2 (ja) * | 2007-02-22 | 2011-10-12 | 株式会社デンソー | 半導体装置およびその製造方法 |
US20080211042A1 (en) * | 2007-02-28 | 2008-09-04 | Seiko Epson Corporation | Method for manufacturing semiconductor device, and semiconductor device |
KR100831724B1 (ko) * | 2007-03-12 | 2008-05-22 | 송성현 | 차량용 전원 차단 장치 |
KR20100057596A (ko) * | 2007-07-03 | 2010-05-31 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 존재 검출을 위한 박막 검출기 |
DE102007058951B4 (de) * | 2007-12-07 | 2020-03-26 | Snaptrack, Inc. | MEMS Package |
JP5305735B2 (ja) * | 2008-05-26 | 2013-10-02 | 株式会社東芝 | 微小電気機械システム装置およびその製造方法 |
JP5407765B2 (ja) * | 2008-11-20 | 2014-02-05 | 富士通株式会社 | 発振器および半導体装置 |
JP2011103327A (ja) * | 2009-11-10 | 2011-05-26 | Seiko Epson Corp | 圧電素子、圧電アクチュエーター、液体噴射ヘッドおよび液体噴射装置 |
US8535966B2 (en) | 2010-07-27 | 2013-09-17 | International Business Machines Corporation | Horizontal coplanar switches and methods of manufacture |
US9000656B2 (en) * | 2011-03-15 | 2015-04-07 | Qualcomm Mems Technologies, Inc. | Microelectromechanical system device including a metal proof mass and a piezoelectric component |
JP2012195829A (ja) | 2011-03-17 | 2012-10-11 | Seiko Epson Corp | 発振回路 |
JP2012222718A (ja) | 2011-04-13 | 2012-11-12 | Seiko Epson Corp | 発振器 |
JP5394435B2 (ja) * | 2011-05-13 | 2014-01-22 | 株式会社アドバンテスト | 製造方法、スイッチ装置、伝送路切り替え装置、および試験装置 |
WO2017062786A1 (en) * | 2015-10-07 | 2017-04-13 | William Marsh Rice University | Direct formation porous materials for electronic devices |
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US33568A (en) * | 1861-10-29 | Improvement in plows | ||
USRE33568E (en) | 1984-12-21 | 1991-04-09 | General Electric Company | Piezoelectric ceramic switching devices and systems and methods of making the same |
US4678957A (en) | 1986-06-24 | 1987-07-07 | General Electric Company | Piezoelectric ceramic switching devices and systems and methods of making the same |
US4675960A (en) * | 1985-12-30 | 1987-06-30 | Motorola, Inc. | Method of manufacturing an electrically variable piezoelectric hybrid capacitor |
JP3815405B2 (ja) * | 1996-08-27 | 2006-08-30 | オムロン株式会社 | マトリックスリレー |
US6359374B1 (en) | 1999-11-23 | 2002-03-19 | Mcnc | Miniature electrical relays using a piezoelectric thin film as an actuating element |
US6377438B1 (en) | 2000-10-23 | 2002-04-23 | Mcnc | Hybrid microelectromechanical system tunable capacitor and associated fabrication methods |
TW469657B (en) * | 2000-11-30 | 2001-12-21 | Ind Tech Res Inst | Piezoelectric-actuated adjustable electronic device |
DE10065013B4 (de) * | 2000-12-23 | 2009-12-24 | Robert Bosch Gmbh | Verfahren zum Herstellen eines mikromechanischen Bauelements |
WO2002088017A1 (fr) * | 2001-04-26 | 2002-11-07 | Advantest Corporation | Element de connexion et son procede de fabrication, micro-commutateur et son procede de fabrication |
US7264340B2 (en) * | 2002-01-15 | 2007-09-04 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric actuator and ink-jet head, and ink-jet recorder |
US6577476B1 (en) * | 2002-03-28 | 2003-06-10 | International Business Machines Corporation | Flux guide structure for a spin valve transistor which includes a slider body semiconductor layer |
US7052117B2 (en) * | 2002-07-03 | 2006-05-30 | Dimatix, Inc. | Printhead having a thin pre-fired piezoelectric layer |
JP4505189B2 (ja) * | 2003-03-24 | 2010-07-21 | 富士フイルム株式会社 | 透過型光変調装置及びその実装方法 |
JP2004358603A (ja) * | 2003-06-04 | 2004-12-24 | Shinko Electric Ind Co Ltd | マイクロデバイスの製造方法 |
JP4747604B2 (ja) * | 2005-02-18 | 2011-08-17 | Tdk株式会社 | セラミック電子部品 |
-
2005
- 2005-06-27 JP JP2005186854A patent/JP4799059B2/ja not_active Expired - Fee Related
- 2005-10-19 US US11/252,882 patent/US7402907B2/en not_active Expired - Fee Related
-
2006
- 2006-06-27 CN CN2006100941354A patent/CN1893137B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20060292729A1 (en) | 2006-12-28 |
JP2007000994A (ja) | 2007-01-11 |
CN1893137A (zh) | 2007-01-10 |
CN1893137B (zh) | 2010-12-08 |
US7402907B2 (en) | 2008-07-22 |
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