JP4771588B2 - Optical semiconductor element storage package - Google Patents

Optical semiconductor element storage package Download PDF

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JP4771588B2
JP4771588B2 JP2000396304A JP2000396304A JP4771588B2 JP 4771588 B2 JP4771588 B2 JP 4771588B2 JP 2000396304 A JP2000396304 A JP 2000396304A JP 2000396304 A JP2000396304 A JP 2000396304A JP 4771588 B2 JP4771588 B2 JP 4771588B2
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dielectric
optical semiconductor
semiconductor element
wiring layer
optical
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JP2002198543A (en
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政信 石田
美津夫 柳沢
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Kyocera Corp
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance

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  • Light Receiving Elements (AREA)

Description

【０００１】
【発明が属する技術分野】
本発明は、光半導体素子を収納する光半導体素子収納用パッケージに関し、特に、パッケージ内から信号を入出力するための入出力端子の改良に関する。
【０００２】
【従来技術】
近年、光通信分野等で用いられる各種光半導体素子を収納した光半導体収納用パッケージ（以下、光パッケージという）が注目されている。
かかる光パッケージの一般的な構造は、図３の概略断面図に示すように、金属製の基板３０の上面に絶縁基体３１の表面に光半導体素子（以下、光素子と略す。）３２が搭載される実装基板３３を載置する載置部３０ａを囲繞するように金属製の枠体３５が基板３０の表面に接合、固定されている。また、枠体３５の上面には光素子３２を気密に封止するための蓋体３６が配設され、基板３０、枠体３５および蓋体３６によって光素子３２が気密に封止されている。
【０００３】
また、枠体３５の側壁には貫通孔３５ａが設けられ、枠体３５の該貫通孔３５ａを囲む外壁面には、内部に光ファイバ等の光信号の伝送線路（以下、光線路と略す。）３７を挿入するための貫通孔３８ａを有する固定部材３８が接着、固定されており、固定部材３８の貫通孔３８ａ内に挿入された光線路３７の先端から出力された光信号を光素子３２にて受光するように配置されている。なお、光線路３７は固定部材３８の貫通孔３８ａ内に充填される半田等の接着剤３９によって固定部材３８と接着される。
【０００４】
一方、光素子３２にて受光した信号は、実装基板３３に形成された配線回路（図示せず）やワイヤボンディング４０を介して、枠体３５の側壁を貫通するように形成された２つの誘電体４１、４２間に信号配線層４３を形成した入出力端子４４の該信号配線層４３の露出部と接続され、さらに、信号配線層４３の他端の露出部は、枠体３５の外に形成されたリード端子４５と接続されて、リード端子４５によって外部回路（図示せず）とパッケージとを接続する構成からなる。
【０００５】
また、入出力端子４４の構造は、誘電体４１の上面の中央部に信号配線層４３を形成し、かつ誘電体４１の下面にグランド層（接地導体層）４７を形成して、信号配線層４３とグランド層４７とによってマイクロストリップ線路が形成されており、また、誘電体４２は信号配線層４３を挟んで誘電体４１と接合されるとともに、信号配線層４３の両端が露出するように誘電体４２が誘電体４１よりも短く形成された、いわゆるフィードスル構造からなる。
【０００６】
【発明が解決しようとする課題】
上記光半導体素子収納用パッケージにおいては、光半導体素子およびそれに接続される接続回路にて処理される光−電気の変換効率を高めるために、パッケージ内で発生する容量（Ｃ）成分を低減する必要があるが、上述した従来の光半導体素子収納用パッケージでは、パッケージで発生する容量成分が大きく、特に、上述した枠体の側壁を貫通するように形成され、ライン長の長いフィードスルー部の信号配線層の部分にて大きな容量が発生することから、光−電気の変換速度が遅くなるために信号の処理能力が低下するという問題があった。
【０００７】
本発明は、上記課題を解決するためになされたものであり、その目的は、光−電気信号の変換速度を向上でき、光−電気信号を高速に、かつ円滑に授受することが可能な光半導体素子収納用パッケージを提供することにある。
【０００８】
【課題を解決するための手段】
本発明者等は、上記課題に対し、上記入出力端子の構造について検討した結果、該入出力端子の信号配線層が露出した部分の直下に位置する誘電体に空隙部を形成することによって、信号配線層にて発生する容量成分を低減でき、パッケージ全体としての容量成分を低減する結果、光−電気信号の変換速度を向上して、光−電気信号を高速に、かつ円滑に授受することができることを知見した。
【０００９】
すなわち、本発明の光半導体素子収納用パッケージは、上面に光半導体素子が搭載される搭載部を有する底板と、前記光半導体素子搭載部を囲むように前記底板表面に取着される枠体と、該枠体の側壁を貫通して形成されるか、または該枠体の側壁に配設された貫通孔に取着され、かつ内部に光信号の伝送線路を挿入するための貫通孔を有する筒状の固定部材と、前記枠体を貫通して形成され、かつ表面に前記光半導体素子と電気的に接続される信号配線層を形成した第１の誘電体と、該第１の誘電体の信号配線層の両端が露出するように前記信号配線層を挟んで前記第１の誘電体と接合され、該第１の誘電体と前記枠体との間に配設される第２の誘電体と、前記第１の誘電体の前記信号配線層を形成した面と反対側の面に形成されたグランド層と、を備えた入出力端子と、前記枠体の上面に取着され、前記光半導体素子を気密に封止する蓋体と、を具備する光半導体素子収納用パッケージであって、前記第１の誘電体の前記信号配線層の露出部の直下に空隙部を形成したことを特徴とするものである。
【００１０】
ここで、前記空隙部を形成した直上の前記信号配線層の実効誘電率が８以下であること、前記第１の誘電体全体の厚み（ｔ1）に対する前記空隙部の厚み（ｔ2）の比（ｔ2／ｔ1）が０．１以上であること、前記第１の誘電体全体の厚み（ｔ1）が０．２５〜１ｍｍであること、前記信号配線層の幅（ｗ2）に対する前記空隙部の幅（ｗ1）の比（ｗ1／ｗ2）が２．５以上であることが望ましい。
【００１１】
【発明の実施の形態】
本発明の光半導体素子収納用パッケージ（以下、光パッケージと略す。）の一例について、その概略断面図である図１および入出力端子の概略斜視図である図２を基に説明する。
【００１２】
図１の光パッケージ１によれば、底板２の上面に、表面に光半導体素子３が搭載された絶縁基体４からなる実装基板５を載置するための載置部２ａを囲繞するように金属製の枠体７が、溶接または半田等の接続部材を介して底板２の表面に取着、固定されている。また、枠体７の上面には光半導体素子（以下、光素子と略す。）３を気密に封止するための蓋体９が配設され、底板２、枠体７および蓋体９によって光素子３が気密に封止されている。
【００１３】
さらに、枠体７の側壁には貫通孔７ａが設けられ、該貫通孔７ａを囲む枠体７の外壁面には、内部に光ファイバ等の光信号の伝送線路（以下、光線路と略す。）１０を挿入するための貫通孔１１ａを有する固定部材１１が接着、固定されて、枠体７の貫通孔７ａと固定部材１１の貫通孔１１ａが連結して配設されている。
【００１４】
そして、固定部材１１の貫通孔１１ａ内に挿入された光線路１０の先端から出力された光信号を光素子３にて受光するように配置されている。なお、光線路１０は固定部材１１の貫通孔１１ａ内に充填される半田等の接着剤１３によって固定部材１１と接着される。
【００１５】
一方、光素子３は、実装基板５に形成された配線回路（図示せず）やワイヤボンディング１５を介して、枠体７の側壁を貫通して形成され、両端が第１の誘電体１６上面から露出するとともに、枠体７の側壁部において第１の誘電体１６と第２の誘電体１７との２つの誘電体１６、１７間に挟持された信号配線層１８の露出部１８ａと接続されている。
【００１６】
また、信号配線層１８は、第１の誘電体１６上にて枠体７の外に形成されたリード端子２０と銀ロウ等のロウ材による接合によって接続されており、リード端子２０によって外部回路（図示せず）と光パッケージ１とが接続されている。
【００１７】
さらに、第１の誘電体１６上面に形成される信号配線層１８は、特に、インダクタンスを小さくする等の理由から光線路１０と同一線上に配置され、かつ誘電体１６、１７との熱膨張差に起因する信号配線層１８への応力の発生を抑制して信号配線層１８を伝送する信号の伝送特性が劣化することを防止するために、第１の誘電体１６上面の中央部に形成され、また、第１の誘電体１６の下面（信号配線層１８を形成する面と反対の底面）には、接地導体層（グランド層）２２が形成されて、信号配線層１８とグランド層２２とによってマイクロストリップ線路が形成されており、また、第１の誘電体１６、第２の誘電体１７、信号配線層１８およびグランド層２２とによって、光パッケージ１の内部と外部を接続する入出力端子２４を形成している。
【００１８】
（空隙部）本発明によれば、上記入出力端子２４において、第１の誘電体１６の信号配線層１８形成部のうち、露出部１８ａの直下に位置する第１の誘電体１６に空隙部２６を形成したことが大きな特徴であり、これによって、信号の伝送特性に関わる空隙部２６を加味した第１の誘電体１６の実効誘電率を小さくでき、信号配線層１８にて発生する容量成分を低減できることから、パッケージ全体１としての容量成分を低減できる。その結果、
Ｔ＝２．１９ＣＲ
（ただし、Ｔ：受光感度を示す立ち上がり値（光信号を電気信号に変換する効率値）、Ｃ：パッケージ（配線全体＋光素子）の容量、Ｒ：（配線全体＋光素子）の抵抗値）で示される光−電気信号の変換速度を向上して、光−電気信号を高速に、かつ円滑に授受することができる。
【００１９】
ここで、空隙部２６の形状は、矩形状、碗状等いずれの形状でもよいが、製造の容易性の点および空隙部の容積を増す上では矩形形状であることが望ましい。また、その角部にはＲ部やテーパーが設けられていてもよい。なお、空隙部２６は第１の誘電体１６の内部に設けられていてもよいが、製造の容易性の点で第１の誘電体１６の底面に切り欠きとして形成されることが望ましい。
【００２０】
また、空隙部２６の厚さ（高さ）は、容量成分の低減の点および第１の誘電体１６の機械的強度を維持する点で、第１の誘電体１６全体の厚み（ｔ1）に対する空隙部２６の厚み（ｔ2）の比（ｔ2／ｔ1）が０．１以上、特に０．３以上、さらに０．５以上であることが望ましい。なお、第１の誘電体１６の厚み（ｔ1）は、容量成分の低減の点および機械的強度を維持する点で、０．２５〜２ｍｍ、特に０．３６〜１ｍｍであることが望ましい。
【００２１】
一方、空隙部２６の幅（ｗ1）は、特に、容量成分の低減の点で信号配線層１８の幅（ｗ2）に対する比（ｗ1／ｗ2）が２．５以上、特に第１の誘電体１６の強度を維持するためには２．５〜３であることが望ましい。
【００２２】
さらには空隙部２６の幅（ｗ1）を第１の誘電体１６の幅（ｗ3）と同じとする、すなわち、空隙部２６の両側端が開放されたものであってもよいが、強度の観点および信号配線層１８を伝送する信号の伝送特性を向上させるためには、第１の誘電体１６の幅方向の断面が凹部をなし、該凹部内が空隙部１８となるように形成される、すなわち、空隙部２６の幅（ｗ1）が第１の誘電体１６の幅（ｗ3）よりも小さく形成されていることが望ましい。
【００２３】
さらに、空隙部２６の長さ（ｄ）は第１の誘電体１６の信号配線層１８形成面の露出部１８ａの長さに依存し、特に、容量の低減、強度の点で空隙部２６の長さ（ｄ）と第１の誘電体１６の信号配線層１８形成面の露出部１８ａの長さと同じであることが望ましい。なお、該露出部１８ａは信号配線層１８と接続されるリード端子２０やワイヤボンディング１５との接続信頼性の点で、例えば、片方の長さが０．５〜２ｍｍ、特に０．８〜１．５ｍｍにて形成されるが、空隙部２６の長さ（ｄ）は０．２〜２ｍｍ、特に０．５〜１．５ｍｍであることが望ましい。なお、２つの露出部１８ａの長さは必ずしも同じである必要はなく、信号配線層１８に接続されるリード端子２０やワイヤボンディング１５との接続状態によって変わりうる。
【００２４】
また、上記空隙部２６を形成することによって、この空隙部２６を加味した第１の誘電体１６の実効誘電率は８以下、特に６以下となり、立ち上がり時間（Ｔ）は空隙部２６を形成しない場合の時間を１００とした時の比率（Ｔｒ比）が５０以下、特に３０以下となる。
【００２５】
一方、底板２は、光素子３を搭載する実装基板４を支持する支持部材として機能し、その材質は、鉄（Ｆｅ）−ニッケル（Ｎｉ）−コバルト（Ｃｏ）合金、銅（Ｃｕ）−タングステン（Ｗ）合金、アルミニウム、Ｃｕ−Ｍｏ、Ｃｕ等の金属材料、またはセラミックスからなる。また、枠体７および蓋体９は、底板２の熱膨張係数に近似する金属、例えば、鉄（Ｆｅ）−ニッケル（Ｎｉ）−コバルト（Ｃｏ）合金等の金属材料またはセラミックスからなり、光素子３を気密に封止するとともに、光素子３等にて発生した熱を外部へ放熱する。
【００２６】
なお、底板２、枠体７、蓋体９およびリード端子２０は、例えば、金属のインゴット（塊）に圧延加工法や打ち抜き加工法等、従来周知の金属加工法を施して形成できる。なお、これらの外表面には耐食性を高め、かつロウ材に対する濡れ性を改善するために、金属メッキ膜、特に厚さ２〜６μｍのニッケルメッキ膜と厚さ０．５〜５μｍの金メッキ膜を順次形成することが望ましい。
【００２７】
そして、底板２と枠体７との間、および枠体７と蓋体９との間は、Ｐｂ系、Ｐｂ−Ｓｎ系、金（Ａｕ）―錫（Ｓｎ）合金、Ａｇ−Ｃｕ系、Ａｕ−Ｇｅ系の半田等の低融点ロウ材にて接合されるか、またはシーム溶接法等の溶接により接合される。なお、底板２、枠体７および蓋体９がセラミックスからなる場合には該セラミックスの表面にメタライズを形成して接合される。
【００２８】
また、固定部材１１は、枠体７に熱膨張係数が近似する、例えば鉄（Ｆｅ）−ニッケル（Ｎｉ）−コバルト（Ｃｏ）合金等の金属材料からなり、その内部の貫通孔１１ａには光ファイバ等の光線路１０が挿入されて、樹脂や半田材等の接着剤により固定部材１１と光線路１０とが固定される。なお、固定部材１１と光線路１０とを半田により接続する場合には、光線路１０の半田濡れ性を高めるために、予め光線路１０の先端部付近の外周面に蒸着法等の薄膜形成法によってＴａ、Ｔｉ、Ｗ、Ｍｏ、Ｃｒ、Ｎｉ、Ｐｂ、Ｓｎ、Ａｕ、Ｐｄの群から選ばれる少なくとも１種のメタライズを施してから光線路１０を固定部材１１内に挿入することが望ましい。
【００２９】
さらに、入出力端子２４を構成する第１の誘電体１６および第２の誘電体１７は、アルミナ（Ａｌ2Ｏ3）、窒化アルミニウム（ＡｌＮ）、コージェライト、ムライト、石英、ガラスセラミックス等のセラミックスやテフロン等の樹脂が適応可能であるが、中でも、金属製の枠体７との接合性、強度の点で、セラミックスからなることが望ましく、また、熱膨張特性の観点で枠体７との４０〜４００℃における熱膨張係数の差が１０×１０-6／℃以下、特に５×１０-6／℃以下のセラミックスからなることが望ましい。
【００３０】
また、第１の誘電体１６と第２の誘電体１７とは焼成したセラミックス同士を接合してもよいが、寸法精度の向上および製造の容易性の点で焼成によって同時に形成されたものであることが望ましい。
【００３１】
さらに、第１の誘電体１６の表面に形成される信号配線層１８およびグランド層２２は、モリブデン（Ｍｏ）―マンガン（Ｍｎ）、タングステン（Ｗ）、銅（Ｃｕ）、銀（Ａｇ）、パラジウム（Ｐｄ）、白金（Ｐｔ）および金（Ａｕ）の群から選ばれる少なくとも１種の金属を含有する導体層にて形成され、ペーストを塗布して焼成するか、または金属箔等の高純度金属にて形成される。
【００３２】
また、信号配線層１８およびグランド層２２の表面には、耐湿性向上、耐酸化性向上およびリード端子２０、ワイヤボンディング１５または枠体７と電気的な接続を行うために、Ｎｉ、Ｃｕ、Ａｕ等のメッキ膜（図示せず）が形成されることが望ましい。さらに、信号配線層１８は銀ロウ、半田等のロウ材を介してリード端子２０およびワイヤボンディング１５と接続され、また、グランド層２２は枠体７とロウ材等によって接合される。
【００３３】
さらに、絶縁基体４は、アルミナ（Ａｌ2Ｏ3）、窒化アルミニウム（ＡｌＮ）、コージェライト、ムライト、石英、ガラスセラミックス等のセラミックスやテフロン等の樹脂が適応可能であるが、中でも、金属製の底板２や枠体７との接合性、強度の点で、セラミックスからなることが望ましく、また、熱膨張特性の観点で枠体７との４０〜４００℃における熱膨張係数の差が１０×１０-6／℃以下のセラミックスからなることが望ましい。
【００３４】
また、絶縁基体４の表面（図１によれば側面）に搭載される光素子３は、光線路１０から出射される光信号を効率よく受信する位置に配置される。また、実装基板５はその下面に形成したメタライズ金属層等を介して半田および／または有機樹脂により底板２の載置部２ａに接合される。
【００３５】
（他の形態）
なお、図１によれば、底板２、枠体７および蓋体９は別体として形成したが、本発明はこれに限定されるものではなく、底板と枠体、また枠体と蓋体が一体物として形成されていてもよい。
【００３６】
また、図１によれば、光線路１０を固定する固定部材１１が枠体７の側面に接着された構造であるが、固定部材自体が枠体７の側壁に貫通して形成されていてもよい。
【００３７】
さらに、図１では、光線路１０から出射された光信号を受光する受光素子である光素子３のみが搭載されているが、光素子が複数個搭載されていてもよく、また、逆に光線路に信号を発する発光素子が搭載されていてもよい。なお、本発明によれば、光信号を電気信号に変換する場合に特に有効であるために、光素子として、光線路から出射される信号を受光する受光素子を具備することが望ましい。
【００３８】
【実施例】
まず、鉄−ニッケル−コバルト合金からなり、外表面にニッケルメッキ膜および金メッキ膜を形成した底板、枠体、蓋体、固定部材を準備した。
【００３９】
一方、アルミナ原料粉末に焼結助剤を添加し、かつ適当な有機バインダや溶剤等を添加混合してスラリーを作製し、このスラリーを用いてドクターブレード法によってグリーンシートを形成し、該グリーンシートの所定位置にスクリーン印刷法によって、モリブデン（Ｍｏ）−マンガン（Ｍｎ）およびタングステン（Ｗ）を主成分とするメタライズペーストを用いて所定の配線層を塗布し、これを複数枚積層した後、１６００℃で焼成して光素子を実装する絶縁基板を作製した。
【００４０】
他方、上記グリーンシートにスクリーン印刷法により焼成後の幅が０．５ｍｍとなる信号配線層をなす導体層を形成して第１のグリーンシートを作製し、また、他のグリーンシートの表面にグランド層をなす導体層を形成した後、このグリーンシートに切り欠きを形成してコの字状とした第２のグリーンシートを作製した。さらに、上記グリーンシートを所定形状にカットして第２の誘電体をなす第３のグリーンシートを作製した。そして、第２のグリーンシート−第１のグリーンシート−第３のグリーンシートの順に積層して１６００℃で焼成することにより、図２の入出力端子を作製した。
【００４１】
なお、上記切り欠き（空洞部）の焼成後の形状は、図２に示す形状とし、その具体的な寸法は、第１の誘電体の幅（ｗ3）３ｍｍ、長さ３．５ｍｍ、第２の誘電体の長さ１．５ｍｍ、第２の誘電体の幅については第１の誘電体の幅（ｗ3）と同じとして、第１の誘電体の信号配線層の両端部の露出長さをそれぞれ１．０ｍｍとした。また、空隙部の形状は、幅（ｗ1）１．５ｍｍ、長さ１．０ｍｍを一定として、第１の誘電体全体の厚み（ｔ1）および空隙部の厚み（ｔ2）を表１に示すように変えた入出力端子を作製した。また、焼成後のアルミナセラミックスの誘電率は１０であった。
【００４２】
次に、上記底板の表面に銀ロウによって枠体を接合し、該枠体の側壁の所定位置にドリルまたはパンチングメタルによって２ｍｍφの貫通孔を形成した。そして、該貫通孔形成部の側面に固定部材を銀ロウによって接合するとともに、前記入出力端子を枠体の他の側壁に形成した貫通孔内に配設して銀ロウにより接合した。また、前記底板の所定位置に上記絶縁基体を半田によって接合した。
【００４３】
そして、前記絶縁基体と前記入出力端子の信号配線層とを金からなるワイヤボンディングにて接続するとともに、該信号配線層にＡｇ−Ｃｕ半田を介して鉄−ニッケル−コバルト合金からなり、外表面にニッケルメッキ膜および金メッキ膜を形成したリード端子を接合した。
【００４４】
さらに、前記絶縁基体側面の所定位置に受光用の光半導体素子を実装した後、枠体の上面にシーム接合により蓋体を接合した。また、前記固定部材の貫通孔内に蒸着法によって先端付近の外周面にＴａＮ膜−Ｎｉメッキ膜−Ａｕメッキ膜を順次被着形成した光ファイバを挿入し、半田によって光ファイバと固定部材とを接合、固定することにより、光半導体素子収納用パッケージを作製した。
【００４５】
得られた光パッケージについて、光ファイバから信号を入力し、光電変換パルスパターン測定機によって立ち上がり時間を測定し、空隙を形成しない試料Ｎｏ．１の立ち上がり値を１００として、各形状における立ち上がり値（Ｔｒ値）の比（Ｔｒ比）を算出した。また、誘電体の誘電率（ε＝１０）、第１の誘電体の厚み（ｔ１）、空隙部の厚み（ｔ２）、信号配線層の幅（０．５ｍｍ）、空隙部の幅（ｗ１＝１．５ｍｍ）の形状からシュミレーションによって空隙部を加味した第１の誘電体の実効誘電率を算出した。結果は表１に示した。
【００４６】
【表１】

Figure 0004771588
【００４７】
表１の結果から明らかなように、空隙部を形成しない試料Ｎｏ．１、７に比較して空隙部を形成した試料Ｎｏ．２〜６ではいずれも実効誘電率が低下し、Ｔｒ比が１００よりも小さくなる、すなわち立ち上がり時間が短縮できることを確認した。
【００４８】
【発明の効果】
本発明の光半導体収納用パッケージによれば、該入出力端子の信号配線層が露出した部分の直下に位置する誘電体に空隙部を形成することによって、信号配線層にて発生する容量成分を低減でき、パッケージ全体としての容量成分を低減する結果、光−電気信号の変換速度を向上して、光−電気信号を高速に、かつ円滑に授受することができる。
【００４９】
【図面の簡単な説明】
【図１】本発明の光半導体素子収納用パッケージの一例を示す概略断面図である。
【図２】図１の光半導体素子収納用パッケージの入出力端子の構造を説明するための斜視図である。
【図３】従来の光半導体素子収納用パッケージの概略断面図である。
【符号の説明】
１・・・光半導体素子収納用パッケージ（光パッケージ）
２・・・底板
２ａ・・実装基板搭載部
３・・・光半導体素子（光素子）
４・・・絶縁基体
５・・・実装基板
７・・・枠体
７ａ、７ｂ・・貫通孔
９・・・蓋体
１０・・光信号の伝送線路（光線路）
１１・・固定部材
１１ａ・・貫通孔
１３・・接合部材
１５・・ワイヤボンディング
１６・・第１の誘電体
１７・・第２の誘電体
１８・・信号配線層
１８ａ・・露出部
２０・・リード端子
２２・・グランド層
２４・・入出力端子
２６・・空隙部[0001]
[Technical field to which the invention belongs]
The present invention relates to an optical semiconductor element housing package for housing an optical semiconductor element, and more particularly to improvement of an input / output terminal for inputting / outputting a signal from the package.
[0002]
[Prior art]
2. Description of the Related Art In recent years, an optical semiconductor storage package (hereinafter referred to as an optical package) in which various optical semiconductor elements used in the optical communication field or the like are attracting attention.
As shown in the schematic cross-sectional view of FIG. 3, the general structure of such an optical package is that an optical semiconductor element (hereinafter abbreviated as an optical element) 32 is mounted on the surface of an insulating base 31 on the upper surface of a metal substrate 30. A metal frame 35 is bonded and fixed to the surface of the substrate 30 so as to surround the mounting portion 30a on which the mounting substrate 33 to be mounted is placed. Further, a lid body 36 for hermetically sealing the optical element 32 is disposed on the upper surface of the frame body 35, and the optical element 32 is hermetically sealed by the substrate 30, the frame body 35, and the lid body 36. .
[0003]
A through hole 35a is provided in the side wall of the frame 35, and an optical signal transmission line such as an optical fiber (hereinafter abbreviated as an optical line) is formed on the outer wall surface surrounding the through hole 35a of the frame 35. ) A fixing member 38 having a through hole 38a for inserting 37 is bonded and fixed, and an optical signal output from the tip of the optical line 37 inserted into the through hole 38a of the fixing member 38 is an optical element 32. It arrange | positions so that it may receive light. The optical line 37 is bonded to the fixing member 38 with an adhesive 39 such as solder filled in the through hole 38 a of the fixing member 38.
[0004]
On the other hand, the signal received by the optical element 32 is supplied to two dielectrics formed so as to penetrate the side wall of the frame body 35 via a wiring circuit (not shown) formed on the mounting substrate 33 and the wire bonding 40. The signal wiring layer 43 formed between the bodies 41 and 42 is connected to the exposed portion of the signal wiring layer 43 of the input / output terminal 44, and the exposed portion of the other end of the signal wiring layer 43 is outside the frame body 35. The lead terminal 45 is connected to the external circuit (not shown) and the package by the lead terminal 45.
[0005]
Further, the structure of the input / output terminal 44 is such that a signal wiring layer 43 is formed at the center of the upper surface of the dielectric 41 and a ground layer (ground conductor layer) 47 is formed on the lower surface of the dielectric 41 to form a signal wiring layer. 43 and the ground layer 47 form a microstrip line, and the dielectric 42 is joined to the dielectric 41 with the signal wiring layer 43 in between, and the dielectric is formed so that both ends of the signal wiring layer 43 are exposed. The body 42 has a so-called feedthrough structure in which the body 42 is formed shorter than the dielectric body 41.
[0006]
[Problems to be solved by the invention]
In the optical semiconductor element housing package, it is necessary to reduce the capacitance (C) component generated in the package in order to increase the photoelectric conversion efficiency processed in the optical semiconductor element and the connection circuit connected thereto. However, in the conventional package for housing an optical semiconductor element described above, the capacitance component generated in the package is large, and in particular, the signal of the feed-through portion having a long line length formed so as to penetrate the side wall of the frame body described above. Since a large capacitance is generated in the wiring layer portion, there has been a problem that the signal processing capability is lowered because the photoelectric-electric conversion speed is reduced.
[0007]
The present invention has been made to solve the above-described problems, and an object of the present invention is to improve the optical-electrical signal conversion speed and to transmit and receive optical-electrical signals at high speed and smoothly. The object is to provide a package for housing semiconductor elements.
[0008]
[Means for Solving the Problems]
As a result of investigating the structure of the input / output terminal, the inventors have formed a void in the dielectric located immediately below the exposed portion of the signal wiring layer of the input / output terminal. Capacitance components generated in the signal wiring layer can be reduced, and as a result of reducing the capacitance components of the entire package, the optical-electrical signal conversion speed is improved, and optical-electrical signals are exchanged at high speed and smoothly. I found out that I can do it.
[0009]
That is, the optical semiconductor element storage package of the present invention includes a bottom plate having a mounting portion on which an optical semiconductor element is mounted on a top surface, and a frame attached to the bottom plate surface so as to surround the optical semiconductor element mounting portion. , Formed through the side wall of the frame body, or attached to a through hole provided in the side wall of the frame body, and having a through hole for inserting an optical signal transmission line therein A cylindrical fixing member; a first dielectric formed through the frame and having a signal wiring layer electrically connected to the optical semiconductor element on the surface; and the first dielectric A second dielectric layer disposed between the first dielectric body and the frame body, the second dielectric layer being joined to the first dielectric body with the signal wiring layer interposed therebetween so that both ends of the signal wiring layer are exposed. body and the first dielectric said signal ground wiring layer and the formed surface is formed on the opposite side of Input and output terminals, comprising: a layer, and is attached to the upper surface of the frame, an optical semiconductor element storage package having a, a lid body for sealing the optical semiconductor element hermetically, said first A void portion is formed immediately below the exposed portion of the signal wiring layer of the dielectric 1.
[0010]
Here, the effective dielectric constant of the signal wiring layer immediately above the gap is 8 or less, and the thickness (t 2 ) of the gap relative to the thickness (t 1 ) of the entire first dielectric. The ratio (t 2 / t 1 ) is 0.1 or more, the thickness (t 1 ) of the entire first dielectric is 0.25 to 1 mm, and the width (w 2 ) of the signal wiring layer It is desirable that the ratio (w 1 / w 2 ) of the width (w 1 ) of the voids to be 2.5 or more.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
An example of a package for housing an optical semiconductor element (hereinafter abbreviated as an optical package) of the present invention will be described with reference to FIG. 1 which is a schematic sectional view thereof and FIG. 2 which is a schematic perspective view of input / output terminals.
[0012]
According to the optical package 1 of FIG. 1, a metal is disposed on the upper surface of the bottom plate 2 so as to surround a mounting portion 2 a for mounting a mounting substrate 5 including an insulating base 4 on which an optical semiconductor element 3 is mounted. A made frame 7 is attached and fixed to the surface of the bottom plate 2 via a connection member such as welding or soldering. Further, a lid 9 for hermetically sealing an optical semiconductor element (hereinafter abbreviated as an optical element) 3 is disposed on the upper surface of the frame 7. The element 3 is hermetically sealed.
[0013]
Further, a through hole 7a is provided in the side wall of the frame body 7, and an optical signal transmission line such as an optical fiber (hereinafter abbreviated as an optical line) is provided inside the outer wall surface of the frame body 7 surrounding the through hole 7a. ) A fixing member 11 having a through hole 11a for inserting 10 is bonded and fixed, and the through hole 7a of the frame body 7 and the through hole 11a of the fixing member 11 are connected to each other.
[0014]
And it arrange | positions so that the optical element 3 may receive the optical signal output from the front-end | tip of the optical line 10 inserted in the through-hole 11a of the fixing member 11. FIG. The optical line 10 is bonded to the fixing member 11 with an adhesive 13 such as solder filled in the through hole 11 a of the fixing member 11.
[0015]
On the other hand, the optical element 3 is formed through a side wall of the frame body 7 via a wiring circuit (not shown) formed on the mounting substrate 5 and wire bonding 15, and both ends are on the upper surface of the first dielectric 16. And is connected to the exposed portion 18a of the signal wiring layer 18 sandwiched between the two dielectrics 16, 17 of the first dielectric 16 and the second dielectric 17 on the side wall of the frame body 7. ing.
[0016]
The signal wiring layer 18 is connected to a lead terminal 20 formed outside the frame body 7 on the first dielectric 16 by bonding with a brazing material such as silver brazing. (Not shown) and the optical package 1 are connected.
[0017]
Further, the signal wiring layer 18 formed on the upper surface of the first dielectric 16 is disposed on the same line as the optical line 10 particularly for the purpose of reducing the inductance, and the thermal expansion difference between the dielectrics 16 and 17. In order to prevent the transmission characteristics of the signal transmitted through the signal wiring layer 18 from being deteriorated by suppressing the generation of stress on the signal wiring layer 18 due to the above, it is formed at the center of the upper surface of the first dielectric 16. Further, a ground conductor layer (ground layer) 22 is formed on the lower surface of the first dielectric 16 (the bottom surface opposite to the surface on which the signal wiring layer 18 is formed), and the signal wiring layer 18, the ground layer 22, A microstrip line is formed by the input / output terminal for connecting the inside and the outside of the optical package 1 by the first dielectric 16, the second dielectric 17, the signal wiring layer 18 and the ground layer 22. Forming 24 To have.
[0018]
(Gap) According to the present invention, in the input / output terminal 24, the first dielectric 16 located immediately below the exposed portion 18 a in the signal wiring layer 18 forming portion of the first dielectric 16 has a gap. 26 is a major feature, and as a result, the effective dielectric constant of the first dielectric 16 taking into account the gap portion 26 related to signal transmission characteristics can be reduced, and the capacitance component generated in the signal wiring layer 18 can be reduced. Therefore, the capacitance component of the entire package 1 can be reduced. as a result,
T = 2.19CR
(However, T: rising value indicating light receiving sensitivity (efficiency value for converting optical signal to electric signal), C: capacitance of package (whole wiring + optical element), R: resistance value of (whole wiring + optical element)) It is possible to improve the optical-electrical signal conversion speed indicated by the above, and to exchange the optical-electrical signal at high speed and smoothly.
[0019]
Here, the shape of the gap portion 26 may be any shape such as a rectangular shape or a bowl shape, but is preferably a rectangular shape in terms of ease of manufacturing and increasing the volume of the gap portion. Moreover, the corner | angular part may be provided with the R part and the taper. The gap 26 may be provided inside the first dielectric 16, but is preferably formed as a notch on the bottom surface of the first dielectric 16 in terms of ease of manufacture.
[0020]
Further, the thickness (height) of the gap portion 26 is the thickness (t 1 ) of the entire first dielectric 16 in terms of reducing the capacitance component and maintaining the mechanical strength of the first dielectric 16. It is desirable that the ratio (t 2 / t 1 ) of the thickness (t 2 ) of the void portion 26 to 0.1 is 0.1 or more, particularly 0.3 or more, and further 0.5 or more. The thickness (t 1 ) of the first dielectric 16 is preferably 0.25 to 2 mm, particularly 0.36 to 1 mm, from the viewpoint of reducing the capacitance component and maintaining the mechanical strength.
[0021]
On the other hand, the width (w 1 ) of the gap portion 26 is such that the ratio (w 1 / w 2 ) to the width (w 2 ) of the signal wiring layer 18 is 2.5 or more, particularly in terms of reducing the capacitance component, In order to maintain the strength of the dielectric 16, 2.5 to 3 is desirable.
[0022]
Furthermore, the width (w 1 ) of the gap portion 26 may be the same as the width (w 3 ) of the first dielectric 16, that is, the gap portion 26 may be open at both ends. In order to improve the transmission characteristics of the signal transmitted through the signal wiring layer 18 from the above viewpoint, the first dielectric 16 is formed such that the cross section in the width direction forms a recess and the inside of the recess becomes the void 18. In other words, it is desirable that the width (w 1 ) of the gap portion 26 is smaller than the width (w 3 ) of the first dielectric 16.
[0023]
Further, the length (d) of the gap portion 26 depends on the length of the exposed portion 18a on the surface of the first dielectric 16 where the signal wiring layer 18 is formed. In particular, the gap portion 26 has a reduced capacity and strength. It is desirable that the length (d) is the same as the length of the exposed portion 18a of the signal wiring layer 18 formation surface of the first dielectric 16. The exposed portion 18a is, for example, 0.5 to 2 mm in length, particularly 0.8 to 1 in terms of connection reliability with the lead terminal 20 and the wire bonding 15 connected to the signal wiring layer 18. However, it is desirable that the length (d) of the gap 26 is 0.2 to 2 mm, particularly 0.5 to 1.5 mm. Note that the lengths of the two exposed portions 18 a are not necessarily the same, and may vary depending on the connection state with the lead terminal 20 and the wire bonding 15 connected to the signal wiring layer 18.
[0024]
Further, by forming the gap portion 26, the effective dielectric constant of the first dielectric 16 in consideration of the gap portion 26 is 8 or less, be particularly 6 or less, the rise time (T) does not form a gap portion 26 The ratio (Tr ratio) when the time in the case is 100 is 50 or less, particularly 30 or less.
[0025]
On the other hand, the bottom plate 2 functions as a support member for supporting the mounting substrate 4 on which the optical element 3 is mounted, and the material thereof is iron (Fe) -nickel (Ni) -cobalt (Co) alloy, copper (Cu) -tungsten. (W) It consists of metal materials, such as an alloy, aluminum, Cu-Mo, Cu, or ceramics. The frame body 7 and the lid body 9 are made of a metal that approximates the thermal expansion coefficient of the bottom plate 2, for example, a metal material such as iron (Fe) -nickel (Ni) -cobalt (Co) alloy, or ceramics. 3 is hermetically sealed, and heat generated in the optical element 3 and the like is radiated to the outside.
[0026]
The bottom plate 2, the frame body 7, the lid body 9, and the lead terminal 20 can be formed, for example, by subjecting a metal ingot (lumb) to a conventionally known metal processing method such as a rolling method or a punching method. In order to improve the corrosion resistance and improve the wettability to the brazing material on these outer surfaces, a metal plating film, particularly a nickel plating film having a thickness of 2 to 6 μm and a gold plating film having a thickness of 0.5 to 5 μm. It is desirable to form sequentially.
[0027]
The space between the bottom plate 2 and the frame body 7 and between the frame body 7 and the lid body 9 is Pb-based, Pb-Sn-based, gold (Au) -tin (Sn) alloy, Ag-Cu-based, Au -Joined by a low melting point brazing material such as Ge-based solder or by welding such as a seam welding method. When the bottom plate 2, the frame body 7, and the lid body 9 are made of ceramics, they are joined by forming metallization on the surface of the ceramics.
[0028]
The fixing member 11 is made of a metal material such as iron (Fe) -nickel (Ni) -cobalt (Co) alloy having a thermal expansion coefficient approximate to that of the frame body 7, and light is transmitted through the inner through-hole 11a. An optical line 10 such as a fiber is inserted, and the fixing member 11 and the optical line 10 are fixed by an adhesive such as a resin or a solder material. When the fixing member 11 and the optical line 10 are connected by solder, in order to improve the solder wettability of the optical line 10, a thin film forming method such as a vapor deposition method is previously formed on the outer peripheral surface near the tip of the optical line 10. It is desirable to insert the optical line 10 into the fixing member 11 after performing at least one metallization selected from the group consisting of Ta, Ti, W, Mo, Cr, Ni, Pb, Sn, Au, and Pd.
[0029]
Further, the first dielectric 16 and the second dielectric 17 constituting the input / output terminal 24 are ceramics such as alumina (Al 2 O 3 ), aluminum nitride (AlN), cordierite, mullite, quartz, and glass ceramics. Resin such as Teflon or the like is applicable, but among them, it is desirable to be made of ceramics in terms of bondability and strength with the metal frame 7, and from the viewpoint of thermal expansion characteristics, It is desirable that the difference in thermal expansion coefficient at 40 to 400 ° C. is 10 × 10 −6 / ° C. or less, particularly 5 × 10 −6 / ° C. or less.
[0030]
In addition, the first dielectric 16 and the second dielectric 17 may be formed by bonding the fired ceramics, but are simultaneously formed by firing from the viewpoint of improvement in dimensional accuracy and ease of manufacture. It is desirable.
[0031]
Further, the signal wiring layer 18 and the ground layer 22 formed on the surface of the first dielectric 16 are molybdenum (Mo) -manganese (Mn), tungsten (W), copper (Cu), silver (Ag), palladium. (Pd), platinum (Pt) and gold (Au) are formed of a conductor layer containing at least one metal selected from the group, and paste is applied and fired, or high-purity metal such as metal foil Is formed.
[0032]
Further, Ni, Cu, Au are provided on the surfaces of the signal wiring layer 18 and the ground layer 22 in order to improve moisture resistance, improve oxidation resistance, and make electrical connection with the lead terminal 20, the wire bonding 15, or the frame body 7. It is desirable to form a plating film (not shown). Further, the signal wiring layer 18 is connected to the lead terminals 20 and the wire bonding 15 via a brazing material such as silver solder or solder, and the ground layer 22 is joined to the frame body 7 by a brazing material or the like.
[0033]
Further, the insulating substrate 4 can be made of ceramics such as alumina (Al 2 O 3 ), aluminum nitride (AlN), cordierite, mullite, quartz, glass ceramics, and resins such as Teflon. It is desirable to be made of ceramics in terms of bondability and strength to the bottom plate 2 and the frame body 7, and in terms of thermal expansion characteristics, the difference in thermal expansion coefficient at 40 to 400 ° C. with respect to the frame body 7 is 10 × 10. It is desirable to be made of ceramics at -6 / ° C or less.
[0034]
Further, the optical element 3 mounted on the surface (side surface according to FIG. 1) of the insulating substrate 4 is disposed at a position where the optical signal emitted from the optical line 10 is efficiently received. The mounting substrate 5 is joined to the mounting portion 2a of the bottom plate 2 by solder and / or organic resin through a metallized metal layer formed on the lower surface thereof.
[0035]
(Other forms)
According to FIG. 1, the bottom plate 2, the frame body 7 and the lid body 9 are formed as separate bodies. However, the present invention is not limited to this, and the bottom plate and the frame body, or the frame body and the lid body. It may be formed as a single piece.
[0036]
Further, according to FIG. 1, the fixing member 11 that fixes the optical line 10 is bonded to the side surface of the frame body 7, but the fixing member itself may be formed through the side wall of the frame body 7. Good.
[0037]
Further, in FIG. 1, only the optical element 3 which is a light receiving element for receiving the optical signal emitted from the optical line 10 is mounted, but a plurality of optical elements may be mounted, and conversely A light emitting element that emits a signal may be mounted on the road. According to the present invention, since it is particularly effective when converting an optical signal into an electrical signal, it is desirable to provide a light receiving element that receives a signal emitted from the optical line as the optical element.
[0038]
【Example】
First, a bottom plate, a frame, a lid, and a fixing member made of an iron-nickel-cobalt alloy and having a nickel plating film and a gold plating film formed on the outer surface were prepared.
[0039]
On the other hand, a sintering aid is added to the alumina raw material powder, and an appropriate organic binder or solvent is added and mixed to prepare a slurry, and a green sheet is formed by the doctor blade method using the slurry. After applying a predetermined wiring layer to the predetermined position by a screen printing method using a metallized paste mainly composed of molybdenum (Mo) -manganese (Mn) and tungsten (W), and laminating a plurality of these, 1600 An insulating substrate on which an optical element was mounted was manufactured by baking at a temperature of 0 ° C.
[0040]
On the other hand, a conductor layer forming a signal wiring layer having a width of 0.5 mm after firing is formed on the green sheet by a screen printing method to produce a first green sheet, and a ground layer is formed on the surface of another green sheet. After forming the conductor layer constituting the layer, a second green sheet having a U-shape was produced by forming a notch in the green sheet. Further, the green sheet was cut into a predetermined shape to produce a third green sheet forming a second dielectric. Then, the second green sheet-first green sheet-third green sheet were laminated in this order and fired at 1600 [deg.] C. to produce the input / output terminal of FIG.
[0041]
Note that the shape of the cutout (cavity portion) after firing is the shape shown in FIG. 2, and the specific dimensions are the width (w 3 ) of the first dielectric, 3 mm, the length of 3.5 mm, The length of the second dielectric is 1.5 mm, and the width of the second dielectric is the same as the width (w 3 ) of the first dielectric, and the exposed length of both ends of the signal wiring layer of the first dielectric Each thickness was 1.0 mm. Further, the shape of the void portion is set such that the width (w 1 ) is 1.5 mm and the length is 1.0 mm, and the thickness of the first dielectric (t 1 ) and the thickness of the void portion (t 2 ) are shown in Table 1. The input / output terminals changed as shown in FIG. The dielectric constant of the alumina ceramic after firing was 10.
[0042]
Next, a frame was joined to the surface of the bottom plate with silver solder, and a 2 mmφ through-hole was formed at a predetermined position on the side wall of the frame with a drill or punching metal. Then, the fixing member was joined to the side surface of the through hole forming portion by silver brazing, and the input / output terminal was disposed in the through hole formed on the other side wall of the frame body and joined by silver brazing. Further, the insulating base was joined to a predetermined position of the bottom plate with solder.
[0043]
The insulating base and the signal wiring layer of the input / output terminal are connected by wire bonding made of gold, and the signal wiring layer is made of an iron-nickel-cobalt alloy via an Ag-Cu solder, and has an outer surface. A lead terminal on which a nickel plating film and a gold plating film were formed was joined to the substrate.
[0044]
Furthermore, after the light receiving optical semiconductor element was mounted at a predetermined position on the side surface of the insulating base, a lid was joined to the upper surface of the frame by seam joining. Further, an optical fiber in which a TaN film, a Ni plating film, and an Au plating film are sequentially deposited on the outer peripheral surface near the tip is inserted into the through hole of the fixing member by vapor deposition, and the optical fiber and the fixing member are connected by solder. By bonding and fixing, an optical semiconductor element housing package was produced.
[0045]
With respect to the obtained optical package, a signal was input from an optical fiber, the rise time was measured by a photoelectric conversion pulse pattern measuring machine, and a sample no. The ratio (Tr ratio) of the rising value (Tr value) in each shape was calculated with the rising value of 1 as 100. Further, the dielectric constant of the dielectric (ε = 10), the thickness of the first dielectric (t 1 ), the thickness of the gap (t 2 ), the width of the signal wiring layer (0.5 mm), the width of the gap ( From the shape of w 1 = 1.5 mm), the effective dielectric constant of the first dielectric material including the void portion was calculated by simulation. The results are shown in Table 1.
[0046]
[Table 1]
Figure 0004771588
[0047]
As is clear from the results in Table 1, the sample No. In comparison with Samples 1 and 7, Sample No. 2 to 6, it was confirmed that the effective dielectric constant decreased and the Tr ratio was smaller than 100, that is, the rise time could be shortened.
[0048]
【The invention's effect】
According to the optical semiconductor storage package of the present invention, a capacitance component generated in the signal wiring layer is formed by forming a gap in the dielectric located immediately below the portion where the signal wiring layer of the input / output terminal is exposed. As a result of reducing the capacitance component of the entire package, the optical-electrical signal conversion speed can be improved, and the optical-electrical signal can be transmitted and received smoothly at high speed.
[0049]
[Brief description of the drawings]
FIG. 1 is a schematic cross-sectional view showing an example of a package for housing an optical semiconductor element of the present invention.
2 is a perspective view for explaining a structure of input / output terminals of the optical semiconductor element housing package of FIG. 1; FIG.
FIG. 3 is a schematic cross-sectional view of a conventional package for housing an optical semiconductor element.
[Explanation of symbols]
1. Optical semiconductor element storage package (optical package)
2... Bottom plate 2a .. Mounting substrate mounting portion 3... Optical semiconductor element (optical element)
DESCRIPTION OF SYMBOLS 4 ... Insulation base | substrate 5 ... Mounting board 7 ... Frame body 7a, 7b ... Through-hole 9 ... Cover body 10 ... Optical signal transmission line (optical line)
11. .. fixing member 11a .. through hole 13 .. bonding member 15 .. wire bonding 16 .. first dielectric 17 .. second dielectric 18 .. signal wiring layer 18a. Lead terminal 22, ground layer 24, input / output terminal 26, air gap

Claims (5)

上面に光半導体素子が搭載される搭載部を有する底板と、
前記光半導体素子搭載部を囲むように前記底板表面に取着される枠体と、
該枠体の側壁を貫通して形成されるか、または該枠体の側壁に配設された貫通孔に取着され、かつ内部に光信号の伝送線路を挿入するための貫通孔を有する筒状の固定部材と、
前記枠体を貫通して形成され、かつ表面に前記光半導体素子と電気的に接続される信号配線層を形成した第１の誘電体と、該第１の誘電体の信号配線層の両端が露出するように前記信号配線層を挟んで前記第１の誘電体と接合され、該第１の誘電体と前記枠体との間に配設される第２の誘電体と、前記第１の誘電体の前記信号配線層を形成した面と反対側の面に形成されたグランド層と、を備えた入出力端子と、
前記枠体の上面に取着され、前記光半導体素子を気密に封止する蓋体と、を具備する光半導体素子収納用パッケージであって、
前記第１の誘電体の前記信号配線層の露出部の直下に空隙部を形成したことを特徴とする光半導体素子収納用パッケージ。A bottom plate having a mounting portion on which an optical semiconductor element is mounted;
A frame attached to the bottom plate surface so as to surround the optical semiconductor element mounting portion;
A cylinder formed through the side wall of the frame or attached to a through-hole disposed in the side wall of the frame and having a through-hole for inserting an optical signal transmission line therein A fixing member having a shape;
A first dielectric formed through the frame and having a signal wiring layer electrically connected to the optical semiconductor element on the surface; and both ends of the signal wiring layer of the first dielectric across the signal wiring layer to expose is joined to the first dielectric, a second dielectric disposed between the frame member and the first dielectric, the first An input / output terminal comprising a ground layer formed on a surface opposite to the surface on which the signal wiring layer of the dielectric is formed ;
An optical semiconductor element storage package comprising: a lid attached to an upper surface of the frame body and hermetically sealing the optical semiconductor element;
A package for housing an optical semiconductor element, wherein a gap is formed immediately below the exposed portion of the signal wiring layer of the first dielectric. 前記空隙部を加味した前記第1の誘電体の実効誘電率が８以下であることを特徴とする
請求項１記載の光半導体素子収納用パッケージ。2. The optical semiconductor element housing package according to claim 1, wherein an effective dielectric constant of the first dielectric material including the gap is 8 or less. 前記第１の誘電体全体の厚み（ｔ１）に対する前記空隙部の厚み（ｔ２）の比（ｔ２／ｔ１）が０．１以上であることを特徴とする請求項１または２記載の光半導体素子収納用パッケージ。The ratio (t 2 / t 1 ) of the thickness (t 2 ) of the gap to the thickness (t 1 ) of the entire first dielectric is 0.1 or more. Package for optical semiconductor elements. 前記第１の誘電体全体の厚み（ｔ１）が０．２５〜１ｍｍであることを特徴とする請求項１乃至３のいずれか記載の光半導体素子収納用パッケージ。4. The package for housing an optical semiconductor element according to claim 1, wherein a thickness (t 1 ) of the entire first dielectric is 0.25 to 1 mm. 5. 前記信号配線層の幅（ｗ２）に対する前記空隙部の幅（ｗ１）の比（ｗ１／ｗ２）が２．５以上であることを特徴とする請求項１乃至４のいずれか記載の光半導体素子収納用パッケージ。5. The ratio (w 1 / w 2 ) of the width (w 1 ) of the gap portion to the width (w 2 ) of the signal wiring layer is 2.5 or more, 5. Package for optical semiconductor elements.
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