JP4759917B2 - 薄膜デバイスの製造方法、薄膜デバイスおよび液晶表示装置 - Google Patents
薄膜デバイスの製造方法、薄膜デバイスおよび液晶表示装置 Download PDFInfo
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- JP4759917B2 JP4759917B2 JP2003417458A JP2003417458A JP4759917B2 JP 4759917 B2 JP4759917 B2 JP 4759917B2 JP 2003417458 A JP2003417458 A JP 2003417458A JP 2003417458 A JP2003417458 A JP 2003417458A JP 4759917 B2 JP4759917 B2 JP 4759917B2
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- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 238000009751 slip forming Methods 0.000 description 3
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical group C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 2
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- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
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- 239000004593 Epoxy Substances 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
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- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000113 methacrylic resin Substances 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
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Images
Landscapes
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Description
上記工程により作製した薄膜デバイスは、TFT基板の線膨張係数が低いため、温度を上げてもクラック等は発生しない。
Claims (4)
- 第1基板上に、トランジスタを含む薄膜デバイス層を形成した後に前記薄膜デバイス層上に第1接着層を介してもしくは被覆層と第1接着層とを介して第2基板を接着する工程と、
化学処理および機械的研磨処理および紫外線照射処理の少なくとも一つの処理を含む工程により前記第1基板を完全または部分的に分離または除去する工程と、
前記薄膜デバイス層の第1基板が形成されていた側または部分的に残した第1基板に、第2接着層を介して、偏光板としての第3基板を接着する工程と、
前記第2基板を分離または除去する工程と
を備えた薄膜デバイスの製造方法において、
前記第3基板として、前記薄膜デバイス層側から順に、偏光子と、線膨張係数が20ppm/K以下であると共に複屈折を有する支持体とを有するものを用いる
薄膜デバイスの製造方法。 - 前記偏光子は1軸延伸して形成されたプラスチックフィルムよりなり、
前記支持体は2軸延伸して形成されたプラスチックフィルムよりなる
請求項1に記載の薄膜デバイスの製造方法。 - 第1基板上に、トランジスタを含む薄膜デバイス層を形成した後に前記薄膜デバイス層上に第1接着層を介してもしくは被覆層と第1接着層とを介して第2基板を接着する工程と、
化学処理および機械的研磨処理および紫外線照射処理の少なくとも一つの処理を含む工程により前記第1基板を完全または部分的に分離または除去する工程と、
前記薄膜デバイス層の第1基板が形成されていた側または部分的に残した第1基板に、第2接着層を介して、偏光板としての第3基板を接着する工程と、
前記第2基板を分離または除去する工程と
により製造される薄膜デバイスにおいて、
前記第3基板が、前記薄膜デバイス層側から順に、偏光子と、線膨張係数が20ppm/K以下であると共に複屈折を有する支持体とを有する
薄膜デバイス。 - 第1基板上に、トランジスタを含む薄膜デバイス層を形成した後に前記薄膜デバイス層上に第1接着層を介してもしくは被覆層と第1接着層とを介して第2基板を接着する工程と、
化学処理および機械的研磨処理および紫外線照射処理の少なくとも一つの処理を含む工程により前記第1基板を完全または部分的に分離または除去する工程と、
前記薄膜デバイス層の第1基板が形成されていた側または部分的に残した第1基板に、第2接着層を介して、偏光板としての第3基板を接着する工程と、
前記第2基板を分離または除去する工程と
により製造される薄膜デバイスを用いた液晶表示装置において、
前記第3基板が、前記薄膜デバイス層側から順に、偏光子と、線膨張係数が20ppm/K以下であると共に複屈折を有する支持体とを有する
液晶表示装置。
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Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100615222B1 (ko) * | 2004-06-17 | 2006-08-25 | 삼성에스디아이 주식회사 | 전계 발광 디스플레이 장치 및 이의 제조 방법 |
KR100824880B1 (ko) | 2006-11-10 | 2008-04-23 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 장치 및 그 제조 방법 |
KR100824881B1 (ko) | 2006-11-10 | 2008-04-23 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 장치 및 그 제조 방법 |
KR100824902B1 (ko) | 2006-12-13 | 2008-04-23 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 장치 및 그 제조 방법 |
JP5334236B2 (ja) * | 2007-07-25 | 2013-11-06 | 株式会社プライマテック | 電界効果型トランジスタ |
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US5376561A (en) * | 1990-12-31 | 1994-12-27 | Kopin Corporation | High density electronic circuit modules |
JP3915381B2 (ja) * | 2000-07-31 | 2007-05-16 | セイコーエプソン株式会社 | 液晶装置および電子機器 |
TW574753B (en) * | 2001-04-13 | 2004-02-01 | Sony Corp | Manufacturing method of thin film apparatus and semiconductor device |
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