JP4731760B2 - Vacuum processing apparatus and vacuum processing method - Google Patents

Vacuum processing apparatus and vacuum processing method Download PDF

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JP4731760B2
JP4731760B2 JP2001252894A JP2001252894A JP4731760B2 JP 4731760 B2 JP4731760 B2 JP 4731760B2 JP 2001252894 A JP2001252894 A JP 2001252894A JP 2001252894 A JP2001252894 A JP 2001252894A JP 4731760 B2 JP4731760 B2 JP 4731760B2
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vacuum processing
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JP2003068711A (en
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信 広津
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Description

【０００１】
【発明の属する技術分野】
本発明は、半導体ウエハ等の被処理基板に対して真空処理を行う真空処理装置および真空処理方法に関する。
【０００２】
【従来の技術】
例えば、半導体や液晶表示装置（ＬＣＤ）の製造工程においては、半導体ウエハやガラス基板等の被処理基板に対して、ドライエッチングやスパッタリング、ＣＶＤ（化学気相成長）等の種々の真空処理が施される。
【０００３】
図６は、半導体ウエハＷを被処理基板として真空処理を行う真空処理装置の概略的な断面図である。図６に示すように、真空処理装置は、気密に構成された真空処理室１０１と、この真空処理室１０１の底部から立設され、その上に半導体ウエハＷが載置される載置台１０２とを具備しており、また、真空処理室１０１には排気口１０３が設けられており、この排気口１０３には真空処理室１０１内のガスを排除するために真空ポンプ等の排気機構１０４が接続されている。このような構成において、装置構造上の都合、フットプリントおよび装置価格の観点から、排気口１０３は載置台１０２上に載置された半導体ウエハＷ中心に対して非対称に、例えば図６に示すように真空処理室１０１下方の片側一箇所に設けられる。
【０００４】
ところが、このように半導体ウエハＷ中心に対して非対称に排気口１０３が設けられた真空処理装置では、真空処理室１０１内の排気口１０３までの距離が近い部分Ｂと、排気口１０３までの距離が遠い部分Ｃとで、ガスの流れ方が変化してしまう。具体的には、部分Ｂの方が部分Ｃよりもガスの流れが速くなり、部分Ｃの方が部分Ｂよりもガスの圧力が高くなる。
【０００５】
このようなガスの流れや圧力の不均一性は、少なからずプロセスに悪影響を与えているものと考えられ、特にガスを多量に流すプロセスほどその悪影響は顕著になるものと考えられる。
【発明が解決しようとする課題】
【０００６】
本発明は、このような事情に鑑みてなされたものであって、真空処理室を排気する際のガスの流れや圧力を均一にすることができ、被処理基板に面内均一性の高い真空処理を施すことができる真空処理装置を提供することを目的とする。
【０００７】
【課題を解決するための手段】
上記課題を解決するために、本発明の第１の観点では、真空中で被処理基板に所定の処理を施す真空処理室と、前記真空処理室内に設けられ、被処理基板が載置される載置台と、前記真空処理室の下部に、その中央から偏った位置に設けられた排気口と、前記排気口に接続され、前記真空処理室の前記載置台上方部分に形成される処理空間を前記載置台と前記真空処理室の側壁とで規定される排気路を通って前記排気口から排気する排気機構と、前記真空処理室の周辺部の少なくとも前記排気口側および前記排気口と反対側との２箇所に設けられた複数の圧力計と、前記排気機構によって前記処理空間を排気する際に、前記複数の圧力計の測定値が略均等になるように前記排気路の開口分布を調整する開口調整部材とを具備し、前記開口調整部材は、前記載置台と前記真空処理室の側壁との間に、前記載置台に形成された溝に嵌め込まれた状態で前記排気路の前記排気口側とその反対側とに水平移動可能に設けられ、その移動により前記排気路の前記排気口側の開口とその反対側の開口とを調整し、それにより前記排気路の開口分布を調整することを特徴とする真空処理装置を提供する。
【０００８】
上記本発明の第１の観点によれば、前記処理空間の周辺部に複数の圧力計を設け、前記排気機構によって前記処理空間を排気する際に、これら圧力計の測定値が均等になるように開口調整部材によって前記排気路の開口分布を調整するので、前記真空処理室の下部に偏在した排気口から排気する方式でありながら、前記処理空間の周辺部における圧力が均等な状態を維持しつつ排気を行うことができる。したがって、真空処理室内のガスの流れや圧力を均一にして被処理基板に面内均一性の高い真空処理を施すことが可能となる。
【０００９】
さらに、本発明の第２の観点では、真空中で被処理基板に所定の処理を施す真空処理室と、前記真空処理室内に設けられ、被処理基板が載置される載置台と、前記真空処理室の下部にその中央から偏った位置に設けられた排気口と、前記排気口に接続され、前記真空処理室の前記載置台上方部分に形成される処理空間を前記載置台と前記真空処理室の側壁とで規定される排気路を通って前記排気口から排気する排気機構と、前記真空処理室の周辺部の少なくとも前記排気口側および前記排気口と反対側との２箇所に設けられた複数の圧力計と、前記載置台の周辺における前記排気路の開口分布を調整可能な開口調整部材と、前記開口調整部材を駆動する駆動機構と、前記排気機構によって前記処理空間を排気する際に、前記複数の圧力計の測定値に応じて前記駆動機構を制御する制御手段とを具備し、前記開口調整部材は、前記載置台と前記真空処理室の側壁との間に、前記載置台に形成された溝に嵌め込まれた状態で前記排気路の前記排気口側とその反対側とに水平移動可能に設けられ、その移動により前記排気路の前記排気口側の開口とその反対側の開口とを調整し、それにより前記排気路の開口分布を調整することを特徴とする真空処理装置を提供する。
【００１０】
上記本発明の第２の観点によれば、前記処理空間の周辺部に複数の圧力計を設け、前記排気機構で前記処理空間を排気する際に、前記複数の圧力計の測定値に応じて、開口調整部材を駆動する駆動機構を制御手段で制御するので、前記圧力計の測定値に応じて前記排気路の開口分布をリアルタイムで制御することができ、これにより真空処理室内のガスの流れや圧力を均一にして被処理基板に面内均一性の高い真空処理を施すことが可能となる。
【００１２】
さらに、本発明の第３の観点では、真空処理室と、前記真空処理室内に設けられ、被処理基板が載置される載置台と、前記真空処理室の下部にその中央から偏った位置に設けられた排気口と、前記排気口に接続され、前記真空処理室の前記載置台上方部分に形成される処理空間を前記載置台と前記真空処理室の側壁とで規定される排気路を通って前記排気口から排気して真空処理を行う真空処理装置を用いて被処理基板に真空処理を施す方法であって、前記載置台の周辺における前記排気路の開口分布を調整可能な開口調整部材として、前記載置台と前記真空処理室の側壁との間に前記載置台に形成された溝に嵌め込まれた状態で水平移動可能に設けられ、その移動により前記排気路の開口分布を調整するものを設け、少なくとも前記排気口側および前記排気口と反対側の２箇所に圧力計を設け、前記載置台上に被処理基板を載置し、前記処理空間を排気しつつ、前記圧力計により前記処理空間の少なくとも前記排気口側および前記排気口と反対側で圧力を測定し、少なくとも前記排気口側および前記排気口と反対側での圧力が略均等になるように、前記開口調整部材を前記排気路の前記排気口側とその反対側とで移動させて前記排気路の前記排気口側の開口とその反対側の開口とを調整することにより前記排気路の開口分布を調整して、前記被処理基板に真空処理を施すことを特徴とする真空処理方法を提供する。
【００１３】
上記本発明の第３の観点によれば、前記処理空間を排気しつつ前記処理空間の周辺部の複数箇所で圧力を測定し、前記複数箇所での圧力が略均等になるように前記排気路の開口分布を調整するので、真空処理室内のガスの流れや圧力を均一にして被処理基板に面内均一性の高い真空処理を施すことが可能となる。
【００１４】
【発明の実施の形態】
以下、本発明の実施の形態について説明する。
図１は、本発明の一実施形態に係る真空処理装置が適用されたプラズマエッチング装置の概略断面図であり、図２は図１のＡ−Ａ断面矢視図、図３の（ａ）および（ｂ）はこのプラズマエッチング装置における載置台の断面図である。
【００１５】
図１に示すように、このプラズマエッチング装置は、例えば表面がアルマイト処理（陽極酸化処理）されたアルミニウムからなり円筒状をなす真空処理室１と、この真空処理室１の底部から立設され、ウエハＷが載置される略円柱状の載置台２とを有している。真空処理室１内の載置台２上方には処理空間２０が形成されており、この処理空間２０下方の載置台２周辺には、載置台２と真空処理室１の側壁とで規定される排気路２１が形成されている。また、真空処理容器１の下部には、その中央から偏った位置に排気口４が設けられており、この排気口４には排気管５を介して真空ポンプ等の排気機構６が接続されている。したがって、排気路２１は、その上部で処理空間２０と連通しており、その下部で排気口４を介して排気管５と連通している。一方、載置台２には高周波電源１０が接続されており、これにより載置台２は下部電極として機能する。
【００１６】
図２および図３に示すように、上記載置台２の上部にはその周囲の全周にわたって溝２ａが水平に形成されており、この溝２ａには、円環状のバッフル板（開口調整部材）３が嵌め込まれている。このバッフル板３は、駆動機構７で駆動することによって、真空処理室１の排気口４側と排気口４の反対側とに水平移動可能となっている。例えば、バッフル板３を排気口４の方向に移動させた場合、載置台２の周辺における排気路２１の開口分布は、排気口４側で小さくなるとともに排気口４の反対側で大きくなる。図３の（ａ）にはバッフル板３を中心位置とした状態を示し、図３の（ｂ）にはバッフル板３を排気口４側に移動させた状態を示す。このようにして排気路２１の開口分布を変化させることにより、排気口４側とこれと反対側とのそれぞれの排気コンダクタンスを変化させることができ、これにより処理空間２０内の圧力分布を調整することができる。例えば、図３（ｂ）に示すようにバッフル板３を移動させた場合には、排気口４側の排気コンダクタンスを減少させてその部分の圧力を増大させるとともに、排気口４と反対側の排気コンダクタンスを増大させてその部分の圧力を減少させることができる。また、このようなバッフル板３を上下に貫通する孔部を設けてもよい。
【００１７】
真空処理室１の上部には、処理空間２０を挟んで載置台２と対向するように上部電極としてのシャワーヘッド１１が設けられている。このシャワーヘッド１１の下部は載置台２と平行に形成されており、その載置台２と対向する部分には複数のガス吐出孔１２が設けられている。また、シャワーヘッド１１の上部にはガス導入口１３が形成されており、このガス導入口１３には、エッチングガスとして例えばＣＦ４ガス等のハロゲン含有ガスやＨ２ガス等を導入するためのガス供給機構１４が接続され、これら処理ガスがガス導入口１３を経てシャワーヘッド１１の内部に至り、ガス吐出孔１２から真空処理室１内に吐出される。
【００１８】
また、このプラズマエッチング装置は、上述したように載置台２の上方に形成された処理空間２０周辺部の排気口４側およびこれと反対側の圧力を測定するための圧力計８および９を有しており、これらにより排気機構６によって処理空間２０を減圧する際に、排気口４側およびこれと反対側の圧力を個別に測定可能となっている。
【００１９】
以上のような構成のプラズマエッチング装置でウエハＷのエッチングを行う際には、まず、図示しないゲートバルブを開にしてウエハＷを真空処理室１内に搬入し、載置台２上に載置する。次いで、ガス供給機構１４から処理ガスの供給を開始してシャワーヘッド１１から真空処理室１内に処理ガスを供給するとともに、排気機構４を駆動して真空処理室１内を減圧する。この減圧時に、圧力計８および９により処理空間２０周辺部の排気口４側およびこれと反対側における圧力を測定しつつ、圧力計８および９の測定値が略均等となるように、駆動機構７によりバッフル板３を中央から移動させて排気路２１の開口分布を調整する。このようにバッフル板３を所定の位置に移動させて排気路２１の開口分布を調整するとともに真空処理室１内を所定の真空度に減圧した後、高周波電源１０から載置台２に高周波電力を供給して処理空間２０内に処理ガスのプラズマを発生させ、このプラズマによりウエハＷ上に形成された所定の膜をエッチングする。
【００２０】
上記のプロセスにおいて、従来の装置では、真空処理室１内を減圧する際に処理空間２０の排気口４側がこれと反対側よりも低圧になるという問題があった。これは、排気口４側の排気コンダクタンスがこれと反対側の排気コンダクタンスよりも大きいためである。これに対して本実施形態では、減圧時に圧力計８および９により処理空間２０周辺部の排気口４側およびこれと反対側の圧力を測定し、これらの測定値が略均等となるようにバッフル板３を移動させて排気路２１の開口分布を調整してからウエハＷの処理を行うので、真空処理室１内のガスの流れや圧力を均一にしてウエハＷに面内均一性の高い処理を施すことができる。このような効果は、特に、ガス供給機構１４からのガス供給量が多く真空処理室１内を流れるガスの量が多く、排気口４側で圧力が低くなりやすい場合に有効に発揮される。
【００２１】
また、ガス供給機構１４からのガス供給量等のプロセス条件が同一の場合には、圧力計８および９の測定値を略均等とするバッフル板３の位置は同じであると考えられる。したがって、ある装置で所定のプロセス条件の下で決定されたバッフル板３の位置データに基づいて、同じプロセスを行う他の装置のバッフル板３の位置を決定することも有効である。
【００２２】
さらに、上記のプロセスでは、バッフル板３を圧力計８および９の測定値が略均等となる位置に配置してからウエハＷの処理を行ったが、例えば図４に示すように、圧力計８および９の測定値に応じて駆動機構７をリアルタイムで制御する制御手段１５を設け、排気機構６による減圧時に圧力計８および９の測定値が略均等となるようにバッフル板３の位置をリアルタイムで制御するようにしてもよい。
【００２３】
なお、本発明は上記実施の形態に限られず、種々変更が可能である。例えば、上記実施形態ではバッフル板３を水平移動することによって排気路２１の開口分布を調節するようにしたが、図５の（ａ）〜（ｄ）に示すように、孔部２３を複数設けたバッフル板３′を用い、このバッフル板３′の下面側に孔部２３のそれぞれと連通可能な孔部２５が形成された部材２４を配置し、この部材２４を水平移動させて孔部２３および孔部２５の位置関係を調節することにより孔部２３のそれぞれを開閉又は開度制御するようにしてもよい。図５の（ａ）および（ｂ）は孔部２５と孔部２３とを連通させて孔部２３を全開にした状態の上面図および縦断面図であり、図５の（ｃ）および（ｄ）は孔部２３を孔部２５からずれた位置として孔部２３を半開にした状態の上面図および縦断面図である。また、孔部ではなくスリットを設けて、孔部の場合と同様に開閉又は開度制御するようにしてもよい。また、上記実施形態では本発明をプラズマエッチング装置に適用した場合を示したが、本発明はスパッタリング、ＣＶＤ（化学気相成長）等の種々の真空処理装置に適用することができる。さらに、被処理基板はウエハＷに限られず、例えばＬＣＤ用のガラス基板であってもよい。
【００２４】
【発明の効果】
以上説明したように、本発明によれば、前記処理空間の周辺部に複数の圧力計を設け、前記排気機構によって前記処理空間を排気する際に、これら圧力計の測定値が均等になるように開口調整部材によって前記排気路の開口分布を調整するので、前記真空処理室の下部に偏在した排気口から排気する方式でありながら、前記処理空間の周辺部における圧力が均等な状態を維持しつつ排気を行うことができる。したがって、真空処理室内のガスの流れや圧力を均一にして被処理基板に面内均一性の高い真空処理を施すことが可能となる。
【図面の簡単な説明】
【図１】本発明の第１の実施形態に係るプラズマエッチング装置の断面図。
【図２】図１のＡ−Ａ断面図。
【図３】図１における載置台およびバッフル板の説明図。
【図４】駆動機構をリアルタイムで制御する制御手段を設けたプラズマエッチング装置の断面図。
【図５】本発明の変形例におけるバッフル板の一部を示す図面。
【図６】従来の真空処理装置の一例を模式的に示す断面図。
【符号の説明】
１；真空処理室
２；載置台
２ａ；溝
３；バッフル板
４；排気口
５；排気管
６；排気機構
７；駆動機構
８，９；圧力計
１０；高周波電源
１１；シャワーヘッド
１２；ガス吐出孔
１３；ガス導入口
１４；ガス供給機構
１５；制御手段
２０；処理空間
２１；排気路
１０１；真空処理室
１０２；載置台
１０３；排気口
１０４；排気機構
Ｗ；半導体ウエハ[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a vacuum processing apparatus and a vacuum processing method for performing vacuum processing on a substrate to be processed such as a semiconductor wafer.
[0002]
[Prior art]
For example, in the manufacturing process of a semiconductor or a liquid crystal display (LCD), various vacuum processes such as dry etching, sputtering, and CVD (chemical vapor deposition) are performed on a substrate to be processed such as a semiconductor wafer or a glass substrate. Is done.
[0003]
FIG. 6 is a schematic cross-sectional view of a vacuum processing apparatus that performs vacuum processing using the semiconductor wafer W as a substrate to be processed. As shown in FIG. 6, the vacuum processing apparatus includes an airtight vacuum processing chamber 101, and a mounting table 102 erected from the bottom of the vacuum processing chamber 101 on which a semiconductor wafer W is mounted. In addition, an exhaust port 103 is provided in the vacuum processing chamber 101, and an exhaust mechanism 104 such as a vacuum pump is connected to the exhaust port 103 in order to exclude gas in the vacuum processing chamber 101. Has been. In such a configuration, the exhaust port 103 is asymmetric with respect to the center of the semiconductor wafer W mounted on the mounting table 102, for example, as shown in FIG. Is provided at one location on one side below the vacuum processing chamber 101.
[0004]
However, in the vacuum processing apparatus in which the exhaust port 103 is provided asymmetrically with respect to the center of the semiconductor wafer W in this way, the distance B to the exhaust port 103 in the vacuum processing chamber 101 and the distance B to the exhaust port 103 are short. However, the flow of the gas changes with the portion C which is far away. Specifically, the gas flow is faster in the portion B than in the portion C, and the gas pressure is higher in the portion C than in the portion B.
[0005]
Such non-uniformity of gas flow and pressure is considered to have an adverse effect on the process, and the adverse effect is considered to be more prominent in the process of flowing a large amount of gas.
[Problems to be solved by the invention]
[0006]
The present invention has been made in view of such circumstances, and can make the gas flow and pressure uniform when evacuating the vacuum processing chamber, and the substrate to be processed has a high in-plane uniformity. It aims at providing the vacuum processing apparatus which can process.
[0007]
[Means for Solving the Problems]
In order to solve the above problems, according to a first aspect of the present invention, a vacuum processing chamber that performs a predetermined process on a substrate to be processed in a vacuum, and the substrate to be processed are placed in the vacuum processing chamber. A mounting table, an exhaust port provided at a position deviated from the center thereof at a lower portion of the vacuum processing chamber, and a processing space connected to the exhaust port and formed in an upper portion of the mounting table described above. An exhaust mechanism that exhausts air from the exhaust port through an exhaust path defined by the mounting table and the side wall of the vacuum processing chamber, and at least the exhaust port side and the side opposite to the exhaust port in the periphery of the vacuum processing chamber When exhausting the processing space with the plurality of pressure gauges provided at two locations, and the exhaust mechanism, the opening distribution of the exhaust passage is adjusted so that the measured values of the plurality of pressure gauges are substantially uniform An opening adjusting member for adjusting the opening. Wood is between the side wall of the mounting table said vacuum processing chamber, a horizontally movably the exhaust port side and the opposite side of the exhaust passage in a state of being fitted in a groove formed in the mounting table Provided is a vacuum processing apparatus which is provided and adjusts the opening on the exhaust port side of the exhaust passage and the opening on the opposite side by the movement thereof, thereby adjusting the opening distribution of the exhaust passage.
[0008]
According to the first aspect of the present invention, when a plurality of pressure gauges are provided in the peripheral portion of the processing space and the processing space is exhausted by the exhaust mechanism, the measurement values of the pressure gauges are made uniform. Since the opening distribution of the exhaust passage is adjusted by the opening adjusting member, the pressure in the peripheral portion of the processing space is maintained at an even state while exhausting from the exhaust port unevenly distributed in the lower portion of the vacuum processing chamber. Exhaust can be performed. Accordingly, it is possible to perform vacuum processing with high in-plane uniformity on the substrate to be processed by making the gas flow and pressure in the vacuum processing chamber uniform.
[0009]
Furthermore, in the second aspect of the present invention, a vacuum processing chamber that performs a predetermined process on the substrate to be processed in a vacuum, a mounting table that is provided in the vacuum processing chamber and on which the substrate to be processed is mounted, and the vacuum An exhaust port provided in a lower part of the processing chamber at a position deviated from the center thereof, and a processing space connected to the exhaust port and formed in an upper portion of the mounting table above the vacuum processing chamber is defined by the mounting table and the vacuum processing. An exhaust mechanism for exhausting from the exhaust port through an exhaust path defined by the side wall of the chamber, and at least two locations on the periphery of the vacuum processing chamber, on the exhaust port side and on the opposite side of the exhaust port. A plurality of pressure gauges, an opening adjusting member capable of adjusting an opening distribution of the exhaust passage around the mounting table, a driving mechanism for driving the opening adjusting member, and when the processing space is exhausted by the exhaust mechanism. The measurement of the plurality of pressure gauges And a control means for controlling the drive mechanism in accordance with a value, the opening adjusting member is provided between the mounting table and the side wall of the vacuum processing chamber, fitted in a groove formed in the mounting table In the state, the exhaust passage is provided so as to be horizontally movable on the exhaust port side and the opposite side thereof, and by the movement, the opening on the exhaust port side of the exhaust passage and the opening on the opposite side thereof are adjusted. Provided is a vacuum processing apparatus characterized by adjusting an opening distribution of an exhaust passage.
[0010]
According to the second aspect of the present invention, when a plurality of pressure gauges are provided in a peripheral portion of the processing space and the processing space is exhausted by the exhaust mechanism, according to the measured values of the plurality of pressure gauges. Since the drive mechanism for driving the opening adjusting member is controlled by the control means, the opening distribution of the exhaust passage can be controlled in real time according to the measured value of the pressure gauge, and thereby the gas flow in the vacuum processing chamber In addition, it is possible to perform vacuum processing with high in-plane uniformity on the substrate to be processed by making the pressure uniform.
[0012]
Furthermore, in the third aspect of the present invention, a vacuum processing chamber, a mounting table provided in the vacuum processing chamber, on which a substrate to be processed is mounted, and a lower portion of the vacuum processing chamber are offset from the center. An exhaust port provided and a processing space connected to the exhaust port and formed in the upper portion of the mounting table above the vacuum processing chamber passes through an exhaust path defined by the mounting table and the side wall of the vacuum processing chamber. A vacuum processing apparatus for performing vacuum processing on a substrate to be processed using a vacuum processing apparatus that performs vacuum processing by exhausting from the exhaust port, wherein the opening adjusting member is capable of adjusting the distribution of the exhaust path around the mounting table. As described above, it is provided between the mounting table and the side wall of the vacuum processing chamber so as to be horizontally movable in a state of being fitted in a groove formed in the mounting table, and adjusting the opening distribution of the exhaust passage by the movement At least the exhaust port And pressure gauges at two locations opposite to the exhaust port, placing the substrate to be processed on the mounting table, and exhausting the processing space, the pressure gauge allows at least the exhaust port side of the processing space. And the pressure is measured on the side opposite to the exhaust port, and the opening adjusting member is placed on the exhaust port side of the exhaust path so that at least the pressure on the exhaust port side and the side opposite to the exhaust port is substantially equal. The substrate is subjected to vacuum processing by adjusting the opening distribution of the exhaust path by adjusting the opening on the exhaust port side of the exhaust path and the opening on the opposite side thereof by moving on the opposite side. A vacuum processing method is provided.
[0013]
According to the third aspect of the present invention, the exhaust path is configured such that pressure is measured at a plurality of locations around the processing space while exhausting the processing space, and the pressure at the plurality of locations is substantially equal. Therefore, it is possible to make the gas flow and pressure in the vacuum processing chamber uniform and perform vacuum processing with high in-plane uniformity on the substrate to be processed.
[0014]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below.
FIG. 1 is a schematic cross-sectional view of a plasma etching apparatus to which a vacuum processing apparatus according to an embodiment of the present invention is applied. FIG. 2 is a cross-sectional view taken along a line AA in FIG. (B) is sectional drawing of the mounting base in this plasma etching apparatus.
[0015]
As shown in FIG. 1, this plasma etching apparatus is erected from, for example, a vacuum processing chamber 1 having a cylindrical shape made of aluminum whose surface is anodized (anodized), and a bottom of the vacuum processing chamber 1, And a substantially cylindrical mounting table 2 on which the wafer W is mounted. A processing space 20 is formed above the mounting table 2 in the vacuum processing chamber 1, and an exhaust gas defined by the mounting table 2 and the side wall of the vacuum processing chamber 1 is disposed around the mounting table 2 below the processing space 20. A path 21 is formed. Further, an exhaust port 4 is provided at a position deviated from the center of the vacuum processing container 1, and an exhaust mechanism 6 such as a vacuum pump is connected to the exhaust port 4 via an exhaust pipe 5. Yes. Therefore, the exhaust path 21 communicates with the processing space 20 at the upper part thereof, and communicates with the exhaust pipe 5 through the exhaust port 4 at the lower part thereof. On the other hand, a high frequency power supply 10 is connected to the mounting table 2, whereby the mounting table 2 functions as a lower electrode.
[0016]
As shown in FIG. 2 and FIG. 3, a groove 2a is horizontally formed on the upper portion of the mounting table 2 over the entire circumference thereof, and an annular baffle plate (opening adjustment member) is formed in the groove 2a. 3 is fitted. The baffle plate 3 can be moved horizontally to the exhaust port 4 side of the vacuum processing chamber 1 and the opposite side of the exhaust port 4 by being driven by the drive mechanism 7. For example, when the baffle plate 3 is moved in the direction of the exhaust port 4, the opening distribution of the exhaust path 21 around the mounting table 2 decreases on the exhaust port 4 side and increases on the opposite side of the exhaust port 4. FIG. 3A shows a state where the baffle plate 3 is at the center position, and FIG. 3B shows a state where the baffle plate 3 is moved to the exhaust port 4 side. By changing the opening distribution of the exhaust passage 21 in this way, the exhaust conductance on the exhaust port 4 side and the opposite side can be changed, thereby adjusting the pressure distribution in the processing space 20. be able to. For example, when the baffle plate 3 is moved as shown in FIG. 3B, the exhaust conductance on the exhaust port 4 side is decreased to increase the pressure at that portion, and the exhaust on the opposite side to the exhaust port 4 The conductance can be increased to reduce the pressure at that portion. Moreover, you may provide the hole which penetrates such a baffle board 3 up and down.
[0017]
A shower head 11 as an upper electrode is provided on the upper part of the vacuum processing chamber 1 so as to face the mounting table 2 with the processing space 20 interposed therebetween. A lower portion of the shower head 11 is formed in parallel with the mounting table 2, and a plurality of gas discharge holes 12 are provided in a portion facing the mounting table 2. A gas inlet 13 is formed in the upper part of the shower head 11. A gas for introducing a halogen-containing gas such as CF 4 gas or H 2 gas as an etching gas into the gas inlet 13. A supply mechanism 14 is connected, and these processing gases reach the inside of the shower head 11 through the gas inlet 13 and are discharged into the vacuum processing chamber 1 from the gas discharge holes 12.
[0018]
In addition, the plasma etching apparatus includes pressure gauges 8 and 9 for measuring the pressure on the exhaust port 4 side and the opposite side of the periphery of the processing space 20 formed above the mounting table 2 as described above. Thus, when the processing space 20 is decompressed by the exhaust mechanism 6, the pressures on the exhaust port 4 side and the opposite side can be individually measured.
[0019]
When etching the wafer W with the plasma etching apparatus having the above configuration, first, a gate valve (not shown) is opened, and the wafer W is loaded into the vacuum processing chamber 1 and mounted on the mounting table 2. . Next, supply of the processing gas from the gas supply mechanism 14 is started to supply the processing gas from the shower head 11 into the vacuum processing chamber 1, and the exhaust mechanism 4 is driven to decompress the inside of the vacuum processing chamber 1. At the time of this pressure reduction, the pressure gauges 8 and 9 measure the pressure on the exhaust port 4 side in the periphery of the processing space 20 and on the opposite side, and the measured values of the pressure gauges 8 and 9 are substantially equal. 7, the baffle plate 3 is moved from the center to adjust the opening distribution of the exhaust passage 21. In this way, the baffle plate 3 is moved to a predetermined position to adjust the opening distribution of the exhaust passage 21 and the vacuum processing chamber 1 is depressurized to a predetermined degree of vacuum, and then high frequency power is applied from the high frequency power supply 10 to the mounting table 2. Then, a plasma of a processing gas is generated in the processing space 20, and a predetermined film formed on the wafer W is etched by this plasma.
[0020]
In the above-described process, the conventional apparatus has a problem that when the pressure in the vacuum processing chamber 1 is reduced, the pressure on the exhaust port 4 side of the processing space 20 becomes lower than that on the opposite side. This is because the exhaust conductance on the exhaust port 4 side is larger than the exhaust conductance on the opposite side. In contrast, in the present embodiment, the pressure gauges 8 and 9 measure the pressure on the exhaust port 4 side and the opposite side of the processing space 20 at the time of decompression, and the baffles so that these measured values are substantially equal. Since the wafer W is processed after the plate 3 is moved and the opening distribution of the exhaust passage 21 is adjusted, the gas flow and pressure in the vacuum processing chamber 1 are made uniform and the wafer W is processed with high in-plane uniformity. Can be applied. Such an effect is particularly effective when the amount of gas supplied from the gas supply mechanism 14 is large and the amount of gas flowing through the vacuum processing chamber 1 is large, and the pressure tends to decrease on the exhaust port 4 side.
[0021]
Further, when the process conditions such as the gas supply amount from the gas supply mechanism 14 are the same, the positions of the baffle plates 3 that make the measured values of the pressure gauges 8 and 9 substantially equal are considered to be the same. Therefore, it is also effective to determine the position of the baffle plate 3 of another device that performs the same process based on the position data of the baffle plate 3 determined under a predetermined process condition in a certain device.
[0022]
Further, in the above process, the wafer W is processed after the baffle plate 3 is arranged at a position where the measured values of the pressure gauges 8 and 9 are substantially equal. For example, as shown in FIG. And a control means 15 for controlling the drive mechanism 7 in real time according to the measured values of 9 and 9, and the position of the baffle plate 3 is adjusted in real time so that the measured values of the pressure gauges 8 and 9 are substantially equal when the exhaust mechanism 6 is depressurized. You may make it control by.
[0023]
The present invention is not limited to the above embodiment, and various modifications can be made. For example, in the above embodiment, the opening distribution of the exhaust passage 21 is adjusted by moving the baffle plate 3 horizontally, but a plurality of holes 23 are provided as shown in FIGS. The baffle plate 3 ′ is used, and a member 24 having holes 25 that can communicate with the holes 23 is disposed on the lower surface side of the baffle plate 3 ′. In addition, each of the holes 23 may be opened / closed or the degree of opening thereof may be controlled by adjusting the positional relationship between the holes 25. FIGS. 5A and 5B are a top view and a longitudinal sectional view of the state in which the hole portion 25 is communicated with the hole portion 23 to fully open the hole portion 23, and FIGS. ) Is a top view and a longitudinal sectional view of the state in which the hole 23 is half-opened with the hole 23 shifted from the hole 25. In addition, a slit may be provided instead of the hole, and the opening / closing or opening degree control may be performed as in the case of the hole. Moreover, although the case where this invention was applied to the plasma etching apparatus was shown in the said embodiment, this invention can be applied to various vacuum processing apparatuses, such as sputtering and CVD (chemical vapor deposition). Furthermore, the substrate to be processed is not limited to the wafer W, and may be a glass substrate for LCD, for example.
[0024]
【The invention's effect】
As described above, according to the present invention, when a plurality of pressure gauges are provided in the peripheral portion of the processing space and the processing space is exhausted by the exhaust mechanism, the measured values of the pressure gauges are equalized. Since the opening distribution of the exhaust passage is adjusted by the opening adjusting member, the pressure in the peripheral portion of the processing space is maintained at an even state while exhausting from the exhaust port unevenly distributed in the lower portion of the vacuum processing chamber. Exhaust can be performed. Accordingly, it is possible to perform vacuum processing with high in-plane uniformity on the substrate to be processed by making the gas flow and pressure in the vacuum processing chamber uniform.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a plasma etching apparatus according to a first embodiment of the present invention.
FIG. 2 is a cross-sectional view taken along line AA in FIG.
3 is an explanatory view of the mounting table and the baffle plate in FIG. 1. FIG.
FIG. 4 is a cross-sectional view of a plasma etching apparatus provided with control means for controlling a drive mechanism in real time.
FIG. 5 is a view showing a part of a baffle plate in a modified example of the present invention.
FIG. 6 is a cross-sectional view schematically showing an example of a conventional vacuum processing apparatus.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1; Vacuum processing chamber 2; Mounting base 2a; Groove 3; Baffle plate 4; Exhaust port 5; Exhaust pipe 6; Exhaust mechanism 7, Drive mechanism 8, 9; Hole 13; Gas inlet 14; Gas supply mechanism 15; Control means 20; Processing space 21; Exhaust path 101; Vacuum processing chamber 102;

Claims (3)

真空中で被処理基板に所定の処理を施す真空処理室と、
前記真空処理室内に設けられ、被処理基板が載置される載置台と、
前記真空処理室の下部に、その中央から偏った位置に設けられた排気口と、
前記排気口に接続され、前記真空処理室の前記載置台上方部分に形成される処理空間を前記載置台と前記真空処理室の側壁とで規定される排気路を通って前記排気口から排気する排気機構と、
前記真空処理室の周辺部の少なくとも前記排気口側および前記排気口と反対側との２箇所に設けられた複数の圧力計と、
前記排気機構によって前記処理空間を排気する際に、前記複数の圧力計の測定値が略均等になるように前記排気路の開口分布を調整する開口調整部材と
を具備し、
前記開口調整部材は、前記載置台と前記真空処理室の側壁との間に、前記載置台に形成された溝に嵌め込まれた状態で前記排気路の前記排気口側とその反対側とに水平移動可能に設けられ、その移動により前記排気路の前記排気口側の開口とその反対側の開口とを調整し、それにより前記排気路の開口分布を調整することを特徴とする真空処理装置。A vacuum processing chamber for performing predetermined processing on the substrate to be processed in vacuum;
A mounting table provided in the vacuum processing chamber and on which a substrate to be processed is mounted;
In the lower part of the vacuum processing chamber, an exhaust port provided at a position deviated from the center,
A processing space connected to the exhaust port and formed in the upper part of the mounting table above the vacuum processing chamber is exhausted from the exhaust port through an exhaust path defined by the mounting table and a side wall of the vacuum processing chamber. An exhaust mechanism;
A plurality of pressure gauges provided in at least two locations on the periphery of the vacuum processing chamber, on the exhaust port side and on the opposite side of the exhaust port;
An opening adjusting member that adjusts the opening distribution of the exhaust passage so that the measured values of the plurality of pressure gauges are substantially equal when the processing space is exhausted by the exhaust mechanism;
The opening adjusting member is horizontally placed between the exhaust port side of the exhaust path and the opposite side in a state of being fitted in a groove formed in the mount table between the mounting table and the side wall of the vacuum processing chamber. A vacuum processing apparatus, wherein the vacuum processing apparatus is provided so as to be movable, and adjusts an opening on the exhaust port side of the exhaust passage and an opening on the opposite side by the movement, thereby adjusting an opening distribution of the exhaust passage. 真空中で被処理基板に所定の処理を施す真空処理室と、
前記真空処理室内に設けられ、被処理基板が載置される載置台と、
前記真空処理室の下部にその中央から偏った位置に設けられた排気口と、
前記排気口に接続され、前記真空処理室の前記載置台上方部分に形成される処理空間を前記載置台と前記真空処理室の側壁とで規定される排気路を通って前記排気口から排気する排気機構と、
前記真空処理室の周辺部の少なくとも前記排気口側および前記排気口と反対側との２箇所に設けられた複数の圧力計と、
前記載置台の周辺における前記排気路の開口分布を調整可能な開口調整部材と、
前記開口調整部材を駆動する駆動機構と、
前記排気機構によって前記処理空間を排気する際に、前記複数の圧力計の測定値に応じて前記駆動機構を制御する制御手段と
を具備し、
前記開口調整部材は、前記載置台と前記真空処理室の側壁との間に、前記載置台に形成された溝に嵌め込まれた状態で前記排気路の前記排気口側とその反対側とに水平移動可能に設けられ、その移動により前記排気路の前記排気口側の開口とその反対側の開口とを調整し、それにより前記排気路の開口分布を調整することを特徴とする真空処理装置。A vacuum processing chamber for performing predetermined processing on the substrate to be processed in vacuum;
A mounting table provided in the vacuum processing chamber and on which a substrate to be processed is mounted;
An exhaust port provided at a position deviated from the center at the lower part of the vacuum processing chamber;
A processing space connected to the exhaust port and formed in the upper part of the mounting table above the vacuum processing chamber is exhausted from the exhaust port through an exhaust path defined by the mounting table and a side wall of the vacuum processing chamber. An exhaust mechanism;
A plurality of pressure gauges provided in at least two locations on the periphery of the vacuum processing chamber, on the exhaust port side and on the opposite side of the exhaust port;
An opening adjusting member capable of adjusting an opening distribution of the exhaust passage around the mounting table;
A drive mechanism for driving the opening adjusting member;
Control means for controlling the drive mechanism according to the measured values of the plurality of pressure gauges when the processing space is exhausted by the exhaust mechanism;
The opening adjusting member is horizontally placed between the exhaust port side of the exhaust path and the opposite side in a state of being fitted in a groove formed in the mount table between the mounting table and the side wall of the vacuum processing chamber. A vacuum processing apparatus, wherein the vacuum processing apparatus is provided so as to be movable, and adjusts an opening on the exhaust port side of the exhaust passage and an opening on the opposite side by the movement, thereby adjusting an opening distribution of the exhaust passage. 真空処理室と、前記真空処理室内に設けられ、被処理基板が載置される載置台と、前記真空処理室の下部にその中央から偏った位置に設けられた排気口と、前記排気口に接続され、前記真空処理室の前記載置台上方部分に形成される処理空間を前記載置台と前記真空処理室の側壁とで規定される排気路を通って前記排気口から排気して真空処理を行う真空処理装置を用いて被処理基板に真空処理を施す方法であって、
前記載置台の周辺における前記排気路の開口分布を調整可能な開口調整部材として、前記載置台と前記真空処理室の側壁との間に前記載置台に形成された溝に嵌め込まれた状態で水平移動可能に設けられ、その移動により前記排気路の開口分布を調整するものを設け、
少なくとも前記排気口側および前記排気口と反対側の２箇所に圧力計を設け、
前記載置台上に被処理基板を載置し、前記処理空間を排気しつつ、前記圧力計により前記処理空間の少なくとも前記排気口側および前記排気口と反対側で圧力を測定し、少なくとも前記排気口側および前記排気口と反対側での圧力が略均等になるように、前記開口調整部材を前記排気路の前記排気口側とその反対側とで移動させて前記排気路の前記排気口側の開口とその反対側の開口とを調整することにより前記排気路の開口分布を調整して、前記被処理基板に真空処理を施すことを特徴とする真空処理方法。A vacuum processing chamber, a mounting table provided in the vacuum processing chamber on which a substrate to be processed is mounted, an exhaust port provided at a position deviated from the center at a lower portion of the vacuum processing chamber, and an exhaust port A vacuum treatment is performed by exhausting the processing space formed in the upper part of the mounting table above the vacuum processing chamber from the exhaust port through an exhaust path defined by the mounting table and the side wall of the vacuum processing chamber. A method of performing vacuum processing on a substrate to be processed using a vacuum processing apparatus to perform,
As an opening adjusting member capable of adjusting the opening distribution of the exhaust passage in the periphery of the mounting table, it is horizontally fitted in a groove formed in the mounting table between the mounting table and the side wall of the vacuum processing chamber. Provided to be movable, and to adjust the opening distribution of the exhaust passage by the movement,
Pressure gauges are provided at least at two locations on the exhaust port side and on the opposite side of the exhaust port,
The substrate to be processed is placed on the mounting table, and the pressure is measured at least on the exhaust port side and the exhaust port side of the processing space by the pressure gauge while exhausting the processing space, and at least the exhaust The opening adjustment member is moved between the exhaust port side of the exhaust passage and the opposite side thereof so that the pressure on the mouth side and the side opposite to the exhaust port becomes substantially equal, and the exhaust port side of the exhaust passage A vacuum processing method comprising: adjusting an opening distribution of the exhaust passage by adjusting an opening of the substrate and an opening on the opposite side, and subjecting the substrate to be processed to vacuum processing.
JP2001252894A 2001-08-23 2001-08-23 Vacuum processing apparatus and vacuum processing method Expired - Fee Related JP4731760B2 (en)

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JP7229016B2 (en) * 2018-12-27 2023-02-27 キヤノントッキ株式会社 Film forming apparatus, film forming method, and electronic device manufacturing method
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