JP4714006B2 - Surface acoustic wave device and manufacturing method thereof - Google Patents

Surface acoustic wave device and manufacturing method thereof Download PDF

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JP4714006B2
JP4714006B2 JP2005331532A JP2005331532A JP4714006B2 JP 4714006 B2 JP4714006 B2 JP 4714006B2 JP 2005331532 A JP2005331532 A JP 2005331532A JP 2005331532 A JP2005331532 A JP 2005331532A JP 4714006 B2 JP4714006 B2 JP 4714006B2
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JP2007142636A (en
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文広 芝
博美 谷津田
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Japan Radio Co Ltd
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Description

本発明は、例えば移動体通信機器に搭載されるフィルタなどの弾性表面波デバイスに用いられる弾性表面波素子及びその製造方法に関する。   The present invention relates to a surface acoustic wave element used for a surface acoustic wave device such as a filter mounted on a mobile communication device, for example, and a manufacturing method thereof.

一般に、例えば携帯電話機などの移動体通信機器に搭載される弾性表面波フィルタを代表とした弾性表面波デバイスは、圧電基板の表面を伝搬する弾性表面波を利用するため、この弾性表面波の伝搬領域や、弾性表面波を励振する櫛型電極に水分や埃が付着しないように、櫛型電極や弾性表面波の伝搬領域が保護された構成となっている。   In general, a surface acoustic wave device represented by a surface acoustic wave filter mounted on a mobile communication device such as a mobile phone uses a surface acoustic wave that propagates on the surface of a piezoelectric substrate. The comb electrode and the surface acoustic wave propagation region are protected so that moisture and dust do not adhere to the region and the comb electrode that excites the surface acoustic wave.

下記特許文献１には、実装基板に、金属バンプにより、弾性表面波素子をフェイスダウン実装し、このように実装された弾性表面波素子の全体を樹脂フィルムで覆い、実装基板の実装面と樹脂フィルムとを密着させてなる弾性表面波デバイスが記載されている。この弾性表面波デバイスでは、実装基板と弾性表面波素子との間の空間（すなわち、櫛型電極や弾性表面波の伝搬領域が存在する空間）が樹脂フィルムによって封止されることで、櫛型電極や弾性表面波の伝搬領域が保護されている。   In the following Patent Document 1, a surface acoustic wave element is mounted face-down on a mounting board with metal bumps, and the entire surface acoustic wave element mounted in this manner is covered with a resin film. A surface acoustic wave device in which a film is brought into close contact is described. In this surface acoustic wave device, the space between the mounting substrate and the surface acoustic wave element (that is, the space where the comb-shaped electrode and the surface acoustic wave propagation region exist) is sealed with a resin film, so that the comb-shaped The electrode and the surface acoustic wave propagation region are protected.

下記特許文献２には、圧電基板上に少なくとも１つのくし型電極部からなる機能部分（くし型電極部などの弾性表面波が伝搬する表面部分）を有する弾性表面波素子において機能部分の周囲に保護部材（機能部分の周囲を囲う側壁のようなもの）を形成し、この機能部分と保護部材とを覆うようにして保護フィルムを圧電基板に接着した上で、この弾性表面波素子を、くし型電極部を有する面を対向させて実装基板にバンプを介して接合してなる弾性表面波デバイスが記載されている。この弾性表面波デバイスでは、機能部分と保護部材とを覆うようにして保護フィルムを圧電基板に接着して機能部分（櫛型電極や弾性表面波の伝搬領域に相当）が封止されることで、櫛型電極や弾性表面波の伝搬領域が保護されている。   In the following Patent Document 2, a surface acoustic wave element having a functional portion (a surface portion on which a surface acoustic wave propagates such as a comb electrode portion) including at least one comb electrode portion on a piezoelectric substrate is provided around the functional portion. A protective member (such as a side wall surrounding the functional part) is formed, a protective film is adhered to the piezoelectric substrate so as to cover the functional part and the protective member, and then the surface acoustic wave element is combed. A surface acoustic wave device is described in which a surface having a mold electrode portion is opposed to and bonded to a mounting substrate via a bump. In this surface acoustic wave device, the functional part (corresponding to the comb electrode or the surface acoustic wave propagation region) is sealed by adhering a protective film to the piezoelectric substrate so as to cover the functional part and the protective member. The comb-shaped electrode and the surface acoustic wave propagation region are protected.

特開２００５−１８４３０９号公報JP 2005-184309 A 特開２００４−１５３４１２号公報Japanese Patent Laid-Open No. 2004-153212

上記の従来の技術は、いずれも実装基板と弾性表面波素子とを組み合わせた（実装させた）状態で、櫛型電極や弾性表面波の伝搬領域の確実な保護（パッケージング）が実現されている。特許文献１に記載の弾性表面波デバイスでは、実装基板にフェイスダウン実装された弾性表面波素子の全体を樹脂フィルムで覆い、実装基板の実装面と樹脂フィルムとを密着させることで、実装基板と弾性表面波素子との間の空間（すなわち、櫛型電極や弾性表面波の伝搬領域が存在する空間）を樹脂フィルムによって封止し、櫛型電極や弾性表面波の伝搬領域を保護している。   In each of the above conventional techniques, the mounting substrate and the surface acoustic wave element are combined (mounted), and the comb electrode and the surface acoustic wave propagation region are reliably protected (packaging). Yes. In the surface acoustic wave device described in Patent Document 1, the entire surface acoustic wave element mounted face-down on the mounting substrate is covered with a resin film, and the mounting surface of the mounting substrate and the resin film are brought into close contact with each other. The space between the surface acoustic wave element (that is, the space where the comb electrode and the surface acoustic wave propagation region exist) is sealed with a resin film to protect the comb electrode and the surface acoustic wave propagation region. .

また、特許文献２に記載の弾性表面波デバイスでは、機能部分（櫛型電極や弾性表面波の伝搬領域）と保護部材とを覆うようにして保護フィルムを圧電基板に接着して機能部分を封止することで、機能部分（櫛型電極や弾性表面波の伝搬領域）を保護している。このとき、保護部材（機能部分の周囲を囲う側壁のようなもの）を保護フィルムで覆っただけでは、この保護フィルムが撓んでしまい、弾性表面波素子の姿勢によっては撓んだ保護フィルムが機能部分に触れてしまうといった事態が生じる虞がある。そこで、特許文献２に記載の弾性表面波デバイスでは、この弾性表面波素子を、弾性表面波素子の下側に位置する実装基板に、くし型電極部を有する面を対向させた状態でバンプを介して接合することで、保護フィルムの撓みによる不都合を解消し、かつ保護フィルムによって機能部分（櫛型電極や弾性表面波の伝搬領域）を保護している。   In the surface acoustic wave device described in Patent Document 2, the protective film is adhered to the piezoelectric substrate so as to cover the functional part (comb electrode or surface acoustic wave propagation region) and the protective member, thereby sealing the functional part. By stopping, the functional portion (comb electrode or surface acoustic wave propagation region) is protected. At this time, simply covering the protective member (such as the side wall surrounding the functional part) with a protective film will cause the protective film to bend, and depending on the orientation of the surface acoustic wave element, the bent protective film will function. There is a possibility that a situation such as touching a part may occur. Therefore, in the surface acoustic wave device described in Patent Document 2, the surface acoustic wave element is bumped with the mounting substrate positioned below the surface acoustic wave element facing the surface having the comb-shaped electrode portion. Thus, the problem caused by the bending of the protective film is eliminated, and the functional part (comb electrode or surface acoustic wave propagation region) is protected by the protective film.

以上のように、従来では、実装基板と弾性表面波素子とを組み合わせた（実装させた）状態で、弾性表面波デバイスとして、櫛型電極や弾性表面波の伝搬領域の確実な保護（パッケージング）を実現させている。ここで、弾性表面波素子側のみにおいて、櫛型電極や弾性表面波の伝搬領域の確実な保護（パッケージング）を実現できれば、弾性表面波素子のベアチップ供給を行うことが可能となり、実装基板への実装工程が簡易になる等、有利な効果が得られることから、このような弾性表面波素子側のみでの櫛型電極や弾性表面波の伝搬領域の確実な保護（パッケージング）がなされることは非常に好ましい。   As described above, conventionally, as a surface acoustic wave device in a state where the mounting substrate and the surface acoustic wave element are combined (mounted), reliable protection of the comb-shaped electrode and the propagation area of the surface acoustic wave (packaging) ) Is realized. Here, if reliable protection (packaging) of the comb-shaped electrode and the propagation region of the surface acoustic wave can be realized only on the surface acoustic wave element side, it becomes possible to supply the bare chip of the surface acoustic wave element to the mounting substrate. Since the advantageous effects such as simplification of the mounting process can be obtained, the comb-shaped electrode and the surface acoustic wave propagation region can be reliably protected (packaging) only on the surface acoustic wave element side. It is very preferable.

そこで本発明の目的は、上記従来技術の問題に鑑み、櫛型電極や弾性表面波の伝搬領域が確実に保護（パッケージング）された弾性表面波素子及びその製造方法を提供することにある。   Accordingly, an object of the present invention is to provide a surface acoustic wave element in which a comb-shaped electrode and a surface acoustic wave propagation region are reliably protected (packaged) and a method for manufacturing the same.

上記目的を達成するため、本発明の弾性表面波素子は、圧電基板と、圧電基板上に形成された櫛形電極と、櫛形電極から圧電基板の表面及び表面近傍を伝搬する弾性表面波の伝搬領域と、を有する弾性表面波素子において、櫛形電極及び弾性表面波の伝搬領域が収容される空間を形成して、櫛形電極及び弾性表面波の伝搬領域を覆う蓋体を圧電基板上に有し、蓋体が、櫛形電極及び弾性表面波の伝搬領域が収容される空間を形成して、櫛形電極及び弾性表面波の伝搬領域を覆うように跨ぐブリッジ状の蓋体部と、ブリッジ状の蓋体部を覆い、櫛形電極及び弾性表面波の伝搬領域が収容される空間を密封するフィルムと、からなる二重構造となっていることを特徴とする。 In order to achieve the above object, a surface acoustic wave device according to the present invention includes a piezoelectric substrate, a comb electrode formed on the piezoelectric substrate, and a surface acoustic wave propagation region propagating from the comb electrode to the surface of the piezoelectric substrate and the vicinity of the surface. And forming a space for accommodating the comb electrode and the surface acoustic wave propagation region on the piezoelectric substrate, and covering the comb electrode and the surface acoustic wave propagation region on the piezoelectric substrate. The lid forms a space in which the comb-shaped electrode and the surface acoustic wave propagation region are accommodated, and bridges over the comb-shaped electrode and the surface acoustic wave propagation region, and the bridge-shaped lid It has a double structure comprising a film covering the part and sealing a space in which a comb-shaped electrode and a surface acoustic wave propagation region are accommodated .

また、本発明の弾性表面波素子は、圧電基板と、圧電基板上に形成された櫛形電極と、櫛形電極から圧電基板の表面及び表面近傍を伝搬する弾性表面波の伝搬領域と、を有する弾性表面波素子において、櫛形電極及び弾性表面波の伝搬領域が収容される空間を形成して、櫛形電極及び弾性表面波の伝搬領域を覆う蓋体を圧電基板上に有し、蓋体が、櫛形電極及び弾性表面波の伝搬領域が収容される空間を形成して、櫛形電極及び弾性表面波の伝搬領域を覆うように跨ぐブリッジ状の第一の蓋体部と、第一の蓋体部を覆い、櫛形電極及び弾性表面波の伝搬領域が収容される空間を密封するフィルムと、フィルムによって覆われた第一の蓋体部を覆う第二の蓋体部と、からなる三重構造となっていることを特徴とする。
The surface acoustic wave device of the present invention includes a piezoelectric substrate, a comb-shaped electrode formed on the piezoelectric substrate, and a surface acoustic wave propagation region that propagates from the comb-shaped electrode to the surface of the piezoelectric substrate and the vicinity of the surface. In the surface acoustic wave device, a space for accommodating the comb-shaped electrode and the surface acoustic wave propagation region is formed on the piezoelectric substrate, and the lid body covers the comb-shaped electrode and the surface acoustic wave propagation region. Forming a space in which the electrode and the surface acoustic wave propagation region are accommodated, and a bridge-shaped first lid portion covering the comb electrode and the surface acoustic wave propagation region, and a first lid portion A triple structure consisting of a film that seals the space in which the comb electrode and the surface acoustic wave propagation region are accommodated, and a second lid that covers the first lid that is covered with the film. It is characterized by being.

ここで、上記構成の弾性表面波素子において、圧電基板上に、蓋体の外部に配置された電極パッドと、電極パッドと櫛型電極とを接続する電極パターンと、が形成され、さらに電極パッド上にはバンプが形成されるようにしても良い。   Here, in the surface acoustic wave device having the above configuration, an electrode pad disposed outside the lid body and an electrode pattern connecting the electrode pad and the comb-shaped electrode are formed on the piezoelectric substrate, and the electrode pad is further formed. Bumps may be formed on the top.

また、本発明の弾性表面波素子の製造方法は、櫛形電極と、櫛形電極から圧電基板の表面及び表面近傍を伝搬する弾性表面波の伝搬領域と、を有する弾性表面波素子が複数形成された圧電基板に対し、櫛形電極及び弾性表面波の伝搬領域が収容される空間を形成し、櫛形電極及び弾性表面波の伝搬領域を覆うように跨ぐブリッジ状の蓋体部を、各弾性表面波素子ごとに個別に形成する蓋体部形成工程と、各弾性表面波素子に形成されたブリッジ状の蓋体部をフィルムで覆い、各弾性表面波素子における櫛形電極及び弾性表面波の伝搬領域が収容される空間を個別に密封する密封工程と、を有することを特徴とする。あるいは、櫛形電極と、櫛形電極から圧電基板の表面及び表面近傍を伝搬する弾性表面波の伝搬領域と、を有する弾性表面波素子が複数形成された圧電基板に対し、櫛形電極及び弾性表面波の伝搬領域が収容される空間を形成し、櫛形電極及び弾性表面波の伝搬領域を覆うように跨ぐブリッジ状の第一の蓋体部を、各弾性表面波素子ごとに個別に形成する第一蓋体部形成工程と、各弾性表面波素子に形成された第一の蓋体部をフィルムで覆い、各弾性表面波素子における櫛形電極及び弾性表面波の伝搬領域が収容される空間を個別に密封する密封工程と、各弾性表面波素子におけるフィルムで覆われた第一の蓋体部を覆う第二の蓋体部を、各弾性表面波素子ごとに個別に形成する第二蓋体部形成工程と、を有することを特徴とする。   The surface acoustic wave element manufacturing method of the present invention includes a plurality of surface acoustic wave elements each having a comb-shaped electrode and a surface acoustic wave propagation region propagating from the comb-shaped electrode to the surface of the piezoelectric substrate and the vicinity of the surface. Each surface acoustic wave element has a bridge-shaped lid that forms a space in which a comb electrode and a surface acoustic wave propagation region are accommodated, and covers the comb electrode and the surface acoustic wave propagation region. The lid part forming step formed individually for each surface and the bridge-like lid part formed on each surface acoustic wave element are covered with a film, and the comb-shaped electrode and the surface acoustic wave propagation area in each surface acoustic wave element are accommodated And a sealing process for individually sealing the spaces to be formed. Alternatively, the comb-shaped electrode and the surface acoustic wave may be applied to a piezoelectric substrate having a plurality of surface acoustic wave elements each having a comb-shaped electrode and a surface acoustic wave propagation region propagating from the comb-shaped electrode to the surface of the piezoelectric substrate and the vicinity of the surface. A first lid that forms a space in which a propagation region is accommodated and that individually forms a bridge-shaped first lid portion covering the comb-shaped electrode and the surface acoustic wave propagation region for each surface acoustic wave element The body part forming step and the first lid part formed on each surface acoustic wave element are covered with a film, and the space in which the comb-shaped electrode and the surface acoustic wave propagation area in each surface acoustic wave element are accommodated is individually sealed. Sealing step, and a second lid part forming step for individually forming a second lid part covering the first lid part covered with the film in each surface acoustic wave element for each surface acoustic wave element It is characterized by having.

ここで、上記構成の弾性表面波素子の製造方法において、ブリッジ状の蓋体部を形成する工程は、各弾性表面波素子における櫛型電極および弾性表面波の伝搬領域の上に被さるように、犠牲層を各弾性表面波素子ごとに個別に形成する工程と、各犠牲層の上を跨ぐように樹脂を塗布して硬化させる工程と、犠牲層エッチングにより各犠牲層を除去する工程と、を有し、各犠牲層の除去により、櫛形電極及び弾性表面波の伝搬領域が収容される空間を形成し、櫛形電極及び弾性表面波の伝搬領域を覆うように跨ぐブリッジ状の蓋体部が、各弾性表面波素子ごとに個別に形成されるようにすると良い。   Here, in the method of manufacturing the surface acoustic wave element having the above-described configuration, the step of forming the bridge-shaped lid body portion covers the comb-shaped electrode and the surface acoustic wave propagation region in each surface acoustic wave element. A step of individually forming a sacrificial layer for each surface acoustic wave element, a step of applying and curing a resin so as to straddle each sacrificial layer, and a step of removing each sacrificial layer by sacrificial layer etching. Each of the sacrificial layers is removed to form a space in which the comb-shaped electrode and the surface acoustic wave propagation region are accommodated, and a bridge-shaped lid that covers the comb-shaped electrode and the surface acoustic wave propagation region. It is preferable to form each surface acoustic wave element individually.

また、上記構成の弾性表面波素子の製造方法において、ブリッジ状の蓋体部を形成するための樹脂には、光感光性樹脂を用い、犠牲層には、光感光性樹脂の硬化温度に耐え得る耐熱性を有し、且つ有機溶剤によって除去可能なレジストを用い、有機溶剤を用いて犠牲層エッチングを行うことにより犠牲層を除去するようにすると良い。   In the method of manufacturing the surface acoustic wave device having the above-described structure, a photosensitive resin is used as the resin for forming the bridge-shaped lid, and the sacrificial layer can withstand the curing temperature of the photosensitive resin. It is preferable that the sacrificial layer be removed by performing a sacrificial layer etching using an organic solvent using a resist having heat resistance that can be obtained and removed by an organic solvent.

さらに、上記構成の弾性表面波素子の製造方法において、ブリッジ状の蓋体部を覆うフィルムには、ドライフィルムレジストを用いるようにすると良い。   Furthermore, in the method for manufacturing the surface acoustic wave element having the above-described configuration, a dry film resist may be used for the film covering the bridge-shaped lid.

本発明の弾性表面波素子によれば、弾性表面波素子側のみにおいて、櫛型電極や弾性表面波の伝搬領域の確実な保護（パッケージング）を実現できる。したがって、弾性表面波素子のベアチップ供給を行うことが可能となり、実装基板への実装工程が簡易になる、または、弾性表面波素子の取扱いがし易くなる、等といった有利な効果が得られるようになる。   According to the surface acoustic wave element of the present invention, reliable protection (packaging) of the comb-shaped electrode and the propagation area of the surface acoustic wave can be realized only on the surface acoustic wave element side. Therefore, it becomes possible to supply the bare chip of the surface acoustic wave element, and it is possible to obtain an advantageous effect that the mounting process on the mounting substrate is simplified or the surface acoustic wave element is easily handled. Become.

本発明の実施の形態における弾性表面波素子は、圧電基板１０上の櫛型電極及び弾性表面波の伝搬領域１２を蓋体によって封止した構成を有しており、これにより、実装基板との関係如何にかかわらず、弾性表面波素子側において櫛型電極及び弾性表面波の伝搬領域１２を確実に保護（パッケージング）している。例えば、図５のように、櫛形電極及び弾性表面波の伝搬領域１２が収容される空間を形成した状態でこの櫛形電極及び弾性表面波の伝搬領域１２を跨いだブリッジ状の蓋体部１４をフィルム１６で覆うことにより、櫛形電極及び弾性表面波の伝搬領域１２が収容される空間を密封し、ブリッジ状の蓋体部１４及びフィルム１６の二重構造からなる蓋体を形成し、この二重構造の蓋体によって、弾性表面波素子において櫛型電極及び弾性表面波の伝搬領域１２を確実に保護している。あるいは、図６のように、櫛形電極及び弾性表面波の伝搬領域１２が収容される空間を形成した状態でこの櫛形電極及び弾性表面波の伝搬領域１２を跨いだブリッジ状の蓋体部（第一の蓋体部）１４をフィルム１６で覆うことにより、櫛形電極及び弾性表面波の伝搬領域１２が収容される空間を密封し、さらにフィルム１６の外側から第二の蓋体部１８で覆うことにより、第一の蓋体部１４、フィルム１６及び第二の蓋体部１８の三重構造からなる蓋体を形成し、この三重構造の蓋体によって、弾性表面波素子において櫛型電極及び弾性表面波の伝搬領域１２を確実に保護している。   The surface acoustic wave element according to the embodiment of the present invention has a configuration in which the comb-shaped electrode on the piezoelectric substrate 10 and the surface acoustic wave propagation region 12 are sealed with a lid. Regardless of the relationship, the comb-shaped electrode and the surface acoustic wave propagation region 12 are reliably protected (packaged) on the surface acoustic wave element side. For example, as shown in FIG. 5, the bridge-shaped lid portion 14 straddling the comb-shaped electrode and the surface acoustic wave propagation region 12 is formed in a state where a space for accommodating the comb-shaped electrode and the surface acoustic wave propagation region 12 is formed. By covering with the film 16, the space in which the comb-shaped electrode and the surface acoustic wave propagation region 12 are accommodated is sealed, and a lid having a double structure of the bridge-shaped lid 14 and the film 16 is formed. The comb-shaped electrode and the surface acoustic wave propagation region 12 are reliably protected in the surface acoustic wave element by the lid having the heavy structure. Alternatively, as shown in FIG. 6, in a state where a space for accommodating the comb-shaped electrode and the surface acoustic wave propagation region 12 is formed, a bridge-shaped lid portion (first step) straddling the comb-shaped electrode and the surface acoustic wave propagation region 12 is formed. (1 lid portion) 14 is covered with a film 16 to seal the space in which the comb-shaped electrode and the surface acoustic wave propagation region 12 are accommodated, and is further covered with a second lid portion 18 from the outside of the film 16. Thus, a lid having a triple structure of the first lid 14, the film 16, and the second lid 18 is formed. By this triple lid, the comb-shaped electrode and the elastic surface of the surface acoustic wave device are formed. The wave propagation region 12 is reliably protected.

本実施形態における弾性表面波素子は、次のようにして作製される。まず、図１のように、圧電基板１０上には、複数の弾性表面波素子が形成されている。各弾性表面波素子には、櫛形電極及び弾性表面波の伝搬領域１２と、櫛型電極から引き出された電極パターン２０および電極パッド３０とが形成されている。図１では、説明の便宜上、一例として圧電基板１０上に形成された２組の弾性表面波素子を示している。そして本実施形態では、この圧電基板１０上に形成されている弾性表面波素子のそれぞれに対し、各櫛型電極及び弾性表面波の伝搬領域１２を封止する蓋体を作製していく。   The surface acoustic wave element according to this embodiment is manufactured as follows. First, as shown in FIG. 1, a plurality of surface acoustic wave elements are formed on the piezoelectric substrate 10. Each surface acoustic wave element is formed with a comb-shaped electrode and a surface acoustic wave propagation region 12, and an electrode pattern 20 and an electrode pad 30 drawn from the comb-shaped electrode. In FIG. 1, for convenience of explanation, two sets of surface acoustic wave elements formed on the piezoelectric substrate 10 are shown as an example. In this embodiment, for each of the surface acoustic wave elements formed on the piezoelectric substrate 10, a lid for sealing each comb electrode and the surface acoustic wave propagation region 12 is produced.

蓋体の作製工程としては、まず、圧電基板１０上の櫛型電極及び弾性表面波の伝搬領域１２の上に犠牲層４０を形成する（図２参照）。犠牲層４０の形成工程は、圧電基板１０の全体に犠牲層を塗布してから、公知のフォトリソグラフィー技術を適用して、余分な犠牲層を除去し、それぞれの弾性表面波素子における櫛型電極及び弾性表面波の伝搬領域１２に被さるように、図２のように犠牲層４０を形成させればよい。ここで、形成した犠牲層４０の高さＨ１は、約１〜１０μｍとしている。   In the lid manufacturing process, first, a sacrificial layer 40 is formed on the comb-shaped electrode on the piezoelectric substrate 10 and the surface acoustic wave propagation region 12 (see FIG. 2). The sacrificial layer 40 is formed by applying a sacrificial layer to the entire piezoelectric substrate 10 and then applying a known photolithography technique to remove the extra sacrificial layer, and comb electrodes in each surface acoustic wave element. The sacrificial layer 40 may be formed so as to cover the surface acoustic wave propagation region 12 as shown in FIG. Here, the height H1 of the formed sacrificial layer 40 is about 1 to 10 μm.

次に、例えば樹脂を用いて、犠牲層４０の上を跨ぐようにディスペンサ等で樹脂を塗布し、この樹脂を硬化させる（図３参照）。この硬化した樹脂が後のブリッジ状の蓋体部１４となる。この樹脂の塗布、硬化工程も、圧電基板１０の全体に樹脂を塗布してから、露光、ベーク、現像、レジスト除去などといった公知のフォトリソグラフィー技術を適用して、余分な樹脂を除去して、図３のように、各犠牲層４０を樹脂体が個別に跨いだ状態にしてから各樹脂体を硬化させればよい。ここで、形成した樹脂体の高さＨ２（すなわち、ブリッジ状の蓋体部１４の高さＨ２）は、約５〜１００μｍとしている。   Next, for example, using a resin, the resin is applied with a dispenser or the like so as to straddle the sacrificial layer 40, and the resin is cured (see FIG. 3). This cured resin becomes the bridge-shaped lid portion 14 later. Also in this resin application and curing process, after applying the resin to the entire piezoelectric substrate 10, by applying a known photolithography technique such as exposure, baking, development, resist removal, etc., the excess resin is removed, As shown in FIG. 3, the resin bodies may be cured after the resin bodies are individually straddled over the sacrificial layers 40. Here, the height H2 of the formed resin body (that is, the height H2 of the bridge-shaped lid body portion 14) is about 5 to 100 μm.

そして、このように各犠牲層４０を跨ぐ樹脂体が形成された後、犠牲層エッチングを行う。これにより、犠牲層４０のみが除去されるため、櫛形電極及び弾性表面波の伝搬領域１２が収容される空間を形成して櫛形電極及び弾性表面波の伝搬領域１２を覆うように跨いだ状態の樹脂体、すなわちブリッジ状の蓋体部１４が、圧電基板１０上に形成される（図４参照）。なお、この蓋体部１４はブリッジ状の構造であるため、犠牲層４０の除去に用いられるエッチング液が、この蓋体部１４の内部から外部に抜け易く、エッチング処理が良好にかつ効率良く行える。   And after the resin body which straddles each sacrificial layer 40 is formed in this way, sacrificial layer etching is performed. As a result, only the sacrificial layer 40 is removed, so that a space for accommodating the comb-shaped electrode and the surface acoustic wave propagation region 12 is formed and straddled so as to cover the comb-shaped electrode and the surface acoustic wave propagation region 12. A resin body, that is, a bridge-shaped lid portion 14 is formed on the piezoelectric substrate 10 (see FIG. 4). Since the lid portion 14 has a bridge-like structure, the etching solution used for removing the sacrificial layer 40 can easily escape from the inside of the lid portion 14 to perform the etching process satisfactorily and efficiently. .

なお、本実施形態では、ブリッジ状の蓋体部１４を形成するための樹脂には光感光性樹脂（例えば化学増幅型レジストや永久レジスト）を用い、犠牲層４０には、化学増幅型レジストや永久レジストの硬化温度に耐え得る耐熱性を有し、且つ有機溶剤によって除去可能なレジストを用いている。特に、有機溶剤によって除去可能なレジストを犠牲層４０として用いたのは、以下の理由がある。弾性波デバイスではアルミニウム製の電極を用いるのが一般的であるが、エッチング液を酸性やアルカリ性のものにしてしまうと、犠牲層エッチング時にアルミニウム製電極と反応してしまい、これにより、弾性波素子の周波数特性が変化してしまう。そこで、エッチング液と電極との反応を回避すべく、犠牲層４０には有機溶剤によって除去可能なレジストを用い、有機溶剤を用いてエッチングするのが好適である。   In the present embodiment, a photosensitive resin (for example, a chemically amplified resist or a permanent resist) is used as the resin for forming the bridge-shaped lid portion 14, and a chemically amplified resist or a permanent resist is used for the sacrificial layer 40. A resist having heat resistance that can withstand the curing temperature of the permanent resist and removable by an organic solvent is used. In particular, the reason why the resist that can be removed by the organic solvent is used as the sacrificial layer 40 is as follows. In an acoustic wave device, it is common to use an electrode made of aluminum. However, if the etching solution is made acidic or alkaline, it reacts with the aluminum electrode during the sacrificial layer etching. The frequency characteristics of this will change. Therefore, in order to avoid a reaction between the etchant and the electrode, it is preferable to use a resist that can be removed by an organic solvent for the sacrificial layer 40 and perform the etching using the organic solvent.

また、硬化温度が高温（例えば１５０℃）である化学増幅型レジストや永久レジストをブリッジ状の蓋体部１４の材料として用い、この高温の硬化温度に耐え得る耐熱性を有し且つ有機溶剤によって除去可能なレジストを犠牲層４０として用いると、以下のような利点がある。通常のレジストでは、９５℃以下での使用が必要であるため、このようなレジストを犠牲層４０として用いると、ブリッジ状の蓋体部１４を形成する際には９５℃以上の温度を加えて樹脂を硬化させることはできず、またもしそれ以上の温度が加わった場合には、櫛型電極の電極指にレジストが付着し、犠牲層除去処理後にもレジスト除去残留物が付着したまま残ってしまうことが懸念される。しかしながら、硬化温度が高温（例えば１５０℃）である化学増幅型レジストや永久レジストをブリッジ状の蓋体部１４の材料として用い、この高温の硬化温度に耐え得る耐熱性を有し且つ有機溶剤によって除去可能なレジストを犠牲層４０として用いれば、犠牲層４０の形成後に露光、ベーク、現像を行ってから１５０℃のハードベークによる硬化を行って、犠牲層４０を跨ぐブリッジ状の蓋体部１４を形成しても、犠牲層４０は高温の硬化温度に耐え得る耐熱性を有することから、通常のレジストの場合に生じる問題は解消される。したがって、本実施形態において使用した材料によれば、犠牲層４０の除去も確実に行われ、且つ、ブリッジ状の蓋体部１４を確実に硬化させることができる。そして、櫛形電極及び弾性表面波の伝搬領域１２が収容される空間（すなわち、高さＨ１が約１〜１０μｍの空間）を形成し且つ櫛形電極及び弾性表面波の伝搬領域１２を覆うように跨ぐブリッジ状の蓋体部１４を、良好に圧電基板１０上に形成することができる。   Further, a chemically amplified resist or permanent resist having a high curing temperature (for example, 150 ° C.) is used as a material for the bridge-shaped lid body portion 14. The use of a removable resist as the sacrificial layer 40 has the following advantages. Since a normal resist needs to be used at 95 ° C. or lower, when such a resist is used as the sacrificial layer 40, a temperature of 95 ° C. or higher is applied when the bridge-shaped lid portion 14 is formed. The resin cannot be cured, and if a higher temperature is applied, the resist will adhere to the electrode fingers of the comb electrode, and the resist removal residue will remain after the sacrificial layer removal treatment. There is a concern that However, a chemically amplified resist or permanent resist having a high curing temperature (for example, 150 ° C.) is used as a material for the bridge-shaped lid portion 14 and has heat resistance that can withstand this high curing temperature, and depending on the organic solvent. If a removable resist is used as the sacrificial layer 40, exposure, baking and development are performed after the sacrificial layer 40 is formed, followed by curing by hard baking at 150 ° C., and the bridge-shaped lid 14 straddling the sacrificial layer 40. Even when the sacrificial layer is formed, the sacrificial layer 40 has heat resistance that can withstand a high curing temperature, and thus the problem that occurs in the case of a normal resist is solved. Therefore, according to the material used in the present embodiment, the sacrificial layer 40 can be reliably removed, and the bridge-shaped lid portion 14 can be reliably cured. A space for accommodating the comb-shaped electrode and the surface acoustic wave propagation region 12 (that is, a space having a height H1 of about 1 to 10 μm) is formed and straddles the comb-shaped electrode and the surface acoustic wave propagation region 12. The bridge-shaped lid portion 14 can be satisfactorily formed on the piezoelectric substrate 10.

こうして、図４のようなブリッジ状の蓋体部１４を形成した後、この蓋体部１４を覆うようにフィルム１６を被せ、フィルム１６の外縁を圧電基板１０の表面に接着することで、ブリッジ状の蓋体部１４の開口部を塞ぐ。こうして、ブリッジ状の蓋体部１４と圧電基板１０との間に形成される櫛形電極及び弾性表面波の伝搬領域１２の収容空間を、フィルム１６によって密封する（図５参照）。なお、この工程も、圧電基板１０の全体にフィルム１６を被せてから、露光、ベーク、現像、レジスト除去などといった公知のフォトリソグラフィー技術を適用して、余分なフィルムを除去し、ブリッジ状の蓋体部１４のそれぞれに対して図５のようにフィルム１６が被せられた状態にすればよい。また、本実施形態では、フィルム１６としてドライフィルムレジストを用いており、このドライフィルムレジストを用いることで、上記のようなフォトリソグラフィー技術の適用を可能とし、余分なフィルムを除去して、図５のように各ブリッジ状の蓋体部１４にフィルム１６が被せられた状態にすることが容易となる。   In this way, after forming the bridge-shaped lid portion 14 as shown in FIG. 4, the film 16 is covered so as to cover the lid portion 14, and the outer edge of the film 16 is bonded to the surface of the piezoelectric substrate 10, thereby The opening of the lid portion 14 is closed. In this way, the accommodation space of the comb-shaped electrode formed between the bridge-shaped lid portion 14 and the piezoelectric substrate 10 and the surface acoustic wave propagation region 12 is sealed by the film 16 (see FIG. 5). Also in this step, after covering the entire piezoelectric substrate 10 with the film 16, a known photolithography technique such as exposure, baking, development, and resist removal is applied to remove the excess film, and the bridge-shaped lid What is necessary is just to make it the state which covered the film 16 with respect to each of the body parts 14 like FIG. Further, in the present embodiment, a dry film resist is used as the film 16, and by using this dry film resist, it is possible to apply the photolithography technique as described above, and the excess film is removed, and FIG. Thus, it becomes easy to make the state where each bridge-shaped lid 14 is covered with the film 16.

以上のようにして、本実施形態では、圧電基板１０上に形成されている複数の弾性表面波素子において、ブリッジ状の蓋体部１４及びフィルム１６の二重構造からなる蓋体が、各弾性表面波素子に対して作製される。そして、このような蓋体により、各弾性表面波素子において、櫛型電極及び弾性表面波の伝搬領域１２が確実に保護されることとなる。   As described above, in the present embodiment, in the plurality of surface acoustic wave elements formed on the piezoelectric substrate 10, the lid body having the double structure of the bridge-shaped lid body portion 14 and the film 16 has each elasticity. It is manufactured for a surface acoustic wave device. Such a lid reliably protects the comb-shaped electrode and the surface acoustic wave propagation region 12 in each surface acoustic wave element.

そして、複数の弾性表面波素子が形成された圧電基板１０において、各弾性表面波素子に上記のような蓋体が形成された後に、圧電基板１０から個々の弾性表面波素子を切り出すことで、櫛型電極及び弾性表面波の伝搬領域１２を蓋体によって確実に保護した弾性表面波素子が製造される。   Then, in the piezoelectric substrate 10 on which a plurality of surface acoustic wave elements are formed, after the above-described lid is formed on each surface acoustic wave element, by cutting out individual surface acoustic wave elements from the piezoelectric substrate 10, A surface acoustic wave element in which the comb electrode and the surface acoustic wave propagation region 12 are reliably protected by the lid is manufactured.

ここで、各弾性表面波素子に形成された蓋体は、樹脂製のブリッジ状の蓋体部１４により、櫛型電極及び弾性表面波の伝搬領域１２の良好な密封性のみならず、外力に対する十分な耐久性をも兼ね備えている。したがって、蓋体を作製した後の弾性表面波素子の取扱いがし易くなるといった利点もある。   Here, the lid formed on each surface acoustic wave element is not only good sealability of the comb-shaped electrode and the surface acoustic wave propagation region 12 but also external force by the resin bridge-like lid 14. It also has sufficient durability. Therefore, there is an advantage that the surface acoustic wave element after the lid is manufactured can be easily handled.

ところで、ブリッジ状の蓋体部１４に被せるフィルム１６の強度が弱い場合には、良好な密封性は望めない。また、後述のように複数の弾性表面波素子が形成された圧電基板１０から個々の弾性表面波素子を切り出す前に、各弾性表面波素子における電極パッド３０上に、バンプ下地金属（ＵＢＭ）５０及びバンプ６０を形成する場合には、形成時に種々の薬品を使用するため、その薬品によってフィルム１６が劣化し、良好な密封性は望めなくなるといった事態が生じ得る。   By the way, when the strength of the film 16 that covers the bridge-shaped lid portion 14 is weak, good sealing performance cannot be expected. In addition, before the individual surface acoustic wave elements are cut out from the piezoelectric substrate 10 on which a plurality of surface acoustic wave elements are formed as described later, a bump base metal (UBM) 50 is formed on the electrode pad 30 in each surface acoustic wave element. When the bumps 60 are formed, since various chemicals are used at the time of formation, the film 16 may be deteriorated by the chemicals, and a good sealing performance may not be expected.

そこで、圧電基板１０上に形成されている複数の弾性表面波素子において、図５のように各ブリッジ状の蓋体部（第一の蓋体部）１４にフィルム１６を被せたら、さらにこのフィルム１６が被せられたブリッジ状の第一の蓋体部１４の全体を覆うように、ディスペンサ等で樹脂を塗布し、この樹脂を硬化させることで、フィルム１６が被せられた第一の蓋体部１４の全体をさらに覆う第二の蓋体部１８を形成しても良い（図６参照）。こうして、図６のように、第一の蓋体部１４、フィルム１６及び第二の蓋体部１８の三重構造からなる蓋体を形成できる。この第二の蓋体部１８の形成工程も、圧電基板１０の全体に樹脂を塗布してから、露光、ベーク、現像、レジスト除去などといった公知のフォトリソグラフィー技術を適用して、余分な樹脂を除去し、フィルム１６が被せられた第一の蓋体部１４の全体をさらに覆う第二の蓋体部１８を、フィルム１６が被せられた第一の蓋体部１４のそれぞれに対して形成させればよい。   Therefore, in a plurality of surface acoustic wave elements formed on the piezoelectric substrate 10, when each bridge-shaped lid (first lid) 14 is covered with a film 16 as shown in FIG. The first lid body portion covered with the film 16 is applied by applying a resin with a dispenser or the like so as to cover the entire bridge-shaped first lid body portion 14 covered with 16 and curing the resin. You may form the 2nd cover body part 18 which further covers the whole 14 (refer FIG. 6). Thus, as shown in FIG. 6, a lid having a triple structure of the first lid 14, the film 16, and the second lid 18 can be formed. Also in the formation process of the second lid 18, after applying a resin to the entire piezoelectric substrate 10, a known photolithography technique such as exposure, baking, development, resist removal, etc. is applied to remove excess resin. A second lid 18 that is removed and further covers the entire first lid 14 covered with the film 16 is formed on each of the first lid 14 covered with the film 16. Just do it.

なお、フィルム１６を被せない状態で第一の蓋体部１４を覆うように樹脂を塗布して硬化させ、第二の蓋体部１８によって第一の蓋体部１４の開口部を塞ごうとすると、この第一の蓋体部１４の開口部の高さが約１〜１０μｍであるために、毛細管現象によって樹脂が開口部から第一の蓋体部１４の内部（すなわち、櫛形電極及び弾性表面波の伝搬領域１２が収容される空間）に浸入してしまうといった事態が生じ得るが、フィルム１６の存在によって、このような事態の発生も回避されている。   It is to be noted that the resin is applied and cured so as to cover the first lid body portion 14 without covering the film 16, and the second lid body portion 18 tries to block the opening of the first lid body portion 14. Then, since the height of the opening portion of the first lid portion 14 is about 1 to 10 μm, the resin flows from the opening portion to the inside of the first lid portion 14 (that is, the comb-shaped electrode and the elastic member due to capillary action). Although a situation may occur in which the surface wave propagation area 12 is contained), the presence of the film 16 prevents such a situation from occurring.

以上のように、圧電基板１０上に形成されている複数の弾性表面波素子において、第一の蓋体部１４、フィルム１６及び第二の蓋体部１８の三重構造からなる蓋体により、各弾性表面波素子における櫛型電極及び弾性表面波の伝搬領域１２を確実に保護するようにしても良い。   As described above, in the plurality of surface acoustic wave elements formed on the piezoelectric substrate 10, each of the lid bodies formed of the triple structure of the first lid body portion 14, the film 16, and the second lid body portion 18, The comb-shaped electrode and the surface acoustic wave propagation region 12 in the surface acoustic wave element may be reliably protected.

またこのとき、各弾性表面波素子に形成された蓋体は、樹脂製の第一の蓋体部１４及び第二の蓋体部１８が重なる構造を有しているため、上記の実施形態に比して、より外力に対する十分な耐久性をも兼ね備えることとなる。   At this time, the lid formed on each surface acoustic wave element has a structure in which the first lid body portion 14 and the second lid body portion 18 made of resin overlap with each other. In comparison, it also has sufficient durability against external forces.

なお、複数の弾性表面波素子が形成された圧電基板１０から個々の弾性表面波素子を切り出す前に、各弾性表面波素子における電極パッド３０上に、バンプ下地金属（ＵＢＭ）５０及びバンプ６０を形成し、しかる後に圧電基板１０から個々の弾性表面波素子を切り出すことで、図７のような構成の弾性表面波素子を複数作製でき、これにより、櫛型電極及び弾性表面波の伝搬領域１２が蓋体によって確実に保護された弾性表面波素子のベアチップ供給が可能となる。この場合、バンプ下地金属（ＵＢＭ）５０及びバンプ６０の形成工程を弾性表面波素子の切り出し後に、切り出された各弾性表面波素子ごとに行っても良い。ここで、図７では、三重構造の蓋体を形成した弾性表面波素子に対してバンプ下地金属（ＵＢＭ）５０及びバンプ６０を形成した構成となっているが、フィルム１６の性質によっては、図６に示すような二重構造の蓋体を形成した弾性表面波素子に対してバンプ下地金属（ＵＢＭ）５０及びバンプ６０を形成しても良いことは勿論である。   In addition, before cutting out each surface acoustic wave element from the piezoelectric substrate 10 on which a plurality of surface acoustic wave elements are formed, a bump base metal (UBM) 50 and a bump 60 are formed on the electrode pad 30 in each surface acoustic wave element. By forming and then cutting out individual surface acoustic wave elements from the piezoelectric substrate 10, a plurality of surface acoustic wave elements having the structure as shown in FIG. 7 can be produced, whereby the comb-shaped electrode and the surface acoustic wave propagation region 12 can be produced. It is possible to supply a bare chip of a surface acoustic wave element that is reliably protected by a lid. In this case, the formation process of the bump base metal (UBM) 50 and the bump 60 may be performed for each cut out surface acoustic wave element after the surface acoustic wave element is cut out. Here, FIG. 7 shows a structure in which a bump base metal (UBM) 50 and a bump 60 are formed on a surface acoustic wave element having a triple-structured lid, depending on the properties of the film 16. Of course, the bump base metal (UBM) 50 and the bump 60 may be formed on the surface acoustic wave element having a double-structured lid as shown in FIG.

圧電基板上に形成される複数の弾性表面波素子の構成の一例を示す図である。It is a figure which shows an example of a structure of the several surface acoustic wave element formed on a piezoelectric substrate. 本発明の実施の形態における弾性表面波素子の蓋体を作製する過程を示す図であり、図２（ａ）は犠牲層を基板上に形成した状態を示す断面図、図２（ｂ）は上面図である。FIGS. 2A and 2B are diagrams illustrating a process of manufacturing a cover for a surface acoustic wave element according to an embodiment of the present invention. FIG. 2A is a cross-sectional view illustrating a state where a sacrificial layer is formed on a substrate, and FIG. It is a top view. 本発明の実施の形態における弾性表面波素子の蓋体を作製する過程を示す図であり、図３（ａ）は犠牲層上に樹脂を塗布した状態を示す断面図、図３（ｂ）は上面図である。FIGS. 3A and 3B are views showing a process of manufacturing a surface acoustic wave element lid according to an embodiment of the present invention, FIG. 3A is a cross-sectional view showing a state where a resin is applied on a sacrificial layer, and FIG. It is a top view. 本発明の実施の形態における弾性表面波素子の蓋体を作製する過程を示す図であり、犠牲層を除去した状態を示す断面図である。It is a figure which shows the process of producing the cover body of the surface acoustic wave element in embodiment of this invention, and is sectional drawing which shows the state which removed the sacrificial layer. 犠牲層除去後のブリッジ状の蓋体部をフィルムで覆って作製された、本発明の実施の形態における弾性表面波素子の構成を示す図である。It is a figure which shows the structure of the surface acoustic wave element in embodiment of this invention produced by covering the bridge-shaped cover body part after sacrificial layer removal with the film. 他の実施の形態における弾性表面波素子の構成を示す図である。It is a figure which shows the structure of the surface acoustic wave element in other embodiment. 図６の弾性表面波素子にバンプを取り付けた状態を示す図である。It is a figure which shows the state which attached the bump to the surface acoustic wave element of FIG.

符号の説明Explanation of symbols

１０ 圧電基板、１２ 櫛型電極及び弾性表面波の伝搬領域、１４ ブリッジ状の蓋体部（第一の蓋体部）、１６ フィルム、１８ 第二の蓋体部、２０ 電極パターン、３０ 電極パッド、４０ 犠牲層、５０ バンプ下地金属、６０ バンプ。   DESCRIPTION OF SYMBOLS 10 Piezoelectric substrate, 12 Comb-shaped electrode and surface acoustic wave propagation region, 14 Bridge-shaped lid (first lid), 16 film, 18 Second lid, 20 Electrode pattern, 30 Electrode pad , 40 sacrificial layer, 50 bump base metal, 60 bump.

Claims (9)

圧電基板と、圧電基板上に形成された櫛形電極と、櫛形電極から圧電基板の表面及び表面近傍を伝搬する弾性表面波の伝搬領域と、を有する弾性表面波素子において、
櫛形電極及び弾性表面波の伝搬領域が収容される空間を形成して、櫛形電極及び弾性表面波の伝搬領域を覆う蓋体を圧電基板上に有し、
蓋体は、
櫛形電極及び弾性表面波の伝搬領域が収容される空間を形成して、櫛形電極及び弾性表面波の伝搬領域を覆うように跨ぐブリッジ状の蓋体部と、
ブリッジ状の蓋体部を覆い、櫛形電極及び弾性表面波の伝搬領域が収容される空間を密封するフィルムと、
からなる二重構造となっていることを特徴とする弾性表面波素子。 In a surface acoustic wave device having a piezoelectric substrate, a comb electrode formed on the piezoelectric substrate, and a surface acoustic wave propagation region propagating from the comb electrode to the surface of the piezoelectric substrate and the vicinity of the surface,
Forming a space in which the comb electrode and the surface acoustic wave propagation region are accommodated, and having a lid on the piezoelectric substrate covering the comb electrode and the surface acoustic wave propagation region;
The lid is
Forming a space in which the comb-shaped electrode and the surface acoustic wave propagation region are accommodated, and a bridge-shaped lid portion covering the comb-shaped electrode and the surface acoustic wave propagation region;
A film that covers the bridge-shaped lid and seals the space in which the comb-shaped electrode and the surface acoustic wave propagation region are accommodated;
A surface acoustic wave device having a double structure comprising: 圧電基板と、圧電基板上に形成された櫛形電極と、櫛形電極から圧電基板の表面及び表面近傍を伝搬する弾性表面波の伝搬領域と、を有する弾性表面波素子において、
櫛形電極及び弾性表面波の伝搬領域が収容される空間を形成して、櫛形電極及び弾性表面波の伝搬領域を覆う蓋体を圧電基板上に有し、
蓋体は、
櫛形電極及び弾性表面波の伝搬領域が収容される空間を形成して、櫛形電極及び弾性表面波の伝搬領域を覆うように跨ぐブリッジ状の第一の蓋体部と、
第一の蓋体部を覆い、櫛形電極及び弾性表面波の伝搬領域が収容される空間を密封するフィルムと、
フィルムによって覆われた第一の蓋体部を覆う第二の蓋体部と、
からなる三重構造となっていることを特徴とする弾性表面波素子。 In a surface acoustic wave device having a piezoelectric substrate, a comb electrode formed on the piezoelectric substrate, and a surface acoustic wave propagation region propagating from the comb electrode to the surface of the piezoelectric substrate and the vicinity of the surface,
Forming a space in which the comb electrode and the surface acoustic wave propagation region are accommodated, and having a lid on the piezoelectric substrate covering the comb electrode and the surface acoustic wave propagation region;
The lid is
A bridge-shaped first lid portion that forms a space in which the comb-shaped electrode and the surface acoustic wave propagation region are accommodated and covers the comb-shaped electrode and the surface acoustic wave propagation region;
A film that covers the first lid portion and seals the space in which the comb-shaped electrode and the surface acoustic wave propagation region are accommodated;
A second lid portion covering the first lid portion covered by the film;
The surface acoustic wave device, characterized in that has a triple structure consisting of. 請求項１または２に記載の弾性表面波素子において、
圧電基板上に、蓋体の外部に配置された電極パッドと、電極パッドと櫛型電極とを接続する電極パターンと、が形成され、さらに電極パッド上にはバンプが形成されていることを特徴とする弾性表面波素子。 The surface acoustic wave device according to claim 1 or 2 ,
An electrode pad arranged outside the lid, an electrode pattern connecting the electrode pad and the comb-shaped electrode are formed on the piezoelectric substrate, and a bump is formed on the electrode pad. A surface acoustic wave device. 請求項３に記載の弾性表面波素子を、実装基板の実装面にバンプを介して実装してなる弾性表面波デバイス。 The surface acoustic wave device of the surface acoustic wave device, comprising implements via the bumps on the mounting surface of the mounting board according to claim 3. 櫛形電極と、櫛形電極から圧電基板の表面及び表面近傍を伝搬する弾性表面波の伝搬領域と、を有する弾性表面波素子が複数形成された圧電基板に対し、
櫛形電極及び弾性表面波の伝搬領域が収容される空間を形成し、櫛形電極及び弾性表面波の伝搬領域を覆うように跨ぐブリッジ状の蓋体部を、各弾性表面波素子ごとに個別に形成する蓋体部形成工程と、
各弾性表面波素子に形成されたブリッジ状の蓋体部をフィルムで覆い、各弾性表面波素子における櫛形電極及び弾性表面波の伝搬領域が収容される空間を個別に密封する密封工程と、
を有することを特徴とする弾性表面波素子の製造方法。 For a piezoelectric substrate on which a plurality of surface acoustic wave elements having a comb-shaped electrode and a surface acoustic wave propagation region propagating from the comb-shaped electrode to the surface of the piezoelectric substrate and the vicinity of the surface are formed,
A space for accommodating the comb-shaped electrode and the surface acoustic wave propagation region is formed, and a bridge-shaped lid that covers the comb-shaped electrode and the surface acoustic wave propagation region is individually formed for each surface acoustic wave element. A lid part forming step,
A sealing step of covering the bridge-shaped lid portion formed in each surface acoustic wave element with a film and individually sealing the space in which the comb-shaped electrode and the surface acoustic wave propagation region are accommodated in each surface acoustic wave element;
A method for producing a surface acoustic wave device, comprising: 櫛形電極と、櫛形電極から圧電基板の表面及び表面近傍を伝搬する弾性表面波の伝搬領域と、を有する弾性表面波素子が複数形成された圧電基板に対し、
櫛形電極及び弾性表面波の伝搬領域が収容される空間を形成し、櫛形電極及び弾性表面波の伝搬領域を覆うように跨ぐブリッジ状の第一の蓋体部を、各弾性表面波素子ごとに個別に形成する第一蓋体部形成工程と、
各弾性表面波素子に形成された第一の蓋体部をフィルムで覆い、各弾性表面波素子における櫛形電極及び弾性表面波の伝搬領域が収容される空間を個別に密封する密封工程と、
各弾性表面波素子におけるフィルムで覆われた第一の蓋体部を覆う第二の蓋体部を、各弾性表面波素子ごとに個別に形成する第二蓋体部形成工程と、
を有することを特徴とする弾性表面波素子の製造方法。 For a piezoelectric substrate on which a plurality of surface acoustic wave elements having a comb-shaped electrode and a surface acoustic wave propagation region propagating from the comb-shaped electrode to the surface of the piezoelectric substrate and the vicinity of the surface are formed,
For each surface acoustic wave element, a bridge-shaped first lid that forms a space in which the comb electrode and the surface acoustic wave propagation region are accommodated and covers the comb electrode and the surface acoustic wave propagation region. A first lid part forming step to be formed individually;
A sealing step of covering the first lid formed on each surface acoustic wave element with a film and individually sealing the space in which the comb-shaped electrode and the surface acoustic wave propagation region are accommodated in each surface acoustic wave element;
A second lid part forming step of individually forming a second lid part covering the first lid part covered with the film in each surface acoustic wave element for each surface acoustic wave element;
A method for producing a surface acoustic wave device, comprising: 請求項５または６に記載の弾性表面波素子の製造方法において、
ブリッジ状の蓋体部を形成する工程は、
各弾性表面波素子における櫛型電極及び弾性表面波の伝搬領域の上に被さるように、犠牲層を各弾性表面波素子ごとに個別に形成する工程と、
各犠牲層の上を跨ぐように樹脂を塗布して硬化させる工程と、
犠牲層エッチングにより各犠牲層を除去する工程と、
を有し、
各犠牲層の除去により、櫛形電極及び弾性表面波の伝搬領域が収容される空間を形成し、櫛形電極及び弾性表面波の伝搬領域を覆うように跨ぐブリッジ状の蓋体部が、各弾性表面波素子ごとに個別に形成される、
ことを特徴とする弾性表面波素子の製造方法。 In the manufacturing method of the surface acoustic wave element according to claim 5 or 6,
The step of forming the bridge-shaped lid is as follows:
Forming a sacrificial layer individually for each surface acoustic wave element so as to cover the comb-shaped electrode and the surface acoustic wave propagation region in each surface acoustic wave element;
Applying and curing a resin so as to straddle over each sacrificial layer;
Removing each sacrificial layer by sacrificial layer etching;
Have
By removing each sacrificial layer, a space for accommodating the comb-shaped electrode and the surface acoustic wave propagation region is formed, and a bridge-shaped lid portion covering the comb-shaped electrode and the surface acoustic wave propagation region is provided for each elastic surface. Formed individually for each wave element,
A method of manufacturing a surface acoustic wave device. 請求項７に記載の弾性表面波素子の製造方法において、
ブリッジ状の蓋体部を形成するための樹脂には、光感光性樹脂を用い、
犠牲層には、光感光性樹脂の硬化温度に耐え得る耐熱性を有し、且つ有機溶剤によって除去可能なレジストを用い、
有機溶剤を用いて犠牲層エッチングを行うことにより犠牲層を除去する、
ことを特徴とする弾性表面波素子の製造方法。 In the manufacturing method of the surface acoustic wave element according to claim 7 ,
For the resin for forming the bridge-shaped lid , a photosensitive resin is used,
For the sacrificial layer, a resist having heat resistance that can withstand the curing temperature of the photosensitive resin and removable by an organic solvent is used.
Removing the sacrificial layer by performing sacrificial layer etching using an organic solvent;
A method of manufacturing a surface acoustic wave device. 請求項５から８のいずれか一つに記載の弾性表面波素子の製造方法において、
ブリッジ状の蓋体部を覆うフィルムには、ドライフィルムレジストを用いる、
ことを特徴とする弾性表面波素子の製造方法。 In the manufacturing method of the surface acoustic wave element according to any one of claims 5 to 8,
Use a dry film resist for the film that covers the bridge-shaped lid.
A method of manufacturing a surface acoustic wave device.
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