JP4704004B2 - 発光装置及び電子機器 - Google Patents
発光装置及び電子機器 Download PDFInfo
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- JP4704004B2 JP4704004B2 JP2004299587A JP2004299587A JP4704004B2 JP 4704004 B2 JP4704004 B2 JP 4704004B2 JP 2004299587 A JP2004299587 A JP 2004299587A JP 2004299587 A JP2004299587 A JP 2004299587A JP 4704004 B2 JP4704004 B2 JP 4704004B2
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- 150000002460 imidazoles Chemical class 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229940079865 intestinal antiinfectives imidazole derivative Drugs 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- UEEXRMUCXBPYOV-UHFFFAOYSA-N iridium;2-phenylpyridine Chemical compound [Ir].C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1 UEEXRMUCXBPYOV-UHFFFAOYSA-N 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 125000000040 m-tolyl group Chemical group [H]C1=C([H])C(*)=C([H])C(=C1[H])C([H])([H])[H] 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical class C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229940042055 systemic antimycotics triazole derivative Drugs 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- GWDUZCIBPDVBJM-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzothiazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1 GWDUZCIBPDVBJM-UHFFFAOYSA-L 0.000 description 1
- QEPMORHSGFRDLW-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzoxazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1 QEPMORHSGFRDLW-UHFFFAOYSA-L 0.000 description 1
Images
Landscapes
- Electroluminescent Light Sources (AREA)
Description
101 陽極
102 電界発光層
103 陰極
104 第1の層
105 第2の層
106 第3の層
107 第4の層
108 第5の層
109a バリア層
109b 透光性酸化物導電層
110 基板
111 陽極
112 電界発光層
113 陰極
114 Al−Si層
115 Ti層
116 透光性酸化物導電層
117 バリア層
201 基板
202 下地膜
203 半導体膜
204 半導体膜
205 nチャネル型TFT
206 pチャネル型TFT
207 ゲート絶縁膜
208 ゲート電極
209 ゲート電極
210 パッシベーション膜
211 第1の層間絶縁膜
212 第2の層間絶縁膜
213 配線
214 配線
215 配線
216 配線
217 透光性酸化物導電層
218 バリア層
219 陽極
220 パターニング後の透光性酸化物導電層
221 パターニング後のバリア層
222 隔壁
223 電界発光層
224 陰極
225 発光素子
7000 基板
7001 トランジスタ
7002 トランジスタ
7003 トランジスタ
7004 第1の層間絶縁膜
7005 配線
7006 配線
7007 配線
7008 第2の層間絶縁膜
7009 第3の層間絶縁膜
7010 配線
7011 配線
7012 配線
7013 透光性酸化物導電層
7014 透光性酸化物導電層
7015 透光性酸化物導電層
7016 バリア層
7017 バリア層
7018 バリア層
7019 陽極
7020 陽極
7021 陽極
7022 電界発光層
7023 電界発光層
7024 電界発光層
7025 陰極
7026 発光素子
7027 発光素子
7028 発光素子
7030 カバー材
7031 遮蔽膜
7032 着色層
7033 着色層
7034 着色層
7035 カラーフィルター
7040 隔壁
6110 TFT
6111 TFT
6112 容量素子
6113 発光素子
6114 信号線
6115 電源線
6116 走査線
6117 電源線
6118 TFT
6119 走査線
6125 TFT
6126 配線
6200 基板
6201 画素部
6202 信号線駆動回路
6203 走査線駆動回路
6204 入力端子
6205 保護回路
6206 保護回路
6207 保護回路
7210 容量素子
7220 pチャネル型TFT
7230 TFT
7240 容量素子
7250 抵抗素子
7260 ダイオード
7270 ダイオード
7280 抵抗
7290 抵抗
7300 nチャネル型TFT
7310 pチャネル型TFT
7320 nチャネル型TFT
7330 端子
7340 端子
7350 TFT
7360 TFT
7370 TFT
7380 TFT
4001 基板
4002 画素部
4003 信号線駆動回路
4004 走査線駆動回路
4005 シール材
4006 カバー材
4007 充填材
4008 トランジスタ
4009 トランジスタ
4010 トランジスタ
4011 発光素子
4014 配線
4015 配線
4016 接続端子
4018 FPC
4019 異方性導電膜
2001 筐体
2002 支持台
2003 表示部
2004 スピーカー部
2005 ビデオ入力端子
2201 本体
2202 筐体
2203 表示部
2204 キーボード
2205 外部接続ポート
2206 マウス
2101 本体
2102 表示部
2103 操作キー
2104 モデム
1000 基板
1001 TFT
1002 TFT
1003 発光素子
1010 ゲート電極
1011 ゲート絶縁膜
1012 第1の半導体膜
1013 第2の半導体膜
1014 第3の半導体膜
1015 配線
1020 ゲート電極
1022 第1の半導体膜
1023 第2の半導体膜
1024 第3の半導体膜
1025 配線
1030 陽極
1030a 透光性酸化物導電層
1030b バリア層
1031 電界発光層
1032 陰極
1040 パッシベーション膜
1041 パッシベーション膜
1100 基板
1101 TFT
1102 TFT
1103 発光素子
1110 ゲート電極
1111 ゲート絶縁膜
1112 第1の半導体膜
1113 第2の半導体膜
1114 第3の半導体膜
1115 配線
1120 ゲート電極
1122 第1の半導体膜
1123 第2の半導体膜
1124 第3の半導体膜
1125 配線
1130 チャネル保護膜
1131 チャネル保護膜
1132 陰極
1133 陽極
1133a 透光性酸化物導電層
1133b バリア層
1134 電界発光層
1140 パッシベーション膜
1141 パッシベーション膜
1201 TFT
1202 発光素子
1203 ゲート電極
1204 ゲート絶縁膜
1205 第1の半導体膜
1206 第2の半導体膜
1208 配線
1209 陽極
1210 電界発光層
1211 陰極
1209a 透光性酸化物導電層
1209b バリア層
1220 TFT
1221 第1の半導体膜
1222 第2の半導体膜
1223 配線
1224 絶縁膜
Claims (3)
- 窒化酸化珪素を用いた絶縁膜に接するように形成された陽極と、
前記陽極上に形成された電界発光層と、
前記電界発光層上に形成された陰極とを有し、
前記絶縁膜は、窒素及び珪素を含んでおり、
前記陽極は、前記絶縁膜に接する透光性酸化物導電層と、前記電界発光層に接する0.5〜5nmの厚さのバリア層とを有し、
前記透光性酸化物導電層及び前記バリア層は、酸化インジウムスズ及び酸化珪素を含んでおり、
前記透光性酸化物導電層における珪素の密度よりも前記バリア層における珪素の密度の方が高く、
前記バリア層は、前記電界発光層に含まれる正孔注入層と接していることを特徴とする発光装置。 - 請求項1に記載の発光装置を有することを特徴とする電子機器。
- 請求項2において、ビデオカメラ、デジタルカメラ、ゴーグル型ディスプレイ、ナビゲーションシステム、音響再生装置、ノート型パーソナルコンピュータ、ゲーム機器、携帯情報端末、または記録媒体を備えた画像再生装置であることを特徴とする電子機器。
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JP2002175879A (ja) * | 2000-12-08 | 2002-06-21 | Tdk Corp | 有機elディスプレイパネルおよびそれに用いる有機el素子 |
JP2003114626A (ja) * | 2001-06-18 | 2003-04-18 | Semiconductor Energy Lab Co Ltd | 発光装置及びその作製方法 |
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JP2002175879A (ja) * | 2000-12-08 | 2002-06-21 | Tdk Corp | 有機elディスプレイパネルおよびそれに用いる有機el素子 |
JP2003114626A (ja) * | 2001-06-18 | 2003-04-18 | Semiconductor Energy Lab Co Ltd | 発光装置及びその作製方法 |
JP2003297551A (ja) * | 2002-03-29 | 2003-10-17 | Pioneer Electronic Corp | 有機エレクトロルミネッセンス表示パネル |
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