JP4693827B2 - 半導体装置とその製造方法 - Google Patents
半導体装置とその製造方法 Download PDFInfo
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- JP4693827B2 JP4693827B2 JP2007243663A JP2007243663A JP4693827B2 JP 4693827 B2 JP4693827 B2 JP 4693827B2 JP 2007243663 A JP2007243663 A JP 2007243663A JP 2007243663 A JP2007243663 A JP 2007243663A JP 4693827 B2 JP4693827 B2 JP 4693827B2
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- 239000004065 semiconductor Substances 0.000 title claims description 152
- 238000004519 manufacturing process Methods 0.000 title description 21
- 230000001681 protective effect Effects 0.000 claims description 130
- 239000000758 substrate Substances 0.000 claims description 104
- 238000000034 method Methods 0.000 claims description 14
- 230000002093 peripheral effect Effects 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 30
- 239000000463 material Substances 0.000 description 13
- 239000011521 glass Substances 0.000 description 9
- 239000012790 adhesive layer Substances 0.000 description 8
- 239000007769 metal material Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000004840 adhesive resin Substances 0.000 description 5
- 229920006223 adhesive resin Polymers 0.000 description 5
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 229910018182 Al—Cu Inorganic materials 0.000 description 2
- 229910018594 Si-Cu Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910008465 Si—Cu Inorganic materials 0.000 description 2
- 229910004166 TaN Inorganic materials 0.000 description 2
- 229910008599 TiW Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Description
Claims (4)
- 第1の主面と,前記第1の主面とは反対側の第2の主面とを有する半導体基板と,
前記半導体基板の前記第1の主面に設けられた受光部と,
前記受光部と電気的に接続するように,前記半導体基板の前記第1の主面に設けられた電極と,
前記電極と電気的に接続され,かつ前記半導体基板の前記第1の主面と前記第2の主面とを繋ぐように,前記半導体基板に設けられた貫通配線層と,
前記半導体基板の前記第1の主面を覆うように,前記受光部上に所定の間隙を介して配置された光透過性保護部材と,
前記光透過性保護部材の表面に設けられ,凹凸形状を備え,かつ前記受光部上に開口を有する保護膜と
を具備することを特徴とする半導体装置。 - 請求項1記載の半導体装置において,
前記保護膜は前記光透過性保護部材の外周部から内側に向けて後退していることを特徴とする半導体装置。 - 請求項1または2に記載の半導体装置において,
前記保護膜上を含めて前記光透過性保護部材の表面を覆うように設けられ,前記保護膜より薄く,かつシリコン酸化物またはシリコン窒化物からなる第2の保護膜を具備することを特徴とする半導体装置。 - 第1の主面と,前記第1の主面とは反対側の第2の主面とを有し,前記第1の主面に受
光部と前記受光部と電気的に接続された電極とが設けられた半導体基板を用意する工程と,
凹凸形状を備え,かつ前記受光部に対応する開口を有する保護膜が一方の面に形成された光透過性保護部材を用意する工程と,
前記受光部上に所定の間隙を形成しつつ,前記半導体基板の前記第1の主面と前記光透過性保護部材の他方の面とを貼り合わせる工程と,
前記電極を露出させるように,前記半導体基板の前記第2の主面から前記第1の主面に向けて前記半導体基板に貫通孔を形成する工程と,
前記貫通孔内から前記半導体基板の前記第2の主面に亘って,前記貫通孔内に露出する前記電極と接続する配線層を形成する工程と
を具備することを特徴とする半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007243663A JP4693827B2 (ja) | 2007-09-20 | 2007-09-20 | 半導体装置とその製造方法 |
US12/212,754 US8063462B2 (en) | 2007-09-20 | 2008-09-18 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007243663A JP4693827B2 (ja) | 2007-09-20 | 2007-09-20 | 半導体装置とその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009076629A JP2009076629A (ja) | 2009-04-09 |
JP4693827B2 true JP4693827B2 (ja) | 2011-06-01 |
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ID=40470731
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JP2013143520A (ja) | 2012-01-12 | 2013-07-22 | Sony Corp | 撮像装置および撮像装置の製造方法 |
KR102031731B1 (ko) * | 2012-12-18 | 2019-10-14 | 삼성전자주식회사 | 반도체 패키지 및 이의 제조방법 |
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US20090079020A1 (en) | 2009-03-26 |
US8063462B2 (en) | 2011-11-22 |
JP2009076629A (ja) | 2009-04-09 |
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