JP4686232B2 - 半導体装置及び半導体装置の製造方法 - Google Patents
半導体装置及び半導体装置の製造方法 Download PDFInfo
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- JP4686232B2 JP4686232B2 JP2005100066A JP2005100066A JP4686232B2 JP 4686232 B2 JP4686232 B2 JP 4686232B2 JP 2005100066 A JP2005100066 A JP 2005100066A JP 2005100066 A JP2005100066 A JP 2005100066A JP 4686232 B2 JP4686232 B2 JP 4686232B2
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- insulating layer
- gate insulating
- electrodes
- layer
- semiconductor device
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- H—ELECTRICITY
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- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
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- H—ELECTRICITY
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- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
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Description
図1は本発明の半導体装置の実施形態を示している。同図(A)は液相プロセスによって作製されたTFT1の平面図、同図(B)は、同図(A)のA−A’方向における断面を示す断面図である。両図において対応する部分には同一符号を付している。
次に、図2を参照して薄膜半導体装置の製造工程について説明する。
まず、図2(A)に示すように、ソース・ドレイン電極11a及び11bを形成する。ソース電極11a及びドレイン電極11bの具体的な形成方法としては、公知のスパッタ法、メッキ法を用いて成膜し、フォトリソグラフィ法を用いてパターニングすることができる。また、形成材料をスクリーン印刷法、フレキソ印刷法、オフセット印刷法、インクジェット法、マイクロコンタクトプリンティング法のような印刷法等の、塗布法にて形成することもできる。メッキ法或いは印刷法を用いることで、真空装置を用いずに安価に製造することが可能である。
図2(B)に示すように、ソース・ドレイン電極11a及び11bのそれぞれの少なくとも一部を覆うように、また、ソース・ドレイン電極11a及び11b相互間のギャップを覆うように、有機材料を含む液体材料(以下、半導体材料)を液滴吐出法によって滴下して、アニール処理(乾燥処理)を行う。該ギャップ部(チャネル中心領域)を埋設し、ソース・ドレイン電極11a及び11bを部分的に覆う膜厚が40〜100nm程度の島状の有機半導体層を形成する。
図2(C)に示すように、ゲート絶縁層材料を溶媒に溶解した液体材料を基板10に吐出し、ソース電極11a、ドレイン電極11b、及び半導体層13上(以下、基材上、という)に塗布膜を形成したあと、前記塗布膜から溶媒を除去(すなわち、塗布膜を乾燥)することにより、ゲート絶縁層14を形成する。
本実施形態では、前記塗布膜の乾燥過程において、当該塗布膜の周縁部での局所的な固形分の析出を開始させる。当該塗布膜に含まれるゲート絶縁層材料は、最初に析出を開始した周縁部に多く析出していくため、当該塗布膜の外径を減少させることなく、図2(C)のゲート絶縁層14が示す形状を得ることができる。
図2(D)に示すように、凹状に湾曲したゲート絶縁層13上に、ソース電極11a及びドレイン電極11bの一部を覆い、半導体層13を全部覆うようにゲート電極層15を形成する。
スフィン金(I)、クロロトリフェニルホスフィン金(I)、銀(I)2,4
−ペンタンジオナト錯体、トリメチルホスフィン(ヘキサフルオロアセチルアセトナート)銀(I)錯体、銅(I)ヘキサフルオロペンタンジオナトシクロ
オクタジエン錯体などを例示することができる。
図3は、実施形態1の半導体装置における有機TFTを二次元表示器の画素電極50の駆動に使用した例を示している。同図において図1と対応する部分には同一符号を付している。
以上説明したような半導体装置は、各種電子機器に組み込むことができる。以下、半導体装置を備える本発明の電子機器の製造方法で製造される電子機器について説明する。
図4は、本発明の電子機器を電子ペーパーに適用した場合の実施形態を示す斜視図である。この図に示す電子ペーパー600は、紙と同様の質感および柔軟性を有するリライタブルシートで構成される本体601と、表示ユニット602とを備えている。このような電子ペーパー600では、表示ユニット602が、例えば前述した電気泳動表示装置で構成されている。
図5は、本発明の電子機器をディスプレイに適用した場合の実施形態を示す図であり、(a)は断面図、(b)は平面図である。この図に示すディスプレイ800は、本体部801と、この本体部801に対して着脱自在に設けられた電子ペーパー600とを備えている。なお、この電子ペーパー600は、前述したような構成、すなわち、図4に示す構成と同様のものである。
600 電子ペーパー、601 本体、602 表示ユニット、800 ディスプレイ、801 本体部、802a 搬送ローラ対、802b 搬送ローラ対、803 孔部、804 透明ガラス板、805 挿入口、806 端子部、 807 ソケット、808 コントローラー、809 操作部
Claims (7)
- 基板上に離間して配置される第1及び第2の電極と、
前記第1及び第2の電極の少なくとも一部に覆うとともに前記第1及び第2の電極の間の間隙領域全部を覆う平坦な有機半導体層と、
前記第1及び第2の電極の一部を覆うとともに前記有機半導体層の全部を覆うゲート絶縁層と、
前記ゲート絶縁層上に配置されたゲート電極と、を有し、
前記ゲート絶縁層は、前記間隙領域を覆う中央部分から前記第1及び第2の電極を覆う周辺部分に向かって膜厚が徐々に厚くなって上面が凹状に湾曲しており、
前記ゲート電極は、前記ゲート絶縁層の上面の湾曲に沿って前記第1及び第2の電極の一部を覆うとともに前記間隙領域全部を覆うように形成されることを特徴とする半導体装置。 - 少なくとも前記有機半導体層と、前記ゲート絶縁層と、前記ゲート電極とは、液体材料を用いた液相プロセスによって形成されることを特徴とする請求項1に記載の半導体装置。
- 基板上に離間した第1及び第2の電極を形成する工程と、
前記第1及び第2の電極の少なくとも一部を覆うとともに前記第1及びの電極の間の間隙領域全部を覆う平坦な半導体層を形成する工程と、
前記半導体層上にゲート絶縁層材料を溶媒に溶解した液体材料を付与して塗布膜を形成し、該塗布膜を乾燥してゲート絶縁層を形成する工程と、
前記ゲート絶縁層の上面に沿って前記間隙領域を覆うようにゲート電極層を形成する工程と、を含み、
前記ゲート絶縁層は、前記液体材料の基材に対する接触角を調整することにより前記間隙領域を覆う中央部分から前記第1及び第2の電極を覆う周辺部分に向かって膜厚が徐々に厚くなって上面が凹状に湾曲するように形成される、
半導体装置の製造方法。 - 前記ゲート絶縁層は、前記塗布工程と前記乾燥工程との2つの工程をセットとして複数回繰り返えすことによって形成される請求項3に記載の半導体装置
の製造方法。 - 前記ゲート絶縁層を形成する工程に先立ち、
前記液体材料が塗布される領域に親液処理を施す工程を、さらに含むことを特徴とする請求項3に記載の半導体装置の製造方法。 - 前記液体材料には、表面張力調整剤が添加されていることを特徴とする請求項3に記載の半導体装置の製造方法。
- 前記液体材料の付与は、前記液体材料を吐出する液滴吐出装置によって行われることを特徴とする請求項3に記載の半導体装置の製造方法。
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US11/389,078 US7560776B2 (en) | 2005-03-30 | 2006-03-27 | Semiconductor device, electronic apparatus, method of manufacturing semiconductor device, and method of manufacturing electronic apparatus |
CNB2006100841962A CN100461459C (zh) | 2005-03-30 | 2006-03-30 | 半导体装置的制造方法及电子设备的制造方法 |
KR1020060028922A KR100770729B1 (ko) | 2005-03-30 | 2006-03-30 | 반도체 장치의 제조 방법 및 전자 기기의 제조 방법 |
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JP2004063975A (ja) | 2002-07-31 | 2004-02-26 | Mitsubishi Chemicals Corp | 電界効果トランジスタ |
JP2005340410A (ja) | 2004-05-26 | 2005-12-08 | Canon Inc | 電界効果トランジスタ及び電界効果トランジスタの製造方法 |
KR100659061B1 (ko) * | 2004-09-20 | 2006-12-19 | 삼성에스디아이 주식회사 | 유기 박막 트랜지스터 및 이를 구비한 평판표시장치 |
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2006
- 2006-03-27 US US11/389,078 patent/US7560776B2/en not_active Expired - Fee Related
- 2006-03-30 CN CNB2006100841962A patent/CN100461459C/zh active Active
- 2006-03-30 KR KR1020060028922A patent/KR100770729B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02206132A (ja) * | 1989-02-06 | 1990-08-15 | Casio Comput Co Ltd | 薄膜トランジスタ |
JPH02224275A (ja) * | 1989-02-27 | 1990-09-06 | Hitachi Ltd | 薄膜トランジスタ |
WO2000059040A1 (en) * | 1999-03-30 | 2000-10-05 | Seiko Epson Corporation | Method of manufacturing thin-film transistor |
WO2003098696A1 (en) * | 2002-05-17 | 2003-11-27 | Seiko Epson Corporation | Circuit fabrication method |
Also Published As
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US20060220022A1 (en) | 2006-10-05 |
KR100770729B1 (ko) | 2007-10-30 |
US7560776B2 (en) | 2009-07-14 |
JP2006278984A (ja) | 2006-10-12 |
KR20060105576A (ko) | 2006-10-11 |
CN100461459C (zh) | 2009-02-11 |
CN1848456A (zh) | 2006-10-18 |
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