JP4676437B2 - 共振器構造体及びそれを製造する方法 - Google Patents
共振器構造体及びそれを製造する方法 Download PDFInfo
- Publication number
- JP4676437B2 JP4676437B2 JP2006530920A JP2006530920A JP4676437B2 JP 4676437 B2 JP4676437 B2 JP 4676437B2 JP 2006530920 A JP2006530920 A JP 2006530920A JP 2006530920 A JP2006530920 A JP 2006530920A JP 4676437 B2 JP4676437 B2 JP 4676437B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- resonator
- electrode layer
- bottom electrode
- top electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 238000000034 method Methods 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 11
- 230000008878 coupling Effects 0.000 claims description 8
- 238000010168 coupling process Methods 0.000 claims description 8
- 238000005859 coupling reaction Methods 0.000 claims description 8
- 238000013461 design Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 28
- 235000012239 silicon dioxide Nutrition 0.000 description 15
- 229910004298 SiO 2 Inorganic materials 0.000 description 14
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 13
- 239000000377 silicon dioxide Substances 0.000 description 13
- 239000006185 dispersion Substances 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 230000005684 electric field Effects 0.000 description 7
- 230000004044 response Effects 0.000 description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- 230000002238 attenuated effect Effects 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 230000000644 propagated effect Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000004964 aerogel Substances 0.000 description 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- -1 for example Chemical compound 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0421—Modification of the thickness of an element
- H03H2003/0428—Modification of the thickness of an element of an electrode
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
100' 共振子構造体、特に第二の共振子
10 基板
12 基板10内のエアギャップ
13 基板10とボトム電極30との間のエアギャップ
15 エアギャップ13の端部における支持層
20 反射体又は反射体スタック、特に膜
20' 反射体又は反射体スタック、特に 音響不整合層22及び24のセット
22 低機械インピダンスの反射体層
24 高機械インピダンスの反射体層
30 ボトム電極層、特にボトム電極
32 ボトム電極層30における段差
40 圧電層、特にC軸垂直圧電層
50 トップ電極層、特にトップ電極
50p 厚いトップ電極層、特に並列共振子又は分路共振子上にもたらされる厚いトップメタル層
50s 薄いトップ電極層、特に直列共振子上にもたらされる薄いトップメタル層
52 トップ電極層50のパッド
54 トップ電極層50の段差
61 誘電層63における段差
63 (ボトム電極層30に関連する)誘電層
65 (トップ電極層50に関連する)誘電層
67 誘電層65における段差
70 質量負荷層
72 質量負荷層70における段差
80 場、特に第一の共振子100の音場
80' 場、特に第二の共振子100'の音場
200 音響結合された共振子フィルタ
C0 静的容量(図3参照:従来技術)
C1 動的容量(図3参照:従来技術)
Cp 基板10における迷走電界による容量(図3参照:従来技術)
g 共振子100と100'との間の距離
l 共振子100と100'との長さ
L1 動的インダクタンス(図3参照:従来技術)
Ls 電極及び相互接続部におけるインダクタンス(図3参照:従来技術)
R1 動的抵抗(図3参照:従来技術)
Rp 基板10における迷走電界による抵抗(図3参照:従来技術)
Rs 電極30, 50, 50p, 50s, 52, 及び相互接続部におけるオーミック抵抗(図3参照:従来技術)
t 共振子100, 100'の厚さ
w 共振子100, 100'の幅
Claims (9)
- 特にフィルムバルク音響波共振子又は固定実装バルク音響波共振子のようなバルク音響波共振子になる共振子構造体であって、少なくとも一つの基板と、前記基板上にもたらされるか、又は堆積される少なくとも一つの反射体層と、前記反射体層上にもたらされるか、又は堆積される少なくとも一つのボトム電極層、特にボトム電極と、前記ボトム電極層上にもたらされるか、又は堆積される少なくとも一つの圧電層、特にC軸垂直圧電層と、前記圧電層が前記ボトム電極層とトップ電極層との間にもたらされるように前記ボトム電極層上及び/又は前記圧電層上にもたらされるか、又は堆積される少なくとも一つの当該トップ電極層、特にトップ電極とを有する共振子構造体において、
少なくとも一つの誘電層が、前記ボトム電極層と前記トップ電極層との間の非オーバラップ部の少なくとも一つの領域における少なくとも一つの空間上及び/又は少なくとも一つの空間内にもたらされるか、又は堆積されており、当該共振子構造体にて前記誘電層と前記ボトム電極層及び/又は前記トップ電極層における前記誘電層に隣接する部分との間の接点で前記ボトム電極層及び/又は前記トップ電極層に如何なる段差も存在しないよう前記ボトム電極層及び/又は前記トップ電極層を平坦化するようにしたことを特徴とする共振子構造体。 - 前記ボトム電極層と前記トップ電極層との間の非オーバラップ部の領域の全厚さは、前記ボトム電極層と前記トップ電極層との間のオーバラップ部の領域の全厚さに等しくなり、それ故に前記共振子構造体の平坦化が含まれる態様、又は前記ボトム電極層と前記トップ電極層との間の非オーバラップ部の領域において堆積される前記誘電層の厚さは、平坦化のために要求される厚さ以外で選択される態様で前記誘電層は堆積される請求項1に記載の共振子構造体。
- 前記トップ電極層及び/又は前記誘電層の上にもたらされる少なくとも一つの質量負荷層によって特徴付けられる請求項1又は2に記載の共振子構造体。
- 前記質量負荷層及び/又は前記誘電層及び/又は前記トップ電極層は、少なくとも一つの並列共振子の少なくとも一つの領域において厚くされることが可能であり、及び/又は前記質量負荷層及び/又は前記誘電層は、少なくとも一つの直列共振子の少なくとも一つの領域において薄くされ、開口され、及び/又は除去されることが可能である請求項3に記載の共振子構造体。
- 前記共振子構造体は少なくとも一つの丸い端部を有し、及び/又は前記トップ電極層は前記ボトム電極層よりも小さくなる請求項1乃至4の何れか一項に記載の共振子構造体。
- 請求項1乃至5の少なくとも一項に記載の少なくとも一つの共振子構造体を有するフィルタ。
- マスク設計ルールとの適合性及び適切な音響結合をもたらすように調整される前記共振子構造体の間のギャップの幅を備える一つよりも多くの密に空間配置された共振子構造体によって特徴付けられる請求項6に記載のフィルタ。
- 特にフィルムバルク音響波共振子又は固定実装バルク音響波共振子のようなバルク音響波共振子になる、請求項1に記載の共振子構造体を製造する方法であって、少なくとも一つの基板上に少なくとも一つの反射体層をもたらすか、又は堆積するステップと、前記反射体層上に少なくとも一つのボトム電極層、特にボトム電極をもたらすか、又は堆積するステップと、前記ボトム電極層上に少なくとも一つの圧電層、特にC軸垂直圧電層をもたらすか、又は堆積するステップと、前記圧電層が前記ボトム電極層とトップ電極層との間にもたらされるように前記ボトム電極層上及び/又は前記圧電層上に少なくとも一つの当該トップ電極層、特にトップ電極をもたらすか、又は堆積するステップとを有する方法において、前記ボトム電極層と前記トップ電極層との間の非オーバラップ部の少なくとも一つの領域における少なくとも一つの空間上及び/又は少なくとも一つの空間内に少なくとも一つの前記誘電層をもたらすか、又は堆積する少なくとも一つの更なるステップによって特徴付けられる方法。
- 前記トップ電極層及び/又は前記誘電層の上に少なくとも一つの質量負荷層をもたらすか、又は堆積し、少なくとも一つの直列共振子の少なくとも一つの領域における前記誘電層及び/又は前記質量負荷層を開口及び/又は除去することが可能であり、及び/又は少なくとも一つの並列共振子の少なくとも一つの領域における前記質量負荷層及び/又は前記誘電層を厚くすることが可能である少なくとも一つの更なるステップによって特徴付けられる請求項8に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03103694 | 2003-10-06 | ||
PCT/IB2004/051867 WO2005034345A1 (en) | 2003-10-06 | 2004-09-27 | Resonator structure and method of producing it |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007507960A JP2007507960A (ja) | 2007-03-29 |
JP4676437B2 true JP4676437B2 (ja) | 2011-04-27 |
Family
ID=34400559
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006530920A Expired - Fee Related JP4676437B2 (ja) | 2003-10-06 | 2004-09-27 | 共振器構造体及びそれを製造する方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7466213B2 (ja) |
EP (1) | EP1702407A1 (ja) |
JP (1) | JP4676437B2 (ja) |
KR (1) | KR101130145B1 (ja) |
CN (1) | CN100583626C (ja) |
WO (1) | WO2005034345A1 (ja) |
Families Citing this family (181)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100107389A1 (en) * | 2002-01-11 | 2010-05-06 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Method of fabricating an electrode for a bulk acoustic resonator |
US8981876B2 (en) | 2004-11-15 | 2015-03-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Piezoelectric resonator structures and electrical filters having frame elements |
US7791434B2 (en) * | 2004-12-22 | 2010-09-07 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric |
US7825543B2 (en) | 2005-07-12 | 2010-11-02 | Massachusetts Institute Of Technology | Wireless energy transfer |
AU2006269374C1 (en) | 2005-07-12 | 2010-03-25 | Massachusetts Institute Of Technology | Wireless non-radiative energy transfer |
US8008993B2 (en) | 2005-09-30 | 2011-08-30 | Nxp B.V. | Thin-film bulk-acoustic wave (BAW) resonators |
US7675388B2 (en) * | 2006-03-07 | 2010-03-09 | Agile Rf, Inc. | Switchable tunable acoustic resonator using BST material |
US7847656B2 (en) * | 2006-07-27 | 2010-12-07 | Georgia Tech Research Corporation | Monolithic thin-film piezoelectric filters |
KR100780842B1 (ko) * | 2006-12-14 | 2007-11-30 | 주식회사 에스세라 | 공진 구조체를 가지는 압전 공진자의 형성방법들 |
US8805530B2 (en) | 2007-06-01 | 2014-08-12 | Witricity Corporation | Power generation for implantable devices |
US9421388B2 (en) | 2007-06-01 | 2016-08-23 | Witricity Corporation | Power generation for implantable devices |
WO2009020022A1 (ja) * | 2007-08-03 | 2009-02-12 | Daishinku Corporation | 圧電振動子 |
DE112008002726T5 (de) * | 2007-10-18 | 2010-08-26 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | BAW-Struktur mit reduzierten topografischen Stufen und verwandtes Verfahren |
US8512800B2 (en) | 2007-12-04 | 2013-08-20 | Triquint Semiconductor, Inc. | Optimal acoustic impedance materials for polished substrate coating to suppress passband ripple in BAW resonators and filters |
WO2009133511A1 (en) * | 2008-04-29 | 2009-11-05 | Nxp B.V. | Bulk acoustic wave resonator |
CA2724341C (en) | 2008-05-14 | 2016-07-05 | Massachusetts Institute Of Technology | Wireless energy transfer, including interference enhancement |
DE102008029185A1 (de) * | 2008-06-19 | 2009-12-24 | Epcos Ag | Piezoelektrisches Bauelement und Verfahren zur Herstellung eines elektrischen Kontaktes |
US9184595B2 (en) | 2008-09-27 | 2015-11-10 | Witricity Corporation | Wireless energy transfer in lossy environments |
US9744858B2 (en) | 2008-09-27 | 2017-08-29 | Witricity Corporation | System for wireless energy distribution in a vehicle |
US9601270B2 (en) | 2008-09-27 | 2017-03-21 | Witricity Corporation | Low AC resistance conductor designs |
US8461721B2 (en) | 2008-09-27 | 2013-06-11 | Witricity Corporation | Wireless energy transfer using object positioning for low loss |
US9106203B2 (en) | 2008-09-27 | 2015-08-11 | Witricity Corporation | Secure wireless energy transfer in medical applications |
US9318922B2 (en) | 2008-09-27 | 2016-04-19 | Witricity Corporation | Mechanically removable wireless power vehicle seat assembly |
US9160203B2 (en) | 2008-09-27 | 2015-10-13 | Witricity Corporation | Wireless powered television |
US8772973B2 (en) | 2008-09-27 | 2014-07-08 | Witricity Corporation | Integrated resonator-shield structures |
US8928276B2 (en) | 2008-09-27 | 2015-01-06 | Witricity Corporation | Integrated repeaters for cell phone applications |
US8669676B2 (en) | 2008-09-27 | 2014-03-11 | Witricity Corporation | Wireless energy transfer across variable distances using field shaping with magnetic materials to improve the coupling factor |
US8963488B2 (en) | 2008-09-27 | 2015-02-24 | Witricity Corporation | Position insensitive wireless charging |
US8471410B2 (en) | 2008-09-27 | 2013-06-25 | Witricity Corporation | Wireless energy transfer over distance using field shaping to improve the coupling factor |
US8901778B2 (en) | 2008-09-27 | 2014-12-02 | Witricity Corporation | Wireless energy transfer with variable size resonators for implanted medical devices |
US9396867B2 (en) | 2008-09-27 | 2016-07-19 | Witricity Corporation | Integrated resonator-shield structures |
US9577436B2 (en) | 2008-09-27 | 2017-02-21 | Witricity Corporation | Wireless energy transfer for implantable devices |
US9515494B2 (en) | 2008-09-27 | 2016-12-06 | Witricity Corporation | Wireless power system including impedance matching network |
US8692410B2 (en) | 2008-09-27 | 2014-04-08 | Witricity Corporation | Wireless energy transfer with frequency hopping |
US8487480B1 (en) | 2008-09-27 | 2013-07-16 | Witricity Corporation | Wireless energy transfer resonator kit |
US8598743B2 (en) | 2008-09-27 | 2013-12-03 | Witricity Corporation | Resonator arrays for wireless energy transfer |
US9601266B2 (en) | 2008-09-27 | 2017-03-21 | Witricity Corporation | Multiple connected resonators with a single electronic circuit |
US8901779B2 (en) | 2008-09-27 | 2014-12-02 | Witricity Corporation | Wireless energy transfer with resonator arrays for medical applications |
US8569914B2 (en) | 2008-09-27 | 2013-10-29 | Witricity Corporation | Wireless energy transfer using object positioning for improved k |
US8692412B2 (en) | 2008-09-27 | 2014-04-08 | Witricity Corporation | Temperature compensation in a wireless transfer system |
US8466583B2 (en) | 2008-09-27 | 2013-06-18 | Witricity Corporation | Tunable wireless energy transfer for outdoor lighting applications |
US9246336B2 (en) | 2008-09-27 | 2016-01-26 | Witricity Corporation | Resonator optimizations for wireless energy transfer |
US8461720B2 (en) | 2008-09-27 | 2013-06-11 | Witricity Corporation | Wireless energy transfer using conducting surfaces to shape fields and reduce loss |
US9093853B2 (en) | 2008-09-27 | 2015-07-28 | Witricity Corporation | Flexible resonator attachment |
US8497601B2 (en) | 2008-09-27 | 2013-07-30 | Witricity Corporation | Wireless energy transfer converters |
US8937408B2 (en) | 2008-09-27 | 2015-01-20 | Witricity Corporation | Wireless energy transfer for medical applications |
US8947186B2 (en) | 2008-09-27 | 2015-02-03 | Witricity Corporation | Wireless energy transfer resonator thermal management |
US8587153B2 (en) | 2008-09-27 | 2013-11-19 | Witricity Corporation | Wireless energy transfer using high Q resonators for lighting applications |
US8461722B2 (en) | 2008-09-27 | 2013-06-11 | Witricity Corporation | Wireless energy transfer using conducting surfaces to shape field and improve K |
US8933594B2 (en) | 2008-09-27 | 2015-01-13 | Witricity Corporation | Wireless energy transfer for vehicles |
US8304935B2 (en) | 2008-09-27 | 2012-11-06 | Witricity Corporation | Wireless energy transfer using field shaping to reduce loss |
US8922066B2 (en) | 2008-09-27 | 2014-12-30 | Witricity Corporation | Wireless energy transfer with multi resonator arrays for vehicle applications |
US8324759B2 (en) | 2008-09-27 | 2012-12-04 | Witricity Corporation | Wireless energy transfer using magnetic materials to shape field and reduce loss |
US8907531B2 (en) | 2008-09-27 | 2014-12-09 | Witricity Corporation | Wireless energy transfer with variable size resonators for medical applications |
US8410636B2 (en) | 2008-09-27 | 2013-04-02 | Witricity Corporation | Low AC resistance conductor designs |
US8643326B2 (en) | 2008-09-27 | 2014-02-04 | Witricity Corporation | Tunable wireless energy transfer systems |
US9105959B2 (en) | 2008-09-27 | 2015-08-11 | Witricity Corporation | Resonator enclosure |
US9601261B2 (en) | 2008-09-27 | 2017-03-21 | Witricity Corporation | Wireless energy transfer using repeater resonators |
US9544683B2 (en) | 2008-09-27 | 2017-01-10 | Witricity Corporation | Wirelessly powered audio devices |
US9035499B2 (en) | 2008-09-27 | 2015-05-19 | Witricity Corporation | Wireless energy transfer for photovoltaic panels |
US9065423B2 (en) | 2008-09-27 | 2015-06-23 | Witricity Corporation | Wireless energy distribution system |
US8686598B2 (en) | 2008-09-27 | 2014-04-01 | Witricity Corporation | Wireless energy transfer for supplying power and heat to a device |
US8587155B2 (en) | 2008-09-27 | 2013-11-19 | Witricity Corporation | Wireless energy transfer using repeater resonators |
US8946938B2 (en) | 2008-09-27 | 2015-02-03 | Witricity Corporation | Safety systems for wireless energy transfer in vehicle applications |
US8723366B2 (en) | 2008-09-27 | 2014-05-13 | Witricity Corporation | Wireless energy transfer resonator enclosures |
US8552592B2 (en) | 2008-09-27 | 2013-10-08 | Witricity Corporation | Wireless energy transfer with feedback control for lighting applications |
US8912687B2 (en) | 2008-09-27 | 2014-12-16 | Witricity Corporation | Secure wireless energy transfer for vehicle applications |
US8629578B2 (en) | 2008-09-27 | 2014-01-14 | Witricity Corporation | Wireless energy transfer systems |
US8400017B2 (en) | 2008-09-27 | 2013-03-19 | Witricity Corporation | Wireless energy transfer for computer peripheral applications |
US8476788B2 (en) | 2008-09-27 | 2013-07-02 | Witricity Corporation | Wireless energy transfer with high-Q resonators using field shaping to improve K |
US8957549B2 (en) | 2008-09-27 | 2015-02-17 | Witricity Corporation | Tunable wireless energy transfer for in-vehicle applications |
US8482158B2 (en) | 2008-09-27 | 2013-07-09 | Witricity Corporation | Wireless energy transfer using variable size resonators and system monitoring |
CN107026511A (zh) | 2008-09-27 | 2017-08-08 | 韦特里西提公司 | 无线能量转移*** |
US8441154B2 (en) | 2008-09-27 | 2013-05-14 | Witricity Corporation | Multi-resonator wireless energy transfer for exterior lighting |
EP2345100B1 (en) | 2008-10-01 | 2018-12-05 | Massachusetts Institute of Technology | Efficient near-field wireless energy transfer using adiabatic system variations |
US8902023B2 (en) | 2009-06-24 | 2014-12-02 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator structure having an electrode with a cantilevered portion |
US8248185B2 (en) | 2009-06-24 | 2012-08-21 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic resonator structure comprising a bridge |
US9520856B2 (en) | 2009-06-24 | 2016-12-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator structure having an electrode with a cantilevered portion |
EP2299593A1 (en) | 2009-09-18 | 2011-03-23 | Nxp B.V. | Laterally coupled bulk acoustic wave device |
FR2951024B1 (fr) * | 2009-10-01 | 2012-03-23 | St Microelectronics Sa | Procede de fabrication de resonateur baw a facteur de qualite eleve |
FR2951026B1 (fr) * | 2009-10-01 | 2011-12-02 | St Microelectronics Sa | Procede de fabrication de resonateurs baw sur une tranche semiconductrice |
US8692631B2 (en) * | 2009-10-12 | 2014-04-08 | Hao Zhang | Bulk acoustic wave resonator and method of fabricating same |
US9450561B2 (en) | 2009-11-25 | 2016-09-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave (BAW) resonator structure having an electrode with a cantilevered portion and a piezoelectric layer with varying amounts of dopant |
US9219464B2 (en) | 2009-11-25 | 2015-12-22 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave (BAW) resonator structure having an electrode with a cantilevered portion and a piezoelectric layer with multiple dopants |
US9243316B2 (en) | 2010-01-22 | 2016-01-26 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Method of fabricating piezoelectric material with selected c-axis orientation |
US8796904B2 (en) | 2011-10-31 | 2014-08-05 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer |
FI123640B (fi) * | 2010-04-23 | 2013-08-30 | Teknologian Tutkimuskeskus Vtt | Laajakaistainen akustisesti kytketty ohutkalvo-BAW-suodin |
CN101924529B (zh) * | 2010-08-31 | 2012-10-10 | 庞慰 | 压电谐振器结构 |
US9602168B2 (en) | 2010-08-31 | 2017-03-21 | Witricity Corporation | Communication in wireless energy transfer systems |
FI20106063A (fi) | 2010-10-14 | 2012-06-08 | Valtion Teknillinen | Akustisesti kytketty laajakaistainen ohutkalvo-BAW-suodatin |
US8962443B2 (en) | 2011-01-31 | 2015-02-24 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Semiconductor device having an airbridge and method of fabricating the same |
US9083302B2 (en) | 2011-02-28 | 2015-07-14 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Stacked bulk acoustic resonator comprising a bridge and an acoustic reflector along a perimeter of the resonator |
US9203374B2 (en) | 2011-02-28 | 2015-12-01 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Film bulk acoustic resonator comprising a bridge |
US9571064B2 (en) | 2011-02-28 | 2017-02-14 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator device with at least one air-ring and frame |
US9425764B2 (en) | 2012-10-25 | 2016-08-23 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accoustic resonator having composite electrodes with integrated lateral features |
US9136818B2 (en) | 2011-02-28 | 2015-09-15 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Stacked acoustic resonator comprising a bridge |
US9099983B2 (en) | 2011-02-28 | 2015-08-04 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave resonator device comprising a bridge in an acoustic reflector |
US9048812B2 (en) | 2011-02-28 | 2015-06-02 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer |
US9991871B2 (en) | 2011-02-28 | 2018-06-05 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave resonator comprising a ring |
US9148117B2 (en) | 2011-02-28 | 2015-09-29 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Coupled resonator filter comprising a bridge and frame elements |
US9154112B2 (en) | 2011-02-28 | 2015-10-06 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Coupled resonator filter comprising a bridge |
US9484882B2 (en) * | 2013-02-14 | 2016-11-01 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator having temperature compensation |
US9490418B2 (en) | 2011-03-29 | 2016-11-08 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising collar and acoustic reflector with temperature compensating layer |
US9590165B2 (en) | 2011-03-29 | 2017-03-07 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising aluminum scandium nitride and temperature compensation feature |
US9490770B2 (en) | 2011-03-29 | 2016-11-08 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising temperature compensating layer and perimeter distributed bragg reflector |
US9246473B2 (en) | 2011-03-29 | 2016-01-26 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising collar, frame and perimeter distributed bragg reflector |
US8575820B2 (en) | 2011-03-29 | 2013-11-05 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Stacked bulk acoustic resonator |
US9748918B2 (en) | 2013-02-14 | 2017-08-29 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising integrated structures for improved performance |
US9525397B2 (en) | 2011-03-29 | 2016-12-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising acoustic reflector, frame and collar |
US9490771B2 (en) | 2012-10-29 | 2016-11-08 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising collar and frame |
US9401692B2 (en) | 2012-10-29 | 2016-07-26 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator having collar structure |
US9444426B2 (en) | 2012-10-25 | 2016-09-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accoustic resonator having integrated lateral feature and temperature compensation feature |
US9917567B2 (en) | 2011-05-20 | 2018-03-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator comprising aluminum scandium nitride |
US9154111B2 (en) | 2011-05-20 | 2015-10-06 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Double bulk acoustic resonator comprising aluminum scandium nitride |
US8350445B1 (en) | 2011-06-16 | 2013-01-08 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator comprising non-piezoelectric layer and bridge |
US9473106B2 (en) * | 2011-06-21 | 2016-10-18 | Georgia Tech Research Corporation | Thin-film bulk acoustic wave delay line |
US9948145B2 (en) | 2011-07-08 | 2018-04-17 | Witricity Corporation | Wireless power transfer for a seat-vest-helmet system |
EP2764604B1 (en) | 2011-08-04 | 2018-07-04 | WiTricity Corporation | Tunable wireless power architectures |
ES2558182T3 (es) | 2011-09-09 | 2016-02-02 | Witricity Corporation | Detección de objetos extraños en sistemas de transferencia de energía inalámbricos |
US20130062966A1 (en) | 2011-09-12 | 2013-03-14 | Witricity Corporation | Reconfigurable control architectures and algorithms for electric vehicle wireless energy transfer systems |
US9318257B2 (en) | 2011-10-18 | 2016-04-19 | Witricity Corporation | Wireless energy transfer for packaging |
JP2015502729A (ja) | 2011-11-04 | 2015-01-22 | ワイトリシティ コーポレーションWitricity Corporation | 無線エネルギー伝送モデリングツール |
FI124732B (en) * | 2011-11-11 | 2014-12-31 | Teknologian Tutkimuskeskus Vtt | Laterally connected bulk wave filter with improved passband characteristics |
KR101856060B1 (ko) | 2011-12-01 | 2018-05-10 | 삼성전자주식회사 | 체적 음향 공진기 |
US9508488B2 (en) * | 2012-01-10 | 2016-11-29 | Samsung Electronics Co., Ltd. | Resonant apparatus for wireless power transfer |
RU2481699C1 (ru) * | 2012-01-10 | 2013-05-10 | Корпорация "САМСУНГ ЭЛЕКТРОНИКС Ко., Лтд." | Резонансная структура на основе объемного акустического резонатора |
US9306635B2 (en) | 2012-01-26 | 2016-04-05 | Witricity Corporation | Wireless energy transfer with reduced fields |
US9608592B2 (en) | 2014-01-21 | 2017-03-28 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Film bulk acoustic wave resonator (FBAR) having stress-relief |
US9007141B2 (en) * | 2012-05-23 | 2015-04-14 | Nxp B.V. | Interface for communication between voltage domains |
US9343922B2 (en) | 2012-06-27 | 2016-05-17 | Witricity Corporation | Wireless energy transfer for rechargeable batteries |
US9287607B2 (en) | 2012-07-31 | 2016-03-15 | Witricity Corporation | Resonator fine tuning |
US9595378B2 (en) | 2012-09-19 | 2017-03-14 | Witricity Corporation | Resonator enclosure |
US9404954B2 (en) | 2012-10-19 | 2016-08-02 | Witricity Corporation | Foreign object detection in wireless energy transfer systems |
US9842684B2 (en) | 2012-11-16 | 2017-12-12 | Witricity Corporation | Systems and methods for wireless power system with improved performance and/or ease of use |
CN103929148B (zh) * | 2013-01-11 | 2017-09-19 | 中兴通讯股份有限公司 | 一种低插损压电声波带通滤波器及实现方法 |
US9450565B2 (en) * | 2013-03-12 | 2016-09-20 | Qorvo Us, Inc. | Border ring mode suppression in solidly-mounted bulk acoustic wave resonator |
US9857821B2 (en) | 2013-08-14 | 2018-01-02 | Witricity Corporation | Wireless power transfer frequency adjustment |
US9780573B2 (en) | 2014-02-03 | 2017-10-03 | Witricity Corporation | Wirelessly charged battery system |
WO2015123614A2 (en) | 2014-02-14 | 2015-08-20 | Witricity Corporation | Object detection for wireless energy transfer systems |
US9842687B2 (en) | 2014-04-17 | 2017-12-12 | Witricity Corporation | Wireless power transfer systems with shaped magnetic components |
WO2015161035A1 (en) | 2014-04-17 | 2015-10-22 | Witricity Corporation | Wireless power transfer systems with shield openings |
US9401691B2 (en) | 2014-04-30 | 2016-07-26 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator device with air-ring and temperature compensating layer |
US9837860B2 (en) | 2014-05-05 | 2017-12-05 | Witricity Corporation | Wireless power transmission systems for elevators |
US10018744B2 (en) | 2014-05-07 | 2018-07-10 | Witricity Corporation | Foreign object detection in wireless energy transfer systems |
US9954375B2 (en) | 2014-06-20 | 2018-04-24 | Witricity Corporation | Wireless power transfer systems for surfaces |
US10574091B2 (en) | 2014-07-08 | 2020-02-25 | Witricity Corporation | Enclosures for high power wireless power transfer systems |
CN107258046B (zh) | 2014-07-08 | 2020-07-17 | 无线电力公司 | 无线电力传送***中的谐振器均衡 |
US9843217B2 (en) | 2015-01-05 | 2017-12-12 | Witricity Corporation | Wireless energy transfer for wearables |
US9985194B1 (en) | 2015-05-13 | 2018-05-29 | Qorvo Us, Inc. | Spurious mode suppression in bulk acoustic wave resonator |
WO2017062647A1 (en) | 2015-10-06 | 2017-04-13 | Witricity Corporation | Rfid tag and transponder detection in wireless energy transfer systems |
WO2017066322A2 (en) | 2015-10-14 | 2017-04-20 | Witricity Corporation | Phase and amplitude detection in wireless energy transfer systems |
WO2017070227A1 (en) | 2015-10-19 | 2017-04-27 | Witricity Corporation | Foreign object detection in wireless energy transfer systems |
US10141788B2 (en) | 2015-10-22 | 2018-11-27 | Witricity Corporation | Dynamic tuning in wireless energy transfer systems |
US9525393B1 (en) | 2015-11-13 | 2016-12-20 | Resonant Inc. | Technique for designing acoustic microwave filters using lcr-based resonator models |
US10075019B2 (en) | 2015-11-20 | 2018-09-11 | Witricity Corporation | Voltage source isolation in wireless power transfer systems |
US10164605B2 (en) | 2016-01-26 | 2018-12-25 | Avago Technologies International Sales Pte. Limited | Bulk acoustic wave resonator with piezoelectric layer comprising lithium niobate or lithium tantalate |
US10263473B2 (en) | 2016-02-02 | 2019-04-16 | Witricity Corporation | Controlling wireless power transfer systems |
US10063104B2 (en) | 2016-02-08 | 2018-08-28 | Witricity Corporation | PWM capacitor control |
US10110190B2 (en) * | 2016-11-02 | 2018-10-23 | Akoustis, Inc. | Structure and method of manufacture for acoustic resonator or filter devices using improved fabrication conditions and perimeter structure modifications |
CN107196623B (zh) * | 2016-03-15 | 2021-03-12 | 络达科技股份有限公司 | 具主动校准机制的声波装置 |
US10848127B2 (en) | 2016-09-30 | 2020-11-24 | Intel Corporation | Film bulk acoustic resonator (FBAR) RF filter having epitaxial layers |
KR102243352B1 (ko) * | 2017-06-23 | 2021-04-21 | 가부시키가이샤 무라타 세이사쿠쇼 | 탄성파 장치, 고주파 프론트엔드 회로 및 통신 장치 |
EP3646434A1 (en) | 2017-06-29 | 2020-05-06 | Witricity Corporation | Protection and control of wireless power systems |
US10277194B2 (en) | 2017-09-15 | 2019-04-30 | Globalfoundries Singapore Pte. Ltd. | Acoustic MEMs resonator and filter with fractal electrode and method for producing the same |
US11271543B2 (en) * | 2018-02-13 | 2022-03-08 | Samsung Electro-Mechanics Co., Ltd. | Bulk acoustic wave resonator |
US11233496B2 (en) | 2018-02-21 | 2022-01-25 | Vanguard International Semiconductor Singapore Pte. Ltd. | Acoustic resonator and filter with electrode having zig-zag edge and method for producing the same |
JP2019146095A (ja) * | 2018-02-23 | 2019-08-29 | パイオニア株式会社 | デバイス、圧電デバイス、及び電極パッド |
FR3079346B1 (fr) * | 2018-03-26 | 2020-05-29 | Soitec | Procede de fabrication d'un substrat donneur pour le transfert d'une couche piezoelectrique, et procede de transfert d'une telle couche piezoelectrique |
US10630256B2 (en) | 2018-09-07 | 2020-04-21 | Vtt Technical Research Centre Of Finland Ltd | Two-stage lateral bulk acoustic wave filter |
WO2020097829A1 (zh) * | 2018-11-14 | 2020-05-22 | 开元通信技术(厦门)有限公司 | 薄膜体声波谐振器及其制作方法、滤波器 |
CN109474255B (zh) * | 2018-11-14 | 2021-03-02 | 开元通信技术(厦门)有限公司 | 薄膜体声波谐振器及其制作方法、滤波器 |
CN109756203B (zh) * | 2018-11-28 | 2020-12-15 | 广州市艾佛光通科技有限公司 | 一种fbar谐振频率和振荡薄膜各层厚度对应关系建立方法 |
KR102272592B1 (ko) | 2019-01-31 | 2021-07-05 | 삼성전기주식회사 | 체적 음향 공진기 |
EP3966932A4 (en) * | 2019-05-06 | 2023-05-10 | Qorvo Biotechnologies, LLC | ACOUSTIC RESONATOR DEVICE |
CN111211757B (zh) * | 2020-02-05 | 2024-03-15 | 见闻录(浙江)半导体有限公司 | 一种体声波谐振器的顶电极结构及制作工艺 |
JP6947867B2 (ja) * | 2020-03-24 | 2021-10-13 | デクセリアルズ株式会社 | バルク波共振子および帯域通過フィルタ |
CN112117988B (zh) * | 2020-06-09 | 2024-06-18 | 中芯集成电路(宁波)有限公司上海分公司 | 体声波谐振器及其制造方法、滤波器、电子设备 |
CN111884791B (zh) * | 2020-07-01 | 2021-08-10 | 诺思(天津)微***有限责任公司 | 一种双工器、多工器及通信装置 |
KR20220050550A (ko) * | 2020-10-16 | 2022-04-25 | 경희대학교 산학협력단 | 정전 발전기 |
WO2022220155A1 (ja) * | 2021-04-16 | 2022-10-20 | 株式会社村田製作所 | 弾性波装置 |
KR102655050B1 (ko) * | 2023-12-06 | 2024-04-04 | 한국세라믹기술원 | 샌드위치 구조를 갖는 버티컬 타입의 벌크 음향파 마이크로 유체 필터링 모듈 및 그 제조 방법 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001089236A (ja) * | 1999-07-07 | 2001-04-03 | Koninkl Philips Electronics Nv | バルク音響波フィルタ |
JP2001326553A (ja) * | 2000-05-17 | 2001-11-22 | Murata Mfg Co Ltd | 圧電フィルタ、通信装置および圧電フィルタの製造方法 |
JP2003133892A (ja) * | 2001-10-29 | 2003-05-09 | Tdk Corp | 圧電薄膜振動素子、及びこれを用いたフィルタ |
JP2003198319A (ja) * | 2001-12-26 | 2003-07-11 | Ube Electronics Ltd | 窒化アルミニウム薄膜−金属電極積層体およびそれを用いた薄膜圧電共振子 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999059244A2 (de) | 1998-05-08 | 1999-11-18 | Infineon Technologies Ag | Dünnfilm-piezoresonator |
FI108583B (fi) | 1998-06-02 | 2002-02-15 | Nokia Corp | Resonaattorirakenteita |
FI107660B (fi) | 1999-07-19 | 2001-09-14 | Nokia Mobile Phones Ltd | Resonaattorirakenne |
DE19947081A1 (de) | 1999-09-30 | 2001-04-05 | Infineon Technologies Ag | Akustischer Spiegel und Verfahren zu dessen Herstellung |
WO2001078230A1 (en) * | 2000-04-06 | 2001-10-18 | Koninklijke Philips Electronics N.V. | Tunable filter arrangement |
EP1170862B1 (en) | 2000-06-23 | 2012-10-10 | Murata Manufacturing Co., Ltd. | Piezoelectric resonator and piezoelectric filter using the same |
JP3470691B2 (ja) * | 2000-08-31 | 2003-11-25 | 株式会社村田製作所 | 圧電共振子および圧電フィルタ |
KR100398363B1 (ko) * | 2000-12-05 | 2003-09-19 | 삼성전기주식회사 | Fbar 소자 및 그 제조방법 |
WO2002093740A1 (fr) * | 2001-05-11 | 2002-11-21 | Ube Electronics, Ltd. | Resonateur d'onde acoustique en volume a couche mince |
GB2378013A (en) | 2001-07-27 | 2003-01-29 | Hewlett Packard Co | Trusted computer platform audit system |
DE10155927A1 (de) * | 2001-11-14 | 2003-06-05 | Infineon Technologies Ag | Passivierter BAW-Resonator und BAW-Filter |
DE10200741A1 (de) | 2002-01-11 | 2003-07-24 | Infineon Technologies Ag | Verfahren zur Herstellung einer topologieoptimierten Elektrode für einen Resonator in Dünnfilmtechnologie |
EP1469599B1 (en) * | 2003-04-18 | 2010-11-03 | Samsung Electronics Co., Ltd. | Air gap type FBAR, duplexer using the FBAR, and fabricating methods thereof |
KR101323447B1 (ko) * | 2003-10-06 | 2013-10-29 | 트리퀸트 세미컨덕터 인코퍼레이티드 | 사다리형 필터, 무선 주파수 대역 통과 필터, 무선 주파수 수신기 및 송신기 장치, 무선 주파수 수신기 장치 및 무선 주파수 송신기 장치 |
KR100622398B1 (ko) * | 2005-07-18 | 2006-09-12 | 삼성전자주식회사 | 필름 벌크 음향 공진기 및 그 제조 방법 |
US7362035B2 (en) * | 2005-09-22 | 2008-04-22 | The Penn State Research Foundation | Polymer bulk acoustic resonator |
-
2004
- 2004-09-27 US US10/574,684 patent/US7466213B2/en active Active
- 2004-09-27 JP JP2006530920A patent/JP4676437B2/ja not_active Expired - Fee Related
- 2004-09-27 EP EP04770088A patent/EP1702407A1/en not_active Withdrawn
- 2004-09-27 CN CN200480029158A patent/CN100583626C/zh not_active Expired - Fee Related
- 2004-09-27 KR KR1020067006531A patent/KR101130145B1/ko not_active IP Right Cessation
- 2004-09-27 WO PCT/IB2004/051867 patent/WO2005034345A1/en active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001089236A (ja) * | 1999-07-07 | 2001-04-03 | Koninkl Philips Electronics Nv | バルク音響波フィルタ |
JP2001326553A (ja) * | 2000-05-17 | 2001-11-22 | Murata Mfg Co Ltd | 圧電フィルタ、通信装置および圧電フィルタの製造方法 |
JP2003133892A (ja) * | 2001-10-29 | 2003-05-09 | Tdk Corp | 圧電薄膜振動素子、及びこれを用いたフィルタ |
JP2003198319A (ja) * | 2001-12-26 | 2003-07-11 | Ube Electronics Ltd | 窒化アルミニウム薄膜−金属電極積層体およびそれを用いた薄膜圧電共振子 |
Also Published As
Publication number | Publication date |
---|---|
JP2007507960A (ja) | 2007-03-29 |
KR20060119999A (ko) | 2006-11-24 |
WO2005034345A1 (en) | 2005-04-14 |
CN100583626C (zh) | 2010-01-20 |
CN1864326A (zh) | 2006-11-15 |
EP1702407A1 (en) | 2006-09-20 |
WO2005034345A8 (en) | 2006-07-20 |
US7466213B2 (en) | 2008-12-16 |
KR101130145B1 (ko) | 2012-03-28 |
US20080129414A1 (en) | 2008-06-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4676437B2 (ja) | 共振器構造体及びそれを製造する方法 | |
JP6564096B2 (ja) | 向上した通過帯域特性を有する、横方向に結合されたバルク弾性波フィルタ | |
US8008993B2 (en) | Thin-film bulk-acoustic wave (BAW) resonators | |
JP3735777B2 (ja) | 共振子構造およびその共振子構造を備えるフィルタ | |
CN112673568B (zh) | 用于调整声波谐振器的频率响应的负荷谐振器 | |
US9401692B2 (en) | Acoustic resonator having collar structure | |
US9571063B2 (en) | Acoustic resonator device with structures having different apodized shapes | |
JP4719683B2 (ja) | ラダー型薄膜バルク音響波フィルタ | |
US9385684B2 (en) | Acoustic resonator having guard ring | |
US20130214878A1 (en) | Acoustic Wave Bandpass Filter Comprising Integrated Acoustic Guiding | |
TWI697204B (zh) | 複合基板上的表面聲波裝置 | |
KR20130018399A (ko) | 압전 층 내에 형성된 브리지를 포함하는 벌크 음향파 공진기 | |
JP2021536721A (ja) | 二段横波バルク弾性波フィルタ | |
WO2006126168A1 (en) | Bulk acoustic wave resonator device | |
JP2008507869A (ja) | 体積音波によって作動する共振器 | |
US20210036677A1 (en) | Lateral bulk acoustic wave filter | |
JP2015154492A (ja) | 音響反射器、フレーム、及びカラーを備える音響共振器 | |
Meltaus et al. | Parametric study of laterally acoustically coupled bulk acoustic wave filters | |
JP2022547182A (ja) | 音響波共振器の周波数応答を調整するための負荷をかけられた直列共振器 | |
JP4339604B2 (ja) | 圧電薄膜素子 | |
Jose | Reflector stack optimization for Bulk Acoustic Wave resonators | |
JP4237512B2 (ja) | 圧電薄膜素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20070326 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070927 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20070927 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20080423 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100621 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100629 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20100929 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20101006 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101028 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101124 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101217 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110125 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110127 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140204 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140204 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |