JP4674970B2 - Metal wire bonding method - Google Patents

Metal wire bonding method Download PDF

Info

Publication number
JP4674970B2
JP4674970B2 JP2001001213A JP2001001213A JP4674970B2 JP 4674970 B2 JP4674970 B2 JP 4674970B2 JP 2001001213 A JP2001001213 A JP 2001001213A JP 2001001213 A JP2001001213 A JP 2001001213A JP 4674970 B2 JP4674970 B2 JP 4674970B2
Authority
JP
Japan
Prior art keywords
metal wire
bonding
electrode
tip
bonding tool
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001001213A
Other languages
Japanese (ja)
Other versions
JP2002208609A (en
Inventor
光志 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lapis Semiconductor Co Ltd
Original Assignee
Oki Semiconductor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Semiconductor Co Ltd filed Critical Oki Semiconductor Co Ltd
Priority to JP2001001213A priority Critical patent/JP4674970B2/en
Publication of JP2002208609A publication Critical patent/JP2002208609A/en
Application granted granted Critical
Publication of JP4674970B2 publication Critical patent/JP4674970B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H01L2224/78314—Shape
    • H01L2224/78317—Shape of other portions
    • H01L2224/78318—Shape of other portions inside the capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8593—Reshaping, e.g. for severing the wire, modifying the wedge or ball or the loop shape
    • H01L2224/85947—Reshaping, e.g. for severing the wire, modifying the wedge or ball or the loop shape by mechanical means, e.g. "pull-and-cut", pressing, stamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/2076—Diameter ranges equal to or larger than 100 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は、金属線のボンディング方法に関するものである。
【０００２】
【従来の技術】
従来、一般に、高速動作が要求されるデバイスにおいては、特に、電極配線の電気容量やワイヤインダクタンスを低減するために、金属線をボンディングするための電極パッドの大きさを小さくするとともに、前記電極パッドからアクティブな領域への配線パターンの長さを短くする必要がある。これにより、電極パッドがアクティブな領域に隣接するようなレイアウトになる。また、超ＬＳＩ等においては、多くの電極パッドをチップの外周に沿って配置するようになっているが、該チップの寸法を小さくするためには、電極パッド自体の大きさを小さくする必要がある。
【０００３】
ところが、従来のネイルヘッド型のボンディング方法においては、金属線を押さえ付けるボンディングツールの先端はドーナツ形状をしていて、先端の外径は加工可能な最小寸法を考慮すると、１００ミクロン以上となってしまう。したがって、釘の頭のような形状の金属線の先端部分の径は、１００ミクロン以上となる。
【０００４】
ここで、電極パッドに金属線をボンディングする際（二つの電極間をボンディングする場合）には、まず、金属線の先端をネイルヘッド状、すなわち、釘の頭のような形状にする。
【０００５】
次に、ボンディングツールを垂直に降ろし、第１の電極の電極パッドに前記釘の頭のような形状の金属線の先端を押しつけて、ボンディングする（第１ボンディング）。
【０００６】
その後、金属線をクランプしない状態でボンディングツールを垂直に持ち上げ、半円状に弧を描きながら、次の電極にむけてボンディングツールを降ろす。
【０００７】
続いて、第２の電極の電極パッドに金属線を押しつけてボンディングする（第２ボンディング）。
【０００８】
最後に、金属線をクランプした状態でボンディングツールを垂直に持ち上げることによって、前記金属線を切断する。
【０００９】
この場合、釘の頭のような形状の金属線の先端部分の径が１００ミクロン以上となるので、第１ボンディング用の電極は１００ミクロン角以上の寸法が必要とされ、また、第２ボンディング以降のボンディング面積は１００ミクロン以下にすることができるものの、ボンディングツールの先端部分、すなわち、ツールヘッド自体の大きさ及び形状から、微小電極へのボンディングには不向きである。そして、前述されたように金属線をクランプしない状態でボンディングツールを垂直に持ち上げ、半円状に弧を描きながら次の電極にむけてボンディングツールを降ろす操作においては、半円状の弧を描くようになっているので、電極間の金属線の長さが長くなってしまう。また、第２ボンディング終了後に金属線を切断する操作の際には、金属線はボンディング箇所から直上に数百ミクロン残った状態で切断されてしまうことが多い。
【００１０】
一方、金属線の先端を電極パッド上で押し潰す方式のウェッジ型のボンディング方法の場合、電極パッドに金属線をボンディングする場合（二つの電極間をボンディングする場合）には、まず、ボンディングツールを垂直に降ろし、第１の電極の電極パッドに金属線の先端部分を押しつけてボンディングする（第１ボンディング）。なお、金属線の先端部分はネイルヘッド状になっていない。
【００１１】
続いて、金属線をクランプしない状態でボンディングツールをわずかに持ち上げ、次の電極に向けて、ボンディングツールの奥行き方向にほぼ水平に移動させる。
【００１２】
次に、第２の電極の電極パッドに金属線を押しつけてボンディングする（第２ボンディング）。
【００１３】
最後に、金属線をクランプした状態でボンディングツールを垂直に持ち上げて金属線を切断する。
【００１４】
このようなウェッジ型のボンディング方法の場合、金属線をほぼ水平方向に配線することができる。したがって、前記ネイルヘッド型のボンディング方法と比較して、電極間の金属線の長さを短くすることができる。また、ボンディングツールの先端の金属線を押し潰す部分の形状を電極パッドの形状と合わせることができる。したがって、電極パッドの面積を小さくすることができる。
【００１５】
このようなことから、ウェッジ型のボンディング方法においては、ワイヤインダクタンスを小さくすることができ、また、電極間の容量を小さくすることができる。すなわち、ＬＳＩ等においては、多くの電極を高密度にレイアウトすることができ、また、高速動作が要求される素子に適用する場合には高周波特性を改善することができる。
【００１６】
【発明が解決しようとする課題】
しかしながら、前記従来の金属線のボンディング方法においては、ウェッジ型のボンディング方法の場合、押し潰した部分の金属線が薄く平たくなり、その周辺では薄く折れ曲がってしまう。そして、その後金属線を切断する際にその箇所に引張応力が加わることによって、また、通電によって発生する熱や物理的振動などによって、破断強度が低下してしまう。
【００１７】
また、奥行き方向の電極の高さが手前の電極の高さよりも高い場合には、ボンディング時にボンディングツールの先端のワイヤガイドが後ろ側の電極の下地構造にぶつかってしまうことがある。この場合、ボンディングの位置ずれが発生したり、ボンディング部分の強度が不安定になったりしてしまう。さらに、ボンディングツールの破損や、後ろ側の電極の下地構造の破損を引き起こす可能性が高い。このような現象は、特に、三つの電極間を金属線で接続するときに、真ん中の電極の高さが他の二つの電極の高さよりも低く、かつ、それらの電極が互いに近接して配置されている場合に起こりやすい。
【００１８】
さらに、ウェッジ型のボンディング方法の場合、奥行方向にだけしか金属線を這わすことができないので、微小面積の電極パッドが金属線自体で視覚的に遮断されてしまうので、ボンディング箇所やボンディング操作を十分に監視することができなくなる。したがって、ボンディング位置の再現性が低下してしまう。
【００１９】
本発明は、前記従来の金属線のボンディング方法の問題点を解決して、ボンディング部分の金属線の破断強度が低下することがなく、ボンディングツールの先端部分が電極の下地構造等にぶつかってしまうこともなく、ボンディング箇所やボンディング操作を十分に監視することのできる金属線のボンディング方法を提供することを目的とする。
【００２０】
【課題を解決するための手段】
そのために、本発明の金属線のボンディング方法においては、先端部分に金属線の供給口を備え、該供給口から金属線を供給する第１のボンディングツールを使用し、ウェッジボンディング方法によって、両端に配設された電極に前記金属線をボンディングする第１の工程と、前記第１のボンディングツールを使用し、前記金属線を切断する第２の工程と、先端部分に金属線の供給口を備えておらず、前記先端部分が平坦であり、該先端部分の面積が５０〔μｍ〕角より微小な第２のボンディングツールを使用し、前記先端部分を金属線に押し当てる押当てボンディング方法によって、中間に配設された電極に前記金属線の中間部分をボンディングする第３の工程とを有し、三つ以上の電極を一つの金属線によって接続する。
【００２２】
本発明の更に他の金属線のボンディング方法においては、さらに、前記第３の工程において、前記金属線が前記中間に配設された電極を視界的に遮断しないようにワーク固定装置又は顕微鏡を回転させてボンディングする。
【００２３】
本発明の更に他の金属線のボンディング方法においては、先端部分に金属線の供給口を備え、該供給口から金属線を供給する第１のボンディングツールを使用し、二つの電極間の距離に相当する長さの金属線を前記第１のボンディングツールの先端部分から飛び出させる第１の工程と、前記第１のボンディングツールを使用し、一方の電極に前記第１のボンディングツールの先端部分に対応する部分の金属線をボンディングする第２の工程と、前記第１のボンディングツールを使用し、前記金属線を切断する第３の工程と、先端部分に金属線の供給口を備えておらず、前記先端部分が平坦であり、該先端部分の面積が５０〔μｍ〕角より微小な第２のボンディングツールを使用し、前記先端部分で他方の電極に前記金属線の自由端を押し当ててボンディングする第４の工程とを有し、二つの電極を一つの金属線によって接続する。
【００２５】
本発明の更に他の金属線のボンディング方法においては、さらに、前記第４の工程において、前記金属線が前記他方の電極を視界的に遮断しないようにワーク固定装置又は顕微鏡を回転させてボンディングする。
【００２６】
【発明の実施の形態】
以下、本発明の実施の形態について図面を参照しながら詳細に説明する。
【００２７】
なお、本実施の形態においては、ボンディングする電極が三つ又はそれ以上ある場合に適するボンディング方法について説明する。
【００２８】
そして、本実施の形態におけるボンディング方法は、第１の電極、第２の電極、第３の電極、…、第ｎの電極を金属線で接続する場合、まず、ウェッジボンディング方法によって金属線を第１の電極パッドにボンディングし、続いて金属線を第ｎの電極パッドにボンディングした後、前記金属線を切断することによって、前記第１及び第ｎの電極を金属線で接続する第１の工程と、次に、第２〜第（ｎ−１）の電極のうちの一つ又は複数の電極に、それぞれの電極の上方から金属線をそれぞれの電極パッドに押し当ててボンディングする第２の工程（以下「押当てボンディング」という。）とを有する。
【００２９】
図１は本発明の第１の実施の形態における金属線のボンディング方法の動作を示す第１の図、図２は本発明の第１の実施の形態における金属線のボンディング方法の動作を示す第２の図、図３は本発明の第１の実施の形態における金属線のボンディング方法の動作を示す第３の図、図４は本発明の第１の実施の形態における金属線のボンディング方法の動作を示す第４の図、図５は本発明の第１の実施の形態における金属線のボンディング方法の動作を示す第５の図、図６は本発明の第１の実施の形態における様々な電極の配置形態を示す図である。
【００３０】
ここで、第１の電極１１及び第３の電極１３は高周波のマイクロストリップラインの信号線自体であり、第２の電極１２は、例えば、電界吸収型光変調器のチップ表面に形成された電極パッドである。そして、第２の電極１２は微小面積であり、その面積は約２５００平方ミクロン（例えば、本実施の形態においては、５０ミクロン角とする。）である。なお、第１の電極１１は、電極の面積が１００００平方ミクロン以上（例えば、１００ミクロン角）である。
【００３１】
まず、第１のボンディングツール（コレット）１４を使用して第１のボンディングを行い、第３の電極１３に金属線１５の先端をボンディングする。ここで、前記第１のボンディングツール１４は概略楔形、すなわち、ウェッジ形状をしており、図１における右下端部を金属線１５の先端部分の上に位置させて垂直に降ろし、該金属線１５の先端部分を上から電極に押しつけてボンディングさせる。なお、前記第１のボンディングツール１４は超音波振動をボンディング部分に伝達するようにしてもよい。また、前記金属線１４は、通常、金、銅、アルミニウム等より成るが、いかなる材質であってもよい。
【００３２】
次に、図１に示されるように、金属線１５をクランプしない状態で第１のボンディングツール１４を図における左方へ移動させて、金属線１５を第２の電極１２の真上を通過させて第３の電極１３に向けて（矢印ａ方向に）這わしていく。ここで、前記第２の電極１２の位置は、第１の電極１１及び第３の電極１３よりも低い位置にある。
【００３３】
続いて、第２のボンディングを行い、第１の電極１１上に金属線１５をボンディングする。続いて、図２に示されるように、金属線１５をクランプした状態で第１のボンディングツール１４を上方（矢印ｂ方向）に引き上げて金属線１５を切断する。
【００３４】
次に、外径が小さく、かつ先端に行くほど先細りとなる形状を有する第２のボンディングツール（コレット）１６を垂直に降ろし、図３に示されるように、第２の電極１２の真上を這っている金属線１５を前記第２のボンディングツール１６の先端で矢印ｃ方向に押さえるようにしながら、図４に示されるように、前記金属線１５を第２の電極１２の電極パッドに押し付けてボンディングする。ここで、前記第２のボンディングツール１５は超音波振動をボンディング部分に伝達するようにしてもよい。このようにして、押当てボンディングが行われる。
【００３５】
最後に、図５に示されるように、矢印ｄ方向に第２のボンディングツール１６を持ち上げる。
【００３６】
この場合、前述したような押当てボンディングにおいては、部材に引張応力が加わらないことを容易に理解することができる。すなわち、第２の電極１２のパッドには図における横方向に引張応力が加わることがない。同様に、第２の電極１２上に押し当てた金属線１５にも図における左右方向に引張応力が加わらないので、金属線１５の破断強度が低下するのを抑制することができる。
【００３７】
また、本実施の形態においては、微小面積の第２の電極１２を５０ミクロン角としているので、第２のボンディングツール１６の先端の押し当てる部分を同様の寸法の微小な面積のものとすることによって、強固なボンディング強度を得ることができる。
【００３８】
なお、本実施の形態の金属線のボンディング方法は、図１〜５に示された電極の配置形態以外にも、図６に示されるように、マイクロストリップライン、コプレーナライン、その他チップ抵抗等の様々な組合せの電極配置形態のものに適用することができる。また、第２の電極１２を有する素子が、複数の電極を有する集積化素子（例えば、電界吸収型光変調器と半導体レーザとの集積化素子）との組合せであっても、本実施の形態の金属線のボンディング方法を適用することができる。
【００３９】
このように、本実施の形態においては、第２の電極１２上に金属線１５をボンディングする場合に、部材に引張応力が加わらないので、ボンディング部分の金属線１５の破断強度が低下することがない。したがって、金属線１５のボンディング強度の長期的な信頼性を確保することができる。
【００４０】
また、低い位置にある第２の電極１２上に金属線１５をボンディングする押当てボンディングを行うボンディングツールとして、ウェッジボンディング用の第１のボンディングツール１４ではなく、外径が小さくかつ先端に行くほど先細りとなる形状を有する第２のボンディングツール１６を使用する。したがって、低い位置にある第２の電極１２上に金属線１５をボンディングする時に、ボンディングツールが、第２の電極１２よりも高い位置にある第１の電極１１や第３の電極１３の下地構造等にぶつかってしまうことがなく、ボンディングツールや下地構造等を破損してしまうことがない。
【００４１】
次に、本発明の第２の実施の形態について説明する。なお、前記第１の実施の形態と同じ構造を有するものについては、同一の符号を付すことによって、その説明を省略する。
【００４２】
また、前記第１の実施の形態においては、ボンディングする電極が三つ又はそれ以上ある場合に適するボンディング方法について説明したが、本実施の形態においては、ボンディングする電極が二つの場合に適するボンディング方法について説明する。
【００４３】
そして、本実施の形態におけるボンディング方法は、二つの電極（第１の電極及び第２の電極）を金属線によって接続する場合、第１の電極と第２の電極とのの間の距離に相当する分の長さの金属線をボンディングツールの先端から飛び出させる第１の工程と、第１の電極にボンディングツールの先端で金属線をボンディングする第２の工程と、金属線を切断する第３の工程と、同一の又は別のボンディングツールを使用して宙に浮いた金属線の先端を第２の電極に押し当ててボンディングする第４の工程とを有する。
【００４４】
図７は本発明の第２の実施の形態における金属線のボンディング方法の動作を示す第１の図、図８は本発明の第２の実施の形態における金属線のボンディング方法の動作を示す第２の図、図９は本発明の第２の実施の形態における金属線のボンディング方法の動作を示す第３の図、図１０は本発明の第２の実施の形態における金属線のボンディング方法の動作を示す第４の図、図１１は本発明の第２の実施の形態における金属線のボンディング方法の動作を示す第５の図、図１２は本発明の第２の実施の形態における金属線のボンディング方法の動作を示す第６の図、図１３は本発明の第２の実施の形態における様々な電極の配置形態を示す図である。
【００４５】
まず、図７に示されるように、第１のボンディングツール１４から矢印ｅ方向に金属線１５を所望の長さ分だけフィードする。この所望の長さとは、第１の電極１１のボンディングすべき箇所と第２の電極１２のボンディングすべき箇所との距離に相当する。
【００４６】
次に、図８に示されるように、第１の電極１１に第１ボンディングを行い、第１の電極１１上に金属線１５をボンディングする。続いて、図９に示されるように、金属線１５をクランプした状態で第１のボンディングツール１４を上方（矢印ｆ方向）に引き上げて金属線１５を切断する。
【００４７】
次に、第２のボンディングツール１６を垂直に降ろし、図１０に示されるように、第２の電極１２の真上を這っている金属線１５の先端部分を前記第２のボンディングツール１６の先端で矢印ｇ方向に押さえるようにしながら、図１１に示されるように、前記金属線１５を第２の電極１２の電極パッドに押し付けてボンディングする。このようにして、押当てボンディングが行われる。
【００４８】
最後に、図１２に示されるように、矢印ｈ方向に第２のボンディングツール１６を持ち上げる。
【００４９】
この場合、前述されたような押当てボンディングにおいては、部材に引張応力が加わらないことを容易に理解することができる。すなわち、第２の電極１２のパッドには図における横方向に引張応力が加わることがない。同様に、第２の電極１２上に押し当てた金属線１５にも図における左右方向に引張応力が加わらないので、金属線１５の破断強度が低下するのを抑制することができる。
【００５０】
また、本実施の形態においては、第２のボンディングツール１６の先端の押し当てる部分を第２の電極１２と同様の寸法の微小な面積のものとすることによって、強固なボンディング強度を得ることができる。
【００５１】
なお、本実施の形態の金属線のボンディング方法は、図７〜１２に示された電極の配置形態以外にも、図１３に示されるように、マイクロストリップライン、コプレーナライン、その他チップ抵抗等の様々な組合せの電極配置形態のものに適用することができる。また、第２の電極１２を有する素子が、複数の電極を有する集積化素子（例えば、電界吸収型光変調器と半導体レーザとの集積化素子）との組合せであっても、本実施の形態の金属線のボンディング方法を適用することができる。また、これらの電極の中で最も小さい電極面積であるのが第２の電極１２である。
【００５２】
このように、本実施の形態においては、第２の電極１２上に金属線１５をボンディングする場合に、部材に引張応力が加わらないので、ボンディング部分の金属線１５の破断強度が低下することがない。したがって、金属線１５のボンディング強度の長期的な信頼性を確保することができる。
【００５３】
また、低い位置にある第２の電極１２上に金属線１５をボンディングする押当てボンディングを行うボンディングツールとして、ウェッジボンディング用の第１のボンディングツール１４ではなく、外径が小さくかつ先端に行くほど先細りとなる形状を有する第２のボンディングツール１６を使用する。したがって、低い位置にある第２の電極１２上に金属線１５をボンディングする時に、ボンディングツールが、第２の電極１２よりも高い位置にある第１の電極１１の下地構造等にぶつかってしまうことがなく、ボンディングツールや下地構造等を破損してしまうことがない。
【００５４】
次に、本発明の第３の実施の形態について説明する。
【００５５】
なお、本実施の形態においては、前記第１実施の形態におけるボンディング方法に基づいて説明する。
【００５６】
この場合、押当てボンディングの際に別のボンディングツールを使用するとともに、押当てボンディングの際に金属線が第２の電極を視界的に遮断することがないようにワーク固定装置としてのワークホルダーを回転させることによって、第２の電極１２の位置を確認してからボンディングするようになっている。
【００５７】
前述されたように、ウェッジ形状の第１のボンディングツール１４を使用する場合、奥行方向、すなわち、図１等における左右方向にだけしか金属線１５を這わすことができないので、微小面積の第２の電極１２の電極パッドが金属線１５自体で視覚的に遮断されてしまう。そのため、金属線１５を第２の電極１２の電極パッドに押し付ける状態を顕微鏡等を用いて確認することができないので、押当てボンディングの際にボンディング位置の再現性が低下してしまう。
【００５８】
そこで、前記第１の実施の形態を例に説明すると、第１の電極１１と第３の電極１３との間の金属線１５のボンディングと、第２の電極１２のボンディングとを別個の操作として実施する。そして、実際に微小電極である第２の電極１２のボンディングを行う場合には、図３に示されるように、金属線１５を第２のボンディングツール１６の先端で矢印ｃ方向に押さえるようにしながら、図４に示されるように、前記金属線１５を第２の電極１２のパッドに押し付けて押当てボンディングする。
【００５９】
その際、顕微鏡等を用いて観察している視野内において、金属線１５と第２の電極１２とが重ならないように、第１の電極１１から第３の電極１３への金属線１５の這っている方向に対して垂直な方向から観察する必要がある。すなわち、図１等における紙面に垂直な方向から観察する必要がある。
【００６０】
ところで、図１及び２に示されるような第１のボンディング及び第２のボンディングにおいては、通常、図における右手方向からボンディング箇所を観察する。したがって、同一の顕微鏡を使用して金属線１５を第２の電極１２のパッドに押し付ける押当てボンディングを観察する場合には、その顕微鏡又はワークを保持しているワーク固定装置としてのワークホルダーを９０度回転させる。
【００６１】
このように、本実施の形態においては、金属線１５を微小面積の第２の電極１２の電極パッドに押し付ける押当てボンディングを観察する場合には、顕微鏡又はワークを保持しているワークホルダーを９０度回転させる。これにより、第１の電極１１から第３の電極１３への金属線１５の這っている方向に対して垂直な方向から観察することができ、金属線１５と第２の電極１２とが重ならず、微小面積の第２の電極１２の電極パッドが金属線１５自体で視覚的に遮断されてしまうことがないので、押当てボンディングの際にボンディングの位置の再現性が低下してしまうことがない。
【００６２】
したがって、高密度の金属線１５の実装を安定的に実施することができる。
【００６３】
なお、本発明は前記実施の形態に限定されるものではなく、本発明の趣旨に基づいて種々変形させることが可能であり、それらを本発明の範囲から排除するものではない。
【００６４】
【発明の効果】
以上詳細に説明したように、本発明によれば、金属線のボンディング方法においては、先端部分に金属線の供給口を備え、該供給口から金属線を供給する第１のボンディングツールを使用し、ウェッジボンディング方法によって、両端に配設された電極に前記金属線をボンディングする第１の工程と、前記第１のボンディングツールを使用し、前記金属線を切断する第２の工程と、先端部分に金属線の供給口を備えておらず、前記先端部分が平坦であり、該先端部分の面積が５０〔μｍ〕角より微小な第２のボンディングツールを使用し、前記先端部分を金属線に押し当てる押当てボンディング方法によって、中間に配設された電極に前記金属線の中間部分をボンディングする第３の工程とを有し、三つ以上の電極を一つの金属線によって接続する。
【００６５】
この場合、中間に配設された電極に金属線をボンディングする場合に、部材に引張応力が加わらないので、ボンディング部分の金属線の破断強度が低下することがない。したがって、金属線のボンディング強度の長期的な信頼性を確保することができる。
【００６７】
この場合、奥行方向の電極の高さが手前の電極の高さよりも高い場合でも、ボンディング時にボンディングツールの先端のワイヤガイドが後ろ側の電極の下地構造にぶつかってしまうことがない。
【００６８】
本発明の更に他の金属線のボンディング方法においては、さらに、前記第３の工程において、前記金属線が前記中間に配設された電極を視界的に遮断しないようにワーク固定装置又は顕微鏡を回転させてボンディングする。
【００６９】
この場合、前記金属線と中間に配設された電極とが重ならず、微小面積の前記中間に配設された電極が金属線自体で視覚的に遮断されてしまうことがないので、押当てボンディングの際にボンディングの位置の再現性が低下してしまうことがない。
【００７０】
本発明の更に他の金属線のボンディング方法においては、先端部分に金属線の供給口を備え、該供給口から金属線を供給する第１のボンディングツールを使用し、二つの電極間の距離に相当する長さの金属線を前記第１のボンディングツールの先端部分から飛び出させる第１の工程と、前記第１のボンディングツールを使用し、一方の電極に前記第１のボンディングツールの先端部分に対応する部分の金属線をボンディングする第２の工程と、前記第１のボンディングツールを使用し、前記金属線を切断する第３の工程と、先端部分に金属線の供給口を備えておらず、前記先端部分が平坦であり、該先端部分の面積が５０〔μｍ〕角より微小な第２のボンディングツールを使用し、前記先端部分で他方の電極に前記金属線の自由端を押し当ててボンディングする第４の工程とを有し、二つの電極を一つの金属線によって接続する。
【００７１】
この場合、他方の電極に金属線をボンディングする場合に、部材に引張応力が加わらないので、ボンディング部分の金属線の破断強度が低下することがない。したがって、金属線のボンディング強度の長期的な信頼性を確保することができる。
【００７３】
この場合、奥行方向の電極の高さが手前の電極の高さよりも高い場合でも、ボンディング時にボンディングツールの先端のワイヤガイドが後ろ側の電極の下地構造にぶつかってしまうことがない。
【００７４】
本発明の更に他の金属線のボンディング方法においては、さらに、前記第４の工程において、前記金属線が前記他方の電極を視界的に遮断しないようにワーク固定装置又は顕微鏡を回転させてボンディングする。
【００７５】
この場合、前記金属線と他方の電極とが重ならず、微小面積の前記他方の電極が金属線自体で視覚的に遮断されてしまうことがないので、押当てボンディングの際にボンディングの位置の再現性が低下してしまうことがない。
【図面の簡単な説明】
【図１】本発明の第１の実施の形態における金属線のボンディング方法の動作を示す第１の図である。
【図２】本発明の第１の実施の形態における金属線のボンディング方法の動作を示す第２の図である。
【図３】本発明の第１の実施の形態における金属線のボンディング方法の動作を示す第３の図である。
【図４】本発明の第１の実施の形態における金属線のボンディング方法の動作を示す第４の図である。
【図５】本発明の第１の実施の形態における金属線のボンディング方法の動作を示す第５の図である。
【図６】本発明の第１の実施の形態における様々な電極の配置形態を示す図である。
【図７】本発明の第２の実施の形態における金属線のボンディング方法の動作を示す第１の図である。
【図８】本発明の第２の実施の形態における金属線のボンディング方法の動作を示す第２の図である。
【図９】本発明の第２の実施の形態における金属線のボンディング方法の動作を示す第３の図である。
【図１０】本発明の第２の実施の形態における金属線のボンディング方法の動作を示す第４の図である。
【図１１】本発明の第２の実施の形態における金属線のボンディング方法の動作を示す第５の図である。
【図１２】本発明の第２の実施の形態における金属線のボンディング方法の動作を示す第６の図である。
【図１３】本発明の第２の実施の形態における様々な電極の配置形態を示す図である。
【符号の説明】
１５ 金属線[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a metal wire bonding method.
[0002]
[Prior art]
Conventionally, in general, in devices that require high-speed operation, in particular, in order to reduce the electric capacity and wire inductance of the electrode wiring, the size of the electrode pad for bonding a metal wire is reduced, and the electrode pad It is necessary to shorten the length of the wiring pattern from the active area to the active area. As a result, the layout is such that the electrode pad is adjacent to the active region. In VLSI and the like, many electrode pads are arranged along the outer periphery of the chip. In order to reduce the size of the chip, it is necessary to reduce the size of the electrode pad itself. is there.
[0003]
However, in the conventional nail head type bonding method, the tip of the bonding tool for pressing the metal wire has a donut shape, and the outer diameter of the tip is 100 microns or more in consideration of the minimum workable dimension. End up. Therefore, the diameter of the tip portion of the metal wire shaped like a nail head is 100 microns or more.
[0004]
Here, when bonding a metal wire to the electrode pad (when bonding between two electrodes), first, the tip of the metal wire is formed into a nail head shape, that is, a shape like a nail head.
[0005]
Next, the bonding tool is lowered vertically, and the tip of the metal wire shaped like the head of the nail is pressed against the electrode pad of the first electrode to perform bonding (first bonding).
[0006]
Thereafter, the bonding tool is lifted vertically without clamping the metal wire, and the bonding tool is lowered toward the next electrode while drawing a semicircular arc.
[0007]
Subsequently, a metal wire is pressed against the electrode pad of the second electrode for bonding (second bonding).
[0008]
Finally, the metal wire is cut by lifting the bonding tool vertically with the metal wire clamped.
[0009]
In this case, since the diameter of the tip of the metal wire shaped like a nail head is 100 microns or more, the first bonding electrode is required to have a dimension of 100 microns square or more, and after the second bonding. Although the bonding area can be 100 microns or less, the size and shape of the tip portion of the bonding tool, that is, the tool head itself is not suitable for bonding to a microelectrode. Then, as described above, in the operation of lifting the bonding tool vertically without clamping the metal wire and drawing the bonding tool toward the next electrode while drawing the arc in a semicircle, draw a semicircle arc As a result, the length of the metal wire between the electrodes becomes long. Further, in the operation of cutting the metal wire after the completion of the second bonding, the metal wire is often cut with a few hundred microns remaining immediately above the bonding location.
[0010]
On the other hand, in the case of the wedge type bonding method in which the tip of the metal wire is crushed on the electrode pad, when bonding the metal wire to the electrode pad (when bonding between two electrodes), first, a bonding tool is used. The metal wire is lowered vertically and bonded by pressing the tip of the metal wire against the electrode pad of the first electrode (first bonding). Note that the tip of the metal wire does not have a nail head shape.
[0011]
Subsequently, the bonding tool is lifted slightly without clamping the metal wire, and is moved almost horizontally in the depth direction of the bonding tool toward the next electrode.
[0012]
Next, a metal wire is pressed and bonded to the electrode pad of the second electrode (second bonding).
[0013]
Finally, with the metal wire clamped, the bonding tool is lifted vertically to cut the metal wire.
[0014]
In the case of such a wedge-type bonding method, the metal wire can be wired in a substantially horizontal direction. Therefore, the length of the metal wire between the electrodes can be shortened as compared with the nail head type bonding method. In addition, the shape of the portion where the metal wire at the tip of the bonding tool is crushed can be matched with the shape of the electrode pad. Therefore, the area of the electrode pad can be reduced.
[0015]
For this reason, in the wedge-type bonding method, the wire inductance can be reduced, and the capacitance between the electrodes can be reduced. That is, in an LSI or the like, many electrodes can be laid out with high density, and when applied to an element that requires high-speed operation, high-frequency characteristics can be improved.
[0016]
[Problems to be solved by the invention]
However, in the conventional metal wire bonding method, in the case of the wedge-type bonding method, the metal wire in the crushed portion becomes thin and flat, and the periphery thereof is thinly bent. And when a metal wire is cut | disconnected after that, a tensile stress will be added to the location, and a fracture strength will fall by the heat | fever, physical vibration, etc. which generate | occur | produce by electricity supply.
[0017]
Further, when the height of the electrode in the depth direction is higher than the height of the front electrode, the wire guide at the tip of the bonding tool may hit the underlying structure of the rear electrode during bonding. In this case, bonding misalignment occurs or the strength of the bonding portion becomes unstable. Furthermore, there is a high possibility of causing damage to the bonding tool and the underlying structure of the back electrode. This phenomenon is especially true when the three electrodes are connected by a metal wire, the height of the middle electrode is lower than the height of the other two electrodes, and these electrodes are placed close to each other. It is likely to happen if it is.
[0018]
Furthermore, in the case of the wedge-type bonding method, the metal wire can only be moved in the depth direction, so the electrode pad with a small area is visually blocked by the metal wire itself, so that the bonding location and the bonding operation can be performed. It becomes impossible to monitor sufficiently. Therefore, the reproducibility of the bonding position is lowered.
[0019]
The present invention solves the problems of the conventional metal wire bonding method, and the breaking strength of the metal wire at the bonding portion does not decrease, and the tip portion of the bonding tool hits the underlying structure of the electrode. It is an object of the present invention to provide a metal wire bonding method capable of sufficiently monitoring bonding locations and bonding operations.
[0020]
[Means for Solving the Problems]
Therefore, in the metal wire bonding method of the present invention, a metal wire supply port is provided at the tip portion, and a first bonding tool for supplying the metal wire from the supply port is used. A first step of bonding the metal wire to the disposed electrode; a second step of cutting the metal wire using the first bonding tool; and a metal wire supply port at a tip portion. The tip is flat And the area of the tip is smaller than 50 [μm] square And a third step of bonding the intermediate portion of the metal wire to the electrode disposed in the middle by a pressing bonding method of pressing the tip portion against the metal wire using a second bonding tool. Three or more electrodes are connected by a single metal wire.
[0022]
In still another metal wire bonding method of the present invention, in the third step, the work fixing device or the microscope is rotated so that the metal wire does not visually block the electrode disposed in the middle. And bond.
[0023]
In still another metal wire bonding method of the present invention, a metal wire supply port is provided at a tip portion, and a first bonding tool for supplying a metal wire from the supply port is used, and the distance between two electrodes is set. A first step of projecting a metal wire having a corresponding length from the tip portion of the first bonding tool; and the first bonding tool is used, and one electrode is provided at the tip portion of the first bonding tool. The second step of bonding the corresponding part of the metal wire, the third step of cutting the metal wire using the first bonding tool, and the metal wire supply port is not provided at the tip portion. The tip is flat And the area of the tip is smaller than 50 [μm] square And a fourth step of pressing the free end of the metal wire against the other electrode at the tip portion and bonding, and connecting the two electrodes by one metal wire. .
[0025]
In still another metal wire bonding method of the present invention, in the fourth step, bonding is performed by rotating a work fixing device or a microscope so that the metal wire does not visually block the other electrode. .
[0026]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
[0027]
In this embodiment, a bonding method suitable for the case where there are three or more electrodes to be bonded will be described.
[0028]
In the bonding method according to the present embodiment, when the first electrode, the second electrode, the third electrode,..., The nth electrode are connected by a metal wire, the metal wire is first connected by the wedge bonding method. A first step of bonding the first and nth electrodes with a metal line by bonding to one electrode pad and subsequently bonding the metal line to the nth electrode pad and then cutting the metal line; Next, a second step of bonding one or more of the second to (n-1) electrodes by pressing a metal wire against each electrode pad from above each electrode. (Hereinafter referred to as “pressing bonding”).
[0029]
FIG. 1 is a first diagram illustrating the operation of a metal wire bonding method according to the first embodiment of the present invention, and FIG. 2 is a first diagram illustrating the operation of the metal wire bonding method according to the first embodiment of the present invention. FIG. 2 and FIG. 3 are third diagrams showing the operation of the metal wire bonding method according to the first embodiment of the present invention. FIG. 4 is a diagram of the metal wire bonding method according to the first embodiment of the present invention. FIG. 5 is a fourth diagram showing the operation, FIG. 5 is a fifth diagram showing the operation of the metal wire bonding method in the first embodiment of the present invention, and FIG. 6 is a diagram showing various operations in the first embodiment of the present invention. It is a figure which shows the arrangement | positioning form of an electrode.
[0030]
Here, the first electrode 11 and the third electrode 13 are high-frequency microstrip line signal lines themselves, and the second electrode 12 is, for example, an electrode formed on the chip surface of an electroabsorption optical modulator. It is a pad. The second electrode 12 has a very small area, and the area is about 2500 square microns (for example, in this embodiment, the square is 50 micron square). The first electrode 11 has an electrode area of 10,000 square microns or more (for example, 100 micron square).
[0031]
First, first bonding is performed using a first bonding tool (collet) 14, and the tip of the metal wire 15 is bonded to the third electrode 13. Here, the first bonding tool 14 has a substantially wedge shape, that is, a wedge shape. The lower right end portion in FIG. The tip of the wire is pressed against the electrode from above and bonded. The first bonding tool 14 may transmit ultrasonic vibration to the bonding portion. The metal wire 14 is usually made of gold, copper, aluminum or the like, but may be made of any material.
[0032]
Next, as shown in FIG. 1, the first bonding tool 14 is moved to the left in the figure without clamping the metal wire 15, and the metal wire 15 passes right above the second electrode 12. And turn toward the third electrode 13 (in the direction of arrow a). Here, the position of the second electrode 12 is lower than that of the first electrode 11 and the third electrode 13.
[0033]
Subsequently, second bonding is performed, and the metal wire 15 is bonded onto the first electrode 11. Subsequently, as shown in FIG. 2, the metal wire 15 is cut by pulling the first bonding tool 14 upward (in the direction of arrow b) while the metal wire 15 is clamped.
[0034]
Next, the second bonding tool (collet) 16 having a small outer diameter and a shape that tapers toward the tip is lowered vertically, and as shown in FIG. The metal wire 15 is pressed against the electrode pad of the second electrode 12 as shown in FIG. 4 while pressing the metal wire 15 that is creeping in the direction of the arrow c at the tip of the second bonding tool 16. Bond. Here, the second bonding tool 15 may transmit ultrasonic vibration to the bonding portion. In this way, pressing bonding is performed.
[0035]
Finally, as shown in FIG. 5, the second bonding tool 16 is lifted in the direction of the arrow d.
[0036]
In this case, it can be easily understood that tensile stress is not applied to the member in the above-described pressing bonding. That is, the tensile stress is not applied to the pad of the second electrode 12 in the lateral direction in the figure. Similarly, since tensile stress is not applied to the metal wire 15 pressed on the second electrode 12 in the left-right direction in the drawing, it is possible to suppress the breaking strength of the metal wire 15 from being lowered.
[0037]
In the present embodiment, since the second electrode 12 having a small area has a 50 micron square, the portion to be pressed against the tip of the second bonding tool 16 has a small area with the same size. Thus, a strong bonding strength can be obtained.
[0038]
Note that the metal wire bonding method of the present embodiment is not limited to the electrode arrangement shown in FIGS. 1 to 5, as shown in FIG. 6, such as a microstrip line, a coplanar line, and other chip resistors. Various combinations of electrode arrangements can be applied. Even if the element having the second electrode 12 is a combination of an integrated element having a plurality of electrodes (for example, an integrated element of an electroabsorption optical modulator and a semiconductor laser), the present embodiment The metal wire bonding method can be applied.
[0039]
As described above, in the present embodiment, when the metal wire 15 is bonded onto the second electrode 12, no tensile stress is applied to the member, so that the breaking strength of the metal wire 15 at the bonding portion may be reduced. Absent. Therefore, long-term reliability of the bonding strength of the metal wire 15 can be ensured.
[0040]
Further, as a bonding tool for performing pressing bonding for bonding the metal wire 15 on the second electrode 12 at a low position, the outer diameter is smaller and the tip is closer to the tip instead of the first bonding tool 14 for wedge bonding. A second bonding tool 16 having a tapered shape is used. Therefore, when the metal wire 15 is bonded onto the second electrode 12 located at a lower position, the bonding tool uses the underlying structure of the first electrode 11 and the third electrode 13 located higher than the second electrode 12. The bonding tool, the base structure, etc. are not damaged.
[0041]
Next, a second embodiment of the present invention will be described. In addition, about the thing which has the same structure as the said 1st Embodiment, the description is abbreviate | omitted by attaching | subjecting the same code | symbol.
[0042]
In the first embodiment, the bonding method suitable for the case where there are three or more electrodes to be bonded has been described. However, in the present embodiment, the bonding method suitable for the case where two electrodes are bonded. explain.
[0043]
The bonding method in the present embodiment corresponds to the distance between the first electrode and the second electrode when the two electrodes (first electrode and second electrode) are connected by a metal wire. A first step of jumping out a metal wire having a length corresponding to the length of the bonding tool, a second step of bonding the metal wire to the first electrode at the tip of the bonding tool, and a third step of cutting the metal wire And a fourth step of bonding the tip of a metal wire suspended in the air against the second electrode using the same or another bonding tool.
[0044]
FIG. 7 is a first diagram illustrating the operation of the metal wire bonding method according to the second embodiment of the present invention, and FIG. 8 is a first diagram illustrating the operation of the metal wire bonding method according to the second embodiment of the present invention. FIG. 2 and FIG. 9 are third diagrams showing the operation of the metal wire bonding method according to the second embodiment of the present invention, and FIG. 10 is the metal wire bonding method according to the second embodiment of the present invention. FIG. 11 is a fourth diagram showing the operation, FIG. 11 is a fifth diagram showing the operation of the metal wire bonding method in the second embodiment of the present invention, and FIG. 12 is a metal wire in the second embodiment of the present invention. FIG. 6 is a diagram showing the operation of this bonding method, and FIG. 13 is a diagram showing the arrangement of various electrodes in the second embodiment of the present invention.
[0045]
First, as shown in FIG. 7, the metal wire 15 is fed by a desired length from the first bonding tool 14 in the direction of arrow e. This desired length corresponds to the distance between the location where the first electrode 11 is to be bonded and the location where the second electrode 12 is to be bonded.
[0046]
Next, as shown in FIG. 8, the first bonding is performed on the first electrode 11, and the metal wire 15 is bonded on the first electrode 11. Subsequently, as shown in FIG. 9, the metal wire 15 is cut by pulling the first bonding tool 14 upward (in the direction of arrow f) while the metal wire 15 is clamped.
[0047]
Next, the second bonding tool 16 is lowered vertically, and as shown in FIG. 10, the tip portion of the metal wire 15 that is directly over the second electrode 12 is moved to the tip of the second bonding tool 16. The metal wire 15 is pressed against the electrode pad of the second electrode 12 and bonded as shown in FIG. In this way, pressing bonding is performed.
[0048]
Finally, as shown in FIG. 12, the second bonding tool 16 is lifted in the direction of arrow h.
[0049]
In this case, in the pressing bonding as described above, it can be easily understood that no tensile stress is applied to the member. That is, the tensile stress is not applied to the pad of the second electrode 12 in the lateral direction in the figure. Similarly, since tensile stress is not applied to the metal wire 15 pressed on the second electrode 12 in the left-right direction in the drawing, it is possible to suppress the breaking strength of the metal wire 15 from being lowered.
[0050]
Further, in the present embodiment, a strong bonding strength can be obtained by making the portion to be pressed against the tip of the second bonding tool 16 have a small area similar to the size of the second electrode 12. it can.
[0051]
Note that the metal wire bonding method of the present embodiment is not limited to the electrode arrangement shown in FIGS. 7 to 12, as shown in FIG. 13, such as a microstrip line, a coplanar line, and other chip resistors. Various combinations of electrode arrangements can be applied. Even if the element having the second electrode 12 is a combination of an integrated element having a plurality of electrodes (for example, an integrated element of an electroabsorption optical modulator and a semiconductor laser), the present embodiment The metal wire bonding method can be applied. Also, the second electrode 12 has the smallest electrode area among these electrodes.
[0052]
As described above, in the present embodiment, when the metal wire 15 is bonded onto the second electrode 12, no tensile stress is applied to the member, so that the breaking strength of the metal wire 15 at the bonding portion may be reduced. Absent. Therefore, long-term reliability of the bonding strength of the metal wire 15 can be ensured.
[0053]
Further, as a bonding tool for performing pressing bonding for bonding the metal wire 15 on the second electrode 12 at a low position, the outer diameter is smaller and the tip is closer to the tip instead of the first bonding tool 14 for wedge bonding. A second bonding tool 16 having a tapered shape is used. Therefore, when the metal wire 15 is bonded onto the second electrode 12 located at a lower position, the bonding tool hits the underlying structure of the first electrode 11 located higher than the second electrode 12. There will be no damage to the bonding tool or the underlying structure.
[0054]
Next, a third embodiment of the present invention will be described.
[0055]
In the present embodiment, description will be made based on the bonding method in the first embodiment.
[0056]
In this case, a separate bonding tool is used for pressing bonding, and a work holder as a work fixing device is used so that the metal wire does not block the second electrode visually during pressing bonding. By rotating, the position of the second electrode 12 is confirmed before bonding.
[0057]
As described above, when the wedge-shaped first bonding tool 14 is used, the metal wire 15 can be wound only in the depth direction, that is, the left-right direction in FIG. The electrode pad of the electrode 12 is visually blocked by the metal wire 15 itself. For this reason, since the state of pressing the metal wire 15 against the electrode pad of the second electrode 12 cannot be confirmed using a microscope or the like, the reproducibility of the bonding position is deteriorated during pressing bonding.
[0058]
Therefore, the first embodiment will be described as an example. Bonding of the metal wire 15 between the first electrode 11 and the third electrode 13 and bonding of the second electrode 12 are performed as separate operations. carry out. Then, when actually bonding the second electrode 12 which is a microelectrode, as shown in FIG. 3, the metal wire 15 is pressed in the direction of the arrow c at the tip of the second bonding tool 16. As shown in FIG. 4, the metal wire 15 is pressed against the pad of the second electrode 12 to perform press bonding.
[0059]
At this time, the metal wire 15 is bent from the first electrode 11 to the third electrode 13 so that the metal wire 15 and the second electrode 12 do not overlap in the visual field observed using a microscope or the like. It is necessary to observe from a direction perpendicular to the direction in which it is present. That is, it is necessary to observe from a direction perpendicular to the paper surface in FIG.
[0060]
By the way, in the first bonding and the second bonding as shown in FIGS. 1 and 2, the bonding portion is usually observed from the right-hand direction in the drawing. Therefore, when observing the pressing bonding in which the metal wire 15 is pressed against the pad of the second electrode 12 using the same microscope, the work holder 90 as a work fixing device holding the microscope or the work is used. Rotate degrees.
[0061]
As described above, in the present embodiment, when observing the pressing bonding in which the metal wire 15 is pressed against the electrode pad of the second electrode 12 having a small area, the work holder holding the microscope or the work is moved to 90. Rotate degrees. As a result, it is possible to observe from a direction perpendicular to the direction in which the metal line 15 is struck from the first electrode 11 to the third electrode 13, and if the metal line 15 and the second electrode 12 overlap each other. In addition, since the electrode pad of the second electrode 12 having a small area is not visually blocked by the metal wire 15 itself, the reproducibility of the bonding position may be reduced during the pressing bonding. Absent.
[0062]
Therefore, the high-density metal wire 15 can be stably mounted.
[0063]
In addition, this invention is not limited to the said embodiment, It can change variously based on the meaning of this invention, and does not exclude them from the scope of the present invention.
[0064]
【The invention's effect】
As described above in detail, according to the present invention, in the metal wire bonding method, the metal wire supply port is provided at the tip portion, and the first bonding tool for supplying the metal wire from the supply port is used. A first step of bonding the metal wire to the electrodes disposed at both ends by a wedge bonding method; a second step of cutting the metal wire using the first bonding tool; and a tip portion Does not have a metal wire supply port, and the tip is flat And the area of the tip is smaller than 50 [μm] square And a third step of bonding the intermediate portion of the metal wire to the electrode disposed in the middle by a pressing bonding method of pressing the tip portion against the metal wire using a second bonding tool. Three or more electrodes are connected by a single metal wire.
[0065]
In this case, when the metal wire is bonded to the electrode disposed in the middle, no tensile stress is applied to the member, so that the breaking strength of the metal wire at the bonding portion does not decrease. Therefore, long-term reliability of the bonding strength of the metal wire can be ensured.
[0067]
In this case, even when the height of the electrode in the depth direction is higher than the height of the front electrode, the wire guide at the tip of the bonding tool does not hit the underlying structure of the rear electrode during bonding.
[0068]
In still another metal wire bonding method of the present invention, in the third step, the work fixing device or the microscope is rotated so that the metal wire does not visually block the electrode disposed in the middle. And bond.
[0069]
In this case, the metal wire and the electrode disposed in the middle do not overlap, and the electrode disposed in the middle of a small area is not visually blocked by the metal wire itself. The reproducibility of the bonding position does not deteriorate during bonding.
[0070]
In still another metal wire bonding method of the present invention, a metal wire supply port is provided at a tip portion, and a first bonding tool for supplying a metal wire from the supply port is used, and the distance between two electrodes is set. A first step of projecting a metal wire having a corresponding length from the tip portion of the first bonding tool; and the first bonding tool is used, and one electrode is provided at the tip portion of the first bonding tool. The second step of bonding the corresponding part of the metal wire, the third step of cutting the metal wire using the first bonding tool, and the metal wire supply port is not provided at the tip portion. The tip is flat And the area of the tip is smaller than 50 [μm] square And a fourth step of pressing the free end of the metal wire against the other electrode at the tip portion and bonding, and connecting the two electrodes by one metal wire. .
[0071]
In this case, when a metal wire is bonded to the other electrode, no tensile stress is applied to the member, so that the breaking strength of the metal wire at the bonding portion does not decrease. Therefore, long-term reliability of the bonding strength of the metal wire can be ensured.
[0073]
In this case, even when the height of the electrode in the depth direction is higher than the height of the front electrode, the wire guide at the tip of the bonding tool does not hit the underlying structure of the rear electrode during bonding.
[0074]
In still another metal wire bonding method of the present invention, in the fourth step, bonding is performed by rotating a work fixing device or a microscope so that the metal wire does not visually block the other electrode. .
[0075]
In this case, the metal wire and the other electrode do not overlap each other, and the other electrode having a small area is not visually blocked by the metal wire itself. The reproducibility is not reduced.
[Brief description of the drawings]
FIG. 1 is a first diagram illustrating an operation of a metal wire bonding method according to a first embodiment of the present invention.
FIG. 2 is a second diagram showing the operation of the metal wire bonding method according to the first embodiment of the present invention.
FIG. 3 is a third diagram showing the operation of the metal wire bonding method according to the first embodiment of the present invention.
FIG. 4 is a fourth diagram showing the operation of the metal wire bonding method according to the first embodiment of the present invention.
FIG. 5 is a fifth diagram showing the operation of the metal wire bonding method according to the first embodiment of the present invention.
FIG. 6 is a diagram showing various electrode arrangements according to the first embodiment of the present invention.
FIG. 7 is a first diagram illustrating an operation of a metal wire bonding method according to a second embodiment of the present invention.
FIG. 8 is a second diagram showing the operation of the metal wire bonding method according to the second embodiment of the present invention.
FIG. 9 is a third diagram illustrating the operation of the metal wire bonding method according to the second embodiment of the present invention.
FIG. 10 is a fourth diagram showing the operation of the metal wire bonding method according to the second embodiment of the present invention.
FIG. 11 is a fifth diagram illustrating the operation of the metal wire bonding method according to the second embodiment of the invention.
FIG. 12 is a sixth diagram illustrating the operation of the metal wire bonding method according to the second embodiment of the invention.
FIG. 13 is a diagram showing various electrode arrangements according to the second embodiment of the present invention.
[Explanation of symbols]
15 Metal wire

Claims (4)

（ａ）先端部分に金属線の供給口を備え、該供給口から金属線を供給する第１のボンディングツールを使用し、ウェッジボンディング方法によって、両端に配設された電極に前記金属線をボンディングする第１の工程と、
（ｂ）前記第１のボンディングツールを使用し、前記金属線を切断する第２の工程と、
（ｃ）先端部分に金属線の供給口を備えておらず、前記先端部分が平坦であり、該先端部分の面積が５０〔μｍ〕角より微小な第２のボンディングツールを使用し、前記先端部分を金属線に押し当てる押当てボンディング方法によって、中間に配設された電極に前記金属線の中間部分をボンディングする第３の工程とを有し、三つ以上の電極を一つの金属線によって接続することを特徴とする金属線のボンディング方法。(A) A metal wire supply port is provided at the tip, and a first bonding tool for supplying the metal wire from the supply port is used, and the metal wire is bonded to electrodes disposed at both ends by a wedge bonding method. A first step of:
(B) a second step of cutting the metal wire using the first bonding tool;
(C) using a second bonding tool that does not have a metal wire supply port at the tip portion, the tip portion is flat , and has an area of the tip portion smaller than 50 [μm] square; A third step of bonding an intermediate portion of the metal wire to an electrode disposed in the middle by a pressing bonding method in which the portion is pressed against the metal wire, and three or more electrodes are bonded by one metal wire. A metal wire bonding method characterized by connecting. 前記第３の工程において、前記金属線が前記中間に配設された電極を視界的に遮断しないようにワーク固定装置又は顕微鏡を回転させてボンディングする請求項１に記載の金属線のボンディング方法。The metal wire bonding method according to claim 1, wherein in the third step, bonding is performed by rotating a work fixing device or a microscope so that the metal wire does not visually cut off the electrode disposed in the middle. （ａ）先端部分に金属線の供給口を備え、該供給口から金属線を供給する第１のボンディングツールを使用し、二つの電極間の距離に相当する長さの金属線を前記第１のボンディングツールの先端部分から飛び出させる第１の工程と、
（ｂ）前記第１のボンディングツールを使用し、一方の電極に前記第１のボンディングツールの先端部分に対応する部分の金属線をボンディングする第２の工程と、
（ｃ）前記第１のボンディングツールを使用し、前記金属線を切断する第３の工程と、
（ｄ）先端部分に金属線の供給口を備えておらず、前記先端部分が平坦であり、該先端部分の面積が５０〔μｍ〕角より微小な第２のボンディングツールを使用し、前記先端部分で他方の電極に前記金属線の自由端を押し当ててボンディングする第４の工程とを有し、二つの電極を一つの金属線によって接続することを特徴とする金属線のボンディング方法。(A) A metal wire supply port is provided at the tip, and a first bonding tool for supplying a metal wire from the supply port is used, and a metal wire having a length corresponding to the distance between two electrodes is used for the first wire. A first step of jumping out from the tip of the bonding tool of
(B) a second step of using the first bonding tool to bond a portion of the metal wire corresponding to the tip portion of the first bonding tool to one of the electrodes;
(C) a third step of cutting the metal wire using the first bonding tool;
(D) using a second bonding tool that does not have a metal wire supply port at the tip portion, the tip portion is flat , and has an area of the tip portion smaller than 50 [μm] square; And a fourth step of pressing the free end of the metal wire against the other electrode and bonding the two electrodes, and connecting the two electrodes with one metal wire. 前記第４の工程において、前記金属線が前記他方の電極を視界的に遮断しないようにワーク固定装置又は顕微鏡を回転させてボンディングする請求項３に記載の金属線のボンディング方法。The metal wire bonding method according to claim 3, wherein in the fourth step, bonding is performed by rotating a work fixing device or a microscope so that the metal wire does not visually block the other electrode.
JP2001001213A 2001-01-09 2001-01-09 Metal wire bonding method Expired - Fee Related JP4674970B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001001213A JP4674970B2 (en) 2001-01-09 2001-01-09 Metal wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001001213A JP4674970B2 (en) 2001-01-09 2001-01-09 Metal wire bonding method

Publications (2)

Publication Number Publication Date
JP2002208609A JP2002208609A (en) 2002-07-26
JP4674970B2 true JP4674970B2 (en) 2011-04-20

Family

ID=18869872

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001001213A Expired - Fee Related JP4674970B2 (en) 2001-01-09 2001-01-09 Metal wire bonding method

Country Status (1)

Country Link
JP (1) JP4674970B2 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02303038A (en) * 1989-05-17 1990-12-17 Seiko Epson Corp Wire bonding
JPH03263335A (en) * 1990-03-13 1991-11-22 Mitsubishi Electric Corp Apparatus for manufacture of semiconductor device
JPH0511441U (en) * 1991-07-24 1993-02-12 日立電子株式会社 Hybrid integrated circuit device
JPH0621134A (en) * 1992-07-01 1994-01-28 Seiko Epson Corp Semiconductor device and manufacture thereof
JP2000124397A (en) * 1993-11-16 2000-04-28 Formfactor Inc Semiconductor assembly and test method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02303038A (en) * 1989-05-17 1990-12-17 Seiko Epson Corp Wire bonding
JPH03263335A (en) * 1990-03-13 1991-11-22 Mitsubishi Electric Corp Apparatus for manufacture of semiconductor device
JPH0511441U (en) * 1991-07-24 1993-02-12 日立電子株式会社 Hybrid integrated circuit device
JPH0621134A (en) * 1992-07-01 1994-01-28 Seiko Epson Corp Semiconductor device and manufacture thereof
JP2000124397A (en) * 1993-11-16 2000-04-28 Formfactor Inc Semiconductor assembly and test method

Also Published As

Publication number Publication date
JP2002208609A (en) 2002-07-26

Similar Documents

Publication Publication Date Title
JP3513444B2 (en) Method for forming pin-shaped wires
TW469551B (en) Method for forming pin-like wires and the like
US6295729B1 (en) Angled flying lead wire bonding process
JP2004221257A (en) Wire bonding method and device thereof
JP5899907B2 (en) Wedge tool for wire bonding, bonding apparatus, wire bonding method, and method for manufacturing semiconductor device
CN104395995A (en) Wire bonding apparatus and method for producing semiconductor device
EP0791955A2 (en) Improvements in or relating to integrated circuit interconnections
US20080272176A1 (en) Wedge-bonding of wires in electronic device manufacture with reversible wedge bonding
JP2007067342A (en) Method of bonding wire and wire bonding apparatus
US7597231B2 (en) Wire bonding capillary tool having multiple outer steps
JP2004536456A (en) Extra fine pitch capillary
JP2004525511A (en) Controlled damping capillary
US6321969B1 (en) Efficient energy transfer capillary
WO2005018864A2 (en) Capillary with contained inner chamfer
KR101221928B1 (en) Wire bonding capillary tool having multiple outer steps
JP4674970B2 (en) Metal wire bonding method
JP4369401B2 (en) Wire bonding method
KR20070014761A (en) Method of bonding wire and apparatus for performing the same
TW201533877A (en) Method for producing semiconductor apparatus, semiconductor apparatus and wire bonding apparatus
JP2007150225A (en) Capillary for wire bonding device
CN106233444B (en) The manufacturing method and throwing device of semiconductor device
JP2010129922A (en) Method of manufacturing semiconductor laser
JP3972517B2 (en) How to connect electronic components
KR100660821B1 (en) Wire bonding method
CN219925020U (en) Bonding chopper

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20071121

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20081119

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081125

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20090127

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20091111

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091117

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100115

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20100914

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101126

A911 Transfer of reconsideration by examiner before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20101209

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110125

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110125

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140204

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees