JP4668915B2 - プロセスチャンバのコンポーネントの洗浄 - Google Patents

プロセスチャンバのコンポーネントの洗浄 Download PDF

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Publication number: JP4668915B2
Authority: JP; Japan
Prior art keywords: gas; component; ceramic; pin; shaft
Prior art date: 2003-05-22
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

JP2006532410A

Other languages

English (en)

Japanese (ja)

Other versions

JP2006528551A (ja

Inventor

ブハトナガー，アシシュ

クンゼ，チャールズ，エス．

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Applied Materials Inc

Original Assignee

Applied Materials Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2003-05-22

Filing date

2004-04-14

Publication date

2011-04-13

2004-04-14 Application filed by Applied Materials Inc filed Critical Applied Materials Inc

2006-12-21 Publication of JP2006528551A publication Critical patent/JP2006528551A/ja

2011-04-13 Application granted granted Critical

2011-04-13 Publication of JP4668915B2 publication Critical patent/JP4668915B2/ja

2024-04-14 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

238000000034 method Methods 0.000 title claims description 122
230000008569 process Effects 0.000 title claims description 105
238000004140 cleaning Methods 0.000 title claims description 37
239000007789 gas Substances 0.000 claims description 167
239000000758 substrate Substances 0.000 claims description 45
239000000919 ceramic Substances 0.000 claims description 37
239000003929 acidic solution Substances 0.000 claims description 30
229910052751 metal Inorganic materials 0.000 claims description 29
239000002184 metal Substances 0.000 claims description 29
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 16
238000012545 processing Methods 0.000 claims description 14
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
229910017604 nitric acid Inorganic materials 0.000 claims description 5
229910052786 argon Inorganic materials 0.000 claims description 4
239000011248 coating agent Substances 0.000 claims description 4
238000000576 coating method Methods 0.000 claims description 4
229910052757 nitrogen Inorganic materials 0.000 claims description 3
230000000087 stabilizing effect Effects 0.000 claims description 2
238000012360 testing method Methods 0.000 claims description 2
210000002381 plasma Anatomy 0.000 description 29
239000002585 base Substances 0.000 description 20
239000000463 material Substances 0.000 description 19
238000012546 transfer Methods 0.000 description 10
238000005229 chemical vapour deposition Methods 0.000 description 6
239000007788 liquid Substances 0.000 description 6
230000002378 acidificating effect Effects 0.000 description 5
229910052782 aluminium Inorganic materials 0.000 description 5
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
239000000203 mixture Substances 0.000 description 5
230000006641 stabilisation Effects 0.000 description 5
238000011105 stabilization Methods 0.000 description 5
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
238000009825 accumulation Methods 0.000 description 4
QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 4
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
239000012190 activator Substances 0.000 description 3
239000007864 aqueous solution Substances 0.000 description 3
229910010293 ceramic material Inorganic materials 0.000 description 3
239000011261 inert gas Substances 0.000 description 3
238000007789 sealing Methods 0.000 description 3
239000004065 semiconductor Substances 0.000 description 3
229910052710 silicon Inorganic materials 0.000 description 3
239000010703 silicon Substances 0.000 description 3
239000000243 solution Substances 0.000 description 3
239000000126 substance Substances 0.000 description 3
LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
229910004298 SiO 2 Inorganic materials 0.000 description 2
230000007797 corrosion Effects 0.000 description 2
238000005260 corrosion Methods 0.000 description 2
239000008367 deionised water Substances 0.000 description 2
229910021641 deionized water Inorganic materials 0.000 description 2
238000010586 diagram Methods 0.000 description 2
239000003989 dielectric material Substances 0.000 description 2
230000003628 erosive effect Effects 0.000 description 2
230000001939 inductive effect Effects 0.000 description 2
238000003780 insertion Methods 0.000 description 2
230000037431 insertion Effects 0.000 description 2
150000002500 ions Chemical class 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
150000002739 metals Chemical class 0.000 description 2
239000002245 particle Substances 0.000 description 2
239000011148 porous material Substances 0.000 description 2
229910052814 silicon oxide Inorganic materials 0.000 description 2
229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
229910052581 Si3N4 Inorganic materials 0.000 description 1
239000002253 acid Substances 0.000 description 1
229910045601 alloy Inorganic materials 0.000 description 1
239000000956 alloy Substances 0.000 description 1
239000003637 basic solution Substances 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
239000013626 chemical specie Substances 0.000 description 1
239000002131 composite material Substances 0.000 description 1
238000004590 computer program Methods 0.000 description 1
239000000356 contaminant Substances 0.000 description 1
229910052802 copper Inorganic materials 0.000 description 1
239000010949 copper Substances 0.000 description 1
230000008878 coupling Effects 0.000 description 1
238000010168 coupling process Methods 0.000 description 1
238000005859 coupling reaction Methods 0.000 description 1
238000005520 cutting process Methods 0.000 description 1
230000007547 defect Effects 0.000 description 1
238000000151 deposition Methods 0.000 description 1
230000008021 deposition Effects 0.000 description 1
229910003460 diamond Inorganic materials 0.000 description 1
239000010432 diamond Substances 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
238000007598 dipping method Methods 0.000 description 1
238000004090 dissolution Methods 0.000 description 1
238000005108 dry cleaning Methods 0.000 description 1
230000000694 effects Effects 0.000 description 1
230000005672 electromagnetic field Effects 0.000 description 1
238000005530 etching Methods 0.000 description 1
230000004907 flux Effects 0.000 description 1
230000006870 function Effects 0.000 description 1
239000011521 glass Substances 0.000 description 1
239000001307 helium Substances 0.000 description 1
229910052734 helium Inorganic materials 0.000 description 1
SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
239000012535 impurity Substances 0.000 description 1
229910001026 inconel Inorganic materials 0.000 description 1
239000012212 insulator Substances 0.000 description 1
150000002736 metal compounds Chemical class 0.000 description 1
229910052750 molybdenum Inorganic materials 0.000 description 1
239000011733 molybdenum Substances 0.000 description 1
229910052574 oxide ceramic Inorganic materials 0.000 description 1
239000011224 oxide ceramic Substances 0.000 description 1
TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
230000002093 peripheral effect Effects 0.000 description 1
229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
229920000642 polymer Polymers 0.000 description 1
229920005591 polysilicon Polymers 0.000 description 1
239000000843 powder Substances 0.000 description 1
238000002360 preparation method Methods 0.000 description 1
238000010926 purge Methods 0.000 description 1
229910021332 silicide Inorganic materials 0.000 description 1
FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
235000012239 silicon dioxide Nutrition 0.000 description 1
239000000377 silicon dioxide Substances 0.000 description 1
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
238000002791 soaking Methods 0.000 description 1
239000013077 target material Substances 0.000 description 1
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
229910052721 tungsten Inorganic materials 0.000 description 1
239000010937 tungsten Substances 0.000 description 1
238000009827 uniform distribution Methods 0.000 description 1
238000013022 venting Methods 0.000 description 1

Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/04—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by a combination of operations
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/905—Cleaning of reaction chamber

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Mechanical Engineering (AREA)
Physics & Mathematics (AREA)
General Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Optics & Photonics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Drying Of Semiconductors (AREA)
Cleaning In General (AREA)
Cleaning By Liquid Or Steam (AREA)

JP2006532410A 2003-05-22 2004-04-14 プロセスチャンバのコンポーネントの洗浄 Expired - Fee Related JP4668915B2 (ja)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US10/444,284 US7045020B2 (en)	2003-05-22	2003-05-22	Cleaning a component of a process chamber
PCT/US2004/011541 WO2004105972A1 (en)	2003-05-22	2004-04-14	Cleaning a component of a process chamber

Publications (2)

Publication Number	Publication Date
JP2006528551A JP2006528551A (ja)	2006-12-21
JP4668915B2 true JP4668915B2 (ja)	2011-04-13

Family

ID=33450616

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2006532410A Expired - Fee Related JP4668915B2 (ja)	2003-05-22	2004-04-14	プロセスチャンバのコンポーネントの洗浄

Country Status (8)

Country	Link
US (1)	US7045020B2 (zh)
EP (1)	EP1635962B1 (zh)
JP (1)	JP4668915B2 (zh)
KR (1)	KR101045442B1 (zh)
CN (1)	CN1795058B (zh)
DE (1)	DE602004021254D1 (zh)
TW (1)	TWI298176B (zh)
WO (1)	WO2004105972A1 (zh)

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WO2021039838A1 (ja)	2019-08-28	2021-03-04	株式会社新菱	ガス孔をもつ半導体製造装置部品の洗浄方法
KR102495074B1 (ko)	2022-08-05	2023-02-06	디오셈 주식회사	기판 처리 장치에서 인-라인 청소가 가능한 홀 클리너 및 이를 적용한 홀 청소 방법
US11981880B2 (en)	2020-11-02	2024-05-14	Tokyo Ohka Kogyo Co., Ltd.	Cleaning composition and cleaning method for component of semiconductor manufacturing process chamber

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US10319739B2 (en)	2017-02-08	2019-06-11	Applied Materials, Inc.	Accommodating imperfectly aligned memory holes
US10943834B2 (en)	2017-03-13	2021-03-09	Applied Materials, Inc.	Replacement contact process
US10319649B2 (en)	2017-04-11	2019-06-11	Applied Materials, Inc.	Optical emission spectroscopy (OES) for remote plasma monitoring
US10950500B2 (en)	2017-05-05	2021-03-16	Applied Materials, Inc.	Methods and apparatus for filling a feature disposed in a substrate
US11276590B2 (en)	2017-05-17	2022-03-15	Applied Materials, Inc.	Multi-zone semiconductor substrate supports
US11276559B2 (en)	2017-05-17	2022-03-15	Applied Materials, Inc.	Semiconductor processing chamber for multiple precursor flow
US10049891B1 (en)	2017-05-31	2018-08-14	Applied Materials, Inc.	Selective in situ cobalt residue removal
US10497579B2 (en)	2017-05-31	2019-12-03	Applied Materials, Inc.	Water-free etching methods
US10920320B2 (en)	2017-06-16	2021-02-16	Applied Materials, Inc.	Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en)	2017-06-26	2020-01-21	Applied Materials, Inc.	3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en)	2017-07-07	2020-07-28	Applied Materials, Inc.	Tantalum-containing material removal
US10541184B2 (en)	2017-07-11	2020-01-21	Applied Materials, Inc.	Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en)	2017-07-17	2019-07-16	Applied Materials, Inc.	Non-halogen etching of silicon-containing materials
US10170336B1 (en)	2017-08-04	2019-01-01	Applied Materials, Inc.	Methods for anisotropic control of selective silicon removal
US10043674B1 (en)	2017-08-04	2018-08-07	Applied Materials, Inc.	Germanium etching systems and methods
US10297458B2 (en)	2017-08-07	2019-05-21	Applied Materials, Inc.	Process window widening using coated parts in plasma etch processes
US10283324B1 (en)	2017-10-24	2019-05-07	Applied Materials, Inc.	Oxygen treatment for nitride etching
US10128086B1 (en)	2017-10-24	2018-11-13	Applied Materials, Inc.	Silicon pretreatment for nitride removal
US10256112B1 (en)	2017-12-08	2019-04-09	Applied Materials, Inc.	Selective tungsten removal
US10903054B2 (en)	2017-12-19	2021-01-26	Applied Materials, Inc.	Multi-zone gas distribution systems and methods
US11328909B2 (en)	2017-12-22	2022-05-10	Applied Materials, Inc.	Chamber conditioning and removal processes
US10854426B2 (en)	2018-01-08	2020-12-01	Applied Materials, Inc.	Metal recess for semiconductor structures
US10964512B2 (en)	2018-02-15	2021-03-30	Applied Materials, Inc.	Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en)	2018-02-15	2020-06-09	Applied Materials, Inc.	Semiconductor processing chamber multistage mixing apparatus
TWI716818B (zh)	2018-02-28	2021-01-21	美商應用材料股份有限公司	形成氣隙的系統及方法
US10593560B2 (en)	2018-03-01	2020-03-17	Applied Materials, Inc.	Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en)	2018-03-12	2019-06-11	Applied Materials, Inc.	Thermal silicon etch
US10497573B2 (en)	2018-03-13	2019-12-03	Applied Materials, Inc.	Selective atomic layer etching of semiconductor materials
US10573527B2 (en)	2018-04-06	2020-02-25	Applied Materials, Inc.	Gas-phase selective etching systems and methods
US10490406B2 (en)	2018-04-10	2019-11-26	Appled Materials, Inc.	Systems and methods for material breakthrough
US10699879B2 (en)	2018-04-17	2020-06-30	Applied Materials, Inc.	Two piece electrode assembly with gap for plasma control
US10886137B2 (en)	2018-04-30	2021-01-05	Applied Materials, Inc.	Selective nitride removal
US10755941B2 (en)	2018-07-06	2020-08-25	Applied Materials, Inc.	Self-limiting selective etching systems and methods
US10872778B2 (en)	2018-07-06	2020-12-22	Applied Materials, Inc.	Systems and methods utilizing solid-phase etchants
US10672642B2 (en)	2018-07-24	2020-06-02	Applied Materials, Inc.	Systems and methods for pedestal configuration
US10892198B2 (en)	2018-09-14	2021-01-12	Applied Materials, Inc.	Systems and methods for improved performance in semiconductor processing
US11049755B2 (en)	2018-09-14	2021-06-29	Applied Materials, Inc.	Semiconductor substrate supports with embedded RF shield
US11062887B2 (en)	2018-09-17	2021-07-13	Applied Materials, Inc.	High temperature RF heater pedestals
US11417534B2 (en)	2018-09-21	2022-08-16	Applied Materials, Inc.	Selective material removal
US11682560B2 (en)	2018-10-11	2023-06-20	Applied Materials, Inc.	Systems and methods for hafnium-containing film removal
US11121002B2 (en)	2018-10-24	2021-09-14	Applied Materials, Inc.	Systems and methods for etching metals and metal derivatives
US11437242B2 (en)	2018-11-27	2022-09-06	Applied Materials, Inc.	Selective removal of silicon-containing materials
US11721527B2 (en)	2019-01-07	2023-08-08	Applied Materials, Inc.	Processing chamber mixing systems
US10920319B2 (en)	2019-01-11	2021-02-16	Applied Materials, Inc.	Ceramic showerheads with conductive electrodes
JP7166950B2 (ja)	2019-02-07	2022-11-08	キオクシア株式会社	半導体製造装置および半導体装置の製造方法
US20210265137A1 (en) *	2020-02-26	2021-08-26	Intel Corporation	Reconditioning of reactive process chamber components for reduced surface oxidation
JP7482657B2 (ja) *	2020-03-17	2024-05-14	東京エレクトロン株式会社	クリーニング方法及び半導体装置の製造方法
TWI757013B (zh) *	2020-12-28	2022-03-01	友達光電股份有限公司	控制製程腔室清潔氣體用量的方法及製程處理系統
CN112934832A (zh) *	2021-04-19	2021-06-11	北京北方华创微电子装备有限公司	陶瓷件清洗方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6421787U (zh) *	1987-07-30	1989-02-03
JP2000198042A (ja) *	1999-01-04	2000-07-18	Sankyo Seiki Mfg Co Ltd	穴の加工装置及び加工方法
JP2001058167A (ja) *	1999-06-14	2001-03-06	Nippon Borubokkusu Kk	配管内の清掃方法及び治具
JP2001098298A (ja) *	1999-09-27	2001-04-10	Hitachi Plant Eng & Constr Co Ltd	アルミノシリケートガラス基板又はセラミックガラス基板の洗浄液及び洗浄方法
JP2002153832A (ja) *	2000-11-21	2002-05-28	Sanyo Electric Co Ltd	プラズマ洗浄装置
JP2002280365A (ja) *	2001-03-19	2002-09-27	Applied Materials Inc	静電チャックのクリーニング方法
JP2003136027A (ja) *	2001-11-01	2003-05-13	Ngk Insulators Ltd	半導体製造装置中で使用するためのセラミック部材を洗浄する方法、洗浄剤および洗浄剤の組み合わせ

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE3609920A1 (de) *	1986-03-24	1987-10-01	Erich Brosa	Verfahren zur herstellung von stabilen implantationen fuer zahnersatz im knochen des kiefers
US4853081A (en) *	1987-10-30	1989-08-01	Ibm Corporation	Process for removing contaminant
IE904358A1 (en) *	1990-12-04	1992-06-17	Grohe Kg Hans	Shower unit with internal unclogging device
US5539609A (en) *	1992-12-02	1996-07-23	Applied Materials, Inc.	Electrostatic chuck usable in high density plasma
US5403459A (en) *	1993-05-17	1995-04-04	Applied Materials, Inc.	Cleaning of a PVD chamber containing a collimator
JP3158264B2 (ja) *	1993-08-11	2001-04-23	東京エレクトロン株式会社	ガス処理装置
US5507874A (en) *	1994-06-03	1996-04-16	Applied Materials, Inc.	Method of cleaning of an electrostatic chuck in plasma reactors
US5660640A (en) *	1995-06-16	1997-08-26	Joray Corporation	Method of removing sputter deposition from components of vacuum deposition equipment
US5671119A (en) *	1996-03-22	1997-09-23	Taiwan Semiconductor Manufacturing Company, Ltd.	Process for cleaning an electrostatic chuck of a plasma etching apparatus
US5746928A (en) *	1996-06-03	1998-05-05	Taiwan Semiconductor Manufacturing Company Ltd	Process for cleaning an electrostatic chuck of a plasma etching apparatus
TW452606B (en) *	1997-12-05	2001-09-01	Samsung Electronics Co Ltd	Method for cleaning inside of chamber using RF plasma
US6170496B1 (en) *	1998-08-26	2001-01-09	Taiwan Semiconductor Manufacturing Co., Ltd.	Apparatus and method for servicing a wafer platform
US6926016B1 (en) *	2001-02-15	2005-08-09	Quantum Global Technologies, Llc	System for removing contaminants from semiconductor process equipment
KR100444149B1 (ko) *	2000-07-22	2004-08-09	주식회사 아이피에스	Ald 박막증착설비용 클리닝방법
JP4409134B2 (ja) *	2001-10-09	2010-02-03	パナソニック株式会社	実装システム
US6821350B2 (en) *	2002-01-23	2004-11-23	Applied Materials, Inc.	Cleaning process residues on a process chamber component
JP3876167B2 (ja) *	2002-02-13	2007-01-31	川崎マイクロエレクトロニクス株式会社	洗浄方法および半導体装置の製造方法
US20030190870A1 (en) *	2002-04-03	2003-10-09	Applied Materials, Inc.	Cleaning ceramic surfaces

2003
- 2003-05-22 US US10/444,284 patent/US7045020B2/en not_active Expired - Fee Related
2004
- 2004-04-14 KR KR1020057022218A patent/KR101045442B1/ko active IP Right Grant
- 2004-04-14 JP JP2006532410A patent/JP4668915B2/ja not_active Expired - Fee Related
- 2004-04-14 EP EP04750128A patent/EP1635962B1/en not_active Expired - Lifetime
- 2004-04-14 WO PCT/US2004/011541 patent/WO2004105972A1/en active Application Filing
- 2004-04-14 DE DE602004021254T patent/DE602004021254D1/de not_active Expired - Lifetime
- 2004-04-14 CN CN2004800140410A patent/CN1795058B/zh not_active Expired - Lifetime
- 2004-05-21 TW TW093114453A patent/TWI298176B/zh active

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6421787U (zh) *	1987-07-30	1989-02-03
JP2000198042A (ja) *	1999-01-04	2000-07-18	Sankyo Seiki Mfg Co Ltd	穴の加工装置及び加工方法
JP2001058167A (ja) *	1999-06-14	2001-03-06	Nippon Borubokkusu Kk	配管内の清掃方法及び治具
JP2001098298A (ja) *	1999-09-27	2001-04-10	Hitachi Plant Eng & Constr Co Ltd	アルミノシリケートガラス基板又はセラミックガラス基板の洗浄液及び洗浄方法
JP2002153832A (ja) *	2000-11-21	2002-05-28	Sanyo Electric Co Ltd	プラズマ洗浄装置
JP2002280365A (ja) *	2001-03-19	2002-09-27	Applied Materials Inc	静電チャックのクリーニング方法
JP2003136027A (ja) *	2001-11-01	2003-05-13	Ngk Insulators Ltd	半導体製造装置中で使用するためのセラミック部材を洗浄する方法、洗浄剤および洗浄剤の組み合わせ

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO2021039838A1 (ja)	2019-08-28	2021-03-04	株式会社新菱	ガス孔をもつ半導体製造装置部品の洗浄方法
US11753714B2 (en)	2019-08-28	2023-09-12	Shinryo Corporation	Washing method of semiconductor manufacturing device component having gas holes
US11981880B2 (en)	2020-11-02	2024-05-14	Tokyo Ohka Kogyo Co., Ltd.	Cleaning composition and cleaning method for component of semiconductor manufacturing process chamber
KR102495074B1 (ko)	2022-08-05	2023-02-06	디오셈 주식회사	기판 처리 장치에서 인-라인 청소가 가능한 홀 클리너 및 이를 적용한 홀 청소 방법

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CN1795058B (zh)	2011-09-14
TWI298176B (en)	2008-06-21
EP1635962A1 (en)	2006-03-22
TW200428479A (en)	2004-12-16
US20040231706A1 (en)	2004-11-25
JP2006528551A (ja)	2006-12-21
KR101045442B1 (ko)	2011-06-30
US7045020B2 (en)	2006-05-16
WO2004105972A1 (en)	2004-12-09
DE602004021254D1 (de)	2009-07-09
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