JP4646803B2 - シリコン窒化膜の形成方法 - Google Patents
シリコン窒化膜の形成方法 Download PDFInfo
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- JP4646803B2 JP4646803B2 JP2005380965A JP2005380965A JP4646803B2 JP 4646803 B2 JP4646803 B2 JP 4646803B2 JP 2005380965 A JP2005380965 A JP 2005380965A JP 2005380965 A JP2005380965 A JP 2005380965A JP 4646803 B2 JP4646803 B2 JP 4646803B2
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- nitride film
- silicon nitride
- molybdenum
- forming
- electrode
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- Formation Of Insulating Films (AREA)
Description
2、20 シリコン酸化膜
3 モリブデン窒化膜
4 シリコン窒化膜
5、50 モリブデン電極
60 第一のシリコン窒化膜
70 第二のシリコン窒化膜
Claims (2)
- モリブデン電極が形成された半導体基板を減圧CVD装置内に配置する工程と、前記減圧CVD装置内を700度よりも低い温度に加熱すると共に窒素を含む原料ガス及びシラン系ガスを導入し、前記原料ガスに含まれる窒素と前記モリブデン電極との反応を抑制しつつ前記モリブデン電極上にシリコン窒化膜を形成する第1のシリコン窒化膜形成工程と、前記第1のシリコン窒化膜形成工程の後、前記減圧CVD装置内の温度を700度よりも高い温度に変更して再度シリコン窒化膜を形成する、第2のシリコン窒化膜形成工程とを有するシリコン窒化膜の形成方法。
- 第1のシリコン窒化膜形成工程は、5〜50オングストロームの膜厚を有するシリコン窒化膜を形成する工程であることを特徴とする請求項1記載のシリコン窒化膜の形成方法。
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JP2005380965A JP4646803B2 (ja) | 2005-12-13 | 2005-12-13 | シリコン窒化膜の形成方法 |
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JP2005380965A JP4646803B2 (ja) | 2005-12-13 | 2005-12-13 | シリコン窒化膜の形成方法 |
Publications (2)
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JP2007165813A JP2007165813A (ja) | 2007-06-28 |
JP4646803B2 true JP4646803B2 (ja) | 2011-03-09 |
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JP2005380965A Expired - Fee Related JP4646803B2 (ja) | 2005-12-13 | 2005-12-13 | シリコン窒化膜の形成方法 |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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RU2522182C1 (ru) * | 2012-12-17 | 2014-07-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования Кабардино-Балкарский государственный университет им. Х.М. Бербекова | Способ изготовления полупроводникового прибора |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1041249A (ja) * | 1996-07-23 | 1998-02-13 | Sony Corp | 半導体装置の製造方法 |
JP2004193629A (ja) * | 1996-12-03 | 2004-07-08 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
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- 2005-12-13 JP JP2005380965A patent/JP4646803B2/ja not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1041249A (ja) * | 1996-07-23 | 1998-02-13 | Sony Corp | 半導体装置の製造方法 |
JP2004193629A (ja) * | 1996-12-03 | 2004-07-08 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
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JP2007165813A (ja) | 2007-06-28 |
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