JP4643522B2 - テープ状厚膜ybco超電導体の製造方法 - Google Patents
テープ状厚膜ybco超電導体の製造方法 Download PDFInfo
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- 239000002887 superconductor Substances 0.000 title claims description 70
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 title claims 11
- 239000000758 substrate Substances 0.000 claims description 46
- 238000010438 heat treatment Methods 0.000 claims description 43
- 239000000243 solution Substances 0.000 claims description 37
- 239000002994 raw material Substances 0.000 claims description 36
- 238000001354 calcination Methods 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 16
- VFRSADQPWYCXDG-LEUCUCNGSA-N ethyl (2s,5s)-5-methylpyrrolidine-2-carboxylate;2,2,2-trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F.CCOC(=O)[C@@H]1CC[C@H](C)N1 VFRSADQPWYCXDG-LEUCUCNGSA-N 0.000 claims description 13
- 125000005609 naphthenate group Chemical group 0.000 claims description 11
- 239000002131 composite material Substances 0.000 claims description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 5
- 229910052788 barium Inorganic materials 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- 239000003960 organic solvent Substances 0.000 claims description 5
- DTQVDTLACAAQTR-UHFFFAOYSA-M Trifluoroacetate Chemical compound [O-]C(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-M 0.000 claims description 4
- 239000011259 mixed solution Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- YPIFGDQKSSMYHQ-UHFFFAOYSA-M 7,7-dimethyloctanoate Chemical compound CC(C)(C)CCCCCC([O-])=O YPIFGDQKSSMYHQ-UHFFFAOYSA-M 0.000 claims description 2
- XZOYHFBNQHPJRQ-UHFFFAOYSA-N 7-methyloctanoic acid Chemical class CC(C)CCCCCC(O)=O XZOYHFBNQHPJRQ-UHFFFAOYSA-N 0.000 claims description 2
- 125000005474 octanoate group Chemical group 0.000 claims 1
- 239000010408 film Substances 0.000 description 61
- 238000000034 method Methods 0.000 description 40
- 239000013078 crystal Substances 0.000 description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 13
- ZPVFWPFBNIEHGJ-UHFFFAOYSA-N 2-octanone Chemical compound CCCCCCC(C)=O ZPVFWPFBNIEHGJ-UHFFFAOYSA-N 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 9
- 238000010304 firing Methods 0.000 description 8
- 238000002425 crystallisation Methods 0.000 description 7
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- -1 organic acid salt Chemical class 0.000 description 7
- 238000002441 X-ray diffraction Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
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- 239000007789 gas Substances 0.000 description 6
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- 239000007858 starting material Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
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- 150000003839 salts Chemical class 0.000 description 3
- 238000005204 segregation Methods 0.000 description 3
- 230000008719 thickening Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 241000954177 Bangana ariza Species 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 229910000856 hastalloy Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- WWZKQHOCKIZLMA-UHFFFAOYSA-M octanoate Chemical compound CCCCCCCC([O-])=O WWZKQHOCKIZLMA-UHFFFAOYSA-M 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G3/00—Compounds of copper
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- C—CHEMISTRY; METALLURGY
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- C01F11/00—Compounds of calcium, strontium, or barium
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- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G1/00—Methods of preparing compounds of metals not covered by subclasses C01B, C01C, C01D, or C01F, in general
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1229—Composition of the substrate
- C23C18/1241—Metallic substrates
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- Superconductors And Manufacturing Methods Therefor (AREA)
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- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Description
MOD法における上記の問題を解決するために、炭酸塩を経由せずにRe系(123)超電導体を形成する方法として、フッ素を含む有機酸塩(例えば、TFA塩:トリフルオロ酢酸塩)を出発原料とし、水蒸気雰囲気中の水蒸気分圧の制御下で熱処理を行い、フッ化物の分解を経由して超電導体を得る方法が近年精力的に行われている。
この傾向は、塗布と仮焼熱処理を繰り返して多層構造の酸化物超電導前駆体膜を形成して厚膜化する場合に著しくなる。その結果、得られた前駆体厚膜を結晶化し超電導膜を得る際にクラックがそのままの状態で残存するため、通電時の電流経路を阻害してしまうことによりJc特性は著しく低下する。
上記の中間層は、バッファ層としての機能を有し、超電導層との反応を抑制して超電導特性の低下を防止し、超電導層との整合性を維持するために配置される。
上記の中間層としては、例えば、第1中間層としてMOD法等により形成されたA2Zr2O7膜(ここでAは、Ce、GdまたはSmのいずれか1種を示す。)が、第2中間層としてMOD法、CVD法又はパルス蒸着法等により形成されたCeO2膜またはCe―Gd−O膜からなるものが用いられる。
基板として、ハステロイテープ上に0.7μm厚さのGd2Zr2O7から成る第1中間層及び0.4μm厚さのCeO2からなる第2中間層を順次形成した複合基板を用いた。この場合の第2中間層CeO2のΔφは、4.1°であった。
酸素分圧0.1%のアルゴンガス雰囲気中で5℃/minの昇温速度で760℃の焼成温度まで加熱し、この温度で200min保持した後、炉冷することにより施した。
YBCO(YBa2Cu3OY)の(005)面のピーク値=189751cps、Δφ=4.12deg、Δω=1.59deg、∫ω=38775の値が得られた。
実施例1と同一の複合基板を用い、Yのトリフルオロ酢酸塩(Y−TFA)、Baのトリフルオロ酢酸塩(Ba―TFA)及びCuのナフテン酸塩をY:Ba:Cuのモル比が1:1.8:3となるように混合し、2−オクタノン中に金属含有量が1.2mol/リットルの濃度に溶解して原料溶液を作成した。この原料溶液の粘度は78.3cPであった。
YBCO(YBa2Cu3OY)の(005)面のピーク値=182099cps、Δφ=4.31deg、Δω=1.46deg、∫ω=38545の値が得られた。
実施例1と同一の複合基板を用い、Yのトリフルオロ酢酸塩(Y−TFA)、Baのトリフルオロ酢酸塩(Ba―TFA)及びCuのナフテン酸塩をY:Ba:Cuのモル比が1:1.0:3となるように混合し、2−オクタノン中に金属含有量が1.2mol/リットルの濃度に溶解して原料溶液を作成した。この原料溶液の粘度は79.7cPであった。
実施例1と同一の複合基板を用い、Yのトリフルオロ酢酸塩(Y−TFA)、Baのトリフルオロ酢酸塩(Ba―TFA)及びCuのナフテン酸塩をY:Ba:Cuのモル比が1:2.0:3(標準組成)となるように混合し、2−オクタノン中に金属含有量が1.2mol/リットルの濃度に溶解して原料溶液を作成した。この原料溶液の粘度は70.7cPであった。
YBCO(YBa2Cu3OY)の(005)面のピーク値=179086cps、Δφ=4.12deg、Δω=1.47deg、∫ω=20902の値が得られた。
実施例1と同一の複合基板を用い、Yのトリフルオロ酢酸塩(Y−TFA)、Baのトリフルオロ酢酸塩(Ba―TFA)及びCuのナフテン酸塩をY:Ba:Cuのモル比が1:2.2:3となるように混合し、2−オクタノン中に金属含有量が1.2mol/リットルの濃度に溶解して原料溶液を作成した。この原料溶液の粘度は70.7cPであった。
YBCO(YBa2Cu3OY)の(005)面のピーク値=158745cps、Δφ=4.23deg、Δω=1.56deg、∫ω=37456の値が得られた。
実施例1と同一の複合基板を用い、Yのトリフルオロ酢酸塩(Y−TFA)、Baのトリフルオロ酢酸塩(Ba―TFA)及びCuのナフテン酸塩をY:Ba:Cuのモル比が1:2.5:3となるように混合し、2−オクタノン中に金属含有量が1.2mol/リットルの濃度に溶解して原料溶液を作成した。この原料溶液の粘度は60.5cPであった。
YBCO(YBa2Cu3OY)の(005)面のピーク値=141528cps、Δφ=5.29deg、Δω=1.68deg、∫ω=17975の値が得られた。
結晶の面内配向度とa―b面内の結晶方位の配向度はそれ程の差異はないが、Jcは実施例1では3.20MA/cm2(Ic=525A/cm)、比較例1ではJc=2.58MA/cm2(Ic=307A/cm)と大きな差異がある。これは、比較例1においては、Y(123)超電導体の結晶粒の粒界に余剰のBaをベースとする不純物の析出とクラックの発生により結晶粒間の電気的接合性を低下させる結果と考えられ、従って、Baのモル比が比較例2(Baのモル比=2.2)及び比較例3(Baのモル比=2.5)とより高くなるに従って急激にJcが低下する。
1a 2軸配向性基板
1b 第1中間層
1c 第2中間層
2 YBCO超電導層
3 安定化層
10 テープ状YBCO超電導体
Claims (7)
- 基板上に、YBCO超電導体を構成する金属元素を含む原料溶液を塗布した後、仮焼熱処理を施し、次いで超電導体生成の熱処理を施すことによりYBCO超電導体を製造する方法において、前記原料溶液中のY、Ba及びCuのモル比をY:Ba:Cu=1:X:3としたときにX<2の範囲内のBaモル比の原料溶液を用いて前記基板上に厚さ1.5μm以上のYBCO超電導膜を形成することを特徴とするテープ状厚膜YBCO超電導体の製造方法。
- 原料溶液中のBaモル比は1.0≦X≦1.8であることを特徴とする請求項1記載のテープ状厚膜YBCO超電導体の製造方法。
- 原料溶液中のBaモル比は1.3≦X≦1.7であることを特徴とする請求項1記載のテープ状厚膜YBCO超電導体の製造方法。
- 原料溶液は、有機溶媒とトリフルオロ酢酸塩、ナフテン酸塩、オクチル酸塩、ネオデカン酸塩またはイソノナン酸塩のいずれか1種以上を含む混合溶液からなることを特徴とする請求項1乃至3いずれか1項記載のテープ状厚膜YBCO超電導体の製造方法。
- 原料溶液は、有機溶媒とフッ素を含むY−TFA塩(トリフルオロ酢酸塩)、Ba−TFA塩及びCuのナフテン酸塩の混合溶液からなることを特徴とする請求項4記載のテープ状厚膜YBCO超電導体の製造方法。
- 基板は、2軸配向性基板であることを特徴とする請求項1乃至5いずれか1項記載のテープ状厚膜YBCO超電導体の製造方法。
- 基板は、2軸配向性基板の上に高配向性の中間層を形成した複合基板であることを特徴とする請求項1乃至5いずれか1項記載のテープ状厚膜YBCO超電導体の製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006226421A JP4643522B2 (ja) | 2006-08-23 | 2006-08-23 | テープ状厚膜ybco超電導体の製造方法 |
US12/376,099 US20090270263A1 (en) | 2006-08-23 | 2007-06-12 | PROCESS FOR PRODUCING TAPE-SHAPED Re-TYPE (123) SUPERCONDUCTOR |
KR1020097003474A KR101087211B1 (ko) | 2006-08-23 | 2007-06-12 | 테이프 상 후막 Re계 (123) 초전도체의 제조 방법 |
CN2007800313451A CN101506100B (zh) | 2006-08-23 | 2007-06-12 | 带状Re系(123)超导体的制造方法 |
PCT/JP2007/000623 WO2008023454A1 (en) | 2006-08-23 | 2007-06-12 | MANUFACTURING METHOD OF TAPE-SHAPED Re-BASE (123) SUPERCONDUCTOR |
EP07766933A EP2055677A4 (en) | 2006-08-23 | 2007-06-12 | METHOD OF MAKING BANDED REBASIS (123) SUPERSISTERS |
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US (1) | US20090270263A1 (ja) |
EP (1) | EP2055677A4 (ja) |
JP (1) | JP4643522B2 (ja) |
KR (1) | KR101087211B1 (ja) |
CN (1) | CN101506100B (ja) |
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JP4738322B2 (ja) * | 2006-11-30 | 2011-08-03 | 株式会社東芝 | 酸化物超電導体およびその製造方法 |
JP5270176B2 (ja) * | 2008-01-08 | 2013-08-21 | 公益財団法人国際超電導産業技術研究センター | Re系酸化物超電導線材及びその製造方法 |
JPWO2010084553A1 (ja) * | 2009-01-23 | 2012-07-12 | パナソニック株式会社 | 無線中継装置及び無線中継システム |
JP5427553B2 (ja) * | 2009-10-30 | 2014-02-26 | 公益財団法人国際超電導産業技術研究センター | 酸化物超電導導体用基材及びその製造方法と酸化物超電導導体及びその製造方法 |
JP5614831B2 (ja) * | 2010-01-15 | 2014-10-29 | 昭和電線ケーブルシステム株式会社 | 酸化物超電導電流リード |
JP5591558B2 (ja) * | 2010-02-16 | 2014-09-17 | 昭和電線ケーブルシステム株式会社 | 酸化物超電導線材の製造方法 |
JP5757718B2 (ja) * | 2010-10-27 | 2015-07-29 | 公益財団法人国際超電導産業技術研究センター | 酸化物超電導線材の製造方法 |
CN103547533A (zh) * | 2011-05-23 | 2014-01-29 | 古河电气工业株式会社 | 氧化膜超导薄膜 |
JP2013006759A (ja) * | 2011-05-23 | 2013-01-10 | Furukawa Electric Co Ltd:The | 酸化物超電導薄膜 |
CN103959401B (zh) * | 2011-11-21 | 2016-11-02 | 株式会社藤仓 | 氧化物超导电线材及其制造方法、超导电线圈和超导电缆 |
US20170287598A1 (en) * | 2014-11-05 | 2017-10-05 | Fujikura Ltd. | Oxide superconductor, superconducting wire, and a method of manufacturing the same |
JP6556674B2 (ja) * | 2016-08-10 | 2019-08-07 | 株式会社東芝 | 酸化物超電導体及びその製造方法 |
CN107768018B (zh) * | 2016-08-23 | 2019-03-12 | 株式会社东芝 | 氧化物超导体及其制造方法 |
US10541073B2 (en) * | 2016-08-31 | 2020-01-21 | Kabushiki Kaisha Toshiba | Superconducting coil and superconducting device |
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JP2004161505A (ja) * | 2002-11-08 | 2004-06-10 | Internatl Superconductivity Technology Center | 酸化物超電導厚膜用組成物及び厚膜テープ状酸化物超電導体 |
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CN1035087C (zh) * | 1987-05-18 | 1997-06-04 | 住友电气工业株式会社 | 制作超导电路图形的方法 |
CN1021175C (zh) * | 1987-12-20 | 1993-06-09 | 住友电气工业株式会社 | 复合氧化物超导薄膜 |
JP2003034527A (ja) | 2001-05-15 | 2003-02-07 | Internatl Superconductivity Technology Center | 厚膜テープ状酸化物超電導体及びその製造方法 |
JP2003300726A (ja) | 2002-04-08 | 2003-10-21 | Internatl Superconductivity Technology Center | テープ状酸化物超電導体及びその製造方法 |
JP2003059352A (ja) * | 2001-08-22 | 2003-02-28 | Internatl Superconductivity Technology Center | 表面が平坦な高温超電導体膜 |
US7622424B2 (en) * | 2004-10-01 | 2009-11-24 | American Superconductor Corporation | Thick superconductor films with improved performance |
ES2553261T3 (es) * | 2005-07-29 | 2015-12-07 | American Superconductor Corporation | Cables y bobinas superconductores a altas temperaturas |
MX2009000478A (es) * | 2006-07-17 | 2009-01-27 | Massachusetts Inst Technology | Metodo para hacer peliculas superconductoras de alta jc y soluciones de polimero-nitrato utilizadas para el mismo. |
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- 2007-06-12 CN CN2007800313451A patent/CN101506100B/zh not_active Expired - Fee Related
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JP2004161505A (ja) * | 2002-11-08 | 2004-06-10 | Internatl Superconductivity Technology Center | 酸化物超電導厚膜用組成物及び厚膜テープ状酸化物超電導体 |
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US20090270263A1 (en) | 2009-10-29 |
KR20090046848A (ko) | 2009-05-11 |
CN101506100B (zh) | 2012-12-19 |
CN101506100A (zh) | 2009-08-12 |
WO2008023454A1 (en) | 2008-02-28 |
EP2055677A1 (en) | 2009-05-06 |
EP2055677A4 (en) | 2012-12-05 |
KR101087211B1 (ko) | 2011-11-29 |
JP2008050190A (ja) | 2008-03-06 |
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