JP4637110B2 - 感光装置の駆動方法 - Google Patents
感光装置の駆動方法 Download PDFInfo
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- JP4637110B2 JP4637110B2 JP2006534757A JP2006534757A JP4637110B2 JP 4637110 B2 JP4637110 B2 JP 4637110B2 JP 2006534757 A JP2006534757 A JP 2006534757A JP 2006534757 A JP2006534757 A JP 2006534757A JP 4637110 B2 JP4637110 B2 JP 4637110B2
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- 238000000034 method Methods 0.000 title claims description 18
- 239000011159 matrix material Substances 0.000 claims description 42
- 238000003384 imaging method Methods 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 3
- 230000000977 initiatory effect Effects 0.000 claims description 2
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- 239000003990 capacitor Substances 0.000 description 11
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- 239000000463 material Substances 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
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- 239000004065 semiconductor Substances 0.000 description 3
- 238000007736 thin film deposition technique Methods 0.000 description 3
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- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20184—Detector read-out circuitry, e.g. for clearing of traps, compensating for traps or compensating for direct hits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/617—Noise processing, e.g. detecting, correcting, reducing or removing noise for reducing electromagnetic interference, e.g. clocking noise
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
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- Signal Processing (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Apparatus For Radiation Diagnosis (AREA)
Description
Claims (5)
- マトリックスの行と列との交点に分布する感光画素の前記マトリックスを備える感光装置を駆動する方法であり、前記マトリックスを画像取得段階の前にリセット段階を含む画像化周期にかけるステップを含む方法であって、
前記マトリックスの行がいくつかの群に分配され、前記リセット段階中に任意の1つの群のすべての前記行を同時にリセットするステップを含み、さらに行の各群を連続してリセットするステップを含み、さらに任意の1つの群内のすべての前記行が当該群に属さない行により分離され、
当該群に属する行が櫛の歯を形成し、
1つの群内の前記行の分布が、櫛を形成し、
Nが前記マトリックスの合計行数であるとともにnが群当りの行数である場合、1つの群を形成する行がα=N/nに相当するピッチで均一に離間されており、さらに前記櫛を少なくともα−1回移動させて前記マトリックスの前記行のすべてを走査する
ことを特徴とする方法。 - 任意の1つの群内の前記行が当該群に属さない少なくとも2行により隔てられていることを特徴とする請求項1に記載の方法。
- 行の前記群がほぼ同じ数の行を有することを特徴とする請求項1または2に記載の方法。
- 1つの群のリセットが完了するまで待ってから他の群のリセットを開始するステップを含むことを特徴とする請求項1〜3のいずれか一項に記載の方法。
- 前記画像取得段階の後に、前記画像取得段階で前記感光画素に蓄積した電荷量を読み出すことを可能にする第1の電気パルスが前記マトリックスの各行に連続して送られる読み出し段階が続き、前記リセット段階中に、前記群内の前記行をリセットするために第2の電気パルスが任意の1つの群内のすべての前記行に送られ、さらに前記第1および第2のパルスが実質的に同一であることを特徴とする請求項1〜4のいずれか一項に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0312183A FR2861242B1 (fr) | 2003-10-17 | 2003-10-17 | Procede de commande d'un dispositif photosensible |
PCT/EP2004/052526 WO2005036871A1 (fr) | 2003-10-17 | 2004-10-13 | Procede de commande d'un dispositif photosensible |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007508763A JP2007508763A (ja) | 2007-04-05 |
JP4637110B2 true JP4637110B2 (ja) | 2011-02-23 |
Family
ID=34385262
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006534757A Expired - Fee Related JP4637110B2 (ja) | 2003-10-17 | 2004-10-13 | 感光装置の駆動方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7728889B2 (ja) |
EP (1) | EP1673932B1 (ja) |
JP (1) | JP4637110B2 (ja) |
CN (1) | CN1868205A (ja) |
CA (1) | CA2539506C (ja) |
DE (1) | DE602004023406D1 (ja) |
FR (1) | FR2861242B1 (ja) |
WO (1) | WO2005036871A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2975213B1 (fr) | 2011-05-10 | 2013-05-10 | Trixell Sas | Dispositif d'adressage de lignes d'un circuit de commande pour matrice active de detection |
JP5935284B2 (ja) | 2011-10-18 | 2016-06-15 | ソニー株式会社 | 撮像装置および撮像表示システム |
EP2806456A4 (en) * | 2012-03-29 | 2015-03-18 | Asahi Kasei Microdevices Corp | LIGHT RECEIVING DEVICE |
JP5859364B2 (ja) * | 2012-03-30 | 2016-02-10 | 旭化成エレクトロニクス株式会社 | 受光強度演算デバイス及び位置検出デバイス |
JP5917233B2 (ja) * | 2012-03-30 | 2016-05-11 | 旭化成エレクトロニクス株式会社 | 受光強度演算デバイス及び位置検出デバイス |
US9554759B2 (en) * | 2013-09-18 | 2017-01-31 | Carestream Health, Inc. | Digital radiography detector image readout process |
FR3029054B1 (fr) * | 2014-11-24 | 2018-01-26 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Controle de la duree d'integration dans un dispositif photosensible |
JP7148269B2 (ja) * | 2018-05-02 | 2022-10-05 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子および撮像装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2605166B1 (fr) | 1986-10-09 | 1989-02-10 | Thomson Csf | Dispositif photosensible a l'etat solide, procede de lecture et procede de fabrication |
FR2626127B1 (fr) * | 1988-01-15 | 1990-05-04 | Thomson Csf | Matrice photosensible a trois diodes par point, sans remise a niveau |
DE4118154A1 (de) * | 1991-06-03 | 1992-12-10 | Philips Patentverwaltung | Anordnung mit einer sensormatrix und einer ruecksetzanordnung |
US5668375A (en) * | 1996-08-26 | 1997-09-16 | General Electric Company | Fast scan reset for a large area x-ray detector |
FR2760585B1 (fr) | 1997-03-07 | 1999-05-28 | Thomson Tubes Electroniques | Procede de commande d'un dispositif photosensible a faible remanence, et dispositif photosensible mettant en oeuvre le procede |
FR2770954B1 (fr) * | 1997-11-12 | 2000-01-28 | Trixell Sas | Procede de commande d'un detecteur d'image numerique a faible remanence, et detecteur d'image mettant en oeuvre le procede |
GB2332585B (en) * | 1997-12-18 | 2000-09-27 | Simage Oy | Device for imaging radiation |
US7142240B1 (en) * | 2000-07-17 | 2006-11-28 | Psion Teklogix Systems, Inc. | Active pixel sensor array reset |
GB0027931D0 (en) * | 2000-11-16 | 2001-01-03 | Sgs Thomson Microelectronics | Solid state imaging device |
US7830435B2 (en) * | 2003-09-03 | 2010-11-09 | Eastman Kodak Company | Image sensor and image capture system with extended dynamic range |
-
2003
- 2003-10-17 FR FR0312183A patent/FR2861242B1/fr not_active Expired - Fee Related
-
2004
- 2004-10-13 CN CNA2004800303530A patent/CN1868205A/zh active Pending
- 2004-10-13 CA CA2539506A patent/CA2539506C/fr not_active Expired - Fee Related
- 2004-10-13 EP EP04791216A patent/EP1673932B1/fr not_active Expired - Fee Related
- 2004-10-13 US US10/575,985 patent/US7728889B2/en active Active
- 2004-10-13 DE DE602004023406T patent/DE602004023406D1/de active Active
- 2004-10-13 WO PCT/EP2004/052526 patent/WO2005036871A1/fr active Application Filing
- 2004-10-13 JP JP2006534757A patent/JP4637110B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20070229688A1 (en) | 2007-10-04 |
JP2007508763A (ja) | 2007-04-05 |
CN1868205A (zh) | 2006-11-22 |
CA2539506A1 (fr) | 2005-04-21 |
EP1673932B1 (fr) | 2009-09-30 |
DE602004023406D1 (de) | 2009-11-12 |
WO2005036871A1 (fr) | 2005-04-21 |
FR2861242A1 (fr) | 2005-04-22 |
CA2539506C (fr) | 2013-09-17 |
US7728889B2 (en) | 2010-06-01 |
EP1673932A1 (fr) | 2006-06-28 |
FR2861242B1 (fr) | 2006-01-20 |
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