JP4631044B2 - レーザ加工方法および装置 - Google Patents
レーザ加工方法および装置 Download PDFInfo
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- JP4631044B2 JP4631044B2 JP2004156768A JP2004156768A JP4631044B2 JP 4631044 B2 JP4631044 B2 JP 4631044B2 JP 2004156768 A JP2004156768 A JP 2004156768A JP 2004156768 A JP2004156768 A JP 2004156768A JP 4631044 B2 JP4631044 B2 JP 4631044B2
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- 238000003672 processing method Methods 0.000 title claims description 15
- 230000006378 damage Effects 0.000 claims description 119
- 238000012545 processing Methods 0.000 claims description 53
- 238000000034 method Methods 0.000 claims description 39
- 230000003287 optical effect Effects 0.000 claims description 38
- 239000011521 glass Substances 0.000 claims description 28
- 230000008859 change Effects 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 7
- 238000000149 argon plasma sintering Methods 0.000 claims description 6
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 4
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 claims description 3
- 229910001632 barium fluoride Inorganic materials 0.000 claims description 3
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 3
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 3
- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 claims description 3
- 229910001637 strontium fluoride Inorganic materials 0.000 claims description 3
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 description 16
- 239000003989 dielectric material Substances 0.000 description 11
- 230000001939 inductive effect Effects 0.000 description 9
- 238000002356 laser light scattering Methods 0.000 description 9
- 238000004088 simulation Methods 0.000 description 9
- 238000005259 measurement Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000010355 oscillation Effects 0.000 description 6
- 238000004335 scaling law Methods 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 230000006399 behavior Effects 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 239000011343 solid material Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 239000005368 silicate glass Substances 0.000 description 3
- 230000002238 attenuated effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910016036 BaF 2 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- -1 calcium fluoride) Chemical class 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000009022 nonlinear effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
- C03B33/0222—Scoring using a focussed radiation beam, e.g. laser
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/09—Severing cooled glass by thermal shock
- C03B33/091—Severing cooled glass by thermal shock using at least one focussed radiation beam, e.g. laser beam
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
- C03C23/0025—Other surface treatment of glass not in the form of fibres or filaments by irradiation by a laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Mechanical Engineering (AREA)
- Toxicology (AREA)
- Plasma & Fusion (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Thermal Sciences (AREA)
- Laser Beam Processing (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Surface Treatment Of Glass (AREA)
Description
実験例1では、加工対象物としてシリケートガラス(商標名:BK7)を用いた。加工を施すレーザとして、フェムト秒チタンサファイアレーザ(波長800nm、パルス幅150fs)を使用した。そして、図1の装置により、レーザ光1を回折限界値(800nm×0.6=480nm)にほぼ等しい直径550nmのスポットにまで集光できることを確認した。これは、表面集光の対照実験、原子間力顕微鏡観察、数値シミュレーションにより確認した値である。
実験例2では、実験例1と同様にして、ガラスのフェムト秒パルスレーザ誘起損傷のレーザ強度依存性を調べた。すなわち、加工対象物としてシリケートガラス(商標名:BK7)を用い、レーザとしてフェムト秒チタンサファイアレーザ(波長800nm、パルス幅150fs)を用いた。図4は、このときのレーザ照射位置における暗視野光散乱画像の代表的な例を示す図である。図4(A)は、フルエンスF=1.45J/cm2(イラディアンスI=6.6TW/cm2)で誘起した、本発明における損傷の光散乱像を示し、図4(B)は、フルエンスF=2.1J/cm2(イラディアンスI=9.4TW/cm2)で誘起した、プラズマ発光の画像を示している。
そこで、実験例3では、ガラス(例えば、BK7ガラス)を対象にして、本発明における損傷のレーザ強度(イラディアンス)のしきい値のパルス幅依存性を調べた。使用したパルスレーザは、フェムト秒チタンサファイアレーザ(波長800nm、パルス幅150fs)、ピコ秒Nd:YAGレーザ(波長1064nm、パルス幅30ps)、ナノ秒Nd:YAGレーザ(波長1064nm、パルス幅10ns)などである。その結果、図5(A)に示すように、パルス幅が100フェムト秒から30ナノ秒の広い範囲にわたって、損傷のイラディアンスしきい値Id thは、ほぼ6TW/cm2と一定値を保つことがわかった。すなわち、損傷のイラディアンスしきい値Id thは、使用するパルスレーザのパルス幅τには全く依存せず、ほぼ一定値をとることがわかった。これは、本発明における損傷を特徴付ける重要な実験事実である。
実験例4では、様々な加工対象物に対する本発明における損傷のレーザ強度しきい値を測定した。すなわち、上記ガラスで示した本発明における損傷は、もちろん、他の誘電体材料に対して生起可能である。そこで、開口数NA=1.07、波長800nm、パルス幅220fsのパルスレーザを用いて、損傷を生起するためのレーザ強度のしきい値(パルスエネルギ/フルエンス/イラディアンス)を、図1の装置を用いて測定した。いくつかの誘電体、例えば、フッ化カルシウム(CaF2)、フッ化ストロンチウム(SrF2)、フッ化バリウム(BaF2)、フッ化マグネシウム(MgF2)、およびBK7ガラス(SiO2)に対する結果を、図8に示す。したがって、本手法は各種固体材料に対して極めて汎用性の高い技術であることがわかる。
3 集光位置
5 散乱光
10加工対象物
12 三次元ステージ
20 照射光学系
22 テレスコープ光学系
24 ダイヤフラム
26、34 対物レンズ
30 レーザ光散乱画像計測光学系
32 スポットスクリーン
36 CCDカメラ
38 光学フィルタ
100 レーザ加工装置
Claims (7)
- 加工対象物に損傷を生起させるイラディアンスしきい値以上、かつ前記加工対象物にプラズマを生起させるイラディアンスしきい値未満のイラディアンスのレーザ光を、光学系を介して前記加工対象物に集光照射し、前記加工対象物にプラズマを生起させることなく損傷を生起させるレーザ加工方法であって、
前記加工対象物は、ガラス、フッ化カルシウム、フッ化ストロンチウム、フッ化バリウムまたはフッ化マグネシウムであり、
前記レーザ光のイラディアンスは、
前記加工対象物がガラスの場合は、6.60TW/cm2以上であり、
前記加工対象物がフッ化カルシウムの場合は、13.99TW/cm2以上であり、
前記加工対象物がフッ化ストロンチウムの場合は、12.57TW/cm2以上であり、
前記加工対象物がフッ化バリウムの場合は、10.69TW/cm2以上であり、
前記加工対象物がフッ化マグネシウムの場合は、16.50TW/cm2以上であり、
前記損傷は、前記レーザ光の集光位置において暗視野型光散乱観察法により観察される、密度変化または屈折率変化である、
レーザ加工方法。 - 前記光学系を、前記レーザ光の集光位置において自己収束効果を生起させないように設定することを特徴とする請求項1記載のレーザ加工方法。
- 前記光学系は、対物レンズを有し、
前記対物レンズは、前記レーザ光の集光位置において自己収束効果を生起させない開口数を有することを特徴とする請求項2記載のレーザ加工方法。 - 前記対物レンズは、開口数NA>1のレンズであることを特徴とする請求項3記載のレーザ加工方法。
- 前記光学系は、対物レンズを有し、
前記レーザ光は、ビーム径を拡大した後、前記対物レンズに導入することを特徴とする請求項2記載のレーザ加工方法。 - 前記レーザ光を、所定のビーム断面形状に整形した後、前記加工対象物に集光照射し、前記加工対象物からの散乱光を、所定の開口を介して確認することにより、前記損傷の生起を確認することを特徴とする請求項1記載のレーザ加工方法。
- 前記レーザ光のパルス幅は、10フェムト秒から100ナノ秒の範囲内にあることを特徴とする請求項1記載のレーザ加工方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004156768A JP4631044B2 (ja) | 2004-05-26 | 2004-05-26 | レーザ加工方法および装置 |
US11/579,697 US20080314883A1 (en) | 2004-05-26 | 2005-04-18 | Laser Processing Method and Equipment |
PCT/JP2005/007403 WO2005115676A1 (ja) | 2004-05-26 | 2005-04-18 | レーザ加工方法および装置 |
Applications Claiming Priority (1)
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JP2004156768A JP4631044B2 (ja) | 2004-05-26 | 2004-05-26 | レーザ加工方法および装置 |
Publications (2)
Publication Number | Publication Date |
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JP2007253156A JP2007253156A (ja) | 2007-10-04 |
JP4631044B2 true JP4631044B2 (ja) | 2011-02-16 |
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JP2004156768A Expired - Lifetime JP4631044B2 (ja) | 2004-05-26 | 2004-05-26 | レーザ加工方法および装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20080314883A1 (ja) |
JP (1) | JP4631044B2 (ja) |
WO (1) | WO2005115676A1 (ja) |
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US20080314883A1 (en) | 2008-12-25 |
WO2005115676A1 (ja) | 2005-12-08 |
JP2007253156A (ja) | 2007-10-04 |
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