JP4597108B2 - 窒化物半導体発光素子 - Google Patents
窒化物半導体発光素子 Download PDFInfo
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- JP4597108B2 JP4597108B2 JP2006272045A JP2006272045A JP4597108B2 JP 4597108 B2 JP4597108 B2 JP 4597108B2 JP 2006272045 A JP2006272045 A JP 2006272045A JP 2006272045 A JP2006272045 A JP 2006272045A JP 4597108 B2 JP4597108 B2 JP 4597108B2
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- nitride semiconductor
- layer
- light emitting
- multilayer film
- emitting device
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- 239000004065 semiconductor Substances 0.000 title claims description 131
- 150000004767 nitrides Chemical class 0.000 title claims description 127
- 230000004888 barrier function Effects 0.000 claims description 81
- 239000000203 mixture Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 216
- 239000010408 film Substances 0.000 description 32
- 238000005215 recombination Methods 0.000 description 9
- 230000006798 recombination Effects 0.000 description 9
- 230000007423 decrease Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
Description
103 n型窒化物半導体層
105a,105b,105c,105d 量子井戸層
110 量子障壁層
112,113,114,115 多層膜量子障壁層
120,140,150 活性層
130 p型窒化物半導体層
Claims (19)
- 基板上に順次に形成されたn型窒化物半導体層、活性層及びp型窒化物半導体層を含み、
前記活性層は多数の量子障壁層と量子井戸層を具備する多重量子井戸構造から成り、前記量子障壁層のうち一部量子障壁層はバンドギャップ変調された多層膜から成り、
前記多層膜は、前記量子井戸層の間に介在された量子障壁層のうち前記n型窒化物半導体層に隣接した1または2個の量子障壁層位置のみに形成され、
前記量子障壁層は、隣接した量子井戸層よりも全領域においてバンドギャップエネルギーが大きく、
前記多数の量子障壁層は、前記バンドギャップ変調された多層膜構造ではない量子障壁層を1つ以上具備することを特徴とする窒化物半導体発光素子。 - 前記多層膜は、InxAlyGa(1−x−y)N(0≦x≦1、0≦y≦1、0≦x+y≦1)から成ることを特徴とする請求項1に記載の窒化物半導体発光素子。
- 前記多層膜の少なくとも一部は、n型不純物でドーピングされることを特徴とする請求項1に記載の窒化物半導体発光素子。
- 前記多層膜を構成する各層のドーピング濃度は、互いに異なることを特徴とする請求項1に記載の窒化物半導体発光素子。
- 前記多層膜を構成する各層の厚さは、0.2乃至5nmであることを特徴とする請求項1に記載の窒化物半導体発光素子。
- 前記多層膜は、バンドギャップが互いに異なる2層が繰り返され積層された構造を有することを特徴とする請求項1に記載の窒化物半導体発光素子。
- 互いに異なるバンドギャップを有する前記2層は、互いに異なる組成を有することを特徴とする請求項6に記載の窒化物半導体発光素子。
- 前記多層膜は、第1バンドギャップを有するInxAlyGa(1−x−y)N(0≦x≦1、0≦y≦1、0≦x+y≦1)から成る第1窒化物半導体層と、前記第1バンドギャップより小さい第2バンドギャップを有するInmAlnGa1−m−nN(0≦n≦1、0≦m≦1、0≦m+n≦1)から成る第2窒化物半導体層が互いに交代で積層された構造を有することを特徴とする請求項6に記載の窒化物半導体発光素子。
- 前記多層膜は、バンドギャップが互いに異なるInxGa1−xN層(0≦x<1)とInmGa1−mN層(0<m≦1、x<m)が交代で繰り返され積層された構造を有することを特徴とする請求項8に記載の窒化物半導体発光素子。
- 前記第1窒化物半導体層及び第2窒化物半導体層のうち少なくとも一つの組成が変わることを特徴とする請求項8に記載の窒化物半導体発光素子。
- 前記第2窒化物半導体層は、InGaNから成り、前記p型窒化物半導体層に近いほど前記第2窒化物半導体層のIn組成が大きくなることを特徴とする請求項10に記載の窒化物半導体発光素子。
- 前記第2窒化物半導体層は、InGaNから成り、前記p型窒化物半導体層に近いほど前記第2窒化物半導体層のIn組成が小さくなることを特徴とする請求項10に記載の窒化物半導体発光素子。
- 前記多層膜は、バンドギャップが互いに異なる2層以上が一つのグループを形成し、該グループが2回以上繰り返され積層された構造を有することを特徴とする請求項1に記載の窒化物半導体発光素子。
- 前記各グループのドーピング濃度は、互いに異なることを特徴とする請求項13に記載の窒化物半導体発光素子。
- 前記各グループのバンドギャップ変調は、互いに異なることを特徴とする請求項13に記載の窒化物半導体発光素子。
- 前記多層膜は、第1バンドギャップを有する第1窒化物半導体層、前記第1バンドギャップより小さい第2バンドギャップを有する第2窒化物半導体層、及び前記第2バンドギャップより小さいバンドギャップを有する第3窒化物半導体層が一つのグループを成し、該グループが2回以上繰り返して積層された構造を有することを特徴とする請求項13に記載の窒化物半導体発光素子。
- 2個の量子障壁層がバンドギャップ変調された多層膜から成り、
多層膜から成る前記2個の量子障壁層は互いに同一の多層膜構成を有することを特徴とする請求項1に記載の窒化物半導体発光素子。 - 2個の量子障壁層がバンドギャップ変調された多層膜から成り、
多層膜から成る前記2個の量子障壁層は互いに異なる多層膜構成を有することを特徴とする請求項1に記載の窒化物半導体発光素子。 - 多層膜から成る前記2個の量子障壁層は、互いに異なる多層膜組成を有するか互いに異なるようバンドギャップ変調されることを特徴とする請求項18に記載の窒化物半導体発光素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2005-0097623 | 2005-10-17 | ||
KR1020050097623A KR100703096B1 (ko) | 2005-10-17 | 2005-10-17 | 질화물 반도체 발광 소자 |
Publications (3)
Publication Number | Publication Date |
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JP2007116147A JP2007116147A (ja) | 2007-05-10 |
JP4597108B2 true JP4597108B2 (ja) | 2010-12-15 |
JP4597108B6 JP4597108B6 (ja) | 2011-02-23 |
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Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002368268A (ja) * | 2001-06-07 | 2002-12-20 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002368268A (ja) * | 2001-06-07 | 2002-12-20 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
Also Published As
Publication number | Publication date |
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US20070085097A1 (en) | 2007-04-19 |
US7829882B2 (en) | 2010-11-09 |
US7902544B2 (en) | 2011-03-08 |
US20100230657A1 (en) | 2010-09-16 |
JP2007116147A (ja) | 2007-05-10 |
KR100703096B1 (ko) | 2007-04-06 |
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