JP4550589B2 - ガリウムおよび/またはアルミニウムの膜への取り込みを促進するi−iii−vi化合物の薄膜の製造方法 - Google Patents
ガリウムおよび/またはアルミニウムの膜への取り込みを促進するi−iii−vi化合物の薄膜の製造方法 Download PDFInfo
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- JP4550589B2 JP4550589B2 JP2004564303A JP2004564303A JP4550589B2 JP 4550589 B2 JP4550589 B2 JP 4550589B2 JP 2004564303 A JP2004564303 A JP 2004564303A JP 2004564303 A JP2004564303 A JP 2004564303A JP 4550589 B2 JP4550589 B2 JP 4550589B2
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- gallium
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- 229910052733 gallium Inorganic materials 0.000 title claims description 24
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title claims description 20
- 239000010409 thin film Substances 0.000 title claims description 19
- 150000001875 compounds Chemical class 0.000 title claims description 15
- 229910052782 aluminium Inorganic materials 0.000 title claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims description 8
- 238000010348 incorporation Methods 0.000 title claims description 8
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000010408 film Substances 0.000 title description 19
- 239000004094 surface-active agent Substances 0.000 claims description 24
- 239000011669 selenium Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 7
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 claims description 6
- 239000011734 sodium Substances 0.000 claims description 6
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052711 selenium Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000001530 fumaric acid Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000011976 maleic acid Substances 0.000 claims description 4
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 3
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 claims description 3
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 3
- DLDJFQGPPSQZKI-UHFFFAOYSA-N but-2-yne-1,4-diol Chemical compound OCC#CCO DLDJFQGPPSQZKI-UHFFFAOYSA-N 0.000 claims description 3
- LDHQCZJRKDOVOX-NSCUHMNNSA-N crotonic acid Chemical compound C\C=C\C(O)=O LDHQCZJRKDOVOX-NSCUHMNNSA-N 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 3
- 229910052700 potassium Inorganic materials 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 229910021476 group 6 element Inorganic materials 0.000 claims 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 1
- 230000000737 periodic effect Effects 0.000 claims 1
- 229910052717 sulfur Inorganic materials 0.000 claims 1
- 239000011593 sulfur Substances 0.000 claims 1
- 239000002243 precursor Substances 0.000 description 21
- 239000000203 mixture Substances 0.000 description 10
- 239000012528 membrane Substances 0.000 description 9
- 239000002244 precipitate Substances 0.000 description 9
- 238000000151 deposition Methods 0.000 description 7
- 238000004070 electrodeposition Methods 0.000 description 7
- 239000002253 acid Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 239000000654 additive Substances 0.000 description 5
- 238000010349 cathodic reaction Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000005868 electrolysis reaction Methods 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000007853 buffer solution Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 2
- IWZKICVEHNUQTL-UHFFFAOYSA-M potassium hydrogen phthalate Chemical compound [K+].OC(=O)C1=CC=CC=C1C([O-])=O IWZKICVEHNUQTL-UHFFFAOYSA-M 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000001384 succinic acid Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- HFVMEOPYDLEHBR-UHFFFAOYSA-N (2-fluorophenyl)-phenylmethanol Chemical compound C=1C=CC=C(F)C=1C(O)C1=CC=CC=C1 HFVMEOPYDLEHBR-UHFFFAOYSA-N 0.000 description 1
- DOBUSJIVSSJEDA-UHFFFAOYSA-L 1,3-dioxa-2$l^{6}-thia-4-mercuracyclobutane 2,2-dioxide Chemical compound [Hg+2].[O-]S([O-])(=O)=O DOBUSJIVSSJEDA-UHFFFAOYSA-L 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 238000000975 co-precipitation Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 239000002659 electrodeposit Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 150000002258 gallium Chemical class 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000002471 indium Chemical class 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 229910000370 mercury sulfate Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- JPJALAQPGMAKDF-UHFFFAOYSA-N selenium dioxide Chemical compound O=[Se]=O JPJALAQPGMAKDF-UHFFFAOYSA-N 0.000 description 1
- 125000003748 selenium group Chemical group *[Se]* 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D9/00—Electrolytic coating other than with metals
- C25D9/04—Electrolytic coating other than with metals with inorganic materials
- C25D9/08—Electrolytic coating other than with metals with inorganic materials by cathodic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Description
−高い均質性を有する広い領域の処理が可能であること;
−実施が容易であること;
−設備および原材料のコストが低いこと(特別な成形操作がなく、材料の利用度のレベルが高い);および
−基体上での析出物の局所的な性質により、可能な析出物の形がきわめて多様であること。
−元素IはCuに対応し、
−元素IIIはIn、ならびにGaおよび/またはAlに対応し、
−元素VIはSeおよび/またはSに対応する
を以下では省略形CIGSで示す。
−浴中に溶解させた少なくとも1種の元素III、および浴中に浸した少なくとも2つの電極を備えた電解浴を提供するステップと、
−一方の電極の表面でI−III−VIyの薄膜の形成を開始するために、2つの電極間に電位差を印加するステップとを含む方法を提案する。
−硫酸水銀参照電極REF
を含む3つの電極An、CaおよびREFは、浴Bに浸される。
−2−ブチン−1,4−ジオール;
−コハク酸;
−フマル酸;および
−マレイン酸。
前駆体元素および界面活性剤CH3(CH2)11OSO3Naの濃度が下記である酸浴から、典型的な析出物を生成させた。
[In2(SO4)3]=2.5×10-3M
[Ga2(SO4)3]=2.5×10-3M
[H2SeO3]=7.5×10-3M
[CH3(CH2)11OSO3Na]=20×10-3M
固定電位、すなわち電極REFに対して−1.1Vでの陰極反応によって前駆体を析出させた。電流密度は−5mA/cm2であった。
前駆体元素および界面活性剤HO−CH2−C≡C−CH2−OHの濃度が下記である酸浴から、典型的な析出物を生成させた。
[In2(SO4)3]=2.5×10-3M
[Ga2(SO4)3]=2.5×10-3M
[H2SeO3]=7.5×10-3M
[HO−CH2−C≡C−CH2−OH]=20×10-3M
電極REFに対して−1.1Vに設定された電位での陰極反応によって前駆体を析出させた。電流密度は−5mA/cm2であった。
前駆体元素および界面活性剤HO2C−CH=CH−CO2Hの濃度が下記である酸浴から、典型的な析出物を生成させた。
[In2(SO4)3]=2.5×10-3M
[Ga2(SO4)3]=2.5×10-3M
[H2SeO3]=7.5×10-3M
[HO2C−CH=CH−CO2H]=20×10-3M
電極REFに対して−1.1Vに設定された電位での陰極反応によって前駆体を析出させた。電流密度は−5mA/cm2であった。
前駆体元素および界面活性剤HO2−CH2−CH2−CO2Hの濃度が下記である酸浴から、典型的な析出物を生成させた。
[In2(SO4)3]=2.5×10-3M
[Ga2(SO4)3]=2.5×10-3M
[H2SeO3]=7.5×10-3M
[HO2−CH2−CH2−CO2H]=20×10-3M
電極REFに対して−1.1Vに設定された電位での陰極反応によって前駆体を析出させた。電流密度は−5mA/cm2であった。
前駆体元素および界面活性剤HO2−CH2−CH2−CO2Hの濃度が下記である酸浴から、典型的な析出物を生成させた。
[In2(SO4)3]=2.5×10-3M
[Ga2(SO4)3]=2.5×10-3M
[H2SeO3]=7.5×10-3M
[HO2−CH−CH−CO2H]=20×10-3M
電極REFに対して−1.1Vに設定された電位での陰極反応によって前駆体を析出させた。電流密度は−5mA/cm2であった。
Claims (2)
- 浴中に溶解させた周期率表の第I族、第III族と第VI族の各元素、並びに浴中に浸した少なくとも2つの電極を備えた電解浴を提供するステップと、一方の電極の表面でI−III−VI2化合物の薄膜の形成を開始するために2つの電極間に電位差を印加するステップと、を含む電気化学によって薄膜の形のI−III−VI2化合物を製造する方法であって、
前記第I族の元素が銅であり、前記第III族の元素がインジウムと、ガリウムおよび/またはアルミニウムとであり、前記第VI族の元素が硫黄および/またはセレンであり、
前記電解浴がガリウムおよび/またはアルミニウムの前記薄膜への取り込みを促進するために少なくとも1種の界面活性剤化合物をさらに含み、
前記界面活性剤化合物が、ドデシル硫酸ナトリウム、2−ブチン−1,4−ジオール、マレイン酸、コハク酸、フマル酸、クロトン酸、及び、化学式CH 3 (CH 2 ) n O−SO 3 −X(ただし、nは5を超えるか、または5に等しく、XはH、Na、LiまたはKの原子種である)を有する化合物の群から選ばれることを特徴とする方法。 - 前記電解浴中の前記界面活性剤の濃度が、前記電解浴中のガリウムおよび/またはアルミニウムの濃度と同じ大きさであることを特徴とする請求項1に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0216711A FR2849532B1 (fr) | 2002-12-26 | 2002-12-26 | Procede de fabrication d'un compose i-iii-vi2 en couches minces, favorisant l'incorporation d'elements iii |
PCT/FR2003/003887 WO2004061924A1 (fr) | 2002-12-26 | 2003-12-23 | Procede de fabrication d’un compose i-iii-vi en couches minces, favorisant l’incorporation d’elements iii dans la couche |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006512764A JP2006512764A (ja) | 2006-04-13 |
JP4550589B2 true JP4550589B2 (ja) | 2010-09-22 |
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JP2004564303A Expired - Fee Related JP4550589B2 (ja) | 2002-12-26 | 2003-12-23 | ガリウムおよび/またはアルミニウムの膜への取り込みを促進するi−iii−vi化合物の薄膜の製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7776203B2 (ja) |
EP (1) | EP1576660B1 (ja) |
JP (1) | JP4550589B2 (ja) |
AU (1) | AU2003303659B2 (ja) |
CA (1) | CA2511894C (ja) |
FR (1) | FR2849532B1 (ja) |
WO (1) | WO2004061924A1 (ja) |
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FR2886460B1 (fr) | 2005-05-25 | 2007-08-24 | Electricite De France | Sulfurisation et selenisation de couches de cigs electrodepose par recuit thermique |
JP4330168B2 (ja) | 2005-09-06 | 2009-09-16 | キヤノン株式会社 | モールド、インプリント方法、及びチップの製造方法 |
US7507321B2 (en) * | 2006-01-06 | 2009-03-24 | Solopower, Inc. | Efficient gallium thin film electroplating methods and chemistries |
US7892413B2 (en) * | 2006-09-27 | 2011-02-22 | Solopower, Inc. | Electroplating methods and chemistries for deposition of copper-indium-gallium containing thin films |
US20100139557A1 (en) * | 2006-10-13 | 2010-06-10 | Solopower, Inc. | Reactor to form solar cell absorbers in roll-to-roll fashion |
US20090183675A1 (en) * | 2006-10-13 | 2009-07-23 | Mustafa Pinarbasi | Reactor to form solar cell absorbers |
US20080175993A1 (en) * | 2006-10-13 | 2008-07-24 | Jalal Ashjaee | Reel-to-reel reaction of a precursor film to form solar cell absorber |
US8425753B2 (en) | 2008-05-19 | 2013-04-23 | Solopower, Inc. | Electroplating methods and chemistries for deposition of copper-indium-gallium containing thin films |
US20100213073A1 (en) * | 2009-02-23 | 2010-08-26 | International Business Machines Corporation | Bath for electroplating a i-iii-vi compound, use thereof and structures containing same |
US20110023750A1 (en) * | 2009-07-28 | 2011-02-03 | Kuan-Che Wang | Ink composition for forming absorbers of thin film cells and producing method thereof |
FR2951022B1 (fr) * | 2009-10-07 | 2012-07-27 | Nexcis | Fabrication de couches minces a proprietes photovoltaiques, a base d'un alliage de type i-iii-vi2, par electro-depots successifs et post-traitement thermique. |
US20110108115A1 (en) * | 2009-11-11 | 2011-05-12 | International Business Machines Corporation | Forming a Photovoltaic Device |
US8366967B2 (en) * | 2010-02-22 | 2013-02-05 | Inpria Corporation | Metal chalcogenide aqueous precursors and processes to form metal chalcogenide films |
FR2957365B1 (fr) * | 2010-03-11 | 2012-04-27 | Electricite De France | Procede de preparation d'une couche mince d'absorbeur pour cellules photovoltaiques |
US8304272B2 (en) | 2010-07-02 | 2012-11-06 | International Business Machines Corporation | Germanium photodetector |
US8545689B2 (en) | 2010-09-02 | 2013-10-01 | International Business Machines Corporation | Gallium electrodeposition processes and chemistries |
US20120055612A1 (en) | 2010-09-02 | 2012-03-08 | International Business Machines Corporation | Electrodeposition methods of gallium and gallium alloy films and related photovoltaic structures |
FR2966282B1 (fr) | 2010-10-18 | 2013-02-15 | Nexcis | Controle de la stoechiometrie de couches i-iii-vi pour des applications photovoltaiques a partir de conditions d'electrolyse perfectionnees. |
EP2469580A1 (en) * | 2010-12-27 | 2012-06-27 | Nexcis | Improved interface between a I-III-VI2 material layer and a molybdenum substrate |
ES2402313B1 (es) | 2011-09-30 | 2014-03-04 | Universitat Jaume I De Castellón | Tintas para la obtención "in situ" de calcógenos y/o calcogenuros que dan lugar a capas de semiconductores, su obtención y modo de empleo |
CN209155878U (zh) | 2015-08-10 | 2019-07-26 | 生命科技公司 | 样本载体和利用其的*** |
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JPS61237476A (ja) * | 1985-04-12 | 1986-10-22 | シーメンス・ソラー・インダストリエス・リミテッド・パートナーシップ | 化合物半導体の製造方法 |
DE3878783T2 (de) * | 1987-08-21 | 1993-07-22 | Engelhard Ltd | Bad fuer das elektroplattieren einer gold-kupfer-zink-legierung. |
DE4103291A1 (de) * | 1990-09-22 | 1992-04-02 | Battelle Institut E V | Verfahren zur herstellung einer absorberschicht fuer solarzellen mit hilfe galvanischer abscheidetechnik |
JP3347457B2 (ja) * | 1994-02-24 | 2002-11-20 | 日本電解株式会社 | 非シアン系銅−亜鉛電気めっき浴、これを用いたプリント配線板用銅箔の表面処理方法及びプリント配線板用銅箔 |
JP3433291B2 (ja) * | 1999-09-27 | 2003-08-04 | 石原薬品株式会社 | スズ−銅含有合金メッキ浴、スズ−銅含有合金メッキ方法及びスズ−銅含有合金メッキ皮膜が形成された物品 |
WO2001078154A2 (en) * | 2000-04-10 | 2001-10-18 | Davis, Joseph & Negley | Preparation of cigs-based solar cells using a buffered electrodeposition bath |
WO2002077322A1 (en) * | 2001-03-22 | 2002-10-03 | Midwest Research Institute | Electroless deposition of cu-in-ga-se film |
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2002
- 2002-12-26 FR FR0216711A patent/FR2849532B1/fr not_active Expired - Lifetime
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2003
- 2003-12-23 AU AU2003303659A patent/AU2003303659B2/en not_active Ceased
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- 2003-12-23 JP JP2004564303A patent/JP4550589B2/ja not_active Expired - Fee Related
- 2003-12-23 CA CA2511894A patent/CA2511894C/fr not_active Expired - Fee Related
- 2003-12-23 EP EP03814487.9A patent/EP1576660B1/fr not_active Expired - Lifetime
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Also Published As
Publication number | Publication date |
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AU2003303659B2 (en) | 2009-10-01 |
FR2849532B1 (fr) | 2005-08-19 |
WO2004061924A8 (fr) | 2005-07-07 |
EP1576660A1 (fr) | 2005-09-21 |
US20060151331A1 (en) | 2006-07-13 |
CA2511894A1 (fr) | 2004-07-22 |
FR2849532A1 (fr) | 2004-07-02 |
EP1576660B1 (fr) | 2016-04-27 |
CA2511894C (fr) | 2012-05-22 |
WO2004061924A1 (fr) | 2004-07-22 |
AU2003303659A1 (en) | 2004-07-29 |
US7776203B2 (en) | 2010-08-17 |
AU2003303659A8 (en) | 2004-07-29 |
JP2006512764A (ja) | 2006-04-13 |
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