JP4534450B2 - 光メモリ素子の記録方法 - Google Patents
光メモリ素子の記録方法 Download PDFInfo
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- JP4534450B2 JP4534450B2 JP2003306344A JP2003306344A JP4534450B2 JP 4534450 B2 JP4534450 B2 JP 4534450B2 JP 2003306344 A JP2003306344 A JP 2003306344A JP 2003306344 A JP2003306344 A JP 2003306344A JP 4534450 B2 JP4534450 B2 JP 4534450B2
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- fluorescence intensity
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Description
光メモリ素子の作製
光メモリ素子はナノ粒子薄膜を湿式塗布により固体基板上に形成することで作製した。3.5nmの平均粒径を有するCdSeナノ粒子を、粒子濃度が1.0重量%となるようトルエンに分散させ、塗布液を調製した。
光メモリ素子への励起光、及び読み取り光照射は、共焦点レーザースキャン顕微鏡(ライカマイクロシステムズ社製、TCS SP-2)を用いて行った。
記録操作では、光メモリ素子3のCdSeナノ粒子薄膜2の任意に選択した位置に、辺長7μmの正方形の領域に、各々以下の5条件の励起光を照射した。
11nW 44nJ
48nW 49nJ
220nW 43nJ
470nW 47nJ
1370nW 136nJ
読み取り操作
読み取り操作では、記録操作を行う領域を含む辺長60μmの正方形の領域に、照射強度0.6nWで読み取り光の照射を行い、蛍光像すなわち蛍光強度の面内分布を測定した。
Claims (2)
- 励起光の照射により、その蛍光強度が増加する機能を持つ発光性微粒子の集合体を含む光メモリ素子に、該励起光を、記録情報に応じて制御された照射強度で照射し、該励起光が照射された領域内の発光微粒子の集合体の蛍光強度を、該制御された照射強度に対応した飽和値まで、選択的に増加せしめ、該蛍光強度の飽和値を励起光の照射強度が低いほど高くすることにより記録を行うことを特徴とする光メモリ素子の記録方法。
- 前記発光性微粒子の集合体は、各発光性微粒子間の平均粒子間距離が、微粒子直径の10倍以内であることを特徴とする請求項1に記載の光メモリ素子の記録方法。
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JP2003306344A JP4534450B2 (ja) | 2003-08-29 | 2003-08-29 | 光メモリ素子の記録方法 |
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JP2003306344A JP4534450B2 (ja) | 2003-08-29 | 2003-08-29 | 光メモリ素子の記録方法 |
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JP2005077600A JP2005077600A (ja) | 2005-03-24 |
JP4534450B2 true JP4534450B2 (ja) | 2010-09-01 |
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JP2003306344A Expired - Fee Related JP4534450B2 (ja) | 2003-08-29 | 2003-08-29 | 光メモリ素子の記録方法 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5131226A (ja) * | 1974-07-11 | 1976-03-17 | Agfa Gevaert Ag | |
JP2000081682A (ja) * | 1998-07-01 | 2000-03-21 | Mitsubishi Chemicals Corp | 光メモリ素子 |
JP2001318448A (ja) * | 2000-02-28 | 2001-11-16 | Fuji Photo Film Co Ltd | 記録媒体、多値情報記録方法および装置、並びに多値情報再生方法および装置 |
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2003
- 2003-08-29 JP JP2003306344A patent/JP4534450B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5131226A (ja) * | 1974-07-11 | 1976-03-17 | Agfa Gevaert Ag | |
JP2000081682A (ja) * | 1998-07-01 | 2000-03-21 | Mitsubishi Chemicals Corp | 光メモリ素子 |
JP2001318448A (ja) * | 2000-02-28 | 2001-11-16 | Fuji Photo Film Co Ltd | 記録媒体、多値情報記録方法および装置、並びに多値情報再生方法および装置 |
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JP2005077600A (ja) | 2005-03-24 |
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