JP4529041B2 - Circuit board modularization method - Google Patents

Circuit board modularization method Download PDF

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JP4529041B2
JP4529041B2 JP2004276293A JP2004276293A JP4529041B2 JP 4529041 B2 JP4529041 B2 JP 4529041B2 JP 2004276293 A JP2004276293 A JP 2004276293A JP 2004276293 A JP2004276293 A JP 2004276293A JP 4529041 B2 JP4529041 B2 JP 4529041B2
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circuit board
conductive adhesive
wiring pattern
wire bonding
gold
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JP2006093365A (en
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正之 金近
孝彦 野崎
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Stanley Electric Co Ltd
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Stanley Electric Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector

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  • Die Bonding (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of modularizing a circuit board capable of making both of wire bonding property and mold resin adhesion compatible. <P>SOLUTION: In this method of modularizing the circuit board, a component to be mounted on the circuit board having a gold-plated wiring pattern is subjected to die bonding, the electrically conductive adhesive for the die bonding is cured and wire bonding is carried out, and then the circuit board and the component are sealed and covered with a molding resin. Before the wire bonding, the electrically conductive adhesive is temporarily cured at such a relatively low temperature that nickel hydroxide does not deposit on the gold plating, and after the wire bonding, the electrically conductive adhesive is actually cured at such a relatively high temperature that nickel hydroxide deposits on the gold plating. <P>COPYRIGHT: (C)2006,JPO&amp;NCIPI

Description

本発明は、金メッキされた回路基板を樹脂モールドによりモジュール化するための方法に関するものである。   The present invention relates to a method for modularizing a gold-plated circuit board by a resin mold.

従来、このような回路基板のモジュール化方法は、例えば特許文献１乃至３により開示されており、図６乃至図１０に示すように行なわれる。
尚、回路基板１は、その表面に形成された例えば１８乃至３５μｍ程度の厚さの銅から成る配線パターン１ａが、バリア層としてのニッケル膜を介して、例えば０．５μｍ以下の厚さで薄く金メッキされている。 Conventionally, such a circuit board modularization method is disclosed in, for example, Patent Documents 1 to 3, and is performed as shown in FIGS.
The circuit board 1 has a wiring pattern 1a made of copper with a thickness of, for example, about 18 to 35 μm formed on the surface thereof, and is thin with a thickness of, for example, 0.5 μm or less through a nickel film as a barrier layer. Gold-plated.

まず、図６に示すように、上記回路基板１上の所定位置に、実装すべき部品２を、導電性接着剤３によりダイボンディングする。
続いて、図７に示すように、上記導電性接着剤３を熱硬化させる。これに伴って、上記回路基板１の配線パターン１ａの金メッキされた表面には、水酸化ニッケル１ｂが析出することになる。 First, as shown in FIG. 6, a component 2 to be mounted is die-bonded with a conductive adhesive 3 at a predetermined position on the circuit board 1.
Subsequently, as shown in FIG. 7, the conductive adhesive 3 is thermally cured. As a result, nickel hydroxide 1b is deposited on the gold-plated surface of the wiring pattern 1a of the circuit board 1.

次に、図８に示すように、上述したように配線パターン１ａの金メッキされた表面に析出した水酸化ニッケル１ｂを、アルゴンプラズマを利用したエッチング洗浄によって除去する。これにより、水酸化ニッケル１ｂが除去されて、配線パターンのワイヤボンディング性が向上することになる。
その後、図９に示すように、ダイボンディングされた部品２と回路基板１上の金メッキされた配線パターン１ａとを、ワイヤボンディングにより接続する。 Next, as shown in FIG. 8, the nickel hydroxide 1b deposited on the gold-plated surface of the wiring pattern 1a as described above is removed by etching cleaning using argon plasma. Thereby, the nickel hydroxide 1b is removed, and the wire bonding property of the wiring pattern is improved.
Thereafter, as shown in FIG. 9, the die-bonded component 2 and the gold-plated wiring pattern 1a on the circuit board 1 are connected by wire bonding.

最後に、図１０に示すように、部品２が実装された回路基板１をモールド樹脂４により封止して、モジュール化する。   Finally, as shown in FIG. 10, the circuit board 1 on which the component 2 is mounted is sealed with a mold resin 4 to form a module.

ここで、モールド樹脂４と金との密着性が低いので、配線パターンの表面に施された金メッキの表面をチオール処理することにより、チオール処理膜を形成して、金のモールド樹脂４に対する密着性を高めることが、特許文献４に開示されている。
特許第２７８３１３３号 特許第２７８３２６０号 特許第３０００８７７号 特願平１０−１８６６７２号 Here, since the adhesion between the mold resin 4 and the gold is low, a thiol-treated film is formed by thiol-treating the surface of the gold plating applied to the surface of the wiring pattern, and the adhesion to the gold mold resin 4 Is disclosed in Patent Document 4.
Japanese Patent No. 2783133 Patent No. 2783260 Patent No. 3000877 Japanese Patent Application No. 10-186672

しかしながら、このような回路基板モジュール化方法においては、部品の実装後に、水酸化ニッケル除去のためのプラズマ処理が行なわれることから、部品がＧａＡｓ等を使用した半導体素子や静電気に弱い素子の場合には、プラズマ処理によって部品が損傷を受けることがあった。
また、配線パターンの表面に施された金メッキをチオール処理する場合、このチオール処理のための化学処理工程が必要になると共に、上記プラズマ処理によってチオール処理膜もエッチングにより除去されてしまう。
従って、プラズマ処理によるワイヤボンディング性とチオール処理による配線パターンの金メッキされた表面とモールド樹脂４との密着性を両立させることは困難であった。 However, in such a circuit board modularization method, since the plasma treatment for removing nickel hydroxide is performed after the component is mounted, the component is a semiconductor element using GaAs or the like or an element that is sensitive to static electricity. In some cases, the parts were damaged by the plasma treatment.
Further, when gold plating applied to the surface of the wiring pattern is subjected to thiol treatment, a chemical treatment step for the thiol treatment is required, and the thiol treatment film is also removed by etching due to the plasma treatment.
Therefore, it is difficult to achieve both the wire bonding property by the plasma treatment and the adhesion between the gold-plated surface of the wiring pattern by the thiol treatment and the mold resin 4.

本発明は、以上の点から、ワイヤボンディング性及びモールド樹脂密着性の双方を両立させ得るようにした回路基板モジュール化方法を提供することを目的としている。   In view of the above, an object of the present invention is to provide a circuit board modularization method that can achieve both wire bonding and mold resin adhesion.

上記目的は、本発明によれば、金メッキされた配線パターンを有する回路基板に対して、実装すべき部品を導電性接着剤によりダイボンディングし、この導電性接着剤を硬化させて、当該部品と配線パターンとの間にワイヤボンディングを行なった後、回路基板及び部品を覆うようにモールド樹脂により封止する、回路基板モジュール化方法において、上記導電性接着剤が、ワイヤボンディング前に、配線パターンの金メッキ上に水酸化ニッケルが析出しない程度の比較的低い５０度程度で１時間熱硬化されることにより、仮硬化され、さらに上記導電性接着剤が、ワイヤボンディング後に、配線パターンの金メッキ上に水酸化ニッケルが析出する程度の比較的高い温度で熱硬化されることにより、本硬化され、上記モールド樹脂が、上記導電性接着剤の本硬化の際に金メッキ上に析出した水酸化ニッケルを介して配線パターンの金メッキと密着される
ことを特徴とする、回路基板モジュール化方法により達成される。 According to the present invention, according to the present invention, a component to be mounted is die-bonded with a conductive adhesive on a circuit board having a gold-plated wiring pattern, the conductive adhesive is cured, and the component and In the circuit board modularization method in which wire bonding is performed between the wiring pattern and a mold resin so as to cover the circuit board and the component. In the method for modularizing a circuit board, the conductive adhesive is applied to the wiring pattern before wire bonding. by nickel hydroxide on the gold plating is cured under heating for 1 h at a relatively low 50 degrees so as not to precipitate, is temporarily cured, further the conductive adhesive, after wire bonding, water on the gold plating of the wiring pattern By being thermally cured at a relatively high temperature at which nickel oxide is deposited, the main resin is cured and the mold resin is introduced into the conductive resin. Characterized in that it is in close contact with the gold plating of the wiring pattern through the nickel hydroxide deposited on the gold during the curing of sexual adhesive is accomplished by the circuit board module method.

本発明による回路基板モジュール化方法は、好ましくは、上記導電性接着剤の本硬化が、１８０℃程度での熱硬化により行なわれる。   In the circuit board modularization method according to the present invention, the main curing of the conductive adhesive is preferably performed by thermal curing at about 180 ° C.

上記構成によれば、回路基板に部品がダイボンディングされた後、ダイボンディングに使用された導電性接着剤が、当該部品のワイヤボンディング前に比較的低い温度、例えば５０℃程度で仮硬化されるので、この仮硬化により当該部品が回路基板に対して仮固定されると共に、配線パターン上の金メッキに水酸化ニッケルが析出しない。従って、当該部品と配線パターンとの間にワイヤボンディングを行なう際に、ワイヤボンディングは、配線パターンの表面の金メッキ上に水酸化ニッケルが析出していないことから、確実に行なわれることになり、ワイヤボンディング性が確保され得ることになる。   According to the above configuration, after the component is die-bonded to the circuit board, the conductive adhesive used for the die bonding is temporarily cured at a relatively low temperature, for example, about 50 ° C. before wire bonding of the component. Therefore, this temporary hardening temporarily fixes the component to the circuit board and nickel hydroxide does not deposit on the gold plating on the wiring pattern. Accordingly, when wire bonding is performed between the component and the wiring pattern, the wire bonding is surely performed because nickel hydroxide is not deposited on the gold plating on the surface of the wiring pattern. Bondability can be ensured.

また、ダイボンディングに使用された導電性接着剤が、当該部品のワイヤボンディング後に比較的高い温度、例えば１８０℃程度で本硬化されるので、この本硬化により当該部品が回路基板に対して確実に固定されると共に、配線パターン上の金メッキに水酸化ニッケルが析出することとなる。従って、その後のモールド樹脂による封止の際に、モールド樹脂が、配線パターン上の金メッキに対して、この析出した水酸化ニッケルを介して確実に密着することになり、モールド樹脂の密着性が確保され得ることになる。   In addition, since the conductive adhesive used for die bonding is fully cured at a relatively high temperature, for example, about 180 ° C. after wire bonding of the component, the component is surely secured to the circuit board by this curing. At the same time, nickel hydroxide is deposited on the gold plating on the wiring pattern. Therefore, at the time of sealing with the mold resin thereafter, the mold resin is surely adhered to the gold plating on the wiring pattern through the deposited nickel hydroxide, and the adhesion of the mold resin is ensured. Will be able to.

このようにして、本発明によれば、ワイヤボンディング前には、ダイボンディングに使用された導電性接着剤が比較的低温で仮硬化されることから、配線パターンの金メッキ上には水酸化ニッケルが析出しないので、ワイヤボンディング性が確保されると共に、ワイヤボンディング後に、上記導電性接着剤が比較的高温で本硬化されることから、当該部品が確実に回路基板に対して固定され、また配線パターンの金メッキ上には水酸化ニッケルが析出する。そして、回路基板及び部品をモールド樹脂により封止する際には、モールド樹脂が、配線パターンの金メッキに対して、その上に上記導電性接着剤の比較的高温での本硬化の際に析出した水酸化ニッケルを介して、確実に密着することになって、モールド樹脂の密着性が確保される。   Thus, according to the present invention, before the wire bonding, the conductive adhesive used for die bonding is temporarily cured at a relatively low temperature, so that nickel hydroxide is deposited on the gold plating of the wiring pattern. Since it does not precipitate, wire bondability is ensured, and after the wire bonding, the conductive adhesive is permanently cured at a relatively high temperature, so that the component is securely fixed to the circuit board, and the wiring pattern Nickel hydroxide is deposited on the gold plating. When the circuit board and the component are sealed with the mold resin, the mold resin is deposited on the gold plating of the wiring pattern during the main curing of the conductive adhesive at a relatively high temperature. The adhesiveness of the mold resin is ensured by reliably contacting with the nickel hydroxide.

従って、上述したワイヤボンディング性及びモールド樹脂の密着性の双方が確実に得られることになると共に、水酸化ニッケル除去のためのプラズマ処理が不要であることから、部品が損傷を受けるようなこともない。
さらに、上記プラズマ処理や金メッキ表面のチオール処理も不要であることから、簡単な構成により、設備コストを抑制することができる。 Therefore, both the above-described wire bonding property and mold resin adhesion can be surely obtained, and since the plasma treatment for removing nickel hydroxide is unnecessary, the parts may be damaged. Absent.
Furthermore, since the plasma treatment and the thiol treatment on the gold plating surface are unnecessary, the equipment cost can be suppressed with a simple configuration.

以下、この発明の好適な実施形態を図１乃至図５を参照しながら、詳細に説明する。
尚、以下に述べる実施形態は、本発明の好適な具体例であるから、技術的に好ましい種々の限定が付されているが、本発明の範囲は、以下の説明において特に本発明を限定する旨の記載がない限り、これらの態様に限られるものではない。 Hereinafter, preferred embodiments of the present invention will be described in detail with reference to FIGS.
The embodiments described below are preferable specific examples of the present invention, and thus various technically preferable limitations are given. However, the scope of the present invention particularly limits the present invention in the following description. As long as there is no description of the effect, it is not restricted to these aspects.

図１乃至図５は、本発明を適用した回路基板モジュール化方法の一実施形態の工程を順次に示している。 ここで、回路基板１０は、図６に示した従来の回路基板モジュール化方法と同様に、その表面に形成された例えば１８乃至３５μｍ程度の厚さの銅から成る配線パターン１１が、バリア層としてのニッケル膜を介して、例えば０．５μｍ以下の厚さで薄く金メッキされている。   1 to 5 sequentially show the steps of an embodiment of a circuit board modularization method to which the present invention is applied. Here, as in the conventional circuit board modularization method shown in FIG. 6, the circuit board 10 has a wiring pattern 11 made of copper having a thickness of, for example, about 18 to 35 μm formed as a barrier layer. For example, the gold film is thinly plated with a thickness of 0.5 μm or less through the nickel film.

まず、図１に示すように、上記回路基板１０上の所定位置に、実装すべき部品１２を、導電性接着剤１３によりダイボンディングする。
続いて、図２に示すように、上記導電性接着剤１３を第一の熱硬化により仮硬化させる。その際、上記第一の熱硬化は、上記回路基板１０の配線パターン１１の金メッキ上に、水酸化ニッケルが析出しない程度の比較的低い温度、例えば５０℃程度で１時間行なわれる。 First, as shown in FIG. 1, a component 12 to be mounted is die-bonded with a conductive adhesive 13 at a predetermined position on the circuit board 10.
Subsequently, as shown in FIG. 2, the conductive adhesive 13 is temporarily cured by first thermal curing. At this time, the first thermosetting is performed for 1 hour at a relatively low temperature, such as about 50 ° C., at which nickel hydroxide does not precipitate on the gold plating of the wiring pattern 11 of the circuit board 10.

次に、図３に示すように、ダイボンディングされた部品１２と回路基板１０上の金メッキされた配線パターン１１とを、ワイヤボンディングにより接続する。
このとき、配線パターン１１上には水酸化ニッケルが析出していないので、ワイヤボンディングが良好に行なわれ得ることになる。
そして、図４に示すように、上記導電性接着剤１３を第二の熱硬化により仮硬化させる。その際、上記第二の熱硬化は、上記回路基板１０の配線パターン１１の金メッキ上に、水酸化ニッケルが析出する程度の比較的高い温度、例えば１８０℃程度で１時間行なわれる。これにより、配線パターン１１の金メッキ上には、水酸化ニッケル１１ａが析出することになる。 Next, as shown in FIG. 3, the die-bonded component 12 and the gold-plated wiring pattern 11 on the circuit board 10 are connected by wire bonding.
At this time, since nickel hydroxide is not deposited on the wiring pattern 11, wire bonding can be performed satisfactorily.
And as shown in FIG. 4, the said conductive adhesive 13 is temporarily hardened by 2nd thermosetting. At this time, the second thermosetting is performed for 1 hour at a relatively high temperature, such as about 180 ° C., at which nickel hydroxide is deposited on the gold plating of the wiring pattern 11 of the circuit board 10. As a result, nickel hydroxide 11 a is deposited on the gold plating of the wiring pattern 11.

最後に、図５に示すように、部品１２が実装された回路基板１０を、モールド樹脂１４により封止して、モジュール化する。
その際、配線パターン１０の金メッキ上には、上記第二の熱硬化にて水酸化ニッケル１１ａが析出しているので、モールド樹脂１４は、この水酸化ニッケル１１ａを介して、配線パターン１０の金メッキされた表面に確実に密着することになる。 Finally, as shown in FIG. 5, the circuit board 10 on which the component 12 is mounted is sealed with a mold resin 14 to form a module.
At this time, since nickel hydroxide 11a is deposited on the gold plating of the wiring pattern 10 by the second thermosetting, the mold resin 14 is plated with gold on the wiring pattern 10 via the nickel hydroxide 11a. It adheres securely to the finished surface.

ここで、水酸化ニッケル１１ａによるモールド樹脂１４の密着性に関する実験例を説明する。
まず金メッキ基板を１８０℃にて１時間加熱した後、この金メッキ基板上に、エポキシ接着剤により直径４ｍｍ，高さ５ｍｍの樹脂モールドを形成する。そして、この樹脂モールドの金メッキ基板に対する密着強度を測定したところ、４．０１ｋｇ／ｆであった。
また、同じ金メッキ基板を１８０℃にて１時間加熱した後、金メッキ基板表面に付着した汚れを軽く洗浄してから、この金メッキ基板上に、エポキシ接着剤により直径４ｍｍ，高さ５ｍｍの樹脂モールドを形成する。そして、この樹脂モールドの金メッキ基板に対する密着強度を測定したところ、５．２７ｋｇ／ｆであった。
これに対して、同じ金メッキ基板を１８０℃にて１時間加熱した後、金メッキ基板表面をＡｒプラズマによるエッチング処理で水酸化ニッケルを除去して金メッキを露出させた後、この金メッキ基板上に、エポキシ接着剤により直径４ｍｍ，高さ５ｍｍの樹脂モールドを形成する。そして、この樹脂モールドの金メッキ基板に対する密着強度を測定したところ、３．３４ｋｇ／ｆであった。
このようにして、金メッキ基板の表面に、水酸化ニッケルが存在する場合には、密着強度が高いことが分かる。 Here, an experimental example regarding the adhesion of the mold resin 14 with the nickel hydroxide 11a will be described.
First, a gold-plated substrate is heated at 180 ° C. for 1 hour, and then a resin mold having a diameter of 4 mm and a height of 5 mm is formed on the gold-plated substrate with an epoxy adhesive. And when the adhesive strength of this resin mold with respect to the gold plating board | substrate was measured, it was 4.01 kg / f.
In addition, after heating the same gold-plated substrate for 1 hour at 180 ° C., the dirt adhering to the gold-plated substrate surface is lightly washed, and then a resin mold having a diameter of 4 mm and a height of 5 mm is formed on the gold-plated substrate with an epoxy adhesive. Form. And when the adhesive strength of this resin mold with respect to the gold plating board | substrate was measured, it was 5.27 kg / f.
In contrast, after the same gold-plated substrate was heated at 180 ° C. for 1 hour, the surface of the gold-plated substrate was etched with Ar plasma to remove nickel hydroxide to expose the gold plating, and then the epoxy was deposited on the gold-plated substrate. A resin mold having a diameter of 4 mm and a height of 5 mm is formed by an adhesive. And when the adhesive strength of this resin mold with respect to the gold plating board | substrate was measured, it was 3.34 kg / f.
Thus, it can be seen that the adhesion strength is high when nickel hydroxide is present on the surface of the gold-plated substrate.

このようにして、本発明による回路基板モジュール化方法によれば、水酸化ニッケルを除去するためのプラズマ処理を行なうことなく、また金メッキ表面のチオール処理を行なうことなく、簡単な構成により、ワイヤボンディング性及びモールド樹脂の密着性の双方を確保することができる。   Thus, according to the method for modularizing a circuit board according to the present invention, wire bonding can be performed with a simple configuration without performing plasma treatment for removing nickel hydroxide and without performing thiol treatment on the gold plating surface. Both the adhesiveness and the adhesiveness of the mold resin can be ensured.

上述した実施形態においては、回路基板１０に単に部品１２を実装する場合について説明したが、部品１２としては、例えば回路基板１０上にダイボンディング，ワイヤボンディングにより実装し、モールド樹脂１４により封止される部品、例えばＩｒｄａやチップＬＥＤ等の各種部品が使用され、本発明によりこれら各種部品をモジュール化することができる。   In the embodiment described above, the case where the component 12 is simply mounted on the circuit board 10 has been described. However, the component 12 is mounted on the circuit board 10 by die bonding or wire bonding and sealed with the mold resin 14, for example. Various parts such as Irda and chip LED are used, and these various parts can be modularized according to the present invention.

本発明による回路基板モジュール化方法の一実施形態における第一の工程を示す概略断面図である。It is a schematic sectional drawing which shows the 1st process in one Embodiment of the circuit board modularization method by this invention. 図１の回路基板モジュール化方法における第二の工程を示す概略断面図である。It is a schematic sectional drawing which shows the 2nd process in the circuit board modularization method of FIG. 図１の回路基板モジュール化方法における第三の工程を示す概略断面図である。It is a schematic sectional drawing which shows the 3rd process in the circuit board modularization method of FIG. 図１の回路基板モジュール化方法における第四の工程を示す概略断面図である。It is a schematic sectional drawing which shows the 4th process in the circuit board modularization method of FIG. 図１の回路基板モジュール化方法における第五の工程を示す概略断面図である。It is a schematic sectional drawing which shows the 5th process in the circuit board modularization method of FIG. 従来の回路基板モジュール化方法の一例における第一の工程を示す概略断面図である。It is a schematic sectional drawing which shows the 1st process in an example of the conventional circuit board modularization method. 図６の回路基板モジュール化方法における第二の工程を示す概略断面図である。It is a schematic sectional drawing which shows the 2nd process in the circuit board modularization method of FIG. 図６の回路基板モジュール化方法における第三の工程を示す概略断面図である。It is a schematic sectional drawing which shows the 3rd process in the circuit board modularization method of FIG. 図６の回路基板モジュール化方法における第四の工程を示す概略断面図である。It is a schematic sectional drawing which shows the 4th process in the circuit board modularization method of FIG. 図６の回路基板モジュール化方法における第五の工程を示す概略断面図である。It is a schematic sectional drawing which shows the 5th process in the circuit board modularization method of FIG.

符号の説明Explanation of symbols

１０ 回路基板
１１ 配線パターン
１２ 部品
１３ 導電性接着剤
１４ モールド樹脂 DESCRIPTION OF SYMBOLS 10 Circuit board 11 Wiring pattern 12 Parts 13 Conductive adhesive 14 Mold resin

Claims (2)

金メッキされた配線パターンを有する回路基板に対して、実装すべき部品を導電性接着剤によりダイボンディングし、この導電性接着剤を硬化させて、当該部品と配線パターンとの間にワイヤボンディングを行なった後、回路基板及び部品を覆うようにモールド樹脂により封止する、回路基板モジュール化方法において、
上記導電性接着剤が、ワイヤボンディング前に、配線パターンの金メッキ上に水酸化ニッケルが析出しない程度の比較的低い５０度程度で１時間熱硬化されることにより、仮硬化され、
さらに上記導電性接着剤が、ワイヤボンディング後に、配線パターンの金メッキ上に水酸化ニッケルが析出する程度の比較的高い温度で熱硬化されることにより、本硬化され、
上記モールド樹脂が、上記導電性接着剤の本硬化の際に金メッキ上に析出した水酸化ニッケルを介して配線パターンの金メッキと密着される
ことを特徴とする、回路基板モジュール化方法。 On a circuit board having a wiring pattern plated with gold, a component to be mounted is die-bonded with a conductive adhesive, the conductive adhesive is cured, and wire bonding is performed between the component and the wiring pattern. Then, in the circuit board modularization method of sealing with a mold resin so as to cover the circuit board and components,
The conductive adhesive, before wire bonding, by being cured for 1 hour heat at a relatively low 50 degrees to the extent that the nickel hydroxide on the gold plating of the wiring pattern does not precipitate, is temporarily cured,
Furthermore, the conductive adhesive is thermally cured at a relatively high temperature such that nickel hydroxide is deposited on the gold plating of the wiring pattern after wire bonding, and is finally cured.
A method for modularizing a circuit board, wherein the mold resin is brought into close contact with gold plating of a wiring pattern through nickel hydroxide deposited on the gold plating during the main curing of the conductive adhesive. 上記導電性接着剤の本硬化が、１８０℃程度での熱硬化により行なわれることを特徴とする、請求項１に記載の回路基板モジュール化方法。 2. The circuit board module forming method according to claim 1 , wherein the main curing of the conductive adhesive is performed by thermal curing at about 180.degree.
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JP5395854B2 (en) * 2011-08-11 2014-01-22 タツタ電線株式会社 Printed wiring board and printed wiring board manufacturing method
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JP2001135675A (en) * 1999-11-02 2001-05-18 Nitto Denko Corp Flexible wiring board
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JP2783133B2 (en) * 1993-09-29 1998-08-06 松下電器産業株式会社 Wire bonding pretreatment method
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JP2004055624A (en) * 2002-07-16 2004-02-19 Murata Mfg Co Ltd Process for producing substrate

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