JP4526823B2 - キャリヤ、キャリヤを製造する方法および電子機器 - Google Patents
キャリヤ、キャリヤを製造する方法および電子機器 Download PDFInfo
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- JP4526823B2 JP4526823B2 JP2003582812A JP2003582812A JP4526823B2 JP 4526823 B2 JP4526823 B2 JP 4526823B2 JP 2003582812 A JP2003582812 A JP 2003582812A JP 2003582812 A JP2003582812 A JP 2003582812A JP 4526823 B2 JP4526823 B2 JP 4526823B2
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- Prior art keywords
- metal layer
- layer
- carrier
- etch mask
- metal
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000010410 layer Substances 0.000 claims description 191
- 229910052751 metal Inorganic materials 0.000 claims description 111
- 239000002184 metal Substances 0.000 claims description 111
- 239000012790 adhesive layer Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 30
- 239000004020 conductor Substances 0.000 claims description 15
- 229910000679 solder Inorganic materials 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 13
- 238000000059 patterning Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- -1 FeCrNi Inorganic materials 0.000 claims description 2
- 229910002555 FeNi Inorganic materials 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 19
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 229910052737 gold Inorganic materials 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 229910052763 palladium Inorganic materials 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 229910017767 Cu—Al Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
- H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
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- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0361—Etched tri-metal structure, i.e. metal layers or metal patterns on both sides of a different central metal layer which is later at least partly etched
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/03—Metal processing
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-
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- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/14—Related to the order of processing steps
- H05K2203/1461—Applying or finishing the circuit pattern after another process, e.g. after filling of vias with conductive paste, after making printed resistors
- H05K2203/1469—Circuit made after mounting or encapsulation of the components
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- H05K2203/14—Related to the order of processing steps
- H05K2203/1476—Same or similar kind of process performed in phases, e.g. coarse patterning followed by fine patterning
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Description
前記キャリヤの前記第1側面上に電気要素を配置し、前記電気要素の接点が前記第1金属層に導電的に接続される工程と、
前記電気要素の周囲にエンベロープを設ける工程とを含む方法に関する。
第1金属層と、中間層と、第2金属層とのスタックを設け、前記第1および第2金属層が導電的に相互接続され、また前記第1金属層が前記第1側面上に位置する工程と、
所望のパターンに応じて前記第1金属層をパターン化する工程とを含んでなる方法に関する。
第1金属層と、中間層と、第2金属層とのスタックを設け、前記第1および第2金属層が導電的に相互接続され、また前記中間層が前記第1金属層に対して選択的にエッチングされうる材料を含み、また前記第1金属層が前記第1側面上に位置する工程と、
前記第2側面上に感光層を加えてパターン化する工程と、
前記第1および第2側面上にはんだの接着層を導電的に設ける工程との限られた工程数で設けることができる。
従って、第2側面上に感光層を設ける間、キャリヤは第1側面上の処理済のパターン化された感光層上に問題なく置かれる。
11 第1金属層
12 中間層
13 第2金属層
14 第1エッチマスク
15 開口部
17 第2エッチマスク
20 半導体要素
21 接続領域
22 接続手段
30 キャリア
31〜35 接続導体
40 エンベロープ
Claims (8)
- 第1側面と対向する第2側面との間に、第1パターン化金属層と、パターン化中間層と、第2パターン化金属層と、エッチマスクとを有するキャリヤを備え、前記第1金属層が導電的に電気要素と前記第2金属層とに接続され、且つ前記中間層に対して突出する部分を含んでいる、電子機器を製造する方法であって、
第1エッチャントを用いて、所望のパターンに従って前記第1金属層をパターニングする工程と、
前記第1金属層及び前記第2金属層に対して選択される異なる第2エッチャントを用いて前記中間層をパターニングし、前記第1金属層に対してアンダーエッチングを行う工程と、
前記キャリヤの前記第1側面上に電気要素を配置し、前記電気要素の接点が前記第1金属層に導電的に接続される工程と、
エンベロープを貼り付ける工程と、前記第1金属層の前記突出する部分が前記エンベロープ内に固着され、
前記キャリヤの前記第2側面から、前記エッチマスクによって規定されるパターンに従って前期第2金属層をエッチングする工程とを含んでなる方法。 - 前記エッチマスクがはんだの接着層を有し、前記接着層が前記キャリヤの前記第1側面上にも存在することを特徴とする、請求項1に記載の方法。
- 前記第1金属層および前記中間層が、
前記所望のパターンに従って、前記接着層はエッチマスクとして使用されることを特徴とする、請求項2に記載の方法。 - 第1および第2側面を有するキャリヤであって、
第1エッチマスクと、
第1金属層と、
中間層と、
第2金属層と、
第2エッチマスクとのスタックを備え、
前記第1エッチマスクが前記キャリヤの前記第1側面上に位置し、また前記第2エッチマスクが前記キャリヤの前記第2側面上に位置し、
前記第1金属層が前記中間層に対して突出する部分を備えるように前記第1金属層及び前記第2金属層がパターニングされ、
前記第1エッチマスク及び前記第2エッチマスクが、はんだの接着層を備え、
前記中間層が、はんだ止めとして使用されうる導電性材料を含むことを特徴とするキャリヤ。 - 前記はんだの接着層が、Ag、NiPd、NiPdAuからなるグループから選択される材料を含むことを特徴とする、請求項4に記載のキャリヤ。
- 前記中間層が、Alと、Al、FeNi、FeCrNiの合金と、ステンレス鋼とからなるグループから選択される材料を含んでおり、また前記第1および第2金属層が銅を含んでいることを特徴とする、請求項4に記載のキャリヤ。
- 第1側面と、それに対向する第2側面とを有するキャリヤを製造する方法であって、
第1金属層と、中間層と、第2金属層とのスタックを設け、前記第1および第2金属層が導電的に相互接続され、また前記中間層が前記第1金属層に対して選択的にエッチングされうる材料を含み、また前記金属層が前記第1側面上に位置する工程と、
前記第2側面上に感光層を加えてパターン化する工程と、
前記第1および第2側面上にはんだの接着層を導電的に設ける工程と、
第1エッチャントを用いて、所望のパターンに従って前記第1金属層をパターニングする工程と、
前記第1金属層及び前記第2金属層に対して選択される異なる第2エッチャントを用いて前記中間層をパターニングし、前記第1金属層に対してアンダーエッチングを行う工程とを含んでなる方法。 - 前記接着層を設ける前に、前記第1側面上に感光層を設けて、その後パターン化を行うことを特徴とする、請求項7に記載の方法。
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EP02076426 | 2002-04-11 | ||
EP02079544 | 2002-10-30 | ||
PCT/IB2003/001299 WO2003085728A1 (en) | 2002-04-11 | 2003-04-10 | Carrier, method of manufacturing a carrier and an electronic device |
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JP2005522860A JP2005522860A (ja) | 2005-07-28 |
JP4526823B2 true JP4526823B2 (ja) | 2010-08-18 |
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US (1) | US7247938B2 (ja) |
EP (1) | EP1500137A1 (ja) |
JP (1) | JP4526823B2 (ja) |
KR (1) | KR101009818B1 (ja) |
CN (1) | CN1315185C (ja) |
AU (1) | AU2003219354A1 (ja) |
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2003
- 2003-04-10 JP JP2003582812A patent/JP4526823B2/ja not_active Expired - Fee Related
- 2003-04-10 WO PCT/IB2003/001299 patent/WO2003085728A1/en active Application Filing
- 2003-04-10 EP EP03715164A patent/EP1500137A1/en not_active Withdrawn
- 2003-04-10 KR KR1020047016110A patent/KR101009818B1/ko not_active IP Right Cessation
- 2003-04-10 US US10/510,588 patent/US7247938B2/en not_active Expired - Lifetime
- 2003-04-10 AU AU2003219354A patent/AU2003219354A1/en not_active Abandoned
- 2003-04-10 CN CNB038080575A patent/CN1315185C/zh not_active Expired - Lifetime
- 2003-04-11 TW TW092108375A patent/TWI280646B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR20040106338A (ko) | 2004-12-17 |
CN1647268A (zh) | 2005-07-27 |
AU2003219354A1 (en) | 2003-10-20 |
US20050153483A1 (en) | 2005-07-14 |
KR101009818B1 (ko) | 2011-01-19 |
WO2003085728A1 (en) | 2003-10-16 |
CN1315185C (zh) | 2007-05-09 |
US7247938B2 (en) | 2007-07-24 |
TW200401416A (en) | 2004-01-16 |
JP2005522860A (ja) | 2005-07-28 |
TWI280646B (en) | 2007-05-01 |
EP1500137A1 (en) | 2005-01-26 |
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