JP4525743B2 - 発光デバイス用iii族窒化物結晶基板ならびに発光デバイスおよびその製造方法 - Google Patents
発光デバイス用iii族窒化物結晶基板ならびに発光デバイスおよびその製造方法 Download PDFInfo
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- JP4525743B2 JP4525743B2 JP2007310725A JP2007310725A JP4525743B2 JP 4525743 B2 JP4525743 B2 JP 4525743B2 JP 2007310725 A JP2007310725 A JP 2007310725A JP 2007310725 A JP2007310725 A JP 2007310725A JP 4525743 B2 JP4525743 B2 JP 4525743B2
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- 239000013078 crystal Substances 0.000 title claims description 140
- 150000004767 nitrides Chemical class 0.000 title claims description 134
- 239000000758 substrate Substances 0.000 title claims description 103
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 238000000034 method Methods 0.000 description 60
- 239000007789 gas Substances 0.000 description 19
- 239000002585 base Substances 0.000 description 18
- 239000007791 liquid phase Substances 0.000 description 17
- 238000005530 etching Methods 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 9
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- 239000012808 vapor phase Substances 0.000 description 7
- 230000001965 increasing effect Effects 0.000 description 6
- 239000000155 melt Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000007716 flux method Methods 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002366 halogen compounds Chemical class 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 229910021098 KOH—NaOH Inorganic materials 0.000 description 1
- 235000005811 Viola adunca Nutrition 0.000 description 1
- 240000009038 Viola odorata Species 0.000 description 1
- 235000013487 Viola odorata Nutrition 0.000 description 1
- 235000002254 Viola papilionacea Nutrition 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000003325 tomography Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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Description
本発明にかかるIII族窒化物結晶基板は、面積が10cm2以上の主面を有し、主面の外周からの距離が5mm以下の外周領域を除く主領域において、総転位密度が1×104cm-2以上3×106cm-2以下であり、総転位密度に対する螺旋転位密度の比が0.5以上である。
本発明にかかる発光デバイスは、図5を参照して、実施形態1のIII族窒化物結晶基板100と、III族窒化物結晶基板100上に形成されている少なくとも1層のIII族窒化物層130とを含む。本実施形態の発光デバイスは、総転位密度が1×104cm-2以上3×106cm-2以下で総転位密度に対する螺旋転位密度の比が0.5以上であるIII族窒化物結晶基板上に形成された少なくとも1層のIII族窒化物層を含むため、図6に示すように、高い発光強度を有する。
本発明にかかる発光デバイスの製造方法の一実施形態は、図5を参照して、実施形態1のIII族窒化物結晶基板100を準備する工程と、そのIII族窒化物結晶基板100上に少なくとも1層のIII族窒化物層130を形成する工程とを含む。本実施形態の発光デバイスの製造方法によれば、総転位密度が1×104cm-2以上3×106cm-2以下で総転位密度に対する螺旋転位密度の比が0.5以上であるIII族窒化物結晶基板100上に少なくとも1層のIII族窒化物層130を形成することにより、発光強度の高い発光デバイスが得られる。
1.III族窒化物結晶基板の準備
(0001)面に対して5°の傾き角を有する主面を有する総転位密度が1×107cm-2で総転位密度に対する螺旋転位密度の比が0.1の直径50.8mm(2in)×厚さ500μmのGaN下地基板を用いて、実施形態1に記載の溶液法(液相法)およびHVPE法(気相法)を組み合わせることにより、総転位密度が5×10cm-2〜5×106cm-2の範囲で総転位密度に対して螺旋転位密度の比を有する複数のGaN結晶を成長させ、これらのGaN結晶からそれぞれ直径50.8mm(2in)×厚さ500μmのGaN基板を作製した。ここで、溶液法におけるGaN結晶の成長条件は、Ga融液の温度を1000℃、N2ガスの圧力を10MPaとした。また、HVPE法におけるGaN結晶の成長条件は、Ga塩化物ガスの分圧を10kPa、NH3ガスの分圧を100kPa、結晶成長温度を1100℃とした。
次に、MOCVD法により、各群の複数の直径50.8mm(2in)×厚さ500μmのGaN基板(III族窒化物結晶基板100)の一方の主面上に、少なくとも1層のIII族窒化物層130として、Siがドープされた厚さ2μmのn型GaN層131(キャリア濃度:2×1018cm-3)、6対のIn0.01Ga0.99N障壁層およびIn0.1Ga0.9N井戸層により構成される多重量子井戸構造を有する厚さ100nmの発光層132、Mgがドープされた厚さ20nmのp型Al0.18Ga0.82N層133(キャリア濃度:3×1017cm-3)およびMgがドープされた厚さ50nmのp型GaN層134(キャリア濃度:1×1018cm-3)を順に成長させた。
Claims (3)
- 面積が10cm2以上の主面を有し、前記主面の外周からの距離が5mm以下の外周領域を除く主領域において、総転位密度が1×104cm-2以上3×106cm-2以下であり、前記総転位密度に対する螺旋転位密度の比が0.9以上である発光デバイス用III族窒化物結晶基板。
- 請求項1の発光デバイス用III族窒化物結晶基板と、前記発光デバイス用III族窒化物結晶基板上に形成されている少なくとも1層のIII族窒化物層と、を含む発光デバイス。
- 請求項1の発光デバイス用III族窒化物結晶基板を準備する工程と、前記発光デバイス用III族窒化物結晶基板上に少なくとも1層のIII族窒化物層を形成する工程と、を含む発光デバイスの製造方法。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007310725A JP4525743B2 (ja) | 2007-11-30 | 2007-11-30 | 発光デバイス用iii族窒化物結晶基板ならびに発光デバイスおよびその製造方法 |
KR1020080113391A KR101519657B1 (ko) | 2007-11-30 | 2008-11-14 | Iii족 질화물 결정 기판과 발광 디바이스 및 그 제조방법 |
EP08020039A EP2067884B1 (en) | 2007-11-30 | 2008-11-17 | III Nitride crystal substrate, and light-emitting device and method of its manufacture |
TW097144552A TWI431173B (zh) | 2007-11-30 | 2008-11-18 | 發光元件用iii族氮化物結晶基板與發光元件及其製造方法 |
US12/324,897 US8546166B2 (en) | 2007-11-30 | 2008-11-28 | III nitride crystal substrate, and light-emitting device and method of its manufacture |
CNA2008101788280A CN101447542A (zh) | 2007-11-30 | 2008-12-01 | 第ⅲ族氮化物晶体衬底、发光器件及其制造方法 |
CN2011102513817A CN102330151A (zh) | 2007-11-30 | 2008-12-01 | 发光器件制造方法 |
US14/010,558 US8963166B2 (en) | 2007-11-30 | 2013-08-27 | III nitride crystal substrate and light-emitting device |
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JP2007310725A JP4525743B2 (ja) | 2007-11-30 | 2007-11-30 | 発光デバイス用iii族窒化物結晶基板ならびに発光デバイスおよびその製造方法 |
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JP2010006031A Division JP5446898B2 (ja) | 2010-01-14 | 2010-01-14 | Iii族窒化物結晶基板ならびに発光デバイスおよびその製造方法 |
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JP2009132575A JP2009132575A (ja) | 2009-06-18 |
JP4525743B2 true JP4525743B2 (ja) | 2010-08-18 |
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US (2) | US8546166B2 (ja) |
EP (1) | EP2067884B1 (ja) |
JP (1) | JP4525743B2 (ja) |
KR (1) | KR101519657B1 (ja) |
CN (2) | CN101447542A (ja) |
TW (1) | TWI431173B (ja) |
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KR100894460B1 (ko) * | 2004-03-31 | 2009-04-22 | 니뽄 가이시 가부시키가이샤 | 질화갈륨 단결정의 육성 방법 및 질화갈륨 단결정 |
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