JP4513497B2 - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
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- JP4513497B2 JP4513497B2 JP2004303923A JP2004303923A JP4513497B2 JP 4513497 B2 JP4513497 B2 JP 4513497B2 JP 2004303923 A JP2004303923 A JP 2004303923A JP 2004303923 A JP2004303923 A JP 2004303923A JP 4513497 B2 JP4513497 B2 JP 4513497B2
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- 238000003384 imaging method Methods 0.000 title claims description 21
- 230000003321 amplification Effects 0.000 claims description 60
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 60
- 239000012535 impurity Substances 0.000 claims description 24
- 238000009792 diffusion process Methods 0.000 claims description 23
- 238000006243 chemical reaction Methods 0.000 claims description 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 25
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 15
- 229910052698 phosphorus Inorganic materials 0.000 description 15
- 239000011574 phosphorus Substances 0.000 description 15
- 229910052785 arsenic Inorganic materials 0.000 description 14
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 14
- 230000000694 effects Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 6
- 230000000875 corresponding effect Effects 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000005524 hole trap Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005264 electron capture Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
図2は、単位画素11の回路構成の一例を示す回路図である。図2に示すように、本回路例に係る単位画素11Aは、光電変換素子、例えばフォトダイオード111に加えて、例えば転送トランジスタ112、リセットトランジスタ113および増幅トランジスタ114の3つのトランジスタを有する画素回路となっている。ここでは、これらトランジスタ112〜114として、例えばNチャネルのMOSトランジスタを用いている。
Claims (5)
- 光電変換素子と、当該光電変換素子で光電変換して得られる電荷に応じた信号を増幅して出力する増幅トランジスタとを含む単位画素が配列されてなる固体撮像装置であって、
前記増幅トランジスタは、埋込みチャネル型且つ第1導電型のMOSトランジスタであり、チャネル領域に第1導電型の不純物が導入され、前記第1導電型の不純物は拡散係数が異なる少なくとも2種類の不純物が導入されている
固体撮像装置。 - 前記第1導電型の不純物は、拡散係数の小さい不純物と拡散係数の大きい不純物がゲート絶縁膜下で異なる位置に分布している請求項1記載の固体撮像装置。
- 前記第1導電型の不純物は、拡散係数の小さい不純物の方が拡散係数の大きい不純物よりもゲート絶縁膜に近い側に濃い濃度で分布している請求項2記載の固体撮像装置。
- 前記第1導電型の不純物は、拡散係数の小さい不純物の方が拡散係数の大きい不純物よりもゲート絶縁膜よりも遠い側に濃い濃度で分布している請求項2記載の固体撮像装置。
- 前記増幅トランジスタのゲート電極が第2導電型のポリシリコンからなる
請求項1記載の固体撮像装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004303923A JP4513497B2 (ja) | 2004-10-19 | 2004-10-19 | 固体撮像装置 |
US11/252,909 US7759706B2 (en) | 2004-10-19 | 2005-10-18 | Solid-state imaging device having impurities with different diffusion coefficients |
CN200510124964A CN100579183C (zh) | 2004-10-19 | 2005-10-19 | 固态成像装置 |
TW094136572A TWI281348B (en) | 2004-10-19 | 2005-10-19 | Solid state imaging device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004303923A JP4513497B2 (ja) | 2004-10-19 | 2004-10-19 | 固体撮像装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010087173A Division JP5267497B2 (ja) | 2010-04-05 | 2010-04-05 | 固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006120679A JP2006120679A (ja) | 2006-05-11 |
JP4513497B2 true JP4513497B2 (ja) | 2010-07-28 |
Family
ID=36179866
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004303923A Expired - Fee Related JP4513497B2 (ja) | 2004-10-19 | 2004-10-19 | 固体撮像装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7759706B2 (ja) |
JP (1) | JP4513497B2 (ja) |
CN (1) | CN100579183C (ja) |
TW (1) | TWI281348B (ja) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007305925A (ja) * | 2006-05-15 | 2007-11-22 | Matsushita Electric Ind Co Ltd | 固体撮像装置 |
JP5050512B2 (ja) * | 2006-12-05 | 2012-10-17 | ソニー株式会社 | 固体撮像装置の製造方法および半導体装置の製造方法 |
JP4389959B2 (ja) * | 2007-04-23 | 2009-12-24 | ソニー株式会社 | 固体撮像装置、固体撮像装置の信号処理方法および撮像装置 |
KR101344441B1 (ko) * | 2007-07-16 | 2013-12-23 | 삼성전자 주식회사 | 이미지 센서 및 그 제조 방법 |
JP5215681B2 (ja) * | 2008-01-28 | 2013-06-19 | キヤノン株式会社 | 撮像装置及び撮像システム |
JP2010206173A (ja) * | 2009-02-06 | 2010-09-16 | Canon Inc | 光電変換装置およびカメラ |
JP5451098B2 (ja) | 2009-02-06 | 2014-03-26 | キヤノン株式会社 | 半導体装置の製造方法 |
JP2010206172A (ja) | 2009-02-06 | 2010-09-16 | Canon Inc | 撮像装置およびカメラ |
JP2010206174A (ja) | 2009-02-06 | 2010-09-16 | Canon Inc | 光電変換装置およびその製造方法ならびにカメラ |
JP5538876B2 (ja) | 2009-12-25 | 2014-07-02 | キヤノン株式会社 | 固体撮像装置 |
JP5814613B2 (ja) | 2010-05-21 | 2015-11-17 | キヤノン株式会社 | 固体撮像装置 |
JP5511541B2 (ja) * | 2010-06-24 | 2014-06-04 | キヤノン株式会社 | 固体撮像装置及び固体撮像装置の駆動方法 |
CN101986431A (zh) * | 2010-10-25 | 2011-03-16 | 上海宏力半导体制造有限公司 | 四晶体管cmos图像传感器及其设计方法 |
JP2013045879A (ja) | 2011-08-24 | 2013-03-04 | Sony Corp | 半導体装置、半導体装置の製造方法、固体撮像装置、固体撮像装置の製造方法、電子機器 |
CN103165628B (zh) * | 2011-12-14 | 2015-07-22 | 南京大学 | 基于复合介质栅mosfet光敏探测器的多功能曝光成像方法 |
CN102522417B (zh) * | 2012-01-11 | 2014-07-16 | 格科微电子(上海)有限公司 | 图像传感器及源跟随器 |
CN202633312U (zh) * | 2012-01-11 | 2012-12-26 | 格科微电子(上海)有限公司 | 图像传感器及源跟随器 |
EP2924979B1 (en) * | 2014-03-25 | 2023-01-18 | IMEC vzw | Improvements in or relating to imaging sensors |
CN103929600B (zh) * | 2014-04-30 | 2017-03-15 | 北京思比科微电子技术股份有限公司 | 高灵敏度cmos图像传感器共享型像素结构 |
CN104112754A (zh) * | 2014-07-03 | 2014-10-22 | 格科微电子(上海)有限公司 | 图像传感器及其形成方法 |
JP6700656B2 (ja) * | 2014-10-31 | 2020-05-27 | キヤノン株式会社 | 撮像装置 |
JP6486151B2 (ja) * | 2015-03-05 | 2019-03-20 | キヤノン株式会社 | 撮像システム |
JP2018170543A (ja) | 2017-03-29 | 2018-11-01 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置、電子機器、及び駆動方法 |
CN115347007A (zh) * | 2021-05-14 | 2022-11-15 | 思特威(上海)电子科技股份有限公司 | 像素单元、cmos图像传感器、电子设备及制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002051263A (ja) * | 2000-08-03 | 2002-02-15 | Sony Corp | 固体撮像装置およびカメラシステム |
JP2005286168A (ja) * | 2004-03-30 | 2005-10-13 | Canon Inc | 半導体装置及びそれを用いた固体撮像装置並びにそれらの製造方法 |
Family Cites Families (12)
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US4667213A (en) * | 1984-09-24 | 1987-05-19 | Rca Corporation | Charge-coupled device channel structure |
US5396096A (en) * | 1992-10-07 | 1995-03-07 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and manufacturing method thereof |
JPH07122733A (ja) * | 1993-10-21 | 1995-05-12 | Nec Corp | 電荷転送装置およびその製造方法 |
JP3648015B2 (ja) * | 1997-05-14 | 2005-05-18 | 株式会社ルネサステクノロジ | 半導体装置 |
JP3814379B2 (ja) * | 1997-09-01 | 2006-08-30 | キヤノン株式会社 | 光電変換装置 |
JP3571909B2 (ja) * | 1998-03-19 | 2004-09-29 | キヤノン株式会社 | 固体撮像装置及びその製造方法 |
JP3374099B2 (ja) * | 1999-03-12 | 2003-02-04 | 三洋電機株式会社 | 半導体装置の製造方法 |
US6630701B1 (en) * | 1999-08-16 | 2003-10-07 | Micron Technology, Inc. | Buried channel CMOS imager and method of forming same |
JP3779199B2 (ja) * | 2001-11-26 | 2006-05-24 | 株式会社ルネサステクノロジ | 半導体装置 |
US6747318B1 (en) * | 2001-12-13 | 2004-06-08 | Lsi Logic Corporation | Buried channel devices and a process for their fabrication simultaneously with surface channel devices to produce transistors and capacitors with multiple electrical gate oxides |
US7214575B2 (en) * | 2004-01-06 | 2007-05-08 | Micron Technology, Inc. | Method and apparatus providing CMOS imager device pixel with transistor having lower threshold voltage than other imager device transistors |
US7230302B2 (en) * | 2004-01-29 | 2007-06-12 | Enpirion, Inc. | Laterally diffused metal oxide semiconductor device and method of forming the same |
-
2004
- 2004-10-19 JP JP2004303923A patent/JP4513497B2/ja not_active Expired - Fee Related
-
2005
- 2005-10-18 US US11/252,909 patent/US7759706B2/en not_active Expired - Fee Related
- 2005-10-19 TW TW094136572A patent/TWI281348B/zh not_active IP Right Cessation
- 2005-10-19 CN CN200510124964A patent/CN100579183C/zh not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002051263A (ja) * | 2000-08-03 | 2002-02-15 | Sony Corp | 固体撮像装置およびカメラシステム |
JP2005286168A (ja) * | 2004-03-30 | 2005-10-13 | Canon Inc | 半導体装置及びそれを用いた固体撮像装置並びにそれらの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN100579183C (zh) | 2010-01-06 |
CN1764246A (zh) | 2006-04-26 |
TWI281348B (en) | 2007-05-11 |
JP2006120679A (ja) | 2006-05-11 |
TW200627941A (en) | 2006-08-01 |
US20060081957A1 (en) | 2006-04-20 |
US7759706B2 (en) | 2010-07-20 |
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