JP4503950B2 - Method for manufacturing phosphor-integrated LED lamp - Google Patents

Method for manufacturing phosphor-integrated LED lamp Download PDF

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JP4503950B2
JP4503950B2 JP2003273627A JP2003273627A JP4503950B2 JP 4503950 B2 JP4503950 B2 JP 4503950B2 JP 2003273627 A JP2003273627 A JP 2003273627A JP 2003273627 A JP2003273627 A JP 2003273627A JP 4503950 B2 JP4503950 B2 JP 4503950B2
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phosphor
chip
led chip
led lamp
resin
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巌 東海林
茂夫 藤澤
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Stanley Electric Co Ltd
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    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Description

本発明はＬＥＤランプの製造方法に関するものであり、詳細にはＬＥＤランプからの光の色と、このＬＥＤチップからの光により励起される蛍光体からの光の色との混合色をＬＥＤランプの発光色とするために、一体化されて蛍光体が組込まれるものとされているＬＥＤランプの製造方法に係るものである。 The present invention relates to a method for manufacturing an LED lamp, and more specifically, a mixed color of the color of light from an LED lamp and the color of light from a phosphor excited by light from the LED chip is represented by the LED lamp. The present invention relates to a method of manufacturing an LED lamp that is integrated and incorporated with a phosphor in order to obtain an emission color.

従来のこの種の白色ＬＥＤランプ９０の形成方法としては、図８に示すように基板９１上にマウントされたＬＥＤチップ９２を保護するために、このＬＥＤチップ９２を覆うレンズ９３を形成するための、透明エポキシ樹脂９３ａ中に所定の割合（例えば２５重量％）で蛍光体９３ｂを混和しておき、印刷手段、注入手段など適宜な手段で所定位置に配置し、熱硬化などで固化させるものである。（例えば特許文献１参照。）   As a conventional method of forming this type of white LED lamp 90, as shown in FIG. 8, in order to protect the LED chip 92 mounted on the substrate 91, a lens 93 for covering the LED chip 92 is formed. The phosphor 93b is mixed in the transparent epoxy resin 93a at a predetermined ratio (for example, 25% by weight), placed at a predetermined position by an appropriate means such as a printing means or an injection means, and solidified by thermosetting or the like. is there. (For example, refer to Patent Document 1.)

特開２０００−２２３７５０号公報（段落００３３〜段落００３７、図３）JP 2000-223750 A (paragraphs 0033 to 0037, FIG. 3)

しかしながら、上記のようにＬＥＤチップを覆う樹脂の全体に蛍光体を混和する方法では、樹脂と蛍光体との比重的な問題、結合性の問題などからトランスファーモールドを行うためのペレット化が困難であり、現実には液状の樹脂中に蛍光体を適宜な割合（例えば２５重量％）で混合しておき、上記のように印刷手段、注入手段などで液状のままで金型内に注入し、その後に加熱硬化の工程を行わなければ成らず、生産性の向上が困難である問題点を生じている。   However, in the method of mixing the phosphor in the entire resin covering the LED chip as described above, pelletization for performing transfer molding is difficult due to the specific gravity problem between the resin and the phosphor and the problem of bonding. In reality, the phosphor is mixed in a liquid resin at an appropriate ratio (for example, 25% by weight), and injected into the mold in a liquid state by the printing means, the injection means, etc. as described above, After that, a heat curing step must be performed, resulting in a problem that it is difficult to improve productivity.

また、液状のままで作業を行うものであるので、前記したように液状の状態の樹脂中では、時間の経過と共に、比重の重い蛍光体が沈殿して均一な拡散状態が失われ、白色ＬＥＤランプ９０の性能低下の要因となるので、常時に樹脂の攪拌を行い蛍光体の均一な拡散状態を保つ作業なども必要となり、工程が煩雑化する問題点も生じ、更に言えば、例え上記の作業を行ったとしても、硬化のための加熱時などには依然として沈殿を生じるので、完全な解決策とは成らないものであった。   In addition, since the work is performed in a liquid state, in the resin in a liquid state as described above, a phosphor having a high specific gravity precipitates over time, and the uniform diffusion state is lost. Since the performance of the lamp 90 is reduced, it is necessary to constantly stir the resin and maintain a uniform diffusion state of the phosphor, which causes a problem that the process becomes complicated. Even if work was performed, precipitation still occurred during heating for curing, and so on, which was not a complete solution.

本発明は上記した従来の課題を解決するための具体的な手段として、基台にダイマウントが行われたＬＥＤチップのボンディングパッドを除く部分に、適量の蛍光体が添加された熱可塑性樹脂もしくは熱硬化性樹脂で形成したチップカバーが熱溶着され、前記ボンディングパッドにはボンディングワイヤによる配線が行われ、前記ＬＥＤチップ、チップカバー、ボンディングワイヤを覆って透明樹脂のトランスファモールドによるケーシングが行れていることを特徴とする蛍光体一体型ＬＥＤランプの製造方法を提供することで課題を解決するものである。 As a specific means for solving the above-described conventional problems, the present invention provides a thermoplastic resin in which an appropriate amount of phosphor is added to a portion other than the bonding pad of the LED chip on which the die mounting is performed on the base, or A chip cover made of a thermosetting resin is thermally welded, wiring is performed on the bonding pad by a bonding wire, a casing is formed by a transfer molding of a transparent resin covering the LED chip, the chip cover, and the bonding wire. It solves the problem by providing a method for producing a phosphor integral LED lamps, characterized in that there.

本発明の蛍光体一体型ＬＥＤランプでは、適量の蛍光体が添加された熱可塑性樹脂によるチップカバーをＬＥＤチップに取付けるという単純な作業で、蛍光体の一体化が可能となるので、ケースを形成する樹脂には蛍光体の添加の必要がなく、よって、トランスファモールドによるケースの形成が可能となって、生産性の向上が可能となる極めて優れた効果がある。また、常温時には固体状の樹脂中に蛍光体を混和しておくものであるので、作業中に蛍光体の沈殿を生じることもなく性能の低下も生じない。 In the phosphor-integrated LED lamp of the present invention, the phosphor can be integrated by a simple operation of attaching a chip cover made of a thermoplastic resin to which an appropriate amount of phosphor is added to the LED chip. There is no need to add a phosphor to the resin to be formed. Therefore, the case can be formed by transfer molding, and the productivity can be improved. Further, since the normal temperature are those to be mixed phosphors in solid resin, does not occur loss of performance without causing the precipitation of the phosphor during operation.

本発明では、ケースの形成をトランスファーモールドで行うことで迅速に形成するものとするという目的を、蛍光体を保持するチップカバーを用意することで、ケースを形成する樹脂中に蛍光体を混和することをなくして実現した。また、同時に蛍光体の沈殿も生じないようにして、蛍光体一体型ＬＥＤランプの性能も向上させた。   In the present invention, for the purpose of forming the case quickly by transfer molding, a phosphor is mixed in the resin forming the case by preparing a chip cover that holds the phosphor. It was realized without anything. At the same time, the performance of the phosphor-integrated LED lamp was improved by preventing the precipitation of the phosphor.

図１〜図３は、本発明に係る蛍光体一体型ＬＥＤランプ１の実施例１の製造方法を工程の順に示すものであり、先ず、最初の工程としては基板２上に敷設された回路パターン２ａにＬＥＤチップ３のダイマウントを行う。尚、この実施例では前記ＬＥＤチップ３は、サファイヤ基板上に活性層が形成され表面側に一対の表面電極３ａが設けられたものを、表面を下方としたフェースダウン状態で回路パターン２ａにダイマウントした例で示してあり、従って、この状態で正負極の配線は完了しているので、以後にワイヤボンディングは行われることはない。   FIG. 1 to FIG. 3 show the manufacturing method of Example 1 of the phosphor-integrated LED lamp 1 according to the present invention in the order of steps. First, as the first step, a circuit pattern laid on the substrate 2 is shown. 2a, the LED chip 3 is die mounted. In this embodiment, the LED chip 3 is formed on a circuit pattern 2a in a face-down state in which an active layer is formed on a sapphire substrate and a pair of surface electrodes 3a are provided on the surface side with the surface facing downward. This is shown in the mounted example. Therefore, since the positive and negative wirings are completed in this state, no wire bonding is performed thereafter.

図２は、上記ダイマウントの工程に続いて行われるチップカバー取付工程であり、例えば、熱可塑性の透明樹脂４ａ中に適量の蛍光体４ｂを混和し略函状として形成されたチップカバー４をＬＥＤチップ３に被着し、全体の加熱を行うことでＬＥＤチップ３にチップカバー４を溶着させるのである。ここで、この実施例１では、上記にも説明したように、以後にワイヤボンド工程が行われることはないので、続いてケース５の形成工程が行われる。   FIG. 2 shows a chip cover mounting step performed subsequent to the die mounting step. For example, a chip cover 4 formed in a substantially box shape by mixing an appropriate amount of phosphor 4b in a thermoplastic transparent resin 4a. The chip cover 4 is welded to the LED chip 3 by being attached to the LED chip 3 and heating the whole. Here, in the first embodiment, as described above, since the wire bonding process is not performed thereafter, the forming process of the case 5 is subsequently performed.

図３は、上記ケース５の形成工程を示すものであり、上記にも説明したように本発明により適量の蛍光体４ｂを保持するチップカバー４をＬＥＤチップ３に熱溶着により被着したことで、ＬＥＤチップ３から放射される光は、チップカバー４により、例えば、白色など所望の色光に変換されている。従って、ケース５を形成するための、例えばエポキシ樹脂など透明樹脂中に蛍光体を混和する必要はない。   FIG. 3 shows a process of forming the case 5, and as described above, the chip cover 4 holding an appropriate amount of the phosphor 4b according to the present invention is attached to the LED chip 3 by heat welding. The light emitted from the LED chip 3 is converted into desired color light such as white by the chip cover 4. Therefore, it is not necessary to mix a phosphor in a transparent resin such as an epoxy resin for forming the case 5.

よって、ケース５の形成にあたっては、加熱して液状となった熱硬化性樹脂を金型中に流し込み、この金型中で迅速に硬化させるトランスファモールドが行えるものとして、ディスペンサによる注入、及び、加熱炉中での硬化工程を不要として、この種の蛍光体一体型ＬＥＤランプ１の製造時間を格段に短縮可能とするものである。   Therefore, in forming the case 5, it is possible to perform transfer molding in which a thermosetting resin that has been heated to a liquid state is poured into a mold and rapidly cured in the mold. This eliminates the need for a curing step in the furnace, and makes it possible to significantly reduce the manufacturing time of this type of phosphor-integrated LED lamp 1.

また、図４〜図６は本発明に係る蛍光体一体型ＬＥＤランプ１の実施例２の製造方法を工程の順に示すものであり、この実施例２で採用されるＬＥＤチップ３には、背面側にはマウント用電極３ｂが設けられ、表面側にはパッド電極３ｃが設けられ、前記基板２の一方の回路パターン２ｂとマウント用電極３ｂとでＬＥＤチップ３のダイマウントが行われている。   FIGS. 4 to 6 show the manufacturing method of Example 2 of the phosphor-integrated LED lamp 1 according to the present invention in the order of steps, and the LED chip 3 employed in Example 2 includes a back surface. A mounting electrode 3b is provided on the side, a pad electrode 3c is provided on the surface side, and the LED chip 3 is die-mounted by one circuit pattern 2b of the substrate 2 and the mounting electrode 3b.

従って、前記ＬＥＤチップ３にチップカバー４を被着させ、熱溶着により固定した後には、前記ＬＥＤチップ３のパッド電極３ｃと、基板２の他の一方の回路パターン２ｃとを金線６によりワイヤーボンドを行う必要が生じる。よって、前記チップカバー４にはパッド電極３ｃの部分を外部に対して解放する開口部４ｃが設けられている。   Therefore, after the chip cover 4 is attached to the LED chip 3 and fixed by thermal welding, the pad electrode 3c of the LED chip 3 and the other circuit pattern 2c of the substrate 2 are wired by the gold wire 6. A bond needs to be made. Therefore, the chip cover 4 is provided with an opening 4c for releasing the pad electrode 3c from the outside.

そして、前記ＬＥＤチップ３へのチップカバー４の被着、加熱による固定が行われた後には、前記パッド電極３ｃと他の一方の回路パターン２ｃとの金線６によるワイヤーボンドが行われる（図４参照）。ここで、この実施例２においては、ワイヤーボンドが行われた後の時点で、再度、前記チップカバー４が形成された樹脂の溶融温度に至る温度での再加熱が行われる。   After the chip cover 4 is attached to the LED chip 3 and fixed by heating, wire bonding is performed by the gold wire 6 between the pad electrode 3c and the other circuit pattern 2c (FIG. 4). Here, in Example 2, at the time after wire bonding is performed, reheating is performed again at a temperature that reaches the melting temperature of the resin on which the chip cover 4 is formed.

これにより、前記チップカバー４が熱可塑性樹脂で形成されている場合、あるいは、熱硬化性樹脂であっても初回の加熱が比較的に低温であった場合には、チップカバー４は再度軟化するものとなり、更に、ＬＥＤチップ３との密着性を向上させたり、あるいは、溶融により前記パッド電極３ｃ上に流れ込み、図５に示すように前記金線６を保持するなどして、固定を一層に確実なものとする。そして、上記の再加熱が行われた後には、図６にも示すように、実施例１と同様にトランスファモールドによりケース５が形成される。   Thereby, when the chip cover 4 is formed of a thermoplastic resin, or even if it is a thermosetting resin, when the initial heating is relatively low, the chip cover 4 is softened again. Furthermore, the adhesion with the LED chip 3 is improved, or the molten metal flows onto the pad electrode 3c by melting and holds the gold wire 6 as shown in FIG. Make sure. And after said reheating is performed, as shown also in FIG. 6, case 5 is formed by transfer molding like Example 1. FIG.

また、図示は省略するが、実施例１のＬＥＤチップ３をフェイスダウンすることなく、サファイヤ基板の側で基板２にダイマウントしたものもあり、この場合には、ＬＥＤチップ３の上面の２箇所に金線６によるワイヤーボンドが行われるものとなるが、この場合には当然に、前記チップカバー４は２箇所に開口部が設けられたもの、あるいは、２箇所を含む開口部が設けられたものが採用される。   Although not shown in the drawings, there is also one in which the LED chip 3 of Example 1 is die-mounted on the substrate 2 on the sapphire substrate side without facing down. In this case, two locations on the upper surface of the LED chip 3 In this case, naturally, the chip cover 4 is provided with openings at two places, or with openings including two places. Things are adopted.

また、実際の蛍光体一体型ＬＥＤランプ１の製造にあたっては、基板２は少なくとも長手方向で適宜の複数が接続された形状として形成されており、これに伴い回路パターン２ａ（図示せず、図１、図４参照）も同じ数が設けられている。そして、それぞれの回路パターン２ａには、ＬＥＤチップ３（図示せず、図１、図４参照）がマウントされ、金線６によるワイヤーボンドが行わて、横列に並ぶものとされている。   Further, in the actual manufacture of the phosphor-integrated LED lamp 1, the substrate 2 is formed in a shape in which an appropriate plurality is connected at least in the longitudinal direction, and accordingly, a circuit pattern 2a (not shown, FIG. 1) is formed. The same number is also provided. Each circuit pattern 2a is mounted with an LED chip 3 (not shown, see FIGS. 1 and 4), wire-bonded with a gold wire 6 and arranged in a row.

そして、前記したように横列に並んだＬＥＤチップ３の全てを覆うように一体化した状態でケース５が形成される。しかる後に図７に示すように、蛍光体一体型ＬＥＤランプ１としての長手方向に沿うように前記ケース５を含み基板２を、それぞれのＬＥＤチップ３の中間の位置で切断、分離させれば、個別の蛍光体一体型ＬＥＤランプ１が得られるものとなる。   As described above, the case 5 is formed in an integrated state so as to cover all the LED chips 3 arranged in a row. Thereafter, as shown in FIG. 7, if the substrate 2 including the case 5 is cut and separated at an intermediate position between the LED chips 3 along the longitudinal direction as the phosphor-integrated LED lamp 1, An individual phosphor-integrated LED lamp 1 is obtained.

次いで、上記説明の製造方法により得られる本発明の蛍光体一体型ＬＥＤランプ１の作用、効果について説明を行う。先ず、第一には、ＬＥＤチップ３を覆うチップカバー４を設け、このチップカバー４に必要とされる量の蛍光体４ｂを保持させるものとしたことで、ケース５を形成するための樹脂中に蛍光体４ｂを分散させなくて良いものとなり、これにより、ケース５のトランスファ成形での形成が可能となって、蛍光体一体型ＬＥＤランプ１の生産性が格段に向上する。   Next, functions and effects of the phosphor-integrated LED lamp 1 of the present invention obtained by the manufacturing method described above will be described. First, a chip cover 4 that covers the LED chip 3 is provided, and the chip cover 4 holds a necessary amount of the phosphor 4b, so that the resin in the case 5 can be formed. Thus, it is not necessary to disperse the phosphor 4b, thereby enabling the case 5 to be formed by transfer molding, and the productivity of the phosphor-integrated LED lamp 1 is significantly improved.

また、第二には、上記のようにチップカバー４により蛍光体４ｂをＬＥＤチップ３の周縁に集中して配置することで、ＬＥＤチップ３から放射される光と蛍光体４ｂとが当接し拡散が行われる範囲を、ＬＥＤチップ３に近接する狭い範囲に限定することが可能となる。従って、発光源が過剰に大きくなることを防ぐと共に、過剰な拡散により光量が低下するのも防止し、明るい蛍光体一体型ＬＥＤランプ１が提供可能となる。   Second, the phosphor 4b is concentrated on the periphery of the LED chip 3 by the chip cover 4 as described above, so that the light emitted from the LED chip 3 and the phosphor 4b are in contact with each other and diffused. It is possible to limit the range in which is performed to a narrow range close to the LED chip 3. Accordingly, it is possible to prevent the light emitting source from becoming excessively large and to prevent the amount of light from being reduced due to excessive diffusion, thereby providing a bright phosphor-integrated LED lamp 1.

本発明は、ＬＥＤチップからの発光色と、このＬＥＤチップからの光に励起される蛍光体からの発光色との混合色、即ち、略補色関係にある２色の混合色で白色を得るときの例で説明したが、前記ＬＥＤチップが発する光を不可視光である紫外線とし、赤（Ｒ）、緑（Ｇ）、青（Ｂ）三原色の蛍光体を組合せ、蛍光体からの発光色のみで白色光を得るＬＥＤランプに応用することも可能である。   In the present invention, when a white color is obtained with a mixed color of an emission color from an LED chip and an emission color from a phosphor excited by light from the LED chip, that is, a mixed color of approximately two complementary colors As described in the example, the light emitted from the LED chip is ultraviolet light that is invisible light, and phosphors of the three primary colors of red (R), green (G), and blue (B) are combined, and only the emission color from the phosphor is used. It is also possible to apply to an LED lamp that obtains white light.

本発明に係る蛍光体一体型ＬＥＤランプの製造方法の実施例１における第一工程を示す断面図である。It is sectional drawing which shows the 1st process in Example 1 of the manufacturing method of the fluorescent substance integrated LED lamp which concerns on this invention. 同じ実施例１における第二工程を示す断面図である。7 is a cross-sectional view showing a second step in the same Example 1. FIG. 同じく実施例１における第三工程を示す断面図である。FIG. 6 is a cross-sectional view showing a third step in Example 1 in the same manner. 同じく本発明に係る蛍光体一体型ＬＥＤランプの製造方法の実施例２における第一工程を示す断面図である。It is sectional drawing which similarly shows the 1st process in Example 2 of the manufacturing method of the fluorescent substance integrated LED lamp which concerns on this invention. 同じ実施例２における第二工程を示す断面図である。11 is a cross-sectional view showing a second step in the same Example 2. FIG. 同じく実施例２における第三工程を示す断面図である。FIG. 6 is a cross-sectional view showing a third step in Example 2 in the same manner. 実際の製造工程における個別のＬＥＤランプへの分離工程の例を示す説明図である。It is explanatory drawing which shows the example of the isolation | separation process to the separate LED lamp in an actual manufacturing process. 従来例を示す説明図である。It is explanatory drawing which shows a prior art example.

符号の説明Explanation of symbols

１…蛍光体一体型ＬＥＤランプ
２…基板
２ａ…回路パターン
２ｂ…一方の回路パターン
２ｃ…他の一方の回路パターン
３…ＬＥＤチップ
３ａ…表面電極
３ｂ…マウント用電極
３ｃ…パッド電極
４…チップカバー
４ａ…透明樹脂
４ｂ…蛍光体
４ｃ…開口部
５…ケース
６…金線 DESCRIPTION OF SYMBOLS 1 ... Phosphor-integrated LED lamp 2 ... Board | substrate 2a ... Circuit pattern 2b ... One circuit pattern 2c ... Other one circuit pattern 3 ... LED chip 3a ... Surface electrode 3b ... Mounting electrode 3c ... Pad electrode 4 ... Chip cover 4a ... Transparent resin 4b ... Phosphor 4c ... Opening 5 ... Case 6 ... Gold wire

Claims (4)

基台にダイマウントが行われたＬＥＤチップのボンディンパッドを除く部分に、適量の蛍光体が添加された熱可塑性樹脂もしくは熱硬化性樹脂で形成したチップカバーを熱溶着し、その後に前記ボンディングパッドにボンディングワイヤによる配線を行い、更に前記ＬＥＤチップ、チップカバー、ボンディングワイヤを覆って透明樹脂のトランスファモールドによりケーシングを行うことを特徴とする蛍光体一体型ＬＥＤランプの製造方法。   A chip cover made of a thermoplastic resin or thermosetting resin to which an appropriate amount of phosphor is added is thermally welded to a portion of the LED chip that is die-mounted on the base except for the bonding pad, and then the bonding is performed. A method of manufacturing a phosphor-integrated LED lamp, wherein wiring is performed on a pad using a bonding wire, and the casing is formed by a transparent resin transfer mold covering the LED chip, the chip cover, and the bonding wire. 前記ボンディングパッドにボンディングワイヤによる配線が行われた後には、前記チップカバーが形成された樹脂の溶融温度に至る再加熱工程が行われることを特徴とする請求項１記載の蛍光体一体型ＬＥＤランプの製造方法。   2. The phosphor-integrated LED lamp according to claim 1, wherein after the bonding pad is wired with a bonding wire, a reheating step to a melting temperature of the resin on which the chip cover is formed is performed. Manufacturing method. 基板上に敷設された回路パターン上にＬＥＤチップのダイマウントを行う工程と、前記ダイマウントの後に、適量の蛍光体が添加された熱可塑性樹脂もしくは熱硬化性樹脂で形成した固体状のチップカバーを前記ＬＥＤチップに被着し全体の加熱を行うことでＬＥＤチップにチップカバーを熱溶着する工程と、を有することを特徴とするＬＥＤランプの製造方法。 A step of performing die mounting of an LED chip on a circuit pattern laid on a substrate, and a solid chip cover formed of a thermoplastic resin or a thermosetting resin to which an appropriate amount of phosphor is added after the die mounting. And a step of thermally welding the chip cover to the LED chip by heating the entire LED chip and heating the entire LED chip. 前記熱溶着の後に、前記固体状のチップカバーを覆う透明樹脂からなるケースを形成する工程と、を有することを特徴とする請求項３に記載のＬＥＤランプの製造方法。 The method of manufacturing an LED lamp according to claim 3, further comprising: forming a case made of a transparent resin that covers the solid chip cover after the heat welding.
JP2003273627A 2003-07-11 2003-07-11 Method for manufacturing phosphor-integrated LED lamp Expired - Fee Related JP4503950B2 (en)

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