JP4492623B2 - Manufacturing method of surface acoustic wave device - Google Patents

Manufacturing method of surface acoustic wave device Download PDF

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JP4492623B2
JP4492623B2 JP2007037572A JP2007037572A JP4492623B2 JP 4492623 B2 JP4492623 B2 JP 4492623B2 JP 2007037572 A JP2007037572 A JP 2007037572A JP 2007037572 A JP2007037572 A JP 2007037572A JP 4492623 B2 JP4492623 B2 JP 4492623B2
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acoustic wave
surface acoustic
grinding
wafer
wave device
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JP2007143192A (en
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敦 鷹野
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Panasonic Corp
Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Description

本発明は、弾性表面波デバイスの製造方法に関するものである。   The present invention relates to a method for manufacturing a surface acoustic wave device.

一般にＳＡＷフィルタなどの弾性表面波デバイスは、圧電体基板の表面に櫛形トランスデューサが設けられ、櫛形トランスデューサを形成する一対の電極間を弾性表面波が伝搬することによりデバイス特性が形成されるものである。   In general, a surface acoustic wave device such as a SAW filter is provided with a comb-shaped transducer on the surface of a piezoelectric substrate, and a device characteristic is formed by propagation of a surface acoustic wave between a pair of electrodes forming the comb-shaped transducer. .

そして、弾性表面波デバイスを構成する圧電体基板においては、櫛形トランスデューサを形成する電極間を伝搬する弾性表面波信号以外に、圧電体基板の内部を伝わり基板裏面において反射される不要波信号が存在しデバイス特性に影響を及ぼすことから、この不要波信号を減少させるため、従来、圧電体基板の裏面に弾性表面波の伝搬方向に対して交差する方向に複数の溝を設け不要波信号の反射を拡散させることでその影響を低減させていた。   In addition, in the piezoelectric substrate constituting the surface acoustic wave device, in addition to the surface acoustic wave signal propagating between the electrodes forming the comb-shaped transducer, there is an unnecessary wave signal that propagates inside the piezoelectric substrate and is reflected on the back surface of the substrate. In order to reduce this unwanted wave signal, it has hitherto been necessary to reduce the unwanted wave signal by providing a plurality of grooves on the back surface of the piezoelectric substrate in the direction intersecting the propagation direction of the surface acoustic wave. The effect was reduced by diffusing.

なお、この出願の発明に関連する先行技術文献情報としては、例えば、特許文献１が知られている。
特開昭５６−１３２８０６号公報 For example, Patent Document 1 is known as prior art document information related to the invention of this application.
JP-A-56-132806

しかしながら、不要波信号対策の溝は通常ダイヤモンドカッタやリュータによって形成されるため、複数の溝が直線的かつ等間隔に形成されてしまい、各溝に対する不要波の反射条件が一定となってしまうことから、より高度な不要波対策が困難なものとなっていた。   However, since the grooves for unwanted wave signal countermeasures are usually formed by a diamond cutter or a leuter, a plurality of grooves are formed linearly and at equal intervals, and the reflection conditions of unwanted waves for each groove are constant. Therefore, more advanced measures against unwanted waves have become difficult.

そこで、本発明はこのような問題を解決し、性能を向上した弾性表面波デバイスを提供することを目的とする。   Therefore, an object of the present invention is to provide a surface acoustic wave device that solves such problems and has improved performance.

この目的を達成するために本発明は、特に、弾性表面波デバイスの裏面に設けられる不要波信号対策用の複数の溝に対して、隣り合う溝の間隔を一端側から他端側に向けて狭くなるように設定したのである。   In order to achieve this object, the present invention, in particular, with respect to a plurality of grooves for preventing unwanted wave signals provided on the back surface of a surface acoustic wave device, the interval between adjacent grooves is directed from one end to the other end. It was set to be narrow.

この構成により、溝の延伸方向と弾性表面波の伝搬方向との交差角がそれぞれの溝によって変わることとなり、各溝に対する不要波の反射条件を不均一化できるので、弾性表面波デバイスの特性を向上させることができるのである。   With this configuration, the crossing angle between the extending direction of the groove and the propagation direction of the surface acoustic wave varies depending on the groove, and the reflection conditions of unnecessary waves for each groove can be made non-uniform, so the characteristics of the surface acoustic wave device can be improved. It can be improved.

以下、本発明の一実施の形態について図を用いて説明する。   Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

図１は弾性表面波デバイスの一例である弾性表面波フィルタの斜視図であり、その基本構造はＬｉＴａＯ3やＬｉＮｂＯ3などの圧電体基板１上に櫛形トランスデューサ２を形成する所定の電極２ａ，２ｂが弾性表面波の伝搬方向に並設された構造であり、図２に示すごとく櫛形トランスデューサ２を形成する一方の電極２ａに入力された信号により圧電体基板１の表面に歪みが生じこの歪みが弾性表面波３となり他方の電極２ｂに伝搬されフィルタ特性を構成するのである。 FIG. 1 is a perspective view of a surface acoustic wave filter which is an example of a surface acoustic wave device, and its basic structure is predetermined electrodes 2a and 2b for forming a comb-shaped transducer 2 on a piezoelectric substrate 1 such as LiTaO 3 or LiNbO 3. Are arranged side by side in the propagation direction of the surface acoustic wave. As shown in FIG. 2, the surface of the piezoelectric substrate 1 is distorted by a signal input to one of the electrodes 2a forming the comb-shaped transducer 2. It becomes a surface acoustic wave 3 and propagates to the other electrode 2b to constitute a filter characteristic.

そして、弾性表面波フィルタにおいては、背景技術として述べたように圧電体基板１の表面を伝搬する弾性表面波３の他にトランスデューサを形成する一方の電極２ａから圧電基板１の内部を伝わり裏面で反射され他方の電極２ｂに伝搬される不要波４を抑制するため、圧電体基板１の裏面に複数の溝５を設けていたのであるが、この弾性表面波フィルタにおいては図３に示すように、圧電体基板１の裏面に設ける複数の溝５の延伸方向を、弾性表面波の伝搬方向と交差する向きに設定するとともに、隣り合う溝５の間隔を一端側７から他端側８に向けて狭くなるように設定することで、溝５の延伸方向と弾性表面波の伝搬方向との交差角がそれぞれの溝５によって変わることとなり、各溝５に対する不要波４の反射条件を不均一なものとでき、従来の構造のものに比べて圧電体基板１の裏面で反射された不要波４の分散度合いを大きくし、フィルタ特性への影響を抑制しているのである。   In the surface acoustic wave filter, as described in the background art, in addition to the surface acoustic wave 3 propagating on the surface of the piezoelectric substrate 1, the inner surface of the piezoelectric substrate 1 is transmitted from one electrode 2a forming the transducer. In order to suppress the unwanted wave 4 that is reflected and propagated to the other electrode 2b, a plurality of grooves 5 are provided on the back surface of the piezoelectric substrate 1. In this surface acoustic wave filter, as shown in FIG. The extending direction of the plurality of grooves 5 provided on the back surface of the piezoelectric substrate 1 is set in a direction crossing the propagation direction of the surface acoustic wave, and the interval between the adjacent grooves 5 is directed from the one end side 7 to the other end side 8. Therefore, the crossing angle between the extending direction of the groove 5 and the propagation direction of the surface acoustic wave varies depending on each groove 5, and the reflection condition of the unnecessary wave 4 with respect to each groove 5 is not uniform. With things , Degree of dispersion of been unnecessary waves 4 reflected by the back surface of the piezoelectric substrate 1 as compared with the conventional structure is increased, with each other to suppress the influence of the filter characteristics.

なお、隣り合う溝５の最大ピッチは圧電体基板１の素材や厚み、使用周波数などによって適宜設定されるもので、隣り合う溝５の間隔をこの最大ピッチの範囲を超えない範囲で適宜設定すればよいものである。   The maximum pitch of the adjacent grooves 5 is appropriately set according to the material, thickness, operating frequency, etc. of the piezoelectric substrate 1, and the interval between the adjacent grooves 5 is appropriately set within a range not exceeding this maximum pitch range. It is good.

また、溝５の設け方についても、従来のように直線的に設けていたのでは、圧電体基板１の曲げ応力に対して分割用の切り込みとして作用してしまい、圧電体基板１の薄型化の妨げとなり部品の低背化が進む中においては非常に不利な構成となることから、溝５を曲線状に形成することで先に述べたフィルタ特性の向上に加えて曲げ応力に対する強度も向上できることから圧電体基板１の薄型化を可能とし、弾性表面波フィルタの低背化に寄与できるのである。   In addition, if the groove 5 is provided linearly as in the prior art, it acts as a dividing notch for the bending stress of the piezoelectric substrate 1, and the piezoelectric substrate 1 is thinned. As the height of the parts is reduced and the height of the parts is reduced, the groove 5 is formed in a curved shape, so that the strength against bending stress is improved in addition to the improvement of the filter characteristics described above. As a result, the piezoelectric substrate 1 can be made thin, and the surface acoustic wave filter can be reduced in height.

そして、このような弾性表面波フィルタを形成するにあたっては、図４に示すように、先ず弾性表面波フィルタを構成する圧電体基板１を複数一括形成するウエハ９の表面に櫛形トランスデューサ２などの所定の電極２ａ，２ｂと個片分割用のハーフカット溝１０を形成し、その面を保護フィルム１１で覆った状態とし裏面を研削することで個片の弾性表面波フィルタを形成するものであり、特にウエハ９の裏面研削においては、図５に示されるように、自転する研削ホイル１２をウエハ９の研削面に当接させて研削面を研削ホイル１２の周回方向１３に研削するとともに、ウエハ９を自転させることにより研削ポイントを更新することでウエハ９全体を研削するのであるが、研削ホイル１２とウエハ９の当接箇所において図６に示すように、ウエハ９を研削ホイル１２の周回面に対して傾斜させウエハ９の半分のみを当接するように設定することで、図７に示されるようなウエハ９の回転軸１３ａを中心とした渦巻き状の研削溝５が形成されることとなり、分割後の個片となった弾性表面波フィルタに対してウエハ９の中心側から外径方向に向けて隣り合う溝５の間隔が広がった曲線状の溝を形成することができるのである。   In forming such a surface acoustic wave filter, as shown in FIG. 4, first, a predetermined shape such as a comb-shaped transducer 2 is formed on the surface of a wafer 9 on which a plurality of piezoelectric substrates 1 constituting the surface acoustic wave filter are collectively formed. The electrodes 2a, 2b and the half-cut groove 10 for dividing the piece are formed, and the surface is covered with the protective film 11, and the back surface is ground to form a piece of surface acoustic wave filter. In particular, in the rear surface grinding of the wafer 9, as shown in FIG. 5, the grinding wheel 12 that rotates is brought into contact with the grinding surface of the wafer 9 to grind the grinding surface in the circumferential direction 13 of the grinding foil 12. The whole wafer 9 is ground by renewing the grinding point by rotating the wheel, as shown in FIG. 6 at the contact point between the grinding foil 12 and the wafer 9. By setting the wafer 9 to be inclined with respect to the circumferential surface of the grinding foil 12 so as to contact only half of the wafer 9, a spiral grinding around the rotation axis 13 a of the wafer 9 as shown in FIG. 7 is performed. The groove 5 is formed, and the curved groove in which the interval between the adjacent grooves 5 is widened from the center side of the wafer 9 toward the outer diameter direction with respect to the surface acoustic wave filter that has been divided into pieces is formed. It can be formed.

また、ウエハ９に対してこのような溝５が形成された場合、例えば破線１５で囲んだ領域で形成される溝５と破線１６で囲んだ領域で形成される溝５とでは、弾性表面波の伝搬方向に対する向きが異なってしまうため、弾性表面波フィルタにおける不要波４の抑制効率に差が生じてしまうことから、図８に示されるごとくウエハ９を複数用意し、回転軸１３ｂを中心軸としてそれぞれを回転対称に配置し、この回転軸１３を軸として複数のウエハ９を回転させ先に述べたように研削することでそれぞれのウエハ９においては一定方向の溝５が形成されるようになるので、個片の弾性表面波フィルタの特性バラツキを小さくすることができる。   When such a groove 5 is formed on the wafer 9, for example, a surface acoustic wave is generated between the groove 5 formed in the region surrounded by the broken line 15 and the groove 5 formed in the region surrounded by the broken line 16. Since the direction with respect to the propagation direction is different, there is a difference in the suppression efficiency of the unnecessary wave 4 in the surface acoustic wave filter. Therefore, a plurality of wafers 9 are prepared as shown in FIG. Are arranged in a rotationally symmetrical manner, and a plurality of wafers 9 are rotated about the rotation shaft 13 and ground as described above so that grooves 5 in a certain direction are formed in each wafer 9. Therefore, it is possible to reduce the characteristic variation of the individual surface acoustic wave filters.

さらに、図６に示されるごとく、研削ホイル１２を周回方向において分割形成した研削刃１２ａを用いることにより、研削刃１２ａ間にできる空隙部分１２ｂから研削クズが外部に放出でき、さらには流水洗浄をしながらの研削が可能となり、研削クズによる目詰まりや割れを抑制でき生産性を向上できるのである。   Furthermore, as shown in FIG. 6, by using the grinding blade 12a in which the grinding foil 12 is divided and formed in the circumferential direction, grinding scraps can be discharged to the outside from the gap portion 12b formed between the grinding blades 12a. This makes it possible to perform grinding while suppressing clogging and cracking caused by grinding debris and improving productivity.

また、研削工法を用いた場合には図２に示される圧電体基板１の裏面側領域１７に加工変質層が厚く形成される。加工変質層とは加工時の応力により基板の結晶構造が潰れた層を指し、結晶構造が不均一な為、不要波４が乱反射し、その伝搬をさらに抑制される。溝５を形成するにあたっては先に述べたような研削刃１２ａを用いた研削工法の他に研磨工法などが考えられるが、特にこのような弾性表面波フィルタを形成する圧電体基板１に溝を形成するにあたっては、形成時に加工変質層が厚く形成される研削工法を用いることが望ましいものとなる。   When the grinding method is used, a work-affected layer is formed thick on the back surface region 17 of the piezoelectric substrate 1 shown in FIG. The work-affected layer refers to a layer in which the crystal structure of the substrate is crushed by stress during processing. Since the crystal structure is not uniform, the unwanted wave 4 is irregularly reflected and the propagation thereof is further suppressed. In forming the groove 5, a polishing method or the like can be considered in addition to the grinding method using the grinding blade 12 a as described above. In particular, the groove is formed in the piezoelectric substrate 1 that forms such a surface acoustic wave filter. In forming, it is desirable to use a grinding method in which the work-affected layer is formed thick at the time of formation.

なお、この一実施形態においては弾性表面波デバイスの一例として弾性表面波フィルタを挙げて説明したのであるが、本発明はこれに限定されるものではなく、圧電体基板１の底面による不要波４の影響を抑制することが必要となる弾性表面波デバイスに対して適用できるものである。   In this embodiment, the surface acoustic wave filter is described as an example of the surface acoustic wave device. However, the present invention is not limited to this, and the unnecessary wave 4 generated by the bottom surface of the piezoelectric substrate 1 is used. The present invention can be applied to a surface acoustic wave device that needs to suppress the influence of the above.

本発明にかかる弾性表面波デバイスの製造方法は、裏面反射による特性の劣化を抑えることができるという効果を有し、特に携帯電話などのように高性能化が要望される通信機器用途において有用である。   The surface acoustic wave device manufacturing method according to the present invention has an effect of suppressing deterioration of characteristics due to back surface reflection, and is particularly useful in communication equipment applications that require high performance such as cellular phones. is there.

本発明の一実施形態における弾性表面波フィルタを示す斜視図The perspective view which shows the surface acoustic wave filter in one Embodiment of this invention 同弾性表面波フィルタにおける信号経路を示す断面図Sectional view showing signal path in surface acoustic wave filter 同弾性表面波フィルタの下面図Bottom view of the surface acoustic wave filter 同弾性表面波フィルタの製造方法を示す図The figure which shows the manufacturing method of the surface acoustic wave filter 同製造方法における研削工法を示す図Diagram showing the grinding method in the manufacturing method 同研削工法を示す断面図Sectional view showing the grinding method 同研削工法によって形成された溝の状態を示す図The figure which shows the state of the groove formed by the grinding method 他の研削工法を示す図Diagram showing other grinding methods

符号の説明Explanation of symbols

１ 圧電体基板
２ 櫛形トランスデューサ
５ 溝 1 Piezoelectric substrate 2 Comb transducer 5 Groove

Claims (2)

弾性表面波デバイスを形成する圧電体からなるウェハの表面に複数個の弾性表面波デバイスを形成する電極を設ける第１の工程と、前記ウェハの表面に個片分割用のハーフカット溝を設ける第２の工程と、前記ウェハの裏面側を研削することにより個片に分割して前記弾性表面波デバイスを得る第３の工程とを備え、前記第３の工程は自転する研削ホイルに対して前記ウェハを回転させながら裏面を当接させて研削することにより前記ウェハを個片に分割するものであり、前記ウェハを前記研削ホイルの周回面に対して傾斜させて前記ウェハの半分を当接させることにより、前記弾性表面波デバイスの裏面に弾性表面波の伝搬方向に対して交差する方向に複数の溝を並設し、前記隣り合う溝の間隔を一端側から他端側に向けて狭くなるように形成した弾性表面波デバイスの製造方法。 A first step of providing an electrode for forming a plurality of surface acoustic wave devices on a surface of a wafer made of a piezoelectric material forming a surface acoustic wave device; and a step of providing a half-cut groove for dividing a piece on the surface of the wafer. 2 and a third step of obtaining the surface acoustic wave device by dividing the back side of the wafer into pieces by grinding, the third step with respect to the rotating grinding wheel. The wafer is divided into individual pieces by grinding with the back surface abutting while rotating the wafer, and the half of the wafer is brought into abutment by inclining the wafer with respect to the circumferential surface of the grinding foil. narrower that the said juxtaposed a plurality of grooves in a direction intersecting the direction of propagation of surface acoustic waves on the back surface of the surface acoustic wave device, toward the other side the spacing between the adjacent grooves from one end like Method of manufacturing a surface acoustic wave device form. 前記第３の工程において、前記研削ホイルにその周回方向に分割形成した研削刃を用いる請求項１記載の弾性表面波デバイスの製造方法。 The method for manufacturing a surface acoustic wave device according to claim 1, wherein in the third step, a grinding blade formed by dividing the grinding foil in its circumferential direction is used.
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JPS60153616A (en) * 1984-01-24 1985-08-13 Toshiba Corp Manufacture of surface acoustic wave element
JPH02179108A (en) * 1988-12-29 1990-07-12 Japan Radio Co Ltd Method of processing substrate of surface acoustic wave element
JPH06326541A (en) * 1993-05-11 1994-11-25 Seiko Epson Corp Method for dividing surface acoustic wave element
JPH09213662A (en) * 1996-01-31 1997-08-15 Toshiba Corp Method of splitting wafer and method of manufacturing semiconductor device
JPH09309049A (en) * 1996-05-23 1997-12-02 Nippon Steel Corp High-precision grinding method for semiconductor wafer
JPH1170447A (en) * 1997-08-28 1999-03-16 Nippon Seiko Kk Grinding method of surfaces of work
JP2000114903A (en) * 1998-09-30 2000-04-21 Toko Inc Manufacture of surface acoustic wave element

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60153616A (en) * 1984-01-24 1985-08-13 Toshiba Corp Manufacture of surface acoustic wave element
JPH02179108A (en) * 1988-12-29 1990-07-12 Japan Radio Co Ltd Method of processing substrate of surface acoustic wave element
JPH06326541A (en) * 1993-05-11 1994-11-25 Seiko Epson Corp Method for dividing surface acoustic wave element
JPH09213662A (en) * 1996-01-31 1997-08-15 Toshiba Corp Method of splitting wafer and method of manufacturing semiconductor device
JPH09309049A (en) * 1996-05-23 1997-12-02 Nippon Steel Corp High-precision grinding method for semiconductor wafer
JPH1170447A (en) * 1997-08-28 1999-03-16 Nippon Seiko Kk Grinding method of surfaces of work
JP2000114903A (en) * 1998-09-30 2000-04-21 Toko Inc Manufacture of surface acoustic wave element

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