JP4483366B2 - 半導体パッケージおよびその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 56
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 78
- 229910045601 alloy Inorganic materials 0.000 claims description 73
- 239000000956 alloy Substances 0.000 claims description 73
- 238000007747 plating Methods 0.000 claims description 50
- 229910052759 nickel Inorganic materials 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 32
- 238000005219 brazing Methods 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 20
- 238000007789 sealing Methods 0.000 claims description 16
- 229910015153 MoAg Inorganic materials 0.000 claims description 14
- 229910015269 MoCu Inorganic materials 0.000 claims description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 11
- 229910052737 gold Inorganic materials 0.000 claims description 11
- 239000010931 gold Substances 0.000 claims description 11
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 9
- 238000005304 joining Methods 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 description 66
- 239000000969 carrier Substances 0.000 description 22
- 229910052751 metal Inorganic materials 0.000 description 19
- 239000002184 metal Substances 0.000 description 19
- 238000012360 testing method Methods 0.000 description 16
- 238000003466 welding Methods 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 13
- 239000001307 helium Substances 0.000 description 13
- 229910052734 helium Inorganic materials 0.000 description 13
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 13
- 238000003780 insertion Methods 0.000 description 11
- 230000037431 insertion Effects 0.000 description 11
- 229910002555 FeNi Inorganic materials 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- 229910052799 carbon Inorganic materials 0.000 description 8
- 238000005245 sintering Methods 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 238000001746 injection moulding Methods 0.000 description 6
- 229910000833 kovar Inorganic materials 0.000 description 6
- 239000011230 binding agent Substances 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 150000001721 carbon Chemical class 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000006392 deoxygenation reaction Methods 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 229920006324 polyoxymethylene Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229930182556 Polyacetal Natural products 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- -1 polypropylene Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000005394 sealing glass Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/045—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads having an insulating passage through the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02253—Out-coupling of light using lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Lasers (AREA)
Description
まず、平均粒径が1.0μmの85W15Cu複合粉末あるいは混合粉末を、ジェットミル内あるいはボールミル内に投入して平均粒径が0.1〜0.3μmになるまで粉砕した。この場合、微粉化および粉末の球状化を行うとともに、凝集したものの除去を行った。なお、ジェットミルにおいては加圧力が0.1〜1MPaで、回転速度が5000rpmで20分間行った。また、ボールミルにおいては、20〜200時間行った。
(1)実施例
ついで、上述のように作製した母材10(a,b,c,d)と、FeNi合金製のリード端子14を350℃に加熱されたオーブン中に配置した。この後、これらを350℃で30分間加熱処理して、母材10(a,b,c,d)の表面およびリード端子14の表面に酸化処理を施した。この酸化処理により、次工程でのハーメチックガラスとの濡れ性が向上することとなる。
一方、上述した実施例と同様に、母材10(a,b,c,d)と、FeNi合金製のリード端子14を350℃に加熱されたオーブン中に配置した後、これらを350℃で30分間加熱処理して、母材10(a,b,c,d)の表面およびリード端子14の表面に酸化処理を施した。ついで、図6に示すように、周知のメッキ方法により母材10(a,b,c,d)の表面に下地ニッケルメッキ層13を形成した。なお、この下地ニッケルメッキは、スルファミン酸浴やワット浴等の電気メッキ、あるいはNi/B、Ni/P等の無電解メッキのどちらでもよい。この場合、母材10(a,b,c,d)の表面に下地ニッケルメッキ層13を形成した後、熱処理を行って、下地ニッケルメッキ層13と各母材10(a,b,c,d)との密着性を向上させた。
(1)キャップ溶接前
ついで、上述のようにして作製したキャップ溶接前の半導体キャリア10a〜10d,10w〜10zをそれぞれ15個ずつ用いて気密性試験を行った。この気密性試験においては、図7に示すように、ヘリウム(He)リークディテクタ(島津製作所製)20を用い、このリークディテクタ20に形成された試験室22の上部にOリング23を介して、半導体キャリア10a〜10d,10w〜10zを配置した。
一方、キャップ19が溶接されて完成された試料30(半導体キャリア10A〜10D,10W〜10Z)をそれぞれ15個ずつ用いて気密性試験を行った。この気密性試験においては、図8(a)(b)に示すように、これらの試料30(半導体キャリア10A〜10D,10W〜10Z)をそれぞれボンビングチャンバー31内に配置した。この後、このボンビングチャンバー31内にヘリウムガスボンベ32からヘリウムガスを5kg/cm2で2時間充填した。ついで、ボンビングチャンバー31内からこれらの試料30(半導体キャリア10A〜10D,10W〜10Z)を取り出した。
Claims (2)
- 高度の気密状態が求められる半導体素子が基板上に配置され、かつ該基板にハーメチックシールにより複数のリード線が接合されているとともに当該基板に密閉用の蓋体がシールリングを介して接合された半導体パッケージであって、
前記基板はWCu合金、WAg合金、MoCu合金、MoAg合金のいずれかから形成されており、
前記基板と前記複数のリード線は未ニッケルメッキ処理の表面に酸化処理されていてこれらの基板と複数のリード線とはハーメチックシールされており、
前記基板と前記シールリングとは直接ロウ付けにより接合されており、
前記ハーメチックシール後の露出したリード線の表面および前記ロウ付け後の露出したシールリングの表面にはニッケルメッキと金メッキが施されていることを特徴とする半導体パッケージ。 - 高度の気密状態が求められる半導体素子を基板上に配置し、かつ該基板にハーメチックシールにより複数のリード線を接合するとともに当該基板に密閉用の蓋体をシールリングを介して接合する半導体パッケージの製造方法であって、
WCu合金、WAg合金、MoCu合金、MoAg合金のいずれかから形成されたニッケルメッキ処理前の基板およびニッケルメッキ処理前の複数のリード線を加熱処理してこれらの表面を酸化処理する酸化処理工程と、
前記基板に前記複数のリード線をハーメチックシールにより接合するハーメチックシール工程と、
前記基板にロウ付けにより前記シールリングを接合するロウ付け工程と、
前記ハーメチックシール後の露出したリード線の表面および前記ロウ付け後の露出したシールリングの表面にニッケルメッキと金メッキを施すメッキ工程とを備えたことを特徴とする半導体キャリアの製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004089141A JP4483366B2 (ja) | 2004-03-25 | 2004-03-25 | 半導体パッケージおよびその製造方法 |
US11/074,747 US7518205B2 (en) | 2004-03-25 | 2005-03-09 | Semiconductor package and method for manufacturing the same |
CNU2005200073687U CN2842728Y (zh) | 2004-03-25 | 2005-03-22 | 半导体封装 |
CNB2005100591106A CN100350557C (zh) | 2004-03-25 | 2005-03-22 | 半导体封装及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004089141A JP4483366B2 (ja) | 2004-03-25 | 2004-03-25 | 半導体パッケージおよびその製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2005277148A JP2005277148A (ja) | 2005-10-06 |
JP4483366B2 true JP4483366B2 (ja) | 2010-06-16 |
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JP2004089141A Expired - Fee Related JP4483366B2 (ja) | 2004-03-25 | 2004-03-25 | 半導体パッケージおよびその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7518205B2 (ja) |
JP (1) | JP4483366B2 (ja) |
CN (2) | CN2842728Y (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5036280B2 (ja) * | 2006-11-10 | 2012-09-26 | エヌイーシー ショット コンポーネンツ株式会社 | 気密端子およびその製造方法 |
JP5793679B2 (ja) * | 2009-12-18 | 2015-10-14 | パナソニックIpマネジメント株式会社 | 赤外線センサモジュール |
JP5664248B2 (ja) * | 2010-03-17 | 2015-02-04 | 株式会社リコー | 面発光レーザモジュール、光走査装置及び画像形成装置 |
DE102011012262A1 (de) * | 2011-02-24 | 2012-08-30 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
JP6119108B2 (ja) * | 2012-04-10 | 2017-04-26 | セイコーエプソン株式会社 | 電子デバイス、電子機器、ベース基板の製造方法および電子デバイスの製造方法 |
DE102012103257A1 (de) * | 2012-04-16 | 2013-10-17 | Osram Opto Semiconductors Gmbh | Laserdiodenvorrichtung |
US8897327B2 (en) | 2012-04-16 | 2014-11-25 | Osram Opto Semiconductors Gmbh | Laser diode devices |
CN102856470A (zh) * | 2012-04-20 | 2013-01-02 | 陕西唐华能源有限公司 | Led芯片封装基板结构 |
US20140238726A1 (en) * | 2013-02-28 | 2014-08-28 | Cooper Technologies Company | External moisture barrier package for circuit board electrical component |
CN103268870B (zh) * | 2013-06-17 | 2016-03-02 | 浙江长兴电子厂有限公司 | 玻璃封接电子元器件的封装结构 |
CA2918315A1 (en) * | 2013-07-23 | 2015-01-29 | Nuvera Fuel Cells, Inc. | Dynamic decompression control for high pressure seals |
JP6421595B2 (ja) * | 2014-12-26 | 2018-11-14 | 日立金属株式会社 | 気密封止用蓋材、気密封止用蓋材の製造方法および電子部品収納パッケージ |
US10319654B1 (en) * | 2017-12-01 | 2019-06-11 | Cubic Corporation | Integrated chip scale packages |
CN110854669A (zh) * | 2019-12-10 | 2020-02-28 | 武汉优信技术股份有限公司 | 一种to管座封装结构及其制造方法 |
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JPH0680873B2 (ja) * | 1986-07-11 | 1994-10-12 | 株式会社東芝 | 回路基板 |
US5036584A (en) * | 1989-06-13 | 1991-08-06 | Texas Instruments Incorporated | Method of manufacture of copper cored enclosures for hybrid circuits |
JPH07333055A (ja) * | 1994-06-03 | 1995-12-22 | Matsushita Electric Ind Co Ltd | 光検出器 |
JPH107441A (ja) | 1996-06-20 | 1998-01-13 | Nippon Seiki Co Ltd | 金属ガラス接合体 |
CN1099441C (zh) * | 1997-07-02 | 2003-01-22 | 住友电木株式会社 | 半导体密封用的环氧树脂组合物和半导体器件 |
US6844606B2 (en) * | 2002-02-04 | 2005-01-18 | Delphi Technologies, Inc. | Surface-mount package for an optical sensing device and method of manufacture |
JP3838178B2 (ja) * | 2002-08-29 | 2006-10-25 | ソニー株式会社 | 半導体装置 |
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2004
- 2004-03-25 JP JP2004089141A patent/JP4483366B2/ja not_active Expired - Fee Related
-
2005
- 2005-03-09 US US11/074,747 patent/US7518205B2/en not_active Expired - Fee Related
- 2005-03-22 CN CNU2005200073687U patent/CN2842728Y/zh not_active Expired - Lifetime
- 2005-03-22 CN CNB2005100591106A patent/CN100350557C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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CN100350557C (zh) | 2007-11-21 |
JP2005277148A (ja) | 2005-10-06 |
US20050214979A1 (en) | 2005-09-29 |
CN2842728Y (zh) | 2006-11-29 |
US7518205B2 (en) | 2009-04-14 |
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