JP4469737B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4469737B2 JP4469737B2 JP2005034541A JP2005034541A JP4469737B2 JP 4469737 B2 JP4469737 B2 JP 4469737B2 JP 2005034541 A JP2005034541 A JP 2005034541A JP 2005034541 A JP2005034541 A JP 2005034541A JP 4469737 B2 JP4469737 B2 JP 4469737B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 238000005498 polishing Methods 0.000 claims description 113
- 239000000126 substance Substances 0.000 claims description 78
- 239000007788 liquid Substances 0.000 claims description 43
- 238000004140 cleaning Methods 0.000 claims description 37
- 239000000243 solution Substances 0.000 claims description 29
- 239000004744 fabric Substances 0.000 claims description 23
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- 238000000034 method Methods 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 230000004888 barrier function Effects 0.000 claims description 15
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- 239000008155 medical solution Substances 0.000 claims description 8
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- 239000000428 dust Substances 0.000 description 10
- 238000007517 polishing process Methods 0.000 description 9
- 230000001590 oxidative effect Effects 0.000 description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- 239000000654 additive Substances 0.000 description 6
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
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- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
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- 239000007864 aqueous solution Substances 0.000 description 3
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- 229910021641 deionized water Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- -1 acetylene glycol Chemical compound 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000008119 colloidal silica Substances 0.000 description 2
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- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 244000132059 Carica parviflora Species 0.000 description 1
- 235000014653 Carica parviflora Nutrition 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
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- 235000004279 alanine Nutrition 0.000 description 1
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- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- PLUHAVSIMCXBEX-UHFFFAOYSA-N azane;dodecyl benzenesulfonate Chemical compound N.CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 PLUHAVSIMCXBEX-UHFFFAOYSA-N 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 239000011246 composite particle Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 239000011268 mixed slurry Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
- 229920005614 potassium polyacrylate Polymers 0.000 description 1
- HSJXWMZKBLUOLQ-UHFFFAOYSA-M potassium;2-dodecylbenzenesulfonate Chemical compound [K+].CCCCCCCCCCCCC1=CC=CC=C1S([O-])(=O)=O HSJXWMZKBLUOLQ-UHFFFAOYSA-M 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- LOAUVZALPPNFOQ-UHFFFAOYSA-N quinaldic acid Chemical compound C1=CC=CC2=NC(C(=O)O)=CC=C21 LOAUVZALPPNFOQ-UHFFFAOYSA-N 0.000 description 1
- GJAWHXHKYYXBSV-UHFFFAOYSA-N quinolinic acid Chemical compound OC(=O)C1=CC=CN=C1C(O)=O GJAWHXHKYYXBSV-UHFFFAOYSA-N 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
本発明の他の態様にかかる半導体装置の製造方法は、半導体基板上に設けられ凹部を有する絶縁膜上に導電性膜を堆積して、被処理膜を形成する工程、酸化剤を含有せずに研磨粒子を含む第1の薬液と酸化剤を含む第2の薬液とを研磨布上に供給しつつ、前記絶縁膜が露出するまで前記被処理膜を前記研磨布に当接させて研磨する工程、および、前記研磨工程に引き続いて、前記第2の薬液の供給を停止する一方で前記第1の薬液を前記研磨布上に供給しつつ、前記研磨布への前記被処理膜の荷重を前記研磨工程での研磨荷重よりも低減して、前記被処理膜および露出した前記絶縁膜を前記研磨布に前記第1の薬液を介して削りかすの発生なしに摺接させる工程を具備することを特徴とする。
図1は、本発明の一実施形態にかかる半導体装置の製造方法における研磨工程の状態を表わす概略図である。
図6および図7を参照して、本実施形態を説明する。
前述の実施形態1と同様の手法により、図7に示すようにバリアメタル32表面を露出した。絶縁膜31、バリアメタル32および配線材料膜33は、いずれも前述と同様の材料を用いて同様の膜厚で形成した。
14…第1の供給口; 15…第2の供給口; 16…ドレッサー
17…第1の薬液; 18…第2の薬液; 19…スラリー; V1…第1のバルブ
V2…第2のバルブ; 20…筐体; 21…リテーナリング; 22…加圧シート
23…メンブレン; 24…加圧チャンバー室; 25…空気導管
26…エアバック領域; 27…チャッキングプレート; 30…半導体基板
31…絶縁膜; 32…バリアメタル; 33…配線材料膜; 34…導電性膜
35…溝。
Claims (5)
- 半導体基板上に設けられ凹部を有する絶縁膜上に導電性膜を堆積して、被処理膜を形成する工程、
酸化剤を含有せずに研磨粒子を含む第1の薬液と酸化剤を含む第2の薬液とを研磨布上に供給しつつ、前記被処理膜を前記研磨布に当接させて、前記被処理膜を研磨する工程、および
前記研磨工程に引き続いて、前記第2の薬液の供給を停止する一方で前記第1の薬液を供給して、前記研磨工程での研磨荷重よりも小さい荷重で前記被処理膜の表面を削りかすの発生なしに洗浄研磨する工程
を具備することを特徴とする半導体装置の製造方法。 - 前記導電性膜は、バリアメタルを介して設けられた配線材料膜を含むことを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記研磨工程は、前記配線材料膜を前記凹部に残置しつつ前記バリアメタルの表面を露出する工程であることを特徴とする請求項2に記載の半導体装置の製造方法。
- 前記研磨工程は、前記絶縁膜上の前記バリアメタルを除去して、前記絶縁膜の表面を露出する工程であることを特徴とする請求項2に記載の半導体装置の製造方法。
- 半導体基板上に設けられ凹部を有する絶縁膜上に導電性膜を堆積して、被処理膜を形成する工程、
酸化剤を含有せずに研磨粒子を含む第1の薬液と酸化剤を含む第2の薬液とを研磨布上に供給しつつ、前記絶縁膜が露出するまで前記被処理膜を前記研磨布に当接させて研磨する工程、および
前記研磨工程に引き続いて、前記第2の薬液の供給を停止する一方で前記第1の薬液を前記研磨布上に供給しつつ、前記研磨布への前記被処理膜の荷重を前記研磨工程での研磨荷重よりも低減して、前記被処理膜および露出した前記絶縁膜を前記研磨布に前記第1の薬液を介して削りかすの発生なしに摺接させる工程
を具備することを特徴とする半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005034541A JP4469737B2 (ja) | 2005-02-10 | 2005-02-10 | 半導体装置の製造方法 |
US11/296,483 US7465668B2 (en) | 2005-02-10 | 2005-12-08 | Method of manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005034541A JP4469737B2 (ja) | 2005-02-10 | 2005-02-10 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2006222285A JP2006222285A (ja) | 2006-08-24 |
JP4469737B2 true JP4469737B2 (ja) | 2010-05-26 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2005034541A Expired - Fee Related JP4469737B2 (ja) | 2005-02-10 | 2005-02-10 | 半導体装置の製造方法 |
Country Status (2)
Country | Link |
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US (1) | US7465668B2 (ja) |
JP (1) | JP4469737B2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070049180A1 (en) * | 2005-08-24 | 2007-03-01 | Jsr Corporation | Aqueous dispersion for chemical mechanical polishing, kit for preparing the aqueous dispersion, chemical mechanical polishing process, and process for producing semiconductor devices |
KR100725803B1 (ko) * | 2006-12-05 | 2007-06-08 | 제일모직주식회사 | 실리콘 웨이퍼 최종 연마용 슬러리 조성물 및 이를 이용한실리콘 웨이퍼 최종 연마 방법 |
JP2014011408A (ja) * | 2012-07-02 | 2014-01-20 | Toshiba Corp | 半導体装置の製造方法および研磨装置 |
JP2016004903A (ja) | 2014-06-17 | 2016-01-12 | 株式会社東芝 | 研磨装置、研磨方法、及び半導体装置の製造方法 |
US9902038B2 (en) | 2015-02-05 | 2018-02-27 | Toshiba Memory Corporation | Polishing apparatus, polishing method, and semiconductor manufacturing method |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
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US6059920A (en) * | 1996-02-20 | 2000-05-09 | Kabushiki Kaisha Toshiba | Semiconductor device polishing apparatus having improved polishing liquid supplying apparatus, and polishing liquid supplying method |
TW377467B (en) * | 1997-04-22 | 1999-12-21 | Sony Corp | Polishing system, polishing method, polishing pad, and method of forming polishing pad |
US6432828B2 (en) * | 1998-03-18 | 2002-08-13 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
JP3440826B2 (ja) | 1998-06-03 | 2003-08-25 | 株式会社日立製作所 | 半導体装置および半導体基板の研磨方法 |
JP2000237952A (ja) * | 1999-02-19 | 2000-09-05 | Hitachi Ltd | 研磨装置および半導体装置の製造方法 |
JP3450247B2 (ja) * | 1999-12-28 | 2003-09-22 | Necエレクトロニクス株式会社 | 金属配線形成方法 |
US6455432B1 (en) * | 2000-12-05 | 2002-09-24 | United Microelectronics Corp. | Method for removing carbon-rich particles adhered on a copper surface |
US6530824B2 (en) * | 2001-03-09 | 2003-03-11 | Rodel Holdings, Inc. | Method and composition for polishing by CMP |
US20030060145A1 (en) * | 2001-08-23 | 2003-03-27 | Li Youlin J. | Multi-step polishing system and process of using same |
JP2003188254A (ja) * | 2001-12-18 | 2003-07-04 | Hitachi Ltd | 半導体装置の製造方法および半導体装置 |
JP4560278B2 (ja) | 2003-05-09 | 2010-10-13 | Jsr株式会社 | 非化学機械研磨用水溶液、研磨剤セット及び半導体装置を製造する製造方法 |
-
2005
- 2005-02-10 JP JP2005034541A patent/JP4469737B2/ja not_active Expired - Fee Related
- 2005-12-08 US US11/296,483 patent/US7465668B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2006222285A (ja) | 2006-08-24 |
US7465668B2 (en) | 2008-12-16 |
US20060175296A1 (en) | 2006-08-10 |
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