JP4454606B2 - 蒸発源 - Google Patents
蒸発源 Download PDFInfo
- Publication number
- JP4454606B2 JP4454606B2 JP2006232615A JP2006232615A JP4454606B2 JP 4454606 B2 JP4454606 B2 JP 4454606B2 JP 2006232615 A JP2006232615 A JP 2006232615A JP 2006232615 A JP2006232615 A JP 2006232615A JP 4454606 B2 JP4454606 B2 JP 4454606B2
- Authority
- JP
- Japan
- Prior art keywords
- heater
- crucible
- vapor deposition
- meandering
- evaporation source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000008020 evaporation Effects 0.000 title claims description 23
- 238000001704 evaporation Methods 0.000 title claims description 23
- 239000000463 material Substances 0.000 claims description 26
- 238000007740 vapor deposition Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 13
- 239000007921 spray Substances 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 238000009826 distribution Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Description
110 ハウジング、
120 るつぼ、
130 従来のヒータ、
140 噴射ノズル、
142 厚さ測定器、
180 第1の熱遮断板、
190 第2の熱遮断板、
230、330 ヒータ。
Claims (3)
- ハウジングと、
蒸着物質を収容し、前記ハウジングに内蔵されるるつぼと、
前記るつぼを加熱するために前記るつぼの上面と下面のうちの少なくとも一箇所に設置される板状のヒータであって、蛇行して伸びる長さ方向の中央部において蛇行する回数が蛇行して伸びる長さ方向の両端部において蛇行する回数よりも少なく、蛇行によって形成される間隙が前記中央部よりも前記両端部において狭くなるように形成されるヒータと、
前記るつぼで蒸発させられた蒸着物質を基板へ噴射するための複数の噴射ノズルを含むノズル部と、を含み、
前記複数の噴射ノズルは、前記蒸着物質が噴射される方向を含む面と前記ヒータが設置される面とが平行となるように、前記ヒータが蛇行して伸びる長さ方向に配列される蒸発源。 - 前記中央部の間隙の寸法aの、前記両端部の間隙の寸法bに対する割合であるa/bが1.5〜5.0であることを特徴とする請求項1に記載の蒸発源。
- 前記ヒータの間隙は、前記ヒータの両端部から中央部に向かって漸次的に広くなることを特徴とする請求項1または請求項2に記載の蒸発源。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050080280A KR100645688B1 (ko) | 2005-08-30 | 2005-08-30 | 증착장치의 히터 및 이를 채용한 증발원 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007063669A JP2007063669A (ja) | 2007-03-15 |
JP4454606B2 true JP4454606B2 (ja) | 2010-04-21 |
Family
ID=37654529
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006232615A Expired - Fee Related JP4454606B2 (ja) | 2005-08-30 | 2006-08-29 | 蒸発源 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20070119849A1 (ja) |
JP (1) | JP4454606B2 (ja) |
KR (1) | KR100645688B1 (ja) |
CN (1) | CN1924080A (ja) |
TW (1) | TWI349719B (ja) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101106289B1 (ko) | 2006-08-04 | 2012-01-18 | 순천향대학교 산학협력단 | 증착 공정을 위한 선형 증착 소스 |
WO2008016247A1 (en) * | 2006-08-04 | 2008-02-07 | Soonchunhyang University Industry Academy Cooperation Foundation | Linear deposition sources for deposition processes |
JP4468474B1 (ja) * | 2008-12-24 | 2010-05-26 | 三菱重工業株式会社 | 真空蒸着装置及び温度調整方法 |
KR101156430B1 (ko) * | 2009-09-25 | 2012-06-18 | 삼성모바일디스플레이주식회사 | 증착 소스 및 유기 발광 소자 제조 방법 |
KR101186609B1 (ko) * | 2010-04-23 | 2012-09-27 | (주)알파플러스 | 열복사 가열형 선형 증발원 장치 |
KR101209107B1 (ko) | 2010-06-23 | 2012-12-06 | (주)알파플러스 | 소스 튐 방지용 구조물을 구비한 증발원 장치 |
KR101456657B1 (ko) * | 2012-12-26 | 2014-11-04 | 주식회사 선익시스템 | 증발원 가열 장치 |
KR101390413B1 (ko) * | 2012-12-27 | 2014-04-30 | 주식회사 선익시스템 | 증발원 가열 장치 |
KR101481094B1 (ko) * | 2012-12-28 | 2015-01-14 | 주식회사 선익시스템 | 증발원 가열 장치 |
KR102052074B1 (ko) | 2013-04-04 | 2019-12-05 | 삼성디스플레이 주식회사 | 증착 장치, 이를 이용한 박막 형성 방법 및 유기 발광 표시 장치 제조 방법 |
KR20150004646A (ko) * | 2013-07-03 | 2015-01-13 | 삼성디스플레이 주식회사 | 증착원 |
CN103805954B (zh) * | 2014-02-20 | 2016-01-13 | 江西沃格光电股份有限公司 | 磁控溅射镀膜*** |
WO2016035236A1 (ja) * | 2014-09-05 | 2016-03-10 | Jfeスチール株式会社 | フェライト系ステンレス冷延鋼板 |
CN104404451A (zh) * | 2014-12-16 | 2015-03-11 | 合肥鑫晟光电科技有限公司 | 蒸镀源和蒸镀装置 |
WO2017033053A1 (en) * | 2015-08-21 | 2017-03-02 | Flisom Ag | Homogeneous linear evaporation source |
CN205443432U (zh) * | 2016-04-07 | 2016-08-10 | 鄂尔多斯市源盛光电有限责任公司 | 一种线性蒸发源、蒸发源***及蒸镀装置 |
WO2018024510A1 (en) * | 2016-08-05 | 2018-02-08 | Flisom Ag | Homogeneous linear evaporation source with heater |
CN109423631B (zh) * | 2017-08-31 | 2020-09-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | 气相沉积均匀加热装置及气相沉积炉 |
CN109423627B (zh) * | 2017-08-31 | 2021-02-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | 圆盘类零件一次性全表面气相沉积炉 |
CN108754429B (zh) * | 2018-08-28 | 2020-11-06 | 京东方科技集团股份有限公司 | 一种蒸发源 |
KR102227547B1 (ko) * | 2019-03-13 | 2021-03-15 | 주식회사 선익시스템 | 박스형 선형 증발원용 도가니 및 선형 증발원 |
KR102221552B1 (ko) * | 2020-07-15 | 2021-03-02 | 삼성디스플레이 주식회사 | 증착원 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
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US2371696A (en) * | 1943-07-17 | 1945-03-20 | Cities Service Oil Co | Helical electric immersion heater |
US3289139A (en) * | 1964-02-24 | 1966-11-29 | Dale Electronics | Film resistance unit |
US3678249A (en) * | 1970-10-21 | 1972-07-18 | Arc O Vec Inc | Heater element |
DE2347090C3 (de) * | 1973-09-19 | 1979-01-04 | Hasco-Normalien Hasenclever & Co, 5880 Luedenscheid | Anordnung eines Widerstands-Heizelements in einer Bohrung eines zu beheizenden Werkstücks |
US3912908A (en) * | 1974-11-12 | 1975-10-14 | Us Energy | Electric cartridge-type heater for producing a given non-uniform axial power distribution |
JPS5591967A (en) * | 1978-12-30 | 1980-07-11 | Nippon Steel Corp | One-side hot dipping method for steel strip |
US4649368A (en) * | 1985-06-03 | 1987-03-10 | National Element, Inc. | Electrical resistance heating element |
JPH0529067A (ja) * | 1991-07-25 | 1993-02-05 | Rohm Co Ltd | 加熱体の構造及びoa機器の加熱装置 |
US5412181A (en) * | 1993-12-27 | 1995-05-02 | The B. F. Goodrich Company | Variable power density heating using stranded resistance wire |
JPH09105677A (ja) * | 1995-10-12 | 1997-04-22 | Isuzu Ceramics Kenkyusho:Kk | セラミックシース型部品及びその製造方法 |
US6259193B1 (en) * | 1998-06-08 | 2001-07-10 | General Electric Company | Emissive filament and support structure |
US20030221620A1 (en) * | 2002-06-03 | 2003-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Vapor deposition device |
KR100490537B1 (ko) * | 2002-07-23 | 2005-05-17 | 삼성에스디아이 주식회사 | 가열용기와 이를 이용한 증착장치 |
US7196295B2 (en) * | 2003-11-21 | 2007-03-27 | Watlow Electric Manufacturing Company | Two-wire layered heater system |
-
2005
- 2005-08-30 KR KR1020050080280A patent/KR100645688B1/ko not_active IP Right Cessation
-
2006
- 2006-08-24 TW TW095131095A patent/TWI349719B/zh not_active IP Right Cessation
- 2006-08-29 JP JP2006232615A patent/JP4454606B2/ja not_active Expired - Fee Related
- 2006-08-30 US US11/514,313 patent/US20070119849A1/en not_active Abandoned
- 2006-08-30 CN CNA2006101277106A patent/CN1924080A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
CN1924080A (zh) | 2007-03-07 |
TW200710268A (en) | 2007-03-16 |
JP2007063669A (ja) | 2007-03-15 |
KR100645688B1 (ko) | 2006-11-14 |
US20070119849A1 (en) | 2007-05-31 |
TWI349719B (en) | 2011-10-01 |
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