JP4446021B2 - ヘテロ接合素子の制御方法 - Google Patents
ヘテロ接合素子の制御方法 Download PDFInfo
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- JP4446021B2 JP4446021B2 JP2004252809A JP2004252809A JP4446021B2 JP 4446021 B2 JP4446021 B2 JP 4446021B2 JP 2004252809 A JP2004252809 A JP 2004252809A JP 2004252809 A JP2004252809 A JP 2004252809A JP 4446021 B2 JP4446021 B2 JP 4446021B2
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Description
T. Kimura et al., "Magnetic control of ferroelectric polarization", Nature Vol.426, pp.55-58 (2003) N. Hur et al., "Electric polarization reversal and memory in a multiferroic material induced by magnetic fields", Nature Vol.429, pp.392-395 (2004) M. Yamanouchi et al., "Current-induced domain-wall switching in a ferromagnetic semiconductor structure", Nature Vol.428, pp.539-542 (2004) K. T. McCarthy et al., "Magnetocapacitance: Probe of Spin-Dependent Potentials", Phys. Rev. Lett. Vol.90, pp.117201-1-117201-4 (2003)
1B…ヘテロ接合素子、61、62…n型のTi酸化物結晶、66…第1電極、67…第3電極、70…p型のMn酸化物結晶、75…第2電極。
Claims (3)
- 電子がドープされた遷移金属酸化物からなるn型の第1酸化物結晶と、
正孔がドープされた遷移金属酸化物であるLa 1−x Sr x MnO 3−δ 結晶からなり、前記第1酸化物結晶とヘテロ接合を形成するp型の第2酸化物結晶とを備えるヘテロ接合素子を用い、
前記第1酸化物結晶及び前記第2酸化物結晶に対して所定の方向に磁場を印加することによって、前記ヘテロ接合面における空乏層の厚さを制御することを特徴とするヘテロ接合素子の制御方法。 - 前記第1酸化物結晶は、n型不純物によって電子がドープされたTi酸化物結晶からなることを特徴とする請求項1記載のヘテロ接合素子の制御方法。
- 前記ヘテロ接合素子は、前記第1酸化物結晶に電気的に接続された第1電極、及び前記第2酸化物結晶に電気的に接続された第2電極を備えることを特徴とする請求項1または2記載のヘテロ接合素子の制御方法。
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JP2004252809A JP4446021B2 (ja) | 2004-08-31 | 2004-08-31 | ヘテロ接合素子の制御方法 |
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JP2004252809A JP4446021B2 (ja) | 2004-08-31 | 2004-08-31 | ヘテロ接合素子の制御方法 |
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JP2006073629A JP2006073629A (ja) | 2006-03-16 |
JP4446021B2 true JP4446021B2 (ja) | 2010-04-07 |
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US8778513B2 (en) | 2011-04-14 | 2014-07-15 | Fuji Electric Co., Ltd. | Perovskite manganese oxide thin film |
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