JP4440084B2 - 磁気ramの特性分析装置およびその分析方法 - Google Patents
磁気ramの特性分析装置およびその分析方法 Download PDFInfo
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- JP4440084B2 JP4440084B2 JP2004339098A JP2004339098A JP4440084B2 JP 4440084 B2 JP4440084 B2 JP 4440084B2 JP 2004339098 A JP2004339098 A JP 2004339098A JP 2004339098 A JP2004339098 A JP 2004339098A JP 4440084 B2 JP4440084 B2 JP 4440084B2
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- magnetic ram
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/44—Indication or identification of errors, e.g. for repair
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Semiconductor Memories (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Investigating Or Analyzing Materials By The Use Of Magnetic Means (AREA)
Description
12 磁場発生部
13 プローブカード
14 マトリックススイッチ
15 ソース測定ユニット
16 分析ユニット
17 電源供給部
18 磁場測定部
19 単位セル
20 MRAMアレイ
Claims (11)
- 磁気RAMの特性分析装置において、
磁気RAMが装着される磁気RAM載置部と、
前記磁気RAM載置部の周囲に形成されて、前記磁気RAM載置部に装着される磁気RAMに外部磁場を印加する磁場印加部と、
前記磁気RAM載置部に装着される磁気RAM素子の単位セルを、順次、特定するセルアドレッシングユニットと、
前記セルアドレッシングユニットにより特定される磁気RAM単位セルに、内部磁場を印加しながら前記磁気RAM単位セルの抵抗値を測定するソース測定ユニットと、
前記測定された各磁気RAM単位セルの抵抗値に関する情報を保存して分析する分析ユニットと、を含み、測定結果を分析して前記磁気RAMのスイッチングフィールドを抽出することを特徴とする磁気RAMの特性分析装置。 - 前記ソース測定ユニットは、
前記セルアドレッシングユニットにより特定される磁気RAM単位セルに、内部磁場を印加する内部磁場印加部と、
前記内部磁場印加部により内部磁場が印加された磁気RAM単位セルの抵抗値を測定する測定部と、を含むことを特徴とする請求項1に記載の磁気RAMの特性分析装置。 - 前記セルアドレッシングユニットは、
前記磁気RAM載置部に装着される磁気RAMの特定の磁気RAM単位セルを指定するマトリックススイッチと、
前記磁気RAMの対応する位置に装着されて前記磁気RAM単位セルに電源を供給するか、またはデータ値を読み出すプローブカード部と、を含むことを特徴とする請求項1に記載の磁気RAMの特性分析装置。 - 磁気RAMの特性分析方法において、
(a)磁気RAMアレイに磁場を印加する段階と、
(b)磁気RAMアレイから分析対象の磁気RAM単位セルを選択する段階と、
(c)前記選択された磁気RAM単位セルに磁場を印加する段階と、
(d)前記選択された磁気RAM単位セルの抵抗値を測定して保存する段階と、
(e)前記磁気RAM単位セルに印加する磁場の強さを変化させて各磁場の強さによる前記磁気RAM単位セルの抵抗値を測定する段階と、
(f)前記磁気RAMアレイを構成する磁気RAM単位セル全体に対して前記(b)段階ないし(e)段階を行う段階と、を含み、測定結果を分析して前記磁気RAMのスイッチングフィールドを抽出することを特徴とする磁気RAMの特性分析方法。 - 前記(a)段階は、
予め入力された磁気RAMアレイのアドレス情報により、セルアドレッシングユニットで分析対象の磁気RAM単位セルを選択することを特徴とする請求項4に記載の磁気RAMの特性分析方法。 - 前記(b)段階は、
ソース測定ユニットにより前記選択された磁気RAM単位セルに電圧を印加して内部磁場を形成させることを特徴とする請求項4に記載の磁気RAMの特性分析方法。 - 前記(c)段階は、
選択された磁気RAM単位セルの情報貯蔵部に位置したプローブカードの探針によりそのデータ値を得てソース測定ユニットで抵抗値を測定することを特徴とする請求項4に記載の磁気RAMの特性分析方法。 - 磁気RAMの特性分析方法において、
(a)磁気RAMアレイに磁場を印加する段階と、
(b)磁気RAMアレイから分析対象の磁気RAM単位セルを選択する段階と、
(c)前記選択された磁気RAM単位セルに磁場を印加する段階と、
(d)前記選択された磁気RAM単位セルの抵抗値を測定して保存する段階と、
(e)前記磁気RAMアレイを構成する残りの全体磁気RAM単位セルに対して前記(b)段階ないし(d)段階を行う段階と、
(f)前記磁気RAMアレイを構成する磁気RAM単位セル全体に対して前記磁場の強さを変化させて前記(b)段階ないし(e)段階を行う段階と、を含み、測定結果を分析して前記磁気RAMのスイッチングフィールドを抽出することを特徴とする磁気RAMの特性分析方法。 - 前記(a)段階は、
予め入力された磁気RAMアレイのアドレス情報により、セルアドレッシングユニットで分析対象の磁気RAM単位セルを選択することを特徴とする請求項8に記載の磁気RAMの特性分析方法。 - 前記(b)段階は、
ソース測定ユニットにより前記選択された磁気RAM単位セルに電圧を印加して内部磁場を形成させることを特徴とする請求項9に記載の磁気RAMの特性分析方法。 - 前記(c)段階は、
選択された磁気RAM単位セルの情報貯蔵部に位置したプローブカードの探針によりそのデータ値を得てソース測定ユニットで抵抗値を測定することを特徴とする請求項9に記載の磁気RAMの特性分析方法。
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KR1020030083614A KR100988087B1 (ko) | 2003-11-24 | 2003-11-24 | Mram 특성 분석 장치 및 그 분석 방법 |
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JP2005166243A JP2005166243A (ja) | 2005-06-23 |
JP4440084B2 true JP4440084B2 (ja) | 2010-03-24 |
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US (1) | US7165197B2 (ja) |
EP (1) | EP1542236B1 (ja) |
JP (1) | JP4440084B2 (ja) |
KR (1) | KR100988087B1 (ja) |
CN (1) | CN1622221B (ja) |
DE (1) | DE602004016719D1 (ja) |
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WO2010038823A1 (ja) * | 2008-10-02 | 2010-04-08 | 日本電気株式会社 | 磁気抵抗記憶装置のスクリーニング方法、及び、磁気抵抗記憶装置 |
US9035671B2 (en) | 2011-07-06 | 2015-05-19 | Everspin Technologies, Inc. | Probe card and method for testing magnetic sensors |
US20130191048A1 (en) * | 2012-01-24 | 2013-07-25 | Qualcomm Incorporated | Method and device for estimating damage to a magnetic tunnel junction (mtj) element |
US9368232B2 (en) | 2013-03-07 | 2016-06-14 | Qualcomm Incorporated | Magnetic automatic test equipment (ATE) memory tester device and method employing temperature control |
KR102152774B1 (ko) | 2013-03-07 | 2020-09-07 | 삼성전자 주식회사 | 반도체 소자 시뮬레이션 시스템 및 이를 이용한 시뮬레이션 방법 |
US9159455B2 (en) | 2013-12-21 | 2015-10-13 | Qualcomm Incorporated | Data retention error detection system |
US9678179B2 (en) | 2014-03-13 | 2017-06-13 | Kabushiki Kaisha Toshiba | Tester for testing magnetic memory |
WO2016018503A1 (en) * | 2014-07-30 | 2016-02-04 | University Of South Florida | Magnetic memory physically unclonable functions |
CN105070314A (zh) * | 2015-08-24 | 2015-11-18 | 西安电子科技大学宁波信息技术研究院 | 一种用于提高自旋磁随机存储器读取可靠性的电路 |
EP3388849B1 (en) * | 2017-04-11 | 2022-06-08 | Karlsruher Institut für Technologie | Magnetic probe based test method for spintronic technologies |
KR102408685B1 (ko) * | 2017-10-16 | 2022-06-15 | 삼성전자주식회사 | 반도체 소자의 제조를 위한 공정 제어 방법 및 시스템 |
US10573364B1 (en) * | 2018-12-13 | 2020-02-25 | Nxp Usa, Inc. | Magnetic disturb diagnostic system for MRAM |
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US6275411B1 (en) * | 1993-07-23 | 2001-08-14 | Nonvolatile Electronics, Incorporated | Spin dependent tunneling memory |
JP3910372B2 (ja) | 2000-03-03 | 2007-04-25 | インターナショナル・ビジネス・マシーンズ・コーポレーション | ストレージ・システム及び書き込み方法 |
US6504779B2 (en) | 2001-05-14 | 2003-01-07 | Hewlett-Packard Company | Resistive cross point memory with on-chip sense amplifier calibration method and apparatus |
US7262064B2 (en) * | 2001-10-12 | 2007-08-28 | Sony Corporation | Magnetoresistive effect element, magnetic memory element magnetic memory device and manufacturing methods thereof |
US6646911B2 (en) * | 2001-10-26 | 2003-11-11 | Mitsubishi Denki Kabushiki Kaisha | Thin film magnetic memory device having data read current tuning function |
US6606262B2 (en) * | 2002-01-10 | 2003-08-12 | Hewlett-Packard Development Company, L.P. | Magnetoresistive random access memory (MRAM) with on-chip automatic determination of optimized write current method and apparatus |
US6762952B2 (en) * | 2002-05-01 | 2004-07-13 | Hewlett-Packard Development Company, L.P. | Minimizing errors in a magnetoresistive solid-state storage device |
JP3808799B2 (ja) * | 2002-05-15 | 2006-08-16 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
US6538940B1 (en) * | 2002-09-26 | 2003-03-25 | Motorola, Inc. | Method and circuitry for identifying weak bits in an MRAM |
US6909631B2 (en) * | 2003-10-02 | 2005-06-21 | Freescale Semiconductor, Inc. | MRAM and methods for reading the MRAM |
JP4170108B2 (ja) * | 2003-02-20 | 2008-10-22 | 株式会社ルネサステクノロジ | 磁気記憶装置 |
US6999339B2 (en) * | 2003-04-22 | 2006-02-14 | Micron Technology, Inc. | Integrated circuit including sensor to sense environmental data, method of compensating an MRAM integrated circuit for the effects of an external magnetic field, MRAM integrated circuit, and method of testing |
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US6894938B2 (en) * | 2003-10-03 | 2005-05-17 | Hewlett-Packard Development Company, L.P. | System and method of calibrating a read circuit in a magnetic memory |
US7286421B2 (en) * | 2003-10-28 | 2007-10-23 | International Business Machines Corporation | Active compensation for operating point drift in MRAM write operation |
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2003
- 2003-11-24 KR KR1020030083614A patent/KR100988087B1/ko active IP Right Grant
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2004
- 2004-11-24 CN CN2004100953600A patent/CN1622221B/zh active Active
- 2004-11-24 US US10/995,216 patent/US7165197B2/en active Active
- 2004-11-24 DE DE602004016719T patent/DE602004016719D1/de active Active
- 2004-11-24 JP JP2004339098A patent/JP4440084B2/ja active Active
- 2004-11-24 EP EP04257268A patent/EP1542236B1/en active Active
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Publication number | Publication date |
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EP1542236A3 (en) | 2006-08-02 |
EP1542236A2 (en) | 2005-06-15 |
CN1622221A (zh) | 2005-06-01 |
EP1542236B1 (en) | 2008-09-24 |
KR20050049858A (ko) | 2005-05-27 |
DE602004016719D1 (de) | 2008-11-06 |
KR100988087B1 (ko) | 2010-10-18 |
CN1622221B (zh) | 2011-06-15 |
US7165197B2 (en) | 2007-01-16 |
US20050111253A1 (en) | 2005-05-26 |
JP2005166243A (ja) | 2005-06-23 |
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