JP4433629B2 - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof Download PDF

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Publication number
JP4433629B2
JP4433629B2 JP2001069615A JP2001069615A JP4433629B2 JP 4433629 B2 JP4433629 B2 JP 4433629B2 JP 2001069615 A JP2001069615 A JP 2001069615A JP 2001069615 A JP2001069615 A JP 2001069615A JP 4433629 B2 JP4433629 B2 JP 4433629B2
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JP
Japan
Prior art keywords
wireless
chip
tag
diode
antenna
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Expired - Fee Related
Application number
JP2001069615A
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Japanese (ja)
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JP2002269520A5 (en
JP2002269520A (en
Inventor
光雄 宇佐美
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Hitachi Ltd
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Hitachi Ltd
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Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2001069615A priority Critical patent/JP4433629B2/en
Priority to KR1020010049735A priority patent/KR100835429B1/en
Priority to TW090121058A priority patent/TW577026B/en
Priority to US09/940,537 priority patent/US6657542B2/en
Publication of JP2002269520A publication Critical patent/JP2002269520A/en
Priority to US10/674,337 priority patent/US6930401B2/en
Priority to US11/128,374 priority patent/US7208351B2/en
Publication of JP2002269520A5 publication Critical patent/JP2002269520A5/ja
Priority to US11/696,028 priority patent/US7652360B2/en
Application granted granted Critical
Publication of JP4433629B2 publication Critical patent/JP4433629B2/en
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    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
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    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/163—Connection portion, e.g. seal
    • H01L2924/164—Material
    • H01L2924/16586—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/16588—Glasses, e.g. amorphous oxides, nitrides or fluorides
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Description

【０００１】
【発明の属する技術分野】
本発明は、非接触で対象物を認識するＩＣタグ等の電子装置、特に無線によって認識番号を送る無体応答体（トランスポンダ）を搭載した電子装置及びその製造方法に関する。
【０００２】
【従来の技術】
従来の高周波を用いて半導体チップ内部のメモリ部に記憶された情報を外部のリーダライタと非接触で交信する半導体タグ（ＩＣタグ）の一例として、半導体チップが球形であり、当該半導体チップにダイポール型の高周波アンテナが接続された非接触型半導体タグが特開２０００−２２２５４０に開示されている。本ＩＣタグでは、球形の半導体チップにアンテナが半田により機械的に取り付けられている。
【０００３】
【発明が解決しようとする課題】
前項で述べたようなダイポール型アンテナが球形の半導体に半田付けされたＩＣタグでは、次に述べるような課題のあることを見いだした。即ち、ダイポール型アンテナと球状の半導体の接続を行うとき、ダイポールアンテナの先端部分と球状の半導体の接続部との位置決めが必要であるが、球状の半導体であると、接続位置を決めるために複雑な手法が要求され、簡便にかつ経済的に位置決めを行うことが困難である。
【０００４】
又、集積回路が球形半導体の表面に形成されており、外部光の影響を受けやすい。
【０００５】
本願発明の目的は、信頼性の高い電子装置を提供することにある。
【０００６】
本願発明の他の目的は、製造が容易な電子装置の製造方法を提供することにある。
【０００７】
【課題を解決するための手段】
本願において開示される発明のうち代表的なものの概要は次の通りである。
【０００８】
アンテナを介して半導体チップに設けられたメモリ内に記憶された情報が読み取られる電子装置において、前記メモリ含む集積回路は前記半導体チップ（ＩＣチップ）の主面に設けられ、前記アンテナは前記ＩＣチップの主面および裏面にそれぞれ設けられた電極に接続され、当該半導体チップ及びそれとリード線との接続部とはガラスによって封止された電子装置とする。
【０００９】
又、所定の情報を記憶するメモリ部と、表面側及び裏面側にそれぞれ設けられた第１及び第２の外部電極とを有する平板状ＩＣチップと、前記第１及び第２の外部電極にそれぞれ接続され、前記ＩＣチップへ電力を供給する第１及び第２のアンテナと、前記第１及び第２の外部端子側の前記第１及び第２のアンテナのそれぞれの一部と前記ＩＣチップとを被うように設けられたガラス封止体とを有する電子装置とする。
【００１０】
又、所定の情報を記憶するメモリ部と表面側及び裏面側にそれぞれ設けられた第１及び第２の外部電極とを有するＩＣチップを、ガラス管内において第１及び第２のアンテナで挟み込み、その後ガラス管を溶融してＩＣチップ及びそれらと第１及び第２のアンテナとの接続部を封止する電子装置の製造方法とする。
【００１１】
なお、ここで言うガラスとは、ＩＣチップを封止するために用いられる材料であり、石英ガラス、硼珪酸ガラス、鉛ガラス等を用いることができる。特に、鉛ガラス等の低融点ガラスが望ましい。
【００１２】
【発明の実施の形態】
本発明に係る電子装置の概略構成を、図１（ａ）、図１（ｂ）を用いて説明する。図１（ａ）、図１（ｂ）は、共に本発明に係る電子装置の断面を示す図である。各図においてリード線１１は台座（ジュメット）１２に接続されて一体ものとして形成されており、アンテナをとなる。アンテナから電力を得て動作するＩＣチップ（無線チップ）１４はジュメットにより挟まれた構造を有する。ガラス１３は管状であり、無線チップおよび、ジュメットの一部がガラス１３で封止されている。図１（ａ）では、無線チップ１４の対角線の長さがジュメット１２の直径よりも大きく、図１（ｂ）では小サイズ無線チップ１４ａの対角線の長さはジュメットの直径よりも小さい。ここでジュメットは無線チップ１４や小サイズ無線チップ１４ａを挟みやすくするために、リード線１１よりも大きな直径を有する先端金属部である。無線チップを板状とし、表面および裏面に電極を設けることにより、ジュメットとの接続のための位置合わせを容易に行うことができる。無線チップ１４、小サイズ無線チップ１４ａをジュメット１２で挟むことにより、ＩＣチップへの外部光の入射を低減できる。特に、小サイズ無線チップ１４ａの場合には、外部光に対する遮蔽効果が大きい。ガラスの形状は筒型や直方体等の自由形状で良いが、ＩＣチップおよびジュメットが封入できる寸法の空洞を持つ必要がある。特に、ガラス管の開放端にＩＣチップの表面及び裏面電極が面する向きでガラス管内にＩＣチップが封入できる大きさの空洞を有することが好ましい。これにより、ジュメットでＩＣチップを容易に挟み込むことができる。ガラスの外径寸法は０．１ｍｍから５ｍｍの範囲とすることにより、外部応力を受け難くく、取り扱い易い。特にタグとして使用する場合、小寸法のため荷物を取り扱うときの邪魔にならず、タグが紛失しにくい。又ガラス管の内径寸法を０．０９ｍｍから４．９ｍｍの範囲内とすることにより、機械的な強度を確保することができる。
【００１３】
次に本発明に係る無線チップの概略構成を、図２（ａ）、図２（ｂ）を用いて説明する。なお、ここでは無線チップについて説明するが、小サイズ無線チップにおいても同様の構成とすることができる。図２（ａ）は、無線チップの回路構成の概略を示す図である。本図に示すように、無線チップ表面端子２１は無線チップ内の回路に設けられた結合コンデンサ２２に接続されており、結合コンデンサ２２は整流ダイオード２３とクランプダイオード２５に接続されている。整流ダイオード２３は更に論理回路２４に接続されている。論理回路２４には、整流ダイオード２３を介して電流が供給される。クランプダイオード２５および論理回路２４は共通端子（本願明細書では共通端子のことを以下、グランドと呼ぶ。）２６に接続されている。
【００１４】
図２（ｂ）は図２（ａ）の回路を形成した無線チップの概略断面図を示している。無線チップ表面端子２１は表面デバイス層２７の上にあり、またグランド２６は無線チップ１４の裏面に存在する。グランド２６はジュメットを介して外部のリード線と接続され、同様に無線チップ表面端子２１はジュメットを介して外部のリード線と接続される。図２（ａ）の無線チップ表面端子２１とグランド２６の二つの端子は外部のアンテナと接続することにより、通信距離を確保することができる。高周波電磁波エネルギをアンテナによって得て、無線チップ内の整流回路によって直流電流を得ることができる。これにより、無線チップは電池なしで動作が可能となる。この回路のグランド端子は半導体チップの基板に接続される。無線チップの電極端子は半導体チップの表面および裏面に形成されており、電極端子の物理的面積は最大無線チップの平面サイズ（チップ全面）まで拡大される。電極端子面積が大きい程電極材料により遮蔽される領域が大きくなり、外部からの光の影響を小さくすることができる。
【００１５】
本発明に係る他の電子装置の概略構成を、図３（ａ）、図３（ｂ）を用いて説明する。図３（ａ）、図３（ｂ）は、共に本発明に係る電子装置の断面を示す図である。ここに示す符号で、図１と同じものは同じ構成を示す。なお、符号３１は、薄膜化された薄型無線チップを、又、符号３１ａは薄膜化された薄型小サイズ無線チップを表す。薄膜化することにより、無線チップの側面からの外部光の影響を低減することができる。
【００１６】
図１（ａ）、図１（ｂ）や図３（ａ）、図３（ｂ）に示した電子装置にＩＣチップが封止されていることを示す識別子を設けることにより、ガラス管内に封止されているチップがＩＣチップであることを明確化することができる。識別子として、マークをガラス表面に施すことができる。色により区別してもよい。図１（ａ）、図１（ｂ）および図３（ａ）、図３（ｂ）では無線チップのすべてまたは中心部が金属製のジュメットで表面および裏面が覆われ、金属は光を透過することが無いために、無線チップが光によって誤動作などの障害を起こすことを防ぐことができる。ジュメットに比較して無線チップがジュメットより小さい図１（ｂ）や図３（ｂ）に示した構造とすることにより光に対して十分に強い構造とすることができる。図１（ａ）、図１（ｂ）や図３（ａ）、図３（ｂ）の構造では無線チップがガラスによって機密封止され、かつ無線チップの両端が固いジュメットによって挟まれるため、耐腐食性や機械的強度に対して十分良好な信頼性を確保することができる。
【００１７】
次に、図２（ａ）で示された論理回路２４の構成例を図４を用いて説明する。メモリ回路４２はクロック抽出回路４３からのクロック信号によって動作して、出力信号はロードスイッチ４４に入力されて、負荷変動動作を行う。
【００１８】
また、平滑コンデンサ４５は整流ダイオード２３のカソードとグランド２６の間に挿入されていて、整流回路（ここでは、整流ダイオード）からの直流電流を蓄積して直流電圧を発生させている。直流電圧は０．３Ｖ程度から３０Ｖ以上まで、無線チップが得るエネルギによって上昇するが、過度な電圧であると、論理回路２４のＭＯＳデバイスのゲート破壊を引き起こすために、電圧を抑制する回路も必要に応じて付加される。
【００１９】
平滑コンデンサ４５は電源電圧の安定化のためにも必要であって、論理回路２４の動作で発生するＣＭＯＳ論理のゲート回路に流れる貫通電流を吸収することも行なわれる。メモリ回路４２はメモリ容量や読み出し専用か、書きこみ可能かなどの仕様によってさまざまな構成を得ることが出来る。クロック抽出回路４３は読み取り機からトランスポンダ（アンテナを備えた無線チップ）に送られてくる高周波の搬送波にクロック信号を変調しておき、受信したトランスポンダのクロック抽出回路が復調してもとの低周波のクロック信号を得るものである。
【００２０】
次に、無線チップについて、図５（ａ）、図５（ｂ）を用いて更に説明する。図５（ａ）は無線チップ１４の概略を示す平面図である。表面デバイス層２７に無線チップの主面側電極端子２１、それに接続された結合コンデンサ２２、それに接続されたクランプダイオード２５と整流ダイオード２３、整流ダイオード２３に接続された論理回路が設けられている。図５（ｂ）は無線チップ１４の要部断面図を示している。絶縁膜（ここではシリコン酸化膜）５１はチップ表面にあって、無線チップ表面側電極端子２１と無線チップの基板との短絡を防止する。
【００２１】
図５（ｂ）は図５（ａ）のＡとＡ‘の断面を示している。無線チップ１４のチップサイズは長辺が０．０１ｍｍから０．５ｍｍであって、小さなガラス管に入るような大きさであり、信頼性および経済性に優れる。無線チップのサイズを、シリコンダイオードと同様に０．３ｍｍ近辺とすることにより生産設備の共用化が可能となり、低コストでトランスポンダを製造することができる。図５（ｂ）で、無線チップの表面側電極端子はメッキで形成された１０μｍ程度の厚さの金属からなる。この厚さの範囲は０．１〜５０μｍが好ましい。
【００２２】
表面側電極端子２１に接続された下部電極と、クランプダイオード２５に接続された上部電極と、これらにより挟まれた絶縁膜（ここでは、シリコンの酸化膜）とにより結合コンデンサ２２が形成されている。無線チップの基板をＰ型とすることにより、Ｐ型の基板とＮ型を有する表面拡散層とでＰＮ接合ダイオードを形成することができる。このとき、基板をグランドとすることができる。またＮ型ＭＯＳによっても基板をグランドとするデバイス設計を行ったダイオードを形成することができる。基板の裏面にはグランド２６の電極を形成して、回路の端子として使用する。このように無線チップの表面および裏面を電極とする設計をすることによりガラス封止のトランスポンダを形成することが可能となる。
【００２３】
次に、図３（ａ）、図３（ｂ）で示した薄型無線チップに関連して、図６を用いて無線チップの厚さと電子装置の性能との関係について説明する。
【００２４】
図６は、無線チップの厚さを横軸にとり、縦軸にトランスポンダと読み取り機の通信距離をとったものである。ここで用いた周波数は、２．４５ＧＨｚである。無線チップの厚さとトランスポンダ回路のグランド直列抵抗は比例関係にあって、このグランド直列抵抗が小さければ通信距離は長くなり、グランド直列抵抗が大きければ回路の損失抵抗が大きくなるため、通信距離は小さくなる。チップ厚さが１００μｍ以下であれば１２００ｍｍ、チップ厚さが２００μｍのときは１５０ｍｍとなる。
【００２５】
この通信距離は回路の構成、デバイスの性能たとえばスレッショルド電圧や電流増幅率などにより異なり、また無線チップの基板濃度によっても異なる。
【００２６】
また、リード線の材料によってもことなり、材料の主体が鉄の時は通信距離は無線チップの厚さが２００μｍのとき、１５０ｍｍであるのに対して、銅にすると通信距離２５０ｍｍに伸ばすことができる。これはリード線の損失はリード線の抵抗値に依存することと、表面のメッキ状態に依存する。高周波の搬送波を利用しているトランスポンダでは、スキン効果が発生して電流が表面層に集中してリード線の表面の抵抗値に依存するものであり、鉄を中心に使用して、銅メッキを施すと、無線チップの厚さが２００μｍのとき、通信距離は２００ｍｍとなる。
【００２７】
なお、周波数が２．４５ＧＨｚの場合、銅メッキの厚さを２〜３μｍとすれば、銅そのものと同程度の通信距離が得られる。
【００２８】
次に、無線チップの電極製造工程を図７（ａ）〜図７（ｄ）を用いて説明する。図７（ａ）は、複数の無線チップのデバイスが形成された半導体ウエハの断面図を示している。図７（ａ）において、上側の面が半導体ウエハ裏面７１を示し、下側の面が半導体ウエハ主面７２を示している。ここでは半導体ウエハの厚さを１５０μｍとしたが、０．１〜３００μｍの範囲で用いることができる。主面側に複数の無線チップのデバイスが形成されている。
【００２９】
図７（ｂ）はウエハ裏面７１の上に金蒸着層７３を形成した直後の断面図を示している。先ず、オーミックコンタクトを取るために金蒸着層７３を形成した。金蒸着層７３の厚さは１０μｍとしたが、０．１μｍから８０μｍの範囲で用いることができる。０．１μｍより薄いと、接合強度が問題である。又、８０μｍより厚いと、ガラスとの熱膨張差が問題となる。引き続き、金と銀との接着性を高めるためにアンチモン蒸着層７４を形成した。
【００３０】
図７（ｃ）は金蒸着層７３の上にアンチモン蒸着層７４を形成した直後の断面図を示している。アンチモン蒸着層７４の厚さは１０μｍとしたが、０．１μｍから８０μｍの範囲で用いることができる。０．１μｍより薄いと接合強度が問題である。又、８０μｍより厚いとガラスとの熱膨張差が問題となる。次に、ジュメットとの接合性を高めるために銀蒸着層７５を形成した。
【００３１】
図７（ｄ）はアンチモン蒸着層７４の上に銀蒸着層７５を形成した直後の断面図を示している。銀蒸着層７５の厚さは１０μｍとしたが、０．１μｍから８０μｍの範囲で用いることができる。０．１μｍより薄いと接合強度が問題である。又、８０μｍより厚いとガラスとの熱膨張差が問題となる。この工程は無線チップ１４の裏面の電極を形成するために、ウエハ裏面全面にメタル層を蒸着する工程を示している。このウエハはダイシングテープに貼りつけられてチップサイズが０．３ｍｍ角程度の無線チップにダイシングしたが、０．０１ｍｍから０．５ｍｍ角の大きさの範囲でダイシングすることが可能である。０．０１ｍｍより薄いとハンドリングし難い。又、０．６ｍｍより厚いと寄生抵抗が問題となる。ダイシングテープはＰＥＴや塩化ビニールが使用されるが廃棄や焼却によて環境破壊を起こさないＰＥＴが使用することが望ましい。
【００３２】
図８（ａ）〜図８（ｄ）を用いて、電子装置の製造方法を説明する。先ず、リード線１１に接続され、垂直に立てられたジュメット１２の上端をガラス管１３の下部から挿入する（図８（ａ））。ついで、ガラス管１３に挿入されたジュメット１２の上部に無線チップ１４を載せる（図８（ｂ））。次に、ガラス管１３の上部からもう一つのジュメット１２を挿入し、無線チップ１４を挟み込む（図８（ｃ））。このときジュメット１２に印加される圧力は５〜１０ＭＰａである。これにより、無線チップの主面および裏面に設けられたそれぞれの電極とジュメットとは電気的に接続される。その後、ガラス管１３を高温で加熱し、ガラスを溶かしてジュメット１２に付着させる（図８（ｄ））。
【００３３】
上記の工程を経て、無線チップ１４はガラス管１３内に封止される。ここで、ジュメット１２はニッケル、鉄の合金に銅メッキを行ったものを用いた。ニッケルと鉄の合金を用いることにより、ジュメットやそれを組み込んだ電子装置を磁石を用いて搬送することができる。ガラスの融点はガラスの構成材料によって制御できる。ここでは、鉛ガラスを用いたので融点は約４５０℃である。
【００３４】
無線チップの配線材料として融点の低いアルミまたはアルミとの合金を用いる場合には、４５０℃程度以下の温度で溶けるガラスや、サーマルシュリンクする材料（例えば、プラスチック）を用いることが好ましい。
【００３５】
無線チップは比較的高温に耐えるように、水素アニールの水素が抜けないようにナイトライド膜を無線チップの上に蒸着したり、アルミの配線の代わり高温に耐える配線材料、たとえば銅とかタングステンとかチタンを使用することが有効である。
【００３６】
低融点のガラスを使用することにより、封止温度を低下させることができ、無線チップへの熱的影響を低減できるためトランスポンダの製造歩留まりを向上させることが可能となる。図８（ａ）〜図８（ｄ）に示した組み立て方法では、治具を超音波で揺することにより無線チップはガラス管の中に自重落下し、ジュメットとガラス管との間の位置合わせが可能であり、また複数個すなわち数千から数万個を同時組み立てることが可能であって、圧倒的な経済性のある組み立てが可能となる。なお、治具１３１の一例を図１３に示す。この治具にはガラス管が挿入される開口部１３２が多数設けられている。
【００３７】
次に、リード長さ（アンテナの長さ）の通信距離に及ぼす影響について図９を用いて説明する。この図の横軸はトランスポンダのリードの長さを示しており、縦軸はトランスポンダと読み取り機の間の通信距離を示している。リードの長さは使用する搬送波の半分の時が共振する条件として最もふさわしく（２．４５ＧＨｚでは約６ｃｍ）、通信距離が大きい。それよりリード長が小さくなるに従って通信距離は短くなるが、長くなる分には極端な通信距離の低下はみられない。リード長としては、搬送波の１／２波長から１波長程度までを用いることができる。
【００３８】
リード線の長さは全長で規定しているため、図９で示すトランスポンダのリード線の左右の長さは必ずしも等長である必要はない。また、図１４に示すようにリードを巻きたときには、リード線の最大直線距離が搬送波の１／２波長から１波長となるように設定すればよい。また、リード線の材質として磁化されやすいニッケル、鉄などを用い、磁場の在る環境において動作させたが、磁化されない材料を用いたときと比べトランスポンダの性能に影響はなかった。これは、電界エネルギによる電圧、電流がリード線で共振発生してガラス部に封止された無線チップに集中し、エネルギーが高周波で流れるためである。
【００３９】
次に、本発明に係る電子装置から記憶情報を取り出すための読み取りシステムの一例を図１０を用いて説明する。図１０において、符号１０１は電子装置（ガラス封止トランスポンダ）、符号１０４はアンテナ、符号１０６は読み取り機、符号１０５は読み取り機１０６とアンテナ１０４とを接続する同軸線、符号１０８はパーソナルコンピュータ、符号１０７はシリアルインターフェースである。ガラス封止トランスポンダ１０１は読み取り機からの電波１０２によって電磁波のエネルギを得ると、トランスポンダの無線チップが動作して応答データ１０３がアンテナ１０４へ伝えられ、アンテナは同軸線１０５を介して読み取り機１０６へ接続されている。ここで、使用周波数は２．４５ＧＨｚ、アンテナを含めた電子装置の長さは５５ｍｍ、リード線の直径は１ｍｍ、ガラス管の直径は３ｍｍである。読み取り機はシリアルインタフェース１０７を介してパソコン１０８へつなげられている。パソコンからは読み出し命令を入力する。これにより、１２８ビットデータ（ＲＯＭ）情報が読み出される。このような構成により、トランスポンダはあらゆる対象物へ付着されて、宅配便や書留便などに使用される。
【００４０】
図１１はこのトランスポンダのエアフォマット（電波の強弱の手順）を示しており、図１１のＡはアンテナ１０４からの読み取り機からの電波１０２のエアフォマットを示し、図１１のＢはトランスポンダ１０１からの応答データを示している。このデータは“０”や“１”の数字からなる。
【００４１】
図１２は本発明の無線チップの断面構造を示していて、無線チップの表面および裏面には金属製の電極をもつことを特徴とする。なお、電極２１はダイシング前に形成される。
【００４２】
【発明の効果】
平板状半導体を用いることにより、簡便に位置決めを行うことができる。また、ガラス管で封止することにより信頼性を向上できる。又、一括生産方式により行うことによって、低コストでトランスポンダを製造することができる。
【図面の簡単な説明】
【図１】本発明に係る電子装置の断面図である。
【図２】本発明に係るＩＣチップの（ａ）回路、（ｂ）断面の概略を示す図である。
【図３】本発明に係る他の電子装置の断面図である。
【図４】本発明に係るＩＣチップに搭載の論理回路の概念図である。
【図５】ＩＣチップの（ａ）回路の概念図、（ｂ）断面図である。
【図６】本発明に係るＩＣチップの厚さと通信距離との関連を示す特性図である。
【図７】本発明に係るＩＣチップの電極形成工程を示す断面図である。
【図８】本発明に係る電子装置の組立工程を示す断面図である。
【図９】本発明に係る電子装置のリード総長と通信距離との関係を示す特性図である。
【図１０】 本発明に係る電子装置から記憶情報を取り出すための読み取りシステムの示す図である。
【図１１】本発明に係る（ａ）読み取り機から電子装置への送信データ、（ｂ）電子装置からの応答データのエアフォーマットを示す図である。
【図１２】本発明に係るＩＣチップの概略断面図である。
【図１３】本発明に係る電子装置を組み立てるための治具の平面図である。
【図１４】本発明に係る電子装置のリード線が曲線形状を有するときのアンテナ長を示すための説明図である。
【符号の説明】
１１…リード線、１２…ジュメット、１３…ガラス管、１４…無線チップ、１４a…小サイズ無線チップ、２１…無線チップ表面電極端子、２２…結合コンデンサ、２３…整流ダイオード、２４…論理回路、２５…クランプダイオード、２６…グランド、２７…表面デバイス層、３１…薄型無線チップ、３１a…小サイズ薄型無線チップ、４２…メモリ回路、４３…クロック抽出回路、４４…ロードスイッチ、４５…平滑コンデンサ、５１…酸化膜、７１…ウエハ裏面、７２…ウエハ主面、７３…金蒸着層、７４…アンチモン蒸着層、７５…銀蒸着層、１０１…ガラス封止トランスポンダ、１０２…読み取り機からの電波、１０３…応答データ、１０４…アンテナ、１０５…同軸線、１０６…読み取り機、１０７…シリアルインタフェース、１０８…パソコン。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an electronic device such as an IC tag for recognizing an object in a non-contact manner, and more particularly, to an electronic device on which an intangible responder (transponder) that sends a recognition number wirelessly and a method for manufacturing the same.
[0002]
[Prior art]
As an example of a semiconductor tag (IC tag) that communicates information stored in a memory section inside a semiconductor chip with an external reader / writer in a non-contact manner using a conventional high frequency, the semiconductor chip has a spherical shape, and a dipole is connected to the semiconductor chip. Japanese Unexamined Patent Publication No. 2000-222540 discloses a non-contact type semiconductor tag to which a high-frequency antenna of a type is connected. In this IC tag, an antenna is mechanically attached to a spherical semiconductor chip with solder.
[0003]
[Problems to be solved by the invention]
The IC tag in which the dipole antenna as described in the previous section is soldered to a spherical semiconductor has been found to have the following problems. In other words, when connecting a dipole antenna and a spherical semiconductor, it is necessary to position the tip of the dipole antenna and the connecting portion of the spherical semiconductor. However, if the semiconductor is a spherical semiconductor, it is complicated to determine the connection position. Therefore, it is difficult to perform positioning simply and economically.
[0004]
Further, the integrated circuit is formed on the surface of the spherical semiconductor and is easily affected by external light.
[0005]
An object of the present invention is to provide a highly reliable electronic device.
[0006]
Another object of the present invention is to provide an electronic device manufacturing method that is easy to manufacture.
[0007]
[Means for Solving the Problems]
The outline of typical ones of the inventions disclosed in the present application is as follows.
[0008]
In an electronic device that reads information stored in a memory provided in a semiconductor chip via an antenna, the integrated circuit including the memory is provided on a main surface of the semiconductor chip (IC chip), and the antenna is the IC chip. The semiconductor device and the connection portion between the semiconductor chip and the lead wire are connected to electrodes provided on the main surface and the back surface of the electronic device, respectively, and sealed with glass.
[0009]
In addition, a planar IC chip having a memory unit for storing predetermined information, first and second external electrodes provided on the front surface side and the back surface side, respectively, and the first and second external electrodes, respectively. First and second antennas connected to supply power to the IC chip, a part of each of the first and second antennas on the first and second external terminal sides, and the IC chip An electronic device having a glass sealing body provided to be covered.
[0010]
Further, an IC chip having a memory unit for storing predetermined information and first and second external electrodes provided on the front surface side and the back surface side, respectively, is sandwiched between the first and second antennas in the glass tube, and thereafter A method for manufacturing an electronic device is provided in which a glass tube is melted to seal a connection portion between the IC chip and the first and second antennas.
[0011]
Note that the glass here is a material used for sealing an IC chip, and quartz glass, borosilicate glass, lead glass, or the like can be used. In particular, low melting point glass such as lead glass is desirable.
[0012]
DETAILED DESCRIPTION OF THE INVENTION
A schematic configuration of an electronic device according to the present invention will be described with reference to FIGS. 1 (a) and 1 (b). 1A and 1B are both cross-sectional views of an electronic device according to the present invention. In each figure, the lead wire 11 is connected to a pedestal (Dumet) 12 and is formed as an integral unit, which serves as an antenna. An IC chip (wireless chip) 14 that operates by obtaining power from an antenna has a structure sandwiched between jumets. The glass 13 is tubular, and a wireless chip and a part of jumet are sealed with the glass 13. In FIG. 1A, the diagonal length of the wireless chip 14 is larger than the diameter of the dumet 12, and in FIG. 1B, the diagonal length of the small-sized wireless chip 14a is smaller than the diameter of the jumet. Here, the dumet is a tip metal portion having a diameter larger than that of the lead wire 11 so that the wireless chip 14 and the small-sized wireless chip 14a can be easily sandwiched. By making the wireless chip into a plate shape and providing electrodes on the front surface and the back surface, alignment for connection with Jumet can be easily performed. By sandwiching the wireless chip 14 and the small-sized wireless chip 14a with the dumet 12, the incidence of external light on the IC chip can be reduced. In particular, in the case of the small-sized wireless chip 14a, the shielding effect against external light is large. The shape of the glass may be a free shape such as a cylindrical shape or a rectangular parallelepiped. In particular, it is preferable to have a cavity of a size that allows the IC chip to be enclosed in the glass tube in such a direction that the front and back electrodes of the IC chip face the open end of the glass tube. As a result, the IC chip can be easily sandwiched between the jumets. By setting the outer diameter of the glass in the range of 0.1 mm to 5 mm, it is difficult to receive external stress and is easy to handle. In particular, when used as a tag, the tag is not lost because it is small in size and does not interfere with handling of luggage. Moreover, mechanical strength is securable by making the internal diameter dimension of a glass tube into the range of 0.09 mm to 4.9 mm.
[0013]
Next, a schematic configuration of the wireless chip according to the present invention will be described with reference to FIGS. 2 (a) and 2 (b). Note that although a wireless chip is described here, a similar configuration can be used for a small-sized wireless chip. FIG. 2A is a diagram illustrating an outline of a circuit configuration of the wireless chip. As shown in the figure, the wireless chip surface terminal 21 is connected to a coupling capacitor 22 provided in a circuit in the wireless chip, and the coupling capacitor 22 is connected to a rectifier diode 23 and a clamp diode 25. The rectifier diode 23 is further connected to the logic circuit 24. A current is supplied to the logic circuit 24 via the rectifier diode 23. The clamp diode 25 and the logic circuit 24 are connected to a common terminal 26 (hereinafter, the common terminal is referred to as a ground).
[0014]
FIG. 2B is a schematic cross-sectional view of the wireless chip on which the circuit of FIG. The wireless chip front surface terminal 21 is on the surface device layer 27, and the ground 26 exists on the back surface of the wireless chip 14. The ground 26 is connected to an external lead wire via a dumet, and similarly, the wireless chip surface terminal 21 is connected to an external lead wire via the dumet. By connecting the two terminals of the wireless chip surface terminal 21 and the ground 26 in FIG. 2A to an external antenna, a communication distance can be secured. High frequency electromagnetic wave energy can be obtained by an antenna, and a direct current can be obtained by a rectifier circuit in the wireless chip. As a result, the wireless chip can operate without a battery. The ground terminal of this circuit is connected to the substrate of the semiconductor chip. The electrode terminals of the wireless chip are formed on the front and back surfaces of the semiconductor chip, and the physical area of the electrode terminals is expanded to the maximum plane size of the wireless chip (the entire chip surface). The larger the electrode terminal area, the larger the area shielded by the electrode material, and the influence of light from the outside can be reduced.
[0015]
A schematic configuration of another electronic device according to the present invention will be described with reference to FIGS. 3 (a) and 3 (b). 3A and 3B are views each showing a cross section of the electronic device according to the present invention. The same reference numerals as those shown in FIG. 1 denote the same components. Reference numeral 31 denotes a thin wireless chip with a thin film, and reference numeral 31a denotes a thin thin wireless chip with a thin film. By reducing the thickness, the influence of external light from the side surface of the wireless chip can be reduced.
[0016]
The electronic device shown in FIGS. 1 (a), 1 (b), 3 (a), and 3 (b) is provided with an identifier indicating that the IC chip is sealed, and sealed in a glass tube. It can be clarified that the stopped chip is an IC chip. As an identifier, a mark can be applied to the glass surface. You may distinguish by a color. 1 (a), 1 (b), 3 (a), and 3 (b), all or the center of the wireless chip is covered with a metal jumet, and the front and back surfaces are covered, and the metal transmits light. Therefore, the wireless chip can be prevented from malfunctioning due to light. By using the structure shown in FIG. 1B or FIG. 3B in which the wireless chip is smaller than the dumet, the structure can be made sufficiently strong against light. 1 (a), 1 (b), 3 (a), and 3 (b), the wireless chip is sealed with glass and both ends of the wireless chip are sandwiched between hard dumets. It is possible to ensure sufficiently good reliability with respect to corrosivity and mechanical strength.
[0017]
Next, a configuration example of the logic circuit 24 shown in FIG. 2A will be described with reference to FIG. The memory circuit 42 operates in response to the clock signal from the clock extraction circuit 43, and the output signal is input to the load switch 44 to perform a load variation operation.
[0018]
The smoothing capacitor 45 is inserted between the cathode of the rectifier diode 23 and the ground 26 and accumulates a direct current from a rectifier circuit (in this case, a rectifier diode) to generate a direct current voltage. The DC voltage rises from about 0.3 V to 30 V or more depending on the energy obtained by the wireless chip. However, if the voltage is excessive, a circuit that suppresses the voltage is necessary to cause gate breakdown of the MOS device of the logic circuit 24. It is added according to.
[0019]
The smoothing capacitor 45 is also necessary for stabilizing the power supply voltage, and absorbs a through current flowing in the gate circuit of the CMOS logic generated by the operation of the logic circuit 24. Various configurations of the memory circuit 42 can be obtained depending on specifications such as memory capacity, read-only, or writable. The clock extraction circuit 43 modulates a clock signal into a high frequency carrier wave sent from a reader to a transponder (a wireless chip equipped with an antenna), and the received low frequency signal is demodulated by the clock extraction circuit of the transponder. The clock signal is obtained.
[0020]
Next, the wireless chip will be further described with reference to FIGS. 5 (a) and 5 (b). FIG. 5A is a plan view showing an outline of the wireless chip 14. The surface device layer 27 is provided with a main surface side electrode terminal 21 of the wireless chip, a coupling capacitor 22 connected thereto, a clamp diode 25 and a rectifier diode 23 connected thereto, and a logic circuit connected to the rectifier diode 23. FIG. 5B is a cross-sectional view of the main part of the wireless chip 14. The insulating film (here, silicon oxide film) 51 is on the chip surface and prevents a short circuit between the wireless chip surface side electrode terminal 21 and the wireless chip substrate.
[0021]
FIG. 5B shows a cross section taken along lines A and A ′ in FIG. The chip size of the wireless chip 14 has a long side of 0.01 mm to 0.5 mm, and is a size that can fit into a small glass tube, and is excellent in reliability and economy. By setting the size of the wireless chip in the vicinity of 0.3 mm as in the case of the silicon diode, it becomes possible to share the production equipment, and the transponder can be manufactured at low cost. In FIG. 5B, the surface side electrode terminal of the wireless chip is made of a metal having a thickness of about 10 μm formed by plating. The thickness range is preferably 0.1 to 50 μm.
[0022]
A coupling capacitor 22 is formed by a lower electrode connected to the surface-side electrode terminal 21, an upper electrode connected to the clamp diode 25, and an insulating film (here, a silicon oxide film) sandwiched therebetween. . By making the substrate of the wireless chip P-type, a PN junction diode can be formed with the P-type substrate and the N-type surface diffusion layer. At this time, the substrate can be grounded. In addition, a diode having a device design with the substrate as the ground can be formed by an N-type MOS. An electrode of a ground 26 is formed on the back surface of the substrate and used as a circuit terminal. By designing the front and back surfaces of the wireless chip as electrodes in this way, a glass sealed transponder can be formed.
[0023]
Next, in relation to the thin wireless chip shown in FIGS. 3A and 3B, the relationship between the thickness of the wireless chip and the performance of the electronic device will be described with reference to FIG.
[0024]
In FIG. 6, the thickness of the wireless chip is taken on the horizontal axis, and the communication distance between the transponder and the reader is taken on the vertical axis. The frequency used here is 2.45 GHz. The thickness of the wireless chip and the ground series resistance of the transponder circuit are proportional to each other. If this ground series resistance is small, the communication distance is long, and if the ground series resistance is large, the loss resistance of the circuit is large. Become. When the chip thickness is 100 μm or less, it is 1200 mm, and when the chip thickness is 200 μm, it is 150 mm.
[0025]
This communication distance varies depending on the circuit configuration and device performance such as threshold voltage and current amplification factor, and also varies depending on the substrate concentration of the wireless chip.
[0026]
Also, depending on the material of the lead wire, when the material is mainly iron, the communication distance is 150 mm when the thickness of the wireless chip is 200 μm, whereas with copper, the communication distance can be extended to 250 mm. it can. This is because the loss of the lead wire depends on the resistance value of the lead wire and the plating state of the surface. In transponders that use high-frequency carrier waves, the skin effect occurs and current concentrates on the surface layer and depends on the resistance value of the surface of the lead wire. When applied, when the thickness of the wireless chip is 200 μm, the communication distance is 200 mm.
[0027]
When the frequency is 2.45 GHz, if the thickness of the copper plating is 2 to 3 μm, a communication distance similar to that of copper itself can be obtained.
[0028]
Next, an electrode manufacturing process of the wireless chip will be described with reference to FIGS. 7 (a) to 7 (d). FIG. 7A shows a cross-sectional view of a semiconductor wafer on which a plurality of wireless chip devices are formed. In FIG. 7A, the upper surface shows the semiconductor wafer back surface 71, and the lower surface shows the semiconductor wafer main surface 72. Although the thickness of the semiconductor wafer is 150 μm here, it can be used in the range of 0.1 to 300 μm. A plurality of wireless chip devices are formed on the main surface side.
[0029]
FIG. 7B shows a cross-sectional view immediately after the gold vapor deposition layer 73 is formed on the wafer back surface 71. First, a gold vapor deposition layer 73 was formed to make ohmic contact. Although the thickness of the gold vapor deposition layer 73 is 10 μm, it can be used in the range of 0.1 μm to 80 μm. If it is thinner than 0.1 μm, the bonding strength is a problem. On the other hand, if it is thicker than 80 μm, a difference in thermal expansion from glass becomes a problem. Subsequently, an antimony vapor deposition layer 74 was formed in order to improve the adhesion between gold and silver.
[0030]
FIG. 7C shows a cross-sectional view immediately after the antimony vapor deposition layer 74 is formed on the gold vapor deposition layer 73. Although the thickness of the antimony vapor deposition layer 74 is 10 μm, it can be used in the range of 0.1 μm to 80 μm. If it is thinner than 0.1 μm, the bonding strength is a problem. On the other hand, if it is thicker than 80 μm, a difference in thermal expansion from glass becomes a problem. Next, a silver vapor deposition layer 75 was formed in order to improve the bondability with dumet.
[0031]
FIG. 7 (d) shows a cross-sectional view immediately after the silver vapor deposition layer 75 is formed on the antimony vapor deposition layer 74. Although the thickness of the silver vapor deposition layer 75 is 10 μm, it can be used in the range of 0.1 μm to 80 μm. If it is thinner than 0.1 μm, the bonding strength is a problem. On the other hand, if it is thicker than 80 μm, a difference in thermal expansion from glass becomes a problem. This process is a process of depositing a metal layer on the entire back surface of the wafer in order to form an electrode on the back surface of the wireless chip 14. The wafer is affixed to a dicing tape and diced into a wireless chip having a chip size of about 0.3 mm square, but can be diced in a range of 0.01 mm to 0.5 mm square. If it is thinner than 0.01 mm, it is difficult to handle. On the other hand, if it is thicker than 0.6 mm, parasitic resistance becomes a problem. As the dicing tape, PET or vinyl chloride is used, but it is desirable to use PET that does not cause environmental destruction due to disposal or incineration.
[0032]
A method for manufacturing the electronic device will be described with reference to FIGS. First, the upper end of the jumet 12 that is connected to the lead wire 11 and stands vertically is inserted from the lower part of the glass tube 13 (FIG. 8A). Next, the wireless chip 14 is placed on top of the jumet 12 inserted into the glass tube 13 (FIG. 8B). Next, another jumet 12 is inserted from the upper part of the glass tube 13, and the wireless chip 14 is sandwiched (FIG. 8C). At this time, the pressure applied to the dumet 12 is 5 to 10 MPa. Thereby, each electrode and dumet provided on the main surface and the back surface of the wireless chip are electrically connected. Thereafter, the glass tube 13 is heated at a high temperature to melt the glass and adhere it to the jumet 12 (FIG. 8D).
[0033]
The wireless chip 14 is sealed in the glass tube 13 through the above steps. Here, the jumet 12 used was a nickel / iron alloy plated with copper. By using an alloy of nickel and iron, it is possible to transport jumet and an electronic device incorporating the same using a magnet. The melting point of the glass can be controlled by the constituent material of the glass. Here, since lead glass is used, the melting point is about 450 ° C.
[0034]
When using aluminum or an alloy with aluminum having a low melting point as the wiring material of the wireless chip, it is preferable to use glass that melts at a temperature of about 450 ° C. or less, or a material that can be thermally shrunk (for example, plastic).
[0035]
In order for the wireless chip to withstand relatively high temperatures, a nitride film is deposited on the wireless chip so that the hydrogen annealing hydrogen does not escape, or wiring materials that can withstand high temperatures instead of aluminum wiring, such as copper, tungsten or titanium It is effective to use
[0036]
By using a glass having a low melting point, the sealing temperature can be lowered and the thermal influence on the wireless chip can be reduced, so that the production yield of the transponder can be improved. In the assembling method shown in FIGS. 8A to 8D, the wireless chip falls by its own weight into the glass tube by shaking the jig with ultrasonic waves, and the alignment between the jumet and the glass tube is performed. It is possible to assemble a plurality, that is, several thousand to several tens of thousands at the same time, and it is possible to assemble with overwhelming economy. An example of the jig 131 is shown in FIG. This jig is provided with a large number of openings 132 into which glass tubes are inserted.
[0037]
Next, the influence of the lead length (antenna length) on the communication distance will be described with reference to FIG. In this figure, the horizontal axis indicates the length of the transponder lead, and the vertical axis indicates the communication distance between the transponder and the reader. The length of the lead is most suitable as a condition for resonating when half of the carrier wave used is used (about 6 cm at 2.45 GHz), and the communication distance is long. As the lead length becomes shorter than that, the communication distance becomes shorter. However, as the lead length becomes longer, there is no extreme decrease in the communication distance. The lead length can be from 1/2 wavelength to about 1 wavelength of the carrier wave.
[0038]
Since the length of the lead wire is defined by the total length, the left and right lengths of the lead wires of the transponder shown in FIG. 9 are not necessarily equal. Further, as shown in FIG. 14, when the lead is wound, the maximum linear distance of the lead wire may be set so as to be one wavelength from ½ wavelength of the carrier wave. Moreover, although nickel, iron, etc., which are easily magnetized, were used as the lead wire material and operated in an environment with a magnetic field, the performance of the transponder was not affected as compared with the case where a non-magnetized material was used. This is because voltage and current due to electric field energy are generated by resonance in the lead wire and concentrated on the wireless chip sealed in the glass portion, and the energy flows at a high frequency.
[0039]
Next, an example of a reading system for extracting stored information from the electronic apparatus according to the present invention will be described with reference to FIG. 10, reference numeral 101 denotes an electronic device (glass-sealed transponder), reference numeral 104 denotes an antenna, reference numeral 106 denotes a reader, reference numeral 105 denotes a coaxial line connecting the reader 106 and the antenna 104, reference numeral 108 denotes a personal computer, reference numeral Reference numeral 107 denotes a serial interface. When the glass-encapsulated transponder 101 obtains electromagnetic wave energy by the radio wave 102 from the reader, the wireless chip of the transponder operates and the response data 103 is transmitted to the antenna 104, and the antenna is transmitted to the reader 106 via the coaxial line 105. It is connected. Here, the frequency used is 2.45 GHz, the length of the electronic device including the antenna is 55 mm, the diameter of the lead wire is 1 mm, and the diameter of the glass tube is 3 mm. The reader is connected to the personal computer 108 via the serial interface 107. A read command is input from the personal computer. Thereby, 128-bit data (ROM) information is read. With such a configuration, the transponder is attached to all objects and used for courier service, registered mail and the like.
[0040]
FIG. 11 shows the air format of the transponder (the procedure of the strength of the radio wave), A in FIG. 11 shows the air format of the radio wave 102 from the reader from the antenna 104, and B in FIG. 11 shows the air format from the transponder 101. The response data is shown. This data consists of numbers such as “0” and “1”.
[0041]
FIG. 12 shows a cross-sectional structure of the wireless chip of the present invention, which is characterized by having metal electrodes on the front and back surfaces of the wireless chip. The electrode 21 is formed before dicing.
[0042]
【The invention's effect】
By using a flat semiconductor, positioning can be performed easily. Moreover, reliability can be improved by sealing with a glass tube. In addition, the transponder can be manufactured at a low cost by performing the batch production method.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of an electronic device according to the present invention.
FIGS. 2A and 2B are diagrams showing an outline of a (a) circuit and (b) a cross section of an IC chip according to the present invention.
FIG. 3 is a cross-sectional view of another electronic device according to the present invention.
FIG. 4 is a conceptual diagram of a logic circuit mounted on an IC chip according to the present invention.
5A is a conceptual diagram of a circuit of an IC chip, and FIG. 5B is a cross-sectional view thereof.
FIG. 6 is a characteristic diagram showing the relationship between the thickness of the IC chip according to the present invention and the communication distance.
FIG. 7 is a cross-sectional view showing an electrode forming process of an IC chip according to the present invention.
FIG. 8 is a cross-sectional view showing an assembly process of the electronic device according to the invention.
FIG. 9 is a characteristic diagram showing the relationship between the total lead length and the communication distance of the electronic device according to the present invention.
FIG. 10 shows a reading system for retrieving stored information from an electronic device according to the present invention.
FIG. 11 is a diagram showing an air format of (a) transmission data from the reader to the electronic device and (b) response data from the electronic device according to the present invention.
FIG. 12 is a schematic cross-sectional view of an IC chip according to the present invention.
FIG. 13 is a plan view of a jig for assembling an electronic device according to the present invention.
FIG. 14 is an explanatory diagram for illustrating an antenna length when a lead wire of the electronic device according to the present invention has a curved shape;
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 11 ... Lead wire, 12 ... Jumet, 13 ... Glass tube, 14 ... Wireless chip, 14a ... Small size wireless chip, 21 ... Wireless chip surface electrode terminal, 22 ... Coupling capacitor, 23 ... Rectifier diode, 24 ... Logic circuit, 25 DESCRIPTION OF SYMBOLS ... Clamp diode, 26 ... Ground, 27 ... Surface device layer, 31 ... Thin wireless chip, 31a ... Small size thin wireless chip, 42 ... Memory circuit, 43 ... Clock extraction circuit, 44 ... Load switch, 45 ... Smoothing capacitor, 51 DESCRIPTION OF SYMBOLS ... Oxide film, 71 ... Wafer back surface, 72 ... Wafer main surface, 73 ... Gold vapor deposition layer, 74 ... Antimony vapor deposition layer, 75 ... Silver vapor deposition layer, 101 ... Glass sealing transponder, 102 ... Radio wave from reader, 103 ... Response data 104 ... antenna 105 ... coaxial wire 106 ... reader 107 ... serial interface 1 8 ... the personal computer.

Claims (10)

ＩＣチップの主面に主面電極と、ＩＣチップの裏面に裏面電極と、ＭＯＳデバイスからなる論理回路と、アンテナに誘起した電圧を整流する倍圧整流回路を有し、
前記アンテナは前記主面電極と前記裏面電極との間を挟み込むものであって、
前記倍圧整流回路は第１ダイオードと第２ダイオードとコンデンサを含むものであって、
前記コンデンサは、前記主面電極と、前記第１ダイオードのカソード及び前記第２ダイオードのアノードとの間に接続するものであって、
前記第１ダイオードのアノードは、グランドへ接続するものであって、
前記第２ダイオードのカソードは、前記論理回路の電源ラインへ接続するものであって、
前記裏面電極は、前記グランドとなる前記ＭＯＳデバイスの基板へ接続するＩＣチップ。 Possess the principal surface electrode on the main surface of the IC chip, and the back electrode on the back surface of the IC chip, a logic circuit composed of MOS devices, a voltage doubler rectifier circuit for rectifying a voltage induced to the antenna,
The antenna sandwiches the main surface electrode and the back electrode,
The voltage doubler rectifier circuit includes a first diode, a second diode, and a capacitor,
The capacitor is connected between the main surface electrode and a cathode of the first diode and an anode of the second diode,
The anode of the first diode is for connecting to the grayed run de,
The cathode of the second diode, it der used to connect to the power supply line of the logic circuit,
The back electrode is an IC chip connected to the substrate of the MOS device that becomes the ground . ＩＣチップの主面に主面電極と、ＩＣチップの裏面に裏面電極と、ＭＯＳデバイスからなる論理回路と、アンテナに誘起した電圧を整流する倍圧整流回路を備えるＩＣチップと、
アンテナを有するものであって、
前記アンテナは前記主面電極と前記裏面電極との間を挟み込むものであって、
前記倍圧整流回路は第１ダイオードと第２ダイオードとコンデンサを含むものであって、
前記コンデンサは、前記主面電極と、前記第１ダイオードのカソード及び前記第２ダイオードのアノードとの間に接続するものであって、
前記第１ダイオードのアノードは、グランドへ接続するものであって、
前記第２ダイオードのカソードは、前記論理回路の電源ラインへ接続するものであって、
前記裏面電極は、前記グランドとなる前記ＭＯＳデバイスの基板へ接続する無線ＩＣタグ。 An IC chip having a main surface electrode on the main surface of the IC chip, a back electrode on the back surface of the IC chip, a logic circuit composed of a MOS device , and a voltage doubler rectifier circuit that rectifies the voltage induced in the antenna;
Having an antenna,
The antenna sandwiches the main surface electrode and the back electrode,
The voltage doubler rectifier circuit includes a first diode, a second diode, and a capacitor,
The capacitor is connected between the main surface electrode and a cathode of the first diode and an anode of the second diode,
The anode of the first diode is for connecting to the grayed run de,
The cathode of the second diode, it der used to connect to the power supply line of the logic circuit,
The back surface electrode is a wireless IC tag connected to a substrate of the MOS device that becomes the ground. 請求項２に記載の無線ＩＣタグにおいて、
前記裏面電極は、前記ＩＣチップの裏面に金、アンチモン、銀の順に積層された膜である無線ＩＣタグ。The wireless IC tag according to claim 2, wherein
The back surface electrode is a wireless IC tag, which is a film in which gold, antimony, and silver are stacked in this order on the back surface of the IC chip. 請求項３に記載の無線ＩＣタグにおいて、
前記金、アンチモン、銀膜の厚さはいずれも０．１μｍから８０μｍである無線ＩＣタグ。The wireless IC tag according to claim 3, wherein
A wireless IC tag in which the gold, antimony, and silver films each have a thickness of 0.1 μm to 80 μm. 請求項２に記載の無線ＩＣタグにおいて、
前記アンテナは、リード線である無線ＩＣタグ。The wireless IC tag according to claim 2, wherein
The antenna is a wireless IC tag which is a lead wire. 請求項２に記載の無線ＩＣタグにおいて、
前記アンテナは、鉄または銅または銅メッキを施した鉄である無線ＩＣタグ。The wireless IC tag according to claim 2, wherein
The antenna is a wireless IC tag which is iron, copper, or copper-plated iron. 請求項２に記載の無線ＩＣタグにおいて、
前記無線ＩＣタグは、ガラスにより封止されている無線ＩＣタグ。The wireless IC tag according to claim 2, wherein
The wireless IC tag is a wireless IC tag sealed with glass. 請求項７に記載の無線ＩＣタグにおいて、
前記ガラスは、石英ガラス、硼珪酸ガラス、鉛ガラスである無線ＩＣタグ。The wireless IC tag according to claim 7, wherein
The wireless IC tag is made of quartz glass, borosilicate glass, or lead glass. 請求項２に記載の無線ＩＣタグにおいて、
前記アンテナは、デュメットにより固定されている無線ＩＣタグ。The wireless IC tag according to claim 2, wherein
The antenna is a wireless IC tag fixed by a dumet. 請求項９に記載の無線ＩＣタグにおいて、
前記デュメットは、ニッケルと鉄の合金に銅メッキを施したものである無線ＩＣタグ。The wireless IC tag according to claim 9, wherein
The Dumet is a wireless IC tag in which an alloy of nickel and iron is plated with copper.
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