JP4372490B2 - 半導体イメージセンサic - Google Patents
半導体イメージセンサic Download PDFInfo
- Publication number
- JP4372490B2 JP4372490B2 JP2003299840A JP2003299840A JP4372490B2 JP 4372490 B2 JP4372490 B2 JP 4372490B2 JP 2003299840 A JP2003299840 A JP 2003299840A JP 2003299840 A JP2003299840 A JP 2003299840A JP 4372490 B2 JP4372490 B2 JP 4372490B2
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- JP
- Japan
- Prior art keywords
- region
- image sensor
- junction
- linear image
- generated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 34
- 239000000758 substrate Substances 0.000 claims description 22
- 238000009792 diffusion process Methods 0.000 claims description 17
- 239000000969 carrier Substances 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 11
- 238000012360 testing method Methods 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 239000005380 borophosphosilicate glass Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 238000005215 recombination Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Images
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Description
また、ICを切り離すために設けられるスクライブライン領域309の表面近傍にはN型半導体基板301の電位を安定して固定するためにN型拡散領域310が存在する。N型拡散領域310の表面は、ICを切り離すダイシング用歯(ブレード)の消耗を低減させるためにBPSG膜306及びシリコン窒化膜308がエッチングされて除去され、直接大気中に晒されている。
従来の半導体イメージセンサICでは、スクライブライン領域309上のN型拡散領域310が形成されず、さらにこの領域のN型半導体基板301表面をエッチングで意図的に結晶性を荒らした状態にして少数キャリアの発生を防止しているものもある(例えば、特許文献1参照。)。
前記スクライブ領域109のN型拡散領域110の下部には、水分の影響で発生する意図しない少数キャリアを吸収・再結合するためのPN接合であるP型ウェル領域111が形成されている。このP型ウェル領域111と前記フォトトランジスタのベース部分に相当するP型ウェル領域102は同じ工程で作製されている。意図しない少数キャリアの吸収・再結合を行うためのカードリング領域として、P型ウェル領域111はN型半導体基板101との間で第1のPN接合、N型拡散領域110との間で第2のPN接合を形成しており、ウェハ基板の比較的深い領域で発生する少数キャリアを第1のPN接合で、ごく浅い表面近傍で発生する少数キャリアを第2のPN接合でそれぞれ効果的に吸収・再結合させる役割を分担している。
102 … P型ウェル領域
103 … N型拡散領域
104 … ゲート絶縁膜
105 … ポリシリコン電極
106 … BPSG膜
107 … メタル配線
108 … シリコン窒化膜
109 … スクライブライン領域
110 … N型拡散領域
111 … P型ウェル領域(ガードリング領域)
Claims (3)
- 半導体基板の表面近傍に設けられた受光素子であるフォトダイオードあるいはフォトトランジスタのPN接合間に発生する空乏層に、光により発生した少数キャリアを蓄えることによりデータを読み取るリニアイメージセンサICにおいて発生する出力ばらつきを引き起こす余剰キャリアを抑制するために、前記リニアイメージセンサICを切り離すために設けられるスクライブライン領域のうち前記受光素子の存在する側の一長辺と両短辺部分にのみシリコン基板表面近傍に、前記スクライブライン領域の表面に設けられた第1導電型の拡散領域と前記拡散領域の下部に配置された第2導電型のウェル領域とからなる前記余剰キャリアを吸収する領域を設けたことを特徴とするリニアイメージセンサIC。
- 前記余剰キャリアを吸収する前記領域は、PN接合である請求項1記載のリニアイメージセンサIC。
- 前記PN接合は、前記余剰キャリアのうちで前記半導体基板の前記ウェル領域の深さと同程度の比較的深い領域で発生したものを吸収・再結合させる第1のPN接合と前記半導体基板の前記拡散領域の深さと同程度のごく浅い領域で発生したものを吸収・再結合させる第2のPN接合とからなる請求項2記載のリニアイメージセンサIC。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003299840A JP4372490B2 (ja) | 2003-08-25 | 2003-08-25 | 半導体イメージセンサic |
KR1020040067245A KR101063031B1 (ko) | 2003-08-25 | 2004-08-25 | 반도체 이미지 센서 ic의 제조 방법 |
CNB2004100682295A CN100505283C (zh) | 2003-08-25 | 2004-08-25 | 半导体图像传感器ic的制造方法 |
TW093125562A TWI338363B (en) | 2003-08-25 | 2004-08-26 | Method of manufacturing a semiconductor image sensor ic |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003299840A JP4372490B2 (ja) | 2003-08-25 | 2003-08-25 | 半導体イメージセンサic |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005072243A JP2005072243A (ja) | 2005-03-17 |
JP4372490B2 true JP4372490B2 (ja) | 2009-11-25 |
Family
ID=34404954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003299840A Expired - Lifetime JP4372490B2 (ja) | 2003-08-25 | 2003-08-25 | 半導体イメージセンサic |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4372490B2 (ja) |
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2003
- 2003-08-25 JP JP2003299840A patent/JP4372490B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
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JP2005072243A (ja) | 2005-03-17 |
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