JP4362834B2 - 半導体装置の製造方法、電子機器の製造方法および半導体製造装置 - Google Patents
半導体装置の製造方法、電子機器の製造方法および半導体製造装置 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- Microelectronics & Electronic Packaging (AREA)
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- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Description
まず、本実施の形態の半導体装置の製造に用いられる半導体製造装置について図1〜図9を参照しながら説明する。
本発明の実施例では、上述した半導体製造装置を使用して、水素火炎処理を行なう。ここでは、水素及び酸素の混合ガスを燃料とするガスバーナーを用いて、シリコン膜(半導体膜、半導体層)の加熱処理による再結晶化を例に説明する。
水素及び酸素の混合ガスを導出し、略直線状に一定のピッチで形成された複数のガス流出口(開口部)22eが形成された導気管22aを用いて、火炎を照射した。ここで、1の開口部から放射される火炎を「スポット火炎」という。このスポット火炎間において、火炎の温度が低下し、開口部22eの直下では、火炎の温度が高く、開口部22e間では、相対的に火炎の温度が低くなっていることが原因と考えられる。
(製造方法1)
本発明にかかる半導体装置の製造方法を、TFT(薄膜トランジスタ、Thin Film Transistor)の製造工程を例に、図17〜図19を参照しながら説明する。図17は、製造方法1における半導体装置の製造工程を示す工程断面図である(図19について同じ)。
(製造方法2)
製造方法1においては、ライン状の火炎を用いたが、複数のスポット火炎を隣接する火炎の端部が重なるよう調整して水素火炎処理を行ってもよい。
(製造方法3)
製造方法1においては、導気管22aに、略直線状の開口部を設けたが、図5を参照しながら説明したように、導気管22aを囲む遮蔽器22bに略直線状の開口部を設け、当該開口部からライン状の火炎が放射されるように調整してもよい。即ち、複数の火炎の下に、略直線状の開口部を有するノズル部を配置し、この開口部を介して複数の火炎を照射する。このように、ライン状の火炎を形成してもよい。
(製造方法4)
また、複数のスポット火炎の第1走査の後に、スポット間隔の1/2ずらした第2走査を行い処理の均一性を図ってもよい。
次に、前述の実施の形態で説明した方法で形成される半導体装置(例えばTFT)が使用される電気光学装置(電子機器)について説明する。
Claims (3)
- 基板上にシリコン膜を形成する工程と、
前記シリコン膜に対し、水素及び酸素の混合ガスを燃料とし、略直線状に一定間隔毎に並んだ複数の火炎を走査することにより前記シリコン膜を再結晶化するとともに、再結晶化された前記シリコン膜上に酸化シリコン膜を形成する工程とを有し、
前記熱処理を施す工程は、
第1方向に前記複数の火炎を走査する第1工程と、
前記複数の火炎を、前記第1方向と直交する第2方向に前記一定間隔の1/2の距離移
動させた後、前記第1方向に走査する第2工程と、
を有することを特徴とする半導体装置の製造方法。 - 前記第1工程は、前記基板の第1端部側から前記複数の火炎を走査する工程であり、
前記第2工程は、前記基板の前記第1端部と逆側の第2端部から前記複数の火炎を走査する工程であることを特徴とする請求項1記載の半導体装置の製造方法。 - 請求項1又は2に記載の半導体装置の製造方法を有することを特徴とする電子機器の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2006277956A JP4362834B2 (ja) | 2006-10-11 | 2006-10-11 | 半導体装置の製造方法、電子機器の製造方法および半導体製造装置 |
US11/905,930 US20080087213A1 (en) | 2006-10-11 | 2007-10-05 | Method for fabricating a semiconductor device, method for fabricating an electronic device, and semiconductor fabricating apparatus |
KR1020070101238A KR20080033075A (ko) | 2006-10-11 | 2007-10-09 | 반도체 장치의 제조 방법, 전자 기기의 제조 방법 및반도체 제조 장치 |
TW096137865A TW200834673A (en) | 2006-10-11 | 2007-10-09 | Method for fabricating a semiconductor device, method for fabricating an electronic device, and semiconductor fabricating apparatus |
CNA2007101801026A CN101162687A (zh) | 2006-10-11 | 2007-10-10 | 半导体装置的制法、电子仪器的制法和半导体制造装置 |
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JP2006277956A JP4362834B2 (ja) | 2006-10-11 | 2006-10-11 | 半導体装置の製造方法、電子機器の製造方法および半導体製造装置 |
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JP2008098376A JP2008098376A (ja) | 2008-04-24 |
JP4362834B2 true JP4362834B2 (ja) | 2009-11-11 |
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Country Status (5)
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US (1) | US20080087213A1 (ja) |
JP (1) | JP4362834B2 (ja) |
KR (1) | KR20080033075A (ja) |
CN (1) | CN101162687A (ja) |
TW (1) | TW200834673A (ja) |
Families Citing this family (8)
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JP4453021B2 (ja) * | 2005-04-01 | 2010-04-21 | セイコーエプソン株式会社 | 半導体装置の製造方法及び半導体製造装置 |
JP4453693B2 (ja) * | 2005-11-14 | 2010-04-21 | セイコーエプソン株式会社 | 半導体装置の製造方法及び電子機器の製造方法 |
TWI341872B (en) * | 2006-08-07 | 2011-05-11 | Ind Tech Res Inst | Plasma deposition apparatus and depositing method thereof |
JP4407685B2 (ja) | 2006-10-11 | 2010-02-03 | セイコーエプソン株式会社 | 半導体装置の製造方法および電子機器の製造方法 |
US8445364B2 (en) * | 2008-06-02 | 2013-05-21 | Corning Incorporated | Methods of treating semiconducting materials including melting and cooling |
KR101558519B1 (ko) * | 2010-09-15 | 2015-10-08 | 삼성디스플레이 주식회사 | 유기물 증착 장치 및 증착 방법 |
US9076742B2 (en) * | 2010-11-05 | 2015-07-07 | Sharp Kabushiki Kaisha | Oxidation annealing device and method for fabricating thin film transistor using oxidation annealing |
CN106087040B (zh) * | 2016-07-14 | 2018-07-27 | 京东方科技集团股份有限公司 | 半导体多晶化***和对单晶半导体基板进行多晶化的方法 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3272591A (en) * | 1959-05-08 | 1966-09-13 | Union Carbide Corp | Production of single crystals from incongruently melting material |
US3870472A (en) * | 1969-11-26 | 1975-03-11 | Joseph A Adamski | Method and apparatus for growing crystals by annealing the crystal after formation |
US3652431A (en) * | 1970-03-12 | 1972-03-28 | Julian Louis Reynolds | Method of operating an electrolysis cell for the production of gases under hydrostatic pressure |
US3876382A (en) * | 1970-03-24 | 1975-04-08 | Siemens Ag | Verneuil apparatus for growing spinel-type oxide monocrystals |
DE2324783A1 (de) * | 1973-05-16 | 1974-12-12 | Siemens Ag | Verfahren und vorrichtung zum herstellen eines kristalls nach verneuil |
US4525223A (en) * | 1978-09-19 | 1985-06-25 | Noboru Tsuya | Method of manufacturing a thin ribbon wafer of semiconductor material |
US4494300A (en) * | 1981-06-30 | 1985-01-22 | International Business Machines, Inc. | Process for forming transistors using silicon ribbons as substrates |
US4466179A (en) * | 1982-10-19 | 1984-08-21 | Harris Corporation | Method for providing polysilicon thin films of improved uniformity |
JPH0824104B2 (ja) * | 1991-03-18 | 1996-03-06 | 株式会社半導体エネルギー研究所 | 半導体材料およびその作製方法 |
JP3105770B2 (ja) * | 1995-09-29 | 2000-11-06 | 日本電気株式会社 | 半導体装置の製造方法 |
US6000789A (en) * | 1996-04-23 | 1999-12-14 | Fuji Xerox Co., Ltd. | Printer and ink tank |
DE59706065D1 (de) * | 1996-09-26 | 2002-02-21 | Siemens Ag | Hitzeschildkomponente mit kühlfluidrückführung und hitzeschildanordnung für eine heissgasführende komponente |
JP3917698B2 (ja) * | 1996-12-12 | 2007-05-23 | 株式会社半導体エネルギー研究所 | レーザーアニール方法およびレーザーアニール装置 |
JPH11145148A (ja) * | 1997-11-06 | 1999-05-28 | Tdk Corp | 熱プラズマアニール装置およびアニール方法 |
CN1130756C (zh) * | 1998-02-13 | 2003-12-10 | 精工爱普生株式会社 | 半导体装置的制造方法及热处理装置 |
JP3472482B2 (ja) * | 1998-06-30 | 2003-12-02 | 富士通株式会社 | 半導体装置の製造方法と製造装置 |
JP2000094710A (ja) * | 1998-09-24 | 2000-04-04 | Seiko Epson Corp | 印刷ヘッド装置、インクジェットプリンタおよびインクカートリッジ |
JP2000219523A (ja) * | 1999-01-28 | 2000-08-08 | Nikon Corp | 石英ガラスの成形方法、成形装置、及びそれにより得られた石英ガラス |
AU2002243617A1 (en) * | 2001-01-17 | 2002-07-30 | Neophotonics Corporation | Optical materials with selected index-of-refraction |
US7253032B2 (en) * | 2001-04-20 | 2007-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Method of flattening a crystallized semiconductor film surface by using a plate |
JP2004281998A (ja) * | 2003-01-23 | 2004-10-07 | Seiko Epson Corp | トランジスタとその製造方法、電気光学装置、半導体装置並びに電子機器 |
JP4423068B2 (ja) * | 2004-03-03 | 2010-03-03 | 信越化学工業株式会社 | 光ファイバ用多孔質母材の製造方法及びガラス母材 |
US7491431B2 (en) * | 2004-12-20 | 2009-02-17 | Nanogram Corporation | Dense coating formation by reactive deposition |
JP4453021B2 (ja) * | 2005-04-01 | 2010-04-21 | セイコーエプソン株式会社 | 半導体装置の製造方法及び半導体製造装置 |
JP4453693B2 (ja) * | 2005-11-14 | 2010-04-21 | セイコーエプソン株式会社 | 半導体装置の製造方法及び電子機器の製造方法 |
JP4434167B2 (ja) * | 2006-03-28 | 2010-03-17 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JP4407685B2 (ja) * | 2006-10-11 | 2010-02-03 | セイコーエプソン株式会社 | 半導体装置の製造方法および電子機器の製造方法 |
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2006
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2007
- 2007-10-05 US US11/905,930 patent/US20080087213A1/en not_active Abandoned
- 2007-10-09 KR KR1020070101238A patent/KR20080033075A/ko not_active Application Discontinuation
- 2007-10-09 TW TW096137865A patent/TW200834673A/zh unknown
- 2007-10-10 CN CNA2007101801026A patent/CN101162687A/zh active Pending
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US20080087213A1 (en) | 2008-04-17 |
TW200834673A (en) | 2008-08-16 |
JP2008098376A (ja) | 2008-04-24 |
KR20080033075A (ko) | 2008-04-16 |
CN101162687A (zh) | 2008-04-16 |
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