JP4342868B2 - Deposition equipment - Google Patents

Deposition equipment Download PDF

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JP4342868B2
JP4342868B2 JP2003291037A JP2003291037A JP4342868B2 JP 4342868 B2 JP4342868 B2 JP 4342868B2 JP 2003291037 A JP2003291037 A JP 2003291037A JP 2003291037 A JP2003291037 A JP 2003291037A JP 4342868 B2 JP4342868 B2 JP 4342868B2
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vapor deposition
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container body
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敏夫 根岸
博 菊地
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Ulvac Inc
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Description

本発明は成膜装置に関し、特に、蒸着法により薄膜を形成する成膜装置に関する。   The present invention relates to a film forming apparatus, and more particularly to a film forming apparatus that forms a thin film by a vapor deposition method.

有機ＥＬ素子の発光層等に用いられる機能性有機薄膜の成膜には、成膜装置として従来より真空蒸着装置が用いられている。
図８の符号１０１は従来技術の成膜装置を示している。この成膜装置１０１は真空槽１０２と、真空槽１０２内部に配置された蒸着源１０３とを有している。蒸着源１０３は有機蒸着材料１１９を収容する容器１３１を有しており、真空槽１０２内部を真空排気し、真空雰囲気を形成した状態で、加熱ヒータ１２５に通電し、容器１３１を加熱すると有機蒸着材料１１９が熱伝導により昇温し、有機蒸着材料１１９の蒸気が発生する。 Conventionally, a vacuum evaporation apparatus has been used as a film forming apparatus for forming a functional organic thin film used for a light emitting layer of an organic EL element.
Reference numeral 101 in FIG. 8 denotes a conventional film forming apparatus. The film forming apparatus 101 includes a vacuum chamber 102 and a vapor deposition source 103 disposed inside the vacuum chamber 102. The vapor deposition source 103 has a container 131 for storing the organic vapor deposition material 119. When the inside of the vacuum chamber 102 is evacuated and a vacuum atmosphere is formed, the heater 125 is energized and the container 131 is heated to perform organic vapor deposition. The temperature of the material 119 is increased by heat conduction, and vapor of the organic vapor deposition material 119 is generated.

容器１３１の開口は蓋部材１３７で覆われており、有機蒸着材料１１９の蒸気はまず容器１３１の蓋部材１３７で覆われた空間に充満する。蓋部材１３７は容器１３１に密着しており、容器１３１が加熱されると熱伝導によって蓋部材１３７も昇温するので、有機蒸着材料１１９の蒸気は蓋部材１３７に接触しても析出することがなく、蓋部材１３７を貫通する放出口１３８を通って真空槽１０２の内部に放出される。   The opening of the container 131 is covered with a lid member 137, and the vapor of the organic vapor deposition material 119 first fills the space covered with the lid member 137 of the container 131. The lid member 137 is in close contact with the container 131, and when the container 131 is heated, the temperature of the lid member 137 is also increased by heat conduction. Therefore, the vapor of the organic vapor deposition material 119 may be deposited even if it contacts the lid member 137. Instead, it is discharged into the vacuum chamber 102 through the discharge port 138 that penetrates the lid member 137.

基板１１３は真空槽１０２内部の放出口１３８と対向する位置で基板ホルダ１１１に保持されており、放出口１３８から放出された蒸気が基板１１３の表面に到達すると、基板１１３表面に有機蒸着材料の薄膜が形成される。   The substrate 113 is held by the substrate holder 111 at a position facing the discharge port 138 inside the vacuum chamber 102. When the vapor discharged from the discharge port 138 reaches the surface of the substrate 113, the surface of the substrate 113 is filled with an organic vapor deposition material. A thin film is formed.

容器１３１の底面には冷却手段１２１が密着して取り付けられており、容器１０５は加熱ヒータ１２５で加熱されると同時に冷却手段１２１で冷却され、成膜中は有機蒸着材料１１９は一定温度に維持されるようになっているので、有機蒸着材料１１９の蒸気発生量は一定であり、従って、有機薄膜の成膜速度は一定になる。   A cooling means 121 is closely attached to the bottom surface of the container 131. The container 105 is heated by the heater 125 and simultaneously cooled by the cooling means 121, and the organic vapor deposition material 119 is maintained at a constant temperature during film formation. Thus, the vapor generation amount of the organic vapor deposition material 119 is constant, and therefore the film formation rate of the organic thin film is constant.

また、容器１３１を交換する場合には、加熱ヒータ１２５への通電を停止すれば、冷却手段１２１によって有機蒸着材料１１９が冷却されるので、有機蒸着材料１１９の蒸気の発生を停止させることができる。
しなしながら、従来の成膜装置１０１では有機蒸着材料１１９を冷却するときに、有機蒸着材料が放出口１３８の内壁で析出し、放出口が有機蒸着材料で塞がれる場合があった。
特開平１０−１９５６３９号公報 特開２００２−３４８６５９号公報 特開２００３−１４７５１０号公報 Further, when the container 131 is replaced, if the energization to the heater 125 is stopped, the organic vapor deposition material 119 is cooled by the cooling means 121, so that the generation of the vapor of the organic vapor deposition material 119 can be stopped. .
However, in the conventional film forming apparatus 101, when the organic vapor deposition material 119 is cooled, the organic vapor deposition material may be deposited on the inner wall of the discharge port 138, and the discharge port may be blocked by the organic vapor deposition material.
Japanese Patent Laid-Open No. 10-195539 JP 2002-348659 A JP 2003-147510 A

本発明は上記従来技術の不都合を解決するために創作されたものであり、その目的は、蒸着材料を冷却する際に、放出口に蒸着材料が析出し難い成膜装置を提供することである。   The present invention was created to solve the above-described disadvantages of the prior art, and an object of the present invention is to provide a film forming apparatus in which the vapor deposition material is difficult to deposit at the discharge port when the vapor deposition material is cooled. .

上記課題を解決するために請求項１記載の発明は、真空槽と、前記真空槽内部に配置された蒸着源とを有し、前記蒸着源は、蒸着容器と、加熱手段と、冷却手段とを有し、前記蒸着容器は熱伝導性の容器本体と、前記容器本体に設けられた収容孔と、前記収容孔の開口を覆う蓋部材と、前記蓋部材を貫通する第一の放出口とを有し、前記加熱手段は前記容器本体の周囲に配置され、前記収容孔に有機蒸着材料を収容した状態で前記加熱手段を動作させると、前記有機蒸着材料が昇温して蒸気が発生し、前記蒸気が前記第一の放出口を通って前記蒸着容器の外部に放出されるように構成され、前記冷却手段は前記容器本体の一面に配置され、前記容器本体を冷却するように構成された成膜装置であって、前記真空槽に接続された熱媒体ガス導入系を有し、前記熱媒体ガス導入系から前記真空槽内部に熱媒体ガスが導入されると、前記熱媒体ガスが前記第一の放出口を通って前記収容孔内部に導入されるように構成され、前記収容孔は、主材料を収容する主収容孔と、副材料を収容する副収容孔とを有し、前記主収容孔の数と、前記副収容孔の数はそれぞれ複数個であって、前記副収容孔は一方向に並べられ、前記主収容孔は前記副収容孔が並べられた列の両側に配置された成膜装置である。
請求項２記載の発明は、真空槽と、前記真空槽内部に配置された蒸着源とを有し、前記蒸着源は、蒸着容器と、加熱手段と、冷却手段と、飛沫防止手段とを有し、前記蒸着容器は前記飛沫防止手段で覆われ、前記加熱手段は前記容器本体の周囲に配置され、前記収容孔に有機蒸着材料を収容した状態で前記加熱手段を動作させると、前記有機蒸着材料が昇温して蒸気が発生し、前記蒸気が前記飛沫防止手段に覆われた空間に放出された後、前記飛沫防止手段に設けられた第二の放出口を通って前記真空槽内部に放出されるように構成され、前記冷却手段は前記容器本体の一面に配置され、前記容器本体を冷却するように構成された成膜装置であって、前記真空槽に接続された熱媒体ガス導入系を有し、前記熱媒体ガス導入系から前記真空槽内部に熱媒体ガスが導入されると、前記熱媒体ガスが前記第二の放出口を通って前記飛沫防止手段で覆われた空間に導入されるように構成された成膜装置である。
請求項３記載の発明は、請求項１又は請求項２のいずれか１項記載の成膜装置であって、前記収容孔は、主材料を収容する主収容孔と、副材料を収容する副収容孔とを有し、前記主収容孔の数は、前記副収容孔よりも多い複数個であり、前記主収容孔は、前記副収容孔の周囲に配置された成膜装置である。
請求項４記載の発明は、請求項１乃至請求項３のいずれか１項記載の成膜装置であって、前記容器本体と前記冷却手段とを相対的に移動させる移動手段を有し、前記移動手段を動作させると前記容器本体と前記冷却手段とが接触又は離間するようにされた成膜装置である。

In order to solve the above-mentioned problem, the invention according to claim 1 includes a vacuum chamber and a vapor deposition source disposed inside the vacuum chamber, and the vapor deposition source includes a vapor deposition container, a heating unit, and a cooling unit. The vapor deposition container includes a thermally conductive container body, a housing hole provided in the container body, a lid member covering the opening of the housing hole, and a first discharge port penetrating the lid member; The heating means is disposed around the container body, and when the heating means is operated in a state where the organic vapor deposition material is accommodated in the accommodation hole, the organic vapor deposition material is heated to generate steam. The vapor is discharged to the outside of the vapor deposition container through the first discharge port, and the cooling means is disposed on one surface of the container main body, and is configured to cool the container main body. Introducing a heating medium gas connected to the vacuum chamber And when the heat medium gas is introduced into the vacuum chamber from the heat medium gas introduction system, the heat medium gas is introduced into the housing hole through the first discharge port. The housing hole has a main housing hole for housing the main material and a sub housing hole for housing the sub material, and the number of the main housing holes and the number of the sub housing holes are plural. The sub-accommodating holes are arranged in one direction, and the main accommodating holes are film forming apparatuses arranged on both sides of the row in which the sub-accommodating holes are arranged .
The invention described in claim 2 includes a vacuum chamber and a vapor deposition source disposed inside the vacuum chamber, and the vapor deposition source includes a vapor deposition container, a heating unit, a cooling unit, and a splash prevention unit. The vapor deposition container is covered with the splash preventing means, the heating means is disposed around the container body, and the organic vapor deposition is performed when the heating means is operated in a state where the organic vapor deposition material is accommodated in the accommodation hole. After the temperature of the material rises and steam is generated, and the steam is released into the space covered by the splash prevention means, the inside of the vacuum chamber passes through a second discharge port provided in the splash prevention means. A film forming apparatus configured to cool the container body, the cooling means being arranged on one surface of the container body, and introducing a heat medium gas connected to the vacuum chamber In the vacuum chamber from the heat medium gas introduction system When the heat medium gas is introduced into a configured film forming apparatus as the heating medium gas is introduced into covered space said splash preventing means through said second outlet.
According to a third aspect of the present invention, there is provided the film forming apparatus according to the first or second aspect, wherein the accommodation hole includes a main accommodation hole that accommodates a main material and a sub-accommodation that accommodates a submaterial. A plurality of main housing holes, the number of the main housing holes being larger than the number of the sub housing holes, and the main housing holes are film forming apparatuses arranged around the sub housing holes.
Invention of Claim 4 is the film-forming apparatus of any one of Claim 1 thru | or 3 , Comprising: It has a moving means to relatively move the said container main body and the said cooling means, The said The film forming apparatus is configured such that when the moving means is operated, the container main body and the cooling means are brought into contact with or separated from each other.

本発明は上記のように構成されており、有機蒸着材料を冷却するときに熱媒体ガスを導入し、真空槽内部の圧力を成膜時よりも高くすれば、真空槽の内部空間の熱伝導率が上昇する。
熱伝導率が上昇すると、温度が高い部分から温度の低い部分に熱が伝わりやすくなるので、有機蒸着材料の蒸気が発生し始める温度を蒸気発生温度とすると、第一、第二の放出口付近の温度が蒸気発生温度以下に下がるタイミングと、有機蒸着材料が蒸気発生温度以下に下がるタイミングとの時間差が調整され、有機蒸着材料が第一、第二の放出口を通るときに、析出しにくくなる。 The present invention is configured as described above. When a heating medium gas is introduced when the organic vapor deposition material is cooled and the pressure inside the vacuum chamber is set higher than that during film formation, the heat conduction in the internal space of the vacuum chamber is achieved. The rate goes up.
When the thermal conductivity increases, heat is easily transferred from the high temperature part to the low temperature part. Therefore, assuming that the temperature at which the vapor of the organic vapor deposition material starts to be generated is the vapor generation temperature, the vicinity of the first and second outlets The time difference between the timing when the temperature of the organic vapor deposition material falls below the vapor generation temperature and the timing when the organic vapor deposition material falls below the vapor generation temperature is adjusted, and when the organic vapor deposition material passes through the first and second discharge ports, it hardly deposits Become.

熱媒体ガスの導入によって、真空槽内部の圧力を０．５Ｔｏｒｒ（６６．６６Ｐａ）以上にすれば、真空槽内部で気体の性質が分子流から粘性流に変わり、対流が発生するので、温度が高い部分から低い部分へ効率的に熱を伝えることができる。   If the pressure inside the vacuum chamber is increased to 0.5 Torr (66.66 Pa) or more by introducing the heat medium gas, the gas property changes from a molecular flow to a viscous flow inside the vacuum chamber, and convection occurs. Heat can be transferred efficiently from the high part to the low part.

本発明の成膜装置は熱媒体ガス導入系を有しており、有機蒸着材料を冷却するときに、熱媒体ガスの導入によって真空槽内部の圧力を高くすれば、熱伝導率が高くなり、温度の高い部分から温度の低い部分へ熱が伝わるようになるので、真空槽内部が均一に温度低下する。従って、第一、第二の放出口の内部に有機蒸着材料を析出させずに、有機蒸着材料を冷却し、その蒸気の発生を停止させることができる。   The film forming apparatus of the present invention has a heat medium gas introduction system, and when the organic vapor deposition material is cooled, if the pressure inside the vacuum chamber is increased by introducing the heat medium gas, the thermal conductivity is increased, Since heat is transferred from the high temperature portion to the low temperature portion, the temperature inside the vacuum chamber is uniformly lowered. Therefore, the organic vapor deposition material can be cooled and the generation of the vapor can be stopped without depositing the organic vapor deposition material inside the first and second discharge ports.

以下で図面を参照し、本発明の実施形態について説明する。
図１の符号１は本発明の成膜装置の第一例を示している。この成膜装置１は真空槽１２と、真空槽１２内部の底壁側に配置された蒸着源２０と、真空槽２内部の蒸着源２０の上方に配置された基板ホルダ１１とを有している。 Embodiments of the present invention will be described below with reference to the drawings.
Reference numeral 1 in FIG. 1 represents a first example of the film forming apparatus of the present invention. The film forming apparatus 1 includes a vacuum chamber 12, a vapor deposition source 20 disposed on the bottom wall side inside the vacuum chamber 12, and a substrate holder 11 disposed above the vapor deposition source 20 inside the vacuum chamber 2. Yes.

蒸着源２０は、蒸着容器３０と、第一、第二の加熱手段２５、２６と、冷却手段２１と、飛沫防止手段２７とを有してる。冷却手段２１は真空槽１２の底壁上に配置されている。飛沫防止手段２７は容器状であって、その底板２８が基板ホルダ１１に向けられ、開口部分が冷却手段２１上に乗せられている。   The vapor deposition source 20 includes a vapor deposition container 30, first and second heating units 25 and 26, a cooling unit 21, and a splash preventing unit 27. The cooling means 21 is disposed on the bottom wall of the vacuum chamber 12. The splash preventing means 27 has a container shape, and its bottom plate 28 is directed to the substrate holder 11, and the opening portion is placed on the cooling means 21.

蒸着容器３０は飛沫防止手段２７の内部に配置されている。蒸着容器３０はグラファイトのような熱伝導性材料が円柱状に成型された容器本体３１と、容器本体３１の一底面に形成された有底の収容孔３２とを有しており、収容孔３２の開口が基板ホルダ１１に向けられ、底部が冷却手段２１上に配置されている。   The vapor deposition container 30 is disposed inside the splash prevention means 27. The vapor deposition container 30 includes a container main body 31 in which a thermally conductive material such as graphite is formed in a cylindrical shape, and a bottomed accommodation hole 32 formed on one bottom surface of the container main body 31. The opening is directed to the substrate holder 11 and the bottom is disposed on the cooling means 21.

第一、第二の加熱手段２５、２６は細長の抵抗素子で構成されており、容器本体３１の外周側面には第一の加熱手段２５が巻き回され、飛沫防止手段２７の外周側面と底板２８には第二の加熱手段２６が巻き回されている。   The first and second heating means 25, 26 are constituted by elongated resistance elements, and the first heating means 25 is wound around the outer peripheral side surface of the container body 31, and the outer peripheral side surface and the bottom plate of the splash preventing means 27. The second heating means 26 is wound around 28.

第一、第二の加熱手段２５、２６は真空槽１２外部に配置された電源装置１５に接続されており、電源装置１５を起動し、第一、第二の加熱手段２５、２６に通電すると、第一、第二の加熱手段２５、２６が発熱し、容器本体３１と飛沫防止手段２７がそれぞれ昇温するようになっている。   The first and second heating means 25, 26 are connected to the power supply device 15 arranged outside the vacuum chamber 12. When the power supply device 15 is activated and the first and second heating means 25, 26 are energized. The first and second heating means 25 and 26 generate heat, and the container body 31 and the splash prevention means 27 are heated.

真空槽１２には真空排気系１７が接続されている。収容孔３２に有機蒸着材料１９が配置した状態で真空排気系１７を動作させて、真空槽１２内部に所定圧力の真空雰囲気を形成し、容器本体３１を昇温させると、熱伝導によって有機蒸着材料１９が加熱され、その表面から有機蒸着材料１９を構成する物質の蒸気が発生する。   A vacuum exhaust system 17 is connected to the vacuum chamber 12. When the evacuation system 17 is operated with the organic vapor deposition material 19 placed in the accommodation hole 32 to form a vacuum atmosphere at a predetermined pressure inside the vacuum chamber 12 and the container body 31 is heated, the organic vapor deposition is performed by heat conduction. The material 19 is heated, and vapor of a substance constituting the organic vapor deposition material 19 is generated from the surface.

容器本体３１には収容孔３２の開口を覆う蓋部材３７が取り付けられている。蓋部材３７には直径１ｍｍ〜５ｍｍ程度の貫通孔からなる第一の放出口３８が設けられており、有機蒸着材料の蒸気は第一の放出口３８を通って蒸着容器３０の外部に放出され、飛沫防止手段２７の内部に一旦充満する。   A lid member 37 that covers the opening of the accommodation hole 32 is attached to the container body 31. The lid member 37 is provided with a first discharge port 38 formed of a through hole having a diameter of about 1 mm to 5 mm, and the vapor of the organic vapor deposition material is discharged to the outside of the vapor deposition container 30 through the first discharge port 38. The inside of the splash preventing means 27 is once filled.

飛沫防止手段２７は第二の加熱手段２６によって予め所定温度以上に加熱されており、飛沫防止手段２７の内部に充満した蒸気は、飛沫防止手段２７の内壁に接触しても冷却されないので、有機蒸着材料が飛沫防止手段２７の内壁に析出することがない。   The splash preventing means 27 is heated to a predetermined temperature or higher by the second heating means 26 in advance, and the vapor filled in the splash preventing means 27 is not cooled even when it comes into contact with the inner wall of the splash preventing means 27. The vapor deposition material does not deposit on the inner wall of the splash preventing means 27.

飛沫防止手段２７はその底板２８を貫通する貫通孔からなる第二の放出口３９を有しており、上述したように飛沫防止手段２７は予め加熱されているので、有機蒸着材料の蒸気は析出することなく第二の放出口３９通過し、真空槽１２内部に放出される。   The splash preventing means 27 has a second discharge port 39 consisting of a through-hole penetrating the bottom plate 28. Since the splash preventing means 27 is heated in advance as described above, the vapor of the organic vapor deposition material is deposited. Without passing, it passes through the second discharge port 39 and is discharged into the vacuum chamber 12.

第二の放出口３９の径は直径１ｍｍ程度と小さく、有機蒸着材料の蒸気は飛沫防止手段２７の内部に一旦充満した後、その第二の放出口３９を通って真空槽１２の内部空間に放出されるので、真空槽１２内部には常に一定量の蒸気が放出されることになる。   The diameter of the second discharge port 39 is as small as about 1 mm, and the vapor of the organic vapor deposition material once fills the inside of the splash preventing means 27 and then passes through the second discharge port 39 into the internal space of the vacuum chamber 12. Since it is released, a certain amount of vapor is always released into the vacuum chamber 12.

図１の符号１３は基板ホルダ１１に保持された基板を示しており、基板１３は第二の放出口３９と対向する位置で保持されているので、シャッター１４を開けると、第二の放出口３９から放出された蒸気が基板１３に到達し、基板１３の表面に有機蒸着材料の薄膜が成長する。   Reference numeral 13 in FIG. 1 denotes a substrate held by the substrate holder 11. Since the substrate 13 is held at a position facing the second discharge port 39, the second discharge port is opened when the shutter 14 is opened. The vapor released from 39 reaches the substrate 13, and a thin film of an organic vapor deposition material grows on the surface of the substrate 13.

冷却手段２１の内部には、水である冷却媒体２３が循環する循環路２２が埋設されており、成膜の際に冷却媒体２３の流量と、第一の加熱手段２５への通電量を調整し、有機蒸着材料１９の温度を、蒸気が安定して発生する加熱温度に維持すれば、常に一定量の蒸気が安定して放出するので、有機薄膜の成膜速度が一定になる。   A circulation path 22 in which a cooling medium 23 that is water circulates is embedded inside the cooling means 21, and the flow rate of the cooling medium 23 and the amount of current supplied to the first heating means 25 are adjusted during film formation. If the temperature of the organic vapor deposition material 19 is maintained at a heating temperature at which vapor is stably generated, a constant amount of vapor is always released stably, so that the deposition rate of the organic thin film becomes constant.

このとき、収容孔３２内部の有機蒸着材料１９が突沸し、第一の放出口３８から有機蒸着材料の液滴が飛散したとしても、その液滴は飛沫防止手段２７によって遮られるので、基板１３に成長する有機薄膜に液滴が混入せず、膜質の良い有機薄膜が成長する。   At this time, even if the organic vapor deposition material 19 inside the accommodation hole 32 bumps and the droplets of the organic vapor deposition material scatter from the first discharge port 38, the droplets are blocked by the splash preventing means 27. An organic thin film with good film quality is grown without droplets being mixed into the organic thin film that grows rapidly.

基板１３の表面に所定膜厚の有機薄膜が形成されたところで、有機蒸着材料１９の加熱を続けながら、シャッター１４を閉じて基板１３を蒸気から遮断し、有機薄膜が形成された成膜処理後の基板１３と、未処理の基板１３とを交換し、シャッター１４を開けて成膜を続行する。   After the organic thin film having a predetermined film thickness is formed on the surface of the substrate 13, while the organic vapor deposition material 19 is continuously heated, the shutter 14 is closed to shield the substrate 13 from the vapor, and after the film forming process in which the organic thin film is formed. The substrate 13 and the unprocessed substrate 13 are exchanged, the shutter 14 is opened, and film formation is continued.

複数枚の基板１３の成膜が終了し、収容孔３２内部の有機蒸着材料１９が所定量よりも少なくなったところで、第一、第二の加熱手段２５、２６への通電を停止すると共に、冷却媒体２３の循環路２２に冷却媒体２３を循環させ、有機蒸着材料１９を冷却して、蒸気の発生を停止させる。   When the film formation of the plurality of substrates 13 is completed and the organic vapor deposition material 19 inside the accommodation hole 32 is less than a predetermined amount, energization to the first and second heating means 25 and 26 is stopped, The cooling medium 23 is circulated through the circulation path 22 of the cooling medium 23, the organic vapor deposition material 19 is cooled, and the generation of vapor is stopped.

蓋部材３７や飛沫防止手段２７はステンレス、タンタル、グラファイト、アルミナのような金属や、熱伝導性の良いセラミック材料で構成されており、全体の熱容量も小さい。蓋部材３７は容器本体３１を介して冷却手段２１に接触し、飛沫防止手段２７は冷却手段２２に接触しているので、有機蒸着材料１９を冷却する場合には、有機蒸着材料１９よりも蓋部材３７や飛沫防止手段２７の温度が先行して低くなりやすい。   The lid member 37 and the splash preventing means 27 are made of a metal such as stainless steel, tantalum, graphite, or alumina, or a ceramic material having good thermal conductivity, and the overall heat capacity is small. Since the lid member 37 is in contact with the cooling means 21 via the container body 31 and the splash prevention means 27 is in contact with the cooling means 22, when the organic vapor deposition material 19 is cooled, the lid is more than the organic vapor deposition material 19. The temperature of the member 37 and the splash preventing means 27 tends to decrease in advance.

蓋部材３７や底板２８が、有機蒸着材料１９の蒸気の発生が停止する前に、蒸気発生温度よりも低い温度になると、蒸気が第一、第二の放出口３８、３９を通るときに冷却され、第一、第二の放出口３８、３９の内壁に有機蒸着材料が析出し、それが原因で第一、第二の放出口３８、３９が閉塞する場合もある。   If the lid member 37 and the bottom plate 28 reach a temperature lower than the vapor generation temperature before the vapor generation of the organic vapor deposition material 19 stops, the vapor is cooled when passing through the first and second discharge ports 38 and 39. In some cases, the organic vapor deposition material is deposited on the inner walls of the first and second discharge ports 38 and 39, and the first and second discharge ports 38 and 39 are blocked.

本発明の成膜装置１は、真空槽１２に接続された熱媒体ガス導入系１８を有している。有機蒸着材料１９を冷却するときに、真空排気系１７の排気速度を落とすと共に、熱媒体ガス導入系１８から窒素ガスである熱媒体ガスを導入し、真空槽１２内部の圧力を６６.６６Ｐａ以上と成膜時よりも高くすれば、真空槽１２の内部空間の熱伝導率が上がり、加熱手段２５、２６等の温度の高い部分から低い部分へ熱が伝わるので、蓋部材３７及び底板２８が暖められる。   The film forming apparatus 1 of the present invention has a heat medium gas introduction system 18 connected to a vacuum chamber 12. When the organic vapor deposition material 19 is cooled, the exhaust speed of the vacuum exhaust system 17 is reduced and a heat medium gas that is a nitrogen gas is introduced from the heat medium gas introduction system 18 so that the pressure inside the vacuum chamber 12 is 66.66 Pa or more. If the temperature is higher than that at the time of film formation, the thermal conductivity of the internal space of the vacuum chamber 12 is increased, and heat is transferred from the high temperature portion such as the heating means 25 and 26 to the low temperature portion. Warmed.

また、容器本体３１の底面は冷却手段２１に密着しており、第一、第二の放出口３８、３９は有機蒸着材料１９を挟んで冷却手段２１とは反対側に位置しているので、蓋部材３７の第一の放出口３８付近の温度と、底板２８の第二の放出口３９付近の温度は、収容孔３２に残った有機蒸着材料１９よりも早く蒸気発生温度以下に低下しない。   Further, the bottom surface of the container body 31 is in close contact with the cooling means 21, and the first and second discharge ports 38 and 39 are located on the opposite side of the cooling means 21 with the organic vapor deposition material 19 in between. The temperature in the vicinity of the first discharge port 38 of the lid member 37 and the temperature in the vicinity of the second discharge port 39 of the bottom plate 28 do not fall below the vapor generation temperature faster than the organic vapor deposition material 19 remaining in the accommodation hole 32.

従って、有機蒸着材料１９の蒸気の発生が停止するまで、第一、第二の放出口３８、３９は比較的高温に保たれているため、有機蒸着材料が第一、第二の放出口３８、３９の内壁に析出することがなく、第一、第二の放出口３８、３９が有機蒸着材料で塞がれることがない。   Accordingly, since the first and second discharge ports 38 and 39 are kept at a relatively high temperature until the generation of the vapor of the organic vapor deposition material 19 is stopped, the organic vapor deposition material is kept at the first and second discharge ports 38. , 39, and the first and second discharge ports 38, 39 are not blocked by the organic vapor deposition material.

蒸着容器３０は不図示の固定部材で冷却手段２１に取り付けられており、容器本体３１が十分に冷却された後、蒸着容器３０を冷却手段２１から取り外し、真空槽１２外部へ搬出する。搬出された蒸着容器３０は、容器本体３１から蓋部材３７を取り外した後、容器本体３１を焼成して不純物を取り除けば、再び収容孔３２に有機蒸着材料を配置し、成膜に用いることができる。   The vapor deposition container 30 is attached to the cooling means 21 by a fixing member (not shown), and after the container main body 31 is sufficiently cooled, the vapor deposition container 30 is removed from the cooling means 21 and carried out of the vacuum chamber 12. After the lid member 37 is removed from the container main body 31 after removing the lid member 37 from the container main body 31, the organic vapor deposition material is again disposed in the accommodation hole 32 and used for film formation. it can.

尚、この装置では、冷却手段２１を真空槽１２に密着して配置されており、蒸着容器３０や飛沫防止手段２７だけではなく、真空槽１２も冷却されるので、成膜工程で真空槽１２が過熱されないようになっている。また、蒸着源２０の周囲は防着板２４で取り囲まれているので、有機蒸着材料の蒸気が真空槽１２の側壁に付着することがない。   In this apparatus, the cooling means 21 is disposed in close contact with the vacuum chamber 12, and not only the vapor deposition vessel 30 and the splash prevention means 27 but also the vacuum chamber 12 is cooled. Is not overheated. Further, since the periphery of the vapor deposition source 20 is surrounded by the deposition preventing plate 24, the vapor of the organic vapor deposition material does not adhere to the side wall of the vacuum chamber 12.

以上は、蒸着容器３０が１個の収容孔を有する場合について説明したが、本発明はこれに限定されるものではない。
図２の符号２は本発明第二例の成膜装置を示している。この成膜装置２は、容器本体３１に収容孔が複数個設けられた以外は、上述した成膜装置１と同じ構造を有しており、ここでは１個の収容孔に有機薄膜の副材料を配置し、他の複数個の収容孔に主材料を配置し、主材料に少量の副材料が含有された有機薄膜を形成するようになっている。 Although the case where the vapor deposition container 30 has one accommodation hole was demonstrated above, this invention is not limited to this.
Reference numeral 2 in FIG. 2 indicates a film forming apparatus of the second example of the present invention. The film forming apparatus 2 has the same structure as the above-described film forming apparatus 1 except that a plurality of receiving holes are provided in the container body 31, and here, the auxiliary material of the organic thin film is provided in one receiving hole. The main material is arranged in a plurality of other receiving holes, and an organic thin film containing a small amount of sub-material in the main material is formed.

図３は容器本体３１の収容孔が形成された面を示す平面図であり、同図の符号４２ａは主材料が配置される主収容孔を示し、符号４２ｂは副材料が配置される副収容孔を示している。副収容孔４２ｂは容器本体３１底面の略中央位置に配置され、主収容孔４２ａは副収容孔４２ｂの周囲を取り囲むように配置されている。   FIG. 3 is a plan view showing the surface of the container main body 31 on which the accommodation holes are formed. In FIG. The hole is shown. The sub-accommodating hole 42b is disposed at a substantially central position on the bottom surface of the container body 31, and the main accommodating hole 42a is disposed so as to surround the sub-accommodating hole 42b.

図２は主収容孔４２ａに主材料４９ａが配置され、副収容孔４２ｂに副材料４５ｂが配置された状態を示しており、ここでは、主材料４９ａと副材料４９ｂはステンレス製の内筒容器４５ａ、４５ｂに収容された状態で、主収容孔４２ａと副収容孔４２ｂに配置されている。   FIG. 2 shows a state in which the main material 49a is arranged in the main accommodation hole 42a and the submaterial 45b is arranged in the sub accommodation hole 42b. Here, the main material 49a and the submaterial 49b are made of a stainless steel inner cylinder container. In the state accommodated in 45a and 45b, it arrange | positions at the main accommodating hole 42a and the sub accommodating hole 42b.

この成膜装置２では、１つの容器本体３１に主収容孔４２ａと副収容孔４２ｂが設けられているため、第一の加熱手段２５によって容器本体３１を加熱すると主材料４９ａと副材料４９ｂの両方が加熱され、主材料４９ａの蒸気と副材料の蒸気４９ｂが発生する。   In the film forming apparatus 2, since the main housing hole 42 a and the sub housing hole 42 b are provided in one container main body 31, when the container main body 31 is heated by the first heating means 25, the main material 49 a and the sub material 49 b Both are heated, and steam of the main material 49a and steam of the secondary material 49b are generated.

各主収容孔４２ａの開口と副収容孔４２ｂの開口はそれぞれ蓋部材４７ａ、４７ｂで覆われており、主材料の蒸気と副材料の蒸気は、蓋部材４７ａ、４７ｂに設けられた第一の放出口をそれぞれを通って飛沫防止手段２７内部に放出される。図２、３の符号４８ａは、主収容孔４２ａを覆う蓋部材４７ａに設けられた放出口であって、主材料の蒸気を通す第一の放出口を示し、同図の符号４８ｂは副収容孔４２ｂを覆う蓋部材３７ｂに設けられた放出口であって、副材料の蒸気を通す第一の放出口を示している。   The opening of each main housing hole 42a and the opening of the sub housing hole 42b are covered with lid members 47a and 47b, respectively, and the vapor of the main material and the vapor of the sub material are the first provided in the lid members 47a and 47b. The droplets are discharged into the splash prevention means 27 through the discharge ports. Reference numeral 48a in FIGS. 2 and 3 is a discharge port provided in the lid member 47a covering the main storage hole 42a, and shows a first discharge port through which the vapor of the main material passes, and reference numeral 48b in FIG. A discharge port provided in the lid member 37b covering the hole 42b, which is a first discharge port through which the vapor of the secondary material passes.

主材料の蒸気と副材料の蒸気は飛沫防止手段２７内部に一旦充満すると、均一に混合されるので、第二の放出口３９からは主材料の蒸気と副材料の蒸気とが均一に混合された有機蒸着材料の蒸気が放出されることになる。従って、基板１３の表面には、主材料と副材料の分布が均一な有機薄膜が形成される。   Since the main material vapor and the sub material vapor are once mixed in the splash preventing means 27, they are uniformly mixed. Therefore, the main material vapor and the sub material vapor are uniformly mixed from the second discharge port 39. The vapor of the organic vapor deposition material will be released. Therefore, an organic thin film having a uniform distribution of the main material and the sub-material is formed on the surface of the substrate 13.

また、主収容孔４２ａの数は副収容孔４２ｂの数よりも多く、各主収容孔４２ａから放出される蒸気の合計量は、副収容孔４２ｂから放出される蒸気の量よりも多くなるので、有機薄膜は副材料よりも主材料を多く含有することになる。   Further, the number of main housing holes 42a is larger than the number of sub housing holes 42b, and the total amount of steam released from each main housing hole 42a is larger than the amount of steam released from the sub housing holes 42b. The organic thin film contains more main materials than sub-materials.

第一例の成膜装置１の場合と同じく、第二例の成膜装置２は容器本体３１が冷却手段２１上に配置されているので、容器本体３１が冷却されると、主収容孔４２ａ内部に残った主材料４９ａと、副収容孔４２ｂ内部に残った副材料４９ｂの両方が冷却される。   As in the case of the film forming apparatus 1 of the first example, since the container main body 31 is disposed on the cooling means 21 in the film forming apparatus 2 of the second example, when the container main body 31 is cooled, the main accommodation hole 42a. Both the main material 49a remaining inside and the submaterial 49b remaining inside the sub-accommodating hole 42b are cooled.

この成膜装置２においても、冷却工程で熱媒体ガスを導入し、真空槽１２内部の圧力を高くすることで、蓋部材４７ａ、４７ｂの第一放出口４８ａ、４８ｂ付近の温度と、飛沫防止手段２７の第二の放出口３９付近の温度を、主材料及び副材料の蒸気が発生している間は、蒸気発生温度よりも低くならないようにすれば、第一の放出口４８ａ、４８ｂの内壁に主材料や副材料が析出せず、また、第二の放出口３９の内壁に有機蒸着材料が析出しない。   Also in this film forming apparatus 2, the heat medium gas is introduced in the cooling process and the pressure inside the vacuum chamber 12 is increased, so that the temperature in the vicinity of the first discharge ports 48a and 48b of the lid members 47a and 47b and splash prevention If the temperature in the vicinity of the second discharge port 39 of the means 27 does not become lower than the steam generation temperature while the vapor of the main material and the sub-material is generated, the first discharge ports 48a and 48b have the same temperature. No main material or sub-material is deposited on the inner wall, and no organic vapor deposition material is deposited on the inner wall of the second discharge port 39.

第二の成膜装置２は、副収容孔４２ｂが容器本体３１の略中心位置に配置され、その周りに主収容孔４２ａが配置されていたが、本発明はこれに限定されるものではない。図４の符号６０は本発明の成膜装置に用いられる蒸着容器の他の例を示している。この蒸着容器６０の容器本体６１の形状は細長であり、容器本体６１はその長手方向を略水平に向けて真空槽１２内部に横設されている。   In the second film forming apparatus 2, the sub-accommodating hole 42b is disposed at the substantially central position of the container body 31, and the main accommodating hole 42a is disposed around the sub-accommodating hole 42b. However, the present invention is not limited to this. . Reference numeral 60 in FIG. 4 shows another example of the vapor deposition container used in the film forming apparatus of the present invention. The container main body 61 of the vapor deposition container 60 has an elongated shape, and the container main body 61 is provided horizontally inside the vacuum chamber 12 with its longitudinal direction being substantially horizontal.

容器本体６１の真空槽１２の天井側に向けられた面の幅方向略中央位置には、複数の副収容孔７２ｂが等間隔をあけて１個ずつ形成されており、副収容孔７２ｂの列の両側には、主収容孔７２ａが１個ずつ等間隔に並べられている。   A plurality of sub-accommodating holes 72b are formed at regular intervals at a substantially central position in the width direction of the surface of the container body 61 facing the ceiling of the vacuum chamber 12, and a row of sub-accommodating holes 72b is formed. The main housing holes 72a are arranged at equal intervals on both sides of the main housing holes 72a.

各主収容孔７２ａの開口と、各副収容孔７２ｂの開口は、蓋部材７７ａ、７７ｂで覆われており、第一の放出口７８ａ、７８ｂは主収容孔７２ａの開口の中央位置と、副主収容孔７２ｂの開口の中央位置にそれぞれ設けられているので、副材料の蒸気を通す第一の放出口７８ｂは容器本体３１の長手方向に沿って並べられ、主材料の蒸気を通す第一の放出口７８ａは、副材料の蒸気を通す第一の放出口ｂの両側に１個ずつ並べられたことになる。   The opening of each main housing hole 72a and the opening of each sub housing hole 72b are covered with lid members 77a and 77b, and the first discharge ports 78a and 78b are arranged at the center position of the opening of the main housing hole 72a, Since it is provided at the center position of the opening of the main accommodation hole 72b, the first discharge ports 78b through which the vapor of the secondary material passes are arranged along the longitudinal direction of the container body 31, and the first discharge through which the vapor of the main material passes. One discharge port 78a is arranged on each side of the first discharge port b through which the vapor of the secondary material passes.

図５の符号６７はこの蒸着容器６０と一緒に用いられる飛沫防止手段を示しており、飛沫防止手段８７は細長の容器で構成されている。この飛沫防止手段８７は第二の放出口８９を複数個有している。この飛沫防止手段８７の底板８８は長方形形状であって、第二の放出口８９は底板８８の中央位置で、その長手方向に沿って等間隔をあけて１個ずつ設けられている。   Reference numeral 67 in FIG. 5 indicates splash preventing means used together with the vapor deposition container 60, and the splash preventing means 87 is formed of an elongated container. The splash preventing means 87 has a plurality of second discharge ports 89. The bottom plate 88 of the splash preventing means 87 has a rectangular shape, and the second discharge ports 89 are provided one by one at equal intervals along the longitudinal direction at the center position of the bottom plate 88.

容器本体６１は飛沫防止手段８７の内部でその長手方向と略並行に配置されるので、第二の放出口８９は第一の放出口７８ａ、７８ｂの列と平行に並べられたことになる。このような蒸着源では、第二の放出口８９の数が１個の場合に比べて、長い領域に有機蒸着材料の蒸気を到達させることが可能であり、蒸着源と基板とを、第二の放出口８９が並べられた方向と直交する方向に相対的に移動させれば、より広い領域に有機蒸着材料の蒸気を到達させることができるので、大面積の基板に有機薄膜を形成することができる。   Since the container body 61 is disposed in the splash preventing means 87 substantially in parallel with the longitudinal direction thereof, the second discharge port 89 is arranged in parallel with the row of the first discharge ports 78a and 78b. In such a vapor deposition source, it is possible to make the vapor of the organic vapor deposition material reach a long region as compared with the case where the number of the second discharge ports 89 is one, and the vapor deposition source and the substrate are connected to each other. If the discharge port 89 is relatively moved in a direction orthogonal to the direction in which the discharge ports 89 are arranged, the vapor of the organic vapor deposition material can reach a wider area, so that an organic thin film is formed on a large-area substrate. Can do.

以上は、蒸着容器３０を冷却手段２１上に固定して成膜を行う場合について説明したが、本発明はこれに限定されるものではない。図６の符号６は本発明第三例の成膜装置を示しており、この成膜装置６では真空槽１２と、真空排気系１７と、熱媒体ガス導入系１８と、基板ホルダ１１と、冷却手段２１と、防着板２４は上述した第一例、第二例の成膜装置１、２と同じ構造になっており、蒸着容器６０と、飛沫防止手段８７は図４、５に示したものと同じ構造になっている。尚、図６は図４のＡ−Ａ線に相当する部分で成膜装置６を切断した場合の断面図である。   The case where the deposition container 30 is fixed on the cooling means 21 to perform film formation has been described above, but the present invention is not limited to this. Reference numeral 6 in FIG. 6 shows a film forming apparatus of the third example of the present invention. In this film forming apparatus 6, a vacuum chamber 12, a vacuum exhaust system 17, a heat medium gas introduction system 18, a substrate holder 11, The cooling means 21 and the deposition preventing plate 24 have the same structure as the film forming apparatuses 1 and 2 of the first and second examples described above, and the vapor deposition container 60 and the splash preventing means 87 are shown in FIGS. The structure is the same. 6 is a cross-sectional view when the film forming apparatus 6 is cut at a portion corresponding to the line AA in FIG.

この成膜装置６は更に、移動手段６７と、取り付け板６４とを有しており、この蒸着源５０では、蒸着容器６０と、飛沫防止手段８７はそれぞれ同じ取り付け板６４に取り付けられている。尚、ここでは、防着板２４も蒸着容器６０と同じ取り付け板６４に取り付けられている。移動手段６７は、真空槽１２外部に配置されたモータ６５と、一端がモータ６５に接続された昇降軸６６とを有している。   The film forming apparatus 6 further includes a moving unit 67 and a mounting plate 64. In the vapor deposition source 50, the vapor deposition container 60 and the splash preventing unit 87 are respectively mounted on the same mounting plate 64. Here, the deposition preventing plate 24 is also attached to the same mounting plate 64 as the vapor deposition vessel 60. The moving means 67 has a motor 65 disposed outside the vacuum chamber 12 and a lifting shaft 66 having one end connected to the motor 65.

昇降軸６６の他端は真空槽１２の底壁から真空槽１２内部に気密に挿入され、取り付け板６４に取り付けられており、モータ６５を起動し、昇降軸６６を上下に移動させると、蒸着容器６０と、飛沫防止手段８７と、防着板２４とが取り付け板６４と一緒に上下に移動するようになっている。   The other end of the lifting / lowering shaft 66 is airtightly inserted into the vacuum chamber 12 from the bottom wall of the vacuum chamber 12 and is attached to the mounting plate 64. When the motor 65 is activated and the lifting / lowering shaft 66 is moved up and down, vapor deposition is performed. The container 60, the splash preventing means 87, and the deposition preventing plate 24 are moved up and down together with the mounting plate 64.

冷却手段２１は真空槽１２の底壁に取り付けられており、昇降軸６６を最下方位置まで下降させると、蒸着容器６０と飛沫防止手段８７とが取り付け板６４を介して冷却手段２１に密着し、これとは逆に、昇降軸６６を最下方位置から上方に移動させると、蒸着容器６０と飛沫防止手段８７が冷却手段から離間するようになっている。   The cooling means 21 is attached to the bottom wall of the vacuum chamber 12, and when the elevating shaft 66 is lowered to the lowest position, the vapor deposition container 60 and the splash prevention means 87 are in close contact with the cooling means 21 via the attachment plate 64. On the contrary, when the elevating shaft 66 is moved upward from the lowest position, the vapor deposition container 60 and the splash prevention means 87 are separated from the cooling means.

従って、主材料７９ａと副材料７９ｂとを加熱し、蒸気を発生させる場合には、蒸着容器６０と飛沫防止手段８７とを冷却手段２１から離間させて、第一、第二の加熱手段２５、２６へ通電すれば、主材料７９ａと副材料７９ｂを効率良く加熱することが可能であり、主材料７９ａと副材料７９ｂとを冷却する場合には、蒸着容器６０と飛沫防止手段８７とを冷却手段２１へ密着させれば、主材料７９ａと副材料７９ｂが冷却される。   Therefore, when the main material 79a and the sub-material 79b are heated to generate steam, the vapor deposition container 60 and the splash prevention means 87 are separated from the cooling means 21, and the first and second heating means 25, 26, it is possible to efficiently heat the main material 79a and the submaterial 79b. When the main material 79a and the submaterial 79b are cooled, the vapor deposition container 60 and the splash prevention means 87 are cooled. If it adheres to the means 21, the main material 79a and the submaterial 79b will be cooled.

ここでは冷却手段２１は細長であって、主収容孔７２ａと副収容孔７２ｂが列設された方向に沿って配置されており、その長さは主収容孔７２ａの列と、副収容孔７２ｂの列よりは長くなっているので、蒸着容器６０を冷却手段２１に密着させれば、各主収容孔７２ａに収容された主材料７９ａと、各副収容孔７２ｂに収容された副材料７９ｂとを同程度に冷却されることになる。   Here, the cooling means 21 is elongated, and is arranged along the direction in which the main housing holes 72a and the sub housing holes 72b are arranged, and the length thereof is the row of the main housing holes 72a and the sub housing holes 72b. If the vapor deposition container 60 is brought into close contact with the cooling means 21, the main material 79a accommodated in each main accommodation hole 72a and the submaterial 79b accommodated in each sub accommodation hole 72b Will be cooled to the same extent.

この成膜装置６も、第一例、第二例の成膜装置１、２と同じ熱媒体ガス導入系１８を有しているので、主材料７９ａと副材料７９ｂとを冷却するときに、熱媒体ガスの導入によって真空槽１２内部の圧力を成膜のときよりも高くし、第一、第二の放出口７８ａ、７８ｂ、７９付近の温度が、主収容孔７２ａに残る主材料７９ａと、副収容孔７２ｂに残る副材料７９ｂよりも先に蒸気発生温度以下にならないようにすれば、第一、第二の放出口７８ａ、７８ｂ、７９内部に有機蒸着材料が析出することなく、蒸気の発生を停止させることができる。   Since this film forming apparatus 6 also has the same heat medium gas introduction system 18 as the film forming apparatuses 1 and 2 of the first example and the second example, when cooling the main material 79a and the sub material 79b, By introducing the heat medium gas, the pressure inside the vacuum chamber 12 is made higher than that at the time of film formation, and the temperature in the vicinity of the first and second discharge ports 78a, 78b, 79 is the main material 79a remaining in the main accommodation hole 72a. As long as the temperature is not lower than the vapor generation temperature prior to the sub-material 79b remaining in the sub-accommodating hole 72b, the organic vapor deposition material does not precipitate inside the first and second discharge ports 78a, 78b, 79, Can be stopped.

以上は、飛沫防止手段２７、８７を設け、第一の放出口３８から放出された蒸気を一端飛沫防止手段２７の内部に一旦充満させる場合について説明したが、本発明はこれに限定されるものではなく、飛沫防止手段２７を設けずに、第一の放出口３８から放出される蒸気を基板に直接到達させることもできる。   Although the above has described the case where the splash preventing means 27 and 87 are provided and the vapor discharged from the first discharge port 38 is once filled in the inside of the splash preventing means 27, the present invention is limited to this. Instead, the vapor discharged from the first discharge port 38 can directly reach the substrate without providing the splash preventing means 27.

また、収容孔３２に蓋部材を設けず、収容孔３２内部で発生する蒸気を飛沫防止手段２７の内部に直接放出し、第二の放出口３９から真空槽１２内部に蒸気を放出することもできる。   Further, without providing a lid member in the accommodation hole 32, the steam generated inside the accommodation hole 32 is directly discharged into the splash preventing means 27, and the steam is discharged into the vacuum chamber 12 from the second discharge port 39. it can.

以上は、第一の加熱手段２５を容器本体の外周側壁に巻き回す場合について説明したが、本発明はこれに限定されるものではなく、例えば、第一の加熱手段を容器本体の内部に埋設し、該第一の加熱手段を発熱させるとで、容器本体を加熱することもできる。   The above has described the case where the first heating means 25 is wound around the outer peripheral side wall of the container body. However, the present invention is not limited to this. For example, the first heating means is embedded in the container body. The container body can also be heated by generating heat from the first heating means.

また、飛沫防止手段２７の場合も同様に、飛沫防止手段２７内部に第二の加熱手段し、第二の加熱手段を発熱させることで、飛沫防止手段２７を加熱することができる。   Similarly, in the case of the splash preventing means 27, the splash preventing means 27 can be heated by providing the second heating means inside the splash preventing means 27 and causing the second heating means to generate heat.

蒸着容器３０を真空槽１２から搬出する場合には、第一の加熱手段２５を蒸着容器３０から取り外してから搬出してもよいし、第一の加熱手段２５を蒸着容器３０に取り付けたまま、蒸着容器３０と一緒に真空槽１２外部に搬出してもよい。   When carrying out the vapor deposition container 30 from the vacuum chamber 12, the first heating means 25 may be removed from the vapor deposition container 30 and then carried out, or while the first heating means 25 is attached to the vapor deposition container 30, You may carry out with the vapor deposition container 30 to the vacuum chamber 12 exterior.

第一、第二の放出口３８、３９の平面形状も特に限定されるものではない。特に、収容孔７２ａ、７２ｂが列設され、飛沫防止手段８７が細長にされた場合には、第二の放出口として細長のスリットを形成し、該細長のスリットを収容孔７２ａ、７２ｂが列設された方向に沿って配置してもよい。   The planar shape of the first and second discharge ports 38 and 39 is not particularly limited. In particular, when the accommodation holes 72a and 72b are arranged in a row and the splash preventing means 87 is elongated, an elongated slit is formed as the second discharge port, and the accommodation holes 72a and 72b are arranged in a row. You may arrange | position along the established direction.

容器本体３１、６１は構成する熱伝導材料もグラファイトに限定されるものではなく、熱伝導性の高い材料であれば、酸化アルミニウム、窒化アルミニウム、窒化ケイ素、炭化ケイ素、ジルコニア等種々の材料を用いることができる。
内筒容器を構成する金属はステンレスに限定されず、耐薬品性や耐熱性の高いものであれば、例えばＴａ（タンタル）や種々の合金を用いることもできる。 The heat conductive material constituting the container bodies 31 and 61 is not limited to graphite, and various materials such as aluminum oxide, aluminum nitride, silicon nitride, silicon carbide, and zirconia are used as long as the materials have high heat conductivity. be able to.
The metal constituting the inner cylinder container is not limited to stainless steel, and for example, Ta (tantalum) and various alloys can be used as long as they have high chemical resistance and heat resistance.

熱媒体ガスは窒素ガスに限定されるものではなく、有機蒸着材料に対して反応性の低いものであれば、ヘリウムガス、アルゴンガス、キセノンガス等の種々のガスを用いることができる。これらのガスを単独で用いてもよいし、２種類以上を混合したものを用いてもよい。   The heat medium gas is not limited to nitrogen gas, and various gases such as helium gas, argon gas, and xenon gas can be used as long as they have low reactivity with the organic vapor deposition material. These gases may be used alone, or a mixture of two or more types may be used.

本発明の蒸着装置に用いられる有機蒸着材料は特に限定されるものではない。例えば、発光性の有機材料を主材料として用い、副材料として有機色素を用いれば、有機ＥＬ素子の発光層である有機薄膜を形成することができる。   The organic vapor deposition material used for the vapor deposition apparatus of the present invention is not particularly limited. For example, when a light-emitting organic material is used as a main material and an organic dye is used as a sub-material, an organic thin film that is a light-emitting layer of an organic EL element can be formed.

蒸着容器６０を冷却手段２１と離間又は接触させる場合には、冷却手段を移動手段に取り付け、蒸着容器６０を静止させた状態で冷却手段を移動させてもよいし、冷却手段２１と蒸着容器６０の両方を移動手段に取り付け、冷却手段２１と蒸着容器６０の両方を移動させてもよい。要するに、蒸着容器と冷却手段とが相対的に移動し、互いに接触又は離間すればよい。   When the vapor deposition container 60 is separated or brought into contact with the cooling means 21, the cooling means may be attached to the moving means, and the cooling means may be moved while the vapor deposition container 60 is stationary, or the cooling means 21 and the vapor deposition container 60 may be moved. Both may be attached to the moving means, and both the cooling means 21 and the vapor deposition container 60 may be moved. In short, the vapor deposition container and the cooling means may be moved relative to each other and contacted or separated from each other.

以上は、蒸着容器３０を真空槽１２外部に取り出すために有機蒸着材料を冷却する場合について説明したが本発明はこれに限定されるものではない。基板１３を交換するときに有機蒸着材料を冷却し、蒸気の発生量を抑えれば、有機蒸着材料が無駄に消費されることがない。この場合も、有機蒸着材料を冷却するときに、熱媒体ガスの導入によって、真空槽１２内部の圧力を成膜時よりも高くすれば、第一、第二の放出口の内壁に有機蒸着材料が析出することを防止できる。   The case where the organic vapor deposition material is cooled in order to take out the vapor deposition container 30 to the outside of the vacuum chamber 12 has been described above, but the present invention is not limited to this. If the organic vapor deposition material is cooled when the substrate 13 is replaced to reduce the amount of vapor generated, the organic vapor deposition material is not wasted. Also in this case, when the organic vapor deposition material is cooled, if the pressure inside the vacuum chamber 12 is made higher than that during film formation by introducing the heat medium gas, the organic vapor deposition material is formed on the inner walls of the first and second discharge ports. Can be prevented from precipitating.

有機蒸着材料の冷却は、熱媒体ガスの導入を開始する前に、第一、第二の加熱手段２５、２６への通電を停止して行ってもよいし、熱媒体ガスを真空槽１２内部に導入し、真空槽１２内部の圧力が所定圧力（例えば２Ｔｏｒｒ以上４Ｔｏｒｒ以下の圧力範囲）に達してから第一、第二の加熱手段２５、２６への通電を停止してもよい。
また、冷却手段と蒸着容器とを相対的に移動させる場合には、熱媒体ガスの導入は、蒸着容器が接触する前に行ってもよいし、蒸着容器が接触した後に行っても良い。 Cooling of the organic vapor deposition material may be performed by stopping energization of the first and second heating means 25 and 26 before the introduction of the heat medium gas is started. And the energization of the first and second heating means 25 and 26 may be stopped after the pressure inside the vacuum chamber 12 reaches a predetermined pressure (for example, a pressure range of 2 Torr to 4 Torr).
When the cooling means and the vapor deposition container are moved relatively, the introduction of the heat medium gas may be performed before the vapor deposition container contacts or after the vapor deposition container contacts.

本発明第一例の成膜装置を説明する断面図Sectional drawing explaining the film-forming apparatus of 1st example of this invention 本発明第二例の成膜装置を説明する断面図Sectional drawing explaining the film-forming apparatus of 2nd example of this invention 本発明第二例の成膜装置に用いられる蒸着容器を説明する平面図The top view explaining the vapor deposition container used for the film-forming apparatus of 2nd example of this invention 本発明第三例の成膜装置に用いられる蒸着容器を説明する平面図The top view explaining the vapor deposition container used for the film-forming apparatus of the third example of the present invention 本発明第三例の成膜装置に用いられる飛沫防止手段を説明する平面図The top view explaining the splash prevention means used for the film-forming apparatus of the third example of the present invention 取り付け板を冷却手段から離間させた状態の成膜装置を説明する断面図Sectional drawing explaining the film-forming apparatus of the state which separated the attachment plate from the cooling means 取り付け板を冷却手段に密着させた状態の成膜装置を説明する断面図Sectional drawing explaining the film-forming apparatus of the state which attached the attachment plate to the cooling means 従来技術の成膜装置を説明する断面図Sectional drawing explaining the film-forming apparatus of a prior art

符号の説明Explanation of symbols

１、２、６……成膜装置 １２……真空槽 １３……基板 １７……真空排気系 １８……熱媒体ガス導入系 １９……有機蒸着材料 ２１……冷却手段 ２５……第一の加熱手段 ２６……第二の加熱手段 ２７、８７……飛沫防止手段 ２０、４０、５０……蒸着源 ３０……蒸着容器 ３１、６１……容器本体 ３７、４７ａ、４７ｂ、７７ａ、７７ｂ……蓋部材 ３８、４８ａ、４８ｂ、７８ａ、７８ｂ……第一の放出口 ３９、８９……第二の放出口   1, 2, 6 ... Film forming apparatus 12 ... Vacuum chamber 13 ... Substrate 17 ... Vacuum exhaust system 18 ... Heating medium gas introduction system 19 ... Organic vapor deposition material 21 ... Cooling means 25 ... First Heating means 26 ... second heating means 27, 87 ... splash prevention means 20, 40, 50 ... vapor deposition source 30 ... vapor deposition container 31, 61 ... container body 37, 47a, 47b, 77a, 77b ... Lid member 38, 48a, 48b, 78a, 78b ...... first discharge port 39, 89 ... second discharge port

Claims (4)

真空槽と、前記真空槽内部に配置された蒸着源とを有し、
前記蒸着源は、蒸着容器と、加熱手段と、冷却手段とを有し、
前記蒸着容器は熱伝導性の容器本体と、前記容器本体に設けられた収容孔と、前記収容孔の開口を覆う蓋部材と、前記蓋部材を貫通する第一の放出口とを有し、
前記加熱手段は前記容器本体の周囲に配置され、前記収容孔に有機蒸着材料を収容した状態で前記加熱手段を動作させると、前記有機蒸着材料が昇温して蒸気が発生し、前記蒸気が前記第一の放出口を通って前記蒸着容器の外部に放出されるように構成され、
前記冷却手段は前記容器本体の一面に配置され、前記容器本体を冷却するように構成された成膜装置であって、
前記真空槽に接続された熱媒体ガス導入系を有し、前記熱媒体ガス導入系から前記真空槽内部に熱媒体ガスが導入されると、前記熱媒体ガスが前記第一の放出口を通って前記収容孔内部に導入されるように構成され、
前記収容孔は、主材料を収容する主収容孔と、副材料を収容する副収容孔とを有し、
前記主収容孔の数と、前記副収容孔の数はそれぞれ複数個であって、
前記副収容孔は一方向に並べられ、
前記主収容孔は前記副収容孔が並べられた列の両側に配置された成膜装置。 A vacuum chamber, and a vapor deposition source disposed inside the vacuum chamber,
The vapor deposition source includes a vapor deposition container, a heating unit, and a cooling unit,
The vapor deposition container has a thermally conductive container body, a housing hole provided in the container body, a lid member that covers the opening of the housing hole, and a first discharge port that penetrates the lid member,
The heating means is disposed around the container body, and when the heating means is operated in a state where the organic vapor deposition material is accommodated in the accommodation hole, the organic vapor deposition material is heated to generate vapor, and the vapor is It is configured to be discharged to the outside of the vapor deposition container through the first discharge port,
The cooling means is a film forming apparatus arranged on one surface of the container body and configured to cool the container body,
A heat medium gas introduction system connected to the vacuum chamber; and when the heat medium gas is introduced into the vacuum chamber from the heat medium gas introduction system, the heat medium gas passes through the first discharge port. Configured to be introduced into the receiving hole ,
The housing hole has a main housing hole for housing a main material and a sub housing hole for housing a sub material,
The number of the main housing holes and the number of the sub housing holes are each plural,
The sub-accommodating holes are arranged in one direction,
The main housing hole is a film forming apparatus arranged on both sides of a row in which the sub housing holes are arranged . 真空槽と、前記真空槽内部に配置された蒸着源とを有し、
前記蒸着源は、蒸着容器と、加熱手段と、冷却手段と、飛沫防止手段とを有し、
前記蒸着容器は前記飛沫防止手段で覆われ、
前記加熱手段は前記容器本体の周囲に配置され、前記収容孔に有機蒸着材料を収容した状態で前記加熱手段を動作させると、前記有機蒸着材料が昇温して蒸気が発生し、前記蒸気が前記飛沫防止手段に覆われた空間に放出された後、前記飛沫防止手段に設けられた第二の放出口を通って前記真空槽内部に放出されるように構成され、
前記冷却手段は前記容器本体の一面に配置され、前記容器本体を冷却するように構成された成膜装置であって、
前記真空槽に接続された熱媒体ガス導入系を有し、前記熱媒体ガス導入系から前記真空槽内部に熱媒体ガスが導入されると、前記熱媒体ガスが前記第二の放出口を通って前記飛沫防止手段で覆われた空間に導入されるように構成された成膜装置。 A vacuum chamber, and a vapor deposition source disposed inside the vacuum chamber,
The vapor deposition source includes a vapor deposition container, a heating unit, a cooling unit, and a splash preventing unit,
The vapor deposition container is covered with the splash preventing means,
The heating means is disposed around the container body, and when the heating means is operated in a state where the organic vapor deposition material is accommodated in the accommodation hole, the organic vapor deposition material is heated to generate vapor, and the vapor is After being released into the space covered by the splash preventing means, it is configured to be released into the vacuum chamber through a second discharge port provided in the splash preventing means,
The cooling means is a film forming apparatus arranged on one surface of the container body and configured to cool the container body,
A heat medium gas introduction system connected to the vacuum chamber, and when the heat medium gas is introduced into the vacuum chamber from the heat medium gas introduction system, the heat medium gas passes through the second discharge port. A film forming apparatus configured to be introduced into the space covered with the splash preventing means. 前記収容孔は、主材料を収容する主収容孔と、副材料を収容する副収容孔とを有し、
前記主収容孔の数は、前記副収容孔よりも多い複数個であり、
前記主収容孔は、前記副収容孔の周囲に配置された請求項１又は請求項２のいずれか１項記載の成膜装置。 The housing hole has a main housing hole for housing a main material and a sub housing hole for housing a sub material,
The number of the main accommodation holes is a plurality more than the sub accommodation holes,
The film forming apparatus according to claim 1, wherein the main accommodation hole is disposed around the sub accommodation hole. 前記容器本体と前記冷却手段とを相対的に移動させる移動手段を有し、前記移動手段を動作させると前記容器本体と前記冷却手段とが接触又は離間するようにされた請求項１乃至請求項３のいずれか１項記載の成膜装置。 The container body and has a moving means for relatively moving the said cooling means, said moving the container body and the cooling means and the claims 1 to is brought into contact or separated from the operating means deposition apparatus according to any one of 3.
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KR101181680B1 (en) * 2007-11-05 2012-09-19 가부시키가이샤 알박 Vacuum-evaporation source, and organic el element manufacturing apparatus
JP5281148B2 (en) * 2009-04-03 2013-09-04 東京エレクトロン株式会社 Vapor deposition head and film forming apparatus
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US20150060263A1 (en) * 2012-03-29 2015-03-05 Toray Industries, Inc. Vacuum film deposition device and vacuum film deposition method
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