JP4332047B2 - Electronic equipment - Google Patents

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JP4332047B2
JP4332047B2 JP2004050882A JP2004050882A JP4332047B2 JP 4332047 B2 JP4332047 B2 JP 4332047B2 JP 2004050882 A JP2004050882 A JP 2004050882A JP 2004050882 A JP2004050882 A JP 2004050882A JP 4332047 B2 JP4332047 B2 JP 4332047B2
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solder
layer
nickel
metal layer
lid
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JP2005243873A (en
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定功 吉田
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Kyocera Corp
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Description

本発明の蓋体およびこれを用いた電子装置は、半導体素子や圧電振動子等の電子部品を気密に収納するための電子部品収納用パッケージに使用される蓋体およびこれを用いた電子装置に関し、特に低融点合金から成る半田を用いて電子部品収納用パッケージの封止を行なうための蓋体およびこれを用いた電子装置に関する。   BACKGROUND OF THE INVENTION 1. Field of the Invention The lid of the present invention and an electronic device using the same relate to a lid used for an electronic component storage package for hermetically storing electronic components such as semiconductor elements and piezoelectric vibrators, and an electronic device using the same. More particularly, the present invention relates to a lid for sealing an electronic component storage package using solder made of a low melting point alloy and an electronic device using the lid.

従来、半導体素子等の電子部品を収容するための電子部品収納用パッケージは、例えば酸化アルミニウム質焼結体等の電気絶縁材料から成り、その上面の中央付近に電子部品を収容するための凹部およびその周辺から下面にかけて導出したタングステンやモリブデン等の高融点金属から成る複数個のメタライズ配線層を有し、上面の外周部に蓋体との接合用のメタライズ金属層が被着された基体を具備している。そして、基体の凹部底面に半導体素子等の電子部品を接着剤等を介して接着するとともに、電子部品の各電極をボンディングワイヤ等を介してメタライズ配線層に接続し、しかる後、基体のメタライズ金属層に、蓋体を接合材で接合させ、基体と蓋体とから成る気密な容器を構成することによって最終製品としての電子装置としていた。   Conventionally, an electronic component storage package for storing an electronic component such as a semiconductor element is made of an electrically insulating material such as an aluminum oxide sintered body, and has a concave portion for storing the electronic component near the center of the upper surface thereof. A plurality of metallized wiring layers made of a refractory metal such as tungsten or molybdenum derived from the periphery to the lower surface are provided, and the base has a metallized metal layer for bonding to the lid attached to the outer periphery of the upper surface. is doing. Then, an electronic component such as a semiconductor element is bonded to the bottom surface of the concave portion of the substrate through an adhesive or the like, and each electrode of the electronic component is connected to the metallized wiring layer through a bonding wire or the like. The lid was bonded to the layer with a bonding material, and an airtight container composed of the base and the lid was formed, thereby forming an electronic device as a final product.

なお、このような従来の電子装置においては、基体と蓋体とを接合する接合材として、金を８０質量％含む金−錫合金もしくは、鉛を主成分とする半田が使用されていた。   In such a conventional electronic device, a gold-tin alloy containing 80% by mass of gold or solder containing lead as a main component is used as a bonding material for bonding the base and the lid.

しかしながら、金を８０質量％含む金−錫合金を使った場合は、製品の価格が高くなるため、使用される製品が限られるという問題点がある。また、鉛を主成分とする半田は、半田に含有される鉛が環境汚染物質に指定されており、鉛を含有する半田を使用した電子装置が屋外に廃棄もしくは放置され風雨に曝された場合、環境中に鉛が溶け出し環境を汚染する危険性がある。このため、近年、地球環境保護運動の高まりの中で鉛を含有しない接合材が要求されるようになってきた。   However, when a gold-tin alloy containing 80% by mass of gold is used, there is a problem that the product used is limited because the price of the product increases. In addition, the solder containing lead as the main component is that the lead contained in the solder is designated as an environmental pollutant, and the electronic device using the lead-containing solder is disposed or left outdoors and exposed to wind and rain. There is a danger that lead will dissolve in the environment and pollute the environment. For this reason, in recent years, there has been a demand for a bonding material containing no lead in the growing global environmental protection movement.

そこで、人体に対して有害である鉛を用いない各種接合材が開発され提案されており、このような接合材として、例えば錫やビスマス−銀、亜鉛−アルミニウム等を主成分とする各種はんだが採用されてきている。   Accordingly, various joining materials that do not use lead, which is harmful to the human body, have been developed and proposed. As such joining materials, for example, various solders mainly composed of tin, bismuth-silver, zinc-aluminum, and the like are used. Has been adopted.

なお、一般的に鉛を含有しない半田と言っても、不可避不純物としての鉛を含有していることは、周知の事実である。つまり、半田の原料の錫の中に不純物として鉛が０．０１〜０．１質量％含まれており、ゼロにはできないため、鉛を意図的に加えておらず、鉛の含有率が０．１質量％未満である半田については、鉛を含んでいない半田と表現されるのが一般的であり、上記鉛を含有しない半田についても、０．１％未満の不可避不純物としての鉛は含まれているものである。
特開２０００−３０７２２８号公報 Note that it is a well-known fact that even if solder is generally not containing lead, it contains lead as an inevitable impurity. In other words, tin is contained as an impurity in the solder raw material of 0.01 to 0.1% by mass and cannot be reduced to zero. Therefore, lead is not intentionally added, and the lead content is 0. Solder that is less than 1% by mass is generally expressed as solder that does not contain lead, and solder that does not contain lead also contains lead as an inevitable impurity of less than 0.1%. It is what has been.
JP 2000-307228 A

しかしながら錫や銀，亜鉛を含有した合金から成る半田は、温度が−５５〜１２５℃の温度サイクル条件下での耐熱疲労性には優れた信頼性を示すものの、これらの半田の融点はいずれも２２５℃以下であるために、この半田を基体と蓋体とを気密に接合する接合材として使用した場合、電子装置を外部電気回路等に実装する際に２５０〜２６０℃の熱履歴が接合材に加わるため、接合材自体が溶融し、電子装置の気密性が破れるという問題点を有していた。   However, solders made of alloys containing tin, silver, and zinc show excellent reliability in heat fatigue resistance under temperature cycle conditions of −55 to 125 ° C., but the melting points of these solders are all When this solder is used as a bonding material for airtightly bonding the base body and the lid body because the temperature is 225 ° C. or lower, a thermal history of 250 to 260 ° C. is generated when the electronic device is mounted on an external electric circuit or the like. Therefore, the bonding material itself melts and the airtightness of the electronic device is broken.

また、ビスマス−銀合金を主成分とする半田は、−５５〜１２５℃の温度サイクル条件下での耐熱疲労特性に劣り、気密信頼性に欠けるため、電子装置の気密接合用に用いるには不適当であるという問題点を有していた。   In addition, solder containing bismuth-silver alloy as a main component is inferior in heat-resistant fatigue characteristics under a temperature cycle condition of −55 to 125 ° C. and lacks hermetic reliability, so that it is not suitable for use in hermetic bonding of electronic devices. It had the problem of being appropriate.

さらに、亜鉛−アルミニウム合金を主成分とする半田は、空気中に放置した場合に腐食が進行しやすく、長期の気密信頼性に欠けるので、電子装置の気密接合用には、これもまた不適当であるという問題点があった。   Furthermore, since solder containing zinc-aluminum alloy as a main component tends to corrode when left in the air and lacks long-term airtight reliability, it is also inappropriate for airtight joining of electronic devices. There was a problem that.

従って、本発明はこのような従来の問題点に鑑み完成されたもので、その目的は、電子装置を外部電気回路等に実装する際に２５０〜２６０℃の熱履歴が加わっても電子装置の気密性が保持でき、さらに、鉛を含有しないため地球環境を汚染しない電子部品収納用パッケージ用の蓋体および電子装置を提供することにある。   Accordingly, the present invention has been completed in view of such conventional problems, and the object of the present invention is to provide an electronic device with a thermal history of 250 to 260 ° C. when the electronic device is mounted on an external electric circuit or the like. An object of the present invention is to provide a lid for an electronic component storage package and an electronic device that can maintain airtightness and do not contaminate the global environment because it does not contain lead.

本発明の電子装置は、上面に形成された凹部の底面に電子部品の搭載部が形成された基体と、該基体の上面の前記凹部の周囲に全周にわたって形成されたメタライズ層と、該メタライズ層と蓋体の下面の外周部とを接合する、錫を主成分としニッケルを含有するとともに内周側よりも外周側がニッケルの含有率が低い半田層とを具備しており、前記蓋体が、板状体の下面の外周部に全周にわたって形成されたニッケル−コバルト合金からなる金属層と、該金属層の表面に全周にわたって形成された錫を主成分とする半田層とを具備していることを特徴とする。 An electronic device according to the present invention includes a base on which a mounting portion for an electronic component is formed on the bottom surface of a recess formed on the top surface, a metallization layer formed on the entire periphery of the recess on the top surface of the base, and the metallization. And a solder layer containing nickel as a main component and containing nickel and having a lower nickel content on the outer peripheral side than the inner peripheral side, joining the layer and the outer peripheral portion of the lower surface of the lid, A metal layer made of a nickel-cobalt alloy formed on the entire periphery of the lower surface of the plate-like body, and a solder layer mainly composed of tin formed on the entire surface of the metal layer. It is characterized by.

本発明における蓋体は、板状体の下面の外周部に全周にわたって形成されたニッケル−コバルト合金からなる金属層と、この金属層の表面に全周にわたって形成された錫を主成分とする半田層とを具備していることにより、電子部品を実装した電子部品収納用パッケージのメタライズ層と、蓋体の半田層とを加熱接合した場合に、半田層が溶融後、接合のピーク温度まで上昇する間、半田中に金属層が拡散する現象と、半田層が濡れ広がる現象が同時に進むこととなる。このとき、半田層は温度上昇に伴う電子部品収納用パッケージの内部のガスの熱膨張による内圧の上昇によって蓋体の外周よりも外側にもれ出るように押し出されるが、金属層が半田中に拡散した部分は半田の流動性が悪くなるため、蓋体の外周よりも外側に押し出される半田は、常にニッケルの含有率の低い半田となる。よって、半田の外周側、特にフィレットが形成される部分では半田中のニッケル含有率を低く維持することができ、錫が主成分である半田の持っている高い温度サイクル信頼性を良好に保持することができる。 Lid of the present invention, the lower surface of the nickel has been formed over the entire circumference on the outer periphery of the plate - as a main component and a metal layer made of cobalt alloy, tin formed over the entire circumference on the surface of the metal layer When the metallized layer of the electronic component storage package on which the electronic component is mounted and the solder layer of the lid are heat-bonded by the solder layer, the solder layer melts and reaches the peak bonding temperature. While rising, a phenomenon in which the metal layer diffuses into the solder and a phenomenon in which the solder layer wets and spreads simultaneously proceed. At this time, the solder layer is pushed out so as to protrude outward from the outer periphery of the lid due to the increase in internal pressure due to the thermal expansion of the gas inside the electronic component storage package accompanying the temperature rise, but the metal layer is in the solder. Since the diffused portion has poor solder fluidity, the solder pushed outside the outer periphery of the lid is always a solder with a low nickel content. Therefore, the nickel content in the solder can be kept low on the outer peripheral side of the solder, particularly in the part where the fillet is formed, and the high temperature cycle reliability possessed by the solder whose main component is tin is satisfactorily maintained. be able to.

また、内周側の半田はニッケルが長時間拡散することでニッケルの含有率が高くなり、半田中の錫と合金化することで半田の融点が上昇することから耐熱性が向上し、電子装置を外部電気回路等に実装する際に２５０〜２６０℃の熱履歴が加わっても電子装置の気密性を良好に保持できる。   Also, the solder on the inner peripheral side has a high nickel content due to the diffusion of nickel for a long time, and the melting point of the solder is increased by alloying with the tin in the solder, so the heat resistance is improved and the electronic device Even when a thermal history of 250 to 260 ° C. is applied when mounting the semiconductor device on an external electric circuit or the like, the airtightness of the electronic device can be maintained well.

本発明の電子装置は、上面に形成された凹部の底面に電子部品の搭載部が形成された基体と、基体の上面の凹部の周囲に全周にわたって形成されたメタライズ層と、メタライズ層と蓋体の下面の外周部とを接合する、錫を主成分としニッケルを含有するとともに内周側よりも外周側がニッケルの含有率が低い半田層とを具備しており、蓋体が上記本発明の蓋体であることにより、半田中のニッケル含有率を、半田の外周側で低く、内周側では高くすることができ、内周側の半田で電子装置を外部電気回路等に実装する際に２５０〜２６０℃の熱履歴が加わっても電子装置の気密性を良好に保持できる。また、外周側の半田で錫主成分の半田の持っている高い温度サイクル信頼性を良好に保持することができる。   An electronic device according to the present invention includes a base on which a mounting portion for an electronic component is formed on the bottom surface of a recess formed on the top surface, a metallization layer formed on the entire periphery of the recess on the top surface of the base, a metallization layer, and a lid A solder layer containing tin as a main component and containing nickel and having a lower nickel content than the inner peripheral side, and the lid body of the present invention. By being a lid, the nickel content in the solder can be low on the outer peripheral side of the solder and high on the inner peripheral side, and when mounting an electronic device on an external electric circuit or the like with the inner peripheral side solder Even if a heat history of 250 to 260 ° C. is applied, the airtightness of the electronic device can be maintained well. Further, the high temperature cycle reliability possessed by the solder composed mainly of tin can be satisfactorily maintained by the solder on the outer peripheral side.

次に、本発明における蓋体を添付の図面に基づいて詳細に説明する。 Next, the lid according to the present invention will be described in detail with reference to the accompanying drawings.

図１は、本発明における蓋体の実施の形態の一例を示す断面図であり、１は板状体、２は板状体１下面の外周部に全周にわたって形成されたニッケル−コバルト合金からなる金属層、３は金属層２の表面に全周にわたって形成された錫を主成分とする半田層である。 FIG. 1 is a cross-sectional view showing an example of an embodiment of a lid body according to the present invention. 1 is a plate-like body, 2 is a nickel-cobalt alloy formed on the outer circumference of the lower surface of the plate-like body 1 over the entire circumference. The metal layer 3 is a solder layer mainly composed of tin formed on the entire surface of the metal layer 2.

板状体１は、例えば４２アロイのような鉄−ニッケル合金や、鉄−ニッケル−コバルト合金等の金属からなる。また、板状体１の下面の外周部の全周にわたってニッケル−コバルト合金からなる金属層２が形成されている。このような板状体１は、例えば、以下のようにして作製される。   The plate-like body 1 is made of a metal such as an iron-nickel alloy such as 42 alloy or an iron-nickel-cobalt alloy. A metal layer 2 made of a nickel-cobalt alloy is formed over the entire circumference of the outer peripheral portion of the lower surface of the plate-like body 1. Such a plate-like body 1 is produced as follows, for example.

まず、金属製の母材を圧延等で必要な厚みまで薄板加工し、適宜な寸法の板材とする。そして、板材の所望の部位にのみめっきが形成されるようにするため、めっきが不要な部分にめっきレジストを従来周知のスクリーン印刷法等で印刷し、乾燥した後、これを電解ニッケル−コバルトめっきを行なうことにより、ニッケル−コバルトめっきからなる金属層２を形成する。なお、この電解ニッケル−コバルトめっきは、ニッケル溶液に適量のコバルトイオンを添加しためっき溶液を使用することで形成することができる。そして、電解ニッケル−コバルトめっきを行なった後に、レジストを剥離して、板状体１に対応した形状を有する打ち抜き金型等で、下面の外周部にめっきが形成された状態になるように位置合わせを行なって打ち抜くことによって下面の外周部に金属層２を有する板状体１が製作される。   First, a metal base material is thinned to a necessary thickness by rolling or the like to obtain a plate material having an appropriate size. Then, in order to form a plating only on a desired portion of the plate material, a plating resist is printed on a portion where plating is not required by a conventionally known screen printing method or the like, and after drying, this is subjected to electrolytic nickel-cobalt plating. To form a metal layer 2 made of nickel-cobalt plating. The electrolytic nickel-cobalt plating can be formed by using a plating solution obtained by adding an appropriate amount of cobalt ions to a nickel solution. Then, after performing electrolytic nickel-cobalt plating, the resist is peeled off so that the outer peripheral portion of the lower surface is plated with a punching die having a shape corresponding to the plate-like body 1. The plate-like body 1 having the metal layer 2 on the outer peripheral portion of the lower surface is manufactured by matching and punching.

なお、ニッケル−コバルト合金からなる金属層２は、その作製方法等により金属層２に他の成分等が含まれる場合があるが、ニッケルとコバルトの合計の質量が金属層２の９０質量％以上を占めている場合は、本発明の効果を有するものであり、実質的にニッケル−コバルト合金とみなすことができる。   In addition, although the metal layer 2 which consists of nickel-cobalt alloy may contain other components etc. in the metal layer 2 by the preparation method etc., the total mass of nickel and cobalt is 90 mass% or more of the metal layer 2 , It has the effect of the present invention, and can be substantially regarded as a nickel-cobalt alloy.

また、金属層２におけるニッケル−コバルト合金のニッケルとコバルトの比率は、コバルトがニッケルに対して２〜１０質量％含まれている場合に耐熱性の向上に最も効果がある。コバルトがニッケルに対して２質量％未満しか含まれない場合は、半田層３へのニッケルの拡散が遅くなるため、耐熱性を向上させるための接合条件として、加熱溶融時間を延長させることになり生産性が低下する傾向があり、コバルトがニッケルに対して１０質量％を超えて含まれる場合は、ニッケルの拡散が早くなるため、接合の作業条件範囲が狭くなり、作業性が悪くなる傾向がある。   Moreover, the ratio of nickel and cobalt of the nickel-cobalt alloy in the metal layer 2 is most effective in improving heat resistance when cobalt is contained in an amount of 2 to 10% by mass with respect to nickel. When cobalt is contained in an amount of less than 2% by mass with respect to nickel, the diffusion of nickel into the solder layer 3 is slowed, so that the heating and melting time is extended as a joining condition for improving heat resistance. There is a tendency for productivity to decrease, and when cobalt is contained in excess of 10% by mass with respect to nickel, the diffusion of nickel is accelerated, so that the working condition range for joining is narrowed and workability tends to be poor. is there.

また、金属層２の表面には、全周にわたって錫を主成分とする半田層３が形成されている。半田層３は錫−銀合金や、錫−銀−銅合金等の錫を主成分とする半田からなり、例えば、錫−銀共晶半田（錫９６．５質量％、および銀３．５質量％の組成である)であれば、例えば以下のようにして作製する。   A solder layer 3 mainly composed of tin is formed on the entire surface of the metal layer 2. The solder layer 3 is made of a solder mainly composed of tin, such as a tin-silver alloy or a tin-silver-copper alloy. For example, a tin-silver eutectic solder (96.5% by mass of tin and 3.5% by mass of silver). For example, it is manufactured as follows.

まず、るつぼで、錫と銀を９６．５：３．５の質量比率で配合し加熱して溶融半田とする。次に溶融した半田を窒素雰囲気中に霧状にスプレーすることにより、酸化のない微小な半田粒子を作製する。これを、適宜な寸法のメッシュを通過させることで、一定の粒径毎にそろえる。そして用途に応じて、適切な粒径の半田粒子を、松脂やチクソ剤、溶剤等を混ぜたフラックスと混合することでクリーム半田を作製する。さらに、このクリーム半田を、板状体１の金属層２の表面に全周にわたってスクリーン印刷法等で印刷し、その後窒素中で加熱しリフローし、最後に、フラックスを溶剤等で洗浄することによって、半田層３を形成する。   First, in a crucible, tin and silver are mixed at a mass ratio of 96.5: 3.5 and heated to obtain molten solder. Next, the melted solder is sprayed in the form of a mist in a nitrogen atmosphere to produce fine solder particles without oxidation. By passing this through a mesh of an appropriate size, it is aligned for every fixed particle size. And according to a use, a solder paste of an appropriate particle diameter is mixed with the flux which mixed pine resin, a thixotropic agent, a solvent, etc., and cream solder is produced. Further, this cream solder is printed on the surface of the metal layer 2 of the plate-like body 1 by the screen printing method or the like, then heated in nitrogen and reflowed, and finally the flux is washed with a solvent or the like. Then, the solder layer 3 is formed.

なお、錫を主成分とする半田とは、少なくとも、錫の含有率が６０質量％以上含有している半田のことを言い、上記錫−銀共晶半田以外に例えば錫−銀−銅半田（錫９５．７５質量％、銀３．５質量％、銅０．７５質量％）や、錫−銀−銅−ビスマス半田（錫９４．９５質量％、銀３．５質量％、銅０．７５質量％、ビスマス０．８質量％）等があり、表示されている組成以外にも、通常、アンチモン、鉛等の、不可避不純物が微量含まれている。   The solder containing tin as a main component means a solder containing at least 60% by mass of tin, and other than the tin-silver eutectic solder, for example, tin-silver-copper solder ( Tin 95.75 mass%, silver 3.5 mass%, copper 0.75 mass%), tin-silver-copper-bismuth solder (tin 94.95 mass%, silver 3.5 mass%, copper 0.75) Mass%, bismuth 0.8 mass%) and the like, and in addition to the indicated composition, usually, trace amounts of inevitable impurities such as antimony and lead are included.

次に、本発明の電子装置を添付の図面に基づいて詳細に説明する。図２は、本発明の電子装置の実施の形態の一例を示す断面図であり、図３はその要部拡大断面図である。   Next, an electronic device according to the present invention will be described in detail with reference to the accompanying drawings. FIG. 2 is a cross-sectional view showing an example of an embodiment of the electronic device according to the present invention, and FIG. 3 is an enlarged cross-sectional view of a main part thereof.

５は電子部品が搭載される搭載部、６は搭載部５が形成された基体、７は基体６の上面の外周部に全周にわたって形成されたメタライズ層、３’はメタライズ層７の上面に全周にわたって被着された錫を主成分としニッケルを含有した半田層、８は電子部品収納用パッケージである。そして、９は基体６の搭載部５に搭載された電子部品、１は搭載部５を塞ぐように基体６の上面に半田層３’を介して取着された板状体であり、１０は電子部品９と基体６のメタライズ配線層（図示せず）とを接続するボンディングワイヤである。   5 is a mounting portion on which electronic components are mounted, 6 is a base on which the mounting portion 5 is formed, 7 is a metallized layer formed on the entire outer periphery of the upper surface of the base 6, and 3 ′ is on the upper surface of the metallized layer 7. A solder layer 8 mainly composed of tin deposited over the entire circumference and containing nickel, and 8 is an electronic component storage package. Reference numeral 9 denotes an electronic component mounted on the mounting portion 5 of the base 6, and 1 denotes a plate-like body attached to the upper surface of the base 6 via the solder layer 3 ′ so as to close the mounting portion 5. It is a bonding wire that connects the electronic component 9 and a metallized wiring layer (not shown) of the base 6.

基体６は、その上面の中央部に電子部品９を収容するための凹部が設けられており、電子部品９はこの凹部の底面にガラスや樹脂，ろう材等の接着剤を介して接着固定される。   The base 6 is provided with a recess for accommodating the electronic component 9 at the center of the upper surface thereof, and the electronic component 9 is bonded and fixed to the bottom of the recess via an adhesive such as glass, resin, or brazing material. The

また、基体６の凹部の内面から基体６の外面にかけて、複数のメタライズ配線層(図示せず)が被着形成されており、このメタライズ配線層の基体６の凹部の内面に位置する一端には電子部品９の各電極がボンディングワイヤ１０を介して電気的に接続され、また、メタライズ配線層の基体６の外面に導出された部位には外部電気回路（図示せず）が電気的に接続される。   Further, a plurality of metallized wiring layers (not shown) are deposited from the inner surface of the recess of the base 6 to the outer surface of the base 6, and one end of the metallized wiring layer located on the inner surface of the recess of the base 6 is formed. Each electrode of the electronic component 9 is electrically connected via a bonding wire 10, and an external electric circuit (not shown) is electrically connected to a portion led out to the outer surface of the base 6 of the metallized wiring layer. The

基体６は、酸化アルミニウムやムライト，窒化アルミニウム，炭化珪素，ガラスセラミックス等を主成分とする焼結体等の電気絶縁材料から成り、例えば、酸化アルミニウム質焼結体から成る場合は、先ず、アルミナ（Ａｌ２Ｏ３）やシリカ（ＳｉＯ２），カルシア（ＣａＯ），マグネシア（ＭｇＯ）等の原料粉末に適当な有機溶剤，溶媒を添加混合して泥漿状と成し、これを従来周知のドクターブレード法やカレンダーロール法等を採用してシート状に成形してセラミックグリーンシートを得、その後、セラミックグリーンシートを所定形状に打ち抜き加工するとともに複数枚積層し、約１６００℃の温度で焼成することにより製作される。 The base 6 is made of an electrically insulating material such as a sintered body mainly composed of aluminum oxide, mullite, aluminum nitride, silicon carbide, glass ceramics, etc. For example, when it is made of an aluminum oxide sintered body, first, alumina (Al 2 O 3 ), silica (SiO 2 ), calcia (CaO), magnesia (MgO) and other raw material powders are mixed with an appropriate organic solvent and solvent to form a slurry, which is a well-known doctor. A ceramic green sheet is obtained by using a blade method, a calender roll method, or the like to obtain a ceramic green sheet. After that, a plurality of ceramic green sheets are punched into a predetermined shape, stacked, and fired at a temperature of about 1600 ° C. It is manufactured by.

また、基体６の上面の凹部の周囲に全周にわたって形成された枠状のメタライズ層７およびメタライズ配線層は、タングステンやモリブデン，マンガン等の高融点金属から成り、これらの粉末に有機溶剤，溶媒を添加混合した金属ペーストをそれぞれセラミックグリーンシートの所定位置に従来周知のスクリーン印刷法により所定パターンに被着形成させておき、セラミックグリーンシートと同時に焼成することにより形成される。なお、枠状のメタライズ層７には、その表面にニッケルやニッケル−コバルト合金、金等をめっき法等により被着させておくと良い。これにより、封止時の耐熱性向上とメタライズ層７の酸化防止層とすることができる。   Further, the frame-like metallized layer 7 and the metallized wiring layer formed around the concave portion on the upper surface of the base 6 are made of a refractory metal such as tungsten, molybdenum, manganese, and the like. Each of the metal pastes added and mixed is formed in a predetermined pattern at a predetermined position of the ceramic green sheet by a well-known screen printing method and fired simultaneously with the ceramic green sheet. The frame-like metallized layer 7 is preferably coated with nickel, nickel-cobalt alloy, gold or the like on the surface thereof by a plating method or the like. Thereby, it can be set as the heat resistance improvement at the time of sealing, and the antioxidant layer of the metallized layer 7.

そして、基体６の上面の凹部の周囲に形成されたメタライズ層７上に、本発明の蓋体４が半田層３をメタライズ層７に当接させて載置され、加熱により半田層３が溶融することにより、板状体１と基体６とが接合される。このとき半田層３は内周側に比べ、外周側のニッケルの含有率が低い半田層３’となる。   Then, the lid 4 of the present invention is placed on the metallized layer 7 formed around the recess on the upper surface of the base 6 with the solder layer 3 in contact with the metallized layer 7, and the solder layer 3 is melted by heating. By doing so, the plate-like body 1 and the base 6 are joined. At this time, the solder layer 3 becomes a solder layer 3 ′ having a lower nickel content on the outer peripheral side than on the inner peripheral side.

すなわちこの半田層３’は、下地の金属層２と、メタライズ層７とを接合する際に板状体１の下面の外周部に被着していた半田層３が溶融し、この溶融した半田３に、金属層２からニッケルが拡散されて成るものである。そして、接合後の半田層３’のニッケル濃度は、外周側が内周側より低くなっており、それによって、耐熱性、温度サイクルの信頼性の優れた電子装置となる。   That is, the solder layer 3 ′ is obtained by melting the solder layer 3 deposited on the outer peripheral portion of the lower surface of the plate-like body 1 when the metal layer 2 and the metallized layer 7 are bonded. 3 is formed by diffusing nickel from the metal layer 2. The nickel concentration of the solder layer 3 ′ after bonding is lower on the outer peripheral side than on the inner peripheral side, so that an electronic device with excellent heat resistance and temperature cycle reliability is obtained.

なお、半田層３’は、内周端から半田層３’の幅の１／４までの部位のニッケル濃度（以下、内周側のニッケル濃度という）は、０．１〜２０質量％の範囲が望ましく、外周端から半田層３’の幅の１／４までの部位のニッケル濃度（以下、外周側のニッケル濃度という）は、０．０５〜３質量％の範囲が望ましい。   In the solder layer 3 ′, the nickel concentration (hereinafter referred to as the nickel concentration on the inner peripheral side) from the inner peripheral end to ¼ of the width of the solder layer 3 ′ is in the range of 0.1 to 20% by mass. The nickel concentration in the region from the outer peripheral edge to 1/4 of the width of the solder layer 3 ′ (hereinafter referred to as the nickel concentration on the outer peripheral side) is preferably in the range of 0.05 to 3% by mass.

内周側のニッケル濃度が０．１質量％未満の場合、半田層３’の融点上昇が小さくなり、耐熱性が低下する傾向があり、内周側のニッケル濃度が２０質量％を超える場合、半田層３’がもろくなり、温度サイクル信頼性が低下する傾向がある。   When the nickel concentration on the inner peripheral side is less than 0.1% by mass, the increase in the melting point of the solder layer 3 ′ tends to be small and the heat resistance tends to decrease, and when the nickel concentration on the inner peripheral side exceeds 20% by mass, The solder layer 3 'becomes fragile and the temperature cycle reliability tends to be lowered.

また、外周側のニッケル濃度が０．０５質量％未満の場合は、半田が柔らかいために強度が低下する傾向があり、外周側のニッケル濃度が３質量％を超える場合、半田層３’の流れ性が低下するため、シール性が低下する傾向がある。   Further, when the nickel concentration on the outer peripheral side is less than 0.05% by mass, the strength tends to decrease because the solder is soft, and when the nickel concentration on the outer peripheral side exceeds 3% by mass, the flow of the solder layer 3 ′ The sealing property tends to decrease because the property decreases.

また、半田層３’の内周側のニッケル濃度に対する外周側のニッケル濃度の比率は、１０〜５０％の範囲が望ましい。半田層３’の内周側のニッケル濃度に対する外周側のニッケル濃度が１０％未満になると、内周側と外周側の組成の違いが大きいために、強度が低下しやすい傾向があり、５０％を超えると、半田層３’の流れ性が低下するため、シール性が低下する傾向がある。   The ratio of the nickel concentration on the outer peripheral side to the nickel concentration on the inner peripheral side of the solder layer 3 ′ is desirably in the range of 10 to 50%. When the nickel concentration on the outer peripheral side with respect to the nickel concentration on the inner peripheral side of the solder layer 3 ′ is less than 10%, the difference in composition between the inner peripheral side and the outer peripheral side is large, so that the strength tends to decrease, and 50% If it exceeds 1, the flowability of the solder layer 3 ′ is lowered, so that the sealing property tends to be lowered.

蓋体４は、図１では、金属層２が板状体１の下面外周部のみに全周にわたって形成されており、半田層３は、金属層２の表面の内周側に全周にわたって形成されているが、半田層３が金属層２を介して板状体１の下面の外周側に被着している構成の蓋体４であれば、図１で示される金属層２や半田層３の形状とは異なっていても図１の蓋体４と同様の効果がある。   In FIG. 1, the lid 4 has the metal layer 2 formed over the entire circumference only on the outer periphery of the lower surface of the plate-like body 1, and the solder layer 3 formed over the entire circumference on the inner circumference side of the surface of the metal layer 2. However, if the lid 4 is configured such that the solder layer 3 is attached to the outer peripheral side of the lower surface of the plate-like body 1 via the metal layer 2, the metal layer 2 and the solder layer shown in FIG. Even if the shape is different from the shape of FIG.

例えば、図４（ｂ）に示すように、金属層２が板状体１の下面の外周部に板状体１の下面の外周端との間に隙間を開けて全周にわたって形成されており、半田層３は、金属層２の表面に全周にわたって形成されていても良い。また、図４（ｃ）に示すように、金属層２が板状体１の下面の外周端との間に隙間を開けて板状体１の下面の全面に形成されており、半田層３は、金属層２の表面の外周部に全周にわたって形成されていても良い。   For example, as shown in FIG. 4B, the metal layer 2 is formed over the entire circumference with a gap between the outer peripheral portion of the lower surface of the plate-like body 1 and the outer peripheral end of the lower surface of the plate-like body 1. The solder layer 3 may be formed on the entire surface of the metal layer 2. Also, as shown in FIG. 4C, the metal layer 2 is formed on the entire lower surface of the plate-like body 1 with a gap between the outer peripheral edge of the lower surface of the plate-like body 1 and the solder layer 3. May be formed over the entire outer periphery of the surface of the metal layer 2.

また、図４（ｄ）に示すように、金属層２が板状体１の下面全面に形成されており、半田層３は、金属層２の表面の外周側に全周にわたって形成されていても良い。また、図４（ｅ）に示すように、金属層２が板状体１の上下面全面で形成されており、半田層３は、板状体１の下面側の金属層２の表面の外周側に全周にわたって形成されていても良い。また、図４（ｆ）に示すように、金属層２が板状体１の側面を含めた全面に形成されており、半田層３は、板状体１の下面側の金属層２の表面の外周側に全周にわたって形成されていても良い。   4D, the metal layer 2 is formed on the entire lower surface of the plate-like body 1, and the solder layer 3 is formed on the outer peripheral side of the surface of the metal layer 2 over the entire circumference. Also good. 4E, the metal layer 2 is formed on the entire upper and lower surfaces of the plate-like body 1, and the solder layer 3 is an outer periphery of the surface of the metal layer 2 on the lower surface side of the plate-like body 1. It may be formed over the entire circumference on the side. Further, as shown in FIG. 4 (f), the metal layer 2 is formed on the entire surface including the side surface of the plate-like body 1, and the solder layer 3 is the surface of the metal layer 2 on the lower surface side of the plate-like body 1. It may be formed over the entire circumference on the outer circumference side.

また、通常は、金属層２を形成する際に金属層２を形成させない部分に塗布されるレジストは後工程で剥離されるが、これを残した状態で製品としても良い。これにより、レジスト層を半田層３の広がり防止のための保護膜として使用させることができる。また、金属層２表面からの金属粒子の脱落防止のために金属層２の表面に後からさらにレジストを追加形成しても良い。   Usually, when the metal layer 2 is formed, the resist applied to a portion where the metal layer 2 is not formed is peeled off in a later step, but the product may be left in a state where it is left. Thereby, the resist layer can be used as a protective film for preventing the solder layer 3 from spreading. Further, a resist may be additionally formed on the surface of the metal layer 2 later to prevent the metal particles from falling off the surface of the metal layer 2.

また、本例では、板状体１は４２アロイのような鉄−ニッケル合金や、鉄−ニッケル−コバルト合金等の金属としているが、電子部品収納用パッケージ８の熱膨張と極端に熱膨張が異ならず、表面に金属層２を形成できる物質であれば、金属である必要はない。例えば、アルミナ等のセラミックスであっても良い。   In this example, the plate-like body 1 is made of a metal such as an iron-nickel alloy such as 42 alloy or an iron-nickel-cobalt alloy. However, the thermal expansion of the electronic component storage package 8 is extremely high. If it is a substance which can form the metal layer 2 on the surface, it does not need to be a metal. For example, ceramics such as alumina may be used.

本発明における蓋体４および電子装置の実施例を以下に説明する。 Examples of the lid 4 and the electronic device according to the present invention will be described below.

図４（ａ）〜（ｆ）に示されるような、金属層２の形態を変更して蓋体４を以下のような方法で作製し、電子部品収納用パッケージ８に封止して、耐熱テストおよび温度サイクルテストに投入して、評価、判定を行なった。その結果を表１に示す。

Figure 0004332047
As shown in FIGS. 4A to 4F, the shape of the metal layer 2 is changed and the lid body 4 is produced by the following method, sealed in the electronic component storage package 8, and heat resistant. The test and the temperature cycle test were evaluated and evaluated. The results are shown in Table 1.
Figure 0004332047

なお、電子装置の評価、判定については、電子部品収納用パッケージ８に蓋体を接合し、封止した製品が、耐熱テストや、温度サイクルテスト後に気密性を満足しているかどうかを確認することで、電子部品９の動作の確認の代替評価とし、判定を行なった。表の数字は、評価したサンプルの数に対する不良品の数を示す。   For evaluation and determination of electronic devices, a lid is bonded to the electronic component storage package 8 and it is confirmed whether the sealed product satisfies the airtightness after the heat resistance test or the temperature cycle test. Thus, the determination was made as an alternative evaluation for confirming the operation of the electronic component 9. The numbers in the table indicate the number of defective products relative to the number of samples evaluated.

具体的なサンプル作製方法を以下に示す。なお、サンプルａ〜ｆは図４（ａ）〜（ｆ）の各種構成に対応するものである。サンプルａ〜ｃは以下のようにして作製した。１５０ｍｍ角で厚み０．１５ｍｍの４２アロイ板を用意し、レジストを４２アロイ板の上面の全面に印刷した後、下面には各サンプル形状に応じてレジストを形成した。これにニッケル−コバルト合金から成る金属層２をめっきにより２〜５μｍの厚みで形成した。その後レジストを除去し、そして４．５ｍｍ角の打ち抜き金型により、上記めっき加工した４２アロイ板を打ち抜くことで、金属層２が形成された板状体１とした。   A specific sample preparation method is shown below. Samples a to f correspond to the various configurations shown in FIGS. Samples a to c were prepared as follows. A 42 alloy plate having a 150 mm square and a thickness of 0.15 mm was prepared, and a resist was printed on the entire upper surface of the 42 alloy plate, and then a resist was formed on the lower surface according to each sample shape. A metal layer 2 made of a nickel-cobalt alloy was formed to a thickness of 2 to 5 μm by plating. Thereafter, the resist was removed, and the plated alloy plate 42 was punched out with a 4.5 mm square punching die to obtain a plate-like body 1 on which the metal layer 2 was formed.

次に、位置決め冶具に金属層２が形成された板状体１を整列し、スクリーン印刷で金属層２の所定位置に９６．５質量％の錫および３．５質量％の銀の組成の共晶半田クリーム（「ＯＺ−２２０半田クリーム」千住金属工業(株)社製）をスクリーン印刷した。このスクリーン印刷したものを窒素雰囲気中でリフローし、フラックスを溶剤で洗浄し、乾燥することで、サンプルａ〜ｃの蓋体４を作製した。   Next, the plate-like body 1 on which the metal layer 2 is formed is aligned on a positioning jig, and the composition of 96.5% by mass of tin and 3.5% by mass of silver is placed on a predetermined position of the metal layer 2 by screen printing. Acrylic solder cream ("OZ-220 solder cream" manufactured by Senju Metal Industry Co., Ltd.) was screen-printed. The screen-printed one was reflowed in a nitrogen atmosphere, the flux was washed with a solvent, and dried to prepare the lids 4 of samples a to c.

サンプルｄは、レジストを上記４２アロイ板の上面の全面に印刷した後、下面にはレジスト印刷をせず、それ以後の工程は上記サンプルａ〜ｃと同様にして蓋体４を作製した。   In sample d, after a resist was printed on the entire upper surface of the 42 alloy plate, resist printing was not performed on the lower surface, and the lid 4 was prepared in the same manner as the samples a to c in the subsequent steps.

サンプルｅは、両面ともにレジストを上記４２アロイ板に印刷せず、それ以後の工程は上記サンプルａ〜ｃと同様にして蓋体４を作製した。   For sample e, the resist was not printed on the 42 alloy plate on both sides, and the lid 4 was prepared in the same manner as the samples a to c in the subsequent steps.

サンプルｆは、以下のようにして作製した。上記４２アロイ板を打ち抜き金型で打ち抜き、これにニッケル−コバルト合金から成る金属層２をめっきにより２〜５μｍの厚みで形成した。これを位置決め冶具に整列し、それ以降は上記サンプルａ〜ｃと同様にして蓋体４を作製した。   Sample f was produced as follows. The 42 alloy plate was punched with a punching die, and a metal layer 2 made of nickel-cobalt alloy was formed thereon with a thickness of 2 to 5 μm. This was aligned with a positioning jig, and thereafter, the lid body 4 was produced in the same manner as the samples a to c.

比較例としてのサンプルｇは以下のようにして作製した。上記４２アロイ板を打ち抜き金型で打ち抜き、そしてニッケル−コバルトめっきを形成せずに、位置決め冶具に整列し、それ以降は上記サンプルａ〜ｃと同様にして蓋体４を作製した。   Sample g as a comparative example was produced as follows. The 42 alloy plate was punched with a punching die, and aligned with a positioning jig without forming nickel-cobalt plating. Thereafter, the lid 4 was produced in the same manner as the samples a to c.

比較例としてのサンプルｈは、半田印刷前までは、サンプルｇと同様にして作製した。そして、位置決め冶具に整列し、スクリーン印刷機を用い、４２アロイ板の所定位置に９６．４質量％の錫、３．５質量％の銀および０．１質量％のニッケルの組成の半田クリームをスクリーン印刷した。リフロー以降は上記サンプルａ〜ｃと同様にして蓋体４を作製した。   Sample h as a comparative example was produced in the same manner as sample g until before solder printing. Then, align with the positioning jig, and use a screen printing machine to place a solder cream with a composition of 96.4% by mass of tin, 3.5% by mass of silver and 0.1% by mass of nickel at a predetermined position of the 42 alloy plate. Screen printed. After the reflow, the lid 4 was produced in the same manner as the samples a to c.

評価で使用する電子部品収納用パッケージ８として、酸化アルミニウム質焼結体製で、外形寸法が５．０ｍｍ角で、電子部品の搭載部５の上面寸法が３．６ｍｍ角であり、搭載部５の周囲に全周にわたって金めっき仕上げのメタライズ層７を持つ電子部品収納用パッケージ８を準備した。   The electronic component storage package 8 used in the evaluation is made of an aluminum oxide sintered body, the outer dimension is 5.0 mm square, the upper surface dimension of the electronic component mounting part 5 is 3.6 mm square, and the mounting part 5 An electronic component storage package 8 having a metallized layer 7 with a gold plating finish on the entire periphery was prepared.

蓋体４のサンプルａ〜ｈをそれぞれ電子部品収納用パッケージ８の上面にメタライズ層７と、蓋体４のサンプルの下面の外周部の半田部３とが接するように重ねあわせ、クリップで挟んで荷重を加え、ピーク温度が２８０℃となるように窒素雰囲気中で加熱することで、評価用の封止サンプルとした。そして、予め、各評価用の封止サンプルのリークテストを行うことで、初期の気密性が確保されているかどうかを確認した。   The samples a to h of the lid 4 are overlapped so that the metallized layer 7 and the solder part 3 on the outer periphery of the sample of the lid 4 are in contact with the upper surface of the electronic component storage package 8 and sandwiched by clips. A sealed sample for evaluation was obtained by applying a load and heating in a nitrogen atmosphere such that the peak temperature was 280 ° C. And it was confirmed beforehand whether the initial airtightness was ensured by performing the leak test of the sealing sample for each evaluation.

リークテストは、ＭＩＬ−Ｓｔａｎｄａｒｄ ８８３に従い、グロスリークテストとヘリウムリークテストとによって行なった。具体的には以下のように試験および判定を行なった。グロスリークテストでは、封止サンプルを加圧できる容器に入れ５×１０５Ｐａの圧力のヘリウムガスで１時間加圧し、取出した後、（「グロスリークテスター」住友３Ｍ(株)社製）を使用し、１２５℃±５℃の（「フロリナート ＦＣ−４０」住友３Ｍ(株)社製）中に各封止サンプルを浸漬して1分以内に連続気泡の発生しないものを合格とし、浸漬して1分以内に連続気泡の発生したものを不合格とする目視判定を行なった。 The leak test was performed by a gross leak test and a helium leak test according to MIL-Standard 883. Specifically, tests and determinations were performed as follows. In the gross leak test, the sealed sample is placed in a pressurizable container, pressurized with helium gas at a pressure of 5 × 10 5 Pa for 1 hour, and taken out (“Gloss leak tester” manufactured by Sumitomo 3M Co., Ltd.). Use each sealed sample in 125 ° C ± 5 ° C ("Fluorinert FC-40" manufactured by Sumitomo 3M Co., Ltd.). Visual determination was made to reject those that had open bubbles within 1 minute.

また、ヘリウムリークテストは、封止サンプルを容器に入れ５×１０５Ｐａの圧力のヘリウムガスで１時間加圧し、取出し後に常圧の大気中に３０分放置した後、へリウムリーク試験機（「ＨＥＬＩＵＭ ＬＥＡＫ ＤＥＴＥＣＴＯＲ ＨＥＬＩＯＴ、ＭＯＤＥＬ−３０５」（株）ＵＬＶＡＣ社製）で、リークするヘリウム量を測定した。ヘリウムのリーク量が１×１０−９Ｐａ・ｍ３／ｓｅｃ以下を合格とし、１×１０−９Ｐａ・ｍ３／ｓｅｃを超えたものを不合格とした。グロスリークテスト、ヘリウムリークテスト共に合格したものを良品とし、良品のみを評価テストに投入した。 In the helium leak test, a sealed sample is put in a container, pressurized with helium gas at a pressure of 5 × 10 5 Pa for 1 hour, and after taking out, left in atmospheric pressure for 30 minutes, a helium leak tester (“ The amount of helium leaking was measured with a HELIUM LEAK DETECTOR HELIOT, MODEL-305 (manufactured by ULVAC). A helium leak amount of 1 × 10 −9 Pa · m 3 / sec or less was accepted, and those exceeding 1 × 10 −9 Pa · m 3 / sec were rejected. The products that passed both the gross leak test and the helium leak test were regarded as non-defective products, and only non-defective products were put into the evaluation test.

サンプルａ〜ｈの評価サンプルを２６０℃の耐熱性テストに投入した。２６０℃の耐熱性テストは、２６０℃のヒーターブロック上に評価用サンプルを蓋体４がヒーターブロックに接するように置き、１分間放置し、その後室温の金属製トレー上で５分間放置し、室温まで冷却する。この加熱と冷却を５回繰り返すことを２６０℃の耐熱テストとした。２６０℃の耐熱性テスト後のリークテストで気密性を確認した結果、サンプルｇ、ｈでリーク不良が発生した。   Evaluation samples of samples a to h were put into a heat resistance test at 260 ° C. In the heat resistance test at 260 ° C., the sample for evaluation was placed on the heater block at 260 ° C. so that the lid 4 was in contact with the heater block, left for 1 minute, and then left on a metal tray at room temperature for 5 minutes. Allow to cool. Repeating this heating and cooling 5 times was a heat resistance test at 260 ° C. As a result of confirming hermeticity by a leak test after a heat resistance test at 260 ° C., leak failure occurred in samples g and h.

引き続いて温度サイクルテストに投入した。温度サイクルテストは、ＭＩＬ−Ｓｔａｎｄａｒｄ ８８３に準じてテストを行なった。条件は、気相中で−５５℃の低温槽で３０分放置後、１２５℃の高温槽に移動させ３０分放置することを１サイクルとし、これを所定のサイクル数繰り返すことを温度サイクルテストとした。温度サイクルテストを２５０サイクル行った後にリークテストを行ない、気密性を確認した。合格したものは、引き続き５００サイクルまで温度サイクルテストに投入し、終了後同様にリークテストで、気密性を確認した。確認の結果、温度サイクルテストでの不良は発生しなかった。   Subsequently, it was put into a temperature cycle test. The temperature cycle test was performed according to MIL-Standard 883. The condition is that it is left in a low temperature bath of −55 ° C. for 30 minutes in the gas phase, then moved to a high temperature bath of 125 ° C. and left for 30 minutes as one cycle, and this is repeated a predetermined number of cycles as a temperature cycle test. did. After 250 cycles of the temperature cycle test, a leak test was performed to confirm airtightness. Those that passed the test were continuously put into a temperature cycle test up to 500 cycles, and after completion, the leak test was performed to confirm the airtightness. As a result of the confirmation, no defect occurred in the temperature cycle test.

以上の結果から、同じ組成の半田を使用して蓋体４を構成したサンプルａ〜ｇを使用して電子部品収納用パッケージ８を封止したサンプルにおいて、金属層２が半田層３の被着領域に無い比較サンプルｇでリーク不良が発生しているのに対し、金属層２が半田層３の被着している領域全面にある本発明の形態のサンプルａ〜ｆでは不良が発生していないことから、本発明における蓋体４が優れた耐熱性を有していることが判る。 From the above results, the metal layer 2 is attached to the solder layer 3 in the sample in which the electronic component storage package 8 is sealed using the samples a to g that are configured with the lid 4 using the solder having the same composition. Whereas the leak failure occurs in the comparative sample g not in the region, the failure occurs in the samples a to f of the embodiment of the present invention in which the metal layer 2 is entirely on the region where the solder layer 3 is deposited. From this, it can be seen that the lid 4 in the present invention has excellent heat resistance.

また、本発明のサンプルａ〜ｆと比較サンプルｈを使用して電子部品収納用パッケージ８を封止したサンプルを比較してみると、比較サンプルｈは、金属層２は無く、あらかじめニッケルを均一に含有している半田を使用したものであり、封止サンプルの半田層３’では封止サンプル中のはんだ層３’の全ての部分に均一にニッケルが含有された状態になっている。   Further, when comparing the samples a to f of the present invention and the sample in which the electronic component storage package 8 is sealed using the comparative sample h, the comparative sample h does not have the metal layer 2 and is uniform in nickel. In the solder layer 3 ′ of the sealing sample, nickel is uniformly contained in all parts of the solder layer 3 ′ in the sealing sample.

この、比較サンプルｈのニッケルを含んだ半田は、半田の流動性が悪いために、封止時に十分に接合強度が確保できないことで、耐熱性が不十分となる。つまり、金属層２が電子部品収納用パッケージ８と蓋体４との接合時に半田層３に徐々に拡散することで、本発明の蓋体４の半田層３は、接合時は流動性を持ち、ニッケル濃度の低い半田が外周側に流れ出るため、半田の流動性が良く、その後ニッケルの拡散により内周側の耐熱性が高くなることで、耐熱性に優れた電子装置となるため、電子装置の半田層３’の外側の半田中のニッケル濃度が、内側の半田中のニッケル濃度より低いことが重要である。   Since the solder containing the nickel of the comparative sample h has poor fluidity of the solder, heat resistance is insufficient because sufficient bonding strength cannot be secured at the time of sealing. That is, the metal layer 2 gradually diffuses into the solder layer 3 when the electronic component storage package 8 and the lid 4 are joined, so that the solder layer 3 of the lid 4 of the present invention has fluidity when joined. Since the solder with low nickel concentration flows out to the outer peripheral side, the flowability of the solder is good, and then the heat resistance on the inner peripheral side is increased by the diffusion of nickel, so that the electronic device has excellent heat resistance. It is important that the nickel concentration in the outer solder of the solder layer 3 ′ is lower than the nickel concentration in the inner solder.

なお、本発明は上記実施の形態および実施例に限定されるものではなく、本発明の要旨を逸脱しない範囲内であれば種々の変更を行うことは何等差し支えない。   It should be noted that the present invention is not limited to the above-described embodiment and examples, and various modifications can be made without departing from the scope of the present invention.

例えば、上述の実施の形態では、金属層２の形成方法として、めっき法を使用したが、真空中で金属原子を蒸発させる蒸着法や、機械的圧力によって金属同士を接着するクラッド加工法等で形成しても良く、また、半田層３の形成方法として、クリーム半田を用いてのプリント、リフロー法を使用したが、金属層２と同様のめっき法や、クラッド加工法、半田を溶融させた槽に超音波をかけながら金属板を浸漬することで表面に半田層を形成させる溶融コート法等で形成しても良い。   For example, in the above-described embodiment, the plating method is used as a method for forming the metal layer 2, but a vapor deposition method for evaporating metal atoms in a vacuum, a clad processing method for bonding metals with mechanical pressure, or the like. The solder layer 3 may be formed by using cream solder printing or a reflow method. However, the same plating method as the metal layer 2, a clad processing method, or soldering was performed. You may form by the melt-coating method etc. which form a solder layer on the surface by immersing a metal plate, applying a ultrasonic wave to a tank.

また、例えば、上述の実施の形態では、基体６に凹部を形成し、平板状の蓋体４を封着した電子装置としたが、平板状の基体６と下面の電子部品９の搭載部５に対向する部位に凹部を設けた蓋体４を封止した形態としてもよい。   Further, for example, in the above-described embodiment, an electronic device in which a recess is formed in the base 6 and the flat lid 4 is sealed is described. However, the mounting portion 5 for the flat base 6 and the electronic component 9 on the lower surface is used. It is good also as a form which sealed the cover body 4 which provided the recessed part in the site | part which opposes.

また本発明は、電子部品９として、圧電振動子や弾性表面波素子、弾性バルク波素子等の電子部品９を収納した電子装置、加速度センサーや角速度センサー等のセンサー部品を収容した電子装置や、ＭＰＵ（Ｍｉｃｒｏ Ｐｒｏｃｅｓｓｏｒ Ｕｎｉｔ）等の半導体装置にも適用可能である。   In addition, the present invention provides an electronic device containing an electronic component 9 such as a piezoelectric vibrator, a surface acoustic wave element, or an elastic bulk wave element as an electronic component 9, an electronic device containing a sensor component such as an acceleration sensor or an angular velocity sensor, The present invention can also be applied to a semiconductor device such as an MPU (Micro Processor Unit).

本発明における蓋体の実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the cover body in this invention. 本発明の電子装置の実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the electronic device of this invention. 図２の電子装置の要部拡大断面図である。FIG. 3 is an enlarged cross-sectional view of a main part of the electronic device in FIG. 2. （ａ）〜（ｆ）は実施例で使用した蓋体の構成を示す断面図であり、（ａ）は図１の本発明における蓋体の断面図、（ｂ）〜（ｆ）は、それぞれ本発明における蓋体の実施の形態の他の例を示す断面図である。(A)-(f) is sectional drawing which shows the structure of the cover body used in the Example, (a) is sectional drawing of the cover body in this invention of FIG. 1, (b)-(f) is respectively It is sectional drawing which shows the other example of embodiment of the cover body in this invention.

符号の説明Explanation of symbols

１：板状体
２：金属層
３：半田層
４：蓋体
５：搭載部
６：基体
７：メタライズ層
９：電子部品 1: Plate-like body 2: Metal layer 3: Solder layer 4: Lid body 5: Mounting portion 6: Substrate 7: Metallized layer 9: Electronic component

Claims (1)

上面に形成された凹部の底面に電子部品の搭載部が形成された基体と、該基体の上面の前記凹部の周囲に全周にわたって形成されたメタライズ層と、該メタライズ層と蓋体の下面の外周部とを接合する、錫を主成分としニッケルを含有するとともに内周側よりも外周側がニッケルの含有率が低い半田層とを具備しており、前記蓋体が、板状体の下面の外周部に全周にわたって形成されたニッケル−コバルト合金からなる金属層と、該金属層の表面に全周にわたって形成された錫を主成分とする半田層とを具備していることを特徴とする電子装置。 A base on which an electronic component mounting portion is formed on the bottom surface of the recess formed on the top surface; a metallization layer formed around the recess on the top surface of the base; and a bottom surface of the metallization layer and the lid. A solder layer containing tin as a main component and containing nickel and having a lower nickel content than the inner peripheral side, and the lid body is formed on the lower surface of the plate-like body. the outer peripheral portion to the nickel is formed over the entire circumference - for the metal layer made of cobalt alloy, characterized that you have provided a solder layer mainly composed of tin, which is formed over the entire circumference on the surface of the metal layer Electronic equipment.
JP2004050882A 2004-02-26 2004-02-26 Electronic equipment Expired - Fee Related JP4332047B2 (en)

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CN101356728B (en) * 2006-08-10 2014-10-01 株式会社大真空 Piezoelectric vibration device
WO2021014904A1 (en) * 2019-07-25 2021-01-28 株式会社大真空 Lid material for light-emitting device, method for manufacturing lid material, and light-emitting device

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