JP4285753B2 - ハーメチックシールカバー及びその製造方法 - Google Patents
ハーメチックシールカバー及びその製造方法 Download PDFInfo
- Publication number
- JP4285753B2 JP4285753B2 JP2004181968A JP2004181968A JP4285753B2 JP 4285753 B2 JP4285753 B2 JP 4285753B2 JP 2004181968 A JP2004181968 A JP 2004181968A JP 2004181968 A JP2004181968 A JP 2004181968A JP 4285753 B2 JP4285753 B2 JP 4285753B2
- Authority
- JP
- Japan
- Prior art keywords
- seal cover
- brazing material
- layer
- plating
- brazing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 238000000034 method Methods 0.000 title claims description 10
- 238000005219 brazing Methods 0.000 claims description 92
- 239000000463 material Substances 0.000 claims description 81
- 238000007747 plating Methods 0.000 claims description 37
- 229910015363 Au—Sn Inorganic materials 0.000 claims description 35
- 229910045601 alloy Inorganic materials 0.000 claims description 29
- 239000000956 alloy Substances 0.000 claims description 29
- 229910018100 Ni-Sn Inorganic materials 0.000 claims description 20
- 229910018532 Ni—Sn Inorganic materials 0.000 claims description 20
- 230000005496 eutectics Effects 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 27
- 238000005304 joining Methods 0.000 description 17
- 239000000203 mixture Substances 0.000 description 17
- 239000000945 filler Substances 0.000 description 12
- 230000004927 fusion Effects 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000007789 sealing Methods 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 238000005275 alloying Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 229910018731 Sn—Au Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 238000004018 waxing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Ceramic Products (AREA)
Description
Claims (5)
- ベースに接合され、シールカバー本体と、該シールカバー本体表面に施されたNiメッキ層と、該Niメッキ層表面に融着されたAu−Snろう材層とを備えるハーメチックシールカバーにおいて、
前記Niメッキ層とAu−Snろう材層との間にNi−Sn合金層が予め形成されていることを特徴とするハーメチックシールカバー。 - Ni−Sn合金層の厚さが0.6〜5.0μmである請求項1記載のハーメチックシールカバー。
- Au−Snろう材層は、略共晶組織を示すものである請求項1又は請求項2記載のハーメチックシールカバー。
- Au−Snろう材層のSn濃度は20.65〜23.5重量%である請求項1〜請求項3のいずれか1項に記載のハーメチックシールカバー
- 請求項1〜請求項4のいずれかに記載のハーメチックシールカバーの製造方法であって、
シールカバー本体の表面にNiメッキする工程と、シールカバー本体の前記Niメッキ表面にAu−Snろう材を融着する工程とを含み、
融着するAu−Snろう材としてSn濃度22〜25重量%のAu−Snろう材を用い、
融着条件を加熱温度310〜350℃、加熱時間0.1〜10分間としてAu−Snろう材を融着させることを特徴とするハーメチックシールカバーの製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004181968A JP4285753B2 (ja) | 2004-06-21 | 2004-06-21 | ハーメチックシールカバー及びその製造方法 |
US11/124,498 US7495333B2 (en) | 2004-06-21 | 2005-05-06 | Seal cover structure comprising a nickel-tin (Ni—Sn) alloy barrier layer formed between a nickel (Ni) plating layer and a gold-tin (Au—Sn) brazing layer having Sn content of 20.65 to 25 WT % formed on the seal cover main body |
EP05253109A EP1610380B8 (en) | 2004-06-21 | 2005-05-19 | Hermetic seal cover and manufacturing method thereof |
DE602005020216T DE602005020216D1 (de) | 2004-06-21 | 2005-05-19 | Hermetischer Deckel und seine Herstellung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004181968A JP4285753B2 (ja) | 2004-06-21 | 2004-06-21 | ハーメチックシールカバー及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006005262A JP2006005262A (ja) | 2006-01-05 |
JP4285753B2 true JP4285753B2 (ja) | 2009-06-24 |
Family
ID=34941388
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004181968A Expired - Lifetime JP4285753B2 (ja) | 2004-06-21 | 2004-06-21 | ハーメチックシールカバー及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7495333B2 (ja) |
EP (1) | EP1610380B8 (ja) |
JP (1) | JP4285753B2 (ja) |
DE (1) | DE602005020216D1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008105258A1 (ja) * | 2007-02-26 | 2008-09-04 | Neomax Materials Co., Ltd. | 気密封止用キャップ、電子部品収納用パッケージおよび電子部品収納用パッケージの製造方法 |
US8110022B2 (en) * | 2009-04-16 | 2012-02-07 | Genesis Fueltech, Inc. | Hydrogen purifier module and method for forming the same |
US8574722B2 (en) * | 2011-05-09 | 2013-11-05 | Tyco Electronics Corporation | Corrosion resistant electrical conductor |
US9224550B2 (en) | 2012-12-26 | 2015-12-29 | Tyco Electronics Corporation | Corrosion resistant barrier formed by vapor phase tin reflow |
KR102311677B1 (ko) | 2014-08-13 | 2021-10-12 | 삼성전자주식회사 | 반도체소자 및 그 제조방법 |
CN113394186B (zh) * | 2021-06-11 | 2022-06-14 | 赛创电气(铜陵)有限公司 | 金属叠层结构、芯片及其制造、焊接方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4746583A (en) * | 1986-11-21 | 1988-05-24 | Indium Corporation | Ceramic combined cover |
JPS63240051A (ja) | 1987-03-27 | 1988-10-05 | Nec Corp | セラミツクキヤツプ |
JP2579315B2 (ja) * | 1987-06-17 | 1997-02-05 | 新光電気工業株式会社 | セラミツクパツケ−ジ |
JPH0741159Y2 (ja) * | 1988-10-07 | 1995-09-20 | 日本特殊陶業株式会社 | 気密封止型セラミックパッケージ |
JP2647194B2 (ja) | 1989-04-17 | 1997-08-27 | 住友電気工業株式会社 | 半導体用パッケージの封止方法 |
DE69322994T2 (de) | 1992-05-01 | 1999-08-05 | At & T Corp | Verfahren zum Löten |
USH1934H1 (en) * | 1992-05-01 | 2001-01-02 | Lucent Technologies, Inc. | Gold-tin solder suitable for self-aligning applications |
JP3222815B2 (ja) | 1997-09-24 | 2001-10-29 | 株式会社住友金属エレクトロデバイス | 光通信用パッケージ |
WO2001076335A1 (en) * | 2000-03-30 | 2001-10-11 | Rohm Co., Ltd. | Mounting structure of electronic device and method of mounting electronic device |
JP2001176999A (ja) * | 2000-11-27 | 2001-06-29 | Tanaka Kikinzoku Kogyo Kk | 電子部品の気密封止方法 |
DE60217199T2 (de) | 2001-02-09 | 2007-10-04 | Taiho Kogyo Co., Ltd., Toyota | Bleifreies Weichlot und Weichlotverbindung |
JP2003142615A (ja) | 2001-11-01 | 2003-05-16 | Sumitomo Metal Mining Co Ltd | ハーメチックシールカバーの製造方法 |
JP4766831B2 (ja) * | 2002-11-26 | 2011-09-07 | 株式会社村田製作所 | 電子部品の製造方法 |
JP4014549B2 (ja) * | 2003-09-18 | 2007-11-28 | 富士電機システムズ株式会社 | ヒートシンク及びその製造方法 |
EP1591191B1 (en) * | 2004-02-20 | 2008-04-02 | Tanaka Kikinzoku Kogyo K.K. | Joining method by Au-Sn brazing material, its thickness being i.a. dependent on the Sn-content |
-
2004
- 2004-06-21 JP JP2004181968A patent/JP4285753B2/ja not_active Expired - Lifetime
-
2005
- 2005-05-06 US US11/124,498 patent/US7495333B2/en active Active
- 2005-05-19 EP EP05253109A patent/EP1610380B8/en active Active
- 2005-05-19 DE DE602005020216T patent/DE602005020216D1/de active Active
Also Published As
Publication number | Publication date |
---|---|
DE602005020216D1 (de) | 2010-05-12 |
US20060001172A1 (en) | 2006-01-05 |
JP2006005262A (ja) | 2006-01-05 |
US7495333B2 (en) | 2009-02-24 |
EP1610380A2 (en) | 2005-12-28 |
EP1610380B8 (en) | 2010-05-26 |
EP1610380A3 (en) | 2007-08-29 |
EP1610380B1 (en) | 2010-03-31 |
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