JP4266073B2 - Shelf assembly method - Google Patents

Shelf assembly method Download PDF

Info

Publication number
JP4266073B2
JP4266073B2 JP2001012895A JP2001012895A JP4266073B2 JP 4266073 B2 JP4266073 B2 JP 4266073B2 JP 2001012895 A JP2001012895 A JP 2001012895A JP 2001012895 A JP2001012895 A JP 2001012895A JP 4266073 B2 JP4266073 B2 JP 4266073B2
Authority
JP
Japan
Prior art keywords
setter
substrate
stage
assembly method
upper lid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001012895A
Other languages
Japanese (ja)
Other versions
JP2002220245A (en
Inventor
聡 谷口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Priority to JP2001012895A priority Critical patent/JP4266073B2/en
Publication of JP2002220245A publication Critical patent/JP2002220245A/en
Application granted granted Critical
Publication of JP4266073B2 publication Critical patent/JP4266073B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00Technologies relating to the processing of minerals
    • Y02P40/50Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57Improving the yield, e-g- reduction of reject rates

Description

【0001】
【発明の属する技術分野】
本発明は、プラズマディスプレイパネル用ガラス基板のような膜形成素材が塗布された基板を2段に積んで焼成する際の棚組方法に関する。
【0002】
【従来の技術】
近年、壁掛けテレビやマルチメディア用ディスプレイとして利用できる大画面フラットパネルディスプレイ(以下、「FPD」という。)の実用化が着々と進行しつつある。このような大画面FPDとしては、自発光型で広い視野角を持ち、品質表示が良いという品質面のメリットと、作製プロセスが簡単で大型化が容易という製造面でのメリットを兼ね備えた、プラズマディスプレイパネル(以下、「PDP」という。)が最有力候補として挙げられている。
【0003】
PDPの製造は、例えば図4に示すように、前面ガラス、背面ガラスと称する大型ガラス基板の表面に、印刷、乾燥、焼成の工程を複数回繰り返す厚膜法により、電極、誘導体、蛍光体等の種々の部材を逐次形成して行き、最終的に前面ガラスと背面ガラスとを封着することにより行われる。
【0004】
前記PDP用ガラス基板のような膜形成素材が塗布された基板の焼成は、当該基板を高熱伝導性材料からなるセッター上に載置して行われ、最近では、生産性向上のため基板を載置したセッターを2段に積み上げた状態で焼成が行われるようになってきている。
【0005】
図2は従来の2段積み焼成の状態を示したものであり、この場合の棚組方法としては、まず、基板1aを載置した1段目のセッター23上にスペーサー9aを介して基板1bを載置した2段目のセッター25を積み上げ、更にボロフリによる基板の汚染を防止するため、2段目のセッター上にスペーサー9bを介して板状の上蓋27を被せるようにしていた。なお、セッター23、25及び上蓋27には、いずれもSi含浸SiCのような光非透過性の高熱伝導性材料からなるものが使用されていた。
【0006】
【発明が解決しようとする課題】
2段積み焼成は、前記のように2段積みした基板1a、1bを、ローラー等の搬送手段15によって加熱室に搬送し、加熱室の上部と下部とに設けられた電気ヒーター等の加熱手段11a、11bで加熱することにより行われる。
【0007】
しかしながら、前記のような棚組方法で2段積み焼成を行った場合、1段目のセッター23に載置された基板1aには、主に下部の加熱手段11bにより加熱された1段目のセッター23から直接熱が伝導するのに対し、2段目のセッター25に載置された基板1bは、主に上部の加熱手段11aにより加熱された上蓋27からの輻射により加熱されるため、1段目のセッター23に載置された基板1aよりも加熱速度が遅く、基板内に温度分布も生じやすいという問題があった。
【0008】
本発明は、このような従来の事情に鑑みてなされたものであり、その目的とするところは、PDP用ガラス基板のような膜形成素材が塗布された基板を2段積みで焼成する際に、2段目のセッターに載置した基板の加熱速度が、1段目のセッターに載置した基板の加熱速度と同程度となるような棚組方法を提供することにある。
【0009】
【課題を解決するための手段】
本発明によれば、膜形成素材が塗布された基板を載置したセッターを、スペーサーを介して2段に積み上げ、更に2段目のセッター上にスペーサーを介して板状の上蓋を被せる棚組方法であって、前記上蓋を光透過性材料からなるものとするとともに、前記セッターを高熱伝導性材料からなるものとしたことを特徴とする棚組方法、が提供される。
【0010】
【発明の実施の形態】
図1は、本発明の棚組方法を用いた2段積み焼成の状態を示す説明図である。基本的な棚組の構造は、従来と同様に、まず、膜形成素材が塗布された基板(以下、単に「基板」という。)1aを載置した1段目のセッター3上にスペーサー9aを介して同じく基板1bを載置した2段目のセッター5を積み上げ、更に2段目のセッター5上にスペーサー9bを介して板状の上蓋7を被せるが、本発明では、棚組の最上部に位置する上蓋7を光透過性材料からなるものとすることを特徴としている。
【0011】
このように、光透過性材料からなる上蓋7を用いると、光非透過性材料からなる上蓋を用いた場合に比して、加熱室の上部に設けられた電気ヒータ等の加熱手段11aから発せられる熱が、2段目のセッター5に載置した基板1bに直接伝わりやすくなり、その結果、1段目のセッター3に載置した基板1aとの加熱速度の差が小さくなる。なお、基板1a、1bとそれぞれ直接接触する1段目及び2段目のセッター3、5は、加熱手段から受けた熱を基板に効率よく伝導できるような高熱伝導性材料からなるものとする。
【0012】
本発明において、上蓋7を構成する光透過性材料としては結晶化ガラスが好ましい。また、1段目及び2段目のセッター3、5を構成する高熱伝導性材料としてはSi含浸SiCが好ましい。ここで、Si含浸SiCとは、金属SiとSiCを構成成分として含む焼結体を総称するが、本発明においては、本出願人が既に開示した、SiC粉体、黒煙粉、有機質バインダー及び、水分又は有機溶剤を含有してなる成型用原料を成形し、当該成形体を金属Si雰囲気で、かつ減圧の不活性ガス雰囲気又は真空中において、1350〜2500℃で焼成する方法により製造してなるSi−SiC焼結体(特開平5−270917号公報)を用いることが好ましい。このようなSi含浸SiCからなるセッターは、高強度で高い熱伝導率を有する。
【0013】
また、本発明においては、2段目のセッターの幅方向と長手方向の少なくとも一方の長さを、1段目のセッター及び上蓋よりも長くなるようにすることが好ましい。通常、基板の降温(徐冷)工程における冷却は、加熱室の上部と下部とに設けた導入孔からエアーを吹き込むことによって行うが、2段に積まれた基板のどちらか一方の温度が下がりにくいような場合には、その温度が下がりにくい方の基板を選択的に冷却する必要が生ずる。しかしながら、従来の棚組方法においては、2段に積まれた基板のどちらか一方にエアーを集中することができず、降温工程での基板の温度管理が困難であった。
【0014】
これに対し、図1のように2段目のセッター5の幅方向と長手方向の少なくとも一方の長さを、1段目のセッター3及び上蓋7よりも長くなるようにすると、2段目のセッター5の突出した部分によって、上部の導入孔13aから矢印方向に吹き込まれたエアーは2段目のセッター5に載置された基板1bに集中的に当たる一方で、1段目のセッター3に載置された基板1aに当たるのは妨げられる。同様に、下部の導入孔13bから吹き込まれたエアーは1段目のセッター3に載置された基板1aに集中的に当たる一方で、2段目のセッター5に載置された基板1bに当たるのを妨げられる。このように、2枚の基板は、ぞれぞれ上部の導入孔11a又は下部の導入孔11bからのエアーの吹き込みによって、独立して冷却することができるので、一方の基板のみ選択的に冷却することも可能になる。
【0015】
【実施例】
以下、本発明を実施例に基づいて更に詳細に説明するが、本発明はこれらの実施例に限定されるものではない。
【0016】
(実施例)
60インチのPDP用ガラス基板をそれぞれ載置したSi含浸SiC製のセッターを、スペーサーを介して2段に積み上げ、更に2段目のセッター上にスペーサーを介して結晶化ガラス製の上蓋を被せて棚組みした。加熱手段として上部と下部とに電気ヒーターを備える加熱室が連続的に区画形成された連続炉内にて、前記のように棚組みしたPDP用ガラス基板を搬送させて焼成を行った。なお、各加熱室は、セッター上のPDP用ガラス基板が炉の入口から出口まで搬送される間に、所定のヒートカーブ(最高焼成温度:580℃)で焼成されるように温度設定を行った。1段目及び2段目のセッターに載置された各PDP用ガラス基板の表面には、図3に示すように▲1▼〜▲9▼の9箇所に熱電対を設置し、焼成開始から60分後、65分後、70分後、75分後の基板内の温度分布を調べた。その結果を表1に示す。
【0017】
(比較例)
Si含浸SiC製の上蓋を用いた以外は、前記実施例と同様に棚組みして、PDP用ガラス基板を焼成し、基板内の温度分布を調べた。その結果を表2に示す。
【0018】
【表1】

Figure 0004266073
【0019】
【表2】
Figure 0004266073
【0020】
上記表1及び表2に示す結果より、光透過性材料である結晶化ガラス製の上蓋を用いて棚組みを行った実施例は、光非透過性材料であるSi含浸SiC製の上蓋を用いて棚組みを行った比較例に比して、2段目のセッターに載置した基板の加熱速度が速く、1段目のセッターに載置した基板とほぼ同等の速度で加熱が進行していたことが確認された。
【0021】
【発明の効果】
以上説明したように、本発明によれば、PDP用ガラス基板のような膜形成素材が塗布された基板を2段積みで焼成する際に、2段目のセッターに載置した基板の加熱速度を、1段目のセッターに載置した基板の加熱速度と同程度とすることができる。
【図面の簡単な説明】
【図1】 本発明の棚組方法を用いた2段積み焼成の状態を示す説明図である。
【図2】 従来の棚組方法を用いた2段積み焼成の状態を示す説明図である。
【図3】 実施例において用いたPDP用ガラス基板の熱電対設置位置を示す説明図である。
【図4】 PDPの製造工程を示す工程図である。
【符号の説明】
1a…基板、1b…基板、3…1段目のセッター、5…2段目のセッター、7…上蓋、9a…スペーサー、9b…スペーサー、11a…加熱手段、11b…加熱手段、13a…導入孔、13b…導入孔、15…搬送手段、23…1段目のセッター、25…2段目のセッター、27…上蓋。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a shelf assembling method for stacking and baking a substrate coated with a film forming material such as a glass substrate for a plasma display panel in two stages.
[0002]
[Prior art]
In recent years, a large-screen flat panel display (hereinafter referred to as “FPD”) that can be used as a wall-mounted television or a multimedia display has been steadily being put into practical use. As such a large screen FPD, it is a self-luminous plasma that has a wide viewing angle, a quality advantage of good quality display, and a manufacturing advantage that the production process is simple and easy to enlarge. A display panel (hereinafter referred to as “PDP”) is cited as the most promising candidate.
[0003]
For example, as shown in FIG. 4, the PDP is manufactured by using a thick film method in which printing, drying, and firing steps are repeated a plurality of times on the surface of a large glass substrate called a front glass and a back glass. The various members are sequentially formed and finally the front glass and the rear glass are sealed.
[0004]
Firing of a substrate coated with a film forming material such as the glass substrate for PDP is carried out by placing the substrate on a setter made of a high thermal conductivity material. Recently, the substrate is placed for improving productivity. Firing has been performed in a state where the setters placed are stacked in two stages.
[0005]
FIG. 2 shows a state of the conventional two-stage stacking firing. In this case, as a method of assembling, first, the substrate 1b is placed on the first setter 23 on which the substrate 1a is placed via the spacer 9a. In order to prevent the substrate from being contaminated by boro-furri, the plate-shaped upper lid 27 is placed on the second-stage setter via a spacer 9b. For the setters 23 and 25 and the upper lid 27, those made of a light non-transparent highly heat conductive material such as Si-impregnated SiC were used.
[0006]
[Problems to be solved by the invention]
In the two-stage stacking firing, the substrates 1a and 1b stacked in two stages as described above are transported to the heating chamber by the transporting means 15 such as a roller, and heating means such as an electric heater provided at the upper and lower portions of the heating chamber. It is performed by heating at 11a and 11b.
[0007]
However, when the two-stage stack firing is performed by the shelf assembly method as described above, the first stage heated mainly by the lower heating means 11b is not applied to the substrate 1a placed on the first setter 23. While heat is directly conducted from the setter 23, the substrate 1b placed on the second-stage setter 25 is heated by radiation from the upper lid 27 heated mainly by the upper heating means 11a. There was a problem that the heating rate was slower than that of the substrate 1a placed on the stage setter 23, and temperature distribution was likely to occur in the substrate.
[0008]
This invention is made | formed in view of such a conventional situation, and the place made into the objective is when baking the board | substrate with which film | membrane formation raw materials like the glass substrate for PDP were apply | coated by two-step stacking | stacking An object of the present invention is to provide a shelf assembly method in which the heating rate of the substrate placed on the second setter is approximately the same as the heating rate of the substrate placed on the first setter.
[0009]
[Means for Solving the Problems]
According to the present invention, a setter on which a substrate coated with a film forming material is placed is stacked in two stages via a spacer, and a plate-like upper cover is placed on the second setter via a spacer. There is provided a shelf assembling method characterized in that the upper lid is made of a light transmissive material and the setter is made of a high thermal conductivity material.
[0010]
DETAILED DESCRIPTION OF THE INVENTION
FIG. 1 is an explanatory diagram showing a state of two-stage stacking using the shelf assembly method of the present invention. As in the conventional structure, the basic shelf structure is as follows. First, a spacer 9a is placed on the first setter 3 on which a substrate (hereinafter simply referred to as “substrate”) 1a coated with a film forming material is placed. Similarly, the second setter 5 on which the substrate 1b is placed is stacked, and a plate-like upper lid 7 is placed on the second setter 5 via a spacer 9b. The upper lid 7 located in the position is made of a light transmissive material.
[0011]
In this way, when the upper lid 7 made of a light transmissive material is used, it is emitted from the heating means 11a such as an electric heater provided in the upper part of the heating chamber, as compared with the case where the upper lid made of a light non-transmissive material is used. Heat is easily transferred directly to the substrate 1b placed on the second-stage setter 5, and as a result, the difference in heating rate from the substrate 1a placed on the first-stage setter 3 is reduced. The first-stage and second-stage setters 3 and 5 that are in direct contact with the substrates 1a and 1b are made of a highly thermally conductive material that can efficiently conduct the heat received from the heating means to the substrate.
[0012]
In the present invention, crystallized glass is preferable as the light transmissive material constituting the upper lid 7. Si-impregnated SiC is preferable as the high thermal conductivity material constituting the first and second stage setters 3 and 5. Here, the Si-impregnated SiC is a generic term for sintered bodies containing metal Si and SiC as constituent components. In the present invention, the SiC powder, black smoke powder, organic binder, and The molding raw material containing moisture or an organic solvent is molded, and the molded body is manufactured by a method of firing at 1350 to 2500 ° C. in a metal Si atmosphere and in a reduced pressure inert gas atmosphere or vacuum. It is preferable to use a Si-SiC sintered body (Japanese Patent Laid-Open No. 5-270917). Such a setter made of Si-impregnated SiC has high strength and high thermal conductivity.
[0013]
In the present invention, it is preferable that the length of at least one of the second-stage setter in the width direction and the longitudinal direction is longer than that of the first-stage setter and the upper lid. Usually, the cooling in the temperature lowering (slow cooling) step of the substrate is performed by blowing air from the introduction holes provided in the upper and lower portions of the heating chamber, but the temperature of either one of the substrates stacked in two stages decreases. In such a case, it is necessary to selectively cool the substrate whose temperature is less likely to decrease. However, in the conventional shelf assembly method, air cannot be concentrated on either one of the substrates stacked in two stages, and it is difficult to control the temperature of the substrate in the temperature lowering process.
[0014]
On the other hand, if the length of at least one of the width direction and the longitudinal direction of the second-stage setter 5 is made longer than the first-stage setter 3 and the upper lid 7 as shown in FIG. The air blown in the direction of the arrow from the upper introduction hole 13a is concentrated on the substrate 1b placed on the second stage setter 5 by the protruding portion of the setter 5, while the air is placed on the first stage setter 3. It is prevented from hitting the placed substrate 1a. Similarly, the air blown from the lower introduction hole 13b intensively hits the substrate 1a placed on the first setter 3, while hitting the substrate 1b placed on the second setter 5. Be disturbed. In this way, the two substrates can be cooled independently by blowing air from the upper introduction hole 11a or the lower introduction hole 11b, so that only one substrate is selectively cooled. It is also possible to do.
[0015]
【Example】
EXAMPLES Hereinafter, although this invention is demonstrated further in detail based on an Example, this invention is not limited to these Examples.
[0016]
(Example)
Si-impregnated SiC setters each mounted with a 60-inch PDP glass substrate are stacked in two stages via a spacer, and a crystallized glass top cover is placed on the second setter via a spacer. Shelved. In a continuous furnace in which heating chambers having electric heaters at upper and lower portions as continuous heating means were continuously formed, the glass substrates for PDP assembled as described above were conveyed and fired. Each heating chamber was temperature-set so that the PDP glass substrate on the setter was fired at a predetermined heat curve (maximum firing temperature: 580 ° C.) while the glass substrate for PDP was transported from the entrance to the exit of the furnace. . On the surface of each PDP glass substrate placed on the first-stage and second-stage setters, thermocouples are installed at nine locations (1) to (9) as shown in FIG. The temperature distribution in the substrate after 60 minutes, 65 minutes, 70 minutes, and 75 minutes was examined. The results are shown in Table 1.
[0017]
(Comparative example)
Except for using the Si-impregnated SiC top cover, the glass substrate for PDP was baked in the same manner as in the above example, and the temperature distribution in the substrate was examined. The results are shown in Table 2.
[0018]
[Table 1]
Figure 0004266073
[0019]
[Table 2]
Figure 0004266073
[0020]
From the results shown in Tables 1 and 2 above, the example in which shelving was performed using a crystallized glass top lid, which is a light transmissive material, uses a Si-impregnated SiC top lid, which is a light non-transmissive material. The heating rate of the substrate placed on the second setter is faster than that of the comparative example in which the shelf is assembled, and the heating is proceeding at a rate almost equal to that of the substrate placed on the first setter. It was confirmed that
[0021]
【The invention's effect】
As described above, according to the present invention, when a substrate coated with a film forming material such as a glass substrate for PDP is baked in a two-layer stack, the heating rate of the substrate placed on the second setter The heating rate of the substrate placed on the first-stage setter can be made approximately the same.
[Brief description of the drawings]
FIG. 1 is an explanatory diagram showing a state of two-stage stacking using the shelf assembly method of the present invention.
FIG. 2 is an explanatory view showing a state of two-stage stack firing using a conventional shelf assembly method.
FIG. 3 is an explanatory view showing a thermocouple installation position of a glass substrate for PDP used in an example.
FIG. 4 is a process diagram showing a manufacturing process of a PDP.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1a ... Substrate, 1b ... Substrate, 3 ... First-stage setter, 5 ... Second-stage setter, 7 ... Upper lid, 9a ... Spacer, 9b ... Spacer, 11a ... Heating means, 11b ... Heating means, 13a ... Introduction hole 13b ... introduction hole, 15 ... conveying means, 23 ... first-stage setter, 25 ... second-stage setter, 27 ... upper cover.

Claims (3)

膜形成素材が塗布された基板を載置したセッターを、スペーサーを介して2段に積み上げ、更に2段目のセッター上にスペーサーを介して板状の上蓋を被せる棚組方法であって、
前記上蓋を光透過性材料からなるものとするとともに、前記セッターを高熱伝導性材料からなるものとしたことを特徴とする棚組方法。
A shelf assembly method in which a setter on which a substrate coated with a film forming material is placed is stacked in two stages via a spacer, and a plate-shaped upper lid is placed on the second setter via a spacer,
A shelf assembling method, wherein the upper lid is made of a light-transmitting material, and the setter is made of a highly heat conductive material.
前記光透過性材料が結晶化ガラスであり、前記高熱伝導性材料がSi含浸SiCである請求項1記載の棚組方法。The shelf assembly method according to claim 1, wherein the light transmissive material is crystallized glass, and the high thermal conductivity material is Si-impregnated SiC. 2段目のセッターの幅方向と長手方向の少なくとも一方の長さを、1段目のセッター及び上蓋よりも長くなるようにした請求項1又は2に記載の棚組方法。The shelf assembly method according to claim 1 or 2, wherein at least one of the width direction and the longitudinal direction of the second-stage setter is longer than the first-stage setter and the upper lid.
JP2001012895A 2001-01-22 2001-01-22 Shelf assembly method Expired - Fee Related JP4266073B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001012895A JP4266073B2 (en) 2001-01-22 2001-01-22 Shelf assembly method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001012895A JP4266073B2 (en) 2001-01-22 2001-01-22 Shelf assembly method

Publications (2)

Publication Number Publication Date
JP2002220245A JP2002220245A (en) 2002-08-09
JP4266073B2 true JP4266073B2 (en) 2009-05-20

Family

ID=18879835

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001012895A Expired - Fee Related JP4266073B2 (en) 2001-01-22 2001-01-22 Shelf assembly method

Country Status (1)

Country Link
JP (1) JP4266073B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7111643B2 (en) 2019-03-18 2022-08-02 株式会社東芝 Semiconductor device and its manufacturing method

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4897256B2 (en) * 2005-07-26 2012-03-14 昭和鉄工株式会社 heating furnace
KR100768421B1 (en) 2006-09-26 2007-10-18 아프로시스템 주식회사 Metal mixed liquid and pdp furnace setter by using the mixed liquid coating thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7111643B2 (en) 2019-03-18 2022-08-02 株式会社東芝 Semiconductor device and its manufacturing method

Also Published As

Publication number Publication date
JP2002220245A (en) 2002-08-09

Similar Documents

Publication Publication Date Title
TWM247808U (en) Heating furnace including vertically spaced-apart double-sided far-infrared-radiation panel heaters defining multi-stage drying chambers
JP2011065967A (en) Heating and drying device for organic el
JP4266073B2 (en) Shelf assembly method
JP4317883B2 (en) Support pin manufacturing method, support pin, heat treatment apparatus, and substrate firing furnace
KR101169106B1 (en) Multi-stage baking apparatus for plasma display panel
JP3683166B2 (en) Substrate heat treatment method and continuous heat treatment furnace used therefor
CN1922116A (en) Method of sealing glass panel assembly and sealing furnace
JP2001241855A (en) Continuous heating oven
CN1517962A (en) Heat-treating method for substrate and heat treating furnace
JP2007051038A (en) Continuous firing apparatus for flat glass plate
JP2001012848A (en) Method for drying paste of plate-shaped product
JP2005114284A (en) Kiln
JP3953687B2 (en) Baking treatment method and baking furnace
JP2002277167A (en) Roller hearth heat-treatment furnace
JP2001153564A (en) Continuous heating furnace for substrate, utilizing radiant tube burner
JP2001012860A (en) Continuous heating furnace for large size glass substrate
JP2003077398A (en) Manufacturing method of plasma display panel and furnace equipment for same
JP2002206863A (en) Continuously heat treating furnace
JP4155433B2 (en) Setter for firing treatment
JP4233350B2 (en) Method for drying substrate including film forming material and drying furnace
JPH10149994A (en) Substrate heating device for semiconductor-manufacturing device
JP2010218812A (en) Heating drying device, heating drying method, and manufacturing method of organic el element
JP2003331724A (en) Cooling method of glass substrate for plasma display panel
KR100694496B1 (en) Cart for transferring plasma display panel
KR100468441B1 (en) Method for forming a dielectric film

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060825

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080917

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090210

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090213

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120227

Year of fee payment: 3

LAPS Cancellation because of no payment of annual fees