JP4244229B2 - Electrostatic chuck - Google Patents

Electrostatic chuck Download PDF

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JP4244229B2
JP4244229B2 JP2006031545A JP2006031545A JP4244229B2 JP 4244229 B2 JP4244229 B2 JP 4244229B2 JP 2006031545 A JP2006031545 A JP 2006031545A JP 2006031545 A JP2006031545 A JP 2006031545A JP 4244229 B2 JP4244229 B2 JP 4244229B2
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electrostatic chuck
titanium oxide
dielectric
alumina
volume resistivity
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JP2007214287A (en
JP2007214287A5 (en
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正美 安藤
淳 宮地
修 岡本
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Toto Ltd
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Toto Ltd
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Priority to JP2006031545A priority Critical patent/JP4244229B2/en
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Priority to US12/086,967 priority patent/US7907383B2/en
Priority to CN2007800045852A priority patent/CN101379607B/en
Priority to TW096104666A priority patent/TWI342059B/en
Priority to KR1020087018298A priority patent/KR100989230B1/en
Priority to PCT/JP2007/052175 priority patent/WO2007091619A1/en
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
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    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

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Description

本発明は半導体ウエハおよびＦＰＤ用ガラス基板等の被吸着物を静電力で吸着固定する静電チャックに関する発明である。   The present invention relates to an electrostatic chuck for attracting and fixing an object to be adsorbed such as a semiconductor wafer and a glass substrate for FPD by electrostatic force.

従来の静電チャックセラミック誘電体は、その電気特性を制御することを目的として構成されていた（例えば、特許文献１参照）。
このような場合、プラズマ環境下にセラミック組織がさらされた場合、組織が侵食を受け表面粗さが悪くなりその結果、静電チャック表面とウェハ間の接触状態が変化することによる経時変化が生じたり、焼結体から粒子が脱粒しパーティクルとして発塵しＬＳＩの配線間ショートを引き起こすなどの原因となる場合があった。 Conventional electrostatic chuck ceramic dielectrics have been configured for the purpose of controlling their electrical characteristics (see, for example, Patent Document 1).
In such a case, when the ceramic structure is exposed to a plasma environment, the structure is eroded and the surface roughness is deteriorated, resulting in a change with time due to a change in the contact state between the electrostatic chuck surface and the wafer. In some cases, particles may fall from the sintered body and be generated as particles, causing a short circuit between LSI wirings.

また、粒子径が２μｍ以下、相対密度９９．９％であって耐プラズマ性を向上させたアルミナセラミック材料で静電チャックに適用した例もある（例えば、特許文献２参照。）。しかし、この場合も耐プラズマ性は良好であってもその電気物性に関しての記載がなく大きな吸着力が発現するいわゆるジョンセンッラーベック型静電チャックの基本的な機能を発揮させられない。   Also, there is an example in which an alumina ceramic material having a particle size of 2 μm or less and a relative density of 99.9% and improved plasma resistance is applied to an electrostatic chuck (for example, see Patent Document 2). However, even in this case, even if the plasma resistance is good, there is no description about the electrical physical properties, and the basic function of the so-called John Seller Beck type electrostatic chuck that expresses a large adsorption force cannot be exhibited.

また、酸化チタンが０．１〜１ｗｔ％含有し、体積抵抗率を１００〜１０４Ωｃｍを示すアルミナセラミックが開示されている（例えば、特許文献３参照。）。しかし、この場合静電チャックとしての機能を発揮させるような電気特性を得ることができない。 Further, an alumina ceramic containing 0.1 to 1 wt% of titanium oxide and having a volume resistivity of 10 0 to 10 4 Ωcm is disclosed (for example, see Patent Document 3). However, in this case, it is not possible to obtain electrical characteristics that can function as an electrostatic chuck.

また、アルミナセラミックに酸化チタンを０．５〜２ｗｔ％添加することにより誘電体の体積抵抗率を低くした静電チャックが開示されている。（例えば、特許文献４参照。）この場合、０．５ｗｔ％より低いと抵抗が下がらず、２ｗｔ％以上添加すると電流が流れすぎることが開示されている。さらに酸化チタンはアルミナセラミックスの粒界に析出することが開示されている。すなわち体積抵抗率を下げるには少なくとも０．５ｗｔ％以上の添加物が必要であり、被吸着物に対する不純物の混入に厳しい制約のある静電チャックとしては添加物の量が多い。   Also disclosed is an electrostatic chuck in which the volume resistivity of the dielectric is reduced by adding 0.5 to 2 wt% of titanium oxide to alumina ceramic. (For example, refer to Patent Document 4.) In this case, it is disclosed that the resistance does not decrease when the content is lower than 0.5 wt%, and the current flows too much when 2 wt% or more is added. Furthermore, it is disclosed that titanium oxide precipitates at the grain boundaries of alumina ceramics. That is, an additive of at least 0.5 wt% or more is necessary to reduce the volume resistivity, and the amount of the additive is large as an electrostatic chuck having severe restrictions on the mixing of impurities into the adsorbed object.

また、アルミナが９９％以上、平均粒子径が１〜３μｍであり、３００〜５００℃においてその体積抵抗率が１０８〜１０１１Ωｃｍとなるような静電チャックが開示されている。（例えば、特許文献５）しかし、それ以外の温度例えば１００℃以下の比較的低温で使用される静電チャックに必要な誘電体の物性に関する記載はない。
特許第３０８４８６９号公報 特開平１０−２７９３４９号公報 特開平２００４−１８２９６号公報 特公平６−９７６７５号公報 特開平１１−３１２７２９号公報 Further, an electrostatic chuck is disclosed in which alumina is 99% or more, the average particle diameter is 1 to 3 μm, and the volume resistivity is 10 8 to 10 11 Ωcm at 300 to 500 ° C. (For example, Patent Document 5) However, there is no description regarding the physical properties of the dielectric necessary for the electrostatic chuck used at other temperatures, for example, at a relatively low temperature of 100 ° C. or lower.
Japanese Patent No. 3084869 JP-A-10-279349 Japanese Patent Laid-Open No. 2004-18296 Japanese Patent Publication No. 6-97675 Japanese Patent Laid-Open No. 11-312729

本発明は、プラズマにさらされた後も平滑な面が維持できその結果、シリコンウェハ等の被吸着物に対するパーティクル汚染を抑制でき、かつ被吸着体の吸着、離脱特性の優れ、低温焼成で作製することが容易な静電チャックを提供することである。   The present invention can maintain a smooth surface even after being exposed to plasma. As a result, it can suppress particle contamination of the adsorbed material such as a silicon wafer and has excellent adsorption and desorption characteristics of the adsorbed material. An electrostatic chuck that is easy to do is to be provided.

本発明の一態様によれば、アルミナと酸化チタンの焼成体からなる誘電体を備えた静電チャックであって、アルミナの重量パーセントをＸ、酸化チタンの重量パーセントを（１００−Ｘ）としたときに、Ｘが９９．４ｗｔ％以上であり９９．８ｗｔ％よりも小さく、かさ密度が３．９７ｇ／ｃｍ ３ 以上であり、体積抵抗率が室温において１０ ８ 〜１０ １１ Ωｃｍ、かつアルミナ粒子の粒界に酸化チタンが偏析し連続的につながった構造の静電チャック用誘電体を備えたことを特徴とする静電チャックが提供される。その結果静電チャック誘電体の耐プラズマ性の向上と静電チャックの基本機能の高度な両立を可能とするとともに、安価に製造できるようにした。 According to one aspect of the present invention, an electrostatic chuck including a dielectric made of a fired body of alumina and titanium oxide, wherein the alumina weight percentage is X and the titanium oxide weight percentage is (100-X). Sometimes, X is 99.4 wt% or more, less than 99.8 wt%, bulk density is 3.97 g / cm 3 or more, volume resistivity is 10 8 to 10 11 Ωcm at room temperature , and alumina particles There is provided an electrostatic chuck comprising an electrostatic chuck dielectric having a structure in which titanium oxide is segregated and continuously connected to grain boundaries. As a result, it is possible to improve the plasma resistance of the electrostatic chuck dielectric and the basic functions of the electrostatic chuck at a high level, and to manufacture it at low cost.

体積抵抗率を１０８〜１０１１Ωｃｍにする必要があるのは、静電チャックの吸着力としてジョンセン・ラーベック効果を用いるためである。ジョンセン・ラーベック効果を用いることにより非常に大きな吸着力が発生しその結果として静電チャックの表面に凸部を設けることにより被吸着物との接触面積を吸着面の面積に対して１〜１０％と少なくすることができる。 The reason why the volume resistivity needs to be 10 8 to 10 11 Ωcm is that the Johnsen-Rahbek effect is used as the attractive force of the electrostatic chuck. By using the Johnsen-Rahbek effect, a very large attracting force is generated. As a result, by providing a convex portion on the surface of the electrostatic chuck, the contact area with the object to be attracted is 1 to 10% with respect to the attracting surface And can be reduced.

更に、表面に設けた凸部の高さを５〜１５μｍにすることによって被接触部でも吸着力がはたらかせることができる。その結果凸部の面積を吸着面の面積に対して０．００１％以上０．５％未満にすることができる。被吸着物の温度は凸部の接触面積が小さくなるにつれ接触部を介して伝熱がなされるため、例え凸部の組織がプラズマによる侵食を受けてもその影響は小さくなる。従って、プラズマ耐性をあげることと、被吸着物との接触を極力少なくすることで結果的に経時変化の少ない静電チャックが実現できる。   Further, by making the height of the convex portion provided on the surface 5 to 15 μm, the attracting force can be exerted even in the contacted portion. As a result, the area of the convex portion can be made 0.001% or more and less than 0.5% with respect to the area of the suction surface. Since the temperature of the object to be adsorbed is transferred through the contact portion as the contact area of the convex portion becomes small, even if the structure of the convex portion is eroded by plasma, the influence is small. Therefore, an electrostatic chuck with little change with time can be realized as a result of increasing plasma resistance and minimizing contact with the object to be adsorbed.

また、上記の吸着力の応答特性をよくするためには以下の式の値を小さくする必要がある。
ｔｓ=１．７３１×１０-１１×ρ（εｒ＋ｄ／ｈ） （秒）
ここで、ｔｓは初期の吸着力を１００％としてそれが２％まで崩壊するまでの時間（秒）、ρは誘電層の体積抵抗率（Ωｍ）、εｒは誘電層の比誘電率、ｄは誘電層の厚み（ｍ）、ｈは凸部の高さ（ｍ）である。この式の値が０．００１から０．６でかつ凸部の高さが５〜１５μｍであれば凸部の面積を吸着面に対して０．００１〜０．５％にまですることができかつ吸着力の電圧印加、除荷に対する応答性の良い静電チャックとすることができる。
上記の式は図１の等価回路より解析的に計算し〔数１〕から〔数４〕を導出して得られるものである。ここでｑ１は電荷密度、Ｓは電極面積、Ｃは静電容量、Ｇはコンダクタンス、Ｖは印加電圧、ｔは時間（変数）、Ｔは電圧印加時間である。 Further, in order to improve the response characteristic of the above-described adsorption force, it is necessary to reduce the value of the following expression.
ts = 1.731 × 10 −11 × ρ (εr + d / h) (second)
Here, ts is the time (seconds) until the initial attractive force becomes 100% and collapses to 2%, ρ is the volume resistivity (Ωm) of the dielectric layer, εr is the relative dielectric constant of the dielectric layer, and d is The thickness (m) and h of the dielectric layer are the height (m) of the protrusions. If the value of this formula is 0.001 to 0.6 and the height of the convex portion is 5 to 15 μm, the area of the convex portion can be 0.001 to 0.5% with respect to the adsorption surface. In addition, it is possible to provide an electrostatic chuck with good response to voltage application and unloading of attracting force.
The above equation is obtained analytically from the equivalent circuit of FIG. 1 and derived from [Equation 1] to [Equation 4]. Here, q1 is the charge density, S is the electrode area, C is the capacitance, G is the conductance, V is the applied voltage, t is the time (variable), and T is the voltage application time.

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Figure 0004244229
Figure 0004244229

Figure 0004244229
Figure 0004244229

本発明の好ましい形態においては、１００℃以下の低温で使用される静電チャックとした。   In a preferred embodiment of the present invention, the electrostatic chuck is used at a low temperature of 100 ° C. or lower.

本発明の好ましい形態においては、複数の凸部が形成され被吸着体を該凸部上面に載置する平滑な表面を有する誘電体から構成され、前記複数の凸部上面の合計の面積と前記誘電体表面の面積との比率が０．００１％以上０．５％未満でありかつ凸部の高さが５〜１５μｍであることを特徴とする請求項１乃至４のいずれかに記載の静電チャックを開示した。その結果、被吸着物との接触部分のプラズマによる侵食による表面の荒れの影響による被吸着物への吸着状態の変化の影響を最小限にすることができる。このとき接触面積の比率が０．００１％以下になると凸部１ケあたりの寸法が微細になりすぎ加工が困難になる。また１％より大きくなると被吸着体と接触する凸部の面のプラズマに対する浸食の影響が無視できなくなってくる。   In a preferred embodiment of the present invention, a plurality of convex portions are formed, and the dielectric body has a smooth surface on which the object to be adsorbed is placed on the upper surface of the convex portions. The total area of the upper surfaces of the plurality of convex portions and the 5. The static electricity according to claim 1, wherein the ratio of the area to the surface of the dielectric is 0.001% or more and less than 0.5%, and the height of the convex portion is 5 to 15 μm. An electric chuck has been disclosed. As a result, it is possible to minimize the influence of the change in the adsorption state on the object to be adsorbed due to the influence of surface roughness due to the erosion by the plasma at the contact portion with the object to be adsorbed. At this time, if the ratio of the contact area is 0.001% or less, the size per one convex portion becomes too fine, and the processing becomes difficult. On the other hand, if it exceeds 1%, the influence of erosion on the plasma on the surface of the convex portion that comes into contact with the adsorbed member cannot be ignored.

本発明によれば、プラズマにさらされた後も平滑な面が維持できその結果、シリコンウェハ等の被吸着物に対するパーティクル汚染を抑制でき、かつ被吸着体の吸着、離脱特性の優れ、低温焼成で作製することが容易な静電チャックを製作できるという効果がある。   According to the present invention, a smooth surface can be maintained even after being exposed to plasma. As a result, particle contamination of the adsorbent such as a silicon wafer can be suppressed, and the adsorption and desorption characteristics of the adsorbent are excellent. There is an effect that an electrostatic chuck that can be easily manufactured can be manufactured.

原料としてアルミナ、酸化チタン、その他遷移金属酸化物を表１に示す配合比で造粒した。アルミナは平均粒子径０．１μｍ、純度９９．９９％以上のものを準備した。酸化チタンは、純度９８％以上のものを用いた。   Alumina, titanium oxide, and other transition metal oxides were granulated at the mixing ratio shown in Table 1 as raw materials. Alumina having an average particle diameter of 0.1 μm and a purity of 99.99% or more was prepared. Titanium oxide having a purity of 98% or more was used.

（スラリー調整、造粒、生加工）
上記原料を表１に示す配合比で混合粉砕し、アクリル系バインダーを添加、調整後スプレードライヤーで造粒し顆粒粉を作製した。顆粒粉はゴム型に詰めた後ＣＩＰ（圧力１ｔｏｎ／ｃｍ２）を実施してインゴットを作製し、その後所定の形状に加工し生成形体を作製した。混合にはイオン交換水等を用いなるべく不純物が混入しないようにした。
（焼成）
上記生加工体を窒素、水素ガス還元雰囲気下で焼成した。焼成温度は１１５０〜１３５０℃、焼成時間は１〜８時間とし、もっともかさ密度が高い条件を選択した。このとき脱脂のために加湿ガスを使用している。還元焼成を行うのは酸化チタンの非化学量論組成化をねらい、体積抵抗率の調節をねらうためである。
（ＨＩＰ処理）
さらにＨＩＰ処理をおこなった。ＨＩＰ条件はＡｒガス１５００気圧とし、温度は焼成温度と同一または３０℃下げた温度とした。
（物性測定）
上記ＨＩＰ処理により得られたものは焼成かさ密度、焼成体組織ＳＥＭ観察による平均粒子径測定、体積抵抗率測定、真空中での摩擦力測定、残留時間測定を行った。摩擦力測定および残留時間測定にはセラミックス誘電層の厚みを１ｍｍとした。吸着電圧は２００Ｖ印加とし、さらに残留時間測定には１分間電圧印可後に電源をオフし、残留する摩擦力の減衰を測定した。被吸着物はシリコンウェハミラー面とした。残留時間は電源オフ後摩擦力が２％にまで減衰する時間を残留時間とした。
また、実際にプラズマを照射しセラミックスの表面粗さ（中心線平均粗さＲａ）変化を測定した。初期状態では表面粗さはＲａ０．０５μｍ以下にした。プラズマはリアクティブイオンエッチング装置、エッチングガスはＣＦ４＋Ｏ２で１０００Ｗ、５時間プラズマ放電させた。
また、サンプルの一部につき静電チャックの実用的な吸着力の評価として吸着している被吸着体との間にＨｅガスの圧力を負荷して被吸着体がはがれるときの圧力（POPOFF吸着力）を記録した。このときの吸着電圧は１０００Ｖである。
（比較品）
また比較のため従来の製法によるアルミナセラミックスを例示した。その配合は比較品１が平均粒子径０．５μｍのアルミナ９８ｗｔ％、酸化チタン２ｗｔ％、比較品２がアルミナ９９ｗｔ％、酸化チタン１ｗｔ％で、焼成温度は１５８０℃である。尚、比較品１の表面粗さは初期状態でＲａ０．２３μｍであった。比較品２の表面粗さは初期状態でＲａ０．２μｍであった。比較品はHIP処理はしていない。 (Slurry adjustment, granulation, raw processing)
The above raw materials were mixed and pulverized at a blending ratio shown in Table 1, an acrylic binder was added, and after adjustment, granulated with a spray dryer to prepare granule powder. The granular powder was packed into a rubber mold, and then CIP (pressure 1 ton / cm 2 ) was performed to produce an ingot, which was then processed into a predetermined shape to produce a formed shape. Ion exchange water or the like was used for mixing so that impurities were not mixed as much as possible.
(Baking)
The raw processed body was fired in a nitrogen and hydrogen gas reducing atmosphere. The firing temperature was 1150 to 1350 ° C., the firing time was 1 to 8 hours, and the conditions with the highest bulk density were selected. At this time, humidified gas is used for degreasing. The reduction firing is performed for the purpose of adjusting the volume resistivity with the aim of non-stoichiometric composition of titanium oxide.
(HIP processing)
Further HIP processing was performed. The HIP condition was Ar gas 1500 atm, and the temperature was the same as the firing temperature or a temperature lowered by 30 ° C.
(Physical property measurement)
What was obtained by the HIP treatment was subjected to firing bulk density, average particle diameter measurement by firing body structure SEM observation, volume resistivity measurement, friction force measurement in vacuum, and residual time measurement. For the friction force measurement and the residual time measurement, the thickness of the ceramic dielectric layer was 1 mm. The adsorption voltage was 200 V, and the remaining time was measured by turning off the power after applying the voltage for 1 minute and measuring the attenuation of the remaining frictional force. The object to be adsorbed was a silicon wafer mirror surface. The remaining time was defined as the time for the frictional force to decay to 2% after the power was turned off.
Moreover, plasma was actually irradiated and the change in the surface roughness (centerline average roughness Ra) of the ceramic was measured. In the initial state, the surface roughness was Ra 0.05 μm or less. Plasma was a reactive ion etching apparatus, and etching gas was CF4 + O2 at 1000 W for 5 hours for plasma discharge.
In addition, as an evaluation of the practical adsorption force of the electrostatic chuck for a part of the sample, the pressure when the adsorption object is peeled off by applying the He gas pressure between the adsorption object and the adsorption object (POPOFF adsorption force) ) Was recorded. The adsorption voltage at this time is 1000V.
(Comparative product)
For comparison, alumina ceramics produced by a conventional manufacturing method is illustrated. The compound 1 is 98 wt% alumina and 2 wt% titanium oxide with an average particle size of 0.5 μm, the comparative product 2 is 99 wt% alumina and 1 wt% titanium oxide, and the firing temperature is 1580 ° C. Incidentally, the surface roughness of the comparative product 1 was Ra 0.23 μm in the initial state. The surface roughness of the comparative product 2 was Ra 0.2 μm in the initial state. The comparative product is not HIPed.

上記試験の結果を表１、表２に示す。焼成温度をコントロールすれば酸化チタン０．２ｗｔ％より大きく、０．６ｗｔ％以下の添加量で、かさ密度が３．９７ｇ／ｃｍ３以上で静電チャックとして機能する体積抵抗率が得られることがわかった。従来、粒子径が５０μｍ以上ある場合に添加していた量に比べ非常に少ない添加量で同等の効果が得られることがわかった。従来の製法では焼成温度が１５８０℃と高いために添加した酸化チタンはアルミナと反応してチタン酸アルミニウム（Ａｌ２ＴｉＯ５）等の化合物になっているのに対して、本発明では平均粒子径０．２μｍ未満、純度９９．９％以上の高純度で微粒のアルミナ原料を用いることにより焼成温度が１３００℃以下と低くなっているために、添加した酸化チタンはアルミナと反応せずに酸化チタンのまま存在していることがＸ線回折より確認された。チタン酸アルミニウムは体積抵抗率が比較的高いことが知られており、アルミナの体積抵抗率を下げるためには酸化チタンよりも効率が悪く、より多くの添加量が必要になるものと考えられる。次に、本発明の静電チャック用誘電体の微構造として、焼成温度に対して８０〜１５０℃程度低い温度でサーマルエッチングを行なったサンプルのＳＥＭ写真を図４に示す。平均粒子径２μｍ以下のアルミナ粒子（写真の黒い部分）の粒界に酸化チタン（写真の白い部分）が偏析し連続的につながった構造になっていることがわかった。この酸化チタンが形成するネットワークにより効率的に体積抵抗率を下げることができたものと考えられる。以上の結果より、本発明の静電チャック用誘電体が従来のものと比較して微量の酸化チタンの添加により体積抵抗率を下げることができたのは、添加した酸化チタンがアルミナと反応せずに酸化チタンのまま存在していること、および酸化チタンがアルミナ粒子の粒界に偏析し、連続的につながった構造を形成することによるものである。なお、酸化チタンは還元焼成により非化学量論組成になることで、さらに導電性が良くなっているものと考えられる。このように微量の酸化チタンにより体積抵抗率の制御が可能になり、シリコンウェハ等に対するケミカル汚染も従来に比べ格段に抑制することができたと考えられた。 The results of the above test are shown in Tables 1 and 2. By controlling the firing temperature, it is possible to obtain a volume resistivity that functions as an electrostatic chuck when the bulk density is 3.97 g / cm 3 or more with an addition amount of titanium oxide of 0.2 wt% or more and 0.6 wt% or less. all right. Conventionally, it has been found that the same effect can be obtained with a very small amount of addition compared to the amount added conventionally when the particle diameter is 50 μm or more. In the conventional manufacturing method, since the firing temperature is as high as 1580 ° C., the added titanium oxide reacts with alumina to become a compound such as aluminum titanate (Al 2 TiO 5), whereas in the present invention, the average particle size is 0.2 μm. Since the firing temperature is as low as 1300 ° C. or less by using a high-purity alumina raw material with a purity of 99.9% or more, the added titanium oxide does not react with alumina and remains as titanium oxide This was confirmed by X-ray diffraction. Aluminum titanate is known to have a relatively high volume resistivity, and in order to reduce the volume resistivity of alumina, it is considered that the efficiency is lower than that of titanium oxide, and a larger amount of addition is required. Next, FIG. 4 shows an SEM photograph of a sample subjected to thermal etching at a temperature lower by about 80 to 150 ° C. than the firing temperature as the microstructure of the dielectric for electrostatic chuck of the present invention. It was found that titanium oxide (white portion in the photograph) segregated and continuously connected to the grain boundaries of alumina particles (black portion in the photograph) having an average particle diameter of 2 μm or less. It is considered that the volume resistivity can be efficiently lowered by the network formed by the titanium oxide. From the above results, the dielectric constant for the electrostatic chuck of the present invention was able to lower the volume resistivity by adding a small amount of titanium oxide compared to the conventional one. The added titanium oxide reacted with alumina. This is because the titanium oxide remains as it is, and the titanium oxide segregates at the grain boundaries of the alumina particles to form a continuously connected structure. In addition, it is thought that titanium oxide is further improved in conductivity by becoming non-stoichiometric composition by reduction firing. Thus, it was considered that the volume resistivity could be controlled by a small amount of titanium oxide, and chemical contamination on silicon wafers and the like could be remarkably suppressed as compared with the conventional case.

Figure 0004244229
Figure 0004244229

Figure 0004244229
電気特性の評価の結果、酸化チタン単独または酸化チタン＋遷移金属酸化物の添加割合によって１０８〜１０１６Ωｃｍの広範囲で制御できることがわかった。
Figure 0004244229
 As a result of the evaluation of electrical characteristics, it was found that control was possible over a wide range of 10 8 to 10 16 Ωcm depending on the addition ratio of titanium oxide alone or titanium oxide + transition metal oxide.

レジストを使用する場合には、その耐熱温度を考えると、静電チャックは１００℃以下で使用されるのが望ましい。
静電チャック用の誘電体に要求される電気特性は、静電チャックを使用する温度において体積抵抗率が１０８〜１０１１Ωｃｍが望ましい。下限値の１０８Ωｃｍ未満ではウェハへ流れ込む電流が過大になりすぎデバイスの損傷のおそれがあり、上限値の１０１１Ωｃｍより大きいと、ウェハの吸着、脱離の電圧印加に対するレスポンスが低下する。
例えば１００℃以下のプロセスエッチングのようなプロセスでは下限値が１０９〜１０１１Ωｃｍ程度であることが望ましい。 In the case of using a resist, it is desirable that the electrostatic chuck is used at 100 ° C. or lower in view of its heat resistant temperature.
The electrical characteristics required for the dielectric material for the electrostatic chuck are desirably 10 8 to 10 11 Ωcm in volume resistivity at the temperature at which the electrostatic chuck is used. If it is less than 10 8 [Omega] cm in the lower limit may cause damage to the device too excessive current flowing into the wafer, and 10 11 [Omega] cm larger than the upper limit, the adsorption of the wafer, response to voltage application of desorption decreases.
For example, in a process such as process etching at 100 ° C. or lower, the lower limit value is desirably about 10 9 to 10 11 Ωcm.

酸化チタンが０．６ｗｔ％より多いと体積抵抗率が１０８Ωｃｍ未満となり、ウェハへ流れ込む電流が過大になりすぎデバイスの損傷のおそれがある。また、０．２ｗｔ％以下だと酸化チタン添加による体積抵抗率の低下の効果が小さくなる。 If the amount of titanium oxide is more than 0.6 wt%, the volume resistivity becomes less than 10 8 Ωcm, the current flowing into the wafer becomes excessive, and the device may be damaged. On the other hand, if it is 0.2 wt% or less, the effect of lowering the volume resistivity by adding titanium oxide becomes small.

耐プラズマ性はプラズマ中のイオンのエネルギーが過大であればどのような物質であってもエッチングされてしまうため表面粗さの変化で評価した。
その結果、本発明によるセラミック誘電体は表面粗さの変化が従来のものに比べ顕著に小さかった。このことは発塵するパーティクルの大きさが小さいことと推定された。 Plasma resistance was evaluated by the change in surface roughness because any material is etched if the energy of ions in the plasma is excessive.
As a result, the change in surface roughness of the ceramic dielectric according to the present invention was significantly smaller than that of the conventional one. This is presumed that the size of particles that generate dust is small.

複数の凸部が形成され被吸着体を該凸部上面に載置する平滑な表面を有し、体積抵抗率が１０９．３Ωｃｍである静電チャック用誘電体を含む静電チャックの凸部上面の合計の面積と前記誘電体表面の面積との比率が０．０８９％である静電チャックを作製した。このとき表面にはφ０．２５ｍｍの凸部を一辺が８ｍｍの正三角形の各頂点に連続して配置
している。凸部の高さは１０μｍである。 Convex of an electrostatic chuck having a smooth surface on which a plurality of convex portions are formed and an object to be adsorbed is placed on the upper surface of the convex portion, and including a dielectric for electrostatic chuck having a volume resistivity of 109.3 Ωcm An electrostatic chuck was produced in which the ratio of the total area of the upper surface of the part and the area of the dielectric surface was 0.089%. At this time, convex portions having a diameter of 0.25 mm are continuously arranged on the surface of each apex of a regular triangle having a side of 8 mm. The height of the convex portion is 10 μm.

その結果、プラズマ照射後の表面粗さの変化が少なかったことおよび、被吸着物との接触面積が非常に少ないことが重畳し、被吸着物であるシリコンウェハのプロセス時の温度変化の経時変化がきわめて少なくすることができた。   As a result, the change in temperature during processing of the silicon wafer that is the object to be adsorbed overlaps with the fact that the change in surface roughness after plasma irradiation is small and the contact area with the object to be adsorbed is very small. Could be very little.

POPOFF吸着力は全てのサンプルにおいて１００ｔｏｒｒ以上を記録した。すなわちシリコンウェハ等の被吸着体を吸着するには十分に実用的な力が得られていることがわかった。
The POPOFF adsorption force was recorded at 100 torr or more in all samples. That is, it has been found that a practical force sufficient for adsorbing an adsorbent such as a silicon wafer is obtained.

本発明の静電チャックを表す図である。It is a figure showing the electrostatic chuck of this invention. 本発明の静電チャックの等価回路を表す図である。It is a figure showing the equivalent circuit of the electrostatic chuck of this invention. 本発明の静電チャックの表面パターンの拡大図である。It is an enlarged view of the surface pattern of the electrostatic chuck of this invention. 本発明の静電チャック用誘電体の構造を示す電子顕微鏡写真である。It is an electron micrograph which shows the structure of the dielectric material for electrostatic chucks of this invention.

符号の説明Explanation of symbols

１…凸部
２…凸部底面
３…ガス供給孔
４…リング状凸部（シールリング）
５…凹部（ガス拡散用溝）
６…電極
７…誘電層
８…被吸着体
９…電気的接続手段
１０…基盤
１１…電源


DESCRIPTION OF SYMBOLS 1 ... Convex part 2 ... Convex part bottom face 3 ... Gas supply hole 4 ... Ring-shaped convex part (seal ring)
5. Recessed part (gas diffusion groove)
6 ... Electrode 7 ... Dielectric layer 8 ... Adsorbed body 9 ... Electrical connection means 10 ... Base 11 ... Power source


Claims (4)

アルミナと酸化チタンの焼成体からなる誘電体を備えた静電チャックであって、
アルミナの重量パーセントをＸ、酸化チタンの重量パーセントを（１００−Ｘ）としたときに、Ｘが９９．４ｗｔ％以上であり９９．８ｗｔ％よりも小さく、かさ密度が３．９７ｇ／ｃｍ ３ 以上であり、体積抵抗率が室温において１０８〜１０１１Ωｃｍ、かつアルミナ粒子の粒界に酸化チタンが偏析し連続的につながった構造の静電チャック用誘電体を備えたことを特徴とする静電チャック。 An electrostatic chuck including a dielectric made of a sintered body of alumina and titanium oxide,
When the weight percentage of alumina is X and the weight percentage of titanium oxide is (100-X), X is 99.4 wt% or more and smaller than 99.8 wt%, and the bulk density is 3.97 g / cm 3 or more. And a dielectric for electrostatic chuck having a volume resistivity of 10 8 to 10 11 Ωcm at room temperature and a structure in which titanium oxide is segregated and continuously connected to grain boundaries of alumina particles. Electric chuck. 前記アルミナ粒子の粒内および粒界にチタン酸アルミニウム（Ａｌ２ＴｉＯ５）が存在しないことを特徴とする請求項１に記載の静電チャック。 2. The electrostatic chuck according to claim 1, wherein aluminum titanate (Al 2 TiO 5 ) does not exist in the grains and the grain boundaries of the alumina particles. 請求項１または２に記載の静電チャックであって、１００℃以下の低温で使用されることを特徴とする静電チャック。 The electrostatic chuck according to claim 1 , wherein the electrostatic chuck is used at a low temperature of 100 ° C. or less. 複数の凸部が形成され被吸着体を該凸部上面に載置する平滑な表面を有する誘電体から構成され、前記複数の凸部上面の合計の面積と前記誘電体表面の面積との比率が０．００１％以上０．５％未満でありかつ凸部の高さが５〜１５μｍであることを特徴とする請求項１乃至３のいずれかに記載の静電チャック。 A ratio of the total area of the top surfaces of the plurality of convex portions to the area of the dielectric surface, which is composed of a dielectric having a smooth surface on which a plurality of convex portions are formed and the object to be adsorbed is placed on the top surface of the convex portions The electrostatic chuck according to any one of claims 1 to 3 , wherein the height is 0.001% or more and less than 0.5%, and the height of the convex portion is 5 to 15 µm.
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JP2009004752A (en) * 2007-05-18 2009-01-08 Toto Ltd Electrostatic chuck
JP4786693B2 (en) 2008-09-30 2011-10-05 三菱重工業株式会社 Wafer bonding apparatus and wafer bonding method
JP5872998B2 (en) 2012-04-26 2016-03-01 日本特殊陶業株式会社 Alumina sintered body, member comprising the same, and semiconductor manufacturing apparatus
KR102119867B1 (en) * 2013-10-21 2020-06-09 주식회사 미코세라믹스 Electrostatic chuck
CN107663080B (en) * 2016-07-27 2020-05-08 北京华卓精科科技股份有限公司 Alumina ceramic applied to J-R type electrostatic chuck and preparation method thereof

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JPH03204924A (en) * 1989-10-30 1991-09-06 Sumitomo Metal Ind Ltd Specimen holder
JPH09330974A (en) * 1996-06-12 1997-12-22 Hitachi Ltd Electrostatic chuck electrode
JP4201502B2 (en) * 2000-10-11 2008-12-24 独立行政法人産業技術総合研究所 Electrostatic chuck and manufacturing method thereof
US6483690B1 (en) * 2001-06-28 2002-11-19 Lam Research Corporation Ceramic electrostatic chuck assembly and method of making
JP2004352572A (en) * 2003-05-29 2004-12-16 Kyocera Corp Alumina ceramics and method for producing the same
TWI274394B (en) * 2003-11-14 2007-02-21 Advanced Display Proc Eng Co Electrostatic chuck with support balls as contact plane, substrate support, clamp for substrate fixation, and electrode structure, and fabrication method thereof
JP4722463B2 (en) * 2004-12-03 2011-07-13 黒崎播磨株式会社 Dielectric ceramics for electrostatic chuck and manufacturing method thereof

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CN101379607B (en) 2010-04-21
WO2007091619A1 (en) 2007-08-16

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