JP4242353B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP4242353B2 JP4242353B2 JP2005001038A JP2005001038A JP4242353B2 JP 4242353 B2 JP4242353 B2 JP 4242353B2 JP 2005001038 A JP2005001038 A JP 2005001038A JP 2005001038 A JP2005001038 A JP 2005001038A JP 4242353 B2 JP4242353 B2 JP 4242353B2
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- 239000004065 semiconductor Substances 0.000 title claims description 52
- 230000015572 biosynthetic process Effects 0.000 claims description 22
- 238000009792 diffusion process Methods 0.000 claims description 13
- 239000003990 capacitor Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 238000002955 isolation Methods 0.000 claims description 5
- 230000015556 catabolic process Effects 0.000 description 22
- 239000010410 layer Substances 0.000 description 8
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- 238000010586 diagram Methods 0.000 description 4
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- 230000035945 sensitivity Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
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- 239000011241 protective layer Substances 0.000 description 1
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- A—HUMAN NECESSITIES
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- A23L13/00—Meat products; Meat meal; Preparation or treatment thereof
- A23L13/60—Comminuted or emulsified meat products, e.g. sausages; Reformed meat from comminuted meat product
- A23L13/67—Reformed meat products other than sausages
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
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- H01L29/73—Bipolar junction transistors
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- A23P—SHAPING OR WORKING OF FOODSTUFFS, NOT FULLY COVERED BY A SINGLE OTHER SUBCLASS
- A23P30/00—Shaping or working of foodstuffs characterised by the process or apparatus
- A23P30/20—Extruding
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- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
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- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0635—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
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- A—HUMAN NECESSITIES
- A23—FOODS OR FOODSTUFFS; TREATMENT THEREOF, NOT COVERED BY OTHER CLASSES
- A23V—INDEXING SCHEME RELATING TO FOODS, FOODSTUFFS OR NON-ALCOHOLIC BEVERAGES AND LACTIC OR PROPIONIC ACID BACTERIA USED IN FOODSTUFFS OR FOOD PREPARATION
- A23V2002/00—Food compositions, function of food ingredients or processes for food or foodstuffs
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- A—HUMAN NECESSITIES
- A23—FOODS OR FOODSTUFFS; TREATMENT THEREOF, NOT COVERED BY OTHER CLASSES
- A23V—INDEXING SCHEME RELATING TO FOODS, FOODSTUFFS OR NON-ALCOHOLIC BEVERAGES AND LACTIC OR PROPIONIC ACID BACTERIA USED IN FOODSTUFFS OR FOOD PREPARATION
- A23V2300/00—Processes
- A23V2300/16—Extrusion
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- A—HUMAN NECESSITIES
- A23—FOODS OR FOODSTUFFS; TREATMENT THEREOF, NOT COVERED BY OTHER CLASSES
- A23V—INDEXING SCHEME RELATING TO FOODS, FOODSTUFFS OR NON-ALCOHOLIC BEVERAGES AND LACTIC OR PROPIONIC ACID BACTERIA USED IN FOODSTUFFS OR FOOD PREPARATION
- A23V2300/00—Processes
- A23V2300/24—Heat, thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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Description
スキャンドライバ103は、PDP101の走査電極Yの各電位を個別に変化させる。特に、走査パルス電圧を走査電極Yに対して所定の順番で印加する。
サステインドライバ102は、高い出力電圧レベルが要求されることから、高耐圧素子を用いて回路が構成される。また、回路の電源効率を高めるために、出力電圧波形がハイレベルの時のみ回路動作が有効に機能するように、出力振幅を制御回路の電源ラインに帰還するブートストラップ回路を採用することが多い。
ここで、サステインドライバ102は集積化した半導体装置で構成されており、電源端子VCC、接地端子GND、高電位側電源端子VB、出力端子HO、および低電位側端子VSなどは半導体装置の外部端子であって、入力回路1、レベルシフト回路2、受信回路3、基準電圧回路20、保護回路7および出力回路18が半導体装置内に集積化されている。
図5において出力MOSトランジスタ37がオンしている間は、低電圧側電源VCCからダイオード38のVF≒0.7ボルトだけ低下した電圧が容量39に供給される。出力MOSトランジスタ36がオンしている間はVS端子がほぼHV電圧まで上昇し、高電圧電源VBは“VS+VCC−0.7”ボルトとなる。出力MOSトランジスタ36,37のオン時間、容量39の容量値によって高電圧電源VBは変動する。
図5では、MOSトランジスタ22と抵抗21の直列回路によって構成する簡単な基準電圧回路20を用いており、基準電圧VrefがMOSトランジスタ22の閾値電圧Vtに依存する。MOSトランジスタ22の閾値電圧Vtの大きさは、MOSトランジスタの製造ばらつきによって異なったり、固有の温度特性を有していたりしている。そのことが、半導体装置毎に保護回路7の検出感度が異なったり、周囲温度によって検出感度が変動したりする原因となり、半導体装置の回路動作を保証しにくい、という問題がある。
(実施の形態1)
図1と図2は本発明の(実施の形態1)を示す。
図1に示すサステインドライバは、入力回路1とレベルシフト回路2は、電源端子VCCと接地端子GNDとの間に印加される電源電圧により動作する。
入力回路1を介して入力される入力信号INは、レベルシフト回路2を介して高耐圧フローティングブロック19内の受信回路3に入力され、その受信回路3の出力信号によって、出力回路18が駆動され、高電圧の出力信号を出力端子HOから出力する。
また、基準電圧回路17は、NPNバイポーラトランジスタ10,12のコレクタを高耐圧フローティングブロック19の高電位側電源端子VBに接続して回路構成されることから、NPNバイポーラトランジスタ10,12のトランジスタ活性領域を高耐圧フローティングブロック19の素子形成領域26内にその他の半導体素子と一緒に形成することが可能になる。
次に、電源電圧が低下した時に作動する保護回路を有した半導体装置について説明する。
次に、過熱保護回路を有した半導体装置について、図3を用いて説明する。
図3は本発明の(実施の形態3)を示す回路構成であり、受信回路3、基準電圧回路17、過電圧保護用の保護回路7および出力回路18に関する説明は省略する。
VS 低電位側電源端子
102 サステインドライバ
3 受信回路
4 コンパレータ
5 抵抗(第4の抵抗)
6 抵抗(第5の抵抗)
7 保護回路
8 差動増幅器
9 抵抗(第1の抵抗)
10 NPNバイポーラトランジスタ(第1のバイポーラトランジスタ)
11 抵抗(第2の抵抗)
12 NPNバイポーラトランジスタ(第2のバイポーラトランジスタ)
13 NチャンネルMOSトランジスタ
14 抵抗(第3の抵抗)
15 NチャンネルMOSトランジスタ
16 PチャンネルMOSトランジスタ
17 基準電圧回路
18 出力回路(信号処理回路)
19 高耐圧フローティングブロック
20 基準電圧回路
24 トランジスタ活性領域
25a,25b,25c ガードリング
26 素子形成領域
27 分離拡散領域
28a,28b,28c ガードリング
30 コンパレータ(第2のコンパレータ)
31 NPNバイポーラトランジスタ(第3のバイポーラトランジスタ)
32 定電流源
33,34 抵抗
36,37 出力MOSトランジスタ
Claims (4)
- 低電位から高電位まで変動する電源電圧が印加される高電位側電源端子と、
半導体基板上に形成された半導体層を分離拡散領域で包囲して島状に構成され、その島の電位が前記高電位側電源端子の電圧でバイアスされたフローティングブロックと、
低電位側電源端子にソースが接続され前記高電位側電源端子とドレインとの間に基準電圧を出力するMOSトランジスタと、
コレクタとベースを共に前記高電位側電源端子に接続した第1および第2のバイポーラトランジスタと、
前記第1のバイポーラトランジスタのエミッタと前記MOSトランジスタのドレインとの間に接続された第1の抵抗と、
前記第2のバイポーラトランジスタのエミッタと前記MOSトランジスタのドレインとの間に直列接続された第2,第3の抵抗と、
前記第2,第3の抵抗の中間接続点と、前記第1のバイポーラトランジスタのエミッタ電位とを比較して前記MOSトランジスタの導通を制御する差動増幅器とを備え、
前記第1,第2のバイポーラトランジスタのトランジスタ活性領域、前記MOSトランジスタ、前記第1〜第3の抵抗および、前記差動増幅器を、前記フローティングブロック内に形成していることを特徴とする半導体装置。 - 前記フローティングブロックは、その中央部を素子形成領域とし、前記素子形成領域の外側を包囲するようにガードリングを形成しており、前記素子形成領域内に前記第1,第2のバイポーラトランジスタ、前記MOSトランジスタおよび、前記第1〜第3の抵抗を形成していることを特徴とする
請求項1記載の半導体装置。 - 前記低電位側電源端子と前記高電位側電源端子との間に直列接続された第4,第5の抵抗と、
前記MOSトランジスタのドレイン電位と前記第4,第5の抵抗による中間接続点の電位とを比較するコンパレータとを前記フローティングブロック内に形成して備え、
前記コンパレータの出力により前記フローティングブロック内の素子形成領域に集積化された信号処理回路の出力信号を停止させることを特徴とする
請求項1または請求項2記載の半導体装置。 - 定電流源がエミッタに接続され前記高電位側電源端子にコレクタとベースが接続された第3のバイポーラトランジスタと、
前記第3のバイポーラトランジスタのベース・エミッタ間電圧と前記基準電圧を基にした所定の電圧とを比較する第2のコンパレータとを前記フローティングブロック内に形成して備え、
前記第2のコンパレータの出力により前記フローティングブロック内の素子形成領域に集積化された信号処理回路の出力信号を停止させることを特徴とする
請求項1記載の半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005001038A JP4242353B2 (ja) | 2004-02-04 | 2005-01-06 | 半導体装置 |
KR1020050010257A KR20060041675A (ko) | 2004-02-04 | 2005-02-03 | 반도체 장치 |
US11/048,732 US7129779B2 (en) | 2004-02-04 | 2005-02-03 | Semiconductor device with floating block |
EP05002280A EP1562166A2 (en) | 2004-02-04 | 2005-02-03 | Semiconductor device |
CNB2005100091548A CN100401353C (zh) | 2004-02-04 | 2005-02-04 | 半导体装置 |
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JP2004027419 | 2004-02-04 | ||
JP2005001038A JP4242353B2 (ja) | 2004-02-04 | 2005-01-06 | 半導体装置 |
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JP2005252235A JP2005252235A (ja) | 2005-09-15 |
JP4242353B2 true JP4242353B2 (ja) | 2009-03-25 |
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JP2005001038A Expired - Fee Related JP4242353B2 (ja) | 2004-02-04 | 2005-01-06 | 半導体装置 |
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US (1) | US7129779B2 (ja) |
EP (1) | EP1562166A2 (ja) |
JP (1) | JP4242353B2 (ja) |
KR (1) | KR20060041675A (ja) |
CN (1) | CN100401353C (ja) |
Families Citing this family (12)
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US20060064071A1 (en) * | 2001-11-06 | 2006-03-23 | Possis Medical, Inc. | Gas inflation/evacuation system incorporating a reservoir and removably attached sealing system for a guidewire assembly having an occlusive device |
US7183626B2 (en) * | 2004-11-17 | 2007-02-27 | International Rectifier Corporation | Passivation structure with voltage equalizing loops |
WO2006058216A2 (en) * | 2004-11-24 | 2006-06-01 | Microsemi Corporation | Junction terminations structures for wide-bandgap power devices |
CN1987710B (zh) * | 2005-12-23 | 2010-05-05 | 深圳市芯海科技有限公司 | 一种电压调整装置 |
EP2581938B1 (en) * | 2011-03-15 | 2020-01-08 | Fuji Electric Co. Ltd. | High-voltage integrated circuit device |
US8587071B2 (en) * | 2012-04-23 | 2013-11-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electrostatic discharge (ESD) guard ring protective structure |
US9171738B2 (en) | 2012-12-18 | 2015-10-27 | Infineon Technologies Austria Ag | Systems and methods for integrating bootstrap circuit elements in power transistors and other devices |
US9450044B2 (en) * | 2014-08-20 | 2016-09-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Guard ring structure and method of forming the same |
JP6692323B2 (ja) * | 2017-06-12 | 2020-05-13 | 三菱電機株式会社 | 半導体装置 |
CN109712972B (zh) * | 2017-10-26 | 2024-06-04 | 上海维安电子股份有限公司 | 一种过压保护芯片的版图结构 |
EP3767828B1 (en) * | 2018-04-18 | 2022-09-21 | Mitsubishi Electric Corporation | Polyphase filter |
JP7148481B2 (ja) * | 2019-12-04 | 2022-10-05 | エルジー ディスプレイ カンパニー リミテッド | 表示装置 |
Family Cites Families (4)
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JP3050167B2 (ja) * | 1997-06-02 | 2000-06-12 | 日本電気株式会社 | 半導体装置の駆動方法及び駆動回路 |
JP3309905B2 (ja) | 1999-03-05 | 2002-07-29 | サンケン電気株式会社 | 電界効果トランジスタを含む半導体装置 |
JP3533518B2 (ja) * | 2000-02-25 | 2004-05-31 | 株式会社日立製作所 | ドライバicモジュール |
JP3783156B2 (ja) * | 2001-10-17 | 2006-06-07 | 株式会社日立製作所 | 半導体装置 |
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2005
- 2005-01-06 JP JP2005001038A patent/JP4242353B2/ja not_active Expired - Fee Related
- 2005-02-03 KR KR1020050010257A patent/KR20060041675A/ko not_active Application Discontinuation
- 2005-02-03 EP EP05002280A patent/EP1562166A2/en not_active Withdrawn
- 2005-02-03 US US11/048,732 patent/US7129779B2/en not_active Expired - Fee Related
- 2005-02-04 CN CNB2005100091548A patent/CN100401353C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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CN1652179A (zh) | 2005-08-10 |
KR20060041675A (ko) | 2006-05-12 |
JP2005252235A (ja) | 2005-09-15 |
CN100401353C (zh) | 2008-07-09 |
US7129779B2 (en) | 2006-10-31 |
US20050189603A1 (en) | 2005-09-01 |
EP1562166A2 (en) | 2005-08-10 |
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