JP4220509B2 - 半導体装置の製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 58
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 239000000758 substrate Substances 0.000 claims description 44
- 229910052760 oxygen Inorganic materials 0.000 claims description 42
- 239000001301 oxygen Substances 0.000 claims description 41
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 40
- 229910052739 hydrogen Inorganic materials 0.000 claims description 33
- 239000001257 hydrogen Substances 0.000 claims description 33
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 31
- 229910052707 ruthenium Inorganic materials 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 29
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 28
- 230000004888 barrier function Effects 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 238000000137 annealing Methods 0.000 claims description 9
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 8
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 8
- 229910052741 iridium Inorganic materials 0.000 claims description 5
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 3
- 229910018516 Al—O Inorganic materials 0.000 claims description 2
- 229910018514 Al—O—N Inorganic materials 0.000 claims description 2
- 229910018557 Si O Inorganic materials 0.000 claims description 2
- 229910006360 Si—O—N Inorganic materials 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 2
- 239000007769 metal material Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052735 hafnium Inorganic materials 0.000 description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical group [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
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Description
(a)前記半導体基板の主面にゲート絶縁膜を形成する工程と、
(b)前記ゲート絶縁膜上に金属膜を形成した後、前記金属膜をパターニングすることによって、前記第1領域の前記ゲート絶縁膜上に前記第1ゲート電極を形成し、前記第2領域の前記ゲート絶縁膜上に前記第2ゲート電極を形成する工程と、
(c)前記工程(b)の後、酸素を含む雰囲気中で前記半導体基板をアニールすることにより、前記第1および第2ゲート電極中に前記酸素を導入する工程と、
(d)前記工程(b)の後、前記第1領域に、前記nチャネル型MISトランジスタのソース領域およびドレイン領域を形成する工程と、
(e)前記工程(b)の後、前記第2領域に、前記pチャネル型MISトランジスタのソース領域およびドレイン領域を形成する工程と、
(f)前記工程(c)〜(e)の後、前記第1および第2領域に、前記第1および第2ゲート電極を覆うように水素バリア膜を形成する工程と、
(g)前記第2領域上の前記水素バリア膜を残すように、前記第1領域の前記水素バリア膜を選択的に除去することにより、前記第2ゲート電極の周囲を前記水素バリア膜で覆う工程と、
(h)前記工程(g)の後、前記第2ゲート電極が前記水素バリア膜で覆われた状態で、水素を含む雰囲気中で前記半導体基板をアニールすることにより、前記第1ゲート電極中の酸素濃度を前記第2ゲート電極中の酸素濃度よりも低くする工程と、
(i)前記工程(h)の後、前記第1および第2領域上に絶縁膜を形成する工程と、
(j)前記工程(i)の後、前記絶縁膜中および前記水素バリア膜中に、前記nチャネル型MISトランジスタおよび前記pチャネル型MISトランジスタのそれぞれの前記ソース領域および前記ドレイン領域に接続するコンタクトホールを形成する工程。
本実施の形態によるnチャネル型MISトランジスタおよびpチャネル型MISトランジスタの製造方法を、図1〜図10を用いて工程順に説明する。
本実施の形態によるnチャネル型MISトランジスタ(Qn)およびpチャネル型MISトランジスタ(Qp)の製造方法を、図11〜図14を用いて工程順に説明する。
2 素子分離溝
3 p型ウエル
4 n型ウエル
5 ゲート絶縁膜
6、6A、6B ゲート電極
8 n−型半導体領域
9 p−型半導体領域
10 サイドウォールスペーサ
11 n+型半導体領域(ソース、ドレイン)
12 p+型半導体領域(ソース、ドレイン)
13 水素バリア膜
14 酸化シリコン膜
16 コンタクトホール
17 プラグ
18 メタル配線
20 フォトレジスト膜
Qn nチャネル型MISトランジスタ
Qp pチャネル型MISトランジスタ
Claims (7)
- 半導体基板の主面の第1領域に第1ゲート電極を有するnチャネル型MISトランジスタを形成し、
前記主面の第2領域に、前記第1ゲート電極よりも仕事関数の大きい第2ゲート電極を有するpチャネル型MISトランジスタを形成する半導体装置の製造方法であって、
(a)前記半導体基板の主面にゲート絶縁膜を形成する工程と、
(b)前記ゲート絶縁膜上に金属膜を形成した後、前記金属膜をパターニングすることによって、前記第1領域の前記ゲート絶縁膜上に前記第1ゲート電極を形成し、前記第2領域の前記ゲート絶縁膜上に前記第2ゲート電極を形成する工程と、
(c)前記工程(b)の後、酸素を含む雰囲気中で前記半導体基板をアニールすることにより、前記第1および第2ゲート電極中に前記酸素を導入する工程と、
(d)前記工程(b)の後、前記第1領域に、前記nチャネル型MISトランジスタのソース領域およびドレイン領域を形成する工程と、
(e)前記工程(b)の後、前記第2領域に、前記pチャネル型MISトランジスタのソース領域およびドレイン領域を形成する工程と、
(f)前記工程(c)〜(e)の後、前記第1および第2領域に、前記第1および第2ゲート電極を覆うように水素バリア膜を形成する工程と、
(g)前記第2領域上の前記水素バリア膜を残すように、前記第1領域の前記水素バリア膜を選択的に除去することにより、前記第2ゲート電極の周囲を前記水素バリア膜で覆う工程と、
(h)前記工程(g)の後、前記第2ゲート電極が前記水素バリア膜で覆われた状態で、水素を含む雰囲気中で前記半導体基板をアニールすることにより、前記第1ゲート電極中の酸素濃度を前記第2ゲート電極中の酸素濃度よりも低くする工程と、
(i)前記工程(h)の後、前記第1および第2領域上に絶縁膜を形成する工程と、
(j)前記工程(i)の後、前記絶縁膜中および前記水素バリア膜中に、前記nチャネル型MISトランジスタおよび前記pチャネル型MISトランジスタのそれぞれの前記ソース領域および前記ドレイン領域に接続するコンタクトホールを形成する工程と、
を有する半導体装置の製造方法。 - 前記金属膜は、ルテニウム膜であることを特徴とする請求項1記載の半導体装置の製造方法。
- 前記第1ゲート電極を構成するルテニウム中の酸素濃度は、1×1018/cm3以下であり、前記第2ゲート電極を構成するルテニウム中の酸素濃度は、1×1019/cm3以上であることを特徴とする請求項1または2記載の半導体装置の製造方法。
- 前記金属膜は、イリジウム膜であることを特徴とする請求項1記載の半導体装置の製造方法。
- 前記ゲート絶縁膜は、Hf-O、Hf-Si-O、Hf-Si-O-N、Hf-Al-OおよびHf-Al-O-Nからなる群より選択された少なくとも一種のハフニウム酸化物を主体として含むことを特徴とする請求項1〜4のいずれか1項に記載の半導体装置の製造方法。
- 前記工程(a)における前記ゲート絶縁膜を形成する工程は、
(a1)前記半導体基板上に酸化シリコン膜または酸窒化シリコン膜を形成する工程と、
(a2)前記工程(a1)の後、前記酸化シリコン膜上または前記酸窒化シリコン膜上に前記ハフニウム酸化物を形成する工程と、
を有することを特徴とする請求項5記載の半導体装置の製造方法。 - 前記水素バリア膜は、アルミナ膜からなることを特徴とする請求項1〜6のいずれか1項に記載の半導体装置の製造方法。
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