JP4216739B2 - Electrical property value measuring method and measuring jig - Google Patents
Electrical property value measuring method and measuring jig Download PDFInfo
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Description
本発明は誘電体材料の電気的物性値の測定方法及び測定用冶具に関するものであり、特にミリ波領域で電子部品又は回路基板として使用する誘電体材料の誘電率、誘電正接などを測定するための電気的物性値測定方法及び測定用冶具に関するものである。 The present invention relates to a method for measuring electrical properties of a dielectric material and a measuring jig, and in particular for measuring the dielectric constant, dielectric loss tangent, etc. of a dielectric material used as an electronic component or circuit board in the millimeter wave region. The electrical property value measuring method and the measuring jig are described.
従来から、３０ＧＨｚ以上のミリ波帯における誘電体基板の誘電定数測定法としてはファブリぺロ共振器法が知られている。このファブリぺロ共振器法では、試料の形状として１辺７５ｍｍ以上の角板、或いは直径７５ｍｍ以上の円板が望ましく、このため大型の試料が必要となるので、電子部品や回路基板に用いる誘電体基板にこの方法を適用することは困難であった。 Conventionally, the Fabry-Perot resonator method is known as a method for measuring the dielectric constant of a dielectric substrate in a millimeter wave band of 30 GHz or higher. In this Fabry-Perot resonator method, a square plate with a side of 75 mm or more or a disk with a diameter of 75 mm or more is desirable as the shape of the sample. For this reason, a large sample is required, so that the dielectric used for electronic components and circuit boards is used. It has been difficult to apply this method to a body substrate.
これに対して、近年、ミリ波帯における誘電体基板の誘電定数測定法として、遮断円筒導波管法が提案されている。
この方法は、２個の円筒導波管の間に誘電体基板を配置して共振器構造を構成し、ＴＥ0m1（ｍ＝１、２・・・）モードの共振周波数と無負荷Ｑを測定し、該共振周波数と無負荷Ｑから誘電体基板の誘電率と誘電正接を計算する方法である。
On the other hand, in recent years, a blocking cylindrical waveguide method has been proposed as a method for measuring the dielectric constant of a dielectric substrate in the millimeter wave band.
In this method, a dielectric substrate is arranged between two cylindrical waveguides to form a resonator structure, and the resonance frequency and unloaded Q of the TE 0m1 (m = 1, 2,...) Mode are measured. In this method, the dielectric constant and dielectric loss tangent of the dielectric substrate are calculated from the resonance frequency and no load Q.
また、誘電正接の計算のために必要な遮断円筒内壁の比導電率測定は、試料を挟まない状態で行われ、遮断円筒の両端に短絡導体板を配置して構成した空洞共振器のＴＥ0m1（ｍ＝１、２・・・）モードの共振周波数と無負荷Ｑの測定から比導電率が決定される。なお通常、空洞共振器の共振周波数が測定したい周波数帯になるように共振器寸法を設計する。 Further, the specific conductivity measurement of the inner wall of the cutoff cylinder necessary for calculation of the dielectric loss tangent is performed without sandwiching the sample, and TE 0m1 of the cavity resonator configured by arranging the short-circuit conductor plates at both ends of the cutoff cylinder. The specific conductivity is determined from the measurement of the resonance frequency of the (m = 1, 2,...) Mode and the no-load Q. Normally, the resonator dimensions are designed so that the resonance frequency of the cavity resonator is in the frequency band to be measured.
このような遮断円筒導波管法では、比較的作製が容易な１辺３０ｍｍ以下の角板形状、あるいは直径３０ｍｍ以下の円板形状の試料を用いて測定できるため、ミリ波帯における誘電定数測定法として用いられている。
しかしながら、遮断円筒導波管法では、測定試料である誘電体基板の誘電率や厚さによってＴＥ0m1（ｍ＝１、２・・・）モードの共振周波数が、試料を挟まないときの空洞共振器の共振周波数に対して大きく低下する。その結果、測定したい周波数で測定を行うためには、試料の誘電率が高いほど試料の厚さを薄くする必要がある。加工が可能な、ある程度の厚みを持った試料では所望の周波数で誘電定数を測定することが困難になるという問題があった。 However, in the cut-off cylindrical waveguide method, the resonance frequency of the TE 0m1 (m = 1, 2,...) Mode depends on the dielectric constant and thickness of the dielectric substrate that is the measurement sample, and the cavity resonance occurs when the sample is not sandwiched. Greatly decreases with respect to the resonance frequency of the vessel. As a result, in order to perform measurement at the frequency to be measured, it is necessary to reduce the thickness of the sample as the dielectric constant of the sample increases. There is a problem that it is difficult to measure the dielectric constant at a desired frequency in a sample that can be processed and has a certain thickness.
また、誘電正接の解析をするときに用いる円筒内壁の比導電率は、試料を挟まない状態で測定される。この測定周波数と試料を挟んだときの周波数の差があまりに大きいと比導電率の値に不確かさが生じる。これはミリ波帯では、微小ながらも比導電率に周波数依存性があるためである。その結果、誘電体基板の誘電定数測定の測定精度が低下することも課題である。 Further, the specific conductivity of the inner wall of the cylinder used when analyzing the dielectric loss tangent is measured in a state where no sample is sandwiched. If the difference between the measurement frequency and the frequency when the sample is sandwiched is too large, the specific conductivity value is uncertain. This is because in the millimeter wave band, the specific conductivity is frequency-dependent although it is minute. As a result, the measurement accuracy of dielectric constant measurement of the dielectric substrate is also a problem.
例えば、前記非特許文献１では、直径７．０ｍｍ、長さ２６．１ｍｍを有する遮断円筒の比導電率測定の周波数は５３ＧＨｚであるのに対し、誘電体基板の比誘電率が２．１と低い場合では、厚さ０．２ｍｍの誘電体基板（四フッ化エチレン樹脂試料）の測定周波数は５２ＧＨｚであり、両周波数は近いため、四フッ化エチレン樹脂試料の誘電正接の測定精度は良好である。ところが同じ遮断円筒を用いて比誘電率が高い９．４のサファイア試料を測定すると、四フッ化エチレン樹脂と同じ厚さ０．２ｍｍの場合、測定周波数は４２ＧＨｚとなり、厚さ０．５ｍｍの場合、測定周波数は３２ＧＨｚとなる。このように、サファイア試料の厚みにより測定周波数は大きく低下する。 For example, in Non-Patent Document 1, the relative conductivity measurement frequency of a cutoff cylinder having a diameter of 7.0 mm and a length of 26.1 mm is 53 GHz, whereas the dielectric substrate has a relative dielectric constant of 2.1. In the low case, the measurement frequency of the dielectric substrate (tetrafluoroethylene resin sample) with a thickness of 0.2 mm is 52 GHz, and both frequencies are close, so the measurement accuracy of the dielectric loss tangent of the tetrafluoroethylene resin sample is good. is there. However, when a 9.4 sapphire sample with a high relative dielectric constant is measured using the same blocking cylinder, the measurement frequency is 42 GHz when the thickness is 0.2 mm, which is the same as that of the tetrafluoroethylene resin, and the thickness is 0.5 mm. The measurement frequency is 32 GHz. Thus, the measurement frequency is greatly reduced by the thickness of the sapphire sample.
このように誘電率が高く厚い材料では、測定したい周波数帯で測定できない。測定しても、遮断円筒の比導電率測定の周波数と大きく異なり、電気的物性値の測定誤差が大きくなるという問題があった。
本発明は、誘電率の高い試料や厚い試料を共振器に挿入したときの共振周波数が、試料を挿入しないときの空洞共振器の共振周波数に対して、あまり低下せず、測定したい周波数帯で測定でき、誘電体基板の電気的物性値の測定精度を大きく向上できる電気的物性値測定方法及び測定用冶具を提供することを目的とする。
Such a thick material with a high dielectric constant cannot be measured in the desired frequency band. Even when the measurement was performed, there was a problem that the measurement error of the electrical property value was greatly different from the frequency of the specific conductivity measurement of the cutoff cylinder.
In the present invention, the resonance frequency when a sample having a high dielectric constant or a thick sample is inserted into the resonator does not drop much compared to the resonance frequency of the cavity resonator when the sample is not inserted, and in the frequency band to be measured. An object of the present invention is to provide an electrical property value measurement method and a measurement jig that can be measured and can greatly improve the measurement accuracy of the electrical property value of a dielectric substrate.
本発明者は、上記課題に対して検討を重ねた結果、導体板上に誘電体基板を配置し、該誘電体基板上に誘電体基板が円筒空洞内に露出する面積を狭める露出面積制御導体を載置し、有底筒状導体を、その開口部を下に向けて配置して、円筒空洞共振器を構成した。該円筒空洞共振器のＴＥモード、特にＴＥ011モードの共振周波数と無負荷Ｑを測定し、該共振周波数と無負荷Ｑから、誘電体基板の電気的物性値を求める。つまり、共振器の構造において電界強度が弱い場所に試料を配置し、さらに電界の侵入を制限することにより誘電体基板への電界の集中を緩和し共振周波数の低下を防いでいる。この結果、誘電体基板の電気的物性値を所望の測定周波数で測定するとともに、測定周波数が誘電体基板の誘電率と厚さに大きく依存しないようにすることができ、測定周波数が３０ＧＨｚ以上のミリ波帯における誘電率や誘電損失等の電気的物性値を測定できることを見出した。 As a result of studying the above problems, the present inventor has arranged a dielectric substrate on a conductor plate, and an exposed area control conductor that narrows the area of the dielectric substrate exposed in the cylindrical cavity on the dielectric substrate. Was placed, and the bottomed cylindrical conductor was placed with its opening facing downward to constitute a cylindrical cavity resonator. The resonance frequency and no-load Q of the TE mode, particularly the TE 011 mode, of the cylindrical cavity resonator are measured, and the electrical property value of the dielectric substrate is obtained from the resonance frequency and the no-load Q. In other words, the sample is placed in a place where the electric field strength is weak in the resonator structure, and further, by restricting the penetration of the electric field, the concentration of the electric field on the dielectric substrate is alleviated and the resonance frequency is prevented from being lowered. As a result, the electrical property value of the dielectric substrate can be measured at a desired measurement frequency, and the measurement frequency can be made independent of the dielectric constant and thickness of the dielectric substrate, and the measurement frequency can be 30 GHz or more. We have found that electrical properties such as dielectric constant and dielectric loss in the millimeter wave band can be measured.
本発明の誘電体基板の電気的物性値測定方法は、導体板上に誘電体基板を配置し、前記誘電体基板上に誘電体基板の露出面積を設定するための開口部を有する露出面積制御導体を配置し、前記露出面積制御導体上に、有底筒状導体を、その開口端面が該露出面積制御導体に接するように載置して、誘電体を装荷した空洞共振器を構成し、前記空洞共振器の共振周波数と無負荷Ｑを測定し、測定された共振周波数と無負荷Ｑとから、誘電体基板の電気的物性値を求める方法である。 An electrical property value measuring method for a dielectric substrate according to the present invention includes: a dielectric substrate disposed on a conductor plate; and an exposed area control having an opening for setting an exposed area of the dielectric substrate on the dielectric substrate. A conductor is disposed, and on the exposed area control conductor, a bottomed cylindrical conductor is placed so that an opening end surface thereof is in contact with the exposed area control conductor, thereby forming a cavity resonator loaded with a dielectric, In this method, the resonance frequency and no-load Q of the cavity resonator are measured, and the electrical property value of the dielectric substrate is obtained from the measured resonance frequency and no-load Q.
この電気的物性値測定方法によって、測定周波数を、誘電体基板の誘電率と厚さに大きく依存させずに、３０ＧＨｚ以上のミリ波帯における誘電定数を測定できる理由を説明する。
図４（ａ）は通常の円筒空洞共振器の縦断面図、図４（ｂ）はこの円筒空洞共振器のＴＥ011モードの電界強度の分布を示す図であり、この円筒空洞共振器のＴＥ011モードの電界強度は空洞共振器の高さ方向の中心面で最大になり、両端でゼロになる。
The reason why the dielectric constant in the millimeter wave band of 30 GHz or higher can be measured by this electrical property value measurement method without greatly depending on the measurement frequency on the dielectric constant and thickness of the dielectric substrate will be described.
FIG. 4A is a longitudinal sectional view of a normal cylindrical cavity resonator, and FIG. 4B is a diagram showing a distribution of the electric field strength of the TE 011 mode of the cylindrical cavity resonator. The electric field strength of the 011 mode is maximum at the center plane in the height direction of the cavity resonator, and is zero at both ends.
従来、１０ＧＨｚ前後で誘電体基板の誘電定数を測定する場合、図５（ａ）に示すように、空洞共振器の中央に誘電体基板１を配置する方法がJIS R 1641:2002として規定されている。この場合、この円筒空洞共振器のＴＥ011モードの電界強度の分布は図５（ｂ）のようになる。
しかしながら、この方法を３０ＧＨｚ以上のミリ波帯域に拡張した場合、図６（ａ）に示すように、空洞共振器の寸法が周波数に比例して小型になるのに対して、誘電体基板１の厚さｔは、割れない程度の厚みまでしか薄くできない。この結果、マイクロ波の場合（図５）に比べて共振器の寸法に対する基板の厚みｔが相対的に大きくなるため、誘電体基板１に蓄積されるＴＥ011モードの電界エネルギーが大きくなる。この状態では、試料を挿入していない状態の空洞共振器のＴＥ011モードの共振周波数に対して、誘電体基板１を挿入した空洞共振器の共振周波数、すなわち誘電体基板１の電気的物性値の測定周波数が大きく低下する。つまり、上記図６の円筒空洞共振器の測定周波数は、誘電体基板１の誘電率と厚さに大きく依存するようになる。
Conventionally, when measuring the dielectric constant of a dielectric substrate at around 10 GHz, as shown in FIG. 5A, a method of disposing the dielectric substrate 1 in the center of the cavity resonator is defined as JIS R 1641: 2002. Yes. In this case, the distribution of the electric field intensity in the TE 011 mode of this cylindrical cavity resonator is as shown in FIG.
However, when this method is extended to a millimeter wave band of 30 GHz or more, the size of the cavity resonator is reduced in proportion to the frequency as shown in FIG. The thickness t can only be reduced to a thickness that does not break. As a result, the substrate thickness t with respect to the dimensions of the resonator is relatively larger than in the case of the microwave (FIG. 5), and therefore the electric field energy of the TE 011 mode accumulated in the dielectric substrate 1 is increased. In this state, the resonance frequency of the cavity resonator in which the dielectric substrate 1 is inserted, that is, the electrical property value of the dielectric substrate 1 with respect to the resonance frequency of the TE 011 mode of the cavity resonator in which no sample is inserted. The measurement frequency greatly decreases. That is, the measurement frequency of the cylindrical cavity resonator of FIG. 6 greatly depends on the dielectric constant and thickness of the dielectric substrate 1.
これに対して、本発明の電気的物性値測定方法では、図１に示すように、誘電体基板１を端面の導体板３６に接して配置するため、円筒空洞共振器本来のＴＥモードの電界強度の小さな位置に誘電体基板１を配置することになる。さらに露出面積制御導体３３により電界の侵入を制限させる結果、誘電体基板１の中に蓄積される電界エネルギーが制限され、ＴＥモードの共振周波数の低下、すなわち誘電定数の測定周波数の低下が緩和される。
On the other hand, in the electrical property value measuring method of the present invention, as shown in FIG. 1, the dielectric substrate 1 is disposed in contact with the
本発明において、誘電率および誘電正接等の電気的物性値は、有限要素法等の数値解析を行い、計算できる。軸対称の有限要素法を用いると本発明で使用するような軸対称形状の共振器に対して，寸法、形状、誘電率、誘電正接から共振電磁界分布、共振周波数、無負荷Ｑを精度よく短時間で計算できる。従って、これを応用すれば共振周波数や無負荷Ｑから試料の誘電率や誘電正接を求めることができる。 In the present invention, electrical property values such as dielectric constant and dielectric loss tangent can be calculated by performing numerical analysis such as a finite element method. When the axially symmetric finite element method is used, the resonant electromagnetic field distribution, resonant frequency, and no-load Q are accurately calculated from the size, shape, dielectric constant, and dielectric loss tangent to the axially symmetric resonator used in the present invention. It can be calculated in a short time. Therefore, if this is applied, the dielectric constant and dielectric loss tangent of the sample can be obtained from the resonance frequency and no load Q.
なお、共振器として動作させるためには、前記導体板と露出面積制御導体で挟まれた誘電体基板の領域で、前記空洞共振器の共振周波数と同じ周波数を有する高周波信号が伝搬して逃げていかないようにする必要がある。このため、伝搬方向には遮断モードとなるように、誘電体基板の厚みの範囲に制限がかかる。
さらに、本発明の電気的物性値測定方法は、円筒空洞共振器の温度を変化させ、該円筒空洞共振器の共振周波数と無負荷Ｑの温度依存性を測定し、誘電体基板の電気的物性値の温度依存性を求める。このような電気的物性値測定方法では、より簡単に誘電体基板の電気的物性値の温度依存性を求めることができる。
In order to operate as a resonator, a high-frequency signal having the same frequency as the resonance frequency of the cavity resonator propagates and escapes in a region of the dielectric substrate sandwiched between the conductor plate and the exposed area control conductor. It is necessary to avoid. For this reason, the range of the thickness of the dielectric substrate is limited so as to be in the blocking mode in the propagation direction.
Further, according to the electrical property value measuring method of the present invention, the temperature of the cylindrical cavity resonator is changed, the temperature dependency of the resonance frequency of the cylindrical cavity resonator and the unloaded Q is measured, and the electrical property of the dielectric substrate is measured. Find the temperature dependence of the value. In such an electrical property value measuring method, the temperature dependence of the electrical property value of the dielectric substrate can be obtained more easily.
また、本発明の電気的物性値測定方法を実施する前段階として、導体板上に、誘電体基板のない状態で露出面積を設定するための開口部を有する露出面積制御導体を配置し、前記露出面積制御導体上に、有底筒状導体を、その開口端面が該露出面積制御導体に接するように載置して空洞共振器を構成し、前記空洞共振器の共振周波数と無負荷Ｑを測定し、該共振周波数と無負荷Ｑから、前記露出面積制御導体の比導電率及び寸法を求めることが好ましい。この方法により、誘電体基板の測定周波数と大きく変わらない周波数で、露出面積制御導体の比導電率及び寸法を求めることができるので、誘電体基板の電気的物性値、特に誘電正接の測定精度を向上させることができる。 Further, as a pre-stage for carrying out the electrical property value measuring method of the present invention, an exposed area control conductor having an opening for setting an exposed area without a dielectric substrate is disposed on the conductor plate, A hollow resonator is configured by placing a bottomed cylindrical conductor on the exposed area control conductor so that the opening end face thereof is in contact with the exposed area control conductor, and the resonance frequency and no-load Q of the cavity resonator are set. It is preferable to measure and obtain the specific conductivity and dimension of the exposed area control conductor from the resonance frequency and no load Q. By this method, the specific conductivity and dimensions of the exposed area control conductor can be obtained at a frequency that does not greatly differ from the measurement frequency of the dielectric substrate, so that the measurement of the electrical property value of the dielectric substrate, particularly the dielectric loss tangent Can be improved.
また、本発明の誘電体基板の電気的物性値測定用冶具は、導体板と、誘電体基板の露出面積を設定するための開口部を有する露出面積制御導体と、前記露出面積制御導体上に、その開口端面が該露出面積制御導体に接するように載置される有底筒状導体とを備えることを特徴とする。このような測定冶具を用いることにより、より簡単な構成で容易に誘電体基板の電気的物性値を求めることができる。 The jig for measuring an electrical property value of a dielectric substrate according to the present invention includes a conductor plate, an exposed area control conductor having an opening for setting an exposed area of the dielectric substrate, and the exposed area control conductor. And a bottomed cylindrical conductor mounted so that the opening end face thereof is in contact with the exposed area control conductor. By using such a measuring jig, the electrical property value of the dielectric substrate can be easily obtained with a simpler configuration.
本発明によれば、３０ＧＨｚ以上のミリ波帯においても、空洞共振器の本来のＴＥモードの共振周波数と誘電体基板挿入後のＴＥモードの共振周波数の変化が小さいため、所望の周波数で誘電定数等の電気的物性値を測定できる。
さらに、空洞共振器の実効比導電率の測定周波数と誘電定数の測定周波数が近いため、誘電正接の測定精度を上げることができる。
According to the present invention, even in a millimeter wave band of 30 GHz or higher, the change in the resonance frequency of the original TE mode of the cavity resonator and the resonance frequency of the TE mode after insertion of the dielectric substrate is small. It is possible to measure electrical property values such as
Furthermore, since the measurement frequency of the effective specific conductivity of the cavity resonator and the measurement frequency of the dielectric constant are close, the measurement accuracy of the dielectric loss tangent can be increased.
以下、本発明の実施の形態を、添付図面を参照しながら詳細に説明する。
図２は、円筒空洞共振器に測定試料である誘電体基板１を配置した実施形態を示す縦断面図である。この図２において、円筒空洞共振器は、導体板３６上に誘電体基板１を配置し、該誘電体基板１上に、円筒空洞内に露出する誘電体基板面積を設定するための開口部を有する露出面積制御導体３３を配置し、有底筒状導体３２を、その開口部が前記露出面積制御導体３３に接するように載置した構造となっている。
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 2 is a longitudinal sectional view showing an embodiment in which a dielectric substrate 1 as a measurement sample is arranged in a cylindrical cavity resonator. In this cylindrical cavity resonator, the dielectric substrate 1 is disposed on the
有底筒状導体３２の側壁には貫通孔が２つ形成され、外部から空洞内部に向けて同軸ケーブル３４ａ、３４ｂが挿通しており、その内部側の先端にはループアンテナ３５ａ、３５ｂが形成されている。ループアンテナ３５ａ、３５ｂの空洞共振器への挿入深さはＴＥ011モードの共振周波数における挿入損失が３０ｄＢ程度になるように設定される。
図３は、図２の円筒空洞共振器の導体板３６上の試料誘電体基板１を取り除き、露出面積制御導体３３を導体板３６に直接接触させた円筒空洞共振器を示している。この図３の円筒空洞共振器は、有底筒状導体３２の比導電率や露出面積制御導体３３の開口部の寸法を該円筒空洞共振器の共振周波数と無負荷Ｑを測定することにより、予め決定しておくために用いる。
Two through-holes are formed in the side wall of the bottomed
FIG. 3 shows a cylindrical cavity resonator in which the sample dielectric substrate 1 on the
したがって、この図３の予備測定は一度行えばよく、複数の誘電体基板１を測定する場合でも、各誘電体基板１を測定するたびに毎回行う必要はない。
本発明の電気的物性値測定方法は、特にミリ波帯において最も効果があり、有機系材料および無機系誘電体基板の測定に好適に用いることができ、特に比誘電率が２以上２０以下の誘電体基板の測定に好適である。
Therefore, the preliminary measurement of FIG. 3 only needs to be performed once, and even when a plurality of dielectric substrates 1 are measured, it is not necessary to perform the measurement every time each dielectric substrate 1 is measured.
The electrical property value measuring method of the present invention is most effective particularly in the millimeter wave band, and can be suitably used for measuring organic materials and inorganic dielectric substrates, and particularly has a relative dielectric constant of 2 or more and 20 or less. Suitable for measurement of dielectric substrate.
また、本発明では、誘電体基板の厚みを厚くしても、共振周波数が殆ど変化しないため所望の周波数で測定可能である。したがって、誘電体基板を極端に薄くする必要がなく、測定試料である誘電体基板の破損を防止でき、より高周波での測定が可能となる。
以上で、本発明の実施の形態を説明したが、本発明の実施は、前記の形態に限定されるものではなく、本発明の範囲内で種々の変更を施すことが可能である。
Further, in the present invention, even if the thickness of the dielectric substrate is increased, the resonance frequency hardly changes, so that measurement can be performed at a desired frequency. Therefore, it is not necessary to make the dielectric substrate extremely thin, damage to the dielectric substrate as a measurement sample can be prevented, and measurement at a higher frequency is possible.
Although the embodiments of the present invention have been described above, the embodiments of the present invention are not limited to the above-described embodiments, and various modifications can be made within the scope of the present invention.
空洞共振器に誘電体基板１を挿入する前に、測定に使用する空洞共振器を構成する有底筒状導体３２の比導電率や寸法の評価をする必要がある。そこで、誘電体基板や露出面積制御導体を配置しない空洞共振器の寸法及び比導電率を評価する。
図４に、誘電体基板や露出面積制御導体のない空洞共振器の縦断面図（ａ）、平面断面図（ｂ）及び垂直方向ｚに沿った電界強度Ｅのグラフ（ｃ）を示す。この空洞共振器の空洞直径をＤ、高さをＨで表している。この空洞共振器の評価方法はすでにJISR1641:2002で確立されており、その方法に従った。
Before inserting the dielectric substrate 1 into the cavity resonator, it is necessary to evaluate the specific conductivity and dimensions of the bottomed
FIG. 4 shows a longitudinal sectional view (a), a planar sectional view (b), and a graph (c) of the electric field strength E along the vertical direction z of a cavity resonator without a dielectric substrate or an exposed area control conductor. The cavity diameter of this cavity resonator is represented by D and the height is represented by H. The evaluation method of this cavity resonator has already been established in JISR1641: 2002, and the method was followed.
測定に用いた空洞共振器は２種類、１つの空洞共振器は、空洞直径Ｄが11.864mm、空洞の高さＨが6.565mm、空洞の比導電率が85.0(%)であり、他の空洞共振器は、空洞直径Ｄは35.001mm、空洞の高さＨは25.190mm、空洞の比導電率は73.5(%)であった（表１参照）。測定した周波数は４０ＧＨｚと１０ＧＨｚである。空洞共振器のTE011モードの共振周波数と寸法の関係は、(f/c)2=(r′01/2pD)2+(1/2H)2から求められる。ただし、r′01は、0次のベッセル関数を微分したものの1番目の解である。 Two types of cavity resonators were used for measurement. One cavity resonator had a cavity diameter D of 11.864 mm, a cavity height H of 6.565 mm, and a cavity specific conductivity of 85.0 (%). The resonator had a cavity diameter D of 35.001 mm, a cavity height H of 25.190 mm, and a cavity specific conductivity of 73.5 (%) (see Table 1). The measured frequencies are 40 GHz and 10 GHz. The relationship between the resonance frequency of the TE 011 mode and the size of the cavity resonator can be obtained from (f / c) 2 = (r ′ 01 / 2pD) 2 + (1 / 2H) 2 . However, r ′ 01 is the first solution obtained by differentiating the 0th order Bessel function.
その後、図３に示す露出面積制御導体３３を配置した空洞共振器の共振周波数と無負荷Ｑを測定した。測定に用いた周波数は、４０ＧＨｚである。この共振周波数と無負荷Ｑに基づいて露出面積制御導体３３の寸法及び比導電率を計算により求めた。この結果を表１にまとめる。
Thereafter, the resonance frequency and no-load Q of the cavity resonator in which the exposed
表１によれば、周波数４０ＧＨｚにおいて、露出面積制御導体３３の開口部の高さｇは１．０１６ｍｍ，開口部の直径Ｄsは８．００６ｍｍ、開口部の比導電率Ｄ#σrは２２．７％であった。比導電率は、万国標準軟銅の導電率を１００％としたときの値（％）である。
次に、測定された空洞共振器に誘電体基板を装荷して誘電体基板の比誘電率、誘電正接の測定を行った。本測定に用いた誘電体基板（試料）は、厚さが１．００６ｍｍのＣ面サファイア基板である。
According to Table 1, at a frequency of 40 GHz, the height g of the opening of the exposed
Next, a dielectric substrate was loaded on the measured cavity resonator, and the dielectric constant and dielectric loss tangent of the dielectric substrate were measured. The dielectric substrate (sample) used for this measurement is a C-plane sapphire substrate having a thickness of 1.006 mm.
周波数４０ＧＨｚでネットワークアナライザを用いて共振周波数および無負荷Ｑの測定を行い、サファイア基板の比誘電率、誘電正接を計算した結果を表２の上段に示す。また、同じサファイア基板の測定を１０ＧＨｚにても行った。この結果も表２の下段に示す。 The resonance frequency and unloaded Q are measured using a network analyzer at a frequency of 40 GHz, and the results of calculating the relative dielectric constant and dielectric loss tangent of the sapphire substrate are shown in the upper part of Table 2. The same sapphire substrate was measured at 10 GHz. The results are also shown in the lower part of Table 2.
空洞共振器にサファイア基板を挿入したときの共振周波数を予め計算しておき、横軸比誘電率、縦軸共振周波数のチャートを作成することで測定すべき共振ピークの判別を行うことができる。
表１、表２より、本発明の電気的物性値測定方法においては、空洞共振器本来のＴＥ011モードの共振周波数（40GHz付近）と、サファイア基板を空洞共振器内に配置した後の共振周波数（32Hz付近）との変化が少ないことがわかる。すなわち、1mmの厚みを持つ厚いサファイア試料を、共振周波数を低下させることなく、表２の上段にあるように32GHzで測定可能にした。
The resonance frequency when the sapphire substrate is inserted into the cavity resonator is calculated in advance, and the resonance peak to be measured can be determined by creating a chart of the relative dielectric constant on the horizontal axis and the chart on the vertical axis resonance frequency.
From Tables 1 and 2, in the electrical property value measuring method of the present invention, the resonance frequency of the TE 011 mode inherent to the cavity resonator (around 40 GHz) and the resonance frequency after the sapphire substrate is placed in the cavity resonator. It can be seen that there is little change from (around 32Hz). That is, a thick sapphire sample having a thickness of 1 mm can be measured at 32 GHz as shown in the upper part of Table 2 without reducing the resonance frequency.
サファイアの比誘電率は９．４であることが知られており、本測定結果はこれらと良く一致する。また、サファイア基板の、周波数（ＧＨｚ）／誘電正接の値が１×１０6であることが報告されているが、これによると今回の３５ＧＨｚ付近の表２の誘電正接は４．８５×１０-5となり、これに近い値になっていることが判る。
また、本発明の電気的物性値測定方法によって得た誘電体基板の誘電率と誘電正接より、誘電体基板の抵抗率を計算することができるので、本発明は誘電体基板の抵抗率測定法としても機能する。
It is known that the relative dielectric constant of sapphire is 9.4, and this measurement result agrees well with these. Further, it has been reported that the frequency (GHz) / dielectric loss tangent value of the sapphire substrate is 1 × 10 6 , and according to this, the dielectric loss tangent in Table 2 near 35 GHz is 4.85 × 10 −. It can be seen that the value is close to 5 .
Further, since the resistivity of the dielectric substrate can be calculated from the dielectric constant and dielectric loss tangent of the dielectric substrate obtained by the electrical property value measuring method of the present invention, the present invention is a method for measuring the resistivity of the dielectric substrate. Also works.
１ 誘電体基板（試料）
２ａ、２ｂ 円筒空洞
３２，３２ａ、３２ｂ 有底筒状導体
３３ 露出面積制御導体
３４ａ，３４ｂ 同軸ケーブル
３５ａ，３５ｂ ループアンテナ
３６ 導体板
1 Dielectric substrate (sample)
2a,
Claims (10)
前記誘電体基板上に誘電体基板の露出面積を設定するための開口部を有する露出面積制御導体を配置し、
前記露出面積制御導体上に、有底筒状導体を、その開口端面が該露出面積制御導体に接するように載置して、誘電体を装荷した空洞共振器を構成し、
前記空洞共振器の共振周波数と無負荷Ｑを測定し、測定された共振周波数と無負荷Ｑとから、誘電体基板の電気的物性値を求めることを特徴とする誘電体基板の電気的物性値測定方法。 Place a dielectric substrate on the conductor plate,
An exposed area control conductor having an opening for setting the exposed area of the dielectric substrate is disposed on the dielectric substrate,
On the exposed area control conductor, a bottomed cylindrical conductor is placed so that an opening end face thereof is in contact with the exposed area control conductor, and a cavity resonator loaded with a dielectric is configured,
An electrical property value of the dielectric substrate, wherein a resonance frequency and no-load Q of the cavity resonator are measured, and an electrical property value of the dielectric substrate is obtained from the measured resonance frequency and no-load Q Measuring method.
前記露出面積制御導体上に、有底筒状導体を、その開口端面が該露出面積制御導体に接するように載置して空洞共振器を構成し、
前記空洞共振器の共振周波数と無負荷Ｑを測定し、該共振周波数と無負荷Ｑから、前記露出面積制御導体の比導電率及び寸法を求め、
前記導体板と前記露出面積制御導体の間に誘電体基板を挟み、
この誘電体基板が装荷された空洞共振器の共振周波数と無負荷Ｑを測定し、測定された共振周波数と無負荷Ｑ及び前記寸法と比導電率の値から、誘電体基板の電気的物性値を求めることを特徴とする誘電体基板の電気的物性値測定方法。 On the conductor plate, an exposed area control conductor having an opening for setting the exposed area without a dielectric substrate is disposed,
On the exposed area control conductor, a bottomed cylindrical conductor is placed so that the opening end surface thereof is in contact with the exposed area control conductor to form a cavity resonator,
Measure the resonance frequency and no-load Q of the cavity resonator, determine the specific conductivity and dimensions of the exposed area control conductor from the resonance frequency and no-load Q,
Sandwiching a dielectric substrate between the conductor plate and the exposed area control conductor;
The resonance frequency and no-load Q of the cavity resonator loaded with the dielectric substrate are measured, and the electrical property value of the dielectric substrate is determined from the measured resonance frequency, no-load Q, the dimension, and the specific conductivity. A method for measuring an electrical property value of a dielectric substrate.
測定試料となる誘電基板の露出面積を設定するための開口部を有する露出面積制御導体と、
前記露出面積制御導体上に、その開口端面が該露出面積制御導体に接するように載置される有底筒状導体とを備えることを特徴とする誘電体基板の電気的物性値測定用治具。 A conductor plate;
An exposed area control conductor having an opening for setting an exposed area of a dielectric substrate to be a measurement sample;
A jig for measuring an electrical property value of a dielectric substrate, comprising: a bottomed cylindrical conductor placed on the exposed area control conductor so that an opening end surface thereof is in contact with the exposed area control conductor .
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