JP4213672B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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Description
先ず、本発明の第1の実施形態について説明する。但し、ここでは、便宜上、半導体装置の構造については、その製造方法と共に説明する。図1A及び図1B乃至図4A及び図4Bは、本発明の第1の実施形態に係る半導体装置の製造方法を工程順に示す図であって、図1A乃至図4Aは上面図であり、図1B乃至図4Bは、図1A乃至図4A中のI−I線に沿った断面図である。
次に、本発明の第2の実施形態について説明する。但し、ここでは、便宜上、半導体装置の構造については、その製造方法と共に説明する。図5A及び図5B乃至図7A及び図7Bは、本発明の第2の実施形態に係る半導体装置の製造方法を工程順に示す図であって、図5A乃至図7Aは上面図であり、図5B乃至図7Bは、図5A乃至図7A中のII−II線に沿った断面図である。なお、図5A及び図5B乃至図7A及び図7Bには、入出力領域12のみを示す。
次に、本発明の第3の実施形態について説明する。但し、ここでは、便宜上、半導体装置の構造については、その製造方法と共に説明する。図8は、本発明の第3の実施形態に係る半導体装置の製造方法を示す断面図である。なお、図8には、入出力領域12のみを示す。
Claims (7)
- 半導体基板上に形成された半導体素子と、
前記半導体素子に接続されたパッドと、
前記パッドの全面が露出されるようにして、前記半導体素子が形成された領域を覆う第1のパッシベーション膜と、
前記第1のパッシベーション膜上に形成され、前記パッドの一部が露出されるようにして、前記半導体素子が形成された領域及び前記パッドの縁部を覆う第2のパッシベーション膜と、
を備え、
前記パッドのエッジと前記第1のパッシベーション膜とは離れていることを特徴とする半導体装置。 - 前記パッドにプローブの痕跡が形成されており、
前記第2のパッシベーション膜は、前記痕跡を覆っていることを特徴とする請求項1に記載の半導体装置。 - 前記パッドは一方向に並んで複数設けられており、
前記パッドの前記第2のパッシベーション膜から露出される部分と前記痕跡とは、前記パッドが並ぶ方向に対して平行な方向に並んでいることを特徴とする請求項2に記載の半導体装置。 - 前記第1のパッシベーション膜はSiN膜であることを特徴とする請求項1に記載の半導体装置。
- 前記第2のパッシベーション膜はSiN膜であることを特徴とする請求項1に記載の半導体装置。
- 半導体基板上に半導体素子を形成する工程と、
前記半導体素子に接続されるパッドを形成する工程と、
前記半導体素子が形成された領域及び前記パッドを覆う第1の膜を形成する工程と、
前記第1の膜に前記パッドの全面を露出する開口部を形成して、前記パッドのエッジから離れている第1のパッシベーション膜を形成する工程と、
前記第1のパッシベーション膜上に、前記パッドの一部が露出されるようにして、前記半導体素子が形成された領域及び前記パッドの縁部を覆う第2のパッシベーション膜を形成する工程と、
を有することを特徴とする半導体装置の製造方法。 - 前記第1のパッシベーション膜としてSiN膜を形成することを特徴とする請求項6に記載の半導体装置の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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PCT/JP2003/004749 WO2004093184A1 (ja) | 2003-04-15 | 2003-04-15 | 半導体装置及びその製造方法 |
Publications (2)
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JPWO2004093184A1 JPWO2004093184A1 (ja) | 2006-07-06 |
JP4213672B2 true JP4213672B2 (ja) | 2009-01-21 |
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JP2004570871A Expired - Fee Related JP4213672B2 (ja) | 2003-04-15 | 2003-04-15 | 半導体装置及びその製造方法 |
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Country | Link |
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US (3) | US7741713B2 (ja) |
JP (1) | JP4213672B2 (ja) |
CN (1) | CN100426481C (ja) |
WO (1) | WO2004093184A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006210438A (ja) * | 2005-01-25 | 2006-08-10 | Nec Electronics Corp | 半導体装置およびその製造方法 |
WO2011021506A1 (ja) * | 2009-08-18 | 2011-02-24 | アルプス電気株式会社 | ボンディングパッドを有するシリコン構造体 |
US8426984B2 (en) * | 2011-09-13 | 2013-04-23 | Chipbond Technology Corporation | Substrate structure with compliant bump and manufacturing method thereof |
JP6211855B2 (ja) * | 2013-09-03 | 2017-10-11 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US9831193B1 (en) * | 2016-05-31 | 2017-11-28 | Texas Instruments Incorporated | Methods and apparatus for scribe street probe pads with reduced die chipping during wafer dicing |
US10249583B1 (en) * | 2017-09-19 | 2019-04-02 | Infineon Technologies Ag | Semiconductor die bond pad with insulating separator |
CN110111682B (zh) * | 2019-04-10 | 2021-06-01 | Tcl华星光电技术有限公司 | 覆晶薄膜及显示装置 |
US10879138B1 (en) * | 2019-06-14 | 2020-12-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor packaging structure including interconnection to probe pad with probe mark and method of manufacturing the same |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2882065B2 (ja) * | 1991-01-25 | 1999-04-12 | 日本電気株式会社 | 半導体装置の製造方法 |
US5406122A (en) * | 1993-10-27 | 1995-04-11 | Hughes Aircraft Company | Microelectronic circuit structure including conductor bridges encapsulated in inorganic dielectric passivation layer |
JPH07201866A (ja) * | 1993-12-31 | 1995-08-04 | Casio Comput Co Ltd | バンプを備えた半導体装置およびその製造方法 |
JP3526376B2 (ja) * | 1996-08-21 | 2004-05-10 | 株式会社東芝 | 半導体装置及びその製造方法 |
US6083768A (en) * | 1996-09-06 | 2000-07-04 | Micron Technology, Inc. | Gravitationally-assisted control of spread of viscous material applied to semiconductor assembly components |
TW571373B (en) | 1996-12-04 | 2004-01-11 | Seiko Epson Corp | Semiconductor device, circuit substrate, and electronic machine |
KR100295240B1 (ko) * | 1997-04-24 | 2001-11-30 | 마찌다 가쯔히꼬 | 반도체장치 |
JP3022819B2 (ja) * | 1997-08-27 | 2000-03-21 | 日本電気アイシーマイコンシステム株式会社 | 半導体集積回路装置 |
US6133582A (en) * | 1998-05-14 | 2000-10-17 | Lightspeed Semiconductor Corporation | Methods and apparatuses for binning partially completed integrated circuits based upon test results |
US6130141A (en) * | 1998-10-14 | 2000-10-10 | Lucent Technologies Inc. | Flip chip metallization |
US6261944B1 (en) * | 1998-11-24 | 2001-07-17 | Vantis Corporation | Method for forming a semiconductor device having high reliability passivation overlying a multi-level interconnect |
US6069066A (en) * | 1998-12-09 | 2000-05-30 | United Microelectronics Corp. | Method of forming bonding pad |
US6649533B1 (en) * | 1999-05-05 | 2003-11-18 | Advanced Micro Devices, Inc. | Method and apparatus for forming an under bump metallurgy layer |
US6297561B1 (en) * | 1999-05-26 | 2001-10-02 | United Microelectronics Corp. | Semiconductor chip |
US6251694B1 (en) * | 1999-05-26 | 2001-06-26 | United Microelectronics Corp. | Method of testing and packaging a semiconductor chip |
US6340608B1 (en) * | 2000-07-07 | 2002-01-22 | Chartered Semiconductor Manufacturing Ltd. | Method of fabricating copper metal bumps for flip-chip or chip-on-board IC bonding on terminating copper pads |
US6630736B1 (en) * | 2000-07-27 | 2003-10-07 | National Semiconductor Corporation | Light barrier for light sensitive semiconductor devices |
US6258705B1 (en) * | 2000-08-21 | 2001-07-10 | Siliconeware Precision Industries Co., Ltd. | Method of forming circuit probing contact points on fine pitch peripheral bond pads on flip chip |
KR100385225B1 (ko) * | 2001-03-23 | 2003-05-27 | 삼성전자주식회사 | 탐침 패드 및 범프 패드를 갖는 플립 칩형 반도체소자 및 그 제조방법 |
JP2002313835A (ja) * | 2001-04-09 | 2002-10-25 | Oki Electric Ind Co Ltd | ボンディングパッド、半導体装置及びワイヤボンディング方法 |
JP2002329722A (ja) * | 2001-04-27 | 2002-11-15 | Nec Corp | 半導体装置及びその製造方法 |
US7071024B2 (en) * | 2001-05-21 | 2006-07-04 | Intel Corporation | Method for packaging a microelectronic device using on-die bond pad expansion |
US6667195B2 (en) * | 2001-08-06 | 2003-12-23 | United Microelectronics Corp. | Laser repair operation |
JP2003068736A (ja) | 2001-08-24 | 2003-03-07 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
US6844631B2 (en) * | 2002-03-13 | 2005-01-18 | Freescale Semiconductor, Inc. | Semiconductor device having a bond pad and method therefor |
US6617696B1 (en) * | 2002-03-14 | 2003-09-09 | Fairchild Semiconductor Corporation | Supporting control gate connection on a package using additional bumps |
US6509582B1 (en) * | 2002-03-27 | 2003-01-21 | Fairchild Semiconductor Corporation | Semiconductor pad construction enabling pre-bump probing by planarizing the post-sort pad surface |
EP1351298B1 (de) * | 2002-03-28 | 2007-12-26 | Infineon Technologies AG | Method for producing a semiconductor wafer |
DE60239493D1 (de) * | 2002-06-21 | 2011-04-28 | Fujitsu Semiconductor Ltd | Halbleiterbauelement und verfahren zu seiner herstellung |
US6717270B1 (en) * | 2003-04-09 | 2004-04-06 | Motorola, Inc. | Integrated circuit die I/O cells |
JP4141403B2 (ja) * | 2004-04-01 | 2008-08-27 | 富士通株式会社 | 半導体装置及び半導体装置の製造方法 |
US7105379B2 (en) * | 2004-04-28 | 2006-09-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Implementation of protection layer for bond pad protection |
-
2003
- 2003-04-15 JP JP2004570871A patent/JP4213672B2/ja not_active Expired - Fee Related
- 2003-04-15 CN CNB038249561A patent/CN100426481C/zh not_active Expired - Fee Related
- 2003-04-15 WO PCT/JP2003/004749 patent/WO2004093184A1/ja active Application Filing
-
2005
- 2005-03-30 US US11/093,040 patent/US7741713B2/en not_active Expired - Fee Related
-
2010
- 2010-05-07 US US12/775,691 patent/US8735275B2/en not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
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US20100279501A1 (en) | 2010-11-04 |
US20140042613A1 (en) | 2014-02-13 |
US9331035B2 (en) | 2016-05-03 |
JPWO2004093184A1 (ja) | 2006-07-06 |
CN100426481C (zh) | 2008-10-15 |
CN1695239A (zh) | 2005-11-09 |
US20050179114A1 (en) | 2005-08-18 |
US8735275B2 (en) | 2014-05-27 |
WO2004093184A1 (ja) | 2004-10-28 |
US7741713B2 (en) | 2010-06-22 |
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