JP4191574B2 - 逆平行結合された導線/センサ重複領域を有する磁気抵抗センサ - Google Patents
逆平行結合された導線/センサ重複領域を有する磁気抵抗センサ Download PDFInfo
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- JP4191574B2 JP4191574B2 JP2003377919A JP2003377919A JP4191574B2 JP 4191574 B2 JP4191574 B2 JP 4191574B2 JP 2003377919 A JP2003377919 A JP 2003377919A JP 2003377919 A JP2003377919 A JP 2003377919A JP 4191574 B2 JP4191574 B2 JP 4191574B2
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
- G11B5/3169—Working or finishing the interfacing surface of heads, e.g. lapping of heads
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3967—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/313—Disposition of layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
- G11B5/3932—Magnetic biasing films
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
- Y10T29/49032—Fabricating head structure or component thereof
- Y10T29/49036—Fabricating head structure or component thereof including measuring or testing
- Y10T29/49043—Depositing magnetic layer or coating
- Y10T29/49044—Plural magnetic deposition layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
- Y10T29/49032—Fabricating head structure or component thereof
- Y10T29/49036—Fabricating head structure or component thereof including measuring or testing
- Y10T29/49043—Depositing magnetic layer or coating
- Y10T29/49046—Depositing magnetic layer or coating with etching or machining of magnetic material
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- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
- Thin Magnetic Films (AREA)
Description
Claims (12)
- 第1及び第2のパッシブ領域ならびに上記第1及び第2パッシブ領域間に横断的に配置された中央トラックの幅領域を有するスピンバルブ(SV)センサであって、
ピン固定層と、
強磁性自由層と、
該ピン固定層と該自由層の間に挟まれたスペーサ層と、
上記第1及び第2パッシブ領域内にある強磁性バイアス層と、
上記中央トラックの領域内にあり、第1及び第2パッシブ領域内の強磁性バイアス層の間に横断的に配置されている非磁性酸化物層と、
上記自由層と上記強磁性バイアス層の間に挟まれた、第1及び第2のパッシブ領域内で該バイアス層と該自由層の間の強力な逆平行結合を生ずるための逆平行結合層と、
上記強磁性バイアス層上に形成された第1のキャップ層と、
上記非磁性酸化物層上に形成された第2のキャップ層と、
を含むことを特徴とするスピンバルブセンサ。 - 請求項1に記載のスピンバルブセンサにおいて、スピンバルブセンサに接続されている第1及び第2の導線層が、それぞれ第1及び第2のパッシブ領域内のバイアス層に重なっていることを特徴とするスピンバルブセンサ。
- 請求項2に記載のスピンバルブセンサにおいて、第1及び第2パッシブ領域の間のトラック幅領域が、第1及び第2導線層の間隔によって決定されることを特徴とするスピンバルブセンサ。
- 請求項1に記載のスピンバルブセンサにおいて、自由層が:
第2の副自由層(free sublayer);及び
該第2副自由層とスペーサ層の間に挟まれた第1の副自由層を構成要素として含むことを特徴とするスピンバルブセンサ。 - 請求項4に記載のスピンバルブセンサにおいて、第1の副自由層がCo―Fe合金で、第2の副自由層がNi―Fe合金で作られていることを特徴とするスピンバルブセンサ。
- 請求項1に記載のスピンバルブセンサにおいて、バイアス層が:
第2の副バイアス層(bias sublayer);及び
該第2副バイアス層と逆平行結合層の間に挟まれた第1副バイアス層を構成要素として含むことを特徴とするスピンバルブセンサ。 - 請求項6に記載のスピンバルブセンサにおいて、第1の副バイアス層がCo―Fe合金で、第2の副バイアス層がNi―Fe合金で作られていることを特徴とするスピンバルブセンサ。
- 請求項1に記載のスピンバルブセンサにおいて、上記第1のキャップ層は、TaとRuとからなることを特徴とするスピンバルブセンサ。
- 請求項1に記載のスピンバルブセンサにおいて、上記第2のキャップ層は、RhとRuとからなる群から選ばれた材料によって形成されることを特徴とするスピンバルブセンサ。
- 第1及び第2のパッシブ領域、ならびに上記第1及び第2パッシブ領域間に横断的に配置された中央トラック幅領域を有するスピンバルブセンサを製作する方法において、
ピン固定層、スペーサ層、及び自由層を順次被着堆積する工程と、
自由層と逆平行結合された強磁性バイアス層を被着する工程(逆平行結合は、自由層と該バイアス層の間に挟まれた1個の逆平行結合層による)と、
バイアス層の上に第1のキャップ層を被着する工程と、
該第1のキャップ層の上に第1及び第2の導線層を被着する工程(上記第1及び第2導線層は、それぞれ第1及び第2パッシブ領域に重なっており、この場合、第1及び第2パッシブ領域間のトラック幅領域は、第1及び第2の導線層の間隔によって決定される)と、
第1及び第2導線層の間にあるトラック幅領域内の第1のキャップ層を除去する工程と、
トラック幅領域内のバイアス層の強磁性材料を非磁性酸化物層に転化せしめる工程と、
上記非磁性酸化物層上に第2のキャップ層を形成する工程と、
を含むスピンバルブセンサの製造方法。 - 請求項10に記載の方法において、トラック幅領域内の第1のキャップ層を除去する工程に、スパッタエッチング及び反応性イオンエッチングプロセスを使用することを特徴とする方法。
- 請求項10に記載の方法において、トラック幅領域内のバイアス層の強磁性材料を非磁性の酸化物層に転化させる工程に、酸素含有ガスを用いたスパッタエッチングを使用することを特徴とする方法。
以上
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/290,825 US6876527B2 (en) | 2002-11-08 | 2002-11-08 | Magnetoresistive sensor with antiparallel coupled lead/sensor overlap region |
Publications (3)
Publication Number | Publication Date |
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JP2004164836A JP2004164836A (ja) | 2004-06-10 |
JP2004164836A5 JP2004164836A5 (ja) | 2006-12-14 |
JP4191574B2 true JP4191574B2 (ja) | 2008-12-03 |
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Family Applications (1)
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JP2003377919A Expired - Fee Related JP4191574B2 (ja) | 2002-11-08 | 2003-11-07 | 逆平行結合された導線/センサ重複領域を有する磁気抵抗センサ |
Country Status (3)
Country | Link |
---|---|
US (2) | US6876527B2 (ja) |
JP (1) | JP4191574B2 (ja) |
CN (1) | CN1288628C (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6842969B2 (en) * | 2002-04-05 | 2005-01-18 | Headway Technologies, Inc. | Process for manufacturing a magnetic read head |
JP2004289100A (ja) * | 2003-01-31 | 2004-10-14 | Japan Science & Technology Agency | Cpp型巨大磁気抵抗素子及びそれを用いた磁気部品並びに磁気装置 |
US7085111B2 (en) * | 2003-03-13 | 2006-08-01 | Hitachi Global Storage Technologies Netherlands B.V. | Low resistance antiparallel tab magnetoresistive sensor |
US6954344B2 (en) * | 2003-05-16 | 2005-10-11 | Hitachi Global Storage Technologies Netherlands B.V. | Anti-parallel tab sensor fabrication using chemical-mechanical polishing process |
US7085110B2 (en) * | 2003-07-07 | 2006-08-01 | Hitachi Global Storage Technologies Netherlands, B.V. | Thermally stable oxidized bias layer structure for magnetoresistive magnetic head for a hard disk drive |
US7230802B2 (en) * | 2003-11-12 | 2007-06-12 | Hitachi Global Storage Technologies Netherlands B.V. | Method and apparatus for providing magnetostriction control in a freelayer of a magnetic memory device |
US7270854B2 (en) * | 2003-11-19 | 2007-09-18 | Hitachi Global Storage Technologies Netherlands B.V. | Method for forming a head having improved spin valve properties |
US7394624B2 (en) * | 2005-02-23 | 2008-07-01 | Hitachi Global Storage Technologies Netherlands B.V. | Read sensor with a uniform longitudinal bias stack |
US7768749B2 (en) * | 2006-02-10 | 2010-08-03 | Hitachi Global Storage Technologies Netherlands B.V. | Tunnel MR head with long stripe height stabilized through side-extended bias layer |
US7419891B1 (en) | 2006-02-13 | 2008-09-02 | Western Digital (Fremont), Llc | Method and system for providing a smaller critical dimension magnetic element utilizing a single layer mask |
JP4296180B2 (ja) * | 2006-02-17 | 2009-07-15 | 株式会社東芝 | 磁気抵抗効果素子,磁気ヘッド,磁気再生装置,および磁気抵抗素子の製造方法 |
US7768748B2 (en) * | 2006-12-14 | 2010-08-03 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetoresistive sensor with overlaid combined leads and shields |
JP2008243920A (ja) * | 2007-03-26 | 2008-10-09 | Toshiba Corp | 磁気抵抗効果再生素子、磁気ヘッド、および磁気再生装置 |
US8336194B2 (en) * | 2009-11-03 | 2012-12-25 | Western Digital (Fremont), Llc | Method of fabricating a tunneling magnetoresistive (TMR) reader |
AU2019309512A1 (en) * | 2018-07-27 | 2021-02-04 | Zepto Life Technology, LLC | System and method for processing analyte signals in GMR-based detection of biomarkers |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3455037B2 (ja) * | 1996-11-22 | 2003-10-06 | アルプス電気株式会社 | スピンバルブ型薄膜素子、その製造方法、及びこのスピンバルブ型薄膜素子を用いた薄膜磁気ヘッド |
SG75829A1 (en) * | 1997-03-14 | 2000-10-24 | Toshiba Kk | Magneto-resistance effect element and magnetic head |
JP2001067625A (ja) | 1999-08-30 | 2001-03-16 | Alps Electric Co Ltd | 磁気抵抗効果型素子及びその製造方法 |
JP2001155313A (ja) | 1999-11-25 | 2001-06-08 | Matsushita Electric Ind Co Ltd | 薄膜磁気ヘッド及びその製造方法 |
JP2001176028A (ja) | 1999-12-14 | 2001-06-29 | Matsushita Electric Ind Co Ltd | 薄膜磁気ヘッド及びその製造方法 |
US6856494B2 (en) | 2000-03-24 | 2005-02-15 | Alps Electric Co., Ltd. | Spin-valve type thin film magnetic element having bias layers and ferromagnetic layers |
US6570745B1 (en) * | 2000-11-20 | 2003-05-27 | International Business Machines Corporation | Lead overlaid type of sensor with sensor passive regions pinned |
US6721146B2 (en) * | 2001-03-14 | 2004-04-13 | International Business Machines Corporation | Magnetic recording GMR read back sensor and method of manufacturing |
US7010848B2 (en) * | 2002-02-15 | 2006-03-14 | Headway Technologies, Inc. | Synthetic pattern exchange configuration for side reading reduction |
US7035060B2 (en) * | 2002-03-06 | 2006-04-25 | Headway Technologies, Inc. | Easily manufactured exchange bias stabilization scheme |
US6857180B2 (en) * | 2002-03-22 | 2005-02-22 | Headway Technologies, Inc. | Method for fabricating a patterned synthetic longitudinal exchange biased GMR sensor |
US6989971B2 (en) * | 2002-04-05 | 2006-01-24 | Hitachi Global Storage Technologies Netherlands, B.V. | Giant magnetoresistance (GMR) read head with reactive-ion-etch defined read width and fabrication process |
US6778364B2 (en) * | 2002-08-28 | 2004-08-17 | International Business Machines Corporation | Current-in-plane magnetoresistive sensor with longitudinal biasing layer having a nonmagnetic oxide central region and method for fabrication of the sensor |
-
2002
- 2002-11-08 US US10/290,825 patent/US6876527B2/en not_active Expired - Fee Related
-
2003
- 2003-11-07 CN CNB2003101148900A patent/CN1288628C/zh not_active Expired - Fee Related
- 2003-11-07 JP JP2003377919A patent/JP4191574B2/ja not_active Expired - Fee Related
-
2005
- 2005-02-24 US US11/067,198 patent/US7360297B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1288628C (zh) | 2006-12-06 |
US20050141145A1 (en) | 2005-06-30 |
US6876527B2 (en) | 2005-04-05 |
CN1538386A (zh) | 2004-10-20 |
JP2004164836A (ja) | 2004-06-10 |
US20040090718A1 (en) | 2004-05-13 |
US7360297B2 (en) | 2008-04-22 |
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